本申请要求于2023年11月23日提交到中国国家知识产权局、申请号为“202311574597.6”，发明名称为“储能变流器及其控制方法、装置和可读存储介质”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims priority to a Chinese patent application filed with the State Intellectual Property Office of China on November 23, 2023, with application number "202311574597.6", and invention name "Energy Storage Inverter and Control Method, Device and Readable Storage Medium thereof", all contents of which are incorporated by reference in this application.
本申请涉及电力电子技术领域，具体而言，涉及一种储能变流器及其控制方法、装置和可读存储介质。The present application relates to the field of power electronics technology, and in particular to an energy storage converter and a control method, device and readable storage medium thereof.
相关技术中，储能变流器通常采用两级式结构。第一级为直流-直流变换器模块(简称DC-DC变换器)，其一侧连接电池，另一侧连接母线电容，提供稳定的直流电压值。第二级为直流-交流变换器模块(简称DC-AC变换器)，其一侧连接母线电容，另一侧连接电网或负载。但是，储能变流器中的直流变换器模块虽然具有双向升压功能，但是在电池电压值和母线电压值相差较大时，由于直流电感上电流纹波较大，导致储能变流器效率较低。In the related art, the energy storage inverter usually adopts a two-stage structure. The first stage is a DC-DC converter module (referred to as DC-DC converter), one side of which is connected to the battery and the other side is connected to the bus capacitor to provide a stable DC voltage value. The second stage is a DC-AC converter module (referred to as DC-AC converter), one side of which is connected to the bus capacitor and the other side is connected to the power grid or load. However, although the DC converter module in the energy storage inverter has a bidirectional boost function, when the battery voltage value and the bus voltage value differ greatly, the current ripple on the DC inductor is large, resulting in low efficiency of the energy storage inverter.
发明内容Summary of the invention
本申请旨在至少解决现有技术或相关技术中存在的技术问题之一。The present application aims to solve at least one of the technical problems existing in the prior art or related art.
为此，本申请的第一个方面在于提出一种储能变流器。To this end, a first aspect of the present application is to provide an energy storage converter.
本申请的第二个方面在于提出一种储能变流器的控制方法。The second aspect of the present application is to propose a control method for an energy storage converter.
本申请的第三个方面在于提出一种储能变流器的控制装置。The third aspect of the present application is to provide a control device for an energy storage converter.
本申请的第四个方面在于提出另一种储能变流器的控制装置。A fourth aspect of the present application is to provide another control device for an energy storage converter.
本申请的第五个方面在于提出一种可读存储介质。A fifth aspect of the present application is to provide a readable storage medium.
有鉴于此，根据本申请的第一个方面，提出了一种储能变流器，用于将直流电源转换为交流电源，储能变流器包括：In view of this, according to a first aspect of the present application, an energy storage converter is proposed for converting a DC power supply into an AC power supply. The energy storage converter includes:
第一端口和第二端口，用于与第一直流电源连接；The first port and the second port are used to connect to a first DC power source;
直流变换器模块，包括第一电容和第二电容，第一电容的一端和第一端口连接，第一电容的另一端和第二电容的一端连接，第二电容的另一端和第二端口连接；A DC converter module includes a first capacitor and a second capacitor, wherein one end of the first capacitor is connected to the first port, the other end of the first capacitor is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the second port;
直流变换器模块还包括第一半导体组件，第一半导体组件包括第一半导体器件、第二半导体器件、第三半导体器件和第四半导体器件，第一半导体器件的第一端和第一电容连接，第一半导体器件的第二端和第二半导体器件的第一端连接，第二半导体器件的第二端和第三半导体器件的第一端连接，第三半导体器件的第二端和第四半导体器件的第一端连接，第四半导体器件的第二端和第二电容连接；The DC converter module also includes a first semiconductor component, which includes a first semiconductor device, a second semiconductor device, a third semiconductor device and a fourth semiconductor device, wherein a first end of the first semiconductor device is connected to a first capacitor, a second end of the first semiconductor device is connected to a first end of the second semiconductor device, a second end of the second semiconductor device is connected to a first end of the third semiconductor device, a second end of the third semiconductor device is connected to a first end of the fourth semiconductor device, and a second end of the fourth semiconductor device is connected to the second capacitor;
直流变换器模块还包括第三电容，第三电容的一端和第一半导体器件的第二端连接，第三电容的另一端和第三半导体器件的第二端连接；The DC converter module further includes a third capacitor, one end of the third capacitor is connected to the second end of the first semiconductor device, and the other end of the third capacitor is connected to the second end of the third semiconductor device;
电感组件，电感组件的一端与第二半导体器件的第二端相连接；an inductor component, one end of the inductor component being connected to the second end of the second semiconductor device;
第四电容，第四电容的一端与电感组件的另一端相连接，第四电容的另一端与第二端口相连接；a fourth capacitor, one end of the fourth capacitor being connected to the other end of the inductor component, and the other end of the fourth capacitor being connected to the second port;
直流变换器模块还包括中点平衡支路，中点平衡支路的第一端与第一电容的另一端相连接，中点平衡支路的第二端与第三电容的一端相连接，中点平衡支路的第三端与第三电容的另一端相连接；The DC converter module also includes a midpoint balancing branch, a first end of the midpoint balancing branch is connected to the other end of the first capacitor, a second end of the midpoint balancing branch is connected to one end of the third capacitor, and a third end of the midpoint balancing branch is connected to the other end of the third capacitor;
交流变换器模块，交流变换器模块的一端与电感组件的另一端相连接，交流变换器模块的另一端与第二端口相连接，交流变换器模块用于将直流变换器模块输出的直流电转换为交流电；An AC converter module, one end of which is connected to the other end of the inductor component, and the other end of which is connected to the second port, and the AC converter module is used to convert the DC power output by the DC converter module into AC power;
第一半导体组件用于调整第四电容的电压值，以使第四电容的电压值大于第一预设值且小于第二预设值；The first semiconductor component is used to adjust the voltage value of the fourth capacitor so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value;
第一半导体组件还用于调整第三电容的电压值，以使第三电容的电压值为第三预设值；The first semiconductor component is further used to adjust the voltage value of the third capacitor so that the voltage value of the third capacitor is a third preset value;
中点平衡支路用于调整第一电容的电压值和第二电容的电压值，以使第一电容的电压值和第二电容的电压值为第四预设值。The midpoint balancing branch is used to adjust the voltage value of the first capacitor and the voltage value of the second capacitor so that the voltage value of the first capacitor and the voltage value of the second capacitor are fourth preset values.
本技术方案中的储能变流器通过直流变换器模块的设置，可以在高直流电压值、低交流电压值场合的运行过程中，调节第四电容的电压值从而使得第四电容的电压值保持在第一预设值至第二预设值之间，进而使得电感组件的电流波纹最小，避免电感组件的电流波纹较大而造成储能变流器的效率降低。同时通过中点平衡支路调整第一电容和第二电容的电压值为第四预设值，以保证储能变流器运行的稳定性。The energy storage converter in the technical solution can adjust the voltage value of the fourth capacitor so that the voltage value of the fourth capacitor is maintained between the first preset value and the second preset value during operation in the case of high DC voltage value and low AC voltage value by setting the DC converter module, thereby minimizing the current ripple of the inductor component and avoiding the current ripple of the inductor component being large and causing the efficiency of the energy storage converter to be reduced. At the same time, the voltage value of the first capacitor and the second capacitor is adjusted to the fourth preset value through the midpoint balancing branch to ensure the stability of the operation of the energy storage converter.
根据本申请的第二个方面，提出了一种储能变流器的控制方法，储能变流器为第一方面中限定的储能变流器，储能变流器与第一直流电源连接，储能变流器的控制方法包括：According to a second aspect of the present application, a control method for an energy storage converter is proposed. The energy storage converter is the energy storage converter defined in the first aspect. The energy storage converter is connected to a first DC power supply. The control method for the energy storage converter includes:
根据储能变流器的目标输出电压值，确定第一预设值；Determining a first preset value according to a target output voltage value of the energy storage converter;
根据交流变换器模块的运行参数，确定第二预设值；Determining a second preset value according to an operating parameter of the AC converter module;
控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值。The first semiconductor component is controlled so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value.
本技术方案中的储能变流器的控制方法通过控制直流变换器模块，可以在高直流电压值、低交流电压值场合的运行过程中，调节第四电容的电压值从而使得第四电容的电压值保持在第一预设值至第二预设值之间，进而使得电感组件的电流波纹最小，避免电感组件的电流波纹较大而造成储能变流器的效率降低。The control method of the energy storage converter in the present technical solution can adjust the voltage value of the fourth capacitor so that the voltage value of the fourth capacitor is maintained between the first preset value and the second preset value by controlling the DC converter module during operation in the case of high DC voltage value and low AC voltage value, thereby minimizing the current ripple of the inductor component and avoiding the current ripple of the inductor component being large and causing the efficiency of the energy storage converter to be reduced.
根据本申请的第三个方面，提出了一种储能变流器的控制装置，储能变流器为第一方面中限定的储能变流器，储能变流器与第一直流电源连接，储能变流器的控制装置包括：According to a third aspect of the present application, a control device for an energy storage converter is provided. The energy storage converter is the energy storage converter defined in the first aspect. The energy storage converter is connected to a first DC power supply. The control device for the energy storage converter includes:
获取模块，根据储能变流器的目标输出电压值，确定第一预设值；以及An acquisition module determines a first preset value according to a target output voltage value of the energy storage converter; and
根据交流变换器模块的运行参数，确定第二预设值；Determining a second preset value according to an operating parameter of the AC converter module;
控制模块，用于控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值。A control module is used to control the first semiconductor component so that the voltage value of the fourth capacitor is greater than the first preset value and less than The second preset value.
本技术方案中的储能变流器的控制装置通过控制直流变换器模块，可以在高直流电压值、低交流电压值场合的运行过程中，调节第四电容的电压值从而使得第四电容的电压值保持在第一预设值至第二预设值之间，进而使得电感组件的电流波纹最小，避免电感组件的电流波纹较大而造成储能变流器的效率降低。The control device of the energy storage inverter in the present technical solution can adjust the voltage value of the fourth capacitor during operation in the case of high DC voltage value and low AC voltage value by controlling the DC converter module, so that the voltage value of the fourth capacitor is maintained between the first preset value and the second preset value, thereby minimizing the current ripple of the inductor component and avoiding the current ripple of the inductor component being large and causing the efficiency of the energy storage inverter to be reduced.
根据本申请的第四个方面，提出了一种储能变流器的控制装置，包括处理器和存储器，存储器中存储有程序或指令，该程序或指令被处理器执行时实现如上述任一技术方案中的储能变流器的控制方法的步骤。因此，该储能变流器的控制装置具备上述任一技术方案中的储能变流器的控制方法的全部有益效果，在此不再赘述。According to the fourth aspect of the present application, a control device for an energy storage converter is proposed, comprising a processor and a memory, wherein a program or instruction is stored in the memory, and when the program or instruction is executed by the processor, the steps of the control method for the energy storage converter in any of the above technical solutions are implemented. Therefore, the control device for the energy storage converter has all the beneficial effects of the control method for the energy storage converter in any of the above technical solutions, which will not be repeated here.
根据本申请的第五个方面，提出了一种可读存储介质，其上存储有程序或指令，程序或指令被处理器执行时实现如上述任一技术方案中的储能变流器的控制方法。因此，该可读存储介质具备上述任一技术方案中的储能变流器的控制方法的全部有益效果，在此不再赘述。According to the fifth aspect of the present application, a readable storage medium is provided, on which a program or instruction is stored, and when the program or instruction is executed by a processor, a control method for an energy storage converter as in any of the above technical solutions is implemented. Therefore, the readable storage medium has all the beneficial effects of the control method for an energy storage converter in any of the above technical solutions, which will not be repeated here.
本申请的附加方面和优点将在下面的描述部分中变得明显，或通过本申请的实践了解到。Additional aspects and advantages of the present application will become apparent in the following description or will be learned through practice of the present application.
本申请的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
图1示出了本申请的实施例中的储能变流器的电路示意图之一；FIG1 shows one of the circuit diagrams of the energy storage converter in the embodiment of the present application;
图2示出了本申请的实施例中的储能变流器的电路示意图之二；FIG2 shows a second circuit diagram of the energy storage converter in an embodiment of the present application;
图3示出了本申请的实施例中的储能变流器的控制方法的流程示意图之一；FIG3 shows one of the flow charts of the control method of the energy storage converter in the embodiment of the present application;
图4示出了本申请的实施例中的储能变流器的控制方法的流程示意图之二；FIG4 shows a second flow chart of a control method for an energy storage converter in an embodiment of the present application;
图5示出了本申请的实施例中的储能变流器的控制方法的流程示意图之三；FIG5 shows a third flow chart of a control method for an energy storage converter in an embodiment of the present application;
图6示出了本申请的实施例中的储能变流器的控制方法的流程示意图之四；FIG6 shows a fourth flow chart of a control method for an energy storage converter in an embodiment of the present application;
图7示出了本申请的实施例中的储能变流器的控制方法的波形示意图之一；FIG7 shows one of the waveform diagrams of the control method of the energy storage converter in the embodiment of the present application;
图8示出了本申请的实施例中的储能变流器的控制方法的波形示意图之二；FIG8 shows a second waveform diagram of the control method of the energy storage converter in the embodiment of the present application;
图9示出了本申请的实施例中的储能变流器的控制方法的波形示意图之三；FIG9 shows a third waveform diagram of the control method of the energy storage converter in the embodiment of the present application;
图10示出了本申请的实施例中的储能变流器的闭环控制流程图之一；FIG10 shows one of the closed-loop control flow charts of the energy storage converter in the embodiment of the present application;
图11示出了本申请的实施例中的储能变流器的控制方法的流程示意图之五；FIG11 shows a fifth flow chart of a control method for an energy storage converter in an embodiment of the present application;
图12示出了本申请的实施例中的储能变流器的闭环控制流程图之二；FIG12 shows a second closed-loop control flow chart of the energy storage converter in an embodiment of the present application;
图13示出了本申请的实施例中的储能变流器的控制方法的流程示意图之六；FIG13 shows a sixth flow chart of a control method for an energy storage converter in an embodiment of the present application;
图14示出了本申请的实施例中的储能变流器的控制方法的流程示意图之七；FIG14 shows a seventh flow chart of a control method for an energy storage converter in an embodiment of the present application;
图15示出了本申请的实施例中的储能变流器的控制装置的结构框图之一；FIG15 shows one of the structural block diagrams of the control device of the energy storage converter in the embodiment of the present application;
图16示出了本申请的实施例中的储能变流器的控制装置的结构框图之二；FIG16 shows a second structural block diagram of the control device of the energy storage converter in the embodiment of the present application;
其中，图1和图2中附图标记与部件名称之间的对应关系为：
100储能变流器，101第一端口，102第二端口，103直流变换器模块，104第一直
流电源，105第一电容，106第二电容，107第一半导体组件，1071第一半导体器件，1072第二半导体器件，1073第三半导体器件，1074第四半导体器件，108第三电容，109电感组件，110第四电容，111交流变换器模块，112支路电阻，114支路开关，116第五半导体器件，118第六半导体器件，120中点平衡支路。The corresponding relationship between the reference numerals and component names in FIG. 1 and FIG. 2 is as follows:
100 energy storage converter, 101 first port, 102 second port, 103 DC converter module, 104 first DC power supply, 105 first capacitor, 106 second capacitor, 107 first semiconductor component, 1071 first semiconductor device, 1072 second semiconductor device, 1073 third semiconductor device, 1074 fourth semiconductor device, 108 third capacitor, 109 inductor component, 110 fourth capacitor, 111 AC converter module, 112 branch resistor, 114 branch switch, 116 fifth semiconductor device, 118 sixth semiconductor device, 120 midpoint balancing branch.
为了能够更清楚地理解本申请的上述目的、特征和优点，下面结合附图和具体实施方式对本申请进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。In order to more clearly understand the above-mentioned purposes, features and advantages of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.
在下面的描述中阐述了很多具体细节以便于充分理解本申请，但是，本申请还可以采用其他不同于在此描述的其他方式来实施，因此，本申请的保护范围并不限于下面公开的具体实施例的限制。In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present application is not limited to the specific embodiments disclosed below.
下面结合图1至图16，通过具体的实施例及其应用场景对本申请实施例提供的储能变流器及其控制方法、装置和可读存储介质进行详细地说明。The energy storage converter and its control method, device and readable storage medium provided in the embodiments of the present application are described in detail below with reference to FIGS. 1 to 16 through specific embodiments and their application scenarios.
如图1所示，本申请的实施例中提供了一种储能变流器100，用于将直流电源转换为交流电源，储能变流器100包括：As shown in FIG1 , an embodiment of the present application provides an energy storage converter 100 for converting a DC power source into an AC power source. The energy storage converter 100 includes:
第一端口101和第二端口102，用于与第一直流电源104连接；The first port 101 and the second port 102 are used to connect to a first DC power source 104;
直流变换器模块103，包括第一电容105和第二电容106，第一电容105的一端和第一端口101连接，第一电容105的另一端和第二电容106的一端连接，第二电容106的另一端和第二端口102连接；The DC converter module 103 includes a first capacitor 105 and a second capacitor 106, wherein one end of the first capacitor 105 is connected to the first port 101, the other end of the first capacitor 105 is connected to one end of the second capacitor 106, and the other end of the second capacitor 106 is connected to the second port 102;
直流变换器模块103还包括第一半导体组件107，第一半导体组件107包括第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074，第一半导体器件1071的第一端和第一电容105连接，第一半导体器件1071的第二端和第二半导体器件1072的第一端连接，第二半导体器件1072的第二端和第三半导体器件1073的第一端连接，第三半导体器件1073的第二端和第四半导体器件1074的第一端连接，第四半导体器件1074的第二端和第二电容106连接；The DC converter module 103 further includes a first semiconductor component 107, which includes a first semiconductor device 1071, a second semiconductor device 1072, a third semiconductor device 1073 and a fourth semiconductor device 1074. The first end of the first semiconductor device 1071 is connected to the first capacitor 105, the second end of the first semiconductor device 1071 is connected to the first end of the second semiconductor device 1072, the second end of the second semiconductor device 1072 is connected to the first end of the third semiconductor device 1073, the second end of the third semiconductor device 1073 is connected to the first end of the fourth semiconductor device 1074, and the second end of the fourth semiconductor device 1074 is connected to the second capacitor 106.
直流变换器模块103还包括第三电容108，第三电容108的一端和第一半导体器件1071的第二端连接，第三电容108的另一端和第三半导体器件1073的第二端连接；The DC converter module 103 further includes a third capacitor 108 , one end of the third capacitor 108 is connected to the second end of the first semiconductor device 1071 , and the other end of the third capacitor 108 is connected to the second end of the third semiconductor device 1073 ;
直流变换器模块103还包括电感组件109，电感组件109的一端与第二半导体器件1072的第二端相连接；The DC converter module 103 further includes an inductor component 109, one end of the inductor component 109 is connected to the second end of the second semiconductor device 1072;
直流变换器模块103还包括第四电容110，第四电容110的一端与电感组件109的另一端相连接，第四电容110的另一端与第二端口102相连接；The DC converter module 103 further includes a fourth capacitor 110 , one end of the fourth capacitor 110 is connected to the other end of the inductor component 109 , and the other end of the fourth capacitor 110 is connected to the second port 102 ;
直流变换器模块103还包括中点平衡支路120，中点平衡支路120的第一端与第一电容105的另一端相连接，中点平衡支路120的第二端与第三电容108的一端相连接，中点平衡支路120的第三端与第三电容108的另一端相连接；The DC converter module 103 further includes a midpoint balancing branch 120, a first end of the midpoint balancing branch 120 and a first The other end of the midpoint balancing branch 120 is connected to the other end of the third capacitor 105, the second end of the midpoint balancing branch 120 is connected to one end of the third capacitor 108, and the third end of the midpoint balancing branch 120 is connected to the other end of the third capacitor 108;
储能变流器100还包括交流变换器模块111，交流变换器模块111的一端与电感组件109的另一端相连接，交流变换器模块的另一端与第二端口102相连接，交流变换器模块用于将直流变换器模块输出的直流电转换为交流电；The energy storage converter 100 further includes an AC converter module 111, one end of the AC converter module 111 is connected to the other end of the inductor component 109, and the other end of the AC converter module is connected to the second port 102, and the AC converter module is used to convert the DC power output by the DC converter module into AC power;
第一半导体组件107用于调整第四电容110的电压值，以使第四电容110的电压值大于第一预设值且小于第二预设值；The first semiconductor component 107 is used to adjust the voltage value of the fourth capacitor 110 so that the voltage value of the fourth capacitor 110 is greater than the first preset value and less than the second preset value;
第一半导体组件107还用于调整第三电容108的电压值，以使第三电容108的电压值为第三预设值；The first semiconductor component 107 is further used to adjust the voltage value of the third capacitor 108 so that the voltage value of the third capacitor 108 is a third preset value;
中点平衡支路120用于调整第一电容105的电压值和第二电容106的电压值，以使第一电容105的电压值和第二电容106的电压值为第四预设值。The midpoint balancing branch 120 is used to adjust the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106 so that the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106 are equal to a fourth preset value.
在该实施例中，提供了一种储能变流器100，用于将输入的第一直流电源104转换为交流电源进行输出，其中，第一直流电源104为提供直流电的电源。In this embodiment, an energy storage converter 100 is provided, which is used to convert an input first DC power source 104 into an AC power source for output, wherein the first DC power source 104 is a power source that provides DC power.
储能变流器100包括第一端口101和第二端口102，用于与第一直流电源104连接。The energy storage converter 100 includes a first port 101 and a second port 102 for connecting to a first DC power source 104 .
示例性地，第一端口101可以连接第一直流电源104的正极，第二端口102可以连接第一直流电源104的负极。Exemplarily, the first port 101 may be connected to the positive electrode of the first DC power source 104 , and the second port 102 may be connected to the negative electrode of the first DC power source 104 .
储能变流器100还包括直流变换器模块103，包括第一电容105和第二电容106，第一电容105的一端和第一端口101连接，第一电容105的另一端和第二电容106的一端连接，第二电容106的另一端和第二端口102连接；第一电容105和第二电容106为稳压电容，用于实现储能变流器100的电压值平衡。The energy storage inverter 100 also includes a DC converter module 103, including a first capacitor 105 and a second capacitor 106, one end of the first capacitor 105 is connected to the first port 101, the other end of the first capacitor 105 is connected to one end of the second capacitor 106, and the other end of the second capacitor 106 is connected to the second port 102; the first capacitor 105 and the second capacitor 106 are voltage-stabilizing capacitors, which are used to achieve voltage value balance of the energy storage inverter 100.
直流变换器模块103还包括第一半导体组件107，第一半导体组件107包括第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074，第一半导体器件1071的第一端和第一电容105连接，第一半导体器件1071的第二端和第二半导体器件1072的第一端连接，第二半导体器件1072的第二端和第三半导体器件1073的第一端连接，第三半导体器件1073的第二端和第四半导体器件1074的第一端连接，第四半导体器件1074的第二端和第二电容106连接。The DC converter module 103 also includes a first semiconductor component 107, which includes a first semiconductor device 1071, a second semiconductor device 1072, a third semiconductor device 1073 and a fourth semiconductor device 1074. The first end of the first semiconductor device 1071 is connected to the first capacitor 105, the second end of the first semiconductor device 1071 is connected to the first end of the second semiconductor device 1072, the second end of the second semiconductor device 1072 is connected to the first end of the third semiconductor device 1073, the second end of the third semiconductor device 1073 is connected to the first end of the fourth semiconductor device 1074, and the second end of the fourth semiconductor device 1074 is connected to the second capacitor 106.
第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074具体为半导体特性的器件。The first semiconductor device 1071 , the second semiconductor device 1072 , the third semiconductor device 1073 , and the fourth semiconductor device 1074 are specifically devices having semiconductor characteristics.
示例性地，第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074可以包括IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极晶体管)。Exemplarily, the first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 and the fourth semiconductor device 1074 may include IGBTs (Insulated Gate Bipolar Transistor).
需要说明的是，第一半导体组件107为可以控制通断的器件，且第一半导体组件107的状态切换时长较快，进而保证了储能变流器100的状态切换速度。It should be noted that the first semiconductor component 107 is a device that can be controlled to be on and off, and the state switching time of the first semiconductor component 107 is relatively fast, thereby ensuring the state switching speed of the energy storage converter 100 .
示例性地，第一半导体组件107的状态切换时长可以具体为5ms至10ms。Exemplarily, the state switching duration of the first semiconductor component 107 may be specifically 5 ms to 10 ms.
直流变换器模块103还包括第三电容108，第三电容108的一端和第一半导体器件1071的第二端连接，第三电容108的另一端和第三半导体器件1073的第二端连接；其中，第三电容108为稳压电容，用于实现储能变流器100的电压值平衡。The DC converter module 103 further includes a third capacitor 108, one end of the third capacitor 108 is connected to the second end of the first semiconductor device 1071, and the other end of the third capacitor 108 is connected to the second end of the third semiconductor device 1073; The capacitor 108 is a voltage stabilizing capacitor, which is used to achieve voltage balance of the energy storage converter 100 .
示例性地，第三电容108可以与第一电容105和第二电容106实现储能变流器100的电压值平衡。Exemplarily, the third capacitor 108 can achieve voltage balance of the energy storage converter 100 together with the first capacitor 105 and the second capacitor 106 .
直流变换器模块103还包括电感组件109，电感组件109的一端与第二半导体器件1072的第二端相连接，用于储存第一直流电源104的电能。The DC converter module 103 further includes an inductor component 109 , one end of which is connected to the second end of the second semiconductor device 1072 , and is used to store the electric energy of the first DC power source 104 .
直流变换器模块103还包括第四电容110，第四电容110的一端与电感组件109的另一端相连接，第四电容110的另一端与第二端口102相连接。The DC converter module 103 further includes a fourth capacitor 110 . One end of the fourth capacitor 110 is connected to the other end of the inductor component 109 , and the other end of the fourth capacitor 110 is connected to the second port 102 .
储能变流器100还包括交流变换器模块111，交流变换器模块111的一端与电感组件109的另一端相连接，交流变换器模块的另一端与第二端口102相连接，交流变换器模块用于将直流变换器模块输出的直流电转换为交流电。交流变换器模块111用于将直流变换器模块103所输出的直流电转换为交流电并进行输出。The energy storage converter 100 further includes an AC converter module 111, one end of which is connected to the other end of the inductor assembly 109, and the other end of which is connected to the second port 102. The AC converter module is used to convert the DC power output by the DC converter module into AC power. The AC converter module 111 is used to convert the DC power output by the DC converter module 103 into AC power and output it.
示例性的，交流变换器模块111可以为H桥电路、NPC电路或者ANPC电路。Exemplarily, the AC converter module 111 may be an H-bridge circuit, an NPC circuit, or an ANPC circuit.
需要说明的是，第一半导体组件107用于调整第四电容110的电压值，以使第四电容110的电压值大于第一预设值且小于第二预设值；进而使得电感组件109的电流波纹最小，避免电感组件109的电流波纹较大而造成储能变流器100的效率降低。It should be noted that the first semiconductor component 107 is used to adjust the voltage value of the fourth capacitor 110 so that the voltage value of the fourth capacitor 110 is greater than the first preset value and less than the second preset value; thereby minimizing the current ripple of the inductor component 109, thereby avoiding the current ripple of the inductor component 109 being large and causing a decrease in the efficiency of the energy storage inverter 100.
进一步地，第一半导体组件107还用于调整第三电容108的电压值，以使第三电容108的电压值为第三预设值，进而保证储能电容器运行过程中电流传输过程中的电压值的稳定性。Furthermore, the first semiconductor component 107 is also used to adjust the voltage value of the third capacitor 108 so that the voltage value of the third capacitor 108 is a third preset value, thereby ensuring the stability of the voltage value during the current transmission process during the operation of the energy storage capacitor.
进一步地，中点平衡支路120用于调整第一电容105的电压值和第二电容106的电压值，以使第一电容105的电压值和第二电容106的电压值为第四预设值。以保证储能变流器100的稳定运行。Furthermore, the midpoint balancing branch 120 is used to adjust the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106 so that the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106 are fourth preset values to ensure stable operation of the energy storage converter 100 .
本实施例中的储能变流器100通过直流变换器模块的设置，可以在高直流电压值、低交流电压值场合的运行过程中，调节第四电容110的电压值从而使得第四电容110的电压值保持在第一预设值至第二预设值之间，进而使得电感组件109的电流波纹最小，避免电感组件109的电流波纹较大而造成储能变流器100的效率降低。同时通过中点平衡支路120调整第一电容105和第二电容106的电压值为第四预设值，以保证储能变流器100运行的稳定性。The energy storage converter 100 in this embodiment can adjust the voltage value of the fourth capacitor 110 during operation in the case of high DC voltage value and low AC voltage value by setting the DC converter module, so that the voltage value of the fourth capacitor 110 is maintained between the first preset value and the second preset value, thereby minimizing the current ripple of the inductor component 109, and avoiding the current ripple of the inductor component 109 being large and causing the efficiency of the energy storage converter 100 to be reduced. At the same time, the voltage values of the first capacitor 105 and the second capacitor 106 are adjusted to the fourth preset value through the midpoint balancing branch 120 to ensure the stability of the operation of the energy storage converter 100.
在一些实施例中，可选地，提出了一种储能变流器100，在第一直流电源104的电压值的二分之一小于第一预设值的情况下，控制第一半导体组件107以第一模式运行，以使第四电容110的电压值大于第一预设值；In some embodiments, optionally, an energy storage converter 100 is proposed, in which, when one-half of the voltage value of the first DC power supply 104 is less than the first preset value, the first semiconductor component 107 is controlled to operate in the first mode so that the voltage value of the fourth capacitor 110 is greater than the first preset value;
在第一模式下，第一半导体器件1071和第二半导体器件1072的占空比大于0.5，且第三半导体器件1073和第四半导体器件1074的占空比小于0.5；In the first mode, the duty ratios of the first semiconductor device 1071 and the second semiconductor device 1072 are greater than 0.5, and the duty ratios of the third semiconductor device 1073 and the fourth semiconductor device 1074 are less than 0.5;
在第一直流电源104的电压值的二分之一大于第二预设值的情况下，控制第一半导体组件107以第二模式运行，以使第四电容110的电压值小于第二预设值；When half of the voltage value of the first DC power source 104 is greater than the second preset value, the first semiconductor component 107 is controlled to operate in the second mode so that the voltage value of the fourth capacitor 110 is less than the second preset value;
在第二模式下，第一半导体器件1071和第二半导体器件1072的占空比小于0.5，且第三半导体器件1073和第四半导体器件1074的占空比大于0.5；In the second mode, the duty ratio of the first semiconductor device 1071 and the second semiconductor device 1072 is less than 0.5, and The duty ratio of the third semiconductor device 1073 and the fourth semiconductor device 1074 is greater than 0.5;
在第一直流电源104的电压值的二分之一大于第一预设值且小于第二预设值的情况下，控制第一半导体组件107以第三模式运行，以使第四电容110的电压值大于第一预设值且小于第二预设值；When half of the voltage value of the first DC power source 104 is greater than the first preset value and less than the second preset value, the first semiconductor component 107 is controlled to operate in the third mode so that the voltage value of the fourth capacitor 110 is greater than the first preset value and less than the second preset value;
在第三模式下，第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074的占空比为0.5。In the third mode, the duty ratio of the first semiconductor device 1071 , the second semiconductor device 1072 , the third semiconductor device 1073 , and the fourth semiconductor device 1074 is 0.5.
在该实施例中，在第一直流电源104的电压值的二分之一小于第一预设值的情况下，控制第一半导体组件107以第一模式运行，以使第四电容110的电压值大于第一预设值。In this embodiment, when half of the voltage value of the first DC power source 104 is less than the first preset value, the first semiconductor component 107 is controlled to operate in the first mode so that the voltage value of the fourth capacitor 110 is greater than the first preset value.
具体地，在第一模式下，第一半导体器件1071和第二半导体器件1072的占空比大于0.5，且第三半导体器件1073和第四半导体器件1074的占空比小于0.5。Specifically, in the first mode, the duty ratios of the first semiconductor device 1071 and the second semiconductor device 1072 are greater than 0.5, and the duty ratios of the third semiconductor device 1073 and the fourth semiconductor device 1074 are less than 0.5.
在第一直流电源104的电压值的二分之一大于第二预设值的情况下，控制第一半导体组件107以第二模式运行，以使第四电容110的电压值小于第二预设值。When half of the voltage value of the first DC power source 104 is greater than the second preset value, the first semiconductor component 107 is controlled to operate in the second mode so that the voltage value of the fourth capacitor 110 is less than the second preset value.
具体地，在第二模式下，第一半导体器件1071和第二半导体器件1072的占空比小于0.5，且第三半导体器件1073和第四半导体器件1074的占空比大于0.5。Specifically, in the second mode, the duty ratios of the first semiconductor device 1071 and the second semiconductor device 1072 are less than 0.5, and the duty ratios of the third semiconductor device 1073 and the fourth semiconductor device 1074 are greater than 0.5.
在第一直流电源104的电压值的二分之一大于第一预设值且小于第二预设值的情况下，控制第一半导体组件107以第三模式运行，以使第四电容110的电压值大于第一预设值且小于第二预设值。When half of the voltage of the first DC power source 104 is greater than the first preset value and less than the second preset value, the first semiconductor component 107 is controlled to operate in the third mode so that the voltage of the fourth capacitor 110 is greater than the first preset value and less than the second preset value.
具体地，在第三模式下，第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074的占空比为0.5。Specifically, in the third mode, the duty ratio of the first semiconductor device 1071 , the second semiconductor device 1072 , the third semiconductor device 1073 , and the fourth semiconductor device 1074 is 0.5.
可以理解的是，在第一直流电源104的电压值的二分之一小于第一预设值的情况下或者大于第二预设值的情况下，会导致第四电容110的电压值过低或者过高，进而导致电感组件109的电流波纹较大而造成储能变流器100的效率降低。此时通过调节第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074的占空比，从而实现第四电容110的电压值的调节，使得第四电容110的电压值保持在第一预设值至第二预设值之间，进而使得电感组件109的电流波纹最小，避免电感组件109的电流波纹较大而造成储能变流器100的效率降低。It can be understood that when half of the voltage value of the first DC power supply 104 is less than the first preset value or greater than the second preset value, the voltage value of the fourth capacitor 110 will be too low or too high, which will cause the current ripple of the inductor component 109 to be large, resulting in a reduction in the efficiency of the energy storage converter 100. At this time, by adjusting the duty cycle of the first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 and the fourth semiconductor device 1074, the voltage value of the fourth capacitor 110 is adjusted, so that the voltage value of the fourth capacitor 110 is maintained between the first preset value and the second preset value, thereby minimizing the current ripple of the inductor component 109, and avoiding the current ripple of the inductor component 109 to be large and causing the efficiency of the energy storage converter 100 to be reduced.
相应地，在第一直流电源104的电压值的二分之一大于第一预设值且小于第二预设值的情况下，控制第一半导体组件107以第三模式运行，以使第四电容110的电压值大于第一预设值且小于第二预设值。使得电感组件109的电流波纹最小，避免电感组件109的电流波纹较大而造成储能变流器100的效率降低。Accordingly, when half of the voltage value of the first DC power supply 104 is greater than the first preset value and less than the second preset value, the first semiconductor component 107 is controlled to operate in the third mode, so that the voltage value of the fourth capacitor 110 is greater than the first preset value and less than the second preset value, so that the current ripple of the inductor component 109 is minimized, and the efficiency of the energy storage converter 100 is prevented from being reduced due to the large current ripple of the inductor component 109.
本实施例中通过对第一直流电源104与第一预设值和第二预设值进行比较，进而根据比较结果对第一半导体组件107进行运行模式的控制，以使第四电容110的电压值大于第一预设值且小于第二预设值。使得电感组件109的电流波纹最小，避免电感组件109的电流波纹较大而造成储能变流器100的效率降低。In this embodiment, the first DC power supply 104 is compared with the first preset value and the second preset value, and then the operation mode of the first semiconductor component 107 is controlled according to the comparison result, so that the voltage value of the fourth capacitor 110 is greater than the first preset value and less than the second preset value, so that the current ripple of the inductor component 109 is minimized, and the efficiency of the energy storage converter 100 is prevented from being reduced due to the large current ripple of the inductor component 109.
在一些实施例中，可选地，在第三电容108的电压值大于第三预设值，且电感组件109的电流平均值大于0的情况下，减少第一半导体器件1071和第三半导体器件1073的导通时长，增加第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值；In some embodiments, optionally, when the voltage value of the third capacitor 108 is greater than the third preset value, and the inductor component When the average current value of 109 is greater than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is reduced, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is increased, so that the voltage value of the third capacitor 108 is equal to the third preset value;
在第三电容108的电压值大于第三预设值，且电感组件109的电流平均值小于0的情况下，增加第一半导体器件1071和第三半导体器件1073的导通时长，减少第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值；When the voltage value of the third capacitor 108 is greater than the third preset value and the average current value of the inductor component 109 is less than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is increased, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is reduced, so that the voltage value of the third capacitor 108 is equal to the third preset value;
在第三电容108的电压值小于第三预设值，且电感组件109的电流平均值大于0的情况下，增加第一半导体器件1071和第三半导体器件1073的导通时长，减少第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值；When the voltage value of the third capacitor 108 is less than the third preset value and the average current value of the inductor component 109 is greater than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is increased, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is reduced, so that the voltage value of the third capacitor 108 is equal to the third preset value;
在第三电容108的电压值小于第三预设值，且电感组件109的电流平均值小于0的情况下，减少第一半导体器件1071和第三半导体器件1073的导通时长，增加第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值。When the voltage value of the third capacitor 108 is less than the third preset value and the average current value of the inductor component 109 is less than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is reduced, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is increased, so that the voltage value of the third capacitor 108 is equal to the third preset value.
在该实施例中，在第三电容108的电压值大于第三预设值，且电感组件109的电流平均值大于0的情况下，减少第一半导体器件1071和第三半导体器件1073的导通时长，增加第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值，导通时长为第一半导体器件1071、第二半导体器件1072、第三半导体器件1073或第四半导体器件1074处于导通状态的时长。In this embodiment, when the voltage value of the third capacitor 108 is greater than the third preset value and the average current value of the inductor component 109 is greater than 0, the on-time of the first semiconductor device 1071 and the third semiconductor device 1073 is reduced, and the on-time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is increased, so that the voltage value of the third capacitor 108 is equal to the third preset value, and the on-time is the time when the first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 or the fourth semiconductor device 1074 is in the on state.
在第三电容108的电压值大于第三预设值，且电感组件109的电流平均值小于0的情况下，增加第一半导体器件1071和第三半导体器件1073的导通时长，减少第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值。When the voltage value of the third capacitor 108 is greater than the third preset value and the average current value of the inductor component 109 is less than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is increased, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is reduced, so that the voltage value of the third capacitor 108 is equal to the third preset value.
在第三电容108的电压值小于第三预设值，且电感组件109的电流平均值大于0的情况下，增加第一半导体器件1071和第三半导体器件1073的导通时长，减少第二半导体器件1072和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值。When the voltage value of the third capacitor 108 is less than the third preset value and the average current value of the inductor component 109 is greater than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is increased, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is reduced, so that the voltage value of the third capacitor 108 is equal to the third preset value.
在第三电容108的电压值小于第三预设值，且电感组件109的电流平均值小于0的情况下，减少第一半导体器件1071和第三半导体器件1073的导通时长，增加第二半导体器件1072和第四半导体器件1074的导通时长以使第三电容108的电压值等于第三预设值。When the voltage value of the third capacitor 108 is less than the third preset value and the average current value of the inductor component 109 is less than 0, the conduction time of the first semiconductor device 1071 and the third semiconductor device 1073 is reduced, and the conduction time of the second semiconductor device 1072 and the fourth semiconductor device 1074 is increased to make the voltage value of the third capacitor 108 equal to the third preset value.
本实施例中的储能变流器100通过调整第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074的导通时长，以使第三电容108的电压值等于第三预设值，实现了储能变流器100的电压值平衡，进而保证了储能变流器100的安全运行。The energy storage converter 100 in this embodiment adjusts the conduction time of the first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 and the fourth semiconductor device 1074 so that the voltage value of the third capacitor 108 is equal to the third preset value, thereby achieving voltage balance of the energy storage converter 100 and ensuring the safe operation of the energy storage converter 100.
在一些实施例中，可选地，第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074均包括一个绝缘栅晶体管和一个二极管，用于控制第一端口101和第二端口102与电感组件109之间的电流流向。In some embodiments, optionally, the first semiconductor device 1071 , the second semiconductor device 1072 , the third semiconductor device 1073 and the fourth semiconductor device 1074 each include an insulated gate transistor and a diode for controlling the current flow between the first port 101 and the second port 102 and the inductor component 109 .
在该实施例中，第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074均包括一个绝缘栅晶体管和一个二极管，用于控制第一端口101和第二端口102与电感组件109之间的电流流向，其中，二极管和绝缘栅晶体管反并联。In this embodiment, the first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 and the fourth semiconductor device 1074 each include an insulated gate transistor and a diode for controlling the first port 101 and the The current flows between the second port 102 and the inductor component 109 , wherein the diode and the insulated gate transistor are connected in anti-parallel.
示例性地，二极管的正极和绝缘栅晶体管的源极连接，二极管的负极和绝缘栅晶体管的漏极连接。Exemplarily, the anode of the diode is connected to the source of the insulated gate transistor, and the cathode of the diode is connected to the drain of the insulated gate transistor.
本实施例中的储能变流器100中的第一半导体器件1071、第二半导体器件1072、第三半导体器件1073和第四半导体器件1074均包括一个绝缘栅晶体管和一个二极管，实现了储能变流器100的电压值平衡，进而保证了储能变流器100的安全运行。The first semiconductor device 1071, the second semiconductor device 1072, the third semiconductor device 1073 and the fourth semiconductor device 1074 in the energy storage converter 100 in this embodiment each include an insulated gate transistor and a diode, thereby achieving voltage balance of the energy storage converter 100 and thereby ensuring safe operation of the energy storage converter 100.
在一些实施例中，如图2所示，可选地，中点平衡支路120还包括：In some embodiments, as shown in FIG2 , optionally, the midpoint balancing branch 120 further includes:
支路电阻112，支路电阻112的一端与第一电容105的另一端相连接；A branch resistor 112, one end of the branch resistor 112 is connected to the other end of the first capacitor 105;
支路开关114，支路开关114的一端与支路电阻112的另一端相连接；A branch switch 114, one end of the branch switch 114 is connected to the other end of the branch resistor 112;
第五半导体器件116，第五半导体器件116的正极与支路开关114的另一端相连接，第五半导体器件116的负极与第三电容108的一端相连接；a fifth semiconductor device 116, wherein the positive electrode of the fifth semiconductor device 116 is connected to the other end of the branch switch 114, and the negative electrode of the fifth semiconductor device 116 is connected to one end of the third capacitor 108;
第六半导体器件118，第六半导体器件118的正极与第三电容108的另一端相连接，第六半导体器件118的负极与支路开关114的另一端相连接；a sixth semiconductor device 118, wherein the positive electrode of the sixth semiconductor device 118 is connected to the other end of the third capacitor 108, and the negative electrode of the sixth semiconductor device 118 is connected to the other end of the branch switch 114;
支路开关114用于控制第一电容105的电压值和第二电容106的电压值等于第一直流电源104的电压值的二分之一。The branch switch 114 is used to control the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106 to be equal to half of the voltage value of the first DC power supply 104 .
在该实施例中，中点平衡支路120包括支路电阻112和支路开关114，通过支路开关114的通断，可以实现支路电阻112中的电流的通断。进一步地，直流变换器模块103还包括第五半导体器件116，第五半导体器件116的正极与支路开关114的另一端相连接，第五半导体器件116的负极与第三电容108的一端相连接；第六半导体器件118，第六半导体器件118的正极与第三电容108的另一端相连接，第六半导体器件118的负极与支路开关114的另一端相连接。第五半导体器件116和第六半导体器件118用于限制支路电阻112中的电流流向。In this embodiment, the midpoint balancing branch 120 includes a branch resistor 112 and a branch switch 114. The current in the branch resistor 112 can be switched on and off by switching the branch switch 114 on and off. Further, the DC converter module 103 also includes a fifth semiconductor device 116, the positive electrode of the fifth semiconductor device 116 is connected to the other end of the branch switch 114, and the negative electrode of the fifth semiconductor device 116 is connected to one end of the third capacitor 108; and a sixth semiconductor device 118, the positive electrode of the sixth semiconductor device 118 is connected to the other end of the third capacitor 108, and the negative electrode of the sixth semiconductor device 118 is connected to the other end of the branch switch 114. The fifth semiconductor device 116 and the sixth semiconductor device 118 are used to limit the current flow direction in the branch resistor 112.
示例性的，第五半导体器件116和第六半导体器件118均可以为一个二极管。By way of example, each of the fifth semiconductor device 116 and the sixth semiconductor device 118 may be a diode.
本实施例中的储能变流器100通过控制支路开关114的开启或关闭，从而实现了将支路电阻112连接至第一半导体组件107中，进而实现了对第一电容105的电压值和第二电容106的电压值的调整，以使第一电容105的电压值等于第二电容106的电压值，实现了储能变流器100的电压值平衡，进而保证了储能变流器100的安全运行。The energy storage converter 100 in this embodiment controls the opening or closing of the branch switch 114, thereby connecting the branch resistor 112 to the first semiconductor component 107, and further adjusting the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106, so that the voltage value of the first capacitor 105 is equal to the voltage value of the second capacitor 106, thereby achieving voltage balance of the energy storage converter 100, and ensuring safe operation of the energy storage converter 100.
在一些实施例中，可选地，在第一电容105的电压值和第二电容106的电压值不相等，且第二电容106的电压值小于第一直流电源104的电压值与第三电容108的电压值之差的情况下，控制支路开关114闭合，且控制第一半导体器件1071导通；In some embodiments, optionally, when the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the second capacitor 106 is less than the difference between the voltage value of the first DC power supply 104 and the voltage value of the third capacitor 108, the branch switch 114 is controlled to be closed, and the first semiconductor device 1071 is controlled to be turned on;
在第一电容105的电压值和第二电容106的电压值不相等，且第一电容105的电压值小于第一直流电源104的电压值与第三电容108的电压值之差的情况下，控制支路开关114闭合，且控制第四半导体器件1074导通。When the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the first capacitor 105 is less than the difference between the voltage value of the first DC power supply 104 and the voltage value of the third capacitor 108, the branch switch 114 is controlled to be closed, and the fourth semiconductor device 1074 is controlled to be turned on.
在该实施例中，在第一电容105的电压值和第二电容106的电压值不相等，且第二电容106的电压值小于第一直流电源104的电压值与第三电容108的电压值之差的情况下，也就是第一电容105的电压值和第二电容106的电压值不相等，且第一电容105的电压值大于第二电容106的电压值的情况下。控制支路开关114闭合，以使支路电阻112连接至第一半导体组件107中。进一步地，在支路开关114闭合之后，控制第一半导体器件1071导通，从而使得电流从第一半导体组件107流入支路电阻112，进而使得第一电容105的电压值减小，第二电容106的电压值增加，以使得第一电容105的电压值等于第二电容106的电压值。In this embodiment, when the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the second capacitor 106 is less than the difference between the voltage value of the first DC power supply 104 and the voltage value of the third capacitor 108, That is, when the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the first capacitor 105 is greater than the voltage value of the second capacitor 106. The branch switch 114 is controlled to be closed, so that the branch resistor 112 is connected to the first semiconductor component 107. Further, after the branch switch 114 is closed, the first semiconductor device 1071 is controlled to be turned on, so that the current flows from the first semiconductor component 107 to the branch resistor 112, thereby reducing the voltage value of the first capacitor 105 and increasing the voltage value of the second capacitor 106, so that the voltage value of the first capacitor 105 is equal to the voltage value of the second capacitor 106.
在第一电容105的电压值和第二电容106的电压值不相等，且第一电容105的电压值小于第一直流电源104的电压值与第三电容108的电压值之差的情况下，也就是第一电容105的电压值和第二电容106的电压值不相等，且第一电容105的电压值小于第二电容106的电压值的情况下。控制支路开关114闭合，以使支路电阻112连接至第一半导体组件107中。进一步地，在支路开关114闭合之后，控制第四半导体器件1074导通，从而使得电流从支路电阻112流入第一半导体组件107，进而使得第一电容105的电压值增加，第二电容106的电压值减小，以使得第一电容105的电压值等于第二电容106的电压值。In the case where the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the first capacitor 105 is less than the difference between the voltage value of the first DC power supply 104 and the voltage value of the third capacitor 108, that is, the voltage value of the first capacitor 105 is not equal to the voltage value of the second capacitor 106, and the voltage value of the first capacitor 105 is less than the voltage value of the second capacitor 106. Control the branch switch 114 to close so that the branch resistor 112 is connected to the first semiconductor component 107. Further, after the branch switch 114 is closed, the fourth semiconductor device 1074 is controlled to be turned on, so that the current flows from the branch resistor 112 to the first semiconductor component 107, thereby increasing the voltage value of the first capacitor 105 and reducing the voltage value of the second capacitor 106, so that the voltage value of the first capacitor 105 is equal to the voltage value of the second capacitor 106.
本实施例中的储能变流器100通过控制支路开关114的开启或关闭，同时配合第一半导体器件1071和第四半导体器件1074的导通，从而实现了将支路电阻112连接至第一半导体组件107中，进而实现了对第一电容105的电压值和第二电容106的电压值的调整，以使第一电容105的电压值等于第二电容106的电压值，实现了储能变流器100的电压值平衡，进而保证了储能变流器100的安全运行。The energy storage converter 100 in this embodiment controls the opening or closing of the branch switch 114 and cooperates with the conduction of the first semiconductor device 1071 and the fourth semiconductor device 1074 to connect the branch resistor 112 to the first semiconductor component 107, thereby adjusting the voltage value of the first capacitor 105 and the voltage value of the second capacitor 106, so that the voltage value of the first capacitor 105 is equal to the voltage value of the second capacitor 106, thereby achieving voltage balance of the energy storage converter 100 and ensuring safe operation of the energy storage converter 100.
在一些实施例中，可选地，第五半导体器件116和第六半导体器件118均包括一个二极管，用于控制支路电阻112与第三电容108之间的电流流向。In some embodiments, optionally, each of the fifth semiconductor device 116 and the sixth semiconductor device 118 includes a diode for controlling the current flow between the branch resistor 112 and the third capacitor 108 .
如图3所示，本申请的实施例中提供了一种储能变流器的控制方法，包括：As shown in FIG3 , an embodiment of the present application provides a control method for an energy storage converter, including:
步骤302，根据储能变流器的目标输出电压值，确定第一预设值；Step 302, determining a first preset value according to a target output voltage value of the energy storage converter;
步骤304，根据交流变换器模块的运行参数，确定第二预设值；Step 304, determining a second preset value according to the operating parameters of the AC converter module;
步骤306，控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值。Step 306 , controlling the first semiconductor component so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value.
在该实施例中，提供了一种储能变流器的控制方法，储能变流器为上述任一实施例中的储能变流器，储能变流器与第一直流电源连接。In this embodiment, a control method for an energy storage converter is provided. The energy storage converter is the energy storage converter in any of the above embodiments. The energy storage converter is connected to a first DC power supply.
首先获取储能电流器的目标输出电压值，根据目标输出电压值，可以确定第一预设值。First, a target output voltage value of the energy storage current device is obtained, and a first preset value can be determined according to the target output voltage value.
示例性地，若输出为三相三线制，输出电压值为Uac1，则第一预设值Udcmin为：
For example, if the output is a three-phase three-wire system and the output voltage value is Uac1 , then the first preset value Udcmin is:
若输出为三相四线制，输出电压值为Uac2，则第一预设值Udcmin为：
If the output is a three-phase four-wire system and the output voltage value is Uac2 , then the first preset value Udcmin is:
其中，k为大于1的补偿系数，通常和器件压降、死区时间等相关，一般取1.02左右。Among them, k is a compensation coefficient greater than 1, which is usually related to the device voltage drop, dead time, etc., and is generally around 1.02.
进一步地，控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值。Furthermore, the first semiconductor component is controlled so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value.
具体地，在第一直流电源的电压值的二分之一小于第一预设值的情况下，控制第一半导体组件以第一模式运行，以使第四电容的电压值大于第一预设值；Specifically, when one half of the voltage value of the first DC power supply is less than the first preset value, the first semiconductor component is controlled to operate in the first mode so that the voltage value of the fourth capacitor is greater than the first preset value;
在第一模式下，第一半导体器件和第二半导体器件的占空比大于0.5，且第三半导体器件和第四半导体器件的占空比小于0.5。In the first mode, the duty ratios of the first semiconductor device and the second semiconductor device are greater than 0.5, and the duty ratios of the third semiconductor device and the fourth semiconductor device are less than 0.5.
具体地，在第一模式下，如图10所示，可以设置第四电容的电压值Uc4参考值为U*c4，参考值U*c4和采样得到的Uc4相减，差值经过电压值环UPI(s)得到电感电流的参考值IL*。参考值IL*和采样得到的IL相减，差值经过电流环CPI(s)得到占空比D。第一模式下直流变换器模块的波形示意图如图7所示。其中，S1为第一半导体器件，S2为第二半导体器件，S3为第三半导体器件，S4为第四半导体器件，UL1为电感组件的电压值，IL1为电感组件的电流。Specifically, in the first mode, as shown in FIG10 , the reference value of the voltage value Uc4 of the fourth capacitor can be set to U*c4 , and the reference value U*c4 is subtracted from the sampled Uc4 , and the difference is passed through the voltage value loop UPI(s) to obtain the reference valueIL * of the inductor current. The reference valueIL * is subtracted from the sampledIL , and the difference is passed through the current loop CPI(s) to obtain the duty cycle D. The waveform diagram of the DC converter module in the first mode is shown in FIG7 . Among them,S1 is a first semiconductor device,S2 is a second semiconductor device,S3 is a third semiconductor device,S4 is a fourth semiconductor device, UL1 is the voltage value of the inductor component, andIL1 is the current of the inductor component.
在第一直流电源的电压值的二分之一大于第二预设值的情况下，控制第一半导体组件以第二模式运行，以使第四电容的电压值小于第二预设值。When one half of the voltage value of the first DC power source is greater than the second preset value, the first semiconductor component is controlled to operate in the second mode so that the voltage value of the fourth capacitor is less than the second preset value.
在第二模式下，第一半导体器件和第二半导体器件的占空比小于0.5，且第三半导体器件和第四半导体器件的占空比大于0.5。In the second mode, the duty ratios of the first semiconductor device and the second semiconductor device are less than 0.5, and the duty ratios of the third semiconductor device and the fourth semiconductor device are greater than 0.5.
具体地，在第二模式下，如图10所示，可以设置第四电容的电压值Uc4参考值为U*c4，参考值U*c4和采样得到的Uc4相减，差值经过电压值环UPI(s)得到电感电流的参考值IL*。参考值IL*和采样得到的IL相减，差值经过电流环CPI(s)得到占空比D。第二模式下直流变换器模块的波形示意图如图8所示。其中，S1为第一半导体器件，S2为第二半导体器件，S3为第三半导体器件，S4为第四半导体器件，UL1为电感组件的电压值，IL1为电感组件的电流。Specifically, in the second mode, as shown in FIG10 , the reference value of the voltage value Uc4 of the fourth capacitor can be set to U*c4 , and the reference value U*c4 is subtracted from the sampled Uc4 , and the difference is passed through the voltage value loop UPI(s) to obtain the reference valueIL * of the inductor current. The reference valueIL * is subtracted from the sampledIL , and the difference is passed through the current loop CPI(s) to obtain the duty cycle D. The waveform diagram of the DC converter module in the second mode is shown in FIG8 . Among them,S1 is a first semiconductor device,S2 is a second semiconductor device,S3 is a third semiconductor device,S4 is a fourth semiconductor device, UL1 is the voltage value of the inductor component, and IL1 is the current of the inductor component.
在第一直流电源的电压值的二分之一大于第一预设值且小于第二预设值的情况下，控制第一半导体组件以第三模式运行，以使第四电容的电压值大于第一预设值且小于第二预设值；When one half of the voltage value of the first DC power source is greater than the first preset value and less than the second preset value, the first semiconductor component is controlled to operate in the third mode so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value;
在第三模式下，第一半导体器件、第二半导体器件、第三半导体器件和第四半导体器件的占空比为0.5。第三模式下直流变换器模块的波形示意图如图9所示。其中，S1为第一半导体器件，S2为第二半导体器件，S3为第三半导体器件，S4为第四半导体器件，UL1为电感组件的电压值，IL1为电感组件的电流。In the third mode, the duty cycle of the first semiconductor device, the second semiconductor device, the third semiconductor device and the fourth semiconductor device is 0.5. A waveform diagram of the DC converter module in the third mode is shown in FIG9 . Among them,S1 is the first semiconductor device,S2 is the second semiconductor device,S3 is the third semiconductor device,S4 is the fourth semiconductor device, UL1 is the voltage value of the inductor component, and IL1 is the current of the inductor component.
本实施例中通过对第一直流电源与第一预设值和第二预设值进行比较，进而根据比较结果对第一半导体组件进行运行模式的控制，以使第四电容的电压值大于第一预设值且小于第二预设值。使得电感组件的电流波纹最小，避免电感组件的电流波纹较大而造成储能变流器的效率降低。In this embodiment, the first DC power supply is compared with the first preset value and the second preset value, and then the operation mode of the first semiconductor component is controlled according to the comparison result, so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value, so that the current ripple of the inductor component is minimized, and the efficiency of the energy storage converter is prevented from being reduced due to the large current ripple of the inductor component.
在一个具体实施例中，如图6所示，首先，根据需要输出的交流电压值计算第四电容的电压值Uc4的参考值为Udcmin，若Uc4过高，则器件导通或关断时刻的电压值尖峰可能会导致器件损坏，因此交流变换器模块对Uc4的最高值限制为Udcmax。该值通常是根据实验测试或经验判断得到。In a specific embodiment, as shown in FIG6 , first, the reference value of the voltage value Uc4 of the fourth capacitor is calculated as Udcmin according to the AC voltage value to be output. If Uc4 is too high, the voltage value spike at the time of device on or off may cause device damage. Therefore, the AC converter module limits the maximum value of Uc4 to Udcmax. This value is usually obtained based on experimental tests or experience.
判断第一直流电源的电压值Ubat与Udcmax和Udcmin的关系。若Udcmin<0.5Ubat<Udcmax，则占空比固定为0.5。否则若0.5Ubat<Udcmin，可以设置电容C4电压值Uc4的参考值Uc4*为Udcmin，使直流变换器模块在工作模式1中进行闭环控制；否则若Udcmax<0.5Ubat，可以根据变流器整体效率考虑设置电容C4电压值Uc4的参考值，使直流变换器模块在工作模式2中进行闭环控制。Determine the relationship between the voltage value Ubat of the first DC power supply and Udcmax and Udcmin. If Udcmin<0.5Ubat<Udcmax, the duty cycle is fixed to 0.5. Otherwise, if 0.5Ubat<Udcmin, the reference valueUc4 * of the voltage valueUc4 of capacitorC4 can be set to Udcmin, so that the DC converter module performs closed-loop control in working mode 1; otherwise, if Udcmax<0.5Ubat, the reference value of the voltage valueUc4 of capacitorC4 can be set according to the overall efficiency of the converter, so that the DC converter module performs closed-loop control in working mode 2.
在一些实施例中，可选地，如图4所示，提供了一种储能变流器的控制方法，控制第一半导体组件，以使第一电容的电压值、第二电容的电压值和第六电容的电压值相等，包括：In some embodiments, optionally, as shown in FIG. 4 , a control method for an energy storage converter is provided, which controls the first semiconductor component so that the voltage value of the first capacitor, the voltage value of the second capacitor, and the voltage value of the sixth capacitor are equal, including:
步骤402，根据储能变流器的目标输出电压值，确定第一预设值；Step 402, determining a first preset value according to a target output voltage value of the energy storage converter;
步骤404，根据交流变换器模块的运行参数，确定第二预设值；Step 404, determining a second preset value according to the operating parameters of the AC converter module;
步骤406，控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值；Step 406, controlling the first semiconductor component so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value;
步骤408，获取第三电容的电压值；Step 408, obtaining a voltage value of the third capacitor;
步骤410，控制第一半导体组件，以使第三电容的电压值为第三预设值。Step 410: Control the first semiconductor component so that the voltage value of the third capacitor is a third preset value.
在该实施例中，还可以获取第三电容的电压值，然后控制第一半导体组件，以使第三电容的电压值为第三预设值。In this embodiment, the voltage value of the third capacitor may also be obtained, and then the first semiconductor component may be controlled so that the voltage value of the third capacitor is a third preset value.
具体地，在第三电容的电压值大于第三预设值，且电感组件的电流平均值大于0的情况下，减少第一半导体器件和第三半导体器件的导通时长，增加第二半导体器件和第四半导体器件的导通时长，以使第三电容的电压值等于第三预设值；Specifically, when the voltage value of the third capacitor is greater than the third preset value and the average current value of the inductor component is greater than 0, the conduction time of the first semiconductor device and the third semiconductor device is reduced, and the conduction time of the second semiconductor device and the fourth semiconductor device is increased, so that the voltage value of the third capacitor is equal to the third preset value;
在第三电容的电压值大于第三预设值，且电感组件的电流平均值大于0的情况下，增加第一半导体器件和第三半导体器件的导通时长，减少第二半导体器件和第四半导体器件的导通时长，以使第三电容的电压值等于第三预设值；When the voltage value of the third capacitor is greater than the third preset value and the average current value of the inductor component is greater than 0, the on-time of the first semiconductor device and the third semiconductor device is increased, and the on-time of the second semiconductor device and the fourth semiconductor device is reduced, so that the voltage value of the third capacitor is equal to the third preset value;
在第三电容的电压值小于第三预设值，且电感组件的电流平均值大于0的情况下，增加第一半导体器件和第三半导体器件的导通时长，减少第二半导体器件和第四半导体器件的导通时长，以使第三电容的电压值等于第三预设值；When the voltage value of the third capacitor is less than the third preset value and the average current value of the inductor component is greater than 0, the conduction time of the first semiconductor device and the third semiconductor device is increased, and the conduction time of the second semiconductor device and the fourth semiconductor device is reduced, so that the voltage value of the third capacitor is equal to the third preset value;
在第三电容的电压值小于第三预设值，且电感组件的电流平均值大于0的情况下，减少第一半导体器件和第三半导体器件的导通时长，增加第二半导体器件和第四半导体器件的导通时长，以使第三电容的电压值等于第三预设值；When the voltage value of the third capacitor is less than the third preset value and the average current value of the inductor component is greater than 0, the conduction time of the first semiconductor device and the third semiconductor device is reduced, and the conduction time of the second semiconductor device and the fourth semiconductor device is increased, so that the voltage value of the third capacitor is equal to the third preset value;
本实施例中的储能变流器通过调整第一半导体器件、第二半导体器件、第三半导体器件和第四半导体器件的导通时长，以使第三电容的电压值为第三预设值，实现了储能变流器的电压值平衡，进而保证了储能变流器的安全运行。The energy storage inverter in this embodiment adjusts the conduction time of the first semiconductor device, the second semiconductor device, the third semiconductor device and the fourth semiconductor device so that the voltage value of the third capacitor is a third preset value, thereby achieving voltage balance of the energy storage inverter and ensuring the safe operation of the energy storage inverter.
在一个具体实施中，如图11所示，首先获取第三电容C3的电压值Uc3，并且设置C3电压值的参考值，也就是第三预设值Uc3*。然后，判断Uc3与Uc3*之间的关系。同时，判断电感组件的平均电流ILave是否大于0。若Uc3大于Uc3*且ILave大于零，则减少第一半导体器件和第三半导体器件同时导通的时间，相应增加S2和S4同时导通的时间；若Uc3大于Uc3*且ILave小于零，则增加第一半导体器件和第三半导体器件同时导通的时间，相应减少第二半导体器件和第四半导体器件同时导通的时间；若Uc3小于Uc3*且ILave大于零，则增加第一半导体器件和第三半导体器件同时导通的时间，相应减少第二半导体器件和第四半导体器件同时导通的时间；若Uc3小于Uc3*且ILave小于零，则减少第一半导体器件和第三半导体器件同时导通的时间，相应增加第二半导体器件和第四半导体器件同时导通的时间。In a specific implementation, as shown in FIG11 , firstly, the voltage value Uc3 of the third capacitor C3 is obtained, and a reference value of the voltage value of C3 , that is, a third preset value Uc3 *, is set. Then, the relationship between Uc3 and Uc3 * is determined. At the same time, it is determined whether the average current ILave of the inductor component is greater than 0. If Uc3 is greater than Uc3 * and ILave is greater than zero, the time during which the first semiconductor device and the third semiconductor device are simultaneously turned on is reduced, and the time during which S2 and S4 are simultaneously turned on is correspondingly increased; if Uc3 is greater than If Uc3 * and ILave is less than zero, the time during which the first semiconductor device and the third semiconductor device are turned on at the same time is increased, and the time during which the second semiconductor device and the fourth semiconductor device are turned on at the same time is correspondingly reduced; if Uc3 is less than Uc3 * and ILave is greater than zero, the time during which the first semiconductor device and the third semiconductor device are turned on at the same time is increased, and the time during which the second semiconductor device and the fourth semiconductor device are turned on at the same time is correspondingly reduced; if Uc3 is less than Uc3 * and ILave is less than zero, the time during which the first semiconductor device and the third semiconductor device are turned on at the same time is reduced, and the time during which the second semiconductor device and the fourth semiconductor device are turned on at the same time is correspondingly increased.
具体地，减少和增加的时间△T可以通过闭环控制得到，闭环控制可以采用如图12所示的结构。参考值Uc3*和采样得到的Uc3相减，差值除以电感电流的平均值ILave，再经过平衡环BPI(s)得到△T。Specifically, the reduction and increase time △T can be obtained by closed-loop control, and the closed-loop control can adopt the structure shown in Figure 12. The reference value Uc3 * is subtracted from the sampled Uc3 , and the difference is divided by the average value of the inductor current ILave , and then △T is obtained through the balancing loop BPI(s).
在一些实施例中，可选地，如图5所示，提供了一种储能变流器的控制方法，包括：In some embodiments, optionally, as shown in FIG5 , a control method for an energy storage converter is provided, including:
步骤502，根据储能变流器的目标输出电压值，确定第一预设值；Step 502, determining a first preset value according to a target output voltage value of the energy storage converter;
步骤504，根据交流变换器模块的运行参数，确定第二预设值；Step 504, determining a second preset value according to the operating parameters of the AC converter module;
步骤506，控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值；Step 506, controlling the first semiconductor component so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value;
步骤508，获取第三电容的电压值；Step 508, obtaining a voltage value of the third capacitor;
步骤510，控制第一半导体组件，以使第三电容的电压值为第三预设值；Step 510, controlling the first semiconductor component so that the voltage value of the third capacitor is a third preset value;
步骤512，获取第一电容的电压值和第二电容的电压值；Step 512, obtaining a voltage value of the first capacitor and a voltage value of the second capacitor;
步骤514，控制储能变流器的中点平衡支路和第一半导体组件，以使第一电容的电压值和第二电容的电压值等于第四预设值。Step 514, controlling the midpoint balancing branch and the first semiconductor component of the energy storage converter so that the voltage value of the first capacitor and the voltage value of the second capacitor are equal to a fourth preset value.
在该实施例中，通过控制中点平衡支路和第一半导体组件，以使得第一电容的电压值和第二电容的电压值等于第四预设值，也就是使得第一电容的电压值等于第二电容的电压值。具体地，在第一电容的电压值和第二电容的电压值不相等，且第二电容的电压值小于第一直流电源的电压值与第三电容的电压值之差的情况下，也就是第一电容的电压值和第二电容的电压值不相等，且第一电容的电压值大于第二电容的电压值的情况下。控制中点平衡支路的支路开关闭合，以使支路电阻连接至第一半导体组件中。进一步地，在支路开关闭合之后，控制第一半导体器件导通，从而使得电流从第一半导体组件流入支路电阻，进而使得第一电容的电压值减小，第二电容的电压值增加，以使得第一电容的电压值等于第二电容的电压值。In this embodiment, by controlling the midpoint balancing branch and the first semiconductor component, the voltage value of the first capacitor and the voltage value of the second capacitor are equal to the fourth preset value, that is, the voltage value of the first capacitor is equal to the voltage value of the second capacitor. Specifically, when the voltage value of the first capacitor is not equal to the voltage value of the second capacitor, and the voltage value of the second capacitor is less than the difference between the voltage value of the first DC power supply and the voltage value of the third capacitor, that is, when the voltage value of the first capacitor is not equal to the voltage value of the second capacitor, and the voltage value of the first capacitor is greater than the voltage value of the second capacitor. The branch switch of the midpoint balancing branch is controlled to be closed so that the branch resistor is connected to the first semiconductor component. Further, after the branch switch is closed, the first semiconductor device is controlled to be turned on, so that the current flows from the first semiconductor component into the branch resistor, thereby reducing the voltage value of the first capacitor and increasing the voltage value of the second capacitor, so that the voltage value of the first capacitor is equal to the voltage value of the second capacitor.
在第一电容的电压值和第二电容的电压值不相等，且第一电容的电压值小于第一直流电源的电压值与第三电容的电压值之差的情况下，也就是第一电容的电压值和第二电容的电压值不相等，且第一电容的电压值小于第二电容的电压值的情况下。控制中点平衡支路的支路开关闭合，以使支路电阻连接至第一半导体组件中。进一步地，在支路开关闭合之后，控制第四半导体器件导通，从而使得电流从支路电阻流入第一半导体组件，进而使得第一电容的电压值增加，第二电容的电压值减小，以使得第一电容的电压值等于第二电容的电压值。When the voltage value of the first capacitor is not equal to the voltage value of the second capacitor, and the voltage value of the first capacitor is less than the difference between the voltage value of the first DC power supply and the voltage value of the third capacitor, that is, when the voltage value of the first capacitor is not equal to the voltage value of the second capacitor, and the voltage value of the first capacitor is less than the voltage value of the second capacitor. The branch switch of the midpoint balance branch is controlled to be closed so that the branch resistor is connected to the first semiconductor component. Further, after the branch switch is closed, the fourth semiconductor device is controlled to be turned on so that the current flows from the branch resistor into the first semiconductor component, thereby increasing the voltage value of the first capacitor and reducing the voltage value of the second capacitor, so that the voltage value of the first capacitor is equal to the voltage value of the second capacitor.
本实施例中的储能变流器通过控制中点平衡支路的支路开关的开启或关闭，同时配合第一半导体器件和第四半导体器件的导通，从而实现了将支路电阻连接至第一半导体组件中，进而实现了对第一电容的电压值和第二电容的电压值的调整，以使第一电容的电压值等于第二电容的电压值，实现了储能变流器的电压值平衡，进而保证了储能变流器的安全运行。The energy storage converter in this embodiment controls the opening or closing of the branch switch of the midpoint balancing branch and cooperates with The conduction of the first semiconductor device and the fourth semiconductor device realizes the connection of the branch resistor to the first semiconductor component, thereby realizing the adjustment of the voltage value of the first capacitor and the voltage value of the second capacitor, so that the voltage value of the first capacitor is equal to the voltage value of the second capacitor, achieving the voltage value balance of the energy storage inverter, and thus ensuring the safe operation of the energy storage inverter.
在一个具体实施例中，如图13所示，首先可以设置第一电容的电压值Uc1与第二电容的电压值Uc2之间的电压偏差上限△Umax。然后计算Uc1与Uc2之差的绝对值，判断与Umax的关系。若|Uc1-Uc2|大于Umax，则闭合支路开关K1；否则断开K1。In a specific embodiment, as shown in FIG13 , the voltage deviation upper limit △Umax between the voltage valueUc1 of the first capacitor and the voltage value Uc2 of the second capacitor can be set first. Then the absolute value of the difference between Uc1 and Uc2 is calculated to determine the relationship with Umax. If |Uc1-Uc2| is greater than Umax, the branch switch K1 is closed; otherwise, K1 is disconnected.
进一步地，为了避免K1频繁的动作，也可以采用以下方式进行K1的控制，如图14所示：Furthermore, in order to avoid frequent actions of K1, the following method can also be used to controlK1 , as shown in FIG14:
首先，设置两个阈值电压△Uth1和△Uth2，且△Uth1<△Uth2。判断K1的状态。计算Uc1与Uc2之差的绝对值，判断与△Uth1以及△Uth2的关系。若K1已经闭合且|Uc1-Uc2|小于△Uth1，则断开K1；若K1已经闭合且|Uc1-Uc2|大于△Uth1，则K1保持闭合；若K1已经断开且|Uc1-Uc2|大于△Uth2，则闭合K1；若K1已经断开且|Uc1-Uc2|小于△Uth2，则K1保持断开。First, set two threshold voltages △Uth1 and △Uth2, and △Uth1<△Uth2. Determine the state of K1. Calculate the absolute value of the difference between Uc1 and Uc2, and determine the relationship with △Uth1 and △Uth2. If K1 is already closed and |Uc1-Uc2| is less than △Uth1, then disconnect K1; if K1 is already closed and |Uc1-Uc2| is greater than △Uth1, then K1 remains closed; if K1 is already disconnected and |Uc1-Uc2| is greater than △Uth2, then close K1; if K1 is already disconnected and |Uc1-Uc2| is less than △Uth2, then K1 remains disconnected.
如图15所示，本申请的实施例中提供了一种储能变流器的控制装置1500，包括：As shown in FIG. 15 , an embodiment of the present application provides a control device 1500 for an energy storage converter, including:
获取模块1502，用于根据储能变流器的目标输出电压值，获取第一预设值；以及根据交流变换器模块的运行参数，确定第二预设值；The acquisition module 1502 is used to acquire a first preset value according to a target output voltage value of the energy storage converter; and determine a second preset value according to an operating parameter of the AC converter module;
控制模块1504，用于控制第一半导体组件，以使第四电容的电压值大于第一预设值且小于第二预设值。The control module 1504 is used to control the first semiconductor component so that the voltage value of the fourth capacitor is greater than the first preset value and less than the second preset value.
在该实施例中，提供了一种储能变流器的控制装置1500，储能变流器为上述任一实施例中的储能变流器，储能变流器与第一直流电源连接。In this embodiment, a control device 1500 for an energy storage converter is provided. The energy storage converter is the energy storage converter in any of the above embodiments. The energy storage converter is connected to a first DC power supply.
本实施例中的储能变流器的控制装置，可以在高直流电压值、低交流电压值场合的运行过程中，调节第四电容的电压值从而使得第四电容的电压值保持在第一预设值至第二预设值之间，进而使得电感组件的电流波纹最小，避免电感组件的电流波纹较大而造成储能变流器的效率降低。The control device of the energy storage inverter in this embodiment can adjust the voltage value of the fourth capacitor during operation in the case of high DC voltage value and low AC voltage value so that the voltage value of the fourth capacitor is maintained between the first preset value and the second preset value, thereby minimizing the current ripple of the inductor component and avoiding the current ripple of the inductor component being large and causing the efficiency of the energy storage inverter to be reduced.
在一些实施例中，可选地，如图16所示，提出了一种储能变流器的控制装置1600，储能变流器的控制装置1600包括处理器1602和存储器1604，存储器1604中存储有程序或指令，该程序或指令被处理器1602执行时实现如上述任一技术方案中的储能变流器的控制方法的步骤。因此，该储能变流器的控制装置1600具备上述任一技术方案中的储能变流器的控制方法的全部有益效果，在此不再赘述。In some embodiments, optionally, as shown in FIG16 , a control device 1600 for an energy storage converter is proposed, and the control device 1600 for the energy storage converter includes a processor 1602 and a memory 1604, wherein the memory 1604 stores a program or instruction, and when the program or instruction is executed by the processor 1602, the steps of the control method for the energy storage converter in any of the above technical solutions are implemented. Therefore, the control device 1600 for the energy storage converter has all the beneficial effects of the control method for the energy storage converter in any of the above technical solutions, which will not be described in detail here.
在一些实施例中，可选地，提供了一种可读存储介质，其上存储有程序，程序被处理器执行时实现如上述任一实施例中的储能变流器的控制方法，因而具有上述任一实施例中的储能变流器的控制方法的全部有益技术效果。In some embodiments, optionally, a readable storage medium is provided on which a program is stored. When the program is executed by a processor, the control method of the energy storage inverter in any of the above embodiments is implemented, thereby having all the beneficial technical effects of the control method of the energy storage inverter in any of the above embodiments.
所述方法可根据特定的特征和/或示例应用而采用各种不同的方式进行实施。例如，这些方法可以通过硬件、固件以及/或软件的组合来实施。例如，在硬件实施中，处理器可以在一个或多个应用专用集成电路(ASIC)、数字信号处理器(DSP)、数字信号处理设备(DSPD)、可编程逻辑器件(PLD)、现场可编程门阵列(FPGA)、控制器、微控制器、微处理器、电子设备、其他用于执行上述功能的设备单元和/或它们的组合中实现。The methods may be implemented in a variety of different ways depending on the specific features and/or example applications. For example, the methods may be implemented by a combination of hardware, firmware, and/or software. For example, in a hardware implementation, a processor may The method may be implemented in one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, electronic devices, other device units for performing the above functions, and/or combinations thereof.
计算机可读存储介质可以是一种有形设备，它可以保留和存储供指令执行设备使用的指令。计算机可读存储介质可以是电子存储设备、磁存储设备、光学存储设备、电磁存储设备、半导体存储设备或者上述设备的任何适当组合，但不限于此。计算机可读存储介质的更具体示例的非详尽列表包括：便携式计算机软盘、硬盘、随机存取存储器(RAM)、只读存储器(ROM)、可擦写可编程只读存储器(EPROM或闪存)、静态随机存取存储器(SRAM)、便携式光盘只读存储器(CD-ROM)、数字化通用磁盘(DVD)、存储卡、软盘、编码机械设备(例如穿孔卡片或具有记录有指令的凸起结构的凹槽)以及上述设备的任何适当组合。此处使用的计算机可读存储介质并不应被理解为传输信号本身，例如无线电波或其他自由传播的电磁波、通过波导或其他传输媒体传播的电磁波，或通过电线传输的电信号等。A computer readable storage medium may be a tangible device that can retain and store instructions for use by an instruction execution device. A computer readable storage medium may be an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the above devices, but is not limited thereto. A non-exhaustive list of more specific examples of computer readable storage media includes: portable computer floppy disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disk read-only memory (CD-ROM), digital versatile disk (DVD), memory card, floppy disk, encoding mechanical device (such as a punch card or a groove with a raised structure with instructions recorded) and any suitable combination of the above devices. The computer readable storage medium used herein should not be understood as a transmission signal itself, such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagating through a waveguide or other transmission medium, or an electrical signal transmitted through a wire, etc.
需要明确的是，在本申请的权利要求书、说明书和说明书附图中，术语“多个”则指两个或两个以上，除非有额外的明确限定，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了更方便地描述本申请和使得描述过程更加简便，而不是为了指示或暗示所指的装置或元件必须具有所描述的特定方位、以特定方位构造和操作，因此这些描述不能理解为对本申请的限制；术语“连接”、“安装”、“固定”等均应做广义理解，举例来说，“连接”可以是多个对象之间的固定连接，也可以是多个对象之间的可拆卸连接，或一体地连接；可以是多个对象之间的直接相连，也可以是多个对象之间的通过中间媒介间接相连。对于本领域的普通技术人员而言，可以根据上述数据地具体情况理解上述术语在本申请中的具体含义。It should be clarified that in the claims, specification and drawings of the present application, the term "multiple" refers to two or more than two. Unless otherwise clearly defined, the orientation or position relationship indicated by the terms "upper" and "lower" is based on the orientation or position relationship shown in the drawings, which is only for the purpose of more conveniently describing the present application and making the description process easier, rather than indicating or implying that the device or element referred to must have the specific orientation described, be constructed and operated in a specific orientation, so these descriptions cannot be understood as limitations on the present application; the terms "connect", "install", "fix" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection between multiple objects, or a detachable connection between multiple objects, or an integral connection; it can be a direct connection between multiple objects, or an indirect connection between multiple objects through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood based on the specific circumstances of the above data.
在本申请的权利要求书、说明书和说明书附图中，术语“一个实施例”、“一些实施例”、“具体实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或特点包含于本申请的至少一个实施例或示例中。在本申请的权利要求书、说明书和说明书附图中，对上述术语的示意性表述不一定指的是相同的实施例或实例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the claims, specification and drawings of the present application, the description of the terms "one embodiment", "some embodiments", "specific embodiments" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the claims, specification and drawings of the present application, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
以上仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311574597.6ACN117318475B (en) | 2023-11-23 | 2023-11-23 | Energy storage converter, control method and device thereof and readable storage medium |
| CN202311574597.6 | 2023-11-23 |
| Publication Number | Publication Date |
|---|---|
| WO2025107359A1true WO2025107359A1 (en) | 2025-05-30 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2023/136486PendingWO2025107359A1 (en) | 2023-11-23 | 2023-12-05 | Power conversion system and control method and device therefor, and readable storage medium |
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