| Capacity: | 1 TB(1024 GB) |
|---|---|
| Variants: | 256 GB512 GB1 TB |
| Overprovisioning: | 70.3 GB/ 7.4 % |
| Production: | Active |
| Released: | 2019 |
| Part Number: | SDBPNTY-1TOO |
| Market: | Consumer |
| Form Factor: | M.2 2280(Single-Sided) |
|---|---|
| Interface: | PCIe 3.0 x4 |
| Protocol: | NVMe 1.3 |
| Power Draw: | 0.10 W (Idle) 2.2 W (Avg) 5.4 W (Max) |
| Manufacturer: | WD |
|---|---|
| Name: | 20-82-00705-A2 Triton MP28 Find More Drives |
| Architecture: | ARM 32-bit |
| Core Count: | Triple-Core |
| Foundry: | TSMC |
| Process: | 28 nm |
| Flash Channels: | 8@ 800 MT/s |
| Chip Enables: | 4 |
| Controller Features: | DRAM(enabled) |
| Manufacturer: | Toshiba |
|---|---|
| Name: | BiCS4 |
| Rebranded: | 60082 512G (Rebranded by SanDisk) |
| Type: | TLC |
| Technology: | 96-layer |
| Speed: | 533 MT/s .. 800 MT/s |
| Capacity: | 2 chips @ 4 Tbit |
| Toggle: | 3.0 |
| Topology: | Charge Trap |
| Process: | 19 nm |
| Dies per Chip: | 16 dies @ 256 Gbit |
| Planes per Die: | 2 |
| Decks per Die: | 2 |
| Word Lines: | 109 per NAND String 88.1% Vertical Efficiency |
| Read Time (tR): | 59 µs |
| Program Time (tProg): | 625 µs |
| Die Read Speed: | 551 MB/s |
| Die Write Speed: | 56 MB/s |
| Endurance: (up to) | 1500 P/E Cycles (3000 in SLC Mode) |
| Page Size: | 16 KB |
| Block Size: | 1152 Pages |
| Plane Size: | 1980 Blocks |
| Type: | DDR4-2666 CL18 |
|---|---|
| Name: | Micron MT40A512M16LY-075:E (D9WFH) |
| Capacity: | 1024 MB (1x 1024 MB) |
| Organization: | 8Gx16 |
| Sequential Read: | 3,400 MB/s |
|---|---|
| Sequential Write: | 3,100 MB/s |
| Random Read: | 550,000 IOPS |
| Random Write: | 550,000 IOPS |
| Endurance: | 400 TBW |
| Warranty: | 5 Years |
| MTBF: | 1.8 Million Hours |
| Drive Writes Per Day (DWPD): | 0.2 |
| SLC Write Cache: | approx. 16 GB (static only) |
| Speed when Cache Exhausted: | approx. 1800 MB/s |
| TRIM: | Yes |
|---|---|
| SMART: | Yes |
| Power Loss Protection: | No |
| Encryption: |
|
| RGB Lighting: | No |
| PS5 Compatible: | No |
Drive:Data collected from the Manufacturer's Datasheet NAND Die:Read latency tR: 58 µs (ABL) |