Tsuchiya et al., 1998
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Preparation and properties of free-standing HVPE grown GaN substrates | |
| Porowski | Bulk and homoepitaxial GaN-growth and characterisation | |
| Akasaki et al. | Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE | |
| Motoki et al. | Growth and characterization of freestanding GaN substrates | |
| Lahrèche et al. | Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1) | |
| Vispute et al. | High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides | |
| Marchand et al. | Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer | |
| Tsuchiya et al. | Growth condition dependence of GaN crystal structure on (0 0 1) GaAs by hydride vapor-phase epitaxy | |
| Iwaya et al. | Realization of crack-free and high-quality thick AlxGa1− xN for UV optoelectronics using low-temperature interlayer | |
| Misaki et al. | Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy | |
| Freitas Jr et al. | Structural and optical properties of thick freestanding GaN templates | |
| Motoki et al. | Preparation of large GaN substrates | |
| Kriouche et al. | Stacking faults blocking process in (1 1− 2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy | |
| Wang et al. | Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation | |
| Yu et al. | Study of the epitaxial lateral overgrowth (ELO) process for GaN on sapphire using scanning electron microscopy and monochromatic cathodoluminescence | |
| Ueda et al. | Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer | |
| Hemmingsson et al. | Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor | |
| Kryliouk et al. | Growth of GaN single crystal substrates | |
| Wen et al. | Influence of barrier growth temperature on the properties of InGaN/GaN quantum well | |
| Yamamoto et al. | EBIC observation of n-GaN grown on sapphire substrates by MOCVD | |
| Wakahara et al. | Hydride vapor phase epitaxy of GaN on NdGaO3 substrate and realization of freestanding GaN wafers with 2-inch scale | |
| Schenk et al. | Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy | |
| Hasegawa et al. | Thick and smooth hexagonal GaN growth on GaAs (111) substrates at 1000° C with halide vapor phase epitaxy | |
| Kehagias | Nanoscale indium variation along InGaN nanopillars grown on (1 1 1) Si substrates | |
| Duan et al. | Growth and characterization of GaN on LiGaO2 |