USRE34893E - Semiconductor pressure sensor and method of manufacturing same - Google Patents

Abstract

A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor pressure sensor which is substantially impervious to electrical interference.

2. Description of the Related Art

A semiconductor pressure sensor for measuring a pressure by detecting a variation of resistance value caused by a deformation of a strain guage is well known, and usually comprises a diaphragm made of a single crystal silicon substrate and having a thin portion. The variations of resistance are measured by detecting the value of a pressure applied to the diaphragm, utilizing the concept that the deformation of the strain guage varies in accordance with a mechanical strain force applied thereto by a piezo-resistance element.

Japanese Unexamined Patent Publication 61-239675 discloses a semiconductor pressure sensor, as shown in FIG. 22, which comprises asemiconductor substrate 800 on which apiezoresistance layer 802 is formed, asemiconductor substrate layer 810 for supporting the semiconductor pressure sensor, and a buriedisolation layer 808 provided between thesemiconductor substrate 800 and thesemiconductor substrate layer 810. This sensor is characterized in that a bimetallic movement caused by contact between the diaphragm having a thin thickness and another isolation layer formed on the surface thereof, is suppressed.

As shown in FIG. 22, aconductive metal layer 804 and anisolation layer 806 are further provided in the semiconductor pressure sensor.

In the semiconductor pressure sensor as shown in FIG. 22, however, several drawbacks have been found, for example, thesemiconductor substrate 800 and thesemiconductor substrate layer 810 are inter conductive when they come into contact with each other during a dicing operation for separating a wafer into respective chips, because the thickness of the buriedisolation layer 808 provided therebetween is very thin, e.g., about 0.5 to 2 μm, or when water or dust is attached to an outer peripheral side surface of the buriedisolation layer 808 or in the vicinity thereof, even after the semiconductor pressure sensor is produced. Further, when an electrical voltage exceeding a surface discharge breakdown voltages is applied, due to noise or the like, between thesemiconductor substrate 800 and thesemiconductor substrate layer 810, an external potential will be introduced into the semiconductor substrate, leading to a malfunction or variations in the output thereof due to a mutual interaction between the substrate and the circuitry of a chip pressure sensor on which a drive source of the semiconductor pressure sensor and various circuits are integrated.

SUMMARY OF THE INVENTION

In view of the drawbacks of the conventional semiconductor pressure sensor, the object of this invention is to provide a semiconductor pressure sensor wherein the supporting means of the semiconductor pressure sensor is completely electrically isolated from the semiconductor substrate.

Therefore, according to the present invention, there is provided a semiconductor pressure sensor which comprises a semiconductor substrate having a first semiconductor region in which a semiconductor device is formed, a second semiconductor region, a buried isolation layer provided between the first and the second semiconductor regions, a cavity provided in the second semiconductor region and opening onto the main surface of the second semiconductor region, and a strain detecting portion consisting of the semiconductor device provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is further characterized in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is located inward of the outermost peripheral side surface of the isolation layer.

Further, in accordance with the present invention, there is provided a method of manufacturing a semiconductor pressure sensor, which comprises the steps of bringing a first semiconductor substrate and a second semiconductor substrate in contact with an isolation layer formed therebetween on the surface of one of these semiconductor substrates, etching the main surface of the first semiconductor substrate to thin the thickness thereof, forming at least a semiconductor device in the first semiconductor substrate, forming a cavity extending into the second semiconductor substrate from the main surface thereof, forming a strain detecting portion in the first semiconductor substrate opposite to the cavity, and etching at least one of the outer peripheral side surfaces of the first and second semiconductor substrate to provide a predetermined distance between that outer peripheral side surface and a peripheral side surface of the isolation layer.

According to the present invention, to realize the object thereof as explained above, the characteristic feature of the semiconductor pressure sensor is such that at least one of the outer peripheral side surfaces of the first semiconductor region and the second semiconductor region is located inward of the outer peripheral side surfaces of the isolation layer provided therebetween.

Namely, at least one of the outer peripheral side surfaces of the first semiconductor region or the second semiconductor region is formed at a predetermined distance T inward from the outer peripheral side surface of the isolation layer, e.g., the outer peripheral side surface of the second semiconductor region is formed on the inner portion of the isolation layer at a distance T from the outer peripheral side surface of the isolation layer.

Accordingly, the distance between an end portion of one of the outer peripheral side surfaces of, for example, the first semiconductor region, and that of the second semiconductor region can be greater than the thickness of the isolation layer, whereby an undesirable conduction between the first semiconductor region and the second semiconductor region is effectively prevented during actual use.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a) to 1(h) are cross sectional views of the process of manufacturing the semiconductor pressure sensor of the first embodiment of the present invention;

FIG. 1(i) is a cross sectional view showing a modification of the first embodiment of the present invention;

FIGS. 2(a) to 2(h) are the cross sectional views of the process of manufacturing the semiconductor pressure sensor of the second embodiment of the present invention;

FIG. 3 is a cross sectional view of a semiconductor pressure sensor of the third embodiment of the present invention;

FIG. 4 is a cross sectional view showing a modification of the second embodiment of the present invention;

FIG. 5 is a cross sectional view showing the construction of the semiconductor pressure sensor of the present invention;

FIGS. 6(a) to 6(g) are the cross sectional views of the process of manufacturing the semiconductor pressure sensor of a fourth embodiment of the present invention;

FIG. 7 is a cross sectional view showing a main portion of a first modification of the fourth embodiment of the present invention;

FIG. 8 is a plane view of the semiconductor pressure sensor shown in FIG. 7, as a wafer;

FIG. 9 is a cross sectional view showing a main portion of a second modification of the fourth embodiment of the present invention;

FIGS. 10(a) to 10(k) are cross sectional view of the process of manufacturing the semiconductor pressure sensor of a fifth embodiment of the present invention;

FIGS. 11(a) to 11(h) are cross sectional views of the process of manufacturing the semiconductor pressure sensor of a sixth embodiment of the present invention;

FIG. 12 is a cross sectional view of the semiconductor pressure sensor seventh embodiment of the present invention;

FIGS. 13(a) to 13(e) are cross sectional views of the process of manufacturing the semiconductor pressure sensor of an eighth embodiment of the present invention

FIGS. 14(a) and 14(b) are cross sectional views of the construction for measuring a breakdown voltage, and a chart indicating the relationship between a distance and the breakdown voltage;

FIGS. 15(a) to 15(i) are the cross sectional views of the process of manufacturing the semiconductor pressure sensor of a ninth embodiment of the present invention;

FIG. 16 is a cross sectional view showing one application of the pressure sensor of the present invention;

FIG. 17 and FIG. 18 are views showing modifications of the pressure sensor of the ninth embodiment of the present invention;

FIG. 19 is a cross sectional view of the semiconductor pressure sensor of the tenth embodiment of the present invention;

FIG. 20 is a cross sectional view showing a modification of the pressure sensor of the tenth embodiment of the present invention;

FIG. 21 is a view showing a method of bond anoding used in the present invention; and,

FIG. 22 is a cross sectional view of a conventional semiconductor pressure sensor.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments of this invention will be described with reference to the attached drawings hereunder.

FIGS. 1(a) to 1(h) are the cross sectional views of the process of manufacturing the semiconductor pressure sensor of the first embodiment of the present invention. The process steps involved will be explained sequentially as follows. As shown in FIG. 1(a), and n⁺ buriedlayer 3 and a p⁺ buriedlayer 5 are provided on the surface of asemiconductor substrate 1, by an ion implanting method.

Then, as shown in FIG. 1(b), a p-typeepitaxial layer 7 having a resistance of 10 to 20 Ωcm is grown to a predetermined thickness of, for example 5 to 30 μm (the thickness thereof is determined in accordance with the pressure to be applied to the semiconductor pressure sensor), and anisolation layer 9 of SiO₂ and having a thickness of about 0.5 μm is formed on thelayer 7 by a thermal oxidation method.

As shown in FIG. 1(c), an isolation layer 33 of SiO₂ and having a thickness of about 0.5 μm is formed on an n-typesilicon semiconductor substrate 11 by the thermal oxidation method, and thereafter, as shown in FIG. 1(d), the wafers shown in FIGS. 1(b), and 1(c), are placed in contact with each other with theisolation layer 9 andisolation layer 13 facing each other, and the wafers are bonded together at a bonding temperature of 800° C. to 100° C.

Next, as shown in FIG. 1 1(e), the n-type semiconductor substrate is ground by a lapping process, to produce a mirror finish on the surface thereof, and the p⁺isolation diffusing layers 15 are formed in the regions of the surface thesubstrate 1 at which the isolation portions will be later formed.

Hereinafter the contacting portion between the substrates consisting of theisolation layer 9 and 13, is given thereference numeral 17.

Then, as shown in FIG. 1(f), p⁺isolation diffusing layers 19 are formed in thesilicon semiconductor substrate 1 by a thermal treatment, and thereafterpiezo resistance layers 21, which serve as strain detecting portions, are formed on a predetermined region of the surface of the n-typesilicon semiconductor substrate 1 by diffusing p-type impurities such as boron (B) or the like, utilizing the silicon oxide film as a mask a semiconductor means formed by abipolar transistor 23 is then formed thereon, andisolation layers 25 and 27 and anAl wiring layer 29 are formed by a conventional planar method.

FIG. 1(g) is a schematic cross sectional view of an essential feature of this embodiment.

First, predetermined pressurized medium introducing portions of the n-typesilicon semiconductor substrate 11, for example a region indicated as F-F and having a distance of 1 mm to 5 mm and a region indicated as A-B and having a distance of 5 μm, are etched by a caustic etching method utilizing a caustic potash KOH, or a mixed etchant of hydrogen fluoride, nitric acid, and acetic acid, using the SiO₂ insulatedlayer 27 as a mask and the SiO₂ insulatedlayer 17 as a stopper.

A semiconductor pressure sensor as shown in FIG. 1(h) is obtained by cutting the wafer as shown in FIG. 1(g) at the dotted line A, with a mechanical cutter. In this embodiment, the distance T of the chip after the cutting operation, as shown in FIG. 1(h), is about 5 82 m,

In this embodiment of the semicondcutor pressure sensor as shown in FIG. 1(h), the outer peripheral side surface S of the p-typeepitaxial layer 7 and the outer peripheral side surface R of the n-typesilicon semiconductor substrate 11 will not come into contact with each other, since the outermost portion of the n-typesilicon semiconductor substrate 11 is spaced from the outer peripheral side surface of the SiO₂ isolation layer 17 at the predetermined distance T of, for example, about 5 μm. Further, in this embodiment, the distance from the outer peripheral side surface of the n-typesilicon semiconductor substrate 1 to the outer peripheral side surface R of the n-typesilicon semiconductor substrate 11 can be made greater than the thickness of theisolation layer 17, and thus the possibility of conduction between thesilicon semiconductor substrates 1 and 11 is minimized even when water, dust, or the like is attached to the outer peripheral side surface of theisolation layer 17.

The semiconductor pressure sensor as shown in FIG. 1(h) is applied to adevice 200 shown in FIG. 5. When thisdevice 200 is directly mounted on asurge tank 300 or the like of an automobile, for detecting an intake air pressure therein, foreign particles such as moisture, dust or the like introduced into thesurge tank 300 will be fed into thedevice 200, as shown by an arrow in FIG. 5, and when arriving at thesemiconductor substrate 11 of the semiconductor pressure sensor, in a form of a dew drop, an unstable body-earth level will be produced.

Nevertheless, when the semiconductor pressure sensor of this embodiment is applied, the air pressure can be still detected with a high accuracy even under the above conditions, because the electric potential of thesubstrate 11 can not affect the electric potential of thesubstrate 1.

As shown in FIG. 5, apressure sensor unit 202 is contained in ahousing 201 and is provided with a package consisting of astem 203 and acap 204 welded together and aglass base 205, and thesemiconductor pressure sensor 206 shown in FIG. 1(h) is provided in the package.

In the package, alead wire 208 is hermetically sealed and connected to awire 207, which is connected to thesemiconductor pressure sensor 206 to transfer the electric signal output from thesemicondcutor pressure sensor 206 to the outside. Thelead wire 208 is connected to the outside through alead 209.

Further, in thisunit 202, an O-ring 210 for sealing, a pressurizedsubstance introducing pipe 211 having an end portion bent inward to prevent foreign particles introduced therein from entering with apressurized substance 212, which is rapidly transferred to thesemiconductor pressure sensor 206, and a feedthrough capacitor are provided.

Although an n-typesilicon semiconductor substrate 11 is used in this embodiment, a p-type silicon semiconductor substrate may be used instead.

In this embodiment, the wafer is cut into chips along the dotted line A as shown in FIG. 1(g), but the wafer may be cut along the dotted line G as shown in FIG. 1(i), and thereafter, the side surfaces of the cup chip may be etched with a caustic etchant such as KOH or the like, after providing a wax and a ceramic plate on the surface of theisolation layer 25, so that the outer peripheral side surfaces of the silicon layers 7 and 11 will be arranged inward of the outer peripheral side surface of theisolated layer 17.

In this operation, the etching of the diaphragm portion may be stopped before the bottom portion of the cavity reaches the SiO₂ isolation layer 17 serving as a stopper, and thereafter, the etching of the side portion thereof may be carried out in the same manner as explained above.

Further, in this embodiment, the piezoresistance layer is formed by diffusing impurities into a single crystal silicon substrate, but a piezo resistance layer made of polycrystalline silicon may be formed on the surface of the SiO₂ layer when a high resistance is required.

Furthermore, the circuitry of this invention may be formed not only as a bipolar device but also as a MOS transistor or similar device.

Also, in this embodiment, the predetermined distance T is set to at least 2 μm, but it can preferably be set within a range of from 3 to 200 μm.

The semiconductor device used in this invention corresponds to thepiezoresistance layer 21 and abioplar transistor 23.

The second embodiment of this invention will be explained hereunder with reference to FIGS. 2(a) to 2(h).

FIGS. 2(a) to 2(h) are cross sectional views of the process of manufacturing the semiconductor pressure sensor of the second embodiment of the present invention. The process steps thereof will be explained sequentially as follows, as shown in FIG. 2(a), an n-type epitaxial layer 30 is epitaxially grown to a thickness of 10 to 15 μm, and having a resistance of 1 to 10 Ωcm, on the surface of the n⁺silicon semiconductor substrate 2, an n⁺ type buriedlayer 3 and a p⁺ type buriedlayer 5 are then formed by an ion implanting method, and thereafter, anisolation layer 9 of SiO₂ is formed thereon to a thickness of about 0.5 μm by a thermal oxidation method.

As shown in FIG. 2(b), anisolation layer 13 of SiO₂ having a thickness of about 0.5 μm is formed on a p-typesilicon semiconductor substrate 31 by thermal oxidation.

Thereafter, as shown in FIG. 2(c), the wafers shown in FIGS. 2(a) and 2(b), are brought with each other, with the isolation layers 9 and 13 thereof facing each other, by a direct wafer contact method at a temperature of 800° C. to 1100° C.

Next, the n⁺type semiconductor substrate 2 is ground by a lapping process to a thickness of about 30 μm, and thereafter, the n⁺type semiconductor substrate 2 is selectively etched by a mixed etchant containing hydrogen fluoride, nitric acid, and acetic acid at a mixing rate of 1:3:10, respectively, and diluted with wafer.

The surface is then given a mirror finish.

In this embodiment, the contacting portion consisting of the isolation layers 9 and 13 is given thereference numeral 17 hereafter.

Next, as shown in FIG. 2(d), p⁺isolation diffusing layers 15 are formed in the regions of the surface in which the isolating portions will be later formed, and then as shown in FIG. 2(e), the p⁺isolation diffusing layers 19 are formed in thesilicon semiconductor substrate 30 by a thermal treatment.

Then thepiezoresistance layer 21, which serves as a strain detecting portion, is formed on a predetermined region of the surface of the n-typesilicon semiconductor substrate 30, by diffusing P type impurities such as boron (B) or the like utilizing the silicon oxide film as a mask, and after abipolar transistor 23 is formed thereon, a grooved portion which is a pressurizedmedium introducing portion 32 extending into thesilicon semiconductor substrate 30 from the surface thereof is formed by a caustic etching method utilizing KOH and the isolation layer of SiO₂ as a mask, as shown in FIG. 2(g).

In this embodiment, the size of the groovedportion 32 is such that the distance T' of the semiconductor pressure sensor as shown in FIG. 2(h) is 5 μm.

Then aninsulated layer 34 is formed on the surface of the groovedportion 32, as shown in FIG. 2(f), and awiring 29 made of A1 is formed thereon to obtain a wafer as shown in FIG. 2(g).

Thereafter, the predetermined regions of the p-typesilicon semiconductor substrate 31 are etched with a caustic etching method utilizing a caustic potash KOH and the SiO₂ insulatedlayer 27 as a mask, or a mixed etchant of hydrogen fluoride, nitric acid, and aceitc acid and utilizing the chromiun vapor film as a maks, and then the semiconductor pressure sensor as shown in FIG. 2(h) is obtained by cutting the wafer along the dotted line A'.

In this embodiment, the n-typesilicon semiconductor substrate 30 is formed apart from the outer peripheral side surface of theisolation layer 17 at a predetermined distance T', and further, since the outer peripheral side surface J of the n-typesilicon semiconductor substrate 30 is covered with theisolation layer 34, conduction between the outer peripheral side surfaces of the n-typesilicon semiconductor substrate 30 and the p-typesilicon semiconductor substrate 31 is substantially eliminated.

In a modification of this embodiment of the present invention, theisolation layer 34, an oxide film having a three-layer construction consisting of a nitride oxide film, an oxide film, and a nitride oxide film stacked in this order, each having a high dielectric constant, respectively, may be used instead of theoxide film 17, whereby the electric field is reduced and the electrical characteristic improved. Further, even when the sensor of the present invention is affected by noise or the like, the electrical interference between thesubstrate 30 and thesubstrate 31 is reduced.

Further, in this embodiment, as shown in FIG. 2(g), the etching of the p-typesilicon semiconductor substrate 31 is stopped before the bottom of the grooved portion 32.Iadd., i.e., a pressurized medium introduced portion as shown in FIG. 1(g), .Iaddend.reaches theisolation layer 17; alternatively the bottom .[.of the groovedportion 32.]. .Iadd.thereof .Iaddend.can be allowed to reach theisolation layer 17.

In this third embodiment, the wafer is cut by a mechanical cutting method such as scribing, wire sawing or the like although if the cutting is carried out after the wafer is completed, the method of etching theinsulated layer 36 and 42 from the back side thereof while providing awax 36 and aceramic plate 40 on the surface of theisolation layer 36, as shown in FIG. 3, may be used.

Further when the step shown in FIG. 4 is utilized, accumulation of the regist or the like in the groovedportion 32 is avoided because of the groovedportion 32 is buried in the polycrystalline silicon.

The fourth embodiment of this invention will be explained hereunder with reference to FIGS. 6(a) to 6(g).

In FIG. 6(a), an n-typesilicon semiconductor substrate 50 having a crystal face (100) and a smooth surface is provided, and an oxide film ofSiO₂ 52 having a thickness of 0.2-1 μm is formed on the surface thereof by wet oxidizing method, at a temperature of 1000° C.

Then, as shown in FIG. 6(b), a p-typesilicon semiconductor substrate 54 having a crystal face (100) and a resistance of 10 to 20 μcm is formed on the surface of the n-typesilicon semiconductor substrate 50, by a wafer direct connection method, for example, in an nitrogen gas or an oxidizing atmosphere at a temperature of 1000° C. for a time of one hour.

Then, as shown in FIG. 6(c), the p typesilicons semiconductor substrate 54 is ground by lapping to a mirror finish until the thickness thereof is 5 to 100 μm, and thereafter, a buriedlayer 56 is formed theron by an ion implanting method, followed by forming an n-type epitaxial layer 58 thereon to a thickness of 5 to 15 μm.

Next, as shown in FIG. 6(d), anisolation layer 60,various transistors 62, a diode and a resistor (both not shown), a p-type piezoresistance layer 64, and anoxide film 66 are formed, respectively, to provide devices utilizing a conventional method of making a bipolar IC or the like, and then agrooved portion 68 is formed in the region to be used as a scribe line, by an anisotrophy etching method using a caustic etchant such as KOH and theoxide film 66 as mask, in such a manner that the tip end portion of the groove reaches theoxide film 52.

Then, in the step shown in FIG. 6(e), after forming an SiO₂ film 70 by a thermal oxidation method of CVD method, anaperture 72 is formed in the region of the SiO₂ films 52 and 70, to be used as a scribe line, by an etching method (i.e., the region correspondings to a projectedportion 86 in thesilicon semiconductor substrate 50 described later).

Then the groovedportion 68 is filled with n⁺polycrystalline silicon 74 by a vacuum CVD method, under a reduced pressure, and the surface thereof is ground smooth.

Subsequently athermal oxide film 76 is formed thereon, and successively, anaperture 78 is formed by a conventional IC process, followed by a wiring layer ofAl 80 and apassivation film 82, and as a result, theAl wiring 80 is electrically connected to thesilicon semiconductor substrate 50 through thepolycrystalline silicon 74 and theaperture 72.

Further, acavity 84 is formed by etching the region of thesilicon semiconductor substrate 50 opposite to the region in which the diaphragm of the pressure sensors is provided, with a caustic etchant.

In thissilicon semiconductor substrate 50, the portion without thecavity 84 is called a projectingportion 86.

Then, as shown in FIG. 6(f), aglass plate 88 having the same thermal expansion coefficiecny as that of thesilicon semiconductor substrate 50, for example, "PYLEX" (Trade Mark) glass, is provided for mounting the pressure sensor, and the sensor is connected to the base by an anodic bonding method. Theglass plate 88 is provided with apressure introducing hole 90 and anelectrode layer 92, for stabilizing the connected portion.

The anodic bonding method as mentioned above, is carried out as follows.

The pressure sensor and theglass 88 are placed in contact with each other and the anodic bonding method is carried out by applying a voltage of 600-800 V thereto, utilizing one side of the sensor device on which a pressure sensor is provided as a positive electrode, for about 10 to 20 minutes at a temperature of 300° C. to 400° C. Then, as shown in FIG. 6(f), anupper electrode 94, alower electrode 96, and anelectric source 98 are provided.

After this process is completed, the device is cut at the portion of theAl wiring 80, theaperture 72, the projectingportion 86, and theglass portion 88, by a dicing saw, into a chip. The final product is shown in FIG. 6(g).

As a result of the above process, theAl wiring 80 and theaperture 72 formed on the scribe line are eliminated, and thus the electric isolation of the semiconductor substrate and the supporting means of the pressure sensor is completed, and further, the anodic bonding of the suporting means of the pressure sensor, i.e., the projectingportion 86 and thebase 88, is easily carried out.

According to this embodiment, the following additional effects are obtained.

Namely, in this embodiment, thegroove 68 is filled with thepolycrystalline silicon 74 after the SiO₂ film 70 is formed on the inner surface of thegroove portion 68, and thus substances such as resist or the like can be effectively prevented from entering thegroove 68 during the forming of theAl wiring layer 80 after the SiO₂ film 70 is formed or the like, and the process as mentioned above can be carried out without error.

Next, the main portion of a modification of the fourth embodiment is shown in FIG. 7.

In this modification, the process steps upto the step of forming theaperture 72 are the same as in the fourth embodiment, and thereafter, anelectrode 100 made of Al and used for the anodic bonding is formed inside the grooved portion, instead of filling the grooved portion with the polycrystalline silicon.

As shown in FIG. 8, theelectrode 100 may be formed in several portions in a wafer, as shown by hatching to thereby a stable contact across the wafer.

FIG. 9 shows a second modification of the fourth embodiment in which theelectrode 100 for the anodic bonding is formed only on the surface of theinsulated layer 52 and an upper portion of theaperture 72, and a more accurate electrical contact is obtained by providing theelectrode 100 with a projectingportion 102.

Next, the fifth embodiment of the present invention will be explained with reference to FIGS. 10(a) to 10(h), and a modification thereof will be explained with reference to FIGS. 10(i) to 10(k).

The steps shown in FIGS. 10(a) to 10(c) are the same as the steps shown in FIGS. 6(a) to 6(c), and 401 is a p-type silicon semiconductor subtrate, 402 is a p-type or n-type silicon semiconductor substrate, and 403 is an SiO₂ film having a thickness of 0.1 to 2 μm, respectively.

Further, as shown in FIG. 10(c), the n-well portion is formed by an ion implanting method after thesemiconductor substrate 401 is formed to a thickness of 0.1 to 10 μm.

Then, as shown in FIG. 10(d), an SiO₂ film 405 having a thickness of 0.1 to 1 μm is formed on a predetermined region of thesemiconductor substrate 402, and thereafter, a concaved portion 406b having a circular or rectangular shape and agroove 406a, are formed by etching with an etchant of a KOH solution using the SiO₂ film 405 as a mask, to give the side wall of thegroove 406a and the concaved portion 406b, a tapered configuration.

At this time, the etching with the etchant of KOH solution is stopped when the bottoms of thegroove 406a and the concaved portion 406b reach the surface of the SiO₂ film 403.

As shown in FIG. 10(e), after the thermal oxidation operation is carried out, an SiO₂ film 407 having a thickness of 0.1 to 1 μm is formed on the peripheral side surface of thesemiconductor substrate 402, followed by the depositing of apolycrystalline silicon 408 over the whole surface of the substrate.

As shown in FIG. 10(f), a part of thepolycrystalline silicon 408 is the removed by grinding, to make the surface thereof smooth, and successively, acircuitry 409 is formed on the SiO₂ film 403 by a conventional CMOS method utilizing a silicon (Si) gate, and in the region in which a pressure sensing means will be provided, asilicon nitride film 401 having the thickness of 0.1 to 1 μm is formed on the surface of thepolycrystalline silicon layer 408, and further, a polycrystalline silicon layer having a thickness of 100 to 4000 Å and a predetermined concentration of impurities is formed on a predetermined region of thesilicon nitride film 410, to form apiezoresistance layer 411.

Note that, when a recrystallizing operation is applied to thepiezoresistance layer 411 utilizing a laser beam or the like, the sensitivity thereof will be improved.

In this embodiment, the polycrystalline silicon as an Si gate of CMOS and thepiezoresistance layer 411 are formed separately, but they may be formed of the same polycrystalline silicon.

Thereafter, an layer insulating film such as a BPSG film (not show) and a wiring layer such as Al wiring or the like (not shown) are formed in the CMOS circuit portion, and a plasmanitride passivation film 412 is then formed thereover.

Next, as shown in FIG. 10(g), a plasmanitride passivation film 413 is formed on a predetermined region of the back surface of thesilicon substrate 402 and is etched by a KOH solution, and at this time, the etching is stopped when the tip end portion of the aperture reaches the surface of the SiO₂ film 403.

Utilizing the anisotropic etching with a KOH solution or the like, when a specific pattern is to be etched, anaperture 414 having an axis perpendicular to the surface of the substrate can be obtained by forming an aperture in the substrate first by a laser and then by etching.

Then, as shown in FIG. 10(h), the SiO₂ film 403 in theaperture 414 is removed with hydrogen fluoride, and thereafter, thepolycrystalline silicon 408 is removed by etching with an etchant of a KOH solution.

In this case, although thepolycrystalline silicon 408 is completely removed because the etching is carried out isotropically, this etching does not affect other portions of the substrate because the portion in which the etching as mentioned above is carried out is surrounded by the SiO₂ film 403, the SiO₂ film 407 on the tapered portion, and thesilicon nitride film 410.

As explained above, after thepolycrystalline silicon 408 is removed, adiaphragm 415 of the pressure sensor is formed.

In this example, a predetermined distance U is formed between the outer peripheral side surface portion of the SiO₂ film 403 and the outer peripheral side surface portion of the island portion of thesilicon semiconductor substrate 402 on which theCMOS circuitry 409 is provided, and further, theCMOS circuitry 409 and thepiezoresistance layer 411 are completey covered by aninsulated film 412, and thus the electrical isolation characterisitc with respect to an external portion can be maintained even when air or gas containing moisture or the like is introduced from thepressure introducing aperture 414.

As shown in this Example, the pressure sensor can be made very small and several pressure sensors can be mounted on one chip, whereby a pressure sensor having many functions can be provided without increasing production costs.

Further, in this embodiment, it is apparent more than an island of the semiconductor substrate (here, the substrate referred to is the silicon semiconductor substrate 402) on which a semiconductor device is formed, can exist, and a semiconductor device such as a power MOS or the like may be formed in thesilicon semiconductor substrate 402.

FIG. 10(i) shows a modification of the fifth embodiment, in which a portion 403a of theSiO₂ 403 corresponding to the portion on which a diaphragm is formed is removed before thediaphragm 415 is formed, by forming theaperture 414 and removing thepolycrysatlline silicon 408, and thus the etching can be carried out in one step with a KOH solution as shown in FIG. 10(i).

As shown in FIG. 10(k), when the size of theregion 413a formed on theplasma nitride film 413 before the etching of thesilicon semiconductor substrate 402 is larger than that of the region 403a formed on the SiO₂ film 403, the etching can be easily carried out because the flow of the etchant is improved.

Next, a sixth embodiment of the present invention will be explained hereunder with reference to FIGS. 11(a) to 11(h).

The steps shown in FIGS. 11(a) to 11(d) are the same as the steps shown in FIGS. 10(a) to 10(d) and 501 is a P type silicon semiconductor substrate, 502 is a silicon semiconductor substrate, 503 is an SiO₂ film, and 504 is an n-well region respecitvely.

As shown in FIG. 11(e), after a firstpolycrystalline silicon layer 508a is formed, a SiO₂ film 508b having a thickness of 0.1 to 1 μm (or a silicon nitride film) is formed thereon, and then a secondpolycrystalline silicon layer 508c is formed on the surface of the SiO₂ film 508b.

Then successively, as in the fifth embodiment, the first and the secondpolycrystalline silicon layer 508a and 508c and the SiO₂ film 508b are simultaneously ground to smooth the surface thereof, and thus make surface of the polycrystalline silicon layer coplanar with the surface of anisolation film 505.

Thereafter aCMOSIC circuit 509 and apiezoresistance layer 511 or the like are formed thereon, and then apressure introducing aperture 514 and a diaphragm 515 are formed as shown in FIGS. 11(g) and 11(h).

In this embodiment, since athick portion 520 consisting of the secondpolycrystalline silicon layer 508c and the SiO₂ film layer 508b is formed in a central portion of the diaphragm 515, the stability of the output characteristic of the pressure sensor (for example, improvement of the linearity of the relationship between the pressure and the output) is improved.

As a modification of the above, the device can be used not only as a pressure sensor but also as a multipurpose sensor utilizing the thick portion thereof as mass portion of an acceleration sensor or vibration sensor.

The seventh embodiment of the present invention will be explained with refernece to FIG. 12.

In this embodiment, apiezoresistance layer 411 is formed on the surface of thesilicon nitride film 410, instead of forming thepolycrystalline silicon layer 408 on the inside surface of the concaved portion 4067b as in the fifth embodiment.

In FIG. 12, the same components as used in Example 5 are given the same reference numbers, and thus an explanation thereof is omitted.

An eight embodiments of the present will be explained with refernece to FIGS. 13(a) to 13(e).

This embodiment is intended to obtain a simple process for setting out "the predetermined distance" referred to in this invention, and the essential portion of this process is explained as follows.

Note that, in this embodiment, components such as a pressure introducing aperture corresponding to the cavity, a piezoresistance layer, semiconductor device, diaphragm or the like used in theembodiments 1 to 7, are used.

First, as shown in FIG. 13(a), asilicon semiconductor substrate 600 and asilicon semiconductor substrate 602 are brought into contact with each other with an SiO₂ film 601 having a thickness of 0.5 to 2 μm therebetween, and then a semiconductor device (not shown) is formed in thesilicon semiconductor substrate 602.

Then aplasma nitride film 603 is formed on the predetermined region of thesilicon semiconductor substrate 602, to be used as a mask, and etching is carried out using the KOH etchant as shown in FIG. 13(b).

At this time, thesilicon semiconductor substrate 602 is easily etched with the KOH etchant and the etching can proceed rapidly, but when the top end of the etched portion reaches the SiO₂ film 601, the etching will be expand in the lateral direction because of etching ratio of the SiO₂ the KOH etchant is extremeley slow, compared to that of the silicon, whereby the taperedportion 601a which is an inclined surface, is formed on the SiO₂ film 601 as shown in FIGS. 13(c) and 13(d).

When the etching further proceeds and the top end portion of the etched portion arrives at thesilicon semiconductor substrate 600, thesilicon semiconductor substrate 600 is etched by using the tapered SiO₂ film 601a as a mask as shown in FIG. 13(e).

In accordance with experiments carried out by present inventors, when the etching with the etchant consisting of 33 wt % of KOH solution is applied to the silicon substrate having a configuration such as that shown in FIG. 13(b), i.e., already partly etched, and this silicon substrate comprises two silicon wafers having a (100) crystal face and used as thesilicon semiconductor substrates 600 and 602, respectively, and having an SiO₂ film 601 having a thickness of 7000 Å therebetween, at a temperature of 82° C. for 105 minutes, the etching ratio of the SiO₂ is 70 Å/min and the ratio of the silicon having the (100) crystal fall is 170 Å/min, and thus the predetermined distance V as shown in FIG. 13(e) can be set to about 5 μm.

Note that the etchant used in this Example is not restricted to that explained above, and other etchants may be used if the etching ratio for SiO₂ is smaller than that for silicon, for example, an isotropic etchant which is a mixture of a plurality of acids such as hydrofluoric acid, nitric acid, and acetic and may be used.

According to this embodiment, the etching of thesilicon semiconductor substrate 600 and 602 and the SiO₂ film 601 can be carried out simultaneoulsy, and the predetermined distance V can be arbitrarily controlled by changing the thickness of the SiO₂ film or the etching ratio of the silicon and SiO₂.

The cutting operation is then carried out along the dotted line W, after the step shown in FIG. 13(e) is completed, and at this time, no cracks appear in the film since the SiO₂ film is not damaged during the cutting operation.

Next, the setting of the predetermined distance as defined in this invention will be explained with reference to FIG. 14.

As shown in FIG. 14, several samples having a different predetermined distance J of the insulated substrate were produced, and the breakdown voltage thereof were measured.

The measurement was made by applying a required voltage to the samples, utilizing a "curve-tracer" (provided by TECHOTRONICS Co., Ltd. Type 577) and the voltage at which 100 μA of electric current suddenly flows was defined as the breakdown voltage. Note, at this time a spark discharge was observed on the SiO₂ film.

FIG. 14 is a chart in which data of the isolation breakdown voltages thus obtained are plotted with respect to the predetermined distance J. As apparent from FIG. 14, when J=0 μm, the isolation breakdown voltage is nearly zero, i.e., is completely short circuited, but when the predetermined distance J is more than 2 μm and the thickness of the SiO₂ film 701 is 0.7 μm, the average isolation breakdown voltage is 280 V, and thus it is determined that thesilicon substrate 703 is isolated from thesilicon substrate 702 by the isolated layer.

Further, the measuring is carried out under the condition in which theside surface 704 of thesilicon layer 703 isexposed to air, as shown in FIG. 14, but when theside surface 704 is covered with an SiO₂ film or the like, then the isolation breakdown voltage is further lowered.

In the above embodiment of the present invention, the base for supporting a semiconductor pressure converting device of a semiconductor pressure sensor having a silicon semiconductor substrate, comprises a silicon which is the same material as the substrate or a "PYREX" (Trade Mark) glass having a similar thermal expansion coefficient as the silicon. When the base is made of silicon, however, there is no difference in the thermal expansion coefficient of the base and the sensor, and since a solder, an eutectic crystal of Au-Si, a glass having a low melting point or the like is used as an adhesive for the hermetic sealing between the base and the diaphragm, the thermal stress caused by this adhesive becomes a cause of a reduction of the detection accuracy of the pressure sensor.

When the "PYREX" (Trade Mark) glass is used as a base, however, there is no longer reduction of the accuracy of the pressure detection when an anodic bonding of the hermetical sealing is carried out and an adhesive is not used. Nevertheless, another problem arises in that the accuracy will be reduced by the influence of a thermal stress of about 1μ strain/100° C. caused by the difference of the coefficient of linear expansion of the silicon and the glass (about 1×10^-7 /° C.)

On the other hand, a sodium boron compound, one of the components of the "PYREX" glass, generally has a hygroscopic characteristic, and therefore, when is used with the pressure sensor in a moist atmosphere, it absorbs the moisture to deform the base, and consequently, another problem arises in that the output characteristic of the sensor becomes unstable.

Therefore, in this invention, to overcome the problems explained above, a specific connecting construction between the pressure sensor and a base is described in detail hereunder.

Namely, a semiconductor pressure sensor is attached to a base with an isolation layer interposed therebetween this layer having an impurity containing region including mobile ions therein, and the impurity containing region is formed in the isolation layer such that there is no direct contact thereof with the atmosphere surrounding the pressure sensor.

According to this embodiment, thermal stress is reduced and moisture absorption by the connected portion thereof is prevented even when used in a moist atmosphere.

In this embodiment, any kind of pressure sensor can be used as the pressure sensing means but preferably the pressure sensor described in the above embodiments is used in this device.

Further, in this embodiment the isolation layer having an impurity containing region including mobile ions therein may be formed on one surface of the base on which the semiconductor pressure sensor is mounted, or on a bottom surface of the semiconductor pressure sensor.

The method of producing the semiconductor pressure sensor with a base, as described above, will be explained with reference to FIGS. 15 to 21.

FIGS. 15(a) to 15(i) are cross sectional views sequentially showing the steps of making the semiconductor pressure sensor of this embodiment.

First, in the step shown in FIG. 15(a), an n-type singlecrystal silicon substrate 151 having a (100) crystal face and a resistance of 2 to 10 Ω-cm is thermally-oxidized in a dry oxygen atmosphere to form thermally-oxidized films (SiO₂) 153 and 155 having a thickness of about 100 Å.

Next, in the step shown in FIG. 15(b), at least onepiezoresistance layer 157 is formed by implanting ions such as boron or the like by an ion implanting method.

Then, in the step shown in FIG. 15(c), the thermal oxidation operation is further carried out on the surface of the thermally-oxidized film to bring the thermally-oxidized film (SiO₂) 153 and 155 to a thickness of 5000 Å to 1 μm, followed by forming a contact aperture on the thermally oxidized film to provide anAl wiring layer 159 thereat.

Thereafter, in the step shown in FIG. 15(d), after removing predetermined portions of the thermally oxidizedfilm 155 by etching with a hydrofluoric acid (HF) solution, adiaphragm portion 161 is formed by etching the singlecrystal silicon substrate 151 by an anistropical etching method utilizing a KOH solution, using the remaining thermally-oxidizedfilm 15 on thesilicon substrate 151 as a mask.

Subsequently, as shown in FIG. 15(e), the pressure transducing device is completed by removing the thermally-oxidizedfilm 151 by etching with a hydrofluoric acid (HF) solution or the like.

Then, in the step shown in FIG. 15(f), a surface of the n-type singlecrystal silicon substrate 163 having a (100) crystal face, a resistance of 2 to 10 Ω-cm, and a thickness of 2 mm to 5 mm, to be used as a base for a sensor, is polished to a mirror finish, and thereafter, a thermally-oxidized film (SiO₂) 165 having a thickness of 0.5 to 2 μm is formed as an isolation film, by a thermal oxidation method.

Then, in the step shown in FIG. 15(g), resistpatterns 167 are formed in predetermined areas on the surface of theoxide film 165, utilizing a usual photolithographic method, and successively, theregions including impurities 169 are formed in the thermally oxidizedfilm 165 by implanting Na⁺ ion therein. (any kind of ions may be used in this process but as the ion to be implanted therein, Na⁺, K⁺, Li³⁰ or the like are preferably used.)

Next, in the step shown in FIG. 15(h), after the resists are removed, a pressuremedium introducing aperture 171 penetrating the substrate and the oxide film is formed by ultrasonic processing or the like.

Then, as shown in FIG. 15(i), the pressure transducing device as shown in FIG. 15(e), and the base as shown in FIG. 15(h), are brought into contact with each other by a usual anodic bonding method.

This anodic bonding method is carried out in such a way that, after both components are brought into contact with each other, an electric voltage is applied thereto so that the pressure transducing device is used as an anode as shown in FIG. 21, and both components are subjected to a thermal treatment by theheater 216 at a temperature of 300° C. to 500° C.

As shown in the FIG. 21, anelectric source 210, ananode 212, acathode 214, and an electric source for theheater 218 are provided, and further, ametallized layer 173 formed by a metal plating method, a vacuum deposition method or the like is provided on one surface of thesilicon substrate 163 opposite to the surface thereof on which the thermally-oxidizedfilm 165 is formed, to obtain an electrical conduction when the anoidic bonding is carried out.

FIG. 16 is a cross sectional view of one form of application of the pressure sensor producing in accordance with this ninth embodiment.

In FIG. 16, four piezoresistance devices 157 (not shown) are provided at predetermined positions on thediaphragm 161 and are electrically connected to each other to form a full bridge connection, and further are electrically connected to the end portion of the hermetically sealed terminal 175 through thebonding wire 173 made of aluminum.

Thebase 163 is adhered at a predetermined position of astem 181 of "Koval" (TRADE MARK) provided with a pipe for introducing pressure medium therein 177 and a hermetically sealedportion 179, by a metal plating method.

Acap 183 made of iron is also hermetically connected to the outerperipheral portion 185 of thestem 181, by a projection welding method, to form a pressure reference cell in a region surrounded by thecap 183 and thestem 181.

In this embodiment, when a pressure is applied to this sensor along the direction shown by an arrow, thediaphragm 161 is deformed to cause a variation in the resistance of thepiezoresistance device 157, due to strain thereon, and an electric signal corresponding to that strain is output by the sensor through thehermetically seal terminal 175.

As explained above, in accordance with this embodiment, since both the pressure transducing device and the base thereof are made of the same material, such as silicon, and no adhesive is used therebetween, there is no difference in the coefficient of linear expansion of the pressure transducing device and the base, and thus a thermal strain caused by a such a difference will not be generated.

This effect can be obtained by connecting the silicon of both components utilizing the anodic bonding method, by implainting Na⁺ ion therein without using an adhesive when connecting the silicon components to each other.

Further, in this embodiment, little thermal strain is generated, even when a variation in the temperature of, for example, about 100° C., occurs, because the thickness of the silicon base is thick, i.e., 2 to 5 mm, and the thickness of thethermal oxide film 165 is thin, e.g., 0.5 to 2 μm.

Moreover, in this embodiment, the silicon components are connected by the anodic bonding method, while forming theregion 169 containing impurities therein by introducing ions into the thermally-oxidized film instead of connecting the silicon components with ad adhesive or "PYREX" glass, whereby theregion 169 containing impurities therein is surrounded by the thermally-oxidizedfilm 165, without including the purities therein, as shown in FIG. 15, and theregion 169 containing impurities therein is no exposed to the atmosphere. Therefore, when this device is used in a moist atmosphere, the base is not deformed due to moisture absorption thereof, as when "PYREX" glass is used as the base.

Further, in this embodiment, the thermally-oxidizedfilm 165 is formed on the surface of thesilicon substrate 163, which has been given a mirror finish, by the thermal oxidation method, and therefore, the whole surface thereof is smooth and thus the contact between the surface of the thermally-oxidizedfilm 165 not including impurities and the singlecrystal silicon substrate 151 can be maintained by the direct connection method to an extent such that the adhesive force obtained is weaker than the obtained by the anodic bonding method, but nevertheless is sufficient for actual usage.

This result is obtained by using a temperature of 300° to 500° C., when treating the device, and applying an electric voltage thereto during the anodic bonding.

In this embodiment, the SiO₂ layer 165 including the impurity containedregion 169 is formed on the surface of the base, although as shown in FIG. 17, the same components can be brought into contact with each other by the anodic bonding method after the SiO₂ layer 187 including the impurity containedregion 189 is formed on the surface of the pressure transducing device. At that time, the electric voltage can be applied by utilizing the pressure, transducing device as a cathode, and when this pressure sensor is to be used in a relatively dry atmosphere, theimpurity containing region 191 may be formed on the bottom surface of thesilicon substrate 151 by implanting the mobile ions into the entire surface thereof, as shown in FIG. 18. At that time, theimpurity containing region 191 may be formed on the surface of the base.

Further, in this embodiment, Na⁺ ions are implanted into the SiO₂ film, but another method such as a diffusion method or the like may be used, and moreover, by implanting impurities such as boron or the like therein, the ratio of the impurities in the impurity containing region may be adjusted to be the same as that of the "PYREX" glass having a similar coefficient of thermal expansion as the silicon.

The strain detecting device is not restricted only to the piezo resistance, and another device such as a MOS transistor or the like can be used.

In this embodiment, the thermally oxidizedfilm 165 is formed by thermal oxidation, but it may be formed by a known CVD method, and further, such an isolation film is not restricted only to the SiO₂ film and another isolation film such as a nitride film or nitrided oxide film (formed by nitriding the thermal oxide film in NH₂ gas) may be used instead of the oxide film.

Next, the tenth embodiment of this invention will be explained with reference to FIG. 19.

In this embodiment, difference from the ninth embodiment, thepressure reference cell 193 is provided without forming the pressure introducing aperture in the substrate.

Accordingly, in this embodiment, the SiO₂ film 197 protecting theimpurity containing region 195 from external moisture can be provided only on the outer peripheral portion of the device.

FIG. 20 shows a modification of the pressure sensor device sown in FIG. 19, in which theimpurity containing region 195 is not formed on the surface of thesubstrate 163 and opposite to thepressure reference cell 193. In FIG. 20, the same components as used in FIG. 19 are given the same reference numbers.

In this modification, the pressure sensor in which the generation of thermal strain caused by the connecting portion between the semiconductor pressure transducing device and the base is reduced, and further, the contacting portion does not absorb moisture even used in a moist atmosphere, because the impurity containing region is formed such that is no contact between it and the substance surrounding the semiconductor pressure sensor.

Further, in this embodiment, although the impurity containing region is formed by introducing the mobile ions into the predetermined area on the main surface of the thermally-oxidized film of the silicon substrate, the impurity containing region can formed at any desired area of the main surface of the thermally-oxidized film of the silicon substrate.

Claims (22)

We claim:

1. A semiconductor pressure sensor comprising:

a first semiconductor substrate including therein semiconductor means for electronically processing a pressure;

an isolation layer formed on one surface of said first semiconductor substrate, having a first surface attached to said one surface of said first semiconductor substrate and a second surface opposite said first surface, and having an outer peripheral side surface portion,

a second semiconductor substrate formed on said second surface of said isolation layer, and provided with a portion into which a pressurized medium to be measured is introduced, said second semiconductor substrate being provided with an outer peripheral side surface portion, formed at a position apart from said outer peripheral side surface portion of said isolation layer by a predetermined length sufficient to remove electrical influences which effect said semiconductor means formed in said first semiconductor substrate, said electrical influences being from said outer peripheral side surface portion of said second semiconductor substrate,

a strain, detecting potion formed at a position in said first semiconductor substrate opposite to said pressurized medium introducing portion in said second semiconductor substrate, for detecting a pressure of a pressurized medium to be measured and introduced into said pressurized medium introducing portion and producing an indication to said semiconductor means indicative thereof.

2. A semiconductor pressure sensor according to claim 1, wherein said strain detecting portion is constituted by a piezoresistance layer formed in said first semiconductor substrate, and said semiconductor means is formed between said piezoresistance layer and said outer peripheral side surface portion of said first semiconductor substrate.

3. A semiconductor pressure sensor according to claim 1, wherein a distance between said outer peripheral side surface portion of said isolation layer and said outer peripheral side surface portion of said second semiconductor region is larger than a thickness of said isolation layer.

4. A semiconductor pressure sensor according to claim 3, wherein said distance is obtained by forming the outer peripheral side surface of said isolation layer in a tapered configuration.

5. A semiconductor pressure sensor according to claim 1, wherein said pressurized medium introducing portion is extended directly to a rear part of said strain detecting portion and extends through said second and first semiconductor substrates.

6. A semiconductor pressure sensor according to claim 1, wherein said first semiconductor substrate is made of a single crystal semiconductor.

7. A semiconductor pressure sensor according to claim 1, wherein said peripheral side surface of said second semiconductor substrate is located at least 2 μm inside of an outermost part of said peripheral side surface of said isolation layer.

8. A semiconductor pressure sensor comprising:

a first semiconductor substrate having an outer peripheral side surface portion and provided with a portion into which a pressurized medium to be measured is introduced.

an isolation layer formed on one surface of said first semiconductor substrate, having a first surface attached to said one surface of said first semiconductor substrate and a second surface opposite said first surface, and having an outer peripheral side surface portion,

a second semiconductor substrate formed on said second surface of said isolation layer and provided with a semiconductor structure for electrically processing a pressure detection, said second semiconductor substrate being provided with an outer peripheral side surface portion which is formed at a position apart from said outer peripheral side surface portion of said isolation layer by a predetermined length sufficient to remove electrical influences which affect said semiconductor structure formed in said second semiconductor substrate, which influences are through said outer peripheral side surface portion of said second semiconductor substrate and through said outer peripheral side surface portion of said isolation layer, and

a strain detecting portion formed at a position in said second semiconductor substrate opposite to said pressurized medium introduced portion formed in said first semiconductor substrate for detecting a pressure of a pressurized medium to be measured and introduced into said pressurized medium introducing portion and for producing an indication thereof to said semiconductor structure.

9. A semiconductor pressure sensor according to claim 8, wherein said strain detecting portion is constituted by a piezoresistance layer formed in an vicinity of said semiconductor structure formed in said second semiconductor substrate, and said semiconductor structure is formed between said piezoresistance layer and said outer peripheral side surface portion of said second semiconductor substrate.

10. A semiconductor pressure sensor according to claim 9, wherein said outer peripheral side surface portion of said second semiconductor substrate is exposed to the atmosphere, and further comprising an insulating film, on an upper surface of said second semiconductor substrate opposite to the surface on which said isolation layer is formed.

11. A semiconductor pressure sensor according to claim 9, further comprising an isolating film covering said outer peripheral side surface portion of said second semiconductor substrate.

12. A semiconductor pressure sensor according to claim 8, wherein said semiconductor pressure sensor further comprises:

a diaphragm structure formed on said second semiconductor substrate and at a position opposite to said pressurized medium introducing portion, and

wherein said pressurized medium introducing portion is formed by penetrating said first semiconductor substrate, said isolation layer and said second semiconductor substrate, to extend a tip portion thereof directly to a portion on which said diaphragm structure is located, and an inside surface of said pressurized medium introducing portion formed in said second semiconductor is covered with another isolating film, said strain detecting portion being formed on said portion on which said diaphragm structure is located, said diaphragm structure being provided thereon, and said semiconductor structure being formed between a portion on which said pressurized medium introducing portion is formed in said second semiconductor substrate and said outer peripheral side surface portion of said second semiconductor substrate.

13. A semiconductor pressure sensor, directly mounted on a device related to an engine of an automobile, for detecting a pressure of a medium to be measured, used in said device, wherein said pressure sensor comprises:

a housing provided on said device and including a pressurized medium introducing device therein for introducing a pressurized medium to be measured therein;

a first semiconductor substrate having upper and lower surfaces and an outer peripheral side surface portion extending between said upper and lower surfaces, and provided with a pressurized medium introducing portion, wherein said lower surface of said first semiconductor substrate is connected to said pressurized medium introducing device, whereby said pressurized medium introduced by said pressurized medium introducing device is introduced into said pressurized medium introducing portion;

a second semiconductor substrate having upper and lower surfaces and an outer peripheral side surface portion extended between said upper and lower surfaces and provided with a semiconductor structure for electronically processing a pressure detection;

a strain detecting portion formed in a position in said second semiconductor substrate opposite to said pressurized medium introducing portion formed in said first semiconductor substrate, and detecting a pressure of a pressurized medium to be measured and introduced into said pressurized medium introducing portion; and

an isolating layer provided between said upper surface of said first semiconductor substrate and said lower surface of said second semiconductor substrate to serve as an electrical insulator, and having an outer peripheral side surface portion extending between a first surface coupled to said first semiconductor substrate and a second surface coupled to said second semiconductor substrate, wherein each location of the outer peripheral side surface portions of said isolation layer, said first semiconductor substrate and said second semiconductor substrate, is determined respectively so as to remove electrical influences which affect said semiconductor structure formed in said second semiconductor substrate, caused by influences .[.through.]. .Iadd.from .Iaddend.said outer peripheral side surface portion of said .[.second.]. .Iadd.first .Iaddend.semiconductor substrate and through said outer peripheral side surface portion of said isolation layer.

14. A semiconductor pressure sensor according to claim 13, wherein said device with relation to an engine is a surge tank, and said pressurized medium introducing device is a device for introducing a pressurized medium into said surge tank.

15. A semiconductor pressure sensor according to claim 14, wherein said pressurized medium introducing device is provided with means for preventing foreign particles introduced from said surge tank from entering said pressurized medium introducing portion formed in said first semiconductor substrate.

16. A semiconductor pressure sensor according to claim 14, wherein said outer peripheral side surface portion of said .[.second.]. .Iadd.first .Iaddend.semiconductor substrate is formed at a position apart from said outer peripheral side surface portion of said isolation layer by a predetermined length sufficient to remove electrical influences which affect said semiconductor structure formed in said second semiconductor substrate from said outer peripheral side surface portion of said .[.second.]. .Iadd.first .Iaddend.semiconductor substrate through said outer peripheral side surface portion of said isolation layer.

17. A semiconductor pressure sensor according to one of claims 1 to 8, wherein at least one of the outer peripheral side surfaces of said fist and said second semiconductor substrates is located inside of an outermost peripheral side surface of said isolation layer by said predetermined length.

18. A semiconductor pressure sensor according to claim 17, wherein said predetermined length is determined in such a way that a distance between said outer peripheral side surface portion of said first and second semiconductor substrates is a length exceeding a thickness of said isolation layer.

19. A semiconductor pressure sensor according to claim 17, wherein said outer peripheral side surface portion of said isolation layer is formed in a tapered configuration to form said predetermined length.

20. A semiconductor pressure sensor according to claim 17, wherein said outer peripheral side surface portion of any one of said first and second semiconductor substrates is located at least 2 μm inside said outermost peripheral side surface portion of said isolation layer.

21. A semiconductor pressure sensor according to claim 17, wherein said isolation layer comprises an impurity region including mobile ions therein and said impurity region thereof is arranged such that it is not in direct contact with the atmosphere introduced into the vicinity of the pressure sensor.

22. A semiconductor pressure sensor according to claim 12, further comprising a polycrystalline silicon layer provided on a rear surface of said strain detecting portion and in said pressurized medium introducing device.

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