| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008801046861ACN101790704B (zh) | 2007-08-27 | 2008-08-26 | 光刻用形成抗蚀剂下层膜的组合物和半导体装置的制造方法 |
| JP2009530130AJP5158382B2 (ja) | 2007-08-27 | 2008-08-26 | リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法 |
| US12/673,926US8283103B2 (en) | 2007-08-27 | 2008-08-26 | Composition for forming resist underlayer film for lithography and production method of semiconductor device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007220325 | 2007-08-27 | ||
| JP2007-220325 | 2007-08-27 |
| Publication Number | Publication Date |
|---|---|
| WO2009028511A1true WO2009028511A1 (ja) | 2009-03-05 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/065213WO2009028511A1 (ja) | 2007-08-27 | 2008-08-26 | リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法 |
| Country | Link |
|---|---|
| US (1) | US8283103B2 (ja) |
| JP (1) | JP5158382B2 (ja) |
| KR (1) | KR20100058591A (ja) |
| CN (1) | CN101790704B (ja) |
| TW (1) | TW200925784A (ja) |
| WO (1) | WO2009028511A1 (ja) |
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