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Polycide[1] is asilicide formed overpolysilicon. Widely used inDRAMs. In a polycideMOSFETtransistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast withsalicide processes in which silicide is formed after the polysilicon etch. Thus, with a salicide process, silicide is formed over both the polysilicon gate and the exposed monocrystalline terminal regions of the transistor in aself-aligned fashion.
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