Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

Sefaattin Tongay¹, Hasan Sahin², Changhyun Ko³, Alex Luce³, Wen Fan⁴, Kai Liu³, Jian Zhou¹, Ying-Sheng Huang⁵, Ching-Hwa Ho⁵, Jinyuan Yan⁶, D Frank Ogletree⁷, Shaul Aloni⁷, Jie Ji⁸, Shushen Li⁹, Jingbo Li⁹, F M Peeters², Junqiao Wu¹⁰

Affiliations

¹ 1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China [2] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
² Department of Physics, University of Antwerp, Groenenborgerlaan 171, Antwerpen B-2020, Belgium.
³ Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
⁴ 1] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [2] Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Anhui 230027, China.
⁵ Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
⁶ Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
⁷ Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
⁸ Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Anhui 230027, China.
⁹ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
¹⁰ 1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China [2] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [3] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

PMID:24500082
DOI: 10.1038/ncomms4252

Free article

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

Sefaattin Tongay et al. Nat Commun.2014.

Free article

.2014:5:3252.

doi: 10.1038/ncomms4252.

Authors

Affiliations

¹ 1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China [2] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
² Department of Physics, University of Antwerp, Groenenborgerlaan 171, Antwerpen B-2020, Belgium.
³ Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
⁴ 1] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [2] Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Anhui 230027, China.
⁵ Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
⁶ Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
⁷ Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
⁸ Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Anhui 230027, China.
⁹ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China.
¹⁰ 1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China [2] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [3] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

PMID:24500082
DOI: 10.1038/ncomms4252

Abstract

Semiconducting transition metal dichalcogenides consist of monolayers held together by weak forces where the layers are electronically and vibrationally coupled. Isolated monolayers show changes in electronic structure and lattice vibration energies, including a transition from indirect to direct bandgap. Here we present a new member of the family, rhenium disulphide (ReS2), where such variation is absent and bulk behaves as electronically and vibrationally decoupled monolayers stacked together. From bulk to monolayers, ReS2 remains direct bandgap and its Raman spectrum shows no dependence on the number of layers. Interlayer decoupling is further demonstrated by the insensitivity of the optical absorption and Raman spectrum to interlayer distance modulated by hydrostatic pressure. Theoretical calculations attribute the decoupling to Peierls distortion of the 1T structure of ReS2, which prevents ordered stacking and minimizes the interlayer overlap of wavefunctions. Such vanishing interlayer coupling enables probing of two-dimensional-like systems without the need for monolayers.

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Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

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Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

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