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WO2009011224A1 - Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor - Google Patents

Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductorDownload PDF

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Publication number
WO2009011224A1
WO2009011224A1PCT/JP2008/061969JP2008061969WWO2009011224A1WO 2009011224 A1WO2009011224 A1WO 2009011224A1JP 2008061969 WJP2008061969 WJP 2008061969WWO 2009011224 A1WO2009011224 A1WO 2009011224A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide semiconductor
thin film
producing
film transistor
Prior art date
Application number
PCT/JP2008/061969
Other languages
French (fr)
Japanese (ja)
Inventor
Katsura Hirai
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc.filedCriticalKonica Minolta Holdings, Inc.
Priority to JP2009523592ApriorityCriticalpatent/JPWO2009011224A1/en
Publication of WO2009011224A1publicationCriticalpatent/WO2009011224A1/en

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Abstract

Disclosed are a novel metal oxide semiconductor and a method for producing such a metal oxide semiconductor. Specifically disclosed is a method for producing a metal oxide semiconductor with improved efficiency, which enables to stabilize a TFT device by improving fluctuations in the off current and the like and increasing mobility. Also specifically disclosed is a thin film transistor obtained by using a metal oxide semiconductor produced by the method. The method for producing a metal oxide semiconductor is characterized in that a thin film containing a precursor of a metal oxide semiconductor is formed, and then the metal oxide semiconductor is produced by irradiating the thin film with light in the presence of oxygen.
PCT/JP2008/0619692007-07-182008-07-02Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductorWO2009011224A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP2009523592AJPWO2009011224A1 (en)2007-07-182008-07-02 Method for producing metal oxide semiconductor and thin film transistor obtained thereby

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
JP2007-1867702007-07-18
JP20071867702007-07-18

Publications (1)

Publication NumberPublication Date
WO2009011224A1true WO2009011224A1 (en)2009-01-22

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ID=40259562

Family Applications (1)

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PCT/JP2008/061969WO2009011224A1 (en)2007-07-182008-07-02Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor

Country Status (2)

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JP (1)JPWO2009011224A1 (en)
WO (1)WO2009011224A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2010219133A (en)*2009-03-132010-09-30Fuji Electric Systems Co LtdApparatus for manufacturing semiconductor device, and method of manufacturing semiconductor device
JP2010258058A (en)*2009-04-222010-11-11Konica Minolta Holdings IncMethod for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
US8654215B2 (en)2009-02-232014-02-18Gary Edwin SuttonMobile communicator with curved sensor camera
KR101389451B1 (en)*2012-03-192014-04-29연세대학교 산학협력단Composition for oxide thin film, Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor
KR101415748B1 (en)*2011-06-092014-08-06연세대학교 산학협력단A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby
JP2015176965A (en)*2014-03-142015-10-05株式会社日本製鋼所Method for producing oxide-based material
JP5920220B2 (en)*2010-10-262016-05-18日産化学工業株式会社 Capacitive touch panel manufacturing method
US9515193B2 (en)2013-03-192016-12-06Fujifilm CorporationMetal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
KR20170051519A (en)2014-10-272017-05-11후지필름 가부시키가이샤Method for producing metal oxide semiconductor film, metal oxide semiconductor film, thin film transistor and electronic device
US9779938B2 (en)2013-07-102017-10-03Fujifilm CorporationMetal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH05251705A (en)*1992-03-041993-09-28Fuji Xerox Co LtdThin-film transistor
JPH08264794A (en)*1995-03-271996-10-11Res Dev Corp Of Japan Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JP2000247608A (en)*1999-02-262000-09-12Kansai Research InstituteProduction of metal oxide film
JP2001244464A (en)*2000-03-022001-09-07Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2004031933A (en)*2002-05-092004-01-29Konica Minolta Holdings Inc Method of manufacturing organic thin film transistor, and organic thin film transistor and organic thin film transistor sheet manufactured thereby
JP2007042689A (en)*2005-07-292007-02-15Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH05251705A (en)*1992-03-041993-09-28Fuji Xerox Co LtdThin-film transistor
JPH08264794A (en)*1995-03-271996-10-11Res Dev Corp Of Japan Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JP2000247608A (en)*1999-02-262000-09-12Kansai Research InstituteProduction of metal oxide film
JP2001244464A (en)*2000-03-022001-09-07Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2004031933A (en)*2002-05-092004-01-29Konica Minolta Holdings Inc Method of manufacturing organic thin film transistor, and organic thin film transistor and organic thin film transistor sheet manufactured thereby
JP2007042689A (en)*2005-07-292007-02-15Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8654215B2 (en)2009-02-232014-02-18Gary Edwin SuttonMobile communicator with curved sensor camera
JP2010219133A (en)*2009-03-132010-09-30Fuji Electric Systems Co LtdApparatus for manufacturing semiconductor device, and method of manufacturing semiconductor device
JP2010258058A (en)*2009-04-222010-11-11Konica Minolta Holdings IncMethod for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP5920220B2 (en)*2010-10-262016-05-18日産化学工業株式会社 Capacitive touch panel manufacturing method
KR101415748B1 (en)*2011-06-092014-08-06연세대학교 산학협력단A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby
KR101389451B1 (en)*2012-03-192014-04-29연세대학교 산학협력단Composition for oxide thin film, Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor
US9515193B2 (en)2013-03-192016-12-06Fujifilm CorporationMetal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
US9779938B2 (en)2013-07-102017-10-03Fujifilm CorporationMetal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
JP2015176965A (en)*2014-03-142015-10-05株式会社日本製鋼所Method for producing oxide-based material
KR20170051519A (en)2014-10-272017-05-11후지필름 가부시키가이샤Method for producing metal oxide semiconductor film, metal oxide semiconductor film, thin film transistor and electronic device

Also Published As

Publication numberPublication date
JPWO2009011224A1 (en)2010-09-16

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