本申请要求于2023年09月06日提交中国专利局、申请号为202311149707.4、发明名称为“一种介电质窗口及半导体设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed with the China Patent Office on September 6, 2023, with application number 202311149707.4 and invention name “A dielectric window and semiconductor device”, the entire contents of which are incorporated by reference in this application.
本发明涉及半导体设备技术领域，更为具体地说，涉及一种介电质窗口及半导体设备。The present invention relates to the technical field of semiconductor devices, and more specifically, to a dielectric window and a semiconductor device.
在电感耦合等离子体(inductive coupled plasma，或着简称ICP)反应腔中，通过陶瓷窗口或着称为介电质窗口背面的电感天线的电磁耦合震荡，穿透陶瓷窗口激发反应腔内的反应气体形成等离子体，实现对晶圆进行等离子体刻蚀的目的。在等离子体蚀刻系统中，陶瓷窗口是反应腔和电感天线之间的关键部件和隔离界面。带有电感天线的陶瓷窗口与气体喷嘴结合，形成等离子体刻蚀设备的反应腔中的上电极，同时也作为气体分配板而具有输送反应气体进入反应腔的功能。通常，陶瓷窗口由高纯度氧化铝板制成，具有坚硬和结构稳定的特性。并且，陶瓷窗口与反应腔相接触的表面涂覆有耐等离子体刻蚀的涂层，如Y2O3、YF3，等，以防止或减弱等离子体对陶瓷窗口表面的刻蚀，降低或消除由此引发的对反应腔造成污染的问题。在等离子体刻蚀工艺中，需要对陶瓷窗口进行加热实现更稳定的工艺过程，但是现有陶瓷窗口是通过在陶瓷窗口背面设置的加热器来实现对陶瓷窗口的加热。由于陶瓷窗口的厚度往往超过25毫米，通过陶瓷窗口背面加热器来实现对陶瓷窗口的另外一个工作表面的加热，有加热效率较低而且温度分布不均匀等性能缺陷。由于陶瓷窗口表面的不均匀温度分布，会导致等离子体刻蚀过程诱发在陶瓷窗口表面的不均匀Polymer沉积，从而引起微量元素或颗粒污染，降低刻蚀过程的生产良率。In an inductively coupled plasma (ICP) reaction chamber, the electromagnetic coupling oscillation of the ceramic window or the inductive antenna on the back of the dielectric window penetrates the ceramic window to excite the reaction gas in the reaction chamber to form plasma, thereby achieving the purpose of plasma etching of the wafer. In a plasma etching system, the ceramic window is a key component and an isolation interface between the reaction chamber and the inductive antenna. The ceramic window with the inductive antenna is combined with a gas nozzle to form an upper electrode in the reaction chamber of the plasma etching equipment, and also serves as a gas distribution plate to transport the reaction gas into the reaction chamber. Generally, the ceramic window is made of a high-purity alumina plate, which has the characteristics of hardness and structural stability. In addition, the surface of the ceramic window in contact with the reaction chamber is coated with aplasma etching resistant coating, such asY2O3 ,YF3 , etc., to prevent or weaken the etching of the ceramic window surface by the plasma, and reduce or eliminate the problem of contamination of the reaction chamber caused by the plasma. In the plasma etching process, the ceramic window needs to be heated to achieve a more stable process, but the existing ceramic window is heated by a heater set on the back of the ceramic window. Since the thickness of the ceramic window is often more than 25 mm The other working surface of the ceramic window is heated by the back heater of the ceramic window, which has performance defects such as low heating efficiency and uneven temperature distribution. Due to the uneven temperature distribution on the surface of the ceramic window, the plasma etching process will induce uneven polymer deposition on the surface of the ceramic window, thereby causing trace element or particle contamination and reducing the production yield of the etching process.
发明内容Summary of the invention
有鉴于此，本发明提供了一种介电质窗口及半导体设备，有效解决现有存在的技术问题，不仅能够提高对介电质窗口的加热效率，而且能够显著改善介电质窗口表面的温度分布均匀性，从而在提高了等离子体刻蚀工艺的稳定性的同时，还避免了在介电质窗口加热不均匀过程中所引起的对反应腔造成颗粒污染和微量元素污染的问题。In view of this, the present invention provides a dielectric window and a semiconductor device, which effectively solve the existing technical problems. Not only can the heating efficiency of the dielectric window be improved, but also the uniformity of temperature distribution on the surface of the dielectric window can be significantly improved, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by the uneven heating of the dielectric window.
为实现上述目的，本发明提供的技术方案如下：To achieve the above purpose, the technical solution provided by the present invention is as follows:
一种介电质窗口，应用于半导体设备，包括：A dielectric window, applied to a semiconductor device, comprising:
介电质层，所述介电质层包括贯穿所述介电质层的开孔；a dielectric layer, the dielectric layer comprising an opening extending through the dielectric layer;
第一加热组件，所述第一加热组件嵌入所述介电质层内，且所述第一加热组件环绕所述开孔设置。The first heating component is embedded in the dielectric layer and is disposed around the opening.
可选的，所述介电质窗口还包括：Optionally, the dielectric window further includes:
第二加热组件至第N加热组件，第i加热组件嵌入所述介电质层内，且所述第i加热组件环绕第i-1加热组件设置，N为大于1的整数，i为大于1且不大于N的整数。From the second heating element to the Nth heating element, the i-th heating element is embedded in the dielectric layer, and the i-th heating element is arranged around the i-1th heating element, N is an integer greater than 1, and i is an integer greater than 1 and not greater than N.
可选的，在垂直所述介电质层所在面的方向上，且在所述第一加热组件至所述第N加热组件中，不同加热组件至同一平面的间距不同。Optionally, in a direction perpendicular to the surface where the dielectric layer is located, and among the first heating component to the Nth heating component, the distances between different heating components and the same plane are different.
可选的，所述介电质层包括朝向所述半导体设备的反应腔的加热面；Optionally, the dielectric layer comprises a heating surface facing the reaction chamber of the semiconductor device;
第j加热组件与所述加热面之间的间距，大于第j+1加热组件与所述加热面之间的间距，j为不小于1且小于N的整数。The distance between the jth heating component and the heating surface is greater than the distance between the j+1th heating component and the heating surface, and j is an integer not less than 1 and less than N.
可选的，所述介电质层包括第一子介电质层至第N+1子介电质层，第j加热组件位于第j子介电质层与第j+1子介电质层之间，j为不小于1且小于N的整数。Optionally, the dielectric layer includes a first sub-dielectric layer to an N+1th sub-dielectric layer, the jth heating component is located between the jth sub-dielectric layer and the j+1th sub-dielectric layer, and j is an integer not less than 1 and less than N.
可选的，所述第j子介电质层或所述第j+1子介电质层包括凹槽，所述第j加热组件位于所述凹槽中。Optionally, the jth dielectric sub-layer or the j+1th dielectric sub-layer comprises a groove, and the jth heating component is located in the groove.
可选的，在所述第一子介电质层至第N+1子介电质层中，所有子介电质层的材质相同；Optionally, in the first sub-dielectric layer to the N+1th sub-dielectric layer, all sub-dielectric layers are made of the same material;
或者，在所述第一子介电质层至第N+1子介电质层中，至少一个子介电质层的材质与其他子介电质层的材质不同。Alternatively, among the first to N+1th sub-dielectric layers, a material of at least one sub-dielectric layer is different from that of the other sub-dielectric layers.
可选的，在所述第一子介电质层至第N+1子介电质层中，任意一子介电质层的材质包括Al2O3、YAG、YOF和Y2O3中至少一种。Optionally, in the first to N+1th sub-dielectric layers, the material of any sub-dielectric layer includes at least one of Al2 O3 , YAG, YOF and Y2 O3 .
可选的，所述第一加热组件至所述第N加热组件的至少一个加热组件包括加热线。Optionally, at least one of the first heating component to the Nth heating component includes a heating wire.
可选的，所述加热线的材质为金属、合金或陶瓷；Optionally, the heating wire is made of metal, alloy or ceramic;
或者，所述加热线包括第一导电层、位于所述第一导电层上的导电芯层和覆盖所述导电芯层的第二导电层，所述第一导电层和所述第二导电层的材质的耐高温氧化能力大于所述导电芯层的材质的耐高温氧化能力。Alternatively, the heating line includes a first conductive layer, a conductive core layer located on the first conductive layer, and a second conductive layer covering the conductive core layer, and the high temperature oxidation resistance of the materials of the first conductive layer and the second conductive layer is greater than the high temperature oxidation resistance of the material of the conductive core layer.
可选的，所述介电质窗口还包括：Optionally, the dielectric window further includes:
第一接线端至第N接线端，所述第k接线端与第k加热组件相连，其中，所述第k接线端嵌入介电质层内，且所述第k接线端包括裸露所述介电质层外的部分，k为不小于1且不大于N的整数。The first terminal to the Nth terminal, the kth terminal is connected to the kth heating component, wherein, The kth terminal is embedded in the dielectric layer, and the kth terminal includes a portion exposed outside the dielectric layer, and k is an integer not less than 1 and not greater than N.
可选的，所述第k接线端包括：Optionally, the kth terminal includes:
连接线和外接引脚，所述连接线嵌入所述介电质层内与所述第k加热组件相连，且所述连接线背离其与所述第k加热组件连接端一侧包括填充槽；所述外接引脚填充于所述填充槽内，且所述外接引脚裸露所述介电质层外。A connecting wire and an external pin, wherein the connecting wire is embedded in the dielectric layer and connected to the kth heating component, and the connecting wire includes a filling groove on the side away from the connection end with the kth heating component; the external pin is filled in the filling groove, and the external pin is exposed outside the dielectric layer.
可选的，所述连接线的材质的耐高温氧化能力大于所述外接引脚的材质的耐高温氧化能力；Optionally, the high temperature oxidation resistance of the material of the connecting wire is greater than the high temperature oxidation resistance of the material of the external pin;
及所述连接线的材质的电阻大于所述外接引脚的材质的电阻。And the resistance of the material of the connecting wire is greater than the resistance of the material of the external pin.
可选的，所述介电质层包括朝向所述半导体设备的反应腔的加热面，其中，所述介电质窗口还包括：Optionally, the dielectric layer includes a heating surface facing the reaction chamber of the semiconductor device, wherein the dielectric window further includes:
覆盖所述加热面的致密薄膜。A dense film covers the heating surface.
可选的，所述致密薄膜的厚度范围为0.1-500μm。Optionally, the thickness of the dense film ranges from 0.1 to 500 μm.
可选的，所述介电质窗口还包括：Optionally, the dielectric window further includes:
包覆所述介电质层的裸露表面的保护膜，其中，所述致密薄膜位于所述介电质层的加热面一侧，且所述致密薄膜位于所述保护膜背离所述加热面一侧。A protective film covering the exposed surface of the dielectric layer, wherein the dense film is located on one side of the heating surface of the dielectric layer, and the dense film is located on a side of the protective film away from the heating surface.
可选的，所述保护膜的厚度范围为为0.1-500μm。Optionally, the protective film has a thickness ranging from 0.1 to 500 μm.
可选的，所述保护膜包括：Optionally, the protective film includes:
依次形成的多个子保护膜，其中，在所述多个子保护膜中，初始的所述子保护膜包覆所述介质层的裸露表面，且后一所述子保护膜包覆前一所述子保护膜的裸露表面。A plurality of sub-protective films are formed sequentially, wherein, among the plurality of sub-protective films, the initial sub-protective film covers the exposed surface of the dielectric layer, and the subsequent sub-protective film covers the exposed surface of the previous sub-protective film.
可选的，所述保护膜包括：Optionally, the protective film includes:
依次形成的非晶态氧化铝子保护膜和氧化钇子保护膜；An amorphous aluminum oxide sub-protective film and an yttrium oxide sub-protective film are formed in sequence;
或者，依次形成的非晶态氧化铝子保护膜、晶态氧化铝子保护膜和氧化钇子保护膜。Alternatively, an amorphous aluminum oxide sub-protective film, a crystalline aluminum oxide sub-protective film and a yttrium oxide sub-protective film are formed in sequence.
可选的，所述保护膜和所述致密薄膜中任意一个的材质包括：Al2O3、Y2O3、YF3、YOF、ZrO2、Er2O3、SiC、SiO2、HfO2、Si3N4、AlN、B2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3、YAG、EAG、YAM、YAP、EAM、EAP中至少一种。Optionally, the material of any one of the protective film and the dense film includes atleast one ofAl2O3 ,Y2O3 ,YF3 , YOF,ZrO2 ,Er2O3 , SiC,SiO2 ,HfO2, Si3N4,AlN ,B2O3 ,Nd2O3 ,Nb2O5 ,CeO2 , Sm2O3,Yb2O3 , YAG,EAG ,YAM ,YAP ,EAM,and EAP.
相应的，本发明还提供了一种半导体设备，所述半导体设备包括上述的介电质窗口。Correspondingly, the present invention further provides a semiconductor device, which includes the above-mentioned dielectric window.
可选的，所述半导体设备为等离子体刻蚀设备。Optionally, the semiconductor device is a plasma etching device.
相较于现有技术，本发明提供的技术方案至少具有以下优点：Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:
本发明提供了一种介电质窗口及半导体设备，包括：介电质层，所述介电质层包括贯穿所述介电质层的开孔；第一加热组件，所述第一加热组件嵌入所述介电质层内，且所述第一加热组件环绕所述开孔设置。可见，本发明提供的技术方案，将第一加热组件嵌入在介电质层内部，进而在对第一加热组件进行上电后，控制介电质层自内向外加热，不仅能够提高对介电质窗口的加热效率，而且通过将第一加热组件呈环绕开孔设置，能够显著改善介电质窗口表面的温度分布均匀性，从而在提高了等离子体刻蚀工艺的稳定性的同时，还避免了对介电质窗口加热不均匀所引起的对反应腔造成颗粒污染和微量元素污染的问题。The present invention provides a dielectric window and semiconductor equipment, including: a dielectric layer, the dielectric layer including an opening penetrating the dielectric layer; a first heating component, the first heating component is embedded in the dielectric layer, and the first heating component is arranged around the opening. It can be seen that the technical solution provided by the present invention embeds the first heating component inside the dielectric layer, and then after the first heating component is powered on, the dielectric layer is controlled to be heated from the inside to the outside, which can not only improve the heating efficiency of the dielectric window, but also significantly improve the uniformity of the temperature distribution on the surface of the dielectric window by arranging the first heating component around the opening, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.
图1为本发明实施例提供的一种介电质窗口的结构示意图；FIG1 is a schematic structural diagram of a dielectric window provided by an embodiment of the present invention;
图2为图1中沿AA’方向的切面图；FIG2 is a cross-sectional view along the AA' direction in FIG1;
图3为本发明实施例提供的另一种介电质窗口的结构示意图；FIG3 is a schematic structural diagram of another dielectric window provided by an embodiment of the present invention;
图4为本发明实施例提供的又一种介电质窗口的结构示意图；FIG4 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图5为本发明实施例提供的又一种介电质窗口的结构示意图；FIG5 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图6为本发明实施例提供的又一种介电质窗口的结构示意图；FIG6 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图7为本发明实施例提供的又一种介电质窗口的结构示意图；FIG7 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图8为本发明实施例提供的又一种介电质窗口的结构示意图；FIG8 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图9为本发明实施例提供的又一种介电质窗口的结构示意图；FIG9 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention;
图10为本发明实施例提供的又一种介电质窗口的结构示意图。FIG. 10 is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention.
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
正如背景技术所述，在等离子体刻蚀工艺中，需要对陶瓷窗口进行加热实现更稳定的工艺过程，但是现有对陶瓷窗口的加热效率较低。As described in the background art, in the plasma etching process, the ceramic window needs to be heated to achieve a more stable process, but the existing heating efficiency of the ceramic window is low.
基于此，本发明实施例提供了一种介电质窗口及半导体设备，有效解决现有存在的技术问题，不仅能够提高对介电质窗口的加热效率，而且能够显著改善介电质窗口表面的温度分布均匀性，从而在提高了等离子体刻蚀工艺的稳定性的同时，还避免了对介电质窗口加热不均匀所引起的对反应腔造成颗粒污染和微量元素污染的问题。Based on this, an embodiment of the present invention provides a dielectric window and a semiconductor device, which effectively solve the existing technical problems. It can not only improve the heating efficiency of the dielectric window, but also significantly improve the temperature distribution uniformity on the surface of the dielectric window, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.
为实现上述目的，本发明实施例提供的技术方案如下，具体结合图1至图10对本发明实施例提供的技术方案进行详细的描述。To achieve the above objectives, the technical solution provided by the embodiment of the present invention is as follows, and the technical solution provided by the embodiment of the present invention is described in detail with reference to FIGS. 1 to 10 .
结合图1和图2所示，图1为本发明实施例提供的一种介电质窗口的结构示意图，图2为图1中沿AA’方向的切面图。其中，介电质窗口应用于半导体设备，介电质窗口包括：As shown in FIG. 1 and FIG. 2 , FIG. 1 is a schematic diagram of the structure of a dielectric window provided by an embodiment of the present invention, and FIG. 2 is a cross-sectional view along the AA’ direction in FIG. 1 . The dielectric window is applied to a semiconductor device, and the dielectric window includes:
介电质层100，所述介电质层100包括贯穿所述介电质层的开孔110。The dielectric layer 100 includes an opening 110 penetrating the dielectric layer.
第一加热组件201，所述第一加热组件201嵌入所述介电质层100内，且所述第一加热组件201环绕所述开孔110设置，其中，第一加热组件201的开口处用于接入电源。The first heating component 201 is embedded in the dielectric layer 100 and is disposed around the opening 110 , wherein the opening of the first heating component 201 is used to connect to a power source.
需要说明的是，本发明实施例提供的半导体设备包括有电感天线和反应腔，电感天线用于产生电磁耦合震荡，反应腔用于对基片进行等离子处理。介电质窗口设置于电感天线和反应腔之间以将两者隔离。介电质窗口中设置有一开孔，开孔与半导体设备的气体喷嘴相连通。此外，半导体设备还包括有静电吸盘等组成结构，对此与现有技术相同，故不做多余赘述。It should be noted that the semiconductor device provided in the embodiment of the present invention includes an inductive antenna and a reaction chamber, the inductive antenna is used to generate electromagnetic coupling oscillation, and the reaction chamber is used to perform plasma treatment on the substrate. A dielectric window is arranged between the inductive antenna and the reaction chamber to isolate the two. An opening is arranged in the dielectric window, and the opening is connected to the gas nozzle of the semiconductor device. In addition, the semiconductor device also includes a component structure such as an electrostatic chuck, which is the same as the prior art, so no unnecessary elaboration is made.
可以理解的，本发明实施例提供的技术方案，将第一加热组件嵌入在介电质层内部，进而在对第一加热组件进行上电后，控制介电质层自内向外加热，不仅能够提高对介电质窗口的加热效率，而且通过将第一加热组件呈环绕开孔设置，并优化第一加热组件和开孔之间间距后，能够显著改善介电质窗口表面的温度分布均匀性，从而在提高了等离子体刻蚀工艺的稳定性的同时，还避免了对介电质窗口加热不均匀所引起的对反应腔造成颗粒污染和微量元素污染的问题。It can be understood that the technical solution provided by the embodiment of the present invention embeds the first heating component inside the dielectric layer, and then controls the dielectric layer to heat from the inside to the outside after the first heating component is powered on, which can not only improve the heating efficiency of the dielectric window, but also improve the heating efficiency of the dielectric window by surrounding the opening with the first heating component. After setting and optimizing the distance between the first heating component and the opening, the uniformity of temperature distribution on the surface of the dielectric window can be significantly improved, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.
为了进一步提高介电质窗口的加热效率，同时提高介电质窗口各个区域的加热均匀性，本发明实施例提供的介电质窗口还可以包括更多的加热组件。参考图3所示，为本发明实施例提供的另一种介电质窗口的结构示意图，需要说明的是，下面附图均以介电质窗口包括第一加热组件201和第二加热组件202为例进行说明。其中，所述介电质窗口还包括：In order to further improve the heating efficiency of the dielectric window and improve the heating uniformity of each area of the dielectric window, the dielectric window provided in the embodiment of the present invention may also include more heating components. Referring to FIG3, a schematic diagram of the structure of another dielectric window provided in the embodiment of the present invention is shown. It should be noted that the following figures are all described by taking the dielectric window including the first heating component 201 and the second heating component 202 as an example. The dielectric window also includes:
第二加热组件202至第N加热组件，第i加热组件嵌入所述介电质层内，且所述第i加热组件环绕第i-1加热组件设置(如图3所示第一加热组件201环绕开孔110设置，且第二加热组件202环绕第一加热组件201设置，第一加热组件201和第二加热组件202的开口处用于接入各自相应的电源)，N为大于1的整数，i为大于1且不大于N的整数。From the second heating component 202 to the Nth heating component, the i-th heating component is embedded in the dielectric layer, and the i-th heating component is arranged around the i-1th heating component (as shown in FIG. 3 , the first heating component 201 is arranged around the opening 110, and the second heating component 202 is arranged around the first heating component 201, and the openings of the first heating component 201 and the second heating component 202 are used to connect to their respective power supplies), N is an integer greater than 1, and i is an integer greater than 1 and not greater than N.
可以理解的，本发明实施例通过在介电质层内设置更多的加热组件，提高了加热组件的加热辐射面积，进而能够进一步提高介电质窗口的加热效率。并且，将多个加热组件设置为依次环绕嵌套的方式，能够提高介电质窗口的各个区域的加热均匀性，保证介电质窗口各区域的温度均匀性高，进一步提高等离子体刻蚀工艺的稳定性，降低微量元素和颗粒污染的危险性。It can be understood that the embodiments of the present invention increase the heating radiation area of the heating components by arranging more heating components in the dielectric layer, thereby further improving the heating efficiency of the dielectric window. In addition, arranging multiple heating components in a surrounding and nested manner can improve the heating uniformity of each area of the dielectric window, ensure high temperature uniformity of each area of the dielectric window, further improve the stability of the plasma etching process, and reduce the risk of trace element and particle contamination.
可选的，本发明实施例提供的加热组件的环绕方式，可以呈圆形、椭圆形、多边形等规则或不规则的任意形状，对此本发明不做具体限制，需要根据实际应用进行具体设计，以达到最优的加热效果。Optionally, the surrounding manner of the heating component provided in the embodiment of the present invention can be any regular or irregular shape such as circular, elliptical, polygonal, etc. The present invention does not make any specific limitation on this, and needs to be specifically designed according to the actual application to achieve the best heating effect.
参考图4所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，在垂直所述介电质层100所在面的方向X上，且在所述第一加热组件201至所述第N加热组件中，不同加热组件至同一平面的间距不同。如图4所示，第一加热组件201至平面B的间距b1，与第二加热组件202至平面B的间距b2不同。Referring to FIG4, a schematic diagram of the structure of another dielectric window provided by an embodiment of the present invention is shown, wherein in the direction X perpendicular to the surface of the dielectric layer 100, and in the first heating component 201 to the Nth heating component, the spacings from different heating components to the same plane are different. As shown in FIG4, the spacing b1 from the first heating component 201 to the plane B is different from the spacing b2 from the second heating component 202 to the plane B.
可以理解的，本发明实施例将不同加热组件至同一平面的间距设置为不同，进而通过优化不同加热组件在介电质层中的位置，达到调节介电质窗口不同区域的加热效率的目的，优化了介电质窗口的温控效果。It can be understood that the embodiment of the present invention sets the distances between different heating components and the same plane to be different, and then optimizes the positions of different heating components in the dielectric layer to achieve the purpose of adjusting the heating efficiency of different areas of the dielectric window, thereby optimizing the temperature control effect of the dielectric window.
进一步参考图5所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，所述介电质层100包括朝向所述半导体设备的反应腔的加热面120，亦即，加热面120为介电质层100朝向反应腔的表面。第j加热组件与所述加热面120之间的间距，大于第j+1加热组件与所述加热面120之间的间距，j为不小于1且小于N的整数。如图5所示，在方向X上，本发明实施例提供的第一加热组件201至加热面120之间的间距b11，大于第二加热组件202至加热面120之间的间距b22。Further reference is made to FIG. 5 , which is a schematic diagram of the structure of another dielectric window provided in an embodiment of the present invention, wherein the dielectric layer 100 includes a heating surface 120 facing the reaction chamber of the semiconductor device, that is, the heating surface 120 is the surface of the dielectric layer 100 facing the reaction chamber. The spacing between the j-th heating component and the heating surface 120 is greater than the spacing between the j+1-th heating component and the heating surface 120, and j is an integer not less than 1 and less than N. As shown in FIG. 5 , in the direction X, the spacing b11 between the first heating component 201 and the heating surface 120 provided in an embodiment of the present invention is greater than the spacing b22 between the second heating component 202 and the heating surface 120.
可以理解的，本发明实施例提供的介电质窗口靠近开孔的区域距离等离子刻蚀机反应腔室的中心部位较近，由于距离开孔越近的区域产生的等离子体密度越高，等离子体对介电质窗口表面的加热效应就越大，易于被等离子体加热，因此将靠近开孔的第一加热组件与加热面之间的间距设置较大数值，以减缓第一加热组件对加热面相对区域的热量传递效率；同时，由于距离中心开孔越远的区域等离子体密度越弱，对介电质窗口表面的加热效应就越小，因此将远离开孔的第二加热组件与加热面之间的间距设置较小数值，以增大第二加热组件对加热面相对区域的热量传递效率，最终达到平衡加热面不同区域加热效率的目的，提高了介电质窗口的加热和温控的效果。It can be understood that the area of the dielectric window close to the opening provided in the embodiment of the present invention is closer to the center of the reaction chamber of the plasma etcher. Since the plasma density generated in the area closer to the opening is higher, the heating effect of the plasma on the surface of the dielectric window is greater, and it is easy to be heated by the plasma. Therefore, the distance between the first heating component close to the opening and the heating surface is set to a larger value to slow down the heat transfer efficiency of the first heating component to the area relative to the heating surface; at the same time, since the plasma density is weaker in the area farther from the central opening, the heating effect on the surface of the dielectric window is smaller. Therefore, the distance between the second heating component far away from the opening and the heating surface is set to a smaller value to increase the second heating component The heat transfer efficiency of the relative areas of the heating surface is improved, and ultimately the heating efficiency of different areas of the heating surface is balanced, thereby improving the heating and temperature control effects of the dielectric window.
参考图6所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，所述介电质层100包括第一子介电质层101至第N+1子介电质层，第j加热组件位于第j子介电质层与第j+1子介电质层之间，j为不小于1且小于N的整数。如图示中第一加热组件201位于第一子介电质层101和第二子介电质层102之间，及第二加热组件202位于第二子介电质层102和第三子介电质层103之间。Referring to FIG6 , a schematic diagram of the structure of another dielectric window provided by an embodiment of the present invention is shown, wherein the dielectric layer 100 includes a first sub-dielectric layer 101 to an N+1th sub-dielectric layer, and the jth heating component is located between the jth sub-dielectric layer and the j+1th sub-dielectric layer, where j is an integer not less than 1 and less than N. As shown in the figure, the first heating component 201 is located between the first sub-dielectric layer 101 and the second sub-dielectric layer 102, and the second heating component 202 is located between the second sub-dielectric layer 102 and the third sub-dielectric layer 103.
可以理解的，本发明实施例提供的介电质层可以在将加热组件制备于相邻两个子介电质层之间后，将多个子介电质层进行压制烧结形成。可选的，本发明实施例提供的第一子介电质层至第N子介电质层中，在不同子介电质层选用的材质不同时，选择子介电质层的材质时优选所有子介电质层的热膨胀系数相近，避免对介电质层进行压制烧结过程中出现开裂或断裂的问题。It is understandable that the dielectric layer provided in the embodiment of the present invention can be formed by pressing and sintering multiple sub-dielectric layers after the heating component is prepared between two adjacent sub-dielectric layers. Optionally, in the first sub-dielectric layer to the Nth sub-dielectric layer provided in the embodiment of the present invention, when different materials are selected for different sub-dielectric layers, when selecting the material of the sub-dielectric layer, it is preferred that the thermal expansion coefficients of all sub-dielectric layers are similar to avoid cracking or breaking during the pressing and sintering process of the dielectric layer.
此外，本发明实施例提供的第N+1子介电质层位于靠近反应腔一侧，而第一子介电质层位于远离反应腔一侧。优选的，本发明实施例将第N+1子介电质层的耐等离子体刻蚀性能设置为大于其余子介电质层的耐等离子体刻蚀性能，使得介电质窗口能够更好的抵御反应腔中等离子体的刻蚀，提高了介电质窗口的性能。In addition, the N+1th sub-dielectric layer provided in the embodiment of the present invention is located on the side close to the reaction chamber, while the first sub-dielectric layer is located on the side away from the reaction chamber. Preferably, the embodiment of the present invention sets the plasma etching resistance of the N+1th sub-dielectric layer to be greater than the plasma etching resistance of the remaining sub-dielectric layers, so that the dielectric window can better resist the etching of the plasma in the reaction chamber, thereby improving the performance of the dielectric window.
在本发明一实施例中，本发明实施例提供的所述第j子介电质层或所述第j+1子介电质层包括凹槽，所述第j加热组件位于所述凹槽中。具体的，在形成子介电质层后，在子介电质层上形成设定形状和尺寸的凹槽，而后通过镀膜、印刷或打印等工艺，在凹槽内形成加热组件，便于加热组件的制备。或者，本发明实施例提供的子介电质层上无凹槽形成，通过镀膜、印刷或打印等工艺将加热组件形成在子介电质层的表面，对此本发明实施例不做具体限制。In one embodiment of the present invention, the j-th sub-dielectric layer or the j+1-th sub-dielectric layer provided in the embodiment of the present invention comprises a groove, and the j-th heating component is located in the groove. Specifically, after forming the sub-dielectric layer, a groove of a set shape and size is formed on the sub-dielectric layer, and then the heating component is formed in the groove by a process such as coating, printing or printing, so as to facilitate the preparation of the heating component. Alternatively, the present invention The sub-dielectric layer provided in the embodiment of the invention has no grooves formed thereon, and the heating component is formed on the surface of the sub-dielectric layer by processes such as plating, printing or printing, and the embodiment of the invention does not impose any specific limitation on this.
在本发明一实施例中，本发明实施例提供的所述第一子介电质层至第N+1子介电质层中，所有子介电质层的材质相同；或者，在所述第一子介电质层至第N+1子介电质层中，至少一个子介电质层的材质与其他子介电质层的材质不同。可选的，在所述第一子介电质层至第N+1子介电质层中，任意一子介电质层的材质包括Al2O3、YAG、YOF和Y2O3中至少一种。In one embodiment of the present invention, in the first sub-dielectric layer to the N+1th sub-dielectric layer provided in the embodiment of the present invention, the material of all the sub-dielectric layers is the same; or, in the first sub-dielectric layer to the N+1th sub-dielectric layer, the material of at least one sub-dielectric layer is different from the materials of the other sub-dielectric layers. Optionally, in the first sub-dielectric layer to the N+1th sub-dielectric layer, the material of any sub-dielectric layer includes at least one of Al2 O3 , YAG, YOF and Y2 O3 .
可选的，以本发明实施例提供的子介电质层的材质为陶瓷材质为例，在对介电质层进行制备时，可以选用相同材质或不同材质的陶瓷粉料压制成多个子介电质层，而后采用通常的陶瓷烧结工艺将多个子介电质层加压烧结形成介电质层。具体的，陶瓷粉料被压制成陶瓷板材后，可以进行机械切削加工成为具有设定形状和尺寸要求的子介电质层。其中，选择不同的陶瓷粉料形成不同的子介电质层时，与反应腔接触的子介电质层选用耐等离子体刻蚀的陶瓷粉料，如YAG、Y2O3等，使得压制烧结形成的介电质层能够抵御等离子体的腐蚀，具有更高的稳定性。此外，选择不同的陶瓷粉料形成不同的子介电质层时，选择陶瓷粉料需要满足不同子介电质层之间的热膨胀系数差异小，避免对多个子介电质层进行压制烧结形成介电质层时出现开裂或断裂的问题，如选择本发明实施例提供的Al2O3、YAG、YOF和Y2O3中至少一种，由于Al2O3、YAG和YOF、Y2O3的热膨胀系数相近，形成的介电质层不易出现开裂损坏的问题。介电质层的烧结可以在常规的制备Al2O3陶瓷的烧结设备中进行，烧结温度范围在1150-1950℃。Optionally, taking the case where the material of the sub-dielectric layer provided in the embodiment of the present invention is a ceramic material, when preparing the dielectric layer, ceramic powders of the same material or different materials can be selected to be pressed into multiple sub-dielectric layers, and then the multiple sub-dielectric layers are pressurized and sintered by a conventional ceramic sintering process to form a dielectric layer. Specifically, after the ceramic powder is pressed into a ceramic plate, it can be mechanically cut into a sub-dielectric layer with a set shape and size requirements. Among them, when different ceramic powders are selected to form different sub-dielectric layers, the sub-dielectric layer in contact with the reaction chamber uses a ceramic powder resistant to plasma etching, such as YAG,Y2O3 ,etc. , so that the dielectric layer formed by pressing and sintering can resist the corrosion of plasma and has higher stability. In addition, when different ceramic powders are selected to form different sub-dielectric layers, the ceramic powders need to be selected to satisfy the small difference in thermal expansion coefficients between different sub-dielectric layers, so as to avoid cracking or breaking when multiple sub-dielectric layers are pressed and sintered to form a dielectric layer. For example, at least one of Al2 O3 , YAG, YOF and Y2 O3 provided in the embodiment of the present invention is selected. Since the thermal expansion coefficients of Al2 O3 , YAG and YOF, Y2 O3 are similar, the formed dielectric layer is not prone to cracking and damage. The sintering of the dielectric layer can be carried out in a conventional sintering device for preparing Al2 O3 ceramics, and the sintering temperature range is 1150-1950°C.
在本发明一实施例中，本发明实施例提供的所述第一加热组件至所述第N加热组件的至少一个加热组件包括加热线，进而通过对加热线通电使得其发热，以对介电质窗口进行加热。此外，在本发明其他实施例中，本发明提供的加热组件还可以为其他类型加热器，对此本发明不做具体限制。In one embodiment of the present invention, at least one of the first heating component to the Nth heating component provided in the embodiment of the present invention comprises a heating wire, and then the heating wire is energized to generate heat to heat the dielectric window. In addition, in other embodiments of the present invention, the heating component provided by the present invention may also be other types of heaters, which are not specifically limited by the present invention.
可选的，所述加热线的材质为金属、合金或陶瓷；或者，所述加热线包括第一导电层、位于所述第一导电层上的导电芯层和覆盖所述导电芯层的第二导电层，所述第一导电层和所述第二导电层的材质的耐高温氧化能力大于所述导电芯层的材质的耐高温氧化能力。Optionally, the heating wire is made of metal, alloy or ceramic; or, the heating wire includes a first conductive layer, a conductive core layer located on the first conductive layer and a second conductive layer covering the conductive core layer, and the high-temperature oxidation resistance of the materials of the first conductive layer and the second conductive layer is greater than the high-temperature oxidation resistance of the material of the conductive core layer.
可以理解的，本发明实施例提供的加热线的材质可以为金属或合金材料，如W、Mo、Ni-Cr合金、Fe-Ni-Cr合金。或者，加热线的材质可以为陶瓷，如SiC、ITO、BC等。或者，加热线可以为第一导电层和第二导电层包裹导电芯层的结构，第一导电层和第二导电层的耐高温氧化的能力大于导电芯层耐高温氧化的能力，且导电芯层的加热能力大于第一导电层和第二导电层的加热能力；首先通过镀膜、打印或印刷等工艺将耐高温氧化的第一导电层制备在子介电质层上，而后通过镀膜、打印或印刷等工艺将具有良好加热性能但耐高温氧化能力较差的导电芯层制备在第一导电层上，最后通过镀膜、打印或印刷等工艺将第二导电层覆盖包裹导电芯层形成三明治结构，第一导电层和第二导电层能够将导电芯层保护不被高温氧化，使得加热线具有良好的加热性能。其中，第一导电层、第二导电层和导电芯层的材质可以为金属、合金或陶瓷，对此本发明不做具体限制。It can be understood that the material of the heating wire provided in the embodiment of the present invention can be a metal or alloy material, such as W, Mo, Ni-Cr alloy, Fe-Ni-Cr alloy. Alternatively, the material of the heating wire can be ceramic, such as SiC, ITO, BC, etc. Alternatively, the heating wire can be a structure in which the first conductive layer and the second conductive layer wrap the conductive core layer, and the ability of the first conductive layer and the second conductive layer to resist high temperature oxidation is greater than the ability of the conductive core layer to resist high temperature oxidation, and the heating capacity of the conductive core layer is greater than the heating capacity of the first conductive layer and the second conductive layer; firstly, the first conductive layer resistant to high temperature oxidation is prepared on the sub-dielectric layer by processes such as coating, printing or printing, and then the conductive core layer with good heating performance but poor high temperature oxidation resistance is prepared on the first conductive layer by processes such as coating, printing or printing, and finally, the second conductive layer is covered and wrapped with the conductive core layer by processes such as coating, printing or printing to form a sandwich structure, and the first conductive layer and the second conductive layer can protect the conductive core layer from being oxidized at high temperature, so that the heating wire has good heating performance. Among them, the materials of the first conductive layer, the second conductive layer and the conductive core layer can be metal, alloy or ceramic, and the present invention does not make specific restrictions on this.
为了便于对加热组件上电，本发明实施例提供的加热组件连接有接线端。参考图7所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，本发明实施例提供的所述介电质窗口还包括：In order to facilitate powering on the heating component, the heating component provided in the embodiment of the present invention is connected with a wiring terminal. Referring to FIG. 7 , a schematic diagram of the structure of another dielectric window provided in the embodiment of the present invention is shown, wherein: The dielectric window provided in the embodiment of the present invention further includes:
第一接线端301至第N接线端，所述第k接线端与第k加热组件相连，其中，所述第k接线端嵌入介电质层100内，且所述第k接线端包括裸露所述介电质层100外的部分，k为不小于1且不大于N的整数。如图所示的第一接线端301和第二接线端302包括有输入和输出两个线端，且两个线端均包括有裸露在介电质层100外的部分，其中，第一接线端301的两个线端对应与第一加热组件201的两个线端相连，第二接线端302的两个线端对应与第二加热组件202的两个线端相连，用于为第一加热组件201和第二加热组件202供电。The first terminal 301 to the Nth terminal, the kth terminal is connected to the kth heating component, wherein the kth terminal is embedded in the dielectric layer 100, and the kth terminal includes a portion exposed outside the dielectric layer 100, and k is an integer not less than 1 and not greater than N. As shown in the figure, the first terminal 301 and the second terminal 302 include two terminals, an input terminal and an output terminal, and both terminals include a portion exposed outside the dielectric layer 100, wherein the two terminals of the first terminal 301 are correspondingly connected to the two terminals of the first heating component 201, and the two terminals of the second terminal 302 are correspondingly connected to the two terminals of the second heating component 202, for supplying power to the first heating component 201 and the second heating component 202.
可选的，本发明实施例提供的所有接线端可以位于介电质层的同侧，或者，至少一个接线端与其他接线端位于介电质层的不同层，对此本发明不做具体限制。相应的，第k接线端与第k加热组件均位于第k子介电质层和第k+1子介电质层之间；以及，在第k子介电质层或第k+1子介电质层包括有凹槽时，第k加热组件和第k接线端均位于该凹槽内。Optionally, all the terminals provided in the embodiment of the present invention may be located on the same side of the dielectric layer, or at least one terminal may be located on a different layer of the dielectric layer from the other terminals, and the present invention does not impose any specific restrictions on this. Accordingly, the kth terminal and the kth heating component are both located between the kth sub-dielectric layer and the k+1th sub-dielectric layer; and when the kth sub-dielectric layer or the k+1th sub-dielectric layer includes a groove, the kth heating component and the kth terminal are both located in the groove.
进一步参考图8所示，为本发明实施例提供的又一种介电质窗口的结构示意图，且图8为图7中沿CC’方向的切面图，其中，本发明实施例提供的所述第k接线端(如图示以第二接线端302为例)包括：Further referring to FIG. 8 , which is a schematic diagram of the structure of another dielectric window provided in an embodiment of the present invention, and FIG. 8 is a cross-sectional view along the CC′ direction in FIG. 7 , wherein the k-th terminal (taking the second terminal 302 as an example in the figure) provided in an embodiment of the present invention includes:
连接线310和外接引脚320，所述连接线310嵌入所述介电质层100内与所述第k加热组件相连，且所述连接线310背离其与所述第k加热组件连接端一侧包括填充槽；所述外接引脚320填充于所述填充槽内，且所述外接引脚320裸露所述介电质层100外。A connecting wire 310 and an external pin 320, wherein the connecting wire 310 is embedded in the dielectric layer 100 and connected to the kth heating component, and the connecting wire 310 includes a filling groove on the side away from the connection end thereof with the kth heating component; the external pin 320 is filled in the filling groove, and the external pin 320 is exposed outside the dielectric layer 100.
可以理解的，本发明实施例提供的接线端在制备时，可以通过镀膜、印刷或打印等工艺在子介电质层上形成连接线，而后在介电质层压制烧结过程连接线被烧结形成实心体结构，通过打孔工艺对连接线进行打孔形成填充槽，最后在填充槽内填充外接引脚，形成外接电源的接头。It is understandable that the terminal provided in the embodiment of the present invention can be prepared by forming a connecting line on the sub-dielectric layer through a process such as coating, printing or printing, and then connecting the sub-dielectric layer during the pressing and sintering process. The wire is sintered to form a solid body structure, the connecting wire is punched through a punching process to form a filling slot, and finally the external pin is filled in the filling slot to form a connector for an external power supply.
在本发明一实施例中，本发明实施例提供的连接线的材质可以与加热线相同，在子介电质层上形成加热线的同时制备连接线，使得连接线具有良好的加热性能；同时为了避免连接线处过热造成的不良影响，在连接线处设置导热导电良好的外接引脚；其中，本发明实施例提供的所述连接线的材质的耐高温氧化能力大于所述外接引脚的材质的耐高温氧化能力；及所述连接线的材质的电阻大于所述外接引脚的材质的电阻，由此，通过低电阻的外接引脚提高接线端的性能，并且设置耐高温氧化的连接线来避免接线端在压制烧结过程出现氧化问题。可选的，本发明实施例提供的连接线的材质可以为金属、合金或陶瓷(如金属钨、陶瓷Al2O3等)，及外接引脚的材质可以为金属(如铜金属，由于铜的熔点较小，对填充槽进行铜材料填充时，可以通过局部浇铸挤压、螺纹连接等工艺形成外接引脚)。In one embodiment of the present invention, the material of the connecting wire provided in the embodiment of the present invention can be the same as that of the heating wire. The connecting wire is prepared while the heating wire is formed on the sub-dielectric layer, so that the connecting wire has good heating performance; at the same time, in order to avoid the adverse effects caused by overheating at the connecting wire, an external pin with good thermal and electrical conductivity is set at the connecting wire; wherein, the high temperature oxidation resistance of the material of the connecting wire provided in the embodiment of the present invention is greater than the high temperature oxidation resistance of the material of the external pin; and the resistance of the material of the connecting wire is greater than the resistance of the material of the external pin, thereby improving the performance of the terminal through the low resistance external pin, and setting the high temperature oxidation resistant connecting wire to avoid the oxidation problem of the terminal during the pressing and sintering process. Optionally, the material of the connecting wire provided in the embodiment of the present invention can be metal, alloy or ceramic (such as metaltungsten , ceramicAl2O3 , etc.), and the material of the external pin can be metal (such as copper metal, because copper has a low melting point, when the filling slot is filled with copper material, the external pin can be formed by local casting extrusion, threaded connection and other processes).
进一步的，为了改善加热面的疏松和孔洞问题，本发明实施例提供的介电质窗口还包括形成在加热面侧的致密薄膜。如图9所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，本发明实施例提供的所述介电质层100包括朝向所述半导体设备的反应腔的加热面120(加热面120亦即介质层100朝向反应腔一侧的表面)，其中，所述介电质窗口还包括：Furthermore, in order to improve the looseness and hole problems of the heating surface, the dielectric window provided in the embodiment of the present invention also includes a dense film formed on the heating surface side. As shown in FIG9, it is a structural schematic diagram of another dielectric window provided in the embodiment of the present invention, wherein the dielectric layer 100 provided in the embodiment of the present invention includes a heating surface 120 facing the reaction chamber of the semiconductor device (the heating surface 120 is also the surface of the dielectric layer 100 facing the reaction chamber), wherein the dielectric window also includes:
覆盖所述加热面120的致密薄膜400，其中，致密薄膜400的孔隙率小于加热面120的孔隙率，及致密薄膜400的疏松度小于加热面120的疏松度。A dense film 400 covers the heating surface 120 , wherein the porosity of the dense film 400 is smaller than the porosity of the heating surface 120 , and the looseness of the dense film 400 is smaller than the looseness of the heating surface 120 .
可选的，本发明实施例提供的所述致密薄膜的厚度范围为0.1-500μm。Optionally, the dense film provided in the embodiment of the present invention has a thickness ranging from 0.1 to 500 μm.
可以理解的，本发明实施例提供的介电质层为陶瓷等材质时，对介电质层进行压制烧结过程中，由于体积收缩及粘结剂的烧损等情况，会使得形成的介电质层存在少量的疏松和孔洞。本发明实施例通过在加热面一侧形成覆盖加热面的致密薄膜，有效的覆盖介电质层的缺陷组织，进而能够降低等离子体对介电质层造成的刻蚀影响，降低等离子体刻蚀过程中出现的颗粒污染等问题。It is understandable that when the dielectric layer provided in the embodiment of the present invention is made of ceramic or other materials, the dielectric layer During the pressing and sintering process, due to volume shrinkage and burnout of the binder, the formed dielectric layer will have a small amount of looseness and holes. The embodiment of the present invention forms a dense film covering the heating surface on one side of the heating surface, effectively covering the defective structure of the dielectric layer, thereby reducing the etching effect of plasma on the dielectric layer and reducing problems such as particle contamination during plasma etching.
在本发明一实施例中，本发明实施例可以采用PEPVD(等离子体增强物理气相沉淀)或CVD(化学气相沉淀)等工艺形成该致密薄膜。其中，PEPVD是由PVD和Plasma Enhancement(等离子体增强)两种工艺结合而进行的表面薄膜沉积过程。其中，PVD工艺可以通过真空蒸镀(evaporation)、离子轰击溅射(ion bombardment sputtering)、磁控溅射(magnetron sputtering)等工艺方法进行，而等离子体增强功能可以通过等离子体中的离子轰击以及离子束轰击(Ion beam bombardment)而实现。由于离子的轰击效应，可以将薄膜生长过程中的弱原子键打断，促使原子表面扩散而形成取向一致的致密晶态或非晶态组织。因而与其它薄膜沉积工艺如蒸镀、等离子体喷涂等所制备的薄膜相比，PEPVD形成的薄膜组织致密，耐等离子体刻蚀性能大大增强。另外，由于是PVD与等离子体工艺相结合，PEPVD可以在较低温度(如＜200℃)的工件表面上进行，而且薄膜厚度可以达到150微米以上，非常适合在陶瓷工件表面沉积足够厚度(如＞10μm)的陶瓷薄膜如Y2O3等，因此，近年来被广泛的应用于等离子体刻蚀设备中防护等离子体刻蚀的关键工件的表面薄膜保护工作中。In one embodiment of the present invention, the embodiment of the present invention can form the dense film by using processes such as PEPVD (plasma enhanced physical vapor deposition) or CVD (chemical vapor deposition). Among them, PEPVD is a surface thin film deposition process that combines PVD and Plasma Enhancement. Among them, the PVD process can be carried out by vacuum evaporation, ion bombardment sputtering, magnetron sputtering and other process methods, and the plasma enhancement function can be achieved by ion bombardment in plasma and ion beam bombardment. Due to the bombardment effect of ions, the weak atomic bonds in the film growth process can be broken, and the atomic surface diffusion is promoted to form a dense crystalline or amorphous structure with consistent orientation. Therefore, compared with other thin film deposition processes such as evaporation, plasma spraying, etc., the film formed by PEPVD has a dense structure and greatly enhanced plasma etching resistance. In addition, because PVD is combined with plasma technology, PEPVD can be carried out on the surface of workpieces at relatively low temperatures (such as <200°C), and the film thickness can reach more than 150 microns. It is very suitable fordepositing ceramic films such asY2O3 with sufficient thickness (such as >10μm) on the surface of ceramic workpieces. Therefore, in recent years, it has been widely used in plasma etching equipment to protect the surface film of key workpieces from plasma etching.
在本发明一实施例中，本发明实施例提供的介电质窗口还可以包括一保护膜对介电质层进行防护。参考图10所示，为本发明实施例提供的又一种介电质窗口的结构示意图，其中，所述介电质窗口还包括：In one embodiment of the present invention, the dielectric window provided by the embodiment of the present invention may further include a protective film to protect the dielectric layer. Referring to FIG10 , a schematic diagram of the structure of another dielectric window provided by the embodiment of the present invention is shown, wherein the dielectric window further includes:
包覆所述介电质层100的裸露表面的保护膜500，其中，所述致密薄膜400位于所述介电质层100的加热面120一侧，且所述致密薄膜400位于所述保护膜500背离所述加热面120一侧。The protective film 500 covers the exposed surface of the dielectric layer 100 , wherein the dense film 400 is located on the heating surface 120 side of the dielectric layer 100 , and the dense film 400 is located on the side of the protective film 500 away from the heating surface 120 .
可选的，本发明实施例提供的所述保护膜的厚度范围为0.1-500μm。Optionally, the protective film provided in the embodiment of the present invention has a thickness ranging from 0.1 to 500 μm.
可以理解的，本发明实施例提供的介电质层的裸露表面通过保护膜进行全方位覆盖，以对介电质层的裸露表面进行保护，增强介电质层的耐化学腐蚀、耐等离子体刻蚀等能力，进一步提高介电质窗口的稳定性和使用寿命。It can be understood that the exposed surface of the dielectric layer provided in the embodiment of the present invention is fully covered by a protective film to protect the exposed surface of the dielectric layer, enhance the dielectric layer's resistance to chemical corrosion, plasma etching, etc., and further improve the stability and service life of the dielectric window.
在本发明一实施例中，本发明提供的保护膜可以采用ALD(Atomic Layer Deposition，原子层薄膜沉积)形成。ALD是一种以单原子层生长的特殊化学气相沉积(CVD)过程，其薄膜生长过程一般可以在450℃以下的低温低压环境中进行。与普通的CVD不同的工艺特点在于，ALD过程中的化学反应躯体(Chemical Precursor)在没有接触到基体表面之前并不发生分解，而是在被吸附到基体表面上后在表面发生化学分解反应，并且分解形成的化学组分(Radical)均匀的覆盖在整个基体表面形成原子层沉积。因此，只要在ALD过程中控制反应气体分布，使其化学反应躯体能够充分扩散接触到构件表面，并辅以足够时间的吹扫排除剩余的前躯体，ALD过程就能够在具有诸如复杂几何外形表面、圆柱管内外壁、以及细小气孔内表面的工程构件形成均匀的多原子层堆嵌成长的薄膜。由于是通过反应躯体分解进行的原子层生长成膜，ALD薄膜组织很致密，能够形成对基体部件全方位表面覆盖，并且薄膜具有良好的界面结合力和组织热稳定性。In one embodiment of the present invention, the protective film provided by the present invention can be formed by ALD (Atomic Layer Deposition). ALD is a special chemical vapor deposition (CVD) process that grows a single atomic layer, and its film growth process can generally be carried out in a low-temperature and low-pressure environment below 450°C. The process feature different from ordinary CVD is that the chemical reaction body (Chemical Precursor) in the ALD process does not decompose before contacting the substrate surface, but undergoes a chemical decomposition reaction on the surface after being adsorbed on the substrate surface, and the chemical components (Radical) formed by the decomposition are uniformly covered on the entire substrate surface to form atomic layer deposition. Therefore, as long as the distribution of the reaction gas is controlled in the ALD process so that the chemical reaction body can fully diffuse and contact the surface of the component, and the remaining precursor is purged for a sufficient time to remove the remaining precursor, the ALD process can form a uniform multi-atomic layer stacked growth film on engineering components with complex geometric shapes, inner and outer walls of cylindrical tubes, and inner surfaces of fine pores. Since the ALD film is formed by atomic layer growth through decomposition of the reaction body, the ALD film structure is very dense and can form all-round surface coverage of the substrate component. The film also has good interface bonding strength and thermal stability.
本发明实施例提供的保护膜可以是单层膜，其中，本发明实施例提供的保护膜优选选择化学成分及组织结构与介电质层相近的耐等离子体刻蚀的材质，如介电质层材质为Al2O3时保护膜为Al2O3等，及介电质层材质为Y2O3时保护膜为Y2O3、YF3或YOF等，使得保护膜与介电质层具有较小的界面形变应力，有利于提高介电质窗口的稳定性。可选的，本发明实施例提供的保护膜可以为非晶态氧化铝子保护膜，以通过非晶态氧化铝子保护膜阻止介电质层中的微量元素扩散至保护膜，从而降低半导体设备使用过程中的微量元素污染。The protective film provided by the embodiment of the present invention may be a single-layer film, wherein the protective film provided by the embodiment of the present invention is preferably made of a plasma etching resistant material having a chemical composition and a structure similar to that of the dielectric layer. For example, when the material of the dielectric layer is Al2 O3 , the protective film is Al2 O3 , and when the material of the dielectric layer is Y2 O3 , the protective film is Y2 O3 , YF3 or YOF, so that the protective film and the dielectric layer have a smaller interface deformation stress, which is beneficial to improve the stability of the dielectric window. Optionally, the protective film provided by the embodiment of the present invention can be an amorphous aluminum oxide sub-protective film, so that the trace elements in the dielectric layer are prevented from diffusing to the protective film through the amorphous aluminum oxide sub-protective film, thereby reducing the trace element contamination during the use of the semiconductor device.
或者，本发明实施例提供的保护膜还可以是多层膜，即本发明实施例提供的所述保护膜包括：依次形成的多个子保护膜，其中，在所述多个子保护膜中，初始的所述子保护膜包覆所述介质层的裸露表面，且后一所述子保护膜包覆前一所述子保护膜的裸露表面。可选的，本发明实施例提供的所述保护膜包括：依次形成的非晶态氧化铝子保护膜和氧化钇子保护膜；或者，依次形成的非晶态氧化铝子保护膜、晶态氧化铝子保护膜和氧化钇子保护膜。Alternatively, the protective film provided by the embodiment of the present invention may also be a multilayer film, that is, the protective film provided by the embodiment of the present invention includes: a plurality of sub-protective films formed in sequence, wherein, among the plurality of sub-protective films, the initial sub-protective film covers the exposed surface of the dielectric layer, and the latter sub-protective film covers the exposed surface of the former sub-protective film. Optionally, the protective film provided by the embodiment of the present invention includes: an amorphous aluminum oxide sub-protective film and a yttrium oxide sub-protective film formed in sequence; or, an amorphous aluminum oxide sub-protective film, a crystalline aluminum oxide sub-protective film and a yttrium oxide sub-protective film formed in sequence.
可以理解的，本发明实施例提供的保护膜，首先在介电质层表面形成一层非晶态氧化铝子保护膜，以通过非晶态氧化铝子保护膜阻止介电质层中的微量元素扩散至保护膜，从而降低半导体设备使用过程中的微量元素污染。而后形成一层氧化钇子保护膜，由于氧化铝和氧化钇的热膨胀系数很接近，而氧化钇在不同的等离子体环境中(含O2、含F、含Cl、含HBr等)的耐等离子体刻蚀性能要远远高于氧化铝，因此，在非晶态氧化铝子保护膜表面上沉积氧化钇子保护膜，能够进一步增强介电质窗口的工艺稳定性和在不同半导体设备中的应用范围。It can be understood that the protective film provided by the embodiment of the present invention first forms a layer of amorphous aluminum oxide sub-protective film on the surface of the dielectric layer, so as to prevent the trace elements in the dielectric layer from diffusing to the protective film through the amorphous aluminum oxide sub-protective film, thereby reducing the trace element pollution during the use of the semiconductor device. Then, a layer of yttrium oxide sub-protective film is formed. Since the thermal expansion coefficients of aluminum oxide and yttrium oxide are very similar, and the plasma etching resistance of yttrium oxide in different plasma environments (containingO2 , F, Cl, HBr, etc.) is much higher than that of aluminum oxide, therefore, depositing the yttrium oxide sub-protective film on the surface of the amorphous aluminum oxide sub-protective film can further enhance the process stability of the dielectric window and the application range in different semiconductor devices.
进一步的，为了增强非晶态氧化铝子保护膜和氧化钇子保护膜之间的结合力，本发明实施例提供的保护膜还包括位于非晶态氧化铝子保护膜和氧化钇子保护膜之间的晶态氧化铝子保护膜。Furthermore, in order to enhance the bonding force between the amorphous aluminum oxide sub-protective film and the yttrium oxide sub-protective film, the protective film provided in the embodiment of the present invention also includes a crystalline aluminum oxide sub-protective film located between the amorphous aluminum oxide sub-protective film and the yttrium oxide sub-protective film.
需要说明的是，本发明实施例提供的保护膜并不局限于上述几种方式，在本发明其他实施例中，本发明提供的保护膜还可以包括其他类型的子保护膜的叠加，对此需要根据实际应用中环境及性能等参数进行具体设计。It should be noted that the protective film provided by the embodiments of the present invention is not limited to the above-mentioned methods. In other embodiments of the present invention, the protective film provided by the present invention may also include the superposition of other types of sub-protective films, which needs to be specifically designed according to parameters such as the environment and performance in actual applications.
在本发明上述任意一实施例中，本发明实施例提供的所述保护膜和所述致密薄膜中任意一个的材质包括：Al2O3、Y2O3、YF3、YOF、ZrO2、Er2O3、SiC、SiO2、HfO2、Si3N4、AlN、B2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3、YAG、EAG、YAM、YAP、EAM、EAP中至少一种。进一步的，在上述所述保护膜和所述致密薄膜的材质的基础上，本发明实施例提供的所述保护膜和所述致密薄膜中任意一个还可以为以上述材质为基的复合陶瓷薄膜。In any of the above embodiments of the present invention, the material of any one of the protective film and the dense film provided in the embodiment of the present invention includes at least one of Al2 O3 , Y2 O3 , YF3 , YOF, ZrO2 , Er2 O3 , SiC, SiO2 , HfO2 , Si3 N4 , AlN, B2 O3 , Nd2 O3 , Nb2 O5 , CeO2 , Sm2 O3 , Yb2 O3 , YAG, EAG, YAM, YAP, EAM, and EAP. Further, based on the materials of the above protective film and the dense film, any one of the protective film and the dense film provided in the embodiment of the present invention can also be a composite ceramic film based on the above materials.
相应的，本发明实施例还提供了一种半导体设备，所述半导体设备包括上述任意一实施例提供的介电质窗口。Correspondingly, an embodiment of the present invention further provides a semiconductor device, wherein the semiconductor device includes the dielectric window provided by any one of the above embodiments.
可选的，本发明实施例提供的所述半导体设备可以为等离子体刻蚀设备，对此本发明不做具体限制。Optionally, the semiconductor device provided in the embodiment of the present invention may be a plasma etching device, which is not specifically limited in the present invention.
本发明实施例提供了一种介电质窗口及半导体设备，包括：介电质层，所述介电质层包括贯穿所述介电质层的开孔；第一加热组件，所述第一加热组件嵌入所述介电质层内，且所述第一加热组件环绕所述开孔设置。可见，本发明实施例提供的技术方案，将第一加热组件嵌入在介电质层内部，进而在对第一加热组件进行上电后，控制介电质层自内向外加热，不仅能够提高对介电质窗口的加热效率，而且通过将第一加热组件呈环绕开孔设置，能够显著改善介电质窗口表面的温度分布均匀性，从而在提高了等离子体刻蚀工艺的稳定性的同时，还避免了对介电质窗口加热不均匀所引起的对反应腔造成颗粒污染和微量元素污染的问题。The embodiment of the present invention provides a dielectric window and a semiconductor device, comprising: a dielectric layer, the dielectric layer comprising an opening penetrating the dielectric layer; a first heating component, the first heating component being embedded in the dielectric layer, and the first heating component being arranged around the opening. It can be seen that the technical solution provided by the embodiment of the present invention embeds the first heating component inside the dielectric layer, and then after the first heating component is powered on, controls the dielectric layer to be heated from the inside to the outside, which can not only improve the heating efficiency of the dielectric window, but also significantly improve the uniformity of the temperature distribution on the surface of the dielectric window by arranging the first heating component around the opening, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.
在本发明中，除非另有明确的规定和限定，如出现术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接或彼此可通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be fixedly connected, detachably connected, or integrated; it can be mechanically connected, electrically connected, or able to communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311149707.4 | 2023-09-06 | ||
| CN202311149707.4ACN119581304A (en) | 2023-09-06 | 2023-09-06 | Dielectric window and semiconductor device |
| Publication Number | Publication Date |
|---|---|
| WO2025050981A1true WO2025050981A1 (en) | 2025-03-13 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2024/113546PendingWO2025050981A1 (en) | 2023-09-06 | 2024-08-21 | Dielectric window and semiconductor device |
| Country | Link |
|---|---|
| CN (1) | CN119581304A (en) |
| TW (1) | TW202527028A (en) |
| WO (1) | WO2025050981A1 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000164567A (en)* | 1998-11-24 | 2000-06-16 | Sony Corp | Plasma etching method |
| US20150191823A1 (en)* | 2014-01-06 | 2015-07-09 | Applied Materials, Inc. | High efficiency inductively coupled plasma source with customized rf shield for plasma profile control |
| US20180265972A1 (en)* | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| CN114695050A (en)* | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Plasma etching equipment and temperature control method of ceramic window |
| CN114743855A (en)* | 2022-05-06 | 2022-07-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN115602623A (en)* | 2022-10-27 | 2023-01-13 | 武汉新芯集成电路制造有限公司（Cn） | Semiconductor device and manufacturing method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000164567A (en)* | 1998-11-24 | 2000-06-16 | Sony Corp | Plasma etching method |
| US20150191823A1 (en)* | 2014-01-06 | 2015-07-09 | Applied Materials, Inc. | High efficiency inductively coupled plasma source with customized rf shield for plasma profile control |
| US20180265972A1 (en)* | 2017-03-17 | 2018-09-20 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| CN114695050A (en)* | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Plasma etching equipment and temperature control method of ceramic window |
| CN114743855A (en)* | 2022-05-06 | 2022-07-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN115602623A (en)* | 2022-10-27 | 2023-01-13 | 武汉新芯集成电路制造有限公司（Cn） | Semiconductor device and manufacturing method thereof |
| Publication number | Publication date |
|---|---|
| CN119581304A (en) | 2025-03-07 |
| TW202527028A (en) | 2025-07-01 |
| Publication | Publication Date | Title |
|---|---|---|
| US7364624B2 (en) | Wafer handling apparatus and method of manufacturing thereof | |
| KR102775426B1 (en) | Corrosion resistant ground shield of processing chamber | |
| KR100420456B1 (en) | Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, and semiconductor manufacturing apparatus | |
| US6204489B1 (en) | Electrically heated substrate with multiple ceramic parts each having different volume restivities | |
| JPWO2003047312A1 (en) | Ceramic heater | |
| KR20010105389A (en) | Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage | |
| CN104241183B (en) | The manufacture method of electrostatic chuck, electrostatic chuck and plasma processing apparatus | |
| US12195402B2 (en) | Multi-layer composite ceramic plate and manufacturing method thereof | |
| TWI876126B (en) | Electrostatic chuck with differentiated ceramics | |
| TWI860803B (en) | Ceramic base | |
| JP2022552776A (en) | Ceramic heater and its manufacturing method | |
| KR20240096863A (en) | Electrostatic chuck with removable shaft | |
| US8115141B2 (en) | Heating element | |
| WO2025050981A1 (en) | Dielectric window and semiconductor device | |
| US11881423B2 (en) | Electrostatic chuck with metal bond | |
| WO2022077821A1 (en) | Electrostatic chuck provided with heating function and preparation method therefor | |
| TWI858322B (en) | Substrate support assembly | |
| KR102867889B1 (en) | Electrostatic chuck with metal shaft | |
| CN117954300B (en) | Ceramic base | |
| JP4529690B2 (en) | Wafer holder for semiconductor manufacturing apparatus, manufacturing method thereof, and semiconductor manufacturing apparatus | |
| JP7748587B2 (en) | Susceptor for high temperature processes | |
| JP2018181697A (en) | Heating device | |
| WO2025124202A1 (en) | Wavelength conversion apparatus and preparation method therefor, and light-emitting apparatus | |
| KR20230150371A (en) | Electrostatic chuck with metal shaft | |
| JP2025110062A (en) | Semiconductor substrate processing base, ceramic base material, and manufacturing method |
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | Ref document number:24861825 Country of ref document:EP Kind code of ref document:A1 |