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WO2003038884A3 - A method for bonding a pair of silicon wafers together and a semiconductor wafer - Google Patents

A method for bonding a pair of silicon wafers together and a semiconductor waferDownload PDF

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Publication number
WO2003038884A3
WO2003038884A3PCT/IB2002/004439IB0204439WWO03038884A3WO 2003038884 A3WO2003038884 A3WO 2003038884A3IB 0204439 WIB0204439 WIB 0204439WWO 03038884 A3WO03038884 A3WO 03038884A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafers
bonding
cleaning
pair
semiconductor wafer
Prior art date
Application number
PCT/IB2002/004439
Other languages
French (fr)
Other versions
WO2003038884A2 (en
Inventor
William Andrew Nevin
Paul Damien Mccann
Garry Patrick O'nell
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices IncfiledCriticalAnalog Devices Inc
Priority to AU2002339592ApriorityCriticalpatent/AU2002339592A1/en
Priority to EP02777645Aprioritypatent/EP1440463A2/en
Publication of WO2003038884A2publicationCriticalpatent/WO2003038884A2/en
Publication of WO2003038884A3publicationCriticalpatent/WO2003038884A3/en

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Abstract

A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor Wafer (1) wherein )an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The )method includes Subjecting the pretreated interface surface (5) to an initial anneal step at approximately )700°C for 60 minutes for recrystallising the interface surface, and then Subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which Contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1, 150°C for approximately 60 minutes.
PCT/IB2002/0044392001-10-292002-10-25A method for bonding a pair of silicon wafers together and a semiconductor waferWO2003038884A2 (en)

Priority Applications (2)

Application NumberPriority DateFiling DateTitle
AU2002339592AAU2002339592A1 (en)2001-10-292002-10-25A method for bonding a pair of silicon wafers together and a semiconductor wafer
EP02777645AEP1440463A2 (en)2001-10-292002-10-25Method for cleaning silicon wafers surfaces before bonding

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US35097601P2001-10-292001-10-29
US60/350,9762001-10-29

Publications (2)

Publication NumberPublication Date
WO2003038884A2 WO2003038884A2 (en)2003-05-08
WO2003038884A3true WO2003038884A3 (en)2003-09-18

Family

ID=23379043

Family Applications (1)

Application NumberTitlePriority DateFiling Date
PCT/IB2002/004439WO2003038884A2 (en)2001-10-292002-10-25A method for bonding a pair of silicon wafers together and a semiconductor wafer

Country Status (4)

CountryLink
US (4)US20030148592A1 (en)
EP (1)EP1440463A2 (en)
AU (1)AU2002339592A1 (en)
WO (1)WO2003038884A2 (en)

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* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR20040041763A (en)*2002-11-112004-05-20삼성전자주식회사semiconductor wafer washing system and method there of
US20070023850A1 (en)*2005-07-302007-02-01Chien-Hua ChenBonding surfaces together via plasma treatment on both surfaces with wet treatment on only one surface
US7425465B2 (en)*2006-05-152008-09-16Fujifilm Diamatix, Inc.Method of fabricating a multi-post structures on a substrate
FR2913528B1 (en)*2007-03-062009-07-03Soitec Silicon On Insulator PROCESS FOR PRODUCING A SUBSTRATE HAVING A BONE OXIDE LAYER FOR PRODUCING ELECTRONIC OR SIMILAR COMPONENTS
US20080295868A1 (en)*2007-06-042008-12-04Hitachi Kokusai Electric Inc.Manufacturing method of a semiconductor device and substrate cleaning apparatus
US20100186234A1 (en)*2009-01-282010-07-29Yehuda BinderElectric shaver with imaging capability
US8330245B2 (en)*2010-02-252012-12-11Memc Electronic Materials, Inc.Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from same

Citations (2)

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EP0269294A1 (en)*1986-11-051988-06-01Kabushiki Kaisha ToshibaMethod of manufacturing a bonded structure type semiconductor substrate
US5451547A (en)*1991-08-261995-09-19Nippondenso Co., Ltd.Method of manufacturing semiconductor substrate

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
EP0269294A1 (en)*1986-11-051988-06-01Kabushiki Kaisha ToshibaMethod of manufacturing a bonded structure type semiconductor substrate
US5451547A (en)*1991-08-261995-09-19Nippondenso Co., Ltd.Method of manufacturing semiconductor substrate

Non-Patent Citations (5)

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Title
ASTROVA E V ET AL: "EFFECT OF CHEMICAL SURFACE TREATMENT ON P-LAYER FORMATION IN THE INTERFACE REGION OF DIRECTLY BONDED SI WAFERS", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 8, no. 9, 1 September 1993 (1993-09-01), pages 1700 - 1705, XP000417397, ISSN: 0268-1242*
HIMI H ET AL: "SILICON WAFER DIRECT BONDING WITHOUT HYDROPHILIC NATIVE OXIDES", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 33, no. 1A, PART 1, 1994, pages 6 - 10, XP000595054, ISSN: 0021-4922*
NEVIN W A ET AL.: "Influence of cleaning on the quality of the bonding interface in direct bonded silicon wafers", DIFFUSION AND DEFECT DATA PART B (SOLID STATE PHENOMENA), vol. 76-77, 2001, pages 173 - 176, XP002237677*
VORONKOV V B ET AL: "MONITORING OF THE QUALITY OF AN INTERFACE BY THE METHOD OF LASER SCANNING OF DIRECTLY BONDED SILICON WAFERS", SOVIET PHYSICS SEMICONDUCTORS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 25, no. 2, 1 February 1991 (1991-02-01), pages 125 - 130, XP000261269*
YAMAGUCHI H ET AL: "SUPERJUNCTION BY WAFER DIRECT BONDING", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 34, no. 2B, PART 2, 15 February 1995 (1995-02-15), pages L199 - L202, XP000621246, ISSN: 0021-4922*

Also Published As

Publication numberPublication date
US20060030123A1 (en)2006-02-09
AU2002339592A1 (en)2003-05-12
US20080026230A1 (en)2008-01-31
WO2003038884A2 (en)2003-05-08
EP1440463A2 (en)2004-07-28
US20050048737A1 (en)2005-03-03
US20030148592A1 (en)2003-08-07

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