WO2021217439A1 - Ultrasonic transducer, information acquisition element and electronic device - Google Patents

Abstract

Embodiments of the present application provide an ultrasonic transducer, an information acquisition element and an electronic device. The ultrasonic transducer comprises a vibrating diaphragm layer, a fixed supporting layer, a variable supporting layer and a substrate; the fixed supporting layer is fixedly connected to the vibrating diaphragm layer and is used for supporting the vibrating diaphragm layer; the variable supporting layer is arranged between the substrate and the vibrating diaphragm layer; when the variable supporting layer is in contact with the vibrating diaphragm layer, a first frequency is provided, and when the variable supporting layer is separated from the vibrating diaphragm layer, a second frequency is provided. The ultrasonic transducer can achieve multiple different working frequencies, thus improving the energy of transmitting signals and the sensitivity of receiving signals.

Description

Translated fromChinese

超声换能器、信息采集元件及电子设备Ultrasonic transducer, information acquisition component and electronic equipment技术领域Technical field

本申请实施例涉及电子信息技术领域，尤其涉及超声换能器、信息采集元件及电子设备。The embodiments of the present application relate to the field of electronic information technology, and in particular to ultrasonic transducers, information collection elements, and electronic equipment.

背景技术Background technique

超声换能器是将声能和电能互相转换的器件，超声换能器中的压电材料，在发生形变时两端可以产生电压差；在两端有电压差时，压电材料可以发生形变。利用压电材料的这种特性，可以实现机械振动和交流电的互相转换。Ultrasonic transducer is a device that converts sound energy and electrical energy. The piezoelectric material in the ultrasonic transducer can produce a voltage difference between both ends when deformed; when there is a voltage difference between both ends, the piezoelectric material can deform . Using this characteristic of piezoelectric materials, the mutual conversion of mechanical vibration and alternating current can be realized.

但是，传统的超声换能器体积较大，不能在一些便携式的移动终端上使用，随着微制造技术的发展，基于微机电系统(英文：Micro Electro Mechanical System，MEMS)技术的微加工超声换能器(英文：Micromachined Ultrasonic Transducer，MUT)在满足一定性能要求的基础上，减小了体积，但是，微加工超声换能器因为体积变小，与传统超声换能器相比，灵敏度较低。However, traditional ultrasonic transducers are large in size and cannot be used on some portable mobile terminals. With the development of micro-manufacturing technology, micro-machined ultrasonic transducers based on Micro Electro Mechanical System (MEMS) technology Transducer (English: Micromachined Ultrasonic Transducer, MUT) meets certain performance requirements and reduces the size. However, because of the smaller size of the micromachined ultrasonic transducer, the sensitivity is lower than that of the traditional ultrasonic transducer. .

不仅如此，发明人发现，对于超声换能器，在有些应用场合下，单一的工作频率是不能满足需求的，例如，对于有防伪要求的指纹系统，需要获取更多的生体特征，对于超声波，频率越高，波长越短，穿透能力越弱，但是分辨率越高，又需要有较高的工作频率，为了能够在识别指纹的同时提高穿透深度，单一的工作频率无法满足需求。Not only that, the inventor found that for ultrasonic transducers, in some applications, a single operating frequency cannot meet the requirements. For example, for fingerprint systems with anti-counterfeiting requirements, more biological characteristics need to be acquired. For ultrasonic, The higher the frequency, the shorter the wavelength, the weaker the penetration ability, but the higher the resolution, and a higher working frequency is required. In order to be able to identify fingerprints while increasing the penetration depth, a single working frequency cannot meet the demand.

发明内容Summary of the invention

有鉴于此，本申请实施例所解决的技术问题之一在于提供一种超声换能器、信息采集元件及电子设备，用以克服现有技术中超声换能器灵敏度较低以及只能提供单一频率的缺陷。In view of this, one of the technical problems solved by the embodiments of the present application is to provide an ultrasonic transducer, information acquisition element, and electronic equipment to overcome the low sensitivity of the ultrasonic transducer in the prior art and only provide a single Frequency defects.

第一方面，本申请实施例提供了一种超声换能器，包括：振膜层、固定支撑层、可变支撑层以及衬底；所述固定支撑层与所述振膜层固定连接，用于支撑所述振膜层；所述可变支撑层设置于所述衬底与所述振膜层之间，所述可变支撑层与所述振膜层接触时，以提供第一频率；所述可变支撑层与所述振膜层分开时，以提供第二频率。In the first aspect, an embodiment of the present application provides an ultrasonic transducer, including: a diaphragm layer, a fixed support layer, a variable support layer, and a substrate; the fixed support layer is fixedly connected to the diaphragm layer, and To support the diaphragm layer; the variable support layer is disposed between the substrate and the diaphragm layer, and when the variable support layer is in contact with the diaphragm layer, to provide a first frequency; When the variable support layer is separated from the diaphragm layer, a second frequency is provided.

可选地，所述振膜层依次包括第一上电极层、第一压电层、第一下电极层以及第一薄膜层；所述固定支撑层上表面与所述第一薄膜层固定连接；所述固定支撑层下表面与所述衬底固定连接。Optionally, the diaphragm layer sequentially includes a first upper electrode layer, a first piezoelectric layer, a first lower electrode layer, and a first thin film layer; the upper surface of the fixed support layer is fixedly connected to the first thin film layer ; The lower surface of the fixed support layer is fixedly connected to the substrate.

可选地，所述可变支撑层包括：第二下电极层，其设置在所述衬底上；第二压电层，其设置在所述第二下电极层上；第二上电极层，其设置在所述第二压电层上，且与所述第一薄膜层之间形成间隙，以使所述第二上电极层与所述第一薄膜层接触或分开；当所述第二上电极层与所述薄膜层通电时，所述第二上电极层与所述第一薄膜层接触，提供所述第一频率，所述第二上电极与所述第一薄膜层分开，提供所述第二频率。Optionally, the variable support layer includes: a second lower electrode layer, which is disposed on the substrate; a second piezoelectric layer, which is disposed on the second lower electrode layer; and a second upper electrode layer , Which is disposed on the second piezoelectric layer, and forms a gap with the first thin film layer, so that the second upper electrode layer is in contact with or separates from the first thin film layer; when the first When the two upper electrode layers are energized with the thin film layer, the second upper electrode layer is in contact with the first thin film layer to provide the first frequency, and the second upper electrode is separated from the first thin film layer, The second frequency is provided.

可选地，所述第一薄膜层、衬底与所述固定支撑层围合形成第一空腔,所述可变支撑层位于所述第一空腔内。Optionally, the first film layer, the substrate, and the fixed support layer are enclosed to form a first cavity, and the variable support layer is located in the first cavity.

可选地，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第二空腔。Optionally, the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a second cavity.

可选地，所述第一上电极层在所述衬底上的投影位于所述第二空腔内。Optionally, the projection of the first upper electrode layer on the substrate is located in the second cavity.

可选地，所述可变支撑层包括：第三支撑层，其设置在所述衬底上，第三下电极层，其设置在所述第三支撑层上；第三上电极层，其设置在所述第一薄膜层下，且与所述第三下电极层之间形成间隙；当所述第三上电极层与所述第三下电极层通电时，所述第三上电极层与所述第三下电极层接触，以提供所述第一频率，所述第三上电极与所述第三下电极层分开，以提供所述第二频率。Optionally, the variable support layer includes: a third support layer disposed on the substrate, a third lower electrode layer disposed on the third support layer; and a third upper electrode layer Is disposed under the first thin film layer and forms a gap with the third lower electrode layer; when the third upper electrode layer is energized with the third lower electrode layer, the third upper electrode layer It is in contact with the third lower electrode layer to provide the first frequency, and the third upper electrode is separated from the third lower electrode layer to provide the second frequency.

可选地，所述第一薄膜层、衬底与所述固定支撑层围合形成第一空腔。Optionally, the first thin film layer, the substrate and the fixed support layer are enclosed to form a first cavity.

可选地，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第二空腔。Optionally, the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a second cavity.

可选地，所述第一上电极层在所述衬底上的投影位于所述第二空腔内。Optionally, the projection of the first upper electrode layer on the substrate is located in the second cavity.

可选地，所述可变支撑层与所述固定支撑层间隔设置，且位于所述第一空腔的中心。Optionally, the variable support layer and the fixed support layer are spaced apart and located in the center of the first cavity.

可选地，所述超声换能器包括多个间隔设置在所述第一空腔内的可变支撑 层。Optionally, the ultrasonic transducer includes a plurality of variable support layers arranged at intervals in the first cavity.

可选地，所述振膜层包括第四上电极层和设置在所述第四上电极层下方的第四薄膜层；所述超声换能器还包括第四绝缘层和第四下电极层；所述第四下电极层设置在所述衬底上；所述第四绝缘层设置在所述第四下电极层上；所述固定支撑层上表面与所述第四薄膜层固定连接，所述固定支撑层下表面与与所述第四绝缘层或第四下电极层或衬底层之间。Optionally, the diaphragm layer includes a fourth upper electrode layer and a fourth thin film layer disposed under the fourth upper electrode layer; the ultrasonic transducer further includes a fourth insulating layer and a fourth lower electrode layer The fourth lower electrode layer is provided on the substrate; the fourth insulating layer is provided on the fourth lower electrode layer; the upper surface of the fixed support layer is fixedly connected to the fourth thin film layer, Between the lower surface of the fixed support layer and the fourth insulating layer or the fourth lower electrode layer or the substrate layer.

可选地，所述可变支撑层包括：第五下电极层，其设置在所述第四绝缘层上；第五压电层，其设置在所述第五下电极层上；第五上电极层，共设置在所述第五压电层上，且与所述第四薄膜层之间形成间隙，以使所述第五上电极层与所述第四膜层接触或分开；当所述第五上电极层与所述第四薄膜层通电时，所述第五上电极层与所述第四薄膜层接触，提供所述第一频率，所述第五上电极与所述第四薄膜层分开，提供所述第二频率。Optionally, the variable support layer includes: a fifth lower electrode layer, which is disposed on the fourth insulating layer; a fifth piezoelectric layer, which is disposed on the fifth lower electrode layer; and a fifth upper electrode layer. The electrode layer is arranged on the fifth piezoelectric layer and forms a gap with the fourth thin film layer so that the fifth upper electrode layer is in contact with or separated from the fourth thin film layer; When the fifth upper electrode layer is energized with the fourth thin film layer, the fifth upper electrode layer is in contact with the fourth thin film layer to provide the first frequency, and the fifth upper electrode is in contact with the fourth thin film layer. The film layers are separated to provide the second frequency.

可选地，所述第四薄膜层、第四绝缘层与所述固定支撑层围合形成第三空腔,所述可变支撑层位于所述第三空腔内。Optionally, the fourth film layer, the fourth insulating layer and the fixed support layer enclose a third cavity, and the variable support layer is located in the third cavity.

可选地，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第四空腔。Optionally, the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a fourth cavity.

可选地，所述第四上电极层在所述第四绝缘层上的投影位于所述第四空腔内。Optionally, the projection of the fourth upper electrode layer on the fourth insulating layer is located in the fourth cavity.

可选地，所述可变支撑层包括：第六支撑层，其设置在所述第四绝缘层上；第六下电极层，其设置在所述第六支撑层上；第六上电极层，其设置在所述第四薄膜层上，且与所述第六下电极之间形成间隙；当所述第六上电极层与所述第六下电极层通电时，所述第六上电极层与所述第六下电极层接触，以提供所述第一频率，所述第六上电极与所述第六下电极层分开，以提供所述第二频率。Optionally, the variable support layer includes: a sixth support layer, which is disposed on the fourth insulating layer; a sixth lower electrode layer, which is disposed on the sixth support layer; and a sixth upper electrode layer , Which is disposed on the fourth thin film layer and forms a gap with the sixth lower electrode; when the sixth upper electrode layer is energized with the sixth lower electrode layer, the sixth upper electrode The layer is in contact with the sixth lower electrode layer to provide the first frequency, and the sixth upper electrode is separated from the sixth lower electrode layer to provide the second frequency.

可选地，所述第四薄膜层、第四绝缘层与所述固定支撑层围合形成第三空腔。Optionally, the fourth thin film layer, the fourth insulating layer and the fixed support layer are enclosed to form a third cavity.

可选地，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成第四空腔。Optionally, the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a fourth cavity.

可选地，所述第四上电极层在所述第四绝缘层上的投影位于所述第四空腔内。Optionally, the projection of the fourth upper electrode layer on the fourth insulating layer is located in the fourth cavity.

可选地，所述可变支撑层与所述固定支撑层间隔设置，且位于所述第三空 腔的中心。Optionally, the variable support layer and the fixed support layer are spaced apart and located in the center of the third cavity.

可选地，所述超声换能器包括多个间隔设置在所述第三空腔内的可变支撑层。Optionally, the ultrasonic transducer includes a plurality of variable support layers arranged at intervals in the third cavity.

可选地，所述可变支撑层为磁致伸缩层材料。Optionally, the variable support layer is a magnetostrictive layer material.

可选地，所述超声换能器还包括线圈，其设置在所述振膜层上；所述可变支撑层与所述振膜层之间形成间隙；当所述线圈通电时，所述可变支撑层与所述振膜层接触，以提供所述第一频率，或者所述可变支撑层与所述振膜层分开，以提供所述第二频率。Optionally, the ultrasonic transducer further includes a coil arranged on the diaphragm layer; a gap is formed between the variable support layer and the diaphragm layer; when the coil is energized, the The variable support layer is in contact with the diaphragm layer to provide the first frequency, or the variable support layer is separated from the diaphragm layer to provide the second frequency.

可选地，所述可变支撑层为可支撑材料。Optionally, the variable support layer is a supportable material.

可选地，所述超声换能器还包括线圈以及刚体磁性薄膜，所述线圈设置在所述振膜层上；所述刚体磁性薄膜设置在振膜层内；所述可变支撑层与所述振膜层之间形成间隙；当所述线圈通电时，所述刚体磁性薄膜使所述振膜层振动，所述可变支撑层与所述振膜层接触，以提供所述第一频率，或者所述可变支撑层与所述振膜层分开，以提供所述第二频率。Optionally, the ultrasonic transducer further includes a coil and a rigid magnetic film, the coil is arranged on the diaphragm layer; the rigid magnetic film is arranged in the diaphragm layer; the variable support layer is connected to the A gap is formed between the diaphragm layers; when the coil is energized, the rigid magnetic film vibrates the diaphragm layer, and the variable support layer is in contact with the diaphragm layer to provide the first frequency , Or the variable support layer is separated from the diaphragm layer to provide the second frequency.

可选地，所述第一上电极层的面积为所述第一空腔横截面积的0.5倍、0.6倍或者0.7倍。Optionally, the area of the first upper electrode layer is 0.5 times, 0.6 times or 0.7 times the cross-sectional area of the first cavity.

可选地，所述第四上电极层的面积为所述第三空腔横截面积的0.5倍、0.6倍或者0.7倍。Optionally, the area of the fourth upper electrode layer is 0.5 times, 0.6 times or 0.7 times the cross-sectional area of the third cavity.

第二方面，本申请实施例提供一种信息采集元件，包括如第一方面或第一方面的任意一个实施例中所描述的超声换能器。In the second aspect, an embodiment of the present application provides an information collection element, including the ultrasonic transducer as described in the first aspect or any one of the first aspects.

可选地，在本申请的一个实施例中，信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器。Optionally, in an embodiment of the present application, the information acquisition element is a microphone, an ultrasonic radar, an ultrasonic imaging device, an ultrasonic fingerprint acquisition device, or a proximity sensor.

第三方面，本申请实施例提供一种电子设备，包括如第一方面或第一方面的任意一个实施例中所描述的超声换能器。In a third aspect, an embodiment of the present application provides an electronic device, including the ultrasonic transducer as described in the first aspect or any one of the first aspects.

可选地，在本申请的一个实施例中，电子设备包括超声换能器阵列，超声换能器阵列是由至少两个如第一方面或第一方面的任意一个实施例中所描述的超声换能器组成的阵列。Optionally, in an embodiment of the present application, the electronic device includes an ultrasound transducer array, and the ultrasound transducer array is composed of at least two ultrasound transducers as described in the first aspect or any one of the embodiments of the first aspect. An array of transducers.

本申请实施例提供的超声换能器、信息采集元件及电子设备，通过改变可变支撑层的高度，实现可变支撑层与振膜层接触和分开，超声换能器能实现有多个不同的工作频率，提高了发射信号的能量以及接收信号的灵敏度。The ultrasonic transducer, information acquisition element, and electronic equipment provided by the embodiments of the present application realize the contact and separation of the variable support layer and the diaphragm layer by changing the height of the variable support layer, and the ultrasonic transducer can achieve multiple differences. The working frequency improves the energy of the transmitted signal and the sensitivity of the received signal.

附图说明Description of the drawings

后文将参照附图以示例性而非限制性的方式详细描述本申请实施例的一些具体实施例。附图中相同的附图标记标示了相同或类似的部件或部分。本领域技术人员应该理解，这些附图未必是按比例绘制的。附图中：Hereinafter, some specific embodiments of the embodiments of the present application will be described in detail in an exemplary but not restrictive manner with reference to the accompanying drawings. The same reference numerals in the drawings indicate the same or similar components or parts. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the attached picture:

图1为本申请第一实施例提供的一种超声换能器的纵截面示意图；Fig. 1 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the first embodiment of the application;

图2为本申请第二实施例提供的一种超声换能器的纵截面示意图；2 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a second embodiment of this application;

图3为本申请第三实施例提供的一种超声换能器的纵截面示意图；3 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the third embodiment of this application;

图4为本申请第四实施例提供的一种超声换能器的纵截面示意图；4 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the fourth embodiment of this application;

图5为本申请第五实施例提供的一种超声换能器的纵截面示意图；5 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a fifth embodiment of this application;

图6为本申请第六实施例提供的一种超声换能器的纵截面示意图；6 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a sixth embodiment of this application;

图7为本申请另一实施例提供的一种超声换能器的纵截面示意图；FIG. 7 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by another embodiment of the application;

图8为本申请另一实施例提供的一种超声换能器的纵截面示意图；FIG. 8 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by another embodiment of the application;

图9为本申请另一实施例提供的一种超声换能器的纵截面示意图；9 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by another embodiment of the application;

图10为本申请另一实施例提供的一种超声换能器的纵截面示意图；10 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by another embodiment of the application;

图11为本申请实施例提供的一种超声换能器的俯视图；Figure 11 is a top view of an ultrasonic transducer provided by an embodiment of the application;

图12为本申请实施例提供的分形设计的超声换能器的纵截面示意图；12 is a schematic longitudinal cross-sectional view of an ultrasonic transducer with a fractal design provided by an embodiment of the application;

图13为本申请实施例提供的分形设计的超声换能器的俯视图；FIG. 13 is a top view of an ultrasonic transducer with a fractal design provided by an embodiment of the application;

图14为本申请实施例提供的一种超声指纹采集的示意图；FIG. 14 is a schematic diagram of ultrasonic fingerprint collection provided by an embodiment of this application;

图15为本申请实施例提供的一种接近传感器的纵截面示意图；15 is a schematic longitudinal cross-sectional view of a proximity sensor provided by an embodiment of the application;

图16为本申请实施例提供的一种电子设备的结构图。FIG. 16 is a structural diagram of an electronic device provided by an embodiment of this application.

具体实施方式Detailed ways

本申请实施例的任一技术方案必不一定需要同时达到以上的所有优点。Any technical solution of the embodiments of the present application does not necessarily need to achieve all the above advantages at the same time.

为了使本领域的人员更好地理解本申请实施例中的技术方案，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请实施例一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员所获得的所有其他实施例，都应当属于本申请实施例保护的范围。In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the description The embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art should fall within the protection scope of the embodiments of the present application.

本申请提供一种超声换能器，包括：振膜层、固定支撑层、可变支撑层以及衬底；所述固定支撑层设置在所述衬底上，且与所述振膜层固定连接，用于支撑所述振膜层。所述可变支撑层设置于所述衬底与所述振膜层之间，所述可变支撑层与所述振膜层接触时，以提供第一频率，所述可变支撑层与所述振膜层分开时，以提供第二频率。本申请方案结构简单，在不影响空间分辨率的基础上，实现超声换能器在多工作频率下发射和接收信号，并提高了发射信号的能量以及接收信号的灵敏度。The present application provides an ultrasonic transducer, including: a diaphragm layer, a fixed support layer, a variable support layer, and a substrate; the fixed support layer is arranged on the substrate and is fixedly connected to the diaphragm layer , Used to support the diaphragm layer. The variable support layer is disposed between the substrate and the diaphragm layer, and when the variable support layer is in contact with the diaphragm layer, a first frequency is provided. When the diaphragm layer is separated, the second frequency is provided. The solution of the present application has a simple structure and realizes that the ultrasonic transducer transmits and receives signals at multiple operating frequencies on the basis of not affecting the spatial resolution, and improves the energy of the transmitted signal and the sensitivity of the received signal.

下面结合本申请实施例附图进一步说明本申请实施例具体实现。The specific implementation of the embodiments of the present application will be further described below in conjunction with the drawings of the embodiments of the present application.

图1为本申请第一实施例提供的一种超声换能器的纵截面示意图。本申请实施例的可变支撑层应用于压电式MEMS超声波换能器，以1个可变支撑层为例进行说明，如图1所示，该超声换能器100包括：振膜层10，固定支撑层11，衬底13和可变支撑层12。FIG. 1 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the first embodiment of the application. The variable support layer of the embodiment of the present application is applied to a piezoelectric MEMS ultrasonic transducer. A variable support layer is taken as an example for description. As shown in FIG. 1, theultrasonic transducer 100 includes: adiaphragm layer 10 , The fixedsupport layer 11, thesubstrate 13 and thevariable support layer 12.

其中，振膜层10依次包括第一上电极层101，第一压电层102，第一下电极层103以及第一薄膜层104。固定支撑层11的上表面与第一薄膜层104固定连接，固定支撑层11的下表面与衬底13固定连接。所述第一薄膜层104、衬底13与所述固定支撑层11围合形成第一空腔111。固定支撑层12的高度为第一空腔111的高度。Thediaphragm layer 10 includes a firstupper electrode layer 101, a firstpiezoelectric layer 102, a firstlower electrode layer 103, and a firstthin film layer 104 in sequence. The upper surface of the fixedsupport layer 11 is fixedly connected with thefirst film layer 104, and the lower surface of the fixedsupport layer 11 is fixedly connected with thesubstrate 13. The firstthin film layer 104, thesubstrate 13 and the fixedsupport layer 11 are enclosed to form afirst cavity 111. The height of the fixedsupport layer 12 is the height of thefirst cavity 111.

所述可变支撑层12位于所述第一空腔111内，且设置在所述固定支撑层11的内侧面，所述可变支撑层12围合形成一个第二空腔112。可变支撑层12的高度小于固定支撑层11的高度。可变支撑层12包括第二上电极层121，第二压电层122以及第二下电极123。第二下电极层123设置在衬底13上，第二压电层122设置在第二下电极层123上，第二上电极层121设置在第二压电层122上，且第二上电极层121与第一薄膜层104之间形成间隙，以使在通电情况下第二上电极层121与第一薄膜层104接触或分开。当所述第二上电极层121与所述薄膜层104通电时，所述第二上电极层121与所述第一薄膜层104接触，以提供所述第一频率，所述第二上电极121与所述第一薄膜层104分开，以提供一个不同所述第一工作频率的所述第二频率。The variable supportinglayer 12 is located in thefirst cavity 111 and arranged on the inner side of the fixed supportinglayer 11, and the variable supportinglayer 12 encloses asecond cavity 112. The height of thevariable support layer 12 is smaller than the height of the fixedsupport layer 11. Thevariable support layer 12 includes a secondupper electrode layer 121, a secondpiezoelectric layer 122 and a secondlower electrode 123. The secondlower electrode layer 123 is disposed on thesubstrate 13, the secondpiezoelectric layer 122 is disposed on the secondlower electrode layer 123, the secondupper electrode layer 121 is disposed on the secondpiezoelectric layer 122, and the second upper electrode A gap is formed between thelayer 121 and the firstthin film layer 104, so that the secondupper electrode layer 121 is in contact with or separated from the firstthin film layer 104 when the power is applied. When the secondupper electrode layer 121 and thethin film layer 104 are energized, the secondupper electrode layer 121 contacts the firstthin film layer 104 to provide the first frequency, and the secondupper electrode 121 is separated from thefirst film layer 104 to provide the second frequency different from the first operating frequency.

在本实施例中，所述第一上电极层101在所述衬底上13的投影位于所述第二空腔112内，可以提高发射信号的能量和接收信号的灵敏度。第一压电层102和第二压电层122由压电材料制成，第一薄膜层104的材料可是硅、氧化硅或者氮化硅等材料，或者也可以是它们的叠层。在另一种实施例的情况下， 第一薄膜层104的材料也可以是电极材料，此时可以省去第二上电极层121，第一薄膜层104可以充当第二上电极层121使用。超声换能器100的各叠层结构可以是平面薄膜，也可以是预弯曲薄膜。超声换能器100的工作频率与空腔横截面积成反比，第一薄膜层104与可变支撑层12分开时，空腔横截面积为第一空腔111横截面积，此时为超声换能器100提供低频；第一薄膜层104与可变支撑层12接触时，空腔横截面积为第二空腔112横截面积，此时为超声换能器100提供高频。第一上电极层101的横截面积为此时第一空腔111横截面积的0.5倍、0.6倍或者0.7倍，这样设置能够进一步提高发射信号的能力和接收信号的灵敏度。当然，也可以牺牲部分性能而不这么设置。In this embodiment, the projection of the firstupper electrode layer 101 on thesubstrate 13 is located in thesecond cavity 112, which can improve the energy of the transmitted signal and the sensitivity of the received signal. The firstpiezoelectric layer 102 and the secondpiezoelectric layer 122 are made of piezoelectric materials, and the material of the firstthin film layer 104 may be materials such as silicon, silicon oxide, or silicon nitride, or may be a stack of them. In the case of another embodiment, the material of the firstthin film layer 104 can also be an electrode material. In this case, the secondupper electrode layer 121 can be omitted, and the firstthin film layer 104 can be used as the secondupper electrode layer 121. Each laminated structure of theultrasonic transducer 100 may be a flat film or a pre-curved film. The working frequency of theultrasonic transducer 100 is inversely proportional to the cross-sectional area of the cavity. When thefirst film layer 104 is separated from thevariable support layer 12, the cross-sectional area of the cavity is the cross-sectional area of thefirst cavity 111, which is the ultrasonic Thetransducer 100 provides a low frequency; when thefirst film layer 104 is in contact with thevariable support layer 12, the cross-sectional area of the cavity is the cross-sectional area of thesecond cavity 112, and at this time, theultrasonic transducer 100 is provided with a high frequency. The cross-sectional area of the firstupper electrode layer 101 is 0.5, 0.6, or 0.7 times the cross-sectional area of thefirst cavity 111 at this time. Such a configuration can further improve the ability of transmitting signals and the sensitivity of receiving signals. Of course, you can also sacrifice part of the performance instead of this setting.

本申请实施例的可变支撑层应用于压电式MEMS超声波换能器，为超声换能器提供了两个不同的工作频率，例如将所述超声换能器100应用于光学指纹识别装置时，可根据光学指纹识别装置在指纹识别与防伪时分别对工作频率的不同需求，提供不同的工作频率。当进行指纹识别时，为所述超声换能器100需要提供高频工作频率，当进行指纹防伪时，由于需要使超声波能穿过手指，获得其他活体信号，此时，需要所述超声换能器100提供低频信号。即本申请实施例提供的所述超声换能器100能满足光学指纹对于高频和低频的需求。The variable support layer of the embodiment of the present application is applied to a piezoelectric MEMS ultrasonic transducer, and provides two different working frequencies for the ultrasonic transducer. For example, when theultrasonic transducer 100 is applied to an optical fingerprint recognition device , According to the different requirements of the optical fingerprint identification device on the operating frequency of fingerprint identification and anti-counterfeiting, different operating frequencies can be provided. When performing fingerprint recognition, theultrasonic transducer 100 needs to provide a high-frequency working frequency. When performing fingerprint anti-counterfeiting, because the ultrasonic wave can pass through the finger to obtain other living body signals, theultrasonic transducer 100 is required at this time. Thedevice 100 provides a low frequency signal. That is, theultrasonic transducer 100 provided in the embodiment of the present application can meet the requirements of optical fingerprints for high frequency and low frequency.

本申请提供的所述超声换能器100，方案结构简单，在不影响空间分辨率的基础上，实现超声换能器既能在低频下发射或接收信号，又能在高频下发射和接收信号，提高了发射信号的能量以及接收信号的灵敏度。Theultrasonic transducer 100 provided in the present application has a simple structure, and realizes that the ultrasonic transducer can transmit or receive signals at low frequencies and transmit and receive signals at high frequencies without affecting the spatial resolution. The signal improves the energy of the transmitted signal and the sensitivity of the received signal.

图2为本申请第二实施例提供的一种超声换能器的纵截面示意图。本申请实施例的可变支撑层应用于压电式MEMS超声波换能器，与上述第一实施例不同之处在于，提供了另一种不同的可变支撑层结构。相同之处本申请实施例不再详细描述。可变支撑层22包括第三上电极层221，第三下电极222、第三绝缘层(附图未示出)以及第三支撑层223。第三绝缘层位于第三上电极层221的下表面或者第三绝缘层位于第三下电极层222的上表面。第三支撑层223由可 支撑材料制成，例如可以是非金属材料，也可以是金属材料。第三支撑层223设置在所述衬底13上，第三下电极层222设置在第三支撑层223的上方，第三上电极层221设置在第一薄膜层104的下方且与第三下电极层222之间形成间隙；当所述第三上电极层221与所述第三下电极层222通电时，所述第三上电极层221与第三下电极层222接触，以提供第一工作频率，所述第三上电极221与所述第三下电极层222分开时，以提供第二工作频率。本申请实施例中，可变支撑层22与振膜层10接触或分开指的是第三上电极层221和第三下电极层222接触或分开。具体的，第三上电极层221和第三下电极层222分开时，为超声换能器100提供低频；第三上电极层221和第三下电极层222接触时，为超声换能器100提供高频。在另一种实施例的情况下，第一薄膜层104的材料也可以是电极材料，此时可以省去第三上电极层221，第一薄膜层104可以充当第三上电极层221使用。本申请方案结构简单，在不影响空间分辨率的基础上，实现超声换能器100在低频和高频下发射和接收信号，提高了发射信号的能量以及接收信号的灵敏度。Fig. 2 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a second embodiment of the application. The variable support layer of the embodiment of the present application is applied to a piezoelectric MEMS ultrasonic transducer. The difference from the above-mentioned first embodiment is that another different variable support layer structure is provided. The similarities are not described in detail in the embodiments of the present application. Thevariable support layer 22 includes a thirdupper electrode layer 221, a thirdlower electrode 222, a third insulating layer (not shown in the drawings), and athird support layer 223. The third insulating layer is located on the lower surface of the thirdupper electrode layer 221 or the third insulating layer is located on the upper surface of the thirdlower electrode layer 222. Thethird support layer 223 is made of a supportable material, for example, it may be a non-metallic material or a metallic material. Thethird support layer 223 is disposed on thesubstrate 13, the thirdlower electrode layer 222 is disposed above thethird support layer 223, and the thirdupper electrode layer 221 is disposed below the firstthin film layer 104 and is in contact with the third lower electrode layer. A gap is formed between the electrode layers 222; when the thirdupper electrode layer 221 and the thirdlower electrode layer 222 are energized, the thirdupper electrode layer 221 is in contact with the thirdlower electrode layer 222 to provide a first Operating frequency, when the thirdupper electrode 221 is separated from the thirdlower electrode layer 222, a second operating frequency is provided. In the embodiment of the present application, that thevariable support layer 22 is in contact with or separated from thediaphragm layer 10 refers to that the thirdupper electrode layer 221 and the thirdlower electrode layer 222 are in contact with or separated. Specifically, when the thirdupper electrode layer 221 and the thirdlower electrode layer 222 are separated, they provide a low frequency for theultrasonic transducer 100; when the thirdupper electrode layer 221 and the thirdlower electrode layer 222 are in contact, they are theultrasonic transducer 100. Provide high frequency. In the case of another embodiment, the material of the firstthin film layer 104 may also be an electrode material. In this case, the thirdupper electrode layer 221 may be omitted, and the firstthin film layer 104 may be used as the thirdupper electrode layer 221. The solution of the present application has a simple structure and realizes that theultrasonic transducer 100 transmits and receives signals at low and high frequencies without affecting the spatial resolution, thereby improving the energy of the transmitted signal and the sensitivity of the received signal.

图3为本申请第三实施例提供的一种超声换能器的纵截面示意图。本申请实施例的可变支撑层应用于压电式MEMS超声波换能器，与上述第一实施例不同之处在于，提供了另一种不同的可变支撑层的设置位置，相同之处本申请实施例不再详细描述。可变支撑层12与固定支撑层11间隔设置，且位于所述第一空腔111的中心。所述第一上电极层101在所述衬底13上的投影位于所述第一空腔111内且位于可变支撑层12与固定支撑层11间隔之间。Fig. 3 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a third embodiment of the application. The variable support layer of the embodiment of the present application is applied to a piezoelectric MEMS ultrasonic transducer. The difference from the above-mentioned first embodiment is that another different arrangement position of the variable support layer is provided. The application embodiment will not be described in detail. Thevariable support layer 12 and the fixedsupport layer 11 are spaced apart and located in the center of thefirst cavity 111. The projection of the firstupper electrode layer 101 on thesubstrate 13 is located in thefirst cavity 111 and between the gap between thevariable support layer 12 and the fixedsupport layer 11.

在另一种实施例中，图3中的可变支撑层12的结构可以换作图2中的可支撑层22的结构。In another embodiment, the structure of thevariable support layer 12 in FIG. 3 can be replaced with the structure of thesupportable layer 22 in FIG. 2.

图4为本申请第四实施例提供的一种超声换能器的纵截面示意图。本申请实施例的可变支撑层应用于压电式MEMS超声波换能器，与上述第一实施例不同之处在于，本申请实施例提供了多个间隔设置在第一空腔111内的可变支撑层12。超声换能器100可以实现多个不同的频率，至少一个所述可变支撑层12的第二上电极层121和所述第一薄膜层104接触或分开。例如，当可变支撑层12设置为N(N>2)个的时候，超声换能器100可以有N+1个不同的频率。根据对多个频率的不同需求，可以设置不同数目的可变支撑层12。如图4所示，以设置3个可变支撑层12为例，超声换能器100可以实现4种不同的频率。本申请方案结构简单，在不影响空间分辨率的基础上，为超声换能器100提供多种不同频率，提高了发射信号的能量以及接收信号的灵敏度。4 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the fourth embodiment of this application. The variable support layer of the embodiment of the present application is applied to a piezoelectric MEMS ultrasonic transducer. The difference from the above-mentioned first embodiment is that the embodiment of the present application provides a plurality of options arranged at intervals in the first cavity 111.变Support layer12. Theultrasonic transducer 100 can realize a plurality of different frequencies, and at least one of the secondupper electrode layer 121 of thevariable support layer 12 and the firstthin film layer 104 are in contact with or separated from each other. For example, when the number of variable support layers 12 is set to N (N>2), theultrasonic transducer 100 may have N+1 different frequencies. According to different requirements for multiple frequencies, different numbers of variable support layers 12 can be provided. As shown in FIG. 4, taking three variable support layers 12 as an example, theultrasonic transducer 100 can implement four different frequencies. The solution of the present application has a simple structure, and provides multiple different frequencies for theultrasonic transducer 100 on the basis of not affecting the spatial resolution, which improves the energy of the transmitted signal and the sensitivity of the received signal.

在另一种实施例中，图4中的可变支撑层12的结构可以换作图2中的可支撑层22的结构。In another embodiment, the structure of thevariable support layer 12 in FIG. 4 can be replaced with the structure of thesupportable layer 22 in FIG. 2.

图5为本申请第五实施例提供的一种超声换能器的纵截面示意图；本申请实施例的可变支撑层应用于电容式MEMS超声波换能器，以1个可变支撑层为例进行说明，如图5所示，该超声换能器100包括：振膜层、可变支撑层52、固定支撑层51、第四绝缘层54、第四下电极层55以及衬底53。其中振膜层包括第四上电极层501和设置在所述第四上电极层501下方的第四薄膜层504。固定支撑层51的上表面与第四薄膜层504固定连接，固定支撑层51的下表面与第四绝缘层54固定连接。可变支撑层52的高度小于固定支撑层51的高度，固定支撑层51的高度为第三空腔211的高度。可变支撑层51包括第五上电极层521，第五压电层522以及第五下电极523。第五上电极层521和第五下电极层523分别固定于第五支撑层522的上方和下方。第五下电极层523设置在第 四绝缘层54上，第五压电层522设置在第五下电极层523上，第五上电极层521设置在第五压电层522上，且第五上电极层521与第四薄膜层504之间形成间隙，以使在通电情况下第五上电极层521与第四薄膜层504接触或分开。当所述第五上电极层521与所述第四薄膜层504通电时，所述第五上电极层521与所述第四薄膜层504接触，提供所述第一频率，所述第五上电极521与所述第四薄膜层504分开，提供所述第二频率。所述第四薄膜层504、第四绝缘层54与所述固定支撑层51围合形成第三空腔211,所述可变支撑层52位于所述第三空腔211内。所述可变支撑层52设置在所述固定支撑层51的内侧面，且所述可变支撑层52围合形成一个第四空腔212。所述第五上电极层521在所述第四绝缘层54的投影位于所述第四空腔212内，可以提高发射信号的能量和接收信号的灵敏度。第五压电层522由压电材料制成，第四薄膜层504的材料可是硅、氧化硅或者氮化硅等材料，或者也可以是它们的叠层。在另一种实施例的情况下，第四薄膜层504的材料也可以是电极材料，此时可以省去第五上电极层521，第四薄膜层504可以充当第五上电极层521使用。超声换能器100的各叠层结构可以是平面薄膜，也可以是预弯曲薄膜。超声换能器100的工作频率与空腔面积成反比，第四薄膜层504与可变支撑层52分开时，空腔面积为第三空腔211面积，此时为超声换能器100提供低频；第四薄膜层504与可变支撑层52接触时，空腔面积为第四空腔212面积，此时为超声换能器100提供高频。第四上电极层501的面积为此时第三空腔211横截面积的0.5倍、0.6倍或者0.7倍，这样设置能够进一步提高发射信号的能力和接收信号的灵敏度。当然，也可以牺牲部分性能而不这么设置。FIG. 5 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by the fifth embodiment of the application; the variable support layer of the embodiment of the application is applied to a capacitive MEMS ultrasonic transducer, taking one variable support layer as an example To illustrate, as shown in FIG. 5, theultrasonic transducer 100 includes: a diaphragm layer, avariable support layer 52, a fixedsupport layer 51, a fourth insulatinglayer 54, a fourthlower electrode layer 55 and asubstrate 53. The diaphragm layer includes a fourthupper electrode layer 501 and a fourththin film layer 504 disposed under the fourthupper electrode layer 501. The upper surface of the fixedsupport layer 51 is fixedly connected to thefourth film layer 504, and the lower surface of the fixedsupport layer 51 is fixedly connected to the fourth insulatinglayer 54. The height of thevariable support layer 52 is smaller than the height of the fixedsupport layer 51, and the height of the fixedsupport layer 51 is the height of thethird cavity 211. Thevariable support layer 51 includes a fifthupper electrode layer 521, a fifthpiezoelectric layer 522 and a fifthlower electrode 523. The fifthupper electrode layer 521 and the fifthlower electrode layer 523 are fixed above and below thefifth support layer 522, respectively. The fifthlower electrode layer 523 is disposed on the fourth insulatinglayer 54, the fifthpiezoelectric layer 522 is disposed on the fifthlower electrode layer 523, the fifthupper electrode layer 521 is disposed on the fifthpiezoelectric layer 522, and the fifthpiezoelectric layer 522 is disposed on the fifthpiezoelectric layer 522. A gap is formed between theupper electrode layer 521 and the fourththin film layer 504, so that the fifthupper electrode layer 521 and the fourththin film layer 504 are in contact with or separated from each other under the power-on condition. When the fifthupper electrode layer 521 and the fourththin film layer 504 are energized, the fifthupper electrode layer 521 is in contact with the fourththin film layer 504 to provide the first frequency, and the fifth upper electrode layer Theelectrode 521 is separated from thefourth film layer 504 to provide the second frequency. Thefourth film layer 504, the fourth insulatinglayer 54 and the fixedsupport layer 51 enclose athird cavity 211, and thevariable support layer 52 is located in thethird cavity 211. The variable supportinglayer 52 is disposed on the inner side of the fixed supportinglayer 51, and the variable supportinglayer 52 encloses to form afourth cavity 212. The projection of the fifthupper electrode layer 521 on the fourth insulatinglayer 54 is located in thefourth cavity 212, which can improve the energy of the transmitted signal and the sensitivity of the received signal. The fifthpiezoelectric layer 522 is made of piezoelectric material, and the material of the fourththin film layer 504 may be silicon, silicon oxide, silicon nitride, or other materials, or may be a stack of them. In the case of another embodiment, the material of the fourththin film layer 504 can also be an electrode material. In this case, the fifthupper electrode layer 521 can be omitted, and the fourththin film layer 504 can be used as the fifthupper electrode layer 521. Each laminated structure of theultrasonic transducer 100 may be a flat film or a pre-curved film. The working frequency of theultrasonic transducer 100 is inversely proportional to the cavity area. When thefourth membrane layer 504 is separated from thevariable support layer 52, the cavity area is the area of thethird cavity 211. At this time, theultrasonic transducer 100 is provided with a low frequency When thefourth film layer 504 is in contact with thevariable support layer 52, the area of the cavity is the area of thefourth cavity 212, which provides high frequency for theultrasonic transducer 100 at this time. The area of the fourthupper electrode layer 501 is 0.5 times, 0.6 times, or 0.7 times the cross-sectional area of thethird cavity 211 at this time. Such a setting can further improve the ability of transmitting signals and the sensitivity of receiving signals. Of course, you can also sacrifice part of the performance instead of this setting.

在另一种实施例中，图5中的可变支撑层52和第四上电极层501的设置 位置类似于图3可变支撑层12和第一上电极层101的位置放置，可变支撑层52与固定支撑层51间隔设置，且位于所述第三空腔211的中心。所述第一上电极层501在所述第四绝缘层54上的投影位于所述第三空腔211内且位于可变支撑层52与固定支撑层51间隔之间。In another embodiment, the positions of thevariable support layer 52 and the fourthupper electrode layer 501 in FIG. 5 are similar to the positions of thevariable support layer 12 and the firstupper electrode layer 101 in FIG. Thelayer 52 is spaced apart from the fixedsupport layer 51 and is located in the center of thethird cavity 211. The projection of the firstupper electrode layer 501 on the fourth insulatinglayer 54 is located in thethird cavity 211 and between the gap between thevariable support layer 52 and the fixedsupport layer 51.

可以理解的是，所述可变支撑层52也不限于一个，也可以设置多个，例如，所述多个可变支撑层52间隔设置在第三空腔内的。在其他实施例中，所述第四绝缘层54也可以设置在所述第四下电极层55上且位于所述第三空腔内。换而言之，所述固定支撑层51的下表面与第三下电极层55固定连接。进一步地，所述第四绝缘层54与所述第四下电极层55也可以均位于所述第三空腔内，从而使得所得所述固定支撑层51的下表面与衬底53固定连接。It can be understood that the variable supportinglayer 52 is not limited to one, and multiple variable supportinglayers 52 may also be provided. For example, the multiple variable supportinglayers 52 are arranged in the third cavity at intervals. In other embodiments, the fourth insulatinglayer 54 may also be disposed on the fourthlower electrode layer 55 and located in the third cavity. In other words, the lower surface of the fixedsupport layer 51 is fixedly connected to the thirdlower electrode layer 55. Further, the fourth insulatinglayer 54 and the fourthlower electrode layer 55 may also be located in the third cavity, so that the lower surface of the resulting fixedsupport layer 51 is fixedly connected to thesubstrate 53.

本申请实施例的可变支撑层应用于电容式MEMS超声波换能器，为超声换能器提供了两个不同的工作频率，例如将所述超声换能器100应用于光学指纹识别装置时，可根据光学指纹识别装置在指纹识别与防伪时分别对工作频率的不同需求，提供不同的工作频率。当进行指纹识别时，为所述超声换能器100需要提供高频工作频率，当进行指纹防伪时，由于需要使超声波能穿过手指，获得其他活体信号，此时，需要所述超声换能器100提供低频信号。即本申请实施例提供的所述超声换能器100能满足光学指纹对于高频和低频的需求。The variable support layer of the embodiment of the present application is applied to a capacitive MEMS ultrasonic transducer, and provides two different working frequencies for the ultrasonic transducer. For example, when theultrasonic transducer 100 is applied to an optical fingerprint recognition device, Different operating frequencies can be provided according to the different requirements of the optical fingerprint identification device for operating frequencies during fingerprint identification and anti-counterfeiting. When performing fingerprint recognition, theultrasonic transducer 100 needs to provide a high-frequency working frequency. When performing fingerprint anti-counterfeiting, because the ultrasonic wave can pass through the finger to obtain other living body signals, theultrasonic transducer 100 is required at this time. Thedevice 100 provides a low frequency signal. That is, theultrasonic transducer 100 provided in the embodiment of the present application can meet the requirements of optical fingerprints for high frequency and low frequency.

本申请提供的所述超声换能器100，方案结构简单，在不影响空间分辨率的基础上，实现超声换能器既能在低频下发射或接收信号，又能在高频下发射和接收信号，提高了发射信号的能量以及接收信号的灵敏度。Theultrasonic transducer 100 provided in the present application has a simple structure, and realizes that the ultrasonic transducer can transmit or receive signals at low frequencies and transmit and receive signals at high frequencies without affecting the spatial resolution. The signal improves the energy of the transmitted signal and the sensitivity of the received signal.

图6为本申请第六实施例提供的一种超声换能器的纵截面示意图。本申请实施例的可变支撑层应用于电容式MEMS超声波换能器，与上述第五实施例不同 之处在于，提供了另一种不同的可变支撑层结构。相同之处本申请实施例不再详细描述。可变支撑层62包括第六上电极层621，第六下电极622、第六绝缘层(附图未示出)以及第六支撑层623。第六绝缘层位于第六上电极层621的下表面或者第六绝缘层位于第六下电极层622的上表面。第六支撑层623由可支撑材料制成，例如可以是非金属材料，也可以是金属材料。第六支撑层623设置在所述衬底63上，第六下电极层622设置在第六支撑层623的上方，第六上电极层621设置在第四薄膜层504的下方且与第六下电极层622之间形成间隙；当所述第六上电极层621与所述第六下电极层622通电时，所述第六上电极层621与第六下电极层622接触，以提供第一工作频率，所述第六上电极621与所述第六下电极层622分开时，以提供第二工作频率。本申请实施例中可变支撑层52与振膜层接触或分开指的是第六上电极层621和第六下电极层622接触或分开。具体的，第六上电极层621和第六下电极层622分开时，为超声换能器100提供低频，；第六上电极层621和第六下电极层622接触时，为超声换能器100提供高频。在另一种实施例的情况下，第四薄膜层504的材料也可以是电极材料，此时可以省去第六上电极层621，第四薄膜层504可以充当第六上电极层621使用。本申请方案结构简单，在不影响空间分辨率的基础上，实现超声换能器100在低频和高频下发射和接收信号，提高了发射信号的能量以及接收信号的灵敏度。FIG. 6 is a schematic longitudinal cross-sectional view of an ultrasonic transducer provided by a sixth embodiment of this application. The variable support layer of the embodiment of the present application is applied to a capacitive MEMS ultrasonic transducer. The difference from the fifth embodiment described above is that another different variable support layer structure is provided. The similarities are not described in detail in the embodiments of the present application. Thevariable support layer 62 includes a sixthupper electrode layer 621, a sixthlower electrode 622, a sixth insulating layer (not shown in the drawings), and asixth support layer 623. The sixth insulating layer is located on the lower surface of the sixthupper electrode layer 621 or the sixth insulating layer is located on the upper surface of the sixthlower electrode layer 622. Thesixth support layer 623 is made of a supportable material, for example, it may be a non-metallic material or a metallic material. The sixth supportinglayer 623 is disposed on the substrate 63, the sixthlower electrode layer 622 is disposed above the sixth supportinglayer 623, and the sixthupper electrode layer 621 is disposed below the fourththin film layer 504 and is in contact with the sixth lower electrode layer. A gap is formed between the electrode layers 622; when the sixthupper electrode layer 621 and the sixthlower electrode layer 622 are energized, the sixthupper electrode layer 621 is in contact with the sixthlower electrode layer 622 to provide a first Operating frequency, when the sixthupper electrode 621 is separated from the sixthlower electrode layer 622, a second operating frequency is provided. The contact or separation of thevariable support layer 52 and the diaphragm layer in the embodiments of the present application refers to the contact or separation of the sixthupper electrode layer 621 and the sixthlower electrode layer 622. Specifically, when the sixthupper electrode layer 621 and the sixthlower electrode layer 622 are separated, a low frequency is provided for theultrasonic transducer 100; when the sixthupper electrode layer 621 and the sixthlower electrode layer 622 are in contact, it is anultrasonic transducer 100 provides high frequency. In the case of another embodiment, the material of the fourththin film layer 504 may also be an electrode material. In this case, the sixthupper electrode layer 621 may be omitted, and the fourththin film layer 504 may be used as the sixthupper electrode layer 621. The solution of the present application has a simple structure and realizes that theultrasonic transducer 100 transmits and receives signals at low and high frequencies without affecting the spatial resolution, thereby improving the energy of the transmitted signal and the sensitivity of the received signal.

在另一种实施例中，图6中的可变支撑层62和第四上电极层501的设置位置类似于图3可变支撑层12和第一上电极层101的位置放置，可变支撑层52与固定支撑层51间隔设置，且位于所述第三空腔211的中心。所述第四上电极层501在所述第四绝缘层54上的投影位于所述第三空腔211内且位于可 变支撑层62与固定支撑层51间隔之间。In another embodiment, the positions of thevariable support layer 62 and the fourthupper electrode layer 501 in FIG. 6 are similar to the positions of thevariable support layer 12 and the firstupper electrode layer 101 in FIG. Thelayer 52 is spaced apart from the fixedsupport layer 51 and is located in the center of thethird cavity 211. The projection of the fourthupper electrode layer 501 on the fourth insulatinglayer 54 is located in thethird cavity 211 and between thevariable support layer 62 and the fixedsupport layer 51.

在另一种实施例中，图5中的可变支撑层62的数目类似于图4可以设置多个，即多个可变支撑层62间隔设置在第三空腔211内的。In another embodiment, the number of variable support layers 62 in FIG. 5 is similar to that in FIG.

在另一种实施例中，如图7所示，固定支撑层51的下表面与第三下电极层55固定连接。In another embodiment, as shown in FIG. 7, the lower surface of the fixedsupport layer 51 is fixedly connected to the thirdlower electrode layer 55.

在另一种实施例中，如图8所示，固定支撑层51的下表面与衬底53固定连接。In another embodiment, as shown in FIG. 8, the lower surface of the fixedsupport layer 51 is fixedly connected to thesubstrate 53.

在本申请的一个实施例中，可变支撑层的工作原理包含压电效应和静电效应，本申请不仅限于这两种，也可以通过其它方式改变可变支撑层高度或者使可变支撑层与振膜层吸合，例如电磁效应或磁致伸缩。In an embodiment of the present application, the working principle of the variable support layer includes piezoelectric effect and electrostatic effect. The diaphragm layer attracts, such as electromagnetic effect or magnetostriction.

以磁致伸缩原理为例，请参考图9，本申请实施例以电容式MEMS超声波换能器为例进行说明，当然也可以应用于压电式MEMS超声波换能器。由于空腔内部空间有限，可以将线圈92放置在第四薄膜层504上方,其中可变支撑层91为磁致伸缩材料，例如，可以是Ni、NiFeCo合金、稀土超磁致伸缩材料等。可变支撑层91设置在第四绝缘层54上并且与第四绝缘层54固定连接。可变支撑层91与第四薄膜层504之间形成间隙，以使所述可变支撑层91与所述第四薄膜层504接触或分开。当线圈92通电时，会产生磁场，由于磁致伸缩原理，可变支撑层91的高度发生变化，引起可变支撑层91与第四薄膜层504接触或分开。具体的，所述可变支撑层91与第四薄膜层504接触时，以提供第一工作频率，所述可变支撑层91与第四薄膜层504分开时，以提供第二工作频率。Taking the principle of magnetostriction as an example, please refer to FIG. 9. The embodiment of the present application takes a capacitive MEMS ultrasonic transducer as an example for description. Of course, it can also be applied to a piezoelectric MEMS ultrasonic transducer. Due to the limited internal space of the cavity, thecoil 92 can be placed above thefourth film layer 504, wherein thevariable support layer 91 is made of magnetostrictive material, for example, it can be Ni, NiFeCo alloy, rare earth giant magnetostrictive material, etc. Thevariable support layer 91 is disposed on the fourth insulatinglayer 54 and is fixedly connected to the fourth insulatinglayer 54. A gap is formed between the variable supportinglayer 91 and the fourththin film layer 504 to make the variable supportinglayer 91 contact or separate from the fourththin film layer 504. When thecoil 92 is energized, a magnetic field is generated. Due to the principle of magnetostriction, the height of the variable supportinglayer 91 changes, causing the variable supportinglayer 91 to contact or separate from the fourththin film layer 504. Specifically, when the variable supportinglayer 91 is in contact with the fourththin film layer 504, the first operating frequency is provided, and when the variable supportinglayer 91 is separated from the fourththin film layer 504, the second operating frequency is provided.

以电磁原理为例，请参考图10，本申请实施例以电容式MEMS超声波换能 器为例进行说明，当然也可以应用于压电式MEMS超声波换能器。刚体磁性薄膜93为刚体磁性材料，例如，可以是AlNiCo合金，TiCo合金，BaFeO等。将线圈91放置在第四薄膜层504上方。可变支撑层92为可支撑材料。当线圈91通电时，会产生磁场，由于电磁原理，刚体磁性薄膜93使第四薄膜层504发生形变，使得第四薄膜层504和可变支撑层92接触或分开。具体的，所述第四薄膜层504和可变支撑层92接触时，以提供第一工作频率，所述第四薄膜层504和可变支撑层92分开时，以提供第二工作频率。刚体磁性薄膜93可以位于第四薄膜层504的上方或下方，也可以在第四薄膜层504里面，如果空腔空间足够，线圈91也可能放在空腔内。Taking the electromagnetic principle as an example, please refer to Fig. 10. The embodiment of the present application takes a capacitive MEMS ultrasonic transducer as an example for description. Of course, it can also be applied to a piezoelectric MEMS ultrasonic transducer. The rigidmagnetic film 93 is a rigid magnetic material, for example, it may be AlNiCo alloy, TiCo alloy, BaFeO, etc. Thecoil 91 is placed above thefourth film layer 504. Thevariable support layer 92 is a supportable material. When thecoil 91 is energized, a magnetic field is generated. Due to the electromagnetic principle, the rigidmagnetic film 93 deforms thefourth film layer 504, so that thefourth film layer 504 and thevariable support layer 92 contact or separate. Specifically, when thefourth film layer 504 and thevariable support layer 92 are in contact, the first operating frequency is provided, and when thefourth film layer 504 and thevariable support layer 92 are separated, the second operating frequency is provided. The rigidmagnetic film 93 may be located above or below thefourth film layer 504, or inside thefourth film layer 504. If the cavity space is sufficient, thecoil 91 may also be placed in the cavity.

为清楚的描述，还可参见图11，图11为本申请实施例提供的一种超声换能器的俯视图。第三上电极501位于超声换能器的中间部分，线圈91位于第四薄膜层504上方，并环绕第三上电极501。应当理解，线圈91还可置于空腔内。For a clear description, also refer to FIG. 11, which is a top view of an ultrasonic transducer provided by an embodiment of the application. The thirdupper electrode 501 is located in the middle part of the ultrasonic transducer, and thecoil 91 is located above thefourth film layer 504 and surrounds the thirdupper electrode 501. It should be understood that thecoil 91 may also be placed in the cavity.

当高低工作频率相差较大时，如果使用在边缘设置可变支撑层的方式，即可变支撑层紧贴位于薄膜层边缘的固定支撑层时，可理解可变支撑层也位于边缘，会导致振膜的占空比降低，从而降低超声换能器的发射/接收灵敏度，同时也会影响超声换能器的指向性。为了解决这个问题，可以使用分形的方式进行可变支撑层的设计，请参考图12和图13。在分形设计中，在高频模式下，可变支撑层126与振膜层12(1)-12(4)接触，振膜层12(1)-12(4)均可以同一频率工作，使得占空比不会降低，这样就大幅减少了发射信号和接收灵敏度的损失。When the high and low operating frequencies have a large difference, if the variable support layer is set on the edge, the variable support layer is close to the fixed support layer at the edge of the film layer. It can be understood that the variable support layer is also located at the edge, which will cause The duty cycle of the diaphragm is reduced, thereby reducing the transmitting/receiving sensitivity of the ultrasonic transducer, and at the same time, it also affects the directivity of the ultrasonic transducer. In order to solve this problem, a fractal method can be used to design the variable support layer, please refer to Figure 12 and Figure 13. In the fractal design, in the high frequency mode, thevariable support layer 126 is in contact with the diaphragm layers 12(1)-12(4), and the diaphragm layers 12(1)-12(4) can all work at the same frequency, so that The duty cycle will not be reduced, which greatly reduces the loss of transmitted signal and receiving sensitivity.

本申请所称的占空比为有效振膜面积和等效周期的比值。对于图12来说，当可变支撑层126与振膜层接触时，将此时的空腔面积平分成了4份，每一份 的空腔面积与1/4振膜层面积的比值等效为占空比。The duty cycle referred to in this application is the ratio of the effective diaphragm area to the equivalent period. For Fig. 12, when thevariable support layer 126 is in contact with the diaphragm layer, the area of the cavity at this time is equally divided into 4 parts, and the ratio of the cavity area of each part to the area of the 1/4 diaphragm layer is equal to The effect is the duty cycle.

本申请包括发射信号和接收信号两个过程。发射信号过程为，在第一上电极层和第一下电极层直接加交流电压，第一压电层和/或薄膜层发生形变，产生超声波信号；接收信号过程为，在接收超声波信号时，超声波信号引起第一压电层和/或薄膜层发生形变，第一压电层和/或薄膜层会使第一上电极层和和第一下电极层之间产生电压变化。This application includes two processes: transmitting a signal and receiving a signal. The signal transmission process is that an AC voltage is directly applied to the first upper electrode layer and the first lower electrode layer, the first piezoelectric layer and/or the thin film layer is deformed, and an ultrasonic signal is generated; the signal receiving process is, when the ultrasonic signal is received, The ultrasonic signal causes the first piezoelectric layer and/or the thin film layer to deform, and the first piezoelectric layer and/or the thin film layer causes a voltage change between the first upper electrode layer and the first lower electrode layer.

基于上述实施例一所描述的超声换能器，本申请实施例提供一种信息采集元件，该信息采集元件包括如实施例一中所描述的超声换能器。Based on the ultrasonic transducer described in the first embodiment, an embodiment of the present application provides an information collection element, and the information collection element includes the ultrasonic transducer as described in the first embodiment.

可选地，在本申请的一个实施例中，信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器。Optionally, in an embodiment of the present application, the information acquisition element is a microphone, an ultrasonic radar, an ultrasonic imaging device, an ultrasonic fingerprint acquisition device, or a proximity sensor.

此处，列举两个具体示例对信息采集元件进行说明，当然，此处只是示例性说明，并不代表本申请局限于此：Here, two specific examples are cited to describe the information collection element. Of course, this is only an example description, which does not mean that the application is limited to this:

在第一个示例中，信息采集元件为超声指纹采集装置，如图14所示，图14为本申请实施例提供的一种指纹采集示意图，超声指纹采集装置可以安装在一个电子设备上，例如，该电子设备可以是带有指纹采集功能的智能终端，指纹检测区域在该电子设备的面板的特定区域，以智能手机的指纹解锁功能为例，在需要对智能手机进行解锁的时候，使用者只需要将手指按压在指纹检测区域，便可以完成指纹识别。其中指纹检测区域可以安置在显示屏特定区域，也可以放置在专门的指纹检测区域(比如Home键)。In the first example, the information collection element is an ultrasonic fingerprint collection device, as shown in FIG. 14, which is a schematic diagram of a fingerprint collection provided by an embodiment of this application. The ultrasound fingerprint collection device can be installed on an electronic device, for example The electronic device may be a smart terminal with a fingerprint collection function, and the fingerprint detection area is in a specific area of the panel of the electronic device. Taking the fingerprint unlocking function of a smart phone as an example, when the smart phone needs to be unlocked, the user You only need to press your finger on the fingerprint detection area to complete fingerprint recognition. The fingerprint detection area can be placed in a specific area of the display screen, or it can be placed in a special fingerprint detection area (such as the Home button).

图15为本申请实施例提供的一种超声指纹采集的纵截面示意图。超声指纹采集装置包括，超声传播媒介1001和超声换能器阵列1002，超声换能器阵列1002是由至少两个超声换能器组成的。超声传播媒介1001能够将超声换能器阵列1002产生的超声信号经由电子设备的面板传递到手指。超声波在面板、空气或玻璃、皮肤界面发生反射，由于空气和皮肤的声阻抗有很大差别，导致反射的超声信号的强度不同，故可以对指纹成像。FIG. 15 is a schematic longitudinal cross-sectional view of an ultrasonic fingerprint collection provided by an embodiment of the application. The ultrasonic fingerprint acquisition device includes anultrasonic propagation medium 1001 and anultrasonic transducer array 1002. Theultrasonic transducer array 1002 is composed of at least two ultrasonic transducers. Theultrasonic propagation medium 1001 can transmit the ultrasonic signal generated by theultrasonic transducer array 1002 to the finger via the panel of the electronic device. Ultrasound is reflected on the interface of the panel, air or glass, and skin. Because the acoustic impedance of air and skin is very different, the intensity of the reflected ultrasonic signal is different, so fingerprints can be imaged.

本申请实施例提供的信息采集元件，通过改变可变支撑层的高度，实现可变支撑层与振膜层接触和分开，超声换能器能实现有多个不同的工作频率，提高了发射信号的能量以及接收信号的灵敏度。The information collection element provided by the embodiment of the application realizes the contact and separation of the variable support layer and the diaphragm layer by changing the height of the variable support layer, and the ultrasonic transducer can realize multiple different working frequencies, which improves the transmission signal. The energy and the sensitivity of the received signal.

基于上述实施例一所描述的超声换能器，本申请实施例提供一种电子设备 160，如图16所示，图16为本申请实施例提供的一种电子设备的结构图，该电子设备160包括如实施例一所描述的超声换能器。Based on the ultrasonic transducer described in the first embodiment above, an embodiment of the present application provides anelectronic device 160, as shown in FIG. 16, which is a structural diagram of an electronic device provided by an embodiment of the present application. 160 includes the ultrasonic transducer as described in the first embodiment.

可选地，在本申请的一个实施例中，电子设备160包括超声换能器阵列，超声换能器阵列是由至少两个如实施例一所描述的超声换能器100组成的阵列。Optionally, in an embodiment of the present application, theelectronic device 160 includes an ultrasonic transducer array, and the ultrasonic transducer array is an array composed of at least twoultrasonic transducers 100 as described in the first embodiment.

可选地，如图16所示，该电子设备160包括处理器161、存储器162和总线163，处理器161、存储器162和超声换能器100通过总线163相互通信。Optionally, as shown in FIG. 16, theelectronic device 160 includes aprocessor 161, amemory 162, and abus 163, and theprocessor 161, thememory 162 and theultrasound transducer 100 communicate with each other through thebus 163.

处理器161可能是中央处理器161CPU，或者是特定集成电路162ASIC(Application Specific Integrated Circuit)，或者是被配置成实施本发明实施例的一个或多个集成电路162。电子设备160包括的一个或多个处理器161，可以是同一类型的处理器161，如一个或多个CPU；也可以是不同类型的处理器1201，如一个或多个CPU以及一个或多个ASIC。Theprocessor 161 may be acentral processing unit 161 CPU, or a specificintegrated circuit 162 ASIC (Application Specific Integrated Circuit), or one or moreintegrated circuits 162 configured to implement the embodiments of the present invention. The one ormore processors 161 included in theelectronic device 160 may be the same type ofprocessor 161, such as one or more CPUs, or different types of processors 1201, such as one or more CPUs and one or more CPUs. ASIC.

存储器162，用于存放程序。存储器162可能包含高速RAM存储器162，也可能还包括非易失性存储器162(non-volatile memory)，例如至少一个磁盘存储器162。Thememory 162 is used to store programs. Thememory 162 may include a high-speed RAM memory 162, and may also include a non-volatile memory 162 (non-volatile memory), for example, at least onedisk memory 162.

本申请实施例提供的电子设备，通过改变可变支撑层的高度，实现可变支撑层与振膜层接触和分开，超声换能器能实现有多个不同的工作频率，提高了发射信号的能量以及接收信号的灵敏度。The electronic device provided by the embodiment of the present application realizes the contact and separation of the variable support layer and the diaphragm layer by changing the height of the variable support layer. The ultrasonic transducer can achieve multiple different working frequencies, which improves the transmission signal performance. Energy and sensitivity of the received signal.

Claims (33)

Translated fromChinese

一种超声换能器，其特征在于，包括：An ultrasonic transducer, characterized in that it comprises:振膜层、固定支撑层、可变支撑层以及衬底；Diaphragm layer, fixed support layer, variable support layer and substrate;所述固定支撑层设置在所述衬底上，且与所述振膜层固定连接，用于支撑所述振膜层；The fixed support layer is arranged on the substrate and is fixedly connected to the diaphragm layer for supporting the diaphragm layer;所述可变支撑层设置于所述衬底与所述振膜层之间，所述可变支撑层与所述振膜层接触时，以提供第一频率，所述可变支撑层与所述振膜层分开The variable support layer is disposed between the substrate and the diaphragm layer, and when the variable support layer is in contact with the diaphragm layer, a first frequency is provided. The diaphragm layer is separated时，以提供一个不同于所述第一频率的第二频率。Time, to provide a second frequency different from the first frequency.根据权利要求1所述的超声换能器，其特征在于，所述振膜层依次包括第一上电极层、第一压电层、第一下电极层以及第一薄膜层；所述固定支撑层上表面与所述第一薄膜层固定连接；所述固定支撑层下表面与所述衬底固定连接。The ultrasonic transducer according to claim 1, wherein the diaphragm layer includes a first upper electrode layer, a first piezoelectric layer, a first lower electrode layer, and a first thin film layer in sequence; the fixed support The upper surface of the layer is fixedly connected with the first film layer; the lower surface of the fixed support layer is fixedly connected with the substrate.根据权利要求2所述的超声换能器，其特征在于，所述可变支撑层包括：The ultrasonic transducer according to claim 2, wherein the variable support layer comprises:第二下电极层，其设置在所述衬底上；A second lower electrode layer, which is disposed on the substrate;第二压电层，其设置在所述第二下电极层上；A second piezoelectric layer, which is disposed on the second lower electrode layer;第二上电极层，其设置在所述第二压电层上，且与所述第一薄膜层之间形成间隙，以使所述第二上电极层与所述第一薄膜层接触或分开；A second upper electrode layer, which is disposed on the second piezoelectric layer and forms a gap with the first thin film layer, so that the second upper electrode layer is in contact with or separates from the first thin film layer ；当所述第二上电极层与所述薄膜层通电时，所述第二上电极层与所述第一薄膜层接触，提供所述第一频率，所述第二上电极与所述第一薄膜层分开，提供所述第二频率。When the second upper electrode layer is energized with the thin film layer, the second upper electrode layer is in contact with the first thin film layer to provide the first frequency, and the second upper electrode is in contact with the first thin film layer. The film layers are separated to provide the second frequency.根据权利要求3所述的超声换能器，其特征在于，所述第一薄膜层、所述衬底与所述固定支撑层围合形成第一空腔,所述可变支撑层位于所述第一空腔内。The ultrasonic transducer according to claim 3, wherein the first film layer, the substrate and the fixed support layer enclose a first cavity, and the variable support layer is located in the Inside the first cavity.根据权利要求4所述的超声换能器，其特征在于，所述可变支撑层设置 在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第二空腔。The ultrasonic transducer according to claim 4, wherein the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a second cavity.根据权利要求5所述的超声换能器，其特征在于，所述第一上电极层在所述衬底上的投影位于所述第二空腔内。The ultrasonic transducer according to claim 5, wherein the projection of the first upper electrode layer on the substrate is located in the second cavity.根据权利要求2所述的超声换能器，其特征在于，所述可变支撑层包括：The ultrasonic transducer according to claim 2, wherein the variable support layer comprises:第三支撑层，其设置在所述衬底上，The third supporting layer, which is arranged on the substrate,第三下电极层，其设置在所述第三支撑层上；A third lower electrode layer, which is disposed on the third support layer;第三上电极层，其设置在所述第一薄膜层下，且与所述第三下电极层之间形成间隙；A third upper electrode layer, which is disposed under the first thin film layer and forms a gap with the third lower electrode layer;当所述第三上电极层与所述第三下电极层通电时，所述第三上电极层与所述第三下电极层接触，以提供所述第一频率，所述第三上电极与所述第三下电极层分开，以提供所述第二频率。When the third upper electrode layer is energized with the third lower electrode layer, the third upper electrode layer is in contact with the third lower electrode layer to provide the first frequency, and the third upper electrode It is separated from the third lower electrode layer to provide the second frequency.根据权利要求7所述的超声换能器，其特征在于，所述第一薄膜层、所述衬底与所述固定支撑层围合形成第一空腔。7. The ultrasonic transducer according to claim 7, wherein the first film layer, the substrate and the fixed support layer enclose to form a first cavity.根据权利要求8所述的超声换能器，其特征在于，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第二空腔。The ultrasonic transducer according to claim 8, wherein the variable support layer is disposed on the inner side of the fixed support layer, and the variable support layer encloses to form a second cavity.根据权利要求9所述的超声换能器，其特征在于，所述第一上电极层在所述衬底上的投影位于所述第二空腔内。The ultrasonic transducer according to claim 9, wherein the projection of the first upper electrode layer on the substrate is located in the second cavity.根据权利要求4-6、8-10中任意一项所述的超声换能器，其特征在于，所述可变支撑层与所述固定支撑层间隔设置，且位于所述第一空腔的中心。The ultrasonic transducer according to any one of claims 4-6, 8-10, wherein the variable support layer and the fixed support layer are spaced apart, and are located in the first cavity. center.根据权利要求4-6、8-10中任意一项所述的超声换能器，其特征在于，所述超声换能器包括多个间隔设置在所述第一空腔内的可变支撑层。The ultrasonic transducer according to any one of claims 4-6, 8-10, wherein the ultrasonic transducer comprises a plurality of variable support layers arranged at intervals in the first cavity .根据权利要求1所述的超声换能器，其特征在于，所述振膜层包括第四 上电极层和设置在所述第四上电极层下方的第四薄膜层；所述超声换能器还包括第四绝缘层和第四下电极层；所述第四下电极层设置在所述衬底上；所述第四绝缘层设置在所述第四下电极层上；所述固定支撑层上表面与所述第四薄膜层固定连接，所述固定支撑层下表面与所述第四绝缘层或第四下电极层或衬底层之间。The ultrasonic transducer according to claim 1, wherein the diaphragm layer comprises a fourth upper electrode layer and a fourth thin film layer disposed under the fourth upper electrode layer; the ultrasonic transducer It also includes a fourth insulating layer and a fourth lower electrode layer; the fourth lower electrode layer is disposed on the substrate; the fourth insulating layer is disposed on the fourth lower electrode layer; the fixed support layer The upper surface is fixedly connected to the fourth thin film layer, and the lower surface of the fixed support layer is between the fourth insulating layer or the fourth lower electrode layer or the substrate layer.根据权利要求13所述的超声换能器，其特征在于，所述可变支撑层包括：The ultrasonic transducer according to claim 13, wherein the variable support layer comprises:第五下电极层，其设置在所述第四绝缘层上；A fifth lower electrode layer, which is disposed on the fourth insulating layer;第五压电层，其设置在所述第五下电极层上；A fifth piezoelectric layer, which is disposed on the fifth lower electrode layer;第五上电极层，共设置在所述第五压电层上，且与所述第四薄膜层之间形成间隙，以使所述第五上电极层与所述第四膜层接触或分开；The fifth upper electrode layer is arranged on the fifth piezoelectric layer and forms a gap with the fourth thin film layer to make the fifth upper electrode layer contact or separate from the fourth thin film layer ；当所述第五上电极层与所述第四薄膜层通电时，所述第五上电极层与所述第四薄膜层接触，提供所述第一频率，所述第五上电极与所述第四薄膜层分开，提供所述第二频率。When the fifth upper electrode layer is energized with the fourth thin film layer, the fifth upper electrode layer is in contact with the fourth thin film layer to provide the first frequency, and the fifth upper electrode is in contact with the fourth thin film layer. The fourth film layer is separated to provide the second frequency.根据权利要求14所述的超声换能器，其特征在于，所述第四薄膜层、第四绝缘层与所述固定支撑层围合形成第三空腔,所述可变支撑层位于所述第三空腔内。The ultrasonic transducer according to claim 14, wherein the fourth film layer, the fourth insulating layer and the fixed support layer enclose a third cavity, and the variable support layer is located in the Inside the third cavity.根据权利要求15所述的超声换能器，其特征在于，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成一个第四空腔。The ultrasonic transducer according to claim 15, wherein the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a fourth cavity.根据权利要求16所述的超声换能器，其特征在于，所述第四上电极层在所述第四绝缘层上的投影位于所述第四空腔内。The ultrasonic transducer according to claim 16, wherein the projection of the fourth upper electrode layer on the fourth insulating layer is located in the fourth cavity.根据权利要求13所述的超声换能器，其特征在于，所述可变支撑层包括：The ultrasonic transducer according to claim 13, wherein the variable support layer comprises:第六支撑层，其设置在所述第四绝缘层上；A sixth supporting layer, which is disposed on the fourth insulating layer;第六下电极层，其设置在所述第六支撑层上；A sixth lower electrode layer, which is disposed on the sixth support layer;第六上电极层，其设置在所述第四薄膜层上，且与所述第六下电极之间形成 间隙；A sixth upper electrode layer, which is disposed on the fourth thin film layer and forms a gap with the sixth lower electrode;当所述第六上电极层与所述第六下电极层通电时，所述第六上电极层与所述第六下电极层接触，以提供所述第一频率，所述第六上电极与所述第六下电极层分开，以提供所述第二频率。When the sixth upper electrode layer is energized with the sixth lower electrode layer, the sixth upper electrode layer is in contact with the sixth lower electrode layer to provide the first frequency, and the sixth upper electrode It is separated from the sixth lower electrode layer to provide the second frequency.根据权利要求18所述的超声换能器，其特征在于，所述第四薄膜层、第四绝缘层与所述固定支撑层围合形成第三空腔。The ultrasonic transducer according to claim 18, wherein the fourth film layer, the fourth insulating layer and the fixed support layer enclose a third cavity.根据权利要求19所述的超声换能器，其特征在于，所述可变支撑层设置在所述固定支撑层的内侧面，且所述可变支撑层围合形成第四空腔。The ultrasonic transducer according to claim 19, wherein the variable supporting layer is arranged on the inner side of the fixed supporting layer, and the variable supporting layer is enclosed to form a fourth cavity.根据权利要求20所述的超声换能器，其特征在于，所述第四上电极层在所述第四绝缘层上的投影位于所述第四空腔内。The ultrasonic transducer according to claim 20, wherein the projection of the fourth upper electrode layer on the fourth insulating layer is located in the fourth cavity.根据权利要求15-17、19-21中任意一项所述的超声换能器，其特征在于，所述可变支撑层与所述固定支撑层间隔设置，且位于所述第三空腔的中心。The ultrasonic transducer according to any one of claims 15-17, 19-21, wherein the variable support layer is spaced apart from the fixed support layer, and is located in the third cavity. center.根据权利要求15-17、19-21所述的超声换能器，其特征在于，所述超声换能器包括多个间隔设置在所述第三空腔内的可变支撑层。The ultrasonic transducer according to claims 15-17, 19-21, wherein the ultrasonic transducer comprises a plurality of variable support layers arranged in the third cavity at intervals.根据权利要求1或2或13所述的超声换能器，其特征在于，所述可变支撑层为磁致伸缩层材料。The ultrasonic transducer according to claim 1 or 2 or 13, wherein the variable support layer is a magnetostrictive layer material.根据权利要求24所述的超声换能器，其特征在于，所述超声换能器还包括线圈，其设置在所述振膜层上；The ultrasonic transducer according to claim 24, wherein the ultrasonic transducer further comprises a coil, which is arranged on the diaphragm layer;所述可变支撑层与所述振膜层之间形成间隙；Forming a gap between the variable support layer and the diaphragm layer;当所述线圈通电时，所述可变支撑层与所述振膜层接触，以提供所述第一频率，或者所述可变支撑层与所述振膜层分开，以提供所述第二频率。When the coil is energized, the variable support layer is in contact with the diaphragm layer to provide the first frequency, or the variable support layer is separated from the diaphragm layer to provide the second frequency frequency.根据权利要求1或2或13所述的超声换能器，其特征在于，所述可变 支撑层为可支撑材料。The ultrasonic transducer according to claim 1 or 2 or 13, wherein the variable support layer is a supportable material.根据权利要求26所述的超声换能器，其特征在于，所述超声换能器还包括线圈以及刚体磁性薄膜，所述线圈设置在所述振膜层上；所述刚体磁性薄膜设置在振膜层内；The ultrasonic transducer according to claim 26, wherein the ultrasonic transducer further comprises a coil and a rigid magnetic film, the coil is arranged on the diaphragm layer; the rigid magnetic film is arranged on the vibration In the film所述可变支撑层与所述振膜层之间形成间隙；Forming a gap between the variable support layer and the diaphragm layer;当所述线圈通电时，所述刚体磁性薄膜使所述振膜层振动，所述可变支撑层与所述振膜层接触，以提供所述第一频率，或者所述可变支撑层与所述振膜层分开，以提供所述第二频率。When the coil is energized, the rigid magnetic film vibrates the diaphragm layer, and the variable support layer contacts the diaphragm layer to provide the first frequency, or the variable support layer and The diaphragm layers are separated to provide the second frequency.根据权利要求4-6、8-10中任意一项所述的超声换能器，其特征在于，所述第一上电极层的面积为所述第一空腔横截面积的0.5倍、0.6倍或者0.7倍。The ultrasonic transducer according to any one of claims 4-6 and 8-10, wherein the area of the first upper electrode layer is 0.5 times or 0.6 times the cross-sectional area of the first cavity. Or 0.7 times.根据权利要求15-17、19-21中任意一项所述的超声换能器，其特征在于，所述第四上电极层的面积为所述第三空腔横截面积的0.5倍、0.6倍或者0.7倍。The ultrasonic transducer according to any one of claims 15-17, 19-21, wherein the area of the fourth upper electrode layer is 0.5 times or 0.6 times the cross-sectional area of the third cavity. Or 0.7 times.一种信息采集元件，其特征在于，包括如权利要求1-29任一项所述的超声换能器。An information collection element, characterized by comprising the ultrasonic transducer according to any one of claims 1-29.根据权利要求30所述的信息采集元件，其特征在于，所述信息采集元件为麦克风、超声雷达、超声成像装置、超声指纹采集装置或接近传感器。The information acquisition element according to claim 30, wherein the information acquisition element is a microphone, an ultrasonic radar, an ultrasonic imaging device, an ultrasonic fingerprint acquisition device, or a proximity sensor.一种电子设备，其特征在于，包括如权利要求1-29任一项所述的超声换能器。An electronic device, characterized by comprising the ultrasonic transducer according to any one of claims 1-29.根据权利要求32所述的电子设备，其特征在于，所述电子设备包括超声换能器阵列，所述超声换能器阵列是由至少两个如权利要求1-29任一项所述的超声换能器组成的阵列。The electronic device according to claim 32, wherein the electronic device comprises an ultrasonic transducer array, and the ultrasonic transducer array is composed of at least two ultrasonic transducers according to any one of claims 1-29. An array of transducers.

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