IN SITU PLASMA ASSISTED PASSIVATION
BACKGROUND
Field
[0001] Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as primary and secondary electrochemical devices, including the aforementioned lithium-containing electrodes, and methods for fabricating the same.
Description of the Related Art
[0002] Lithium (Li) ion batteries have played a vital role in the development of current generation mobile devices, microelectronics, and electric vehicles. A typical Li-ion battery is made of a positive electrode (cathode), a negative electrode (anode), an electrolyte to conduct ions, a porous separator membrane (electrical insulator) between the two electrodes to keep the electrodes physically apart, and the packaging.
[0003] Methods of depositing lithium on substrates, such as large flexible substrates, can be temperature sensitive and cause the formation of wrinkles and other defects. The substrate may be guided on and supported by a coating apparatus with a surface. A vapor or molten lithium may be deposited on the substrate while the substrate moves on the surface of the coating apparatus past the deposition source or sources. After deposition of the lithium, the lithium may be passivated in a vacuum or an inert atmosphere to mitigate the formation of undesirable compounds. Uniform passivation of lithium supports performance of batteries that use the lithium coated substrate by preventing severe degradation of lithium that may occur after deposition.
[0004] Therefore, there is a need for apparatuses and methods to uniformly passivate lithium disposed on a substrate and to improve throughput.
SUMMARY
[0005] In some embodiments, a passivation source apparatus for passivating a material deposited on a substrate is provided. The apparatus includes a radical source capable of generating radicals from at least one precursor gas, a precursor gas inlet coupled to the radical source, the precursor gas inlet providing the at least one precursor gas to the radical source, and a radical outlet coupled to the radical source. The radical outlet substantially faces a fresh surface of the material and is capable of passivating the material by directing the radicals to the fresh surface of the material.
[0006] In some embodiments, a deposition apparatus is provided. The apparatus includes a deposition source configured to deposit a material onto a substrate and a passivation source for passivating a material deposited on a substrate. The passivation source includes a radical source capable of generating radicals from at least one precursor gas, a precursor gas inlet coupled to the radical source, the precursor gas inlet providing the at least one precursor gas to the radical source, and a radical outlet coupled to the radical source. The radical outlet substantially faces a fresh surface of the material and is capable of passivating the material by directing the radicals to the fresh surface of the material.
[0007] In some embodiments, a method for coating a substrate in a vacuum chamber is provided. The method includes causing a phase change in a material in an alteration crucible, directing the altered material from the alteration crucible to a surface of the substrate, such that the altered material coats the surface of the substrate in a substantially uniform manner, generating radicals from at least one precursor gas, and directing the radicals to a surface of the altered material to passivate the material in a substantially uniform manner.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of the disclosure and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.
[0009] Figure 1 illustrates a schematic cross-sectional view of one implementation of a roll-to-roll (R2R) material deposition device incorporating a passivation source, according to some embodiments described herein. [0010] Figure 2 illustrates a schematic cross-sectional view of one implementation of a sheet deposition device incorporating a passivation source, according to some embodiments described herein.
[0011] Figure 3 illustrates a schematic view of a linear inductively coupled plasma (ICP) source, according to some embodiments described herein.
[0012] Figure 4 illustrates a schematic cross-sectional view of one implementation of a material deposition device incorporating an ultra-violet (UV) passivation source, according to some embodiments described herein.
[0013] Figure 5 illustrates a top plan view of a UV passivation source, according to some embodiments described herein.
[0014] Figure 6 illustrates a schematic cross-sectional view of one implementation of a roller deposition device, according to some embodiments described herein.
[0015] Figure 7 illustrates a schematic cross-sectional view of one implementation of a hydraulic deposition device, according to some embodiments described herein.
[0016] Figure 8 illustrates a schematic cross-sectional view of one implementation of a slot deposition device, according to some embodiments described herein.
[0017] Figure 9 illustrates a schematic cross-sectional view of one implementation of an atomized deposition device, according to some embodiments described herein.
[0018] Figure 10 is a flow diagram illustrating a method for coating a substrate, according to some embodiments described herein.
[0019] Figure 11 is a flow diagram illustrating a method for coating a substrate, according to some embodiments described herein.
[0020] Figure 12 is a flow diagram illustrating a method for coating a substrate, according to some embodiments described herein.
[0021] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
[0022] The disclosure generally relates to an alkali-metal containing devices and methods for manufacturing alkali-metal containing devices. More particularly, the disclosure relates to device stacks including lithium metal films and pre-lithiated anodes for energy storage devices and a methods for manufacturing the same.
[0023] Energy storage devices, for example, Li-ion batteries, typically include a positive electrode (e.g., cathode) and a negative electrode (e.g., anode) separated by a polymer separator with a liquid electrolyte. Solid-state batteries also typically include a positive electrode and a negative electrode but replace both the polymer separator and the liquid electrolyte with an ion-conducting material. Lithium may be deposited onto substrates by evaporating molten lithium or lithium vapor onto a substrate, such as a graphite coated copper foils, copper foils, or other suitable materials. Lithium may also be deposited onto substrates by sputtering or plating molten lithium or evaporated lithium onto a substrate, such as a graphite coated copper foils, copper foils, or other suitable materials. The substrates are maintained below a certain temperature as the lithium is being deposited on the front side of the substrates. After deposition, the lithium-coated substrate may be output for use in energy storage devices. Lithium is deposited to a thickness of at least 1 um to produce anodes for lithium ion batteries.
[0024] In some cases, the lithium freshly deposited onto the substrate is especially reactive with the surrounding atmosphere. When not kept in high vacuum or within an inert atmosphere, the fresh lithium rapidly reacts with the surrounding atmosphere creating undesirable compounds on the surface of the substrate (e.g., L2O, LisN). If these reactions are not uniformly mitigated across the deposited lithium prior to removing the substrate from the deposition vacuum chamber, throughput of viable substrates is reduced and subsequent battery performance can be severely degraded.
[0025] Embodiments of the present disclosure provide apparatus and methods for implementing a high vacuum (e.g., P < 5-4 torr) deposition system for depositing alkali metals or alloys of alkali metal, for example, lithium, on a substrate, and following the deposition of lithium onto the substrate, an in situ passivation process that enables rapid and uniform passivation across the surface of the substrate. Radicals (e.g., plasma radicals) generally increase chemical reaction rates, and radical sources are useful to create radicals in vacuum chemical processes. Embodiments presented herein utilize the increased chemical reaction rates facilitated by plasma radicals to passivate a lithium deposition surface soon after (e.g., immediately after) deposition. The alkali metal includes, for example, lithium metal, sodium, potassium, rubidium, cesium, francium, an alloy including the alkali metal, or a combination thereof.
[0026] It is noted that while the particular substrate on which some implementations described herein can be practiced is not limited, it is particularly beneficial to practice the implementations on substrates, including for example, webbased substrates, panels and discrete sheets. The substrate can also be in the form of a foil, a polymer film, or a thin plate.
[0027] The substrate can be or include plastic material, metallic material, metallized plastic or combinations thereof. Examples of suitable plastic materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), poly(methyl methacrylate) (PMMA), cellulose tri-acetate (TAC), polypropylene (PP), polyethylene (PE), polycarbonates (PC), bio degradable polymers such as Polyethylene 2,5-furandicarboxylate (PEF), multilayers thereof, or a combination thereof. Examples of suitable metallic materials include aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), manganese (Mn), chromium (Cr), stainless steel, clad materials, metallized plastic, paper, stainless steel, metal mesh, or a combination thereof. The substrate can include additional materials. For example, in some implementations a release layer is formed over or on the substrate. The release layer, which is formed in between the substrate and the alkali metal film, enables transfer of the alkali metal film from the substrate to another substrate. The release layer can be selected from one or more of fluorocarbons, silicone, latex, AIOx, LiF, AIOOH, Ag, AgF, Bi, Zn, Mg, Sn, or metal halides.
[0028] It is also noted here that a flexible substrate, film, or web as used within the implementations described herein can typically be characterized in that it is bendable. The term “web” can be synonymously used to the term “strip,” the term “flexible film,” the term “flexible substrate,” or the term “flexible conductive substrate.” For example, the web as described in implementations herein can be a polymer material.
[0029] It is further noted that the methods and systems described may be used in forming single-sided electrode structures and double-sided electrode structures.
[0030] Figure 1 illustrates a schematic cross-sectional view of one implementation of a roll-to-roll (R2R) material deposition device 100 incorporating a passivation source 108. The device 100 includes a substrate 104, one or more lithium deposition sources 112, a curved drum 106, an incoming substrate roll 102, an outgoing substrate roll 110, and a passivation source 108. The one or more lithium deposition sources 112 deposit the evaporated lithium 116 on the substrate 104 as it moves in a first direction D1 across the curved drum 106 continuously from the incoming substrate roll 102 to the outgoing substrate roll 110. One or more guide rolls 122 may help guide the substrate 104 as it is conveyed in the first direction D1 . The substrate 104 is conveyed over a curved surface of the drum 106 substantially facing the deposition source 112. After the evaporated lithium 116 is deposited on the substrate 104 at the curved drum 106, a plasma having one or more radical species, optionally mixed with a suitable inert gas, is generated from a precursor gas at the passivation source 108 or at a remote chamber coupled to the passivation source 108. The precursor gas may be carbon dioxide (CO2), sulfur hexafluoride (SFe), fluorocarbon (CxFy), carbon monoxide (CO), water vapor (H2O), hydrogen (H2), nitrogen dioxide (NO2), a combination thereof, or any other suitable precursor gas. The inert gas may be argon (Ar), CO2, Ar with H2O, CO2 with H2O, Ar with CO2, Ar with H2, CO2 with H2, Ar with oxygen (O2), Ar with CO, a combination thereof, or any other suitable precursor gas. The plasma radicals exit the passivation source 108 from a passivation source outlet 120 substantially facing a surface of the fresh lithium deposited on the substrate 104. The passivation source outlet 120 may be a gas distribution manifold or a tube having an array of holes, either of which creates a shower effect of plasma radicals distributed uniformly across the substrate 104. The plasma radicals spread across the surface of the fresh lithium deposited on the substrate 104 to generate mitigating and/or desirable lithium compounds on the surface of the substrate 104 which facilitates passivation of the substrate 104. In certain embodiments, fresh lithium is the lithium disposed on a substrate after the separation point of the substrate 104 from the deposition source 112, before the substrate 104 is removed from a high vacuum chamber 114.
[0031] In some embodiments, the passivation source 108 as described in Figure 1 may be arranged substantially facing the surface of the substrate 104 disposed directly after the separation point of the substrate 104 from the curved drum 106, such that the substrate 104 can be passivated before exiting the high vacuum chamber. The passivation source 108 may be an inductively coupled plasma (ICP) plasma source, a linear ICP plasma source, a remote plasma source (RPS), an ultra-violet (UV) source, an atmospheric pressure (ATM) plasma source, a gliding arc (GA) plasma source, or another suitable passivation source. In some embodiments, different coating materials can be deposited on the substrate 104 and passivated by the passivation source 108.
[0032] In some implementations, the deposition device 100 may include an alteration crucible 118 situated at or substantially coupled to the deposition source 112. The alteration crucible 118 causes a phase change in a lithium or other suitable material. The deposition source 112 directs the altered material to the surface of the substrate 104 as it moves over the surface of the curved drum 106. The alteration crucible 118 may be an evaporation crucible for evaporating lithium into a lithium vapor, an alteration crucible 118 for producing molten lithium, or an alteration crucible for atomizing lithium.
[0033] Figure 2 illustrates a schematic cross-sectional view of one implementation of a sheet material deposition device 200 incorporating a passivation source 206. The device 200 includes a one or more lithium deposition sources 204, an incoming substrate load lock 202, an outgoing substrate load lock (“unload lock”) 208, a passivation source 206, and a passivation source outlet 212. The device 200 is capable of supporting a substrate 210. The one or more lithium deposition sources 204 deposits evaporated lithium on the substrate 210 as it moves in a first direction D1 between the incoming substrate load lock 202 to the outgoing substrate load lock 208. The substrate 210 is conveyed between the incoming substrate load lock 202 to the outgoing substrate load lock 208 substantially facing the deposition source 112 and the passivation source 206. After the evaporated lithium 116 is deposited on the substrate 210 below the lithium deposition source 204, a plasma having one or more plasma radical species, optionally mixed with a suitable inert gas, is generated from a precursor gas at the passivation source 206 or at a remote chamber coupled to the passivation source 206. The precursor gas may be CO2, SFe, CxFy, CO, H2O, H2, NO2, a combination thereof, or any other suitable precursor gas. The inert gas may be Ar, CO2, Ar with H2O, CO2 with H2O, Ar with CO2, Ar with H2, CO2 with H2, Ar with O2, Ar with CO, a combination thereof, or any other suitable precursor gas. The plasma radicals exit the passivation source 206 from a passivation source outlet 212 substantially facing a surface of the fresh lithium deposited on the substrate 210. The passivation source outlet 212 may be a gas distribution manifold or a tube having an array of holes, either of which creates a shower effect of plasma radicals distributed uniformly across the substrate 210. These plasma radicals spread across the surface of the fresh lithium deposited on the substrate 210 and generate mitigating and/or desirable lithium compounds on the surface of the substrate 210 which facilitates passivation of the substrate 210. In certain embodiments, fresh lithium is the lithium disposed on the substrate 210 after the separation point of the substrate 210 from the deposition source 204, before the substrate 210 is removed from a high vacuum chamber 214.
[0034] In some embodiments, the passivation source 206 as described in Figure 2 may be arranged substantially facing the surface of the substrate 210 disposed directly after the separation point of the substrate 210 from the deposition source 204, such that the substrate 210 can be passivated before exiting the high vacuum chamber. The passivation source 206 may be an ICP plasma source, a linear ICP plasma source, a RPS, an UV source, an ATM plasma source, a GA plasma source, or another suitable passivation source. In some embodiments, different coating materials can be deposited on the substrate 210 and passivated by the passivation source 206.
[0035] In some implementations, the deposition device 200 includes an alteration crucible 216 situated at or substantially coupled to the deposition source 204. The alteration crucible 216 causes a phase change in a lithium or other suitable material. The deposition source 204 directs the altered material to the surface of the substrate 210 as it moves between the incoming substrate load lock 202 to the outgoing substrate load lock 208. The alteration crucible 216 may be an evaporation crucible for evaporating lithium into a lithium vapor, an alteration crucible 216 for producing molten lithium, or an alteration crucible 216 for atomizing lithium.
[0036] In some implementations, the passivation source 108 of Figure 1 and the passivation source 206 of Figure 206 is an ICP source. An ICP plasma source includes an energy supply sourced from electric currents produced by electromagnetic induction. ICP sources include general ICPs, RPSs, and linear ICPs, each of which may be implemented as a passivation source within any of the material deposition devices contemplated in embodiments described herein.
[0037] Generally, RPSs have a power supply utilizing a frequency of about 14 MHz (for example, 13.56 MHz, though other values are contemplated). In an RPS, plasma is created in an external generation housing separate from a release chamber where plasma radicals are released to a passivation target (e.g., fresh lithium disposed on a substrate). Neutral species, ions, and/or radicals flow from the external generation housing to the release chamber where they are directed toward the substrate via a manifold to uniformly disperse across a substrate. In some implementations, an RPS has a power supply coupled to an ICP antenna within an external housing and the ICP antenna generates the plasma radicals.
[0038] Figure 3 illustrates a schematic view of a linear inductively coupled plasma (ICP) source 300, which may be implemented as a passivation source within any of the material deposition devices contemplated in embodiments described herein. The ICP source 300 includes an ICP antenna 302, a dielectric window 304, one or more gas manifolds 306, a power supply 308, a housing 310, a first coupling component 312, and a second coupling component 314. The ICP antenna 302 is disposed within the housing 310 and is coupled to the power supply 308 via the first coupling component 312. The dielectric window 304 is disposed along a length of the housing 310 and is positioned substantially flush with the surface of the housing 310. The one or more gas manifolds 306 are disposed at edges 322 of the dielectric window 304. The housing 310 is coupled to the first coupling component 312 and the second coupling component 314, each of which are disposed coaxially at either end of the housing 310.
[0039] The ICP antenna 302 generates plasma radicals, via the power supply 308, within the housing 310 and delivers the plasma radicals to the surface of fresh lithium (or other material) across the dielectric window 304 via the gas manifolds 306. The dielectric window 304 is made of quartz or any other suitable material. The second coupling component 314 may optionally be a gas inlet for inert and precursor gas(es) described above with respect to Figures 1 and 2. In some implementations, the ICP source 300 generates soft plasma at a passivation source substantially facing a fresh material coating on a substrate. The proximity of the plasma source 300 reduces or eliminates deleterious effects (e.g. recombination, etc.) associated with transporting plasma radicals across multiple housings. In some implementations, the inside of the housing 310 is maintained at atmospheric pressure. The inside of the housing 310 may be purged with a circulating inert gas and the housing 310 may be cooled via a fluid.
[0040] Figure 4 illustrates a schematic cross-sectional view of one implementation of an UV passivation source 400. The passivation source 400 includes a UV lamp 402 and a showerhead 404. After the deposition material (e.g., lithium, or any other suitable material) is deposited onto a substrate 406, as the substrate 406 is conveyed around the drum 106 in the first direction D1 , the showerhead 404 acts as a precursor gas source for generating radicals. Precursor gas G1 exits the showerhead 404 through the holes 420 extending through the showerhead 404. The precursor gas G1 disperses across the UV lamp 402, receiving activation energy from the UV lamp 402 and generating radicals that dissipate evenly across the fresh material M1 on the substrate 406 to passivate the substrate 406. The showerhead 404 is a tube, manifold, or other gas distribution device having uniformly distributed holes 420, which delivers precursor gas G1 directly to the point where the material separates from the deposition source. The UV lamp 402 generates radicals when CO2 splits into CO and O after absorbing UV I ight/rad iation . The CO and O radicals generated at the UV lamp 402 are suitable to passivate the material previously deposited on the substrate 406. The precursor gas G1 dispensed from the showerhead 404 may be CO2, CO, H2O, H2, a combination thereof, or any other suitable precursor gas. The precursor gas G1 may be optionally mixed with any suitable inert gas, such an N2, Ar, He, or the like.
[0041] Figure 5 illustrates a top plan view of the UV lamp 402 as described in Figure 4. In one or more embodiments, the UV lamp 402 is a single tube 501 . The tube 501 has straight portions 502 and curved portions 504. The precursor gas G1 flows through the UV lamp 402 in the spaces S1 formed between the straight portions 502 of the tube 501 .
[0042] Figure 6 illustrates a schematic cross-sectional view of one implementation of a roller deposition device 600, which may be implemented in combination with any other embodiment described herein. The device 600 includes a doctor roll 602, a coating material 604, and a coating roller 606. The substrate 608 travels along a part travel direction 610 adjacent to the coating roller 606. The coating material 604 is lithium or any other suitable material. The entirety of the device 600 moves across a portion of the substrate 608 to be coated in the part travel direction 610 to cause the substrate 608 to be coated with the coating material 604. In other words, the coating roller 606 rolls across the substrate 608 in the part travel direction 610 to coat a substrate in molten lithium. The substrate 608 is composed of graphite coated copper, copper foil, or any other suitable material. After being coated by device 600, the substrate 608 is passivated according to any of the embodiments described herein.
[0043] Figure 7 illustrates a schematic cross-sectional view of one implementation of a hydraulic deposition device, which may be implemented in combination with any other embodiment described herein. The device 700 includes a plurality of rollers 702, a substrate 704, and a coating material 706. The substrate 704 moves through the rollers 702 in the first direction D1 via hydraulic forces, such that the substrate 704 makes contact with one of the plurality of rollers 702 that is disposed within a repository 708 for the coating material 706. In one embodiment, the repository 708 is a trough, tray, or other apparatus which has a volume that can be filled with the coating material 706. One roller of the plurality of rollers 702 lifts the coating material 706 to the substrate 704 as the substrate 704 comes into contact with the one roller of the plurality of rollers 702, coating the substrate 704 with the coating material 706. The coating material 706 includes lithium or any other suitable material. The substrate 704 is a graphite coated copper, copper foil, or any other suitable material. After being coated by device 700, the substrate 704 is passivated according to any of the embodiments described herein.
[0044] Figure 8 illustrates a schematic cross-sectional view of one implementation of a slot deposition device 800, which may be implemented in combination with any other embodiment described herein. The device 800 includes a coating material 802, a slot die 804, a vacuum chamber 806, a substrate 808, and a drum 810. The substrate 808 moves across the drum 810 in the first direction D1 , passing between the vacuum chamber 806 and the drum 810 to remove boundary layer air 820, and then passing between the slot die 804 and the drum 810 to deposit the coating material 802 onto the substrate 808 via the slot die 804. The coating material 802 includes lithium or any other suitable material. The substrate 808 is a graphite coated copper, copper foil, or any other suitable material. After being coated by device 800, the substrate 808 is passivated according to any of the embodiments described herein.
[0045] Figure 9A illustrates a schematic cross-sectional view of one implementation of an atomized deposition device 900 in the x direction, which may be implemented in combination with any other embodiment described herein. The device 900 includes a deposition module 912, one or more heaters 906 surrounding the deposition module 912, a cylinder 908 disposed within the deposition module 912, and a droplet return 910. A substrate 902 moves in a machine direction 914 and substantially faces a droplet path 904. The deposition module 912 generates and directs atomized material generated by the cylinder 908, and maintained by the heaters 906 towards the substrate 902 along the droplet path 904, coating the substrate 902 with the material. Remaining atomized material within the deposition module 912 falls away from the cylinder 908 along the droplet return 910 to be collected and returned to an alteration crucible (not shown). The material includes lithium or any other suitable material. The substrate 902 is graphite coated copper, copper foil, or any other suitable material. The cylinder 908 may be a sintered porous stainless steel cylinder. After being coated by device 900, the substrate 902 is passivated according to any of the embodiments described herein. Figure 9B illustrates a schematic cross-sectional view of one implementation of an atomized deposition device 900 in the z direction, which may be implemented in combination with any other embodiment described herein.
[0046] Figure 10 is a flow diagram illustrating a method 1000 for passivating a material disposed on a substrate according to embodiments described herein.
[0047] In operation 1002, a passivation source generates radicals from at least one precursor gas at a radical source. The radical source may include at least one of an ICP plasma source, a linear ICP plasma source, RPS, a UV source, an ATM source, and a GA plasma source. In one embodiment, an ICP plasma source is a vacuum ICP plasma source having a dielectric window disposed along a surface of a housing, and an inside of the housing is purged with a circulating inert gas and walls of the housing being cooled via a fluid. In one embodiment, the linear ICP plasma source includes a housing, an inside of the housing maintained at atmospheric pressure, a power supply coupled to an ICP antenna within the housing, the ICP antenna capable of generating the plasma radicals, a dielectric window disposed along the surface of the housing, and a plurality of manifolds disposed at edges of the dielectric window along the housing. The plurality of manifolds are capable of conveying the radicals to the surface of the material. In one embodiment, an RPS includes a power supply coupled to an ICP antenna within an external housing. The ICP antenna generates the radicals and a chamber housing is coupled to the external housing. The plasma radicals flow from the external housing to the chamber housing, and an outlet is disposed along or is coupled to a surface of the chamber housing. The outlet conveys the radicals in a substantially uniform manner to the surface of the material. In one embodiment, the UV source includes a showerhead facing the surface of the material. The showerhead conveys gas toward the surface of the material, and a UV lamp configured to generate radicals is disposed between the showerhead and the surface of the material.
[0048] In operation 1004, a passivation source provides the at least one precursor gas to the radical source via a precursor gas inlet. In one embodiment, the precursor gas includes at least one of: CO2, SFe, CxFy, CO, H2O, H2, NO2, or a combination thereof. In one embodiment, the precursor gas includes a mixture of the precursor gas with an inert gas. In one embodiment, the inert gas includes at least one of Ar, CO2, Ar with H2O, CO2 with H2O, Ar with CO2, Ar with H2, CO2 with H2, Ar with O2, or Ar with CO.
[0049] In operation 1006, a passivation source passivates the material by directing the radicals to the surface of the material via a radical outlet substantially facing a surface of a material deposited on a substrate
[0050] Figure 11 is a flow diagram illustrating a method 1100 for passivating a material disposed on a substrate according to embodiments described herein. [0051] In operation 1102, a deposition apparatus deposits material onto a substrate. In one embodiment, the deposition source includes at least one of a R2R coater, a roller coater, a hydraulic coater, a slot coater, or an atomized coater. In one embodiment, the deposition apparatus further includes a drum, and the substrate is conveyed over a curved surface of the drum substantially facing the deposition source. In one embodiment, the deposition apparatus further includes a load lock and an unload lock, and the substrate is conveyed from the load lock to the unload lock. In one embodiment, the deposition source is disposed between the load lock and the passivation source, substantially facing the surface of the substrate, and the passivation source is disposed between the passivation source and the unload lock, substantially facing the surface of the substrate.
[0052] In operation 1104, a deposition apparatus, including a passivation source, generates radicals from at least one precursor gas at a radical source. The plasma radical source includes at least one of an ICP plasma source, a linear ICP plasma source, RPS, a UV source, an ATM source, and a GA plasma source. In one embodiment, an ICP plasma source is a vacuum ICP plasma source having a dielectric window disposed along a surface of a housing. An inside of the housing is purged with a circulating inert gas and walls of the housing are cooled via a fluid. In one embodiment, the linear ICP plasma source includes a housing, an inside thereof maintained at atmospheric pressure, and a power supply coupled to an ICP antenna within the housing. The ICP antenna generates the plasma radicals. The ICP plasma source also include a dielectric window disposed along the surface of the housing, and a plurality of manifolds disposed at edges of the dielectric window along the housing. The plurality of manifolds conveys the plasma radicals to the surface of the material. In one embodiment, an RPS includes a power supply coupled to an ICP antenna within an external housing. The ICP antenna generates the radicals. A chamber housing is coupled to the external housing and radicals flow from the external housing to the chamber housing. An outlet is disposed along or coupled to a surface of the chamber housing and the outlet conveys the radicals in a substantially uniform manner to the surface of the material. In one embodiment, the UV source includes a showerhead facing the surface of the material and the showerhead conveys gas toward the surface of the material. A UV lamp configured to generate radicals is disposed between the showerhead and the surface of the material. [0053] In operation 1106, a deposition apparatus including a passivation source provides the at least one precursor gas to the radical source via a precursor gas inlet. In one embodiment, the precursor gas includes at least one of: CO2, SFe, CxFy, CO, H2O, H2, NO2, or a combination thereof. In one embodiment, the precursor gas includes a mixture of the precursor gas with an inert gas. In one embodiment, the inert gas includes at least one of Ar, CO2, Ar with H2O, CO2 with H2O, Ar with CO2, Ar with H2, CO2 with H2, Ar with O2, or Ar with CO.
[0054] In operation 1108, a deposition apparatus including a passivation source passivates the material by directing the radicals to the surface of the material via a radical outlet substantially facing a surface of a material deposited on a substrate.
[0055] Figure 12 is a flow diagram illustrating a method 1200 for passivating a material disposed on a substrate according to embodiments described herein.
[0056] In operation 1202, a deposition apparatus causes a phase change in a material in an alteration crucible. In one embodiment, the deposition apparatus evaporates the material in the alteration crucible. In one embodiment, the deposition apparatus atomizes the evaporated material. In one embodiment, deposition apparatus melts the material in the alteration crucible. In one embodiment, the deposition apparatus atomizes the melted material. In one embodiment, the substrate is conveyed in a machine direction extending from an inlet side to an outlet side of a drum. In one embodiment, the substrate is conveyed in machine direction extending from a load lock to an unload lock.
[0057] In operation 1204, a deposition apparatus directs the altered material from the alteration crucible to a surface of the substrate, such that the altered material coats the surface of the substrate in a substantially uniform manner.
[0058] In operation 1206, a deposition apparatus including a passivation source generates radicals from at least one precursor gas. In one embodiment, a passivation source generates the radicals comprising generating soft plasma radicals. In one embodiment, a passivation source generates UV radicals. [0059] In operation 1208, a deposition apparatus including a passivation source directs the radicals to a surface of the altered material to passivate the material in a substantially uniform manner.
[0060] Although only a few example embodiments have been described in detail, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the disclosed scope as described. Accordingly, all such modifications are intended to be included within the scope of this disclosure as defined in the following claims.
[0061] The following claims are not intended to be limited to the embodiments provided but rather are to be accorded the full scope consistent with the language of the claims.