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Reference field effect transistors based on chemically modified ISFETs

Abstract

Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (⩽1 mV pH-1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.


Publication:
Analytica Chimica Acta
Pub Date:
1990
DOI:

10.1016/S0003-2670(00)82762-2

Bibcode:
1990AcAC..230...67S
full text sources
Elsevier
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