Movatterモバイル変換

Special Section on Electronic Displays

Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED

Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO

Author information

Doo-Hee CHO
ETRI
Sang-Hee Ko PARK
ETRI
Shinhyuk YANG
ETRI
Chunwon BYUN
ETRI
Min Ki RYU
ETRI
Jeong-Ik LEE
ETRI
Chi-Sun HWANG
ETRI
Sung Min YOON
ETRI
Hye Yong CHU
ETRI
Kyoung Ik CHO
ETRI

Corresponding author

Keywords:thin film transistor,oxide,AMOLED,transparent

JOURNALRESTRICTED ACCESS

2009 Volume E92.CIssue 11Pages 1340-1346

DOIhttps://doi.org/10.1587/transele.E92.C.1340

Details

Published: November 01, 2009Received: March 02, 2009Available on J-STAGE: November 01, 2009Accepted: -Advance online publication: -Revised: -

Download PDF(678K)

Download citationRIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text

How to download citation

Article overview

Abstract

We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO₂ content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO₂) exhibited a mobility of 10.3cm²/Vs, a turn-on voltage of 0.4V, a sub-threshold swing of 0.6V/dec, and an on/off ratio of 10⁹. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.

References (13)

Movatterモバイル変換

Corresponding author

Register with J-STAGE for free!