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RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM
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tukl-msd/RRAMSpec
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If you useRRAMSpec in your research, we would appreciate a citation to:
RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM,D. M. Mathew, A. Chinazzo, C. Weis, M. Jung, B. Giraud, P. Vivet, A. Levisse, N. Wehn.,International Conference on Embedded Computer Systems Architectures Modeling and Simulation (SAMOS), July, 2019, Samos Island, Greece.
For more information about our other tools please visit:http://www.uni-kl.de/3d-dram/tools/
Copyright (c) 2019, University of KaiserslauternAll rights reserved.
Redistribution and use in source and binary forms, with or withoutmodification, are permitted provided that the following conditions aremet:
Redistributions of source code must retain the above copyright notice,this list of conditions and the following disclaimer.
Redistributions in binary form must reproduce the above copyrightnotice, this list of conditions and the following disclaimer in thedocumentation and/or other materials provided with the distribution.
Neither the name of the copyright holder nor the names of itscontributors may be used to endorse or promote products derived fromthis software without specific prior written permission.
THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS"AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITEDTO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULARPURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDEROR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL,EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT LIMITED TO,PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE, DATA, ORPROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY THEORY OFLIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT (INCLUDINGNEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THISSOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
Authors: Andr'e L. Chinazzo, Deepak M. Mathew, Christian Weis
RRAMSpec requires some libraries fromboost. If you do not have it or the version you have is older than the 1.67, please follow the first four (4) steps from theirgetting started section.
RRAMSpec is built as a Qt Creator project, therefore requiring theqmake tool. If you do not have Qt installed, you can find ithere.
git clone --recursive<URL>
If your default Boost libraries version is older than the one mentioned at Installing, you need to include the path for the newer version in the project file:
Open the project file
RRAMSpec.proin your preferred text editorUncomment the following line:
INCLUDEPATH += /path/to/boost_x_xx_xEdit it to include the absolute path (from
/) of the newer Boost libraries version.Example:
INCLUDEPATH += /users/my_user/my_libs/boost_1_67_0To be sure RRAMSpec repository was properly cloned, build and run the program in test mode by using the script below!
./runTests.sh
- After getting the "No errors detected" message, you are ready to build RRAMSpec itself. To do that, simply run thebuildRRAMSpec.sh script:
./buildRRAMSpec.sh
The executable is now available underbuild/release/ by the namerramspec.
The program expect as parameters (at least) a cell, a technology and an architecture description files. The flags-cell,-tech and-arch precede the cell, technology and architecture description files, respectively. The user may choose to write a configuration file, which is a plain text file in the same syntax as the command line arguments. It is important to keep in mind that everything written in the configuration file will be appended to the original arguments. The configuration file must be preceded by the flag-conf.
./build/release/rramspec -cell<path/to/cellfilename> -tech<path/to/technologyfilename> -arch<path/to/parameterfilename>
or:
./build/release/rramspec -conf<path/to/configurationfilename>
./build/release/rramspec -cell cells/test_cell.json -tech techs/test_tech.json -arch archs/test_arch.json
or:
./build/release/rramspec -conf configs/test_config.txt
It is also possible to run multiple input files at once:
./build/release/rramspec -conf<config1.txt><config2.txt>
Note: the total number of cell, technology and architecture description files must be equal.
| Parameter | Description |
|---|---|
| Memory device HRS resistance [Ohm] | Resistance of the memory device (not the complete cell) when in High Resistance State. |
| Memory device LRS resistance [Ohm] | Resistance of the memory device (not the complete cell) when in Low Resistance State. |
| Selector model [] | Matematical model of the selector device. Can be eithersemiIdeal orIxV. |
| Selector snap voltage [V] | Voltage from which the sel. dev. becomes highly conductive. Only considered if sel. dev. model issemiIdeal. |
| Selector leakage current [nA] | Leakage current that can flow through the sel. dev. even at low voltages. Only considered if sel. dev. model issemiIdeal. |
| Selector maximum current [nA] | Saturation current of the sel. device. Only considered if sel. dev. model issemiIdeal. |
| Selector voltage point [V] | Voltage point of the IxV curve. There must be a 0 point (0A at 0V). Only considered if sel. dev. model isIxV. |
| Selector current point [V] | Current point of the IxV curve. There must be a 0 point (0A at 0V). Only considered if sel. dev. model isIxV. |
| Cell set time C [ns] | Cell set time constant CSET: tSET = CSET x exp(-KSET x VCELL). |
| Cell set time K [V^-1] | Cell set time constant KSET: tSET = CSET x exp(-KSET x VCELL). |
| Cell set time [ns] | Cell set time. If given, it disables the dependence of tSET on VCELL. |
| Cell reset time C [ns] | Cell reset time constant CRESET: tRESET = CRESET x exp(-KRESET x VCELL). |
| Cell reset time K [V^-1] | Cell set time constant KRESET: tRESET = CRESET x exp(-KRESET x VCELL). |
| Cell reset time [ns] | Cell reset time. If given, it disables the dependence of tRESET on VCELL. |
| Cell set compliance current [nA] | Compliance current of SET operation. |
| LRS/HRS read current ratio [] | Design ratio between the read current of a LRS and a HRS cell. |
| Cell width [nm] | Cell width (wordline direction). |
| Cell height [nm] | Cell width (bitline direction). |
| Cell to cell spacing [nm] | Minimum cell to cell spacing. |
| Cell thickness [nm] | Cell thickness (die direction). |
| Parameter | Description |
|---|---|
| Technology node [nm] | Name of the technology node. Assumed to be the minimal length of MOS gates. |
| Vcc [V] | Digital circuitry operating voltage. |
| Metal half pitch [nm] | Minimum metal width and metal to metal spacing. |
| Metal thickness [nm] | Metal thickness (die orientation). |
| Metal resistivity [Ohm m] | Nominal resistivity of the metal with minimum width and spacing. |
| Metal sheet resistance [Ohm] | Nominal resistance per square of the metal with minimum width and spacing. |
| Metal resistance per length [Ohm/nm] | Nominal resistance per length of the metal with minimum width and spacing. |
| Metal capacitance per length [aF/nm] | Nominal capacitance per length of the metal with minimum width and spacing. |
| MOS breakdown voltage [V] | Maximum operating voltage of the thicker oxide transistors. |
| Minimum PMOS channel length [nm] | Minimum channel length of the thicker oxide PMOS. |
| Minimum PMOS channel width [nm] | Minimum channel width of the thicker oxide PMOS. |
| Minimum NMOS channel length [nm] | Minimum channel length of the thicker oxide NMOS. |
| Minimum NMOS channel length [nm] | Minimum channel width of the thicker oxide NMOS. |
| Minimum length PMOS resistance-width product [kohm_nm] | Resistance-width product in the linear (triode) region of the minimum sized thicker oxide PMOS. |
| Minimum length NMOS resistance-width product [kohm_nm] | Resistance-width product in the linear (triode) region of the minimum sized thicker oxide NMOS. |
| Gate extension of active layer [nm] | Minimum gate (poly) extension off of the active layer. |
| Poly to poly spacing [nm] | Minimum poly to poly spacing. |
| Active layer extension of poly [nm] | Minimum active layer extension off of the poly (gate). |
| Active to active spacing [nm] | Minimum active layer to active layer spacing. |
| Parameter | Description |
|---|---|
| Crossbar array parameters | |
| Optimization mode [] | Optimization mode for crossbar array size.fixed means no opt. at all.perfomance finds the minimum write time.energy finds the minimum write energy. |
| Wordline metal width [nm] | Force the wordline metal width. Must be >= than the metal half pitch. |
| Bitline metal width [nm] | Force the bitline metal width. Must be >= than the metal half pitch. |
| Crossbar array area [nm^2] | Force area of the crossbar array. Only valid if running infixed mode. |
| Number of array columns [] | Force a number of columns of the crossbar array. Only valid if running infixed mode. |
| Number of array rows [] | Force a number of rows of the crossbar array. Only valid if running infixed mode. |
| Number of array columns [] | Force a number of columns of the crossbar array. Only valid if running infixed mode. |
| Number of array columns [] | Force a number of columns of the crossbar array. Only valid if running infixed mode. |
| Bank parameters | |
| Bank capacity [Gb] | Total storage capacity of the RRAM bank. |
| Data bus width [bits] | Number of bits transferred per transaction. |
| Prefetch [] | Number of data blocks read or written per command. |
| Minimum addressable block [bits] | Number of bits of the minimum addressable block. |
| Abbreviation | Description | Unit |
|---|---|---|
| tCCDR | Column to column delay for reads. From RD to RD. | ns |
| tCCDW | Column to column delay for reads. From WR to WR. | ns |
| tRL | Read latency. From RD to first data out. | ns |
| tWL | Write latency. From WR to first data in. | ns |
| Abbreviation | Description | Unit |
|---|---|---|
| eRD | Total energy spent per RD (read) command. | pJ |
| eWR | Total energy spent per WR (write) command. | pJ |
| Leakage Power | Background leakage power. | nW |
| Parameter | Description | Unit |
|---|---|---|
| Wordlines per Subarray | Number of wordlines in each crossbar array. | - |
| Bitlines per Subarray | Number of bitlines in each crossbar array. | - |
| Subarrays per Row | Number of crossbar arrays in each Bank row. | - |
| Subarrays per Col | Number of crossbar arrays in each Bank column. | - |
| Subarray height | Height (bitline direction) of one crossbar array. | um |
| Subarray width | Width (wordline direction) of one crossbar array. | um |
| Bank height | Height (bitline direction) of the bank. | mm |
| Bank width | Width (wordline direction) of the bank. | mm |
| Bank area | Area of one channel. | (mm)^2 |