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WO2009028658A1 - Silicon single crystal wafer for igbt, method for manufacturing silicon single crystal wafer for igbt and method for assuring resistivity of silicon single crystal wafer for igbt - Google Patents

Silicon single crystal wafer for igbt, method for manufacturing silicon single crystal wafer for igbt and method for assuring resistivity of silicon single crystal wafer for igbtDownload PDF

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Publication number
WO2009028658A1
WO2009028658A1PCT/JP2008/065522JP2008065522WWO2009028658A1WO 2009028658 A1WO2009028658 A1WO 2009028658A1JP 2008065522 WJP2008065522 WJP 2008065522WWO 2009028658 A1WO2009028658 A1WO 2009028658A1
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WO
WIPO (PCT)
Prior art keywords
igbt
single crystal
silicon single
wafer
crystal wafer
Prior art date
Application number
PCT/JP2008/065522
Other languages
French (fr)
Japanese (ja)
Inventor
Wataru Sugimura
Masataka Hourai
Shigeru Umeno
Toshiaki Ono
Wataru Ito
Original Assignee
Sumco Corporation
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Publication date
Application filed by Sumco CorporationfiledCriticalSumco Corporation
Priority to JP2009530203ApriorityCriticalpatent/JP5278324B2/en
Publication of WO2009028658A1publicationCriticalpatent/WO2009028658A1/en

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Abstract

Provided is a silicon single crystal wafer composed of a silicon single crystal grown by Czochralski method for an IGBT. The pulling speed margin can be increased and EG processing is not required for the wafer. The wafer has a DZ layer having a sufficient thickness as an IGBT wafer and has IG performance with a small resistivity variance. The wafer has a device region, which is arranged on the entire wafer surface to have an IGBT device formed on the front side, and a gettering region, which is positioned closer to the rear side compared with the device region and is to be removed after the device is formed. The dimension of the device region in the thickness direction is 100-200μm, COP defects and dislocation clusters are eliminated over the entire region in the crystal diameter direction, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less and variance of resistivity within the wafer surface is 5% or less.
PCT/JP2008/0655222007-08-292008-08-29Silicon single crystal wafer for igbt, method for manufacturing silicon single crystal wafer for igbt and method for assuring resistivity of silicon single crystal wafer for igbtWO2009028658A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP2009530203AJP5278324B2 (en)2007-08-292008-08-29 Manufacturing method of silicon single crystal wafer for IGBT

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
JP2007-2230652007-08-29
JP20072230652007-08-29

Publications (1)

Publication NumberPublication Date
WO2009028658A1true WO2009028658A1 (en)2009-03-05

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ID=40387368

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PCT/JP2008/065522WO2009028658A1 (en)2007-08-292008-08-29Silicon single crystal wafer for igbt, method for manufacturing silicon single crystal wafer for igbt and method for assuring resistivity of silicon single crystal wafer for igbt

Country Status (2)

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JP (1)JP5278324B2 (en)
WO (1)WO2009028658A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2013129564A (en)*2011-12-212013-07-04Siltronic AgSilicon single crystal substrate and method of manufacturing the same
DE112012000306T5 (en)2011-01-242013-09-26Shin-Etsu Handotai Co., Ltd. A method of manufacturing a silicon single crystal wafer and a thermally treated wafer
JP2015040142A (en)*2013-08-212015-03-02信越半導体株式会社Manufacturing method of silicon single crystal material, and silicon single crystal material
JP2020074381A (en)*2014-05-282020-05-14インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer, and silicon ingot
EP4151782A1 (en)*2021-09-162023-03-22Siltronic AGSingle crystal silicon semiconductor wafer and method of manufacturing a single crystal silicon semiconductor wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2002057159A (en)*2000-08-072002-02-22Sumitomo Metal Ind Ltd Silicon wafer and manufacturing method thereof
JP2006261632A (en)*2005-02-182006-09-28Sumco CorpMethod of thermally treating silicon wafer
US20070193501A1 (en)*2006-02-212007-08-23Sumco CorporationSilicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2002057159A (en)*2000-08-072002-02-22Sumitomo Metal Ind Ltd Silicon wafer and manufacturing method thereof
JP2006261632A (en)*2005-02-182006-09-28Sumco CorpMethod of thermally treating silicon wafer
US20070193501A1 (en)*2006-02-212007-08-23Sumco CorporationSilicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
DE112012000306T5 (en)2011-01-242013-09-26Shin-Etsu Handotai Co., Ltd. A method of manufacturing a silicon single crystal wafer and a thermally treated wafer
US8916953B2 (en)2011-01-242014-12-23Shin-Etsu Handotai Co., Ltd.Method for manufacturing silicon single crystal wafer and annealed wafer
JP2013129564A (en)*2011-12-212013-07-04Siltronic AgSilicon single crystal substrate and method of manufacturing the same
JP2015040142A (en)*2013-08-212015-03-02信越半導体株式会社Manufacturing method of silicon single crystal material, and silicon single crystal material
JP2020074381A (en)*2014-05-282020-05-14インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Semiconductor element, silicon wafer, and silicon ingot
EP4151782A1 (en)*2021-09-162023-03-22Siltronic AGSingle crystal silicon semiconductor wafer and method of manufacturing a single crystal silicon semiconductor wafer
WO2023041359A1 (en)*2021-09-162023-03-23Siltronic AgProcess for manufacturing a monocrystalline silicon semiconductor wafer, and monocrystalline silicon semiconductor wafer

Also Published As

Publication numberPublication date
JPWO2009028658A1 (en)2010-12-02
JP5278324B2 (en)2013-09-04

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