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Bringans et al., 1992 - Google Patents

Effect of interface chemistry on the growth of ZnSe on the Si (100) surface

Bringans et al., 1992

Document ID
5453917701660827839
Author
Bringans R
Biegelsen D
Swartz L
Ponce F
Tramontana J
Publication year
Publication venue
Physical Review B

External Links

Snippet

Heteroepitaxial growth of compound semiconductors on Si surfaces is strongly affected by the chemical bonding at the interface. In this work, the growth of ZnSe on Si (100) surfaces by molecular-beam epitaxy has been investigated primarily by transmission electron …
Continue reading atjournals.aps.org (other versions)

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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