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WO2004008491A3 - Thermal processing system and configurable vertical chamber - Google Patents

Thermal processing system and configurable vertical chamber
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Publication number
WO2004008491A3
WO2004008491A3PCT/US2003/021575US0321575WWO2004008491A3WO 2004008491 A3WO2004008491 A3WO 2004008491A3US 0321575 WUS0321575 WUS 0321575WWO 2004008491 A3WO2004008491 A3WO 2004008491A3
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
pedestal
vessel
substrates
heating element
Prior art date
Application number
PCT/US2003/021575
Other languages
French (fr)
Other versions
WO2004008491A2 (en
Inventor
Dale R Dubois
Jamie H Nam
Craig Wildman
Taiquing Qiu
Jeffrey M Kowalski
Original Assignee
Aviza Tech Inc
Dale R Dubois
Jamie H Nam
Craig Wildman
Taiquing Qiu
Jeffrey M Kowalski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aviza Tech Inc, Dale R Dubois, Jamie H Nam, Craig Wildman, Taiquing Qiu, Jeffrey M KowalskifiledCriticalAviza Tech Inc
Priority to JP2004521615ApriorityCriticalpatent/JP2005533378A/en
Priority to AU2003259104Aprioritypatent/AU2003259104A1/en
Priority to EP03764437Aprioritypatent/EP1522090A4/en
Priority to US10/521,619prioritypatent/US20070243317A1/en
Publication of WO2004008491A2publicationCriticalpatent/WO2004008491A2/en
Publication of WO2004008491A3publicationCriticalpatent/WO2004008491A3/en

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Abstract

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).
PCT/US2003/0215752002-07-152003-07-10Thermal processing system and configurable vertical chamberWO2004008491A2 (en)

Priority Applications (4)

Application NumberPriority DateFiling DateTitle
JP2004521615AJP2005533378A (en)2002-07-152003-07-10 Heat treatment apparatus and configurable vertical chamber
AU2003259104AAU2003259104A1 (en)2002-07-152003-07-10Thermal processing system and configurable vertical chamber
EP03764437AEP1522090A4 (en)2002-07-152003-07-10Thermal processing system and configurable vertical chamber
US10/521,619US20070243317A1 (en)2002-07-152003-07-10Thermal Processing System and Configurable Vertical Chamber

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
US39653602P2002-07-152002-07-15
US60/396,5362002-07-15
US42852602P2002-11-222002-11-22
US60/428,5262002-11-22

Publications (2)

Publication NumberPublication Date
WO2004008491A2 WO2004008491A2 (en)2004-01-22
WO2004008491A3true WO2004008491A3 (en)2004-06-03

Family

ID=30118590

Family Applications (9)

Application NumberTitlePriority DateFiling Date
PCT/US2003/021644WO2004007800A1 (en)2002-07-152003-07-10Thermal processing apparatus and method for evacuating a process chamber
PCT/US2003/021641WO2004007105A1 (en)2002-07-152003-07-10Apparatus and method for backfilling a semiconductor wafer process chamber
PCT/US2003/021642WO2004008493A2 (en)2002-07-152003-07-10Method and apparatus for supporting semiconductor wafers
PCT/US2003/021646WO2004008008A2 (en)2002-07-152003-07-10Control of a gaseous environment in a wafer loading chamber
PCT/US2003/021648WO2004008054A1 (en)2002-07-152003-07-10Variable heater element for low to high temperature ranges
PCT/US2003/021647WO2004008494A2 (en)2002-07-152003-07-10Servomotor control system and method in a semiconductor manufacturing environment
PCT/US2003/021645WO2004008052A2 (en)2002-07-152003-07-10System and method for cooling a thermal processing apparatus
PCT/US2003/021575WO2004008491A2 (en)2002-07-152003-07-10Thermal processing system and configurable vertical chamber
PCT/US2003/021973WO2004007318A2 (en)2002-07-152003-07-15Loadport apparatus and method for use thereof

Family Applications Before (7)

Application NumberTitlePriority DateFiling Date
PCT/US2003/021644WO2004007800A1 (en)2002-07-152003-07-10Thermal processing apparatus and method for evacuating a process chamber
PCT/US2003/021641WO2004007105A1 (en)2002-07-152003-07-10Apparatus and method for backfilling a semiconductor wafer process chamber
PCT/US2003/021642WO2004008493A2 (en)2002-07-152003-07-10Method and apparatus for supporting semiconductor wafers
PCT/US2003/021646WO2004008008A2 (en)2002-07-152003-07-10Control of a gaseous environment in a wafer loading chamber
PCT/US2003/021648WO2004008054A1 (en)2002-07-152003-07-10Variable heater element for low to high temperature ranges
PCT/US2003/021647WO2004008494A2 (en)2002-07-152003-07-10Servomotor control system and method in a semiconductor manufacturing environment
PCT/US2003/021645WO2004008052A2 (en)2002-07-152003-07-10System and method for cooling a thermal processing apparatus

Family Applications After (1)

Application NumberTitlePriority DateFiling Date
PCT/US2003/021973WO2004007318A2 (en)2002-07-152003-07-15Loadport apparatus and method for use thereof

Country Status (6)

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EP (2)EP1540258A1 (en)
JP (2)JP2005533232A (en)
CN (1)CN1643322A (en)
AU (9)AU2003259104A1 (en)
TW (9)TW200416773A (en)
WO (9)WO2004007800A1 (en)

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US9032906B2 (en)2005-11-042015-05-19Applied Materials, Inc.Apparatus and process for plasma-enhanced atomic layer deposition
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US7629256B2 (en)2007-05-142009-12-08Asm International N.V.In situ silicon and titanium nitride deposition
US7833906B2 (en)2008-12-112010-11-16Asm International N.V.Titanium silicon nitride deposition
US11851755B2 (en)2016-12-152023-12-26Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11848200B2 (en)2017-05-082023-12-19Asm Ip Holding B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040184B2 (en)2017-10-302024-07-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
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US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
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US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
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US12442082B2 (en)2021-05-042025-10-14Asm Ip Holding B.V.Reactor system comprising a tuning circuit
US12444599B2 (en)2021-12-082025-10-14Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film

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AU2003249028A1 (en)2004-02-02
AU2003256487A1 (en)2004-02-02

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