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A 2.4GHz GaAs HBT stacked power amplifier with inductance compensation

Tao Chen, Xiaohong Sun, Jianhui Wu, Xu Niu, Huai Gao

Author information

Tao Chen
National ASIC System Engineering Research Center, Southeast University
Xiaohong Sun
National ASIC System Engineering Research Center, Southeast University
Jianhui Wu
National ASIC System Engineering Research Center, Southeast University
Xu Niu
RF Power Device and Circuit Engineering Research Center
Huai Gao
RF Power Device and Circuit Engineering Research Center

Corresponding author

Keywords:heterojunction bipolar transistors (HBTs),power amplifier,stacked structure

JOURNALFREE ACCESS

2013 Volume 10Issue 16Pages 20130470

DOIhttps://doi.org/10.1587/elex.10.20130470

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Published: August 25, 2013Received: June 17, 2013Released on J-STAGE: August 25, 2013Accepted: July 22, 2013Advance online publication: August 01, 2013Revised: -

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Article overview

Abstract

A stacked power amplifier (PA) using 2-µm GaAs HBT process is presented for 2.4GHz application. The stacked configuration can increase the output power by raising the supply voltage of the circuit. Additionally, a novel inter-stage matching technique with series RC is proposed to suppress the efficiency degradation caused by the parasitic capacitance. The measurement results show the compensation technique improves PAE by more than 6%, while the error vector magnitude (EVM) is enhanced. And the fabricated PA shows a gain of 23.7dB and a saturated output power of 32dBm with PAE of 50%, while the EVMs are lower than 3% up to 26dBm of OFDM/64QAM output power.

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