Li et al., 2011
ViewPDF| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Complementary-like graphene logic gates controlled by electrostatic doping | |
| Yang et al. | Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors | |
| Liu et al. | The effect of dielectric capping on few-layer phosphorene transistors: Tuning the Schottky barrier heights | |
| Peng et al. | Carbon nanotube electronics: recent advances | |
| Wang et al. | Large-scale 2D electronics based on single-layer MoS 2 grown by chemical vapor deposition | |
| Choi et al. | Two-dimensional van der Waals nanosheet devices for future electronics and photonics | |
| Schwierz | Graphene transistors | |
| Liu et al. | $\hbox {MoS} _ {2} $ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming | |
| Lan et al. | Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor | |
| Haratipour et al. | Ambipolar black phosphorus MOSFETs with record n-channel transconductance | |
| Zeng et al. | Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes | |
| Wang et al. | Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures | |
| Sheng et al. | Gate stack engineering in MoS2 field‐effect transistor for reduced channel doping and hysteresis effect | |
| Alarcon et al. | Pseudosaturation and negative differential conductance in graphene field-effect transistors | |
| Geng et al. | Dielectric engineering enable to lateral anti-ambipolar MoTe 2 heterojunction | |
| Huang et al. | Ambipolarity suppression of carbon nanotube thin film transistors | |
| Lin et al. | Polarity-controllable MoS 2 transistor for adjustable complementary logic inverter applications | |
| Guo et al. | Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte | |
| Sun et al. | Dirac-cone induced gating enhancement in single-molecule field-effect transistors | |
| Hong et al. | Effects of surface roughness on the electrical characteristics of ZnO nanowire field effect transistors | |
| Ma et al. | Complementary tunneling behaviors in van der Waals vertical heterostructures | |
| Li et al. | Vertically aligned carbon nanotube field-effect transistors | |
| Song et al. | Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2 | |
| Moriyama et al. | High-performance top-gate carbon nanotube field-effect transistors and complementary metal–oxide–semiconductor inverters realized by controlling interface charges | |
| Yang et al. | Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator |