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USD1042340S1 - Tubular reactor - Google Patents

Tubular reactor
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Publication number
USD1042340S1
USD1042340S1US29/830,627US202229830627FUSD1042340SUS D1042340 S1USD1042340 S1US D1042340S1US 202229830627 FUS202229830627 FUS 202229830627FUS D1042340 SUSD1042340 SUS D1042340S
Authority
US
United States
Prior art keywords
tubular reactor
view
elevational view
design
tubular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/830,627
Inventor
Yusaku OKAJIMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric CorpfiledCriticalKokusai Electric Corp
Assigned to Kokusai Electric CorporationreassignmentKokusai Electric CorporationASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: OKAJIMA, YUSAKU
Application grantedgrantedCritical
Publication of USD1042340S1publicationCriticalpatent/USD1042340S1/en
Activelegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

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Description

FIG.1 is a front, top and left side perspective view of a tubular reactor showing my new design;
FIG.2 is a front elevational view thereof;
FIG.3 is a right side elevational view thereof;
FIG.4 is a left side elevational view thereof;
FIG.5 is a rear elevational view thereof;
FIG.6 is a top plan view thereof;
FIG.7 is a bottom plan view thereof; and,
FIG.8 is a cross-sectional view taken along line8-8 inFIG.3.
The dashed-dot-dashed lines represent the boundary lines of the claimed design. The broken lines are included for the purpose of illustrating portions of the article that form no part of the claimed design.

Claims (1)

    CLAIM
  1. I claim the ornamental design for a tubular reactor, as shown and described.
US29/830,6272021-09-152022-03-14Tubular reactorActiveUSD1042340S1 (en)

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
JP2021019931FJP1713189S (en)2021-09-152021-09-15
JP2021019931D2021-09-15

Publications (1)

Publication NumberPublication Date
USD1042340S1true USD1042340S1 (en)2024-09-17

Family

ID=81209957

Family Applications (1)

Application NumberTitlePriority DateFiling Date
US29/830,627ActiveUSD1042340S1 (en)2021-09-152022-03-14Tubular reactor

Country Status (2)

CountryLink
US (1)USD1042340S1 (en)
JP (1)JP1713189S (en)

Citations (23)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5618349A (en)*1993-07-241997-04-08Yamaha CorporationThermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
USD405429S (en)*1997-01-311999-02-09Tokyo Electron LimitedProcessing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en)*1997-08-201999-02-09Tokyo Electron Ltd.Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en)*1997-09-121999-09-07Kokusai Bti CorporationProcess tube with in-situ gas preheating
USD424024S (en)*1997-01-312000-05-02Tokyo Electron LimitedQuartz process tube
US20030221779A1 (en)*2002-03-282003-12-04Kazuyuki OkudaSubstrate processing apparatus
USD590359S1 (en)*2006-02-202009-04-14Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers or the like
USD594488S1 (en)*2007-04-202009-06-16Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
USD600659S1 (en)*2006-09-122009-09-22Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
US20090250005A1 (en)*2008-04-032009-10-08Tokyo Electron LimitedReaction tube and heat processing apparatus for a semiconductor process
USD618638S1 (en)2008-05-092010-06-29Hitachi Kokusai Electric, Inc.Reaction tube
USD619630S1 (en)*2007-05-082010-07-13Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
USD742339S1 (en)2014-03-122015-11-03Hitachi Kokusai Electric Inc.Reaction tube
TWD175510S (en)2015-09-182016-05-11亞智科技股份有限公司 Adsorption element
USD770993S1 (en)*2015-09-042016-11-08Hitachi Kokusai Electric Inc.Reaction tube
USD772824S1 (en)*2015-02-252016-11-29Hitachi Kokusai Electric Inc.Reaction tube
US20160368031A1 (en)*2015-06-172016-12-22Vistec Electron Beam GmbhParticle beam apparatus and method for operating a particle beam apparatus
USD778457S1 (en)*2015-02-232017-02-07Hitachi Kokusai Electric Inc.Reaction tube
USD778458S1 (en)*2015-02-232017-02-07Hitachi Kokusai Electric Inc.Reaction tube
USD791090S1 (en)*2015-09-042017-07-04Hitachi Kokusai Electric Inc.Reaction tube
TWD230585S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube
TWD230586S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube
TWD230584S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5618349A (en)*1993-07-241997-04-08Yamaha CorporationThermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
USD405429S (en)*1997-01-311999-02-09Tokyo Electron LimitedProcessing tube for use in a semiconductor wafer heat processing apparatus
USD424024S (en)*1997-01-312000-05-02Tokyo Electron LimitedQuartz process tube
USD405431S (en)*1997-08-201999-02-09Tokyo Electron Ltd.Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en)*1997-09-121999-09-07Kokusai Bti CorporationProcess tube with in-situ gas preheating
US20030221779A1 (en)*2002-03-282003-12-04Kazuyuki OkudaSubstrate processing apparatus
USD590359S1 (en)*2006-02-202009-04-14Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers or the like
USD600659S1 (en)*2006-09-122009-09-22Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
USD594488S1 (en)*2007-04-202009-06-16Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
USD619630S1 (en)*2007-05-082010-07-13Tokyo Electron LimitedProcess tube for manufacturing semiconductor wafers
US20090250005A1 (en)*2008-04-032009-10-08Tokyo Electron LimitedReaction tube and heat processing apparatus for a semiconductor process
USD618638S1 (en)2008-05-092010-06-29Hitachi Kokusai Electric, Inc.Reaction tube
USD742339S1 (en)2014-03-122015-11-03Hitachi Kokusai Electric Inc.Reaction tube
USD778457S1 (en)*2015-02-232017-02-07Hitachi Kokusai Electric Inc.Reaction tube
USD778458S1 (en)*2015-02-232017-02-07Hitachi Kokusai Electric Inc.Reaction tube
USD772824S1 (en)*2015-02-252016-11-29Hitachi Kokusai Electric Inc.Reaction tube
US20160368031A1 (en)*2015-06-172016-12-22Vistec Electron Beam GmbhParticle beam apparatus and method for operating a particle beam apparatus
USD770993S1 (en)*2015-09-042016-11-08Hitachi Kokusai Electric Inc.Reaction tube
USD791090S1 (en)*2015-09-042017-07-04Hitachi Kokusai Electric Inc.Reaction tube
TWD175510S (en)2015-09-182016-05-11亞智科技股份有限公司 Adsorption element
TWD230585S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube
TWD230586S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube
TWD230584S (en)*2022-03-012024-04-01日商國際電氣股份有限公司 (日本) reaction tube

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Notification of Review Opinions dated May 2, 2023 in corresponding TW Application 111300907.

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Publication numberPublication date
JP1713189S (en)2022-04-21

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