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USRE30186E - Method for the preparation of relief structures - Google Patents

Method for the preparation of relief structures
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USRE30186E
USRE30186EUS05/972,432US97243278AUSRE30186EUS RE30186 EUSRE30186 EUS RE30186EUS 97243278 AUS97243278 AUS 97243278AUS RE30186 EUSRE30186 EUS RE30186E
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prepolymer
radiation
group
soluble
sensitive
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US05/972,432
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Roland Rubner
Wolfgang Kleeberg
Eberhard Kuhn
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Siemens AG
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Siemens AG
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Abstract

The invention provides a method for the preparation of relief structures of highly heat-resistant polymers, using radiation-sensitive, soluble preliminary polymers in the form of polyaddition or polycondensation products of polyfunctional carbocyclic or heterocyclic compounds containing radiation-sensitive radicals in ester groups bound to said compounds with diamines, diisocyanates, bis-acid chlorides or dicarboxylic acids of cyclic structure. According to the invention, the polyfunctional compounds containing the radiation-sensitive radicals contain, besides carboxyl, carboxylic acid chloride, amino, isocyanate or hydroxyl groups suitable for addition or condensation reactions, partly in ortho or periposition thereto, radiation-reactive radicals in the ester groups bound to the compounds having an oxyalkylene methacrylate or acrylate structure.

Description

BACKGROUND OF THE INVENTION
This invention concerns an improvement and further development of the method according to the U.S. Pat. Application Ser. No. 444,552, now U.S. Pat. No. 3,957,512, herein incorporated by reference, for the preparation of relief structures of highly heat-resistant polymers by applying radiation-sensitive, soluble preliminary polymers to a substrate in the form of a layer or a foil; irradiating the radiation-sensitive layer or foil through negative patterns; dissolving or removing the nonirradiated layer or foil parts and, optionally, subsequently annealing the relief structures obtained, using polyaddition or polycondensation products of polyfunctional carbocyclic or heterocyclic compounds containing radiation-sensitive radicals, with diamines diisocyanates, bis-acid chlorides or dicarboxylic acids as the soluble preliminary polymers wherein:
a. the polyfunctional compounds containing radiation-sensitive radicals R* contain two carboxyl, carboxylic acid chloride, amino, isocyanate or hydroxyl groups suitable for addition or condensation reactions and, partly in ortho or peri position thereto, radiation-reactive groups, bound to carboxyl groups, as esters having the following structure:
______________________________________                                     ##STR1##             R=oxyalkylene                                        ##STR2##             R.sub.1 =alkyl,phenyl, alkoxyphenyl                                       or halogenphenyl                                     ##STR3##             R.sub.2 =H,Cl,alkyl or alkoxy R.sub.3 =carbocyclic                        or heterocyclic, aromatic nucleus bound via ring                          carbon atom                                          ##STR4##                                                                  ##STR5##                                                                  ##STR6##                                                                  ##STR7##
and wherein;
b. the diamines, diisocyanates, bis-acid chlorides or dicarboxylic acids to be reacted with these compounds contain at least one cyclic structure element.
SUMMARY OF THE INVENTION
It has now been found that one can obtain more than radiation-sensitive soluble preliminary polymers which require substantially shorter exposure times, if in the preparation of relief structures according to the U.S. Pat. Application Ser. No. 444,552, now U.S. Pat. No. 3,957,512, oxyalkylenemethacrylate and -acrylate groups of the following structure: ##STR8## wherein R is hydrogen or methyl and R' is an alkylene group, are used in place of the radiation-reactive groups as shown in (a) above.
The preparation of the soluble preliminary polymers can be carried out as a "one-pot" reaction if hexamethyl phosphoric acid triamide is used as the solvent.
To increase the cross-linking speed, commonly used photo initiators and/or sensitizers can be employed, of. Industrie Chimique Belge, vol. 24, pages 739 to 64 (1959) or Light-Sensitive Systems by J. Kosar, John Wiley & Sons Inc., New York, New York 1965, pages 143 to 46 and 160 to 88. Highly suited sensitizers and/or initiators are, for instance, Michler's ketone and/or benzoin ether, 2-tert-butyl-9,10-anthraquinone, 1,2-benz-9,10-anthraquinone, 4,4'-(diethylamino)-benzophenone.
In addition, the soluble preliminary polymer stages can be combined for this purpose with further radiation-sensitive, copolymerizable compounds. Well suited are, for instance, compounds which contain one or several N-substituted maleimide groups.
With the method of the present invention, relief structures with sharp edges of highly heat-resistant polymers can be prepared, utilizing the increased light sensitivity of the readily available soluble preliminary polymers. It is particularly suitable for the preparation of miniaturized circuits and of protective layers for semiconductor components, also for solder protection layers on multi-layer circuits, as miniaturized insulating layers on electrically conducting and/or semiconducting and/or insulating base materials and for layered circuits, as insulating layers for printed circuits with conductors made by electroplating, as image storage devices that can be read out optically and for printing forms.
The invention will be explained in further detail by the following examples.
EXAMPLE 1 - Preparation of the Soluble Preliminary Polymer Stage
Exactly 21.8 parts by weight pyromellitic acid diandydride were dissolved in 100 parts by volume hexamethyl phosphoric acid triamide, reacted dropwise, while being cooled in ice and stirred, with 26 parts by weight methacrylic acid-2-hydroxyethyl ester and then stirred at room temperature for 4 days. The solution was subsequently reacted dropwise at -5° to -10° C. with 24 parts by weight thionyl chloride and stirring was continued for 1 hour. Then a solution of 19.8 parts by weight 4,4'-diamino diphenyl methane in 50 parts by volume dimethyl acetamide was added dropwise, and stirring was continued, the last part without cooling, for one hour.
The soluble preliminary polymer stage was precipitated by adding the solution dropwise to 2000 parts by volume water and washed with water and ethanol.
Preparation of Relief Structures
About 5 parts by weight of the preliminary polymer stage and 0.1 part by weight Michler's ketone were dissolved in 20 parts by volume dimethyl formamide. Then the solution was filtered and centrifuged on aluminum foil to form uniform films which, after evaporation of the solvent, were 3 μm thick. The films were irradiated with a 500-W very-high-pressure mercury lamp at a distance of 23 cm through a contact pattern for 2 min, immersed for 30 seconds in γ-butyrolactone and washed with toluol. A resolution better than 20 μm was achieved with good edge definition. The samples obtained were annealed for 20 minutes at 300° C. In the process, the resolution and the edge definition remained unchanged and the relief structures then exhibited the excellent thermal, mechanical, electrical and chemical properties of the polyimide polydiphenyl methane pyromelliticimide. The IR spectrum of the annealed samples showed the bands at 5.6 μm typical for the imide structure.
EXAMPLE 2Preparation of the Soluble Preliminary Polymer Stage
Instead of 4,4'-diamino diphenyl, 4,4'-diaminophenyl ether was used, otherwise the procedure was as in Example 1.
Preparation of Relief Structures
Five parts by weight of the preliminary polymer stage, 0.5 parts by weight N-phenyl maleimide and 0.05 parts by weight Michler's ketone were dissolved in 20 parts by volume dimethyl formamide, filtered and centrifuged on aluminum foil to form uniform films, which, after evaporation of the solvent, were 2 μm thick. The films were irradiated, as described in Example 1, for 60 sec, developed for 30 sec in γ-butyrolactone and washed with toluol. A resolution better than 20 μm was achieved with good edge definition. The samples obtained were annealed for 20 min at 300° C. In the process, the resolution and the edge definition remained unchanged and the relief structures then exhibited the excellent thermal, mechanical, electrical and chemical properties of the polyimide polydiphenyl oxide pyromelliticimide. The IR spectrum of the annealed samples showed the bands at 5.6 μm typical for the imide structure.

Claims (7)

What is claimed is:
1. In a method for the preparation of relief structures consisting of highly heat resistant polymers comprising the steps of applying a soluble, photo or radiation-sensitive prepolymer in the form of a film or foil to a substrate, said prepolymer being a poly-addition or polycondensation prepolymer having repeating units of the formula: ##STR9## wherein, X and D each comprise a carbocyclic and/or heterocyclic nucleus;
G is selected from the group consisting of amide, urea or urethane linkages;
R* is an organic radical containing a photo- or radiation induced di- or polymerizable olefinic double bond; and is a component of ester group .[.CO2 R*.]. .Iadd.COR* .Iaddend.said group bound to said nucleus in ortho or peri-position to G;
F is a group capable of reacting with the carbonyl group of .[.CO2 R*.]. .Iadd.COR* .Iaddend.to form a cyclic structure upon heating of the prepolymer to liberate R*OH; and wherein F is arranged in ortho- or peri-position to G;
x is 1 or 2; and
y is 0 or 2;
exposing or irradiating the photo or radiation active layer through a negative pattern, dissolving or stripping the unexposed or unirradiated portions and annealing the relief structure obtained; the improvement which comprises using as said R*, a radical represented by the formula: ##STR10## wherein R is hydrogen or methyl and R' is an alkylene group.
2. The method of claim 8, wherein the radiation-reactive radical R* is a β-oxyethylenemethacrylate radical.
3. The method of claim 1 wherein the soluble prepolymer is irradiated together with compounds which contain one or several N-substituted maleimide groups.
4. The method claim 3 wherein the soluble prepolymer is irradiated together with N-phenyl maleimide.
5. Method of claim 4, wherein the N-phenyl maleimide content is less than 20 percent by weight of the prepolymer.
6. The method of claim 5 wherein the N-phenyl maleimide content is between about 2 and 10 percent by weight of said prepolymer.
7. The method of claim 1 wherein the prepolymer is prepared in hexamethyl phosphoric acid triamide.
US05/972,4321974-08-021978-12-22Method for the preparation of relief structuresExpired - LifetimeUSRE30186E (en)

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Application NumberPriority DateFiling DateTitle
US05/972,432USRE30186E (en)1974-08-021978-12-22Method for the preparation of relief structures

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
DE19742437348DE2437348B2 (en)1974-08-021974-08-02 PROCESS FOR THE PRODUCTION OF RELIEF STRUCTURES
DE24373481974-08-02
US05/598,829US4040831A (en)1974-08-021975-07-24Method for the preparation of relief structures
US05/972,432USRE30186E (en)1974-08-021978-12-22Method for the preparation of relief structures

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Cited By (25)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4283480A (en)1978-10-031981-08-11Diamond Shamrock Industrial Chemicals LimitedPhotopolymerizable compositions, methods for their preparation, and methods for their use in coating substrates
US4287294A (en)1979-05-161981-09-01Siemens AktiengesellschaftMethod for the preparation of relief structures by phototechniques
US4292398A (en)1979-05-161981-09-29Siemens AktiengesellschaftMethod for the preparation of relief structures by phototechniques
US4302233A (en)1979-08-211981-11-24Siemens AktiengesellschaftMethod for the manufacture of a high-tensile-strength light wave-guide
US4515887A (en)1983-08-291985-05-07General Electric CompanyPhotopatternable dielectric compositions, method for making and use
US4540650A (en)1982-09-131985-09-10Merck Patent Gesellschaft Mit Beschrankter HaftungPhotoresists suitable for forming relief structures of highly heat-resistant polymers
US4551522A (en)1985-04-261985-11-05E. I. Du Pont De Nemours And CompanyProcess for making photopolymerizable aromatic polyamic acid derivatives
US4578328A (en)1984-07-091986-03-25General Electric CompanyPhotopatternable polyimide compositions and method for making
US4654415A (en)1984-03-291987-03-31Siemens AktiengesellschaftMethod for the preparation of polyimide and polyisoindoloquinazoline dione precursors
US4701300A (en)1985-01-151987-10-20Merck Patent Gesellschaft Mit Beschrankter HaftungPolyamide ester photoresist formulations of enhanced sensitivity
US4757098A (en)1985-04-171988-07-12Merck Patent Gesellschaft Mit Beschrankter HaftungStabilized solutions of radiation-crosslinkable polymer precursors of highly heat-resistant polymers
US4803147A (en)1987-11-241989-02-07Hoechst Celanese CorporationPhotosensitive polyimide polymer compositions
US4849051A (en)1987-05-181989-07-18Siemens AktiengesellschaftHeat resistant positive resists and method for preparing heat-resistant relief structures
US5006488A (en)1989-10-061991-04-09International Business Machines CorporationHigh temperature lift-off process
US5077378A (en)*1986-10-021991-12-31Hoechst Celanese CorporationPolyamide containing the hexafluoroisopropylidene group
US5270431A (en)*1987-07-231993-12-14Basf AktiengesellschaftPreparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
US5777068A (en)*1994-09-131998-07-07Nippon Zeon Co., Ltd.Photosensitive polyimide resin composition
US5886136A (en)*1995-09-121999-03-23Nippon Zeon Co., Ltd.Pattern forming process
US6160081A (en)1997-10-312000-12-12Nippon Zeon Co., Ltd.Photosensitive polyimide resin composition
US6310135B1 (en)1995-04-182001-10-30Nippon Zeon Co., Ltd.Polyimide resin composition
US20100092879A1 (en)*2007-03-122010-04-15Hitachi Chemical Dupont Microsystems, Ltd.Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US20100159217A1 (en)*2006-06-202010-06-24Hitachi Chemical Dupont Microsystems, LtdNegative-type photosensitive resin composition, method for forming patterns, and electronic parts
US20100258336A1 (en)*2007-10-292010-10-14Hitachi Chemical Dupont Microsystems, Ltd.Positive photosensitive resin composition, method for forming pattern, electronic component
US20110171436A1 (en)*2005-09-222011-07-14Hitachi Chemical Dupont Microsystems, Ltd.Negative-type photosensitive resin composition, pattern forming method and electronic parts
US11294281B2 (en)2019-06-282022-04-05Hutchinson Technology IncorporatedChain extenders and formulations thereof for improving elongation in photosensitive polyimide

Citations (7)

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US3475176A (en)*1966-09-061969-10-28Eastman Kodak CoAzide sensitized photosensitive prepolymer compositions
US3650746A (en)*1969-06-161972-03-21Grace W R & CoDual image formation on separate supports of photocurable composition
US3753720A (en)*1972-01-101973-08-21Grace W R & CoSolder resistant photopolymer compositions
US3801638A (en)*1971-03-121974-04-02Gaf CorpTriacrylyldiethylenetriamine,method of producing the same,and photopolymerization process and system utilizing the same
US3847767A (en)*1973-03-131974-11-12Grace W R & CoMethod of producing a screen printable photocurable solder resist
US3858510A (en)*1971-03-111975-01-07Asahi Chemical IndRelief structures prepared from photosensitive compositions
US3957512A (en)*1973-02-221976-05-18Siemens AktiengesellschaftMethod for the preparation of relief structures

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3475176A (en)*1966-09-061969-10-28Eastman Kodak CoAzide sensitized photosensitive prepolymer compositions
US3650746A (en)*1969-06-161972-03-21Grace W R & CoDual image formation on separate supports of photocurable composition
US3858510A (en)*1971-03-111975-01-07Asahi Chemical IndRelief structures prepared from photosensitive compositions
US3801638A (en)*1971-03-121974-04-02Gaf CorpTriacrylyldiethylenetriamine,method of producing the same,and photopolymerization process and system utilizing the same
US3753720A (en)*1972-01-101973-08-21Grace W R & CoSolder resistant photopolymer compositions
US3957512A (en)*1973-02-221976-05-18Siemens AktiengesellschaftMethod for the preparation of relief structures
US3847767A (en)*1973-03-131974-11-12Grace W R & CoMethod of producing a screen printable photocurable solder resist

Cited By (33)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4283480A (en)1978-10-031981-08-11Diamond Shamrock Industrial Chemicals LimitedPhotopolymerizable compositions, methods for their preparation, and methods for their use in coating substrates
US4287294A (en)1979-05-161981-09-01Siemens AktiengesellschaftMethod for the preparation of relief structures by phototechniques
US4292398A (en)1979-05-161981-09-29Siemens AktiengesellschaftMethod for the preparation of relief structures by phototechniques
US4302233A (en)1979-08-211981-11-24Siemens AktiengesellschaftMethod for the manufacture of a high-tensile-strength light wave-guide
US4540650A (en)1982-09-131985-09-10Merck Patent Gesellschaft Mit Beschrankter HaftungPhotoresists suitable for forming relief structures of highly heat-resistant polymers
US4515887A (en)1983-08-291985-05-07General Electric CompanyPhotopatternable dielectric compositions, method for making and use
US4654415A (en)1984-03-291987-03-31Siemens AktiengesellschaftMethod for the preparation of polyimide and polyisoindoloquinazoline dione precursors
US4578328A (en)1984-07-091986-03-25General Electric CompanyPhotopatternable polyimide compositions and method for making
US4701300A (en)1985-01-151987-10-20Merck Patent Gesellschaft Mit Beschrankter HaftungPolyamide ester photoresist formulations of enhanced sensitivity
US4757098A (en)1985-04-171988-07-12Merck Patent Gesellschaft Mit Beschrankter HaftungStabilized solutions of radiation-crosslinkable polymer precursors of highly heat-resistant polymers
US4551522A (en)1985-04-261985-11-05E. I. Du Pont De Nemours And CompanyProcess for making photopolymerizable aromatic polyamic acid derivatives
EP0203372A3 (en)*1985-04-261987-10-14E.I. Du Pont De Nemours And CompanyProcess for making photopolymerizable aromatic polyamic acid derivatives
US5077378A (en)*1986-10-021991-12-31Hoechst Celanese CorporationPolyamide containing the hexafluoroisopropylidene group
US4849051A (en)1987-05-181989-07-18Siemens AktiengesellschaftHeat resistant positive resists and method for preparing heat-resistant relief structures
US5270431A (en)*1987-07-231993-12-14Basf AktiengesellschaftPreparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
US4803147A (en)1987-11-241989-02-07Hoechst Celanese CorporationPhotosensitive polyimide polymer compositions
US5006488A (en)1989-10-061991-04-09International Business Machines CorporationHigh temperature lift-off process
US5777068A (en)*1994-09-131998-07-07Nippon Zeon Co., Ltd.Photosensitive polyimide resin composition
US6310135B1 (en)1995-04-182001-10-30Nippon Zeon Co., Ltd.Polyimide resin composition
US6734248B2 (en)1995-04-182004-05-11Nippon Zeon Co., Ltd.Pattern forming process using polyimide resin composition
US6743851B2 (en)1995-04-182004-06-01Nippon Zeon Co., Ltd.Polyimide film
US5886136A (en)*1995-09-121999-03-23Nippon Zeon Co., Ltd.Pattern forming process
US6160081A (en)1997-10-312000-12-12Nippon Zeon Co., Ltd.Photosensitive polyimide resin composition
US8758977B2 (en)2005-09-222014-06-24Hitachi Chemical Dupont Microsystems, Ltd.Negative-type photosensitive resin composition, pattern forming method and electronic parts
US8871422B2 (en)2005-09-222014-10-28Hitachi Chemical Dupont Microsystems Ltd.Negative-type photosensitive resin composition, pattern forming method and electronic parts
US20110171436A1 (en)*2005-09-222011-07-14Hitachi Chemical Dupont Microsystems, Ltd.Negative-type photosensitive resin composition, pattern forming method and electronic parts
US20100159217A1 (en)*2006-06-202010-06-24Hitachi Chemical Dupont Microsystems, LtdNegative-type photosensitive resin composition, method for forming patterns, and electronic parts
US20100092879A1 (en)*2007-03-122010-04-15Hitachi Chemical Dupont Microsystems, Ltd.Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US8298747B2 (en)2007-03-122012-10-30Hitachi Chemical Dupont Microsystems, Ltd.Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US8420291B2 (en)2007-10-292013-04-16Hitachi Chemical Dupont Microsystems, Ltd.Positive photosensitive resin composition, method for forming pattern, electronic component
US20100258336A1 (en)*2007-10-292010-10-14Hitachi Chemical Dupont Microsystems, Ltd.Positive photosensitive resin composition, method for forming pattern, electronic component
US11294281B2 (en)2019-06-282022-04-05Hutchinson Technology IncorporatedChain extenders and formulations thereof for improving elongation in photosensitive polyimide
US12386258B2 (en)2019-06-282025-08-12Hutchinson Technology IncorporatedChain extenders and formulations thereof for improving elongation in photosensitive polyimide

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