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WO2006083929A3 - A physical vapor deposition plasma reactor with rf source power applied to the target - Google Patents

A physical vapor deposition plasma reactor with rf source power applied to the targetDownload PDF

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Publication number
WO2006083929A3
WO2006083929A3PCT/US2006/003495US2006003495WWO2006083929A3WO 2006083929 A3WO2006083929 A3WO 2006083929A3US 2006003495 WUS2006003495 WUS 2006003495WWO 2006083929 A3WO2006083929 A3WO 2006083929A3
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
target
chamber
sputter target
source power
Prior art date
Application number
PCT/US2006/003495
Other languages
French (fr)
Other versions
WO2006083929A2 (en
Inventor
Karl M Brown
John Pipitone
Vineet Mehta
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/052,011external-prioritypatent/US7399943B2/en
Priority claimed from US11/222,245external-prioritypatent/US20060169584A1/en
Application filed by Applied Materials IncfiledCriticalApplied Materials Inc
Priority to CN2006800001830ApriorityCriticalpatent/CN101124350B/en
Priority to KR1020067022388Aprioritypatent/KR101239776B1/en
Priority to KR1020137005582Aprioritypatent/KR101376671B1/en
Priority to KR1020127025547Aprioritypatent/KR101284799B1/en
Publication of WO2006083929A2publicationCriticalpatent/WO2006083929A2/en
Publication of WO2006083929A3publicationCriticalpatent/WO2006083929A3/en

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Abstract

A physical vapor deposition reactor includes a vacuum chamber (10) including a sidewall, a ceiling and a wafer support pedestal (14 near a floor of the chamber, a vacuum pump (30) coupled to the chamber, a process gas inlet (26) coupled to the chamber and a process gas source (28) coupled to the process gas inlet. A metal sputter target (18) is located at the ceiling and a high voltage D.C. source (24) coupled to the sputter target (18). An RF plasma source power generator (88) is coupled to the metal sputter target (18) and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal (14) comprises an electrostatic chuck and an RF plasma bias power (38) generator is coupled to the wafer support pedestal (14) having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod (86) having a diameter in excess of about 0.5 inches engages the metal sputter target (18), the RF feed rod (86) extending axially above the target (18) through the ceiling and being coupled to the RF plasma source power generator (88).
PCT/US2006/0034952005-02-032006-01-30A physical vapor deposition plasma reactor with rf source power applied to the targetWO2006083929A2 (en)

Priority Applications (4)

Application NumberPriority DateFiling DateTitle
CN2006800001830ACN101124350B (en)2005-02-032006-01-30 Physical vapor deposition plasma reactor with RF power that can be applied to a target
KR1020067022388AKR101239776B1 (en)2005-02-032006-01-30A physical vapor deposition plasma reactor with rf source power applied to the target
KR1020137005582AKR101376671B1 (en)2005-02-032006-01-30physical vapor deposition reactor
KR1020127025547AKR101284799B1 (en)2005-02-032006-01-30Method for plasma-enhanced physical vapor deposition of metal with rf source power applied to the target

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
US11/052,0112005-02-03
US11/052,011US7399943B2 (en)2004-10-052005-02-03Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US11/222,2452005-09-07
US11/222,245US20060169584A1 (en)2005-02-032005-09-07Physical vapor deposition plasma reactor with RF source power applied to the target

Publications (2)

Publication NumberPublication Date
WO2006083929A2 WO2006083929A2 (en)2006-08-10
WO2006083929A3true WO2006083929A3 (en)2007-03-29

Family

ID=36777859

Family Applications (1)

Application NumberTitlePriority DateFiling Date
PCT/US2006/003495WO2006083929A2 (en)2005-02-032006-01-30A physical vapor deposition plasma reactor with rf source power applied to the target

Country Status (2)

CountryLink
KR (1)KR101239776B1 (en)
WO (1)WO2006083929A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR20120004502A (en)2009-04-032012-01-12어플라이드 머티어리얼스, 인코포레이티드 High pressure RF-DC sputtering and method for improving step applicability and film uniformity of this process
US9194045B2 (en)*2012-04-032015-11-24Novellus Systems, Inc.Continuous plasma and RF bias to regulate damage in a substrate processing system
US9404176B2 (en)2012-06-052016-08-02Applied Materials, Inc.Substrate support with radio frequency (RF) return path
CN105874095A (en)*2013-12-062016-08-17应用材料公司 Deposition apparatus, deposition apparatus and method of operation thereof

Citations (11)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3681227A (en)*1970-06-291972-08-01Corning Glass WorksMicrocircuit mask and method
US4714536A (en)*1985-08-261987-12-22Varian Associates, Inc.Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US4874494A (en)*1986-06-061989-10-17Tadahiro OhmiSemiconductor manufacturing apparatus
US5110438A (en)*1988-01-131992-05-05Tadahiro OhmiReduced pressure surface treatment apparatus
US5252194A (en)*1990-01-261993-10-12Varian Associates, Inc.Rotating sputtering apparatus for selected erosion
US5362672A (en)*1988-06-171994-11-08Tadahiro OhmiMethod of forming a monocrystalline film having a closed loop step portion on the substrate
US5728278A (en)*1990-11-291998-03-17Canon Kabushiki Kaisha/Applied Materials Japan Inc.Plasma processing apparatus
US5976327A (en)*1997-12-121999-11-02Applied Materials, Inc.Step coverage and overhang improvement by pedestal bias voltage modulation
US6221221B1 (en)*1998-11-162001-04-24Applied Materials, Inc.Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6283357B1 (en)*1999-08-032001-09-04Praxair S.T. Technology, Inc.Fabrication of clad hollow cathode magnetron sputter targets
US6458252B1 (en)*1999-11-182002-10-01Tokyo Electron LimitedHigh target utilization magnetic arrangement for a truncated conical sputtering target

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3681227A (en)*1970-06-291972-08-01Corning Glass WorksMicrocircuit mask and method
US4714536A (en)*1985-08-261987-12-22Varian Associates, Inc.Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US4874494A (en)*1986-06-061989-10-17Tadahiro OhmiSemiconductor manufacturing apparatus
US5110438A (en)*1988-01-131992-05-05Tadahiro OhmiReduced pressure surface treatment apparatus
US5362672A (en)*1988-06-171994-11-08Tadahiro OhmiMethod of forming a monocrystalline film having a closed loop step portion on the substrate
US5252194A (en)*1990-01-261993-10-12Varian Associates, Inc.Rotating sputtering apparatus for selected erosion
US5728278A (en)*1990-11-291998-03-17Canon Kabushiki Kaisha/Applied Materials Japan Inc.Plasma processing apparatus
US5976327A (en)*1997-12-121999-11-02Applied Materials, Inc.Step coverage and overhang improvement by pedestal bias voltage modulation
US6221221B1 (en)*1998-11-162001-04-24Applied Materials, Inc.Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6283357B1 (en)*1999-08-032001-09-04Praxair S.T. Technology, Inc.Fabrication of clad hollow cathode magnetron sputter targets
US6458252B1 (en)*1999-11-182002-10-01Tokyo Electron LimitedHigh target utilization magnetic arrangement for a truncated conical sputtering target

Also Published As

Publication numberPublication date
KR101239776B1 (en)2013-03-06
KR20070097298A (en)2007-10-04
WO2006083929A2 (en)2006-08-10

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