Li et al., 2018
ViewPDF| Publication | Publication Date | Title | 
|---|---|---|
| Guo et al. | Spintronics for energy-efficient computing: An overview and outlook | |
| Makarov et al. | CMOS-compatible spintronic devices: A review | |
| Yao et al. | Magnetic tunnel junction-based spintronic logic units operated by spin transfer torque | |
| Kim et al. | Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor | |
| Kang et al. | Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology | |
| Sugahara et al. | Spin-transistor electronics: An overview and outlook | |
| Wolf et al. | The promise of nanomagnetics and spintronics for future logic and universal memory | |
| Wu et al. | Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet | |
| Deng et al. | Synchronous 8-bit non-volatile full-adder based on spin transfer torque magnetic tunnel junction | |
| Manipatruni et al. | Material targets for scaling all-spin logic | |
| Dey et al. | Spintronics | |
| CN107732005B (en) | A spin majority gate device and logic circuit | |
| Kang et al. | Voltage-controlled MRAM for working memory: Perspectives and challenges | |
| D’Souza et al. | Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies | |
| CN105514260B (en) | Spin logical device and include its electronic equipment | |
| Mahmoudi et al. | Reliability analysis and comparison of implication and reprogrammable logic gates in magnetic tunnel junction logic circuits | |
| Dong et al. | Electrically Reconfigurable 3D Spin‐Orbitronics | |
| Datta et al. | What constitutes a nanoswitch? A Perspective | |
| Li et al. | Novel cascadable magnetic majority gates for implementing comprehensive logic functions | |
| Verma et al. | Spintronics-based devices to circuits: Perspectives and challenges | |
| Aull et al. | Ab initio study of magnetic tunnel junctions based on half-metallic and spin-gapless semiconducting heusler compounds: Reconfigurable diode and inverse tunnel-magnetoresistance effect | |
| Zhang et al. | 3D ferrimagnetic device for multi-bit storage and efficient in-memory computing | |
| Deb et al. | Spintronic device-structure for low-energy XOR logic using domain wall motion | |
| Zhao et al. | Spin-electronics based logic fabrics | |
| Li et al. | Performance optimization of all-spin logic device based on silver interconnects and asymmetric tunneling layer |