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WO2004035858A3 - Atomic layer deposition of noble metals - Google Patents

Atomic layer deposition of noble metalsDownload PDF

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Publication number
WO2004035858A3
WO2004035858A3PCT/US2003/032644US0332644WWO2004035858A3WO 2004035858 A3WO2004035858 A3WO 2004035858A3US 0332644 WUS0332644 WUS 0332644WWO 2004035858 A3WO2004035858 A3WO 2004035858A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
layer deposition
atomic layer
noble metals
dielectrics
Prior art date
Application number
PCT/US2003/032644
Other languages
French (fr)
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WO2004035858A2 (en
Inventor
John J Senkevich
Toh-Ming Lu
Original Assignee
Rensselaer Polytech Inst
John J Senkevich
Toh-Ming Lu
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Publication date
Application filed by Rensselaer Polytech Inst, John J Senkevich, Toh-Ming LufiledCriticalRensselaer Polytech Inst
Priority to AU2003282836ApriorityCriticalpatent/AU2003282836A1/en
Priority to US10/531,245prioritypatent/US20060093848A1/en
Publication of WO2004035858A2publicationCriticalpatent/WO2004035858A2/en
Publication of WO2004035858A3publicationCriticalpatent/WO2004035858A3/en

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Abstract

The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60°C to <260°C. The layer is formed by sequentially pulsing into a chamber containing said surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.
PCT/US2003/0326442002-10-152003-10-15Atomic layer deposition of noble metalsWO2004035858A2 (en)

Priority Applications (2)

Application NumberPriority DateFiling DateTitle
AU2003282836AAU2003282836A1 (en)2002-10-152003-10-15Atomic layer deposition of noble metals
US10/531,245US20060093848A1 (en)2002-10-152003-10-15Atomic layer deposition of noble metals

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US41851902P2002-10-152002-10-15
US60/418,5192002-10-15

Publications (2)

Publication NumberPublication Date
WO2004035858A2 WO2004035858A2 (en)2004-04-29
WO2004035858A3true WO2004035858A3 (en)2004-11-04

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ID=32107939

Family Applications (1)

Application NumberTitlePriority DateFiling Date
PCT/US2003/032644WO2004035858A2 (en)2002-10-152003-10-15Atomic layer deposition of noble metals

Country Status (3)

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US (1)US20060093848A1 (en)
AU (1)AU2003282836A1 (en)
WO (1)WO2004035858A2 (en)

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US8927403B2 (en)2005-03-152015-01-06Asm International N.V.Selective deposition of noble metal thin films
US9129897B2 (en)2008-12-192015-09-08Asm International N.V.Metal silicide, metal germanide, methods for making the same
US9379011B2 (en)2008-12-192016-06-28Asm International N.V.Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9587307B2 (en)2005-03-152017-03-07Asm International N.V.Enhanced deposition of noble metals

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KR101379015B1 (en)2006-02-152014-03-28한국에이에스엠지니텍 주식회사METHOD OF DEPOSITING Ru FILM USING PEALD AND DENSE Ru FILM
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US7704858B2 (en)*2007-03-292010-04-27Intel CorporationMethods of forming nickel silicide layers with low carbon content
US9044715B2 (en)*2007-08-222015-06-02Colorado School Of MinesUnsupported palladium alloy membranes and methods of making same
US20090087339A1 (en)*2007-09-282009-04-02Asm Japan K.K.METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (en)*2007-10-172015-08-12한국에이에스엠지니텍 주식회사 Ruthenium film formation method
US7655564B2 (en)2007-12-122010-02-02Asm Japan, K.K.Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (en)*2007-12-212009-06-25에이에스엠지니텍코리아 주식회사 Ruthenium film deposition method
US7799674B2 (en)*2008-02-192010-09-21Asm Japan K.K.Ruthenium alloy film for copper interconnects
US8084104B2 (en)*2008-08-292011-12-27Asm Japan K.K.Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en)2008-10-142012-03-13Asm Japan K.K.Method for forming metal film by ALD using beta-diketone metal complex
TW201014926A (en)*2008-10-152010-04-16Nat Univ Tsing HuaMethod for producing metallic oxide film having high dielectric constant
US8163341B2 (en)*2008-11-192012-04-24Micron Technology, Inc.Methods of forming metal-containing structures, and methods of forming germanium-containing structures
US20110020546A1 (en)*2009-05-152011-01-27Asm International N.V.Low Temperature ALD of Noble Metals
US8329569B2 (en)2009-07-312012-12-11Asm America, Inc.Deposition of ruthenium or ruthenium dioxide
DE102009041264A1 (en)2009-09-112011-03-24IPHT Jena Institut für Photonische Technologien e.V.Method for producing optically active nano-structures that are utilized for e.g. surface enhanced Raman scattering spectroscopy, involves selecting characteristics by presetting position, size, shape and composition of nano-structures
US8778058B2 (en)2010-07-162014-07-15Colorado School Of MinesMultilayer sulfur-resistant composite metal membranes and methods of making and repairing the same
DE102010036256B4 (en)*2010-09-032018-09-27Epcos Ag Microacoustic device and manufacturing process
US9150646B2 (en)*2010-09-292015-10-06Econous Systems Inc.Surface-oriented antibody coating for the reduction of post-stent restenosis
US8647723B2 (en)*2010-10-222014-02-11GM Global Technology Operations LLCNucleation of ultrathin, continuous, conformal metal films using atomic layer deposition and application as fuel cell catalysts
US9979028B2 (en)2013-12-132018-05-22GM Global Technology Operations LLCConformal thin film of precious metal on a support
US9607842B1 (en)2015-10-022017-03-28Asm Ip Holding B.V.Methods of forming metal silicides
US10731250B2 (en)2017-06-062020-08-04Lam Research CorporationDepositing ruthenium layers in interconnect metallization
JP7256135B2 (en)*2017-06-232023-04-11メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Atomic layer deposition method for selective film growth
US11124874B2 (en)2018-10-252021-09-21Applied Materials, Inc.Methods for depositing metallic iridium and iridium silicide
US20210138503A1 (en)*2019-11-132021-05-13Hzo, Inc.Functional Termination of Parylene in Vacuum
TW202200828A (en)2020-06-242022-01-01荷蘭商Ａｓｍ Ｉｐ私人控股有限公司Vapor deposition of films comprising molybdenum
CN119497761A (en)2022-07-062025-02-21巴斯夫欧洲公司 Method for preparing transition metal-containing films

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US6203613B1 (en)*1999-10-192001-03-20International Business Machines CorporationAtomic layer deposition with nitrate containing precursors
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Patent Citations (4)

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US20020031618A1 (en)*1996-08-162002-03-14Arthur ShermanSequential chemical vapor deposition
WO2001088972A1 (en)*2000-05-152001-11-22Asm Microchemistry OyProcess for producing integrated circuits
US20020081381A1 (en)*2000-10-102002-06-27Rensselaer Polytechnic InstituteAtomic layer deposition of cobalt from cobalt metallorganic compounds
WO2002045167A2 (en)*2000-11-302002-06-06Asm International N.V.Thin films for magnetic devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8927403B2 (en)2005-03-152015-01-06Asm International N.V.Selective deposition of noble metal thin films
US9469899B2 (en)2005-03-152016-10-18Asm International N.V.Selective deposition of noble metal thin films
US9587307B2 (en)2005-03-152017-03-07Asm International N.V.Enhanced deposition of noble metals
US9129897B2 (en)2008-12-192015-09-08Asm International N.V.Metal silicide, metal germanide, methods for making the same
US9379011B2 (en)2008-12-192016-06-28Asm International N.V.Methods for depositing nickel films and for making nickel silicide and nickel germanide

Also Published As

Publication numberPublication date
AU2003282836A8 (en)2004-05-04
AU2003282836A1 (en)2004-05-04
WO2004035858A2 (en)2004-04-29
US20060093848A1 (en)2006-05-04

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