US9964863B1 - Post exposure processing apparatus - Google Patents

Abstract

Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Patent Application No. 62/436,873, filed Dec. 20, 2016, the entirety of which is herein incorporated by reference.

BACKGROUNDField

Implementations of the present disclosure generally relate to apparatus for processing substrates after lithographic exposure.

Description of the Related Art

Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors and resistors) on a single chip. Photolithography is a process that may be used to form components on a chip. Generally the process of photolithography involves a few basic stages. Initially, a photoresist layer is formed on a substrate. A chemically amplified photoresist may include a resist resin and a photoacid generator. The photoacid generator, upon exposure to electromagnetic radiation in the subsequent exposure stage, alters the solubility of the photoresist in the development process. The electromagnetic radiation may have any suitable wavelength, for example, a 193 nm ArF laser, an electron beam, an ion beam, or other suitable source.

In an exposure stage, a photomask or reticle may be used to selectively expose certain regions of the substrate to electromagnetic radiation. Other exposure methods may be maskless exposure methods. Exposure to light may decompose the photo acid generator, which generates acid and results in a latent acid image in the resist resin. After exposure, the substrate may be heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin, changing the solubility of the resist during the subsequent development process.

After the post-exposure bake, the substrate, particularly the photoresist layer, may be developed and rinsed. Depending on the type of photoresist used, regions of the substrate that were exposed to electromagnetic radiation may either be resistant to removal or more prone to removal. After development and rinsing, the pattern of the mask is transferred to the substrate using a wet or dry etch process.

In a recent development, an electrode assembly is utilized to generate an electric field to a photoresist layer disposed on the substrate prior to or after an exposure process so as to modify chemical properties of a portion of the photoresist layer where the electromagnetic radiation is transmitted to for improving lithography exposure/development resolution. However, the challenges in implementing such systems have not yet been adequately overcome.

Therefore, there is a need for apparatus for improving post exposure bake and development processes.

SUMMARY

In one implementation, a platform apparatus is provided. The apparatus includes a factory interface, a plumbing module, and a process module disposed between the factory interface and the plumbing module. The process module includes a central region having a robot disposed therein and a plurality of process stations disposed about the central region. Each process station includes a process chamber and a post process chamber in a stacked arrangement.

In another implementation, a platform apparatus is provided. The apparatus includes a factory interface, a plumbing module, and a process module disposed between the factory interface and the plumbing module. The process module includes a central region having a robot disposed therein. The robot includes a plurality of end effectors and the end effectors are moveable in three axes. A plurality of process stations are disposed about the central region and each process station includes a process chamber and a post process chamber in a stacked arrangement.

In yet another implementation, a platform apparatus is provided. The apparatus includes a factory interface and an intermediate module disposed adjacent the factory interface. A buffer station is disposed in the intermediate module and a support module is disposed adjacent the intermediate module. A plurality of cleaning stations are disposed in the support module and a process module is disposed adjacent to the support module. The process module includes a plurality of process stations and each process station includes a process chamber and a post process chamber in a stacked arrangement and a plumbing module dedicated to each process station.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to implementations, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary implementations and are therefore not to be considered limiting of its scope, may admit to other equally effective implementations.

FIG. 1 illustrates a schematic, cross-sectional view of a process chamber according to implementations described herein.

FIG. 2 illustrates a detailed view of a portion of the process chamber ofFIG. 1 according to implementations described herein.

FIG. 3 illustrates a post process chamber according to implementations described herein.

FIG. 4 illustrates a perspective view of a process platform according to implementations described herein.

FIG. 5 illustrates a schematic, plan view of the process platform ofFIG. 4 according to implementations described herein.

FIG. 6 is a schematic, side view of a process chamber and a post-process chamber arrangement in the process platform ofFIG. 4 according to implementations described herein.

FIG. 7 is a schematic, side view of a process chamber and a post-process chamber arrangement in the process platform ofFIG. 4 according to implementations described herein.

FIG. 8 illustrates a perspective view of a process platform according to implementations described herein.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation.

DETAILED DESCRIPTION

Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers implemented on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

FIG. 1 illustrates a schematic, cross-sectional view of aprocess chamber100 according to implementations described herein. In one implementation, theprocess chamber100 is configured for performing immersion field guided post exposure bake (iFGPEB) processes. Thechamber100 is positioned in a vertical orientation such that when a substrate is being processed, a major axis of the substrate is oriented vertically and a minor axis of the substrate is oriented horizontally. Thechamber100 includes achamber body102, which is manufactured from a metallic material, such as aluminum, stainless steel, and alloys and combinations thereof. Alternatively, thechamber body102 is manufactured from polymer materials, such as polytetrafluoroethylene (PTFE), or high temperature plastics, such as polyether ether ketone (PEEK).

Thebody102 defines, at least partially, aprocess volume104 therein. For example, asidewall148 of thebody102 defines a diameter of theprocess volume104. A major axis of theprocess volume104 is oriented vertically and a minor axis of theprocess volume104 is oriented horizontally. A first plurality offluid ports126 are formed in thechamber body102 through thesidewall148. A second plurality offluid ports128 are also formed in thesidewall148 of thechamber body102 opposite the first plurality offluid ports126. The first plurality offluid ports126 are in fluid communication with aprocess fluid source132 viafirst conduit134. The second plurality offluid ports128 are in fluid communication with afluid outlet136 via asecond conduit138. Theprocess fluid source132, either alone or in combination with other apparatus, is configured to preheat process fluid to a temperature of between about 70° C. and about 130° C., such as about 110° C., prior to the fluid entering theprocess volume104.

In one implementation, apurge gas source150 is also in fluid communication with theprocess volume104 via the firstfluid conduit134 and the first plurality offluid ports126. Gases provided by thepurge gas source150 may include nitrogen, argon, inert gases and the like to purge theprocessing volume104 during or after iFGPEB processing. When desired, purge gases may be exhausted from theprocessing volume104 via thefluid outlet136.

Adoor106 is operably coupled to thechamber body102. In the illustrated implementation, thedoor106 is oriented in a processing position such that thedoor106 is disposed adjacent to and abuts thechamber body102. Thedoor106 is formed from materials similar to the materials selected for thechamber body102. Alternatively, the chamber body may be formed from a first material, such as a polymeric material, and thedoor106 may be formed from a second material different from the first material, such as a metallic material. Ashaft107 extends through thedoor106 and provides an axis (i.e. the Z-axis) about which thedoor106 rotates to open and close thedoor106.

Thedoor106 may be coupled to a track (not shown) and thedoor106 is configured to translate along the track in the X-axis. A motor (not shown) may be coupled to thedoor106 and/or the track to facilitate movement of thedoor106 along the X-axis. Although thedoor106 is illustrated in a closed processing position, opening and closing of thedoor106 may be performed by moving thedoor106 away from thechamber body102 along the X-axis prior to rotating thedoor106 about the Z-axis. For example, thedoor106 may rotate about 90° from the illustrated processing position to a loading position such that positioning of asubstrate110 on afirst electrode108 can be performed with a reduced probability of substrate breakage during loading.

Abacking plate112 is coupled to thedoor106 and thefirst electrode108 is coupled to thebacking plate112. Thebacking plate112 is formed from materials similar to thedoor106 or thechamber body102, depending on the desired implementation. Thefirst electrode108 may be formed from an electrically conductive metallic material. In addition, the material utilized for thefirst electrode108 may be a non-oxidative material. The materials selected for thefirst electrode108 provide for desirable current uniformity and low resistance across the surface of thefirst electrode108. In certain implementations, thefirst electrode108 is a segmented electrode configured to introduce voltage non-uniformities across the surface of thefirst electrode108. In this implementation, a plurality of power sources are utilized to power different segments of thefirst electrode108.

Thefirst electrode108 is sized to accommodate attachment of thesubstrate110 thereon. Thefirst electrode108 is also sized to allow for positioning adjacent thechamber body102 and theprocess volume104. In one implementation, thefirst electrode108 is fixably coupled to thebacking plate112 and thedoor106. In another implementation, thefirst electrode108 is rotatably coupled to thebacking plate112 and thedoor106. In this implementation, amotor109 is coupled to thedoor106 and is configured to impart rotational movement on either thebacking plate112 or thefirst electrode108. In one implementation, thefirst electrode108 is configured as a ground electrode.

Avacuum source116 is in fluid communication with a substrate receiving surface of thefirst electrode108. Thevacuum source116 is coupled to aconduit114 which extends from thevacuum source116 through thedoor106, thebacking plate112, and thefirst electrode108. Generally, thevacuum source116 is configured to vacuum chuck thesubstrate110 to thefirst electrode108.

Aheat source118, atemperature sensing apparatus120, apower source122, and asensing apparatus124 are coupled to thefirst electrode108. Theheat source118 provides power to one or more heating elements, such as resistive heaters, disposed within thefirst electrode108. It is also contemplated that theheat source118 may provide power to heating elements disposed within thebacking plate112. Theheat source118 is generally configured to heat either thefirst electrode108 and/or or thebacking plate112 to facilitate preheating of fluid during iFGPEB processes. Theheat source118 may also be utilized to maintain a desired temperature of the process fluid during substrate processing in addition to or distinct from preheating the process fluid. In one implementation, theheat source118 is configured to heat thefirst electrode108 to a temperature of between about 70° C. and about 130° C., such as about 110° C.

Thetemperature sensing apparatus120, such as a thermocouple or the like, is communicatively coupled to theheat source118 to provide temperature feedback and facilitate heating of thefirst electrode108. Thepower source122 is configured to supply, for example, between about 1 V and about 20 kV to thefirst electrode108. Depending on the type of process fluid utilized, current generated by thepower source122 may be on the order of tens of nano-amps to hundreds of milliamps. In one implementation, thepower source122 is configured to generate electric fields ranging from about 1 kV/m to about 2 MV/m. In some implementations, thepower source122 is configured to operate in either voltage controlled or current controlled modes. In both modes, the power source may output AC, DC, and/or pulsed DC waveforms. Square or sine waves may be utilized if desired. Thepower source122 may be configured to provide power at a frequency of between about 0.1 Hz and about 1 MHz, such as about 5 kHz. The duty cycle of the pulsed DC power or AC power may be between about 5% and about 95%, such as between about 20% and about 60%.

The rise and fall time of the pulsed DC power or AC power may be between about 1 ns and about 1000 ns, such as between about 10 ns and about 500 ns. Thesensing apparatus124, such as a voltmeter or the like, is communicatively coupled to thepower source122 to provide electrical feedback and facilitate control of the power applied to thefirst electrode108. Thesensing apparatus124 may also be configured to sense a current applied to thefirst electrode108 via thepower source122.

Asecond electrode130 is coupled to thechamber body102 adjacent theprocess volume104 and partially defined theprocess volume104. Similar to thefirst electrode108, thesecond electrode130 is coupled to aheat source140, atemperature sensing apparatus142, apower source144, and asensing apparatus146. Theheat source140, atemperature sensing apparatus142, apower source144, and asensing apparatus146 may function similarly to theheat source118, atemperature sensing apparatus120, apower source122, and asensing apparatus124. In one implementation, thesecond electrode130 is an actively powered electrode and thefirst electrode108 is a ground electrode. As a result of the aforementioned electrode arrangement, acid generated upon exposure of a resist disposed on thesubstrate110 may be modulated during iFGPEB processing to improve patterning and resist de-protection characteristics.

FIG. 2 illustrates a detailed view of a portion of theprocess chamber100 ofFIG. 1 according to implementations described herein. Theprocess volume104 has awidth214 defined between thesubstrate110 and thesecond electrode130. In one implementation, thewidth214 of theprocess volume104 is between about 1.0 mm and about 10 mm, such as between about 4.0 mm and about 4.5 mm. The relatively small gap between thesubstrate110 and thesecond electrode130 reduces the volume of theprocess volume104 which enables utilization of reduced quantities of process fluid during iFGPEB processing. In addition, thewidth214, which defines a distance between thesecond electrode130 and the substrate, is configured to provide for a substantially uniform electrical field across the surface of thesubstrate110. The substantially uniform field provides for improved patterning characteristics as a result of iFGPEB processing. Another benefit of the gap having thewidth214 is a reduction in voltage utilized to generate the desired electrical field.

In operation, theprocess volume104 is filled with process fluid during iFGPEB processing. In one implementation, a first flow rate utilized to fill theprocess volume104 with process fluid prior to activation of an electric field is between about 5 L/min and about 10 L/min. Once theprocess volume104 is filled with process fluid, the electric field is applied and a second flow rate of process fluid between about 0 L/min and about 5 L/min is utilized during iFGPEB processing. In one implementation, the process fluid fill time is between about 1 second and about 5 seconds and the processing time is between about 30 seconds and about 90 seconds, such as about 60 seconds. In one implementation, process fluid continues to flow during iFGPEB processing. In this implementation, the volume of theprocess volume104 is exchanged between about 1 time and about 10 times per substrate processed. In another implementation, the process fluid is predominantly static during processing. In this implementation, the volume of theprocess volume104 is not exchanged during substrate processing of each substrate.

In another operational implementation, a first flow rate is utilized to initially fill theprocess volume104. The first flow rate is less than 5 L/min for an amount of time to fill theprocess volume104 such that thefirst fluid ports126 are submerged. A second flow rate of greater than 5 L/min is them utilized to fill the remainder of theprocess volume104. During application of electric field in iFGPEB processing, a third flow rate of less than 5 L/min is utilized. The flow rate modulation between the first and second flow rates is configured to reduce turbulence of the fluid with in theprocess volume104 and reduce or eliminate the formation of bubbles therein. However, if bubbles are formed, the buoyancy of the bubbles enables the bubbles to escape from theprocess volume104 via thesecond fluid ports128 in order to minimize the insulating effect of the bubbles on the electric field during iFGPEB processing. Accordingly, a more uniform electric field may be achieved to improve iFGPEB processing.

To reduce the probability of process fluid leakage out of the process volume, a plurality of O-rings are utilized to maintain the fluid containment integrity of the process volume. A first O-ring202 is disposed in thefirst electrode108 on the substrate receiving surface of thefirst electrode108. The first O-ring202 may be positioned on the first electrode radially inward from an outer diameter of thesubstrate110.

In one example, the first O-ring202 is positioned on the first electrode108 a distance between about 1 mm and about 10 mm radially inward from the outer diameter of thesubstrate110. The first O-ring is positioned to contact the backside of thesubstrate110 when the substrate is chucked to thefirst electrode108. A first surface206 of thesidewall148 is shaped and sized to contact an edge region of thesubstrate110 when thesubstrate110 is in the illustrated processing position.

In one implementation, the first O-ring202 is disposed in thefirst electrode108 opposite the first surface206 of thesidewall148. It is contemplated that the first O-ring202 may prevent the leakage of process fluid from theprocess volume104 to a region behind thesubstrate110, such as the substrate supporting surface of thefirst electrode108. Advantageously, vacuum chucking of thesubstrate110 is maintained and process fluid is prevented from reaching thevacuum source116.

Thefirst electrode108 has aledge210 disposed radially outward of the first O-ring. Theledge210 is disposed radially outward from the position of the first O-ring202. A second O-ring204 is coupled to thefirst electrode108 radially outward of theledge210. A second surface208 of thesidewall148 is shaped and sized to contact thefirst electrode108 adjacent to and extending radially inward from the outer diameter of thefirst electrode108. In one implementation, the second O-ring204 is disposed in contact with the second surface208 of thesidewall148 when thesubstrate110 is disposed in a processing position. It is contemplated that the second O-ring204 may prevent the leakage of process fluid from theprocess volume108 beyond the outer diameter of thefirst electrode108.

A third O-ring212 is coupled to thesecond electrode130 along an outer diameter of thesecond electrode130. The third O-ring212 is also disposed in contact with thesidewall148 of thechamber body102. The third O-ring212 is configured to prevent process fluid from flowing behind thesecond electrode130. Each of the O-rings202,204,212 are formed from an elastomeric material, such as a polymer or the like. In one implementation, the O-rings202,204,212 have a circular cross-section. In another implementation, the O-rings202,204,212 have a non-circular cross-section, such as a triangular cross section or the like. It is also contemplated that each of the O-rings202,204,212 are subjected to a compressive force suitable to prevent the passage of process fluid beyond the O-rings202,204,212 and fluidly seal theprocess volume104.

FIG. 3 illustrates apost process chamber300 according to implementations described herein. After iFGPEB processing of a substrate in theprocess chamber100, the substrate is transferred to thepost process chamber300. Thepost process chamber300 includes achamber body302 defining aprocess volume304 and apedestal308 disposed in theprocess volume304. Asubstrate306 positioned on thepedestal308 is post processed by cooling and rinsing thesubstrate306. By combining cooling and rinsing, the bake to cool delay of substrate processing is minimized.

When thesubstrate306 is positioned on thepedestal308, the substrate is vacuum chucked by application of vacuum from avacuum source314. Cooling of thesubstrate306 begins once thesubstrate306 is chucked.Fluid conduits310 are formed in thepedestal308 and thefluid conduits310 are in fluid communication with a coolingfluid source312. Cooling fluid is flowed through thefluid conduits310 to cool thesubstrate306.

During cooling, thesubstrate306 is also rinsed to remove any remaining process fluid still present on the substrate surface. Rinse fluid is dispensed onto the device side of thesubstrate306 from afluid delivery arm318 which may includefluid delivery nozzles320. Rinse fluid, such as de-ionized water or the like, is provided from a rinsefluid source322 via thearm318 and thenozzles320.

After rinsing and cooling, thesubstrate306 is optionally spin dried by rotating thepedestal308. Thepedestal308 is coupled to apower source316 which enables rotation of thepedestal308. During spin drying of thesubstrate306, ashield324 is raised to collect fluid spun off of thesubstrate306. In certain implementations, theshield324 is also raised during cooling and/or rinsing of thesubstrate306. Theshield324 is ring like in shape and sized with an inner diameter greater than a diameter of thepedestal308. Theshield324 is also disposed radially outward of thepedestal308. Theshield324 is coupled to amotor328 which raises and lowers theshield324 such that theshield324 extends above thesubstrate306. Fluid collected during spin drying by theshield324 is removed from theprocess volume304 via adrain326. It is noted that during cooling and rinsing of thesubstrate306, theshield324 may optionally be disposed in a lowered position and subsequently raised during spin drying of thesubstrate306. Theshield324 may also be lowered during loading and unloading of thesubstrate306.

Once thesubstrate306 has been dried, resist on thesubstrate306 is developed by the application of a developer, such as tetramethylammonium hydroxide (TMAH). In one implementation, the developer is dispensed from thearm318 andnozzles320. After development, thesubstrate306 is rinsed with deionized water and dried again to prepare thesubstrate306 for subsequent processing.

FIG. 4 illustrates a perspective view of aprocess platform400 according to implementations described herein. One example of theprocess platform400 is the BLAZER™ platform, available from Applied Materials, Inc., Santa Clara, Calif. It is contemplated that other suitably configured platforms from other manufacturers may also be utilized in accordance with the implementations described herein.

Theprocess platform400 includes afactory interface402, aprocess module404, and aplumbing module406. Thefactory interface402 is coupled to theprocess module404 and theprocess module404 is coupled to theplumbing module406. Thefactory interface402 includes a plurality of front opening unified pods (FOUPs)502, such as fourFOUPs502. However, it is contemplated that thefactory interface402 may utilize a greater or lesser number ofFOUPs502, depending upon the throughput capability of theprocess module404.

Theprocess module404 includes a plurality of process chambers. In one implementation, theprocess module404 includes a plurality ofprocess chambers100 and a plurality ofpost process chambers300. It is contemplated that theprocess module404 may be implemented with corresponding numbers ofprocess chambers100 andpost process chambers300. In one example, theprocess module404 includes fourprocess chambers100 and fourpost process chambers300. In another example, theprocess module404 includes six process chamber s100 and sixpost process chambers300. It is believed that utilizing pairs of process and postprocess chambers100,300 provides for improved process efficiency and increased throughput.

Theprocess module404 may also include a plurality of cleaning chambers. The cleaning chambers may be utilized in a variety of implementations, for example, pre-cleaning substrates prior to processing in theprocess chambers100 or cleaning substrates after processing thepost process chambers300. In an operational implementation, a substrate enters theprocess platform400 through one of theFOUPs502 where the substrate is transferred through thefactory interface402 to theprocess module404. The substrate is then processed in one of theprocess chambers100 and transferred to a corresponding one of thepost process chambers300. As described above, cleaning of the substrate is optionally performed before or after iFGPEB processing and development in theprocess module404. Upon completion of the iFGPEB processing and any desired post process cleaning, the substrate is returned to thefactory interface402 and one of theFOUPs502.

Theplumbing module406 includes a full complement of apparatus for performing iFGPEB processing utilizing theprocess chambers100 andpost process chambers300 disposed in theprocess module404. Theplumbing module406 generally includes all fluid handling components for each of the chambers of theprocess module404. As such, the plumbing components are disposed in a single location which is easily accessible for maintenance. In addition, theplumbing module406 enables a single location for supply and return of fluids utilized in iFGPEB processing. Theplumbing module406 may also include in-situ fluid analysis apparatus. For example, the fluids utilized in iFGPEB processing may be analyzed for various aspects, such as temperature via a thermocouple, flow rate via a flow meter, etc. The ability to gather fluid data and other process data in-situ provides for more efficient operation of theplatform400 by enabling real time process parameter modulation.

Theplumbing module406 is configured to share certain components between theprocess chambers100 andpost process chambers300 in order to reduce the cost associated with the plumbing apparatus complement. For example, instead of eachprocess chamber100 having individual plumbing components dedicated to asingle process chamber100, the plumbing module utilized plumbing apparatus which are shared between the plurality of theprocess chambers100. Similarly, thepost process chambers300 utilize plumbing apparatus which are shared between the plurality ofpost process chamber300.

For operating theprocess chamber100, theplumbing module406 includes a process fluid source reservoir having a volume sufficient to supply process fluid to theprocess chambers100 in a sequential manner. For example, the process fluid source reservoir (an associated complement of plumbing components, e.g. flow meters, flow controllers, conduits, heaters, filters, valves, drains, etc.) is configured to continuously provide process fluid in a volume sufficient to operate theprocess chambers100 sequentially. In another implementation, the process fluid reservoir and associated plumbing apparatus complement is configured to provide a volume of process fluid sufficient to operate the plurality ofprocess chambers100 concurrently.

Similarly, for operation of thepost process chambers300, theplumbing module406 includes at least a rinse fluid source reservoir, a cooling fluid source reservoir, a developer source reservoir and associated plumbing apparatus complement. Thepost process chambers300 may be operated sequentially or concurrently and the plumbing apparatus complement and reservoirs are configured to facilitate processing in either implementation by providing sufficient volumes of fluid to enable efficient operation of thepost process chambers300.

FIG. 5 illustrates a schematic, plan view of theprocess platform400 ofFIG. 4 according to implementations described herein. Theprocess module404, which includes theprocess chambers100 andpost process chambers300, is configured with pairs ofchambers100 and300 inprocess stations504,506,508,510. While four process stations are illustrated, it is contemplated that a lesser or greater number of process stations, such as six process stations, may be used according to the implementations described herein. Theprocess stations504,506,508,510 are disposed about a periphery of theprocess module404 and arobot512 is disposed in acentral region514 between the plurality ofprocess stations504,506,508,510. Thus, theprocess stations504,506,508,510 are disposed adjacent to thecentral region514 and are positioned in proximity to therobot512.

In one implementation, therobot512 has an arm with a single end effector sized to carry substrates betweenvarious modules402,404 andprocess stations504,506,508,510. In another implementation, therobot512 has two arms, each arm having an end effector, for carrying the substrates. In this implementation, a first end effector may be utilized to retrieve substrates from thefactory interface402 and deliver the substrates to aprocess chamber100 of one of theprocess stations504,506,508,510. A second end effector is utilized to transfer the substrate processed in theprocess chamber100 to thepost process chamber300 of the same process station. The second effector may be utilized to cool substrates retrieved from theprocess chamber100. In this implementation, the second end effector may be cooled, for example, by a fluid, and the surface area of the second end effector may be sufficiently large to contact the substrates to improve the rate of substrate cooling during substrate transfer. Subsequently, the first end effector may be utilized to transfer the substrate from thepost process chamber300 back to thefactory interface402. Advantageously, it is contemplated that utilizing a robot with different end effectors designed for certain transfer operations may reduce the probability of substrate contamination between different process operations and improve throughput.

Therobot512 moves linearly in the X direction to retrieve substrates from thefactory interface402 and to deliver the substrates tovarious process stations504,506,508,510 within theprocess module404. Therobot512 also moves in the Y and Z directions to deliver and retrieve substrates from thechambers100,300 of theprocess stations504,506,508,510.

In an operational implementation, a substrate is delivered to aprocess chamber100 of one of theprocess stations504,506,508,510 and iFGPEB processing is performed for an amount of time between about 30 seconds and about 90 seconds, for example, about 60 seconds. During processing of the substrate, therobot512 may transfer other substrates betweenchambers100,300 of theprocess stations504,506,508,510 or to and from thefactory interface402. After the substrate has been iFGPEB processed in theprocess chamber100, therobot512 transfers the substrate to thepost process chamber300 of the same process station having theprocess chamber100 which iFGPEB processed the substrate. The post process operation, which includes a cool down and development process, may be performed for an amount of time between about 15 seconds and about 90 seconds, such as about 30 seconds. After post processing, the substrate may be optionally cleaned and then delivered back to thefactory interface402.

FIG. 6 is a schematic, side view of aprocess chamber100 and apost-process chamber300 arrangement in the process platform ofFIG. 4 according to implementations described herein. More specifically,FIG. 6 illustrates the arrangement of theprocess chamber100 and postprocess chamber300 in a single process station. In the illustrated implementation, thepost process chamber300 is disposed above theprocess chamber100. In other words, thepost process chamber300 is stacked on theprocess chamber100. Thechambers300,100 are also positioned such that openings of thechambers300,100 face thecentral region514 and therobot512 to allow for ingress and egress of substrates.

FIG. 7 is a schematic, side view of aprocess chamber100 and apost-process chamber300 arrangement within the process platform ofFIG. 4 according to implementations described herein. More specifically,FIG. 7 illustrates the arrangement of theprocess chamber100 and postprocess chamber300 in a single process station. In the illustrated implementation, the process chamber is disposed above thepost process chamber300. In other words, theprocess chamber100 is stacked on thepost process chamber300. Similar to the implementation described with regard toFIG. 6, thechambers100,300 are positioned such that openings of thechambers100,300 face thecentral region514 and the robot to allow for ingress and egress of substrates.

By positioning theprocess chambers100 and postprocess chamber300 in a stacked arrangement in each of theprocess stations504,506,508,510, transfer time of substrates between thechambers100,300 by the robot is reduced an improved throughput may be realized. While the above implementations have contemplated that a substrate is processed in one of theprocess stations504,506,508,510, it is contemplated that a substrate may be processed in aprocess chamber100 of a first process station and apost process chamber300 of a second process station different from the first process station.

FIG. 8 illustrates a perspective view of aprocess platform800 according to implementations described herein. One example of theprocess platform800 is the RAIDER® platform, available from Applied Materials, Inc., Santa Clara, Calif. It is contemplated that other suitably configured platforms from other manufacturers may also be utilized in accordance with the implementations described herein.

Theprocess platform800 includes afactory interface802, anintermediate module804, asupport module806, and aprocess module808. Thefactory interface802 is coupled to theintermediate module804, which is coupled to thesupport module806, which is coupled to theprocess module808. Thefactory interface402 includes a plurality of front opening unified pods (FOUPs)820, such as threeFOUPs820. However, it is contemplated that thefactory interface802 may utilize a greater or lesser number ofFOUPs820, depending upon the throughput capability of theprocess module808.

Theprocess module808 includes a plurality ofprocess stations814. Theprocess stations814 may be similar to theprocess stations504,506,508,510 in that eachprocess station814 contains astacked process chamber100 and postprocess chamber300. While the illustrated implementation shows that theprocess chambers100 are disposed on top of the post process chamber30 (SeeFIG. 7), it is contemplated, similar toFIG. 6, that thepost process chamber300 may be disposed on top of theprocess chambers100. Accordingly, it is contemplated that theprocess module808 is implemented with corresponding numbers ofprocess chambers100 andpost process chambers300.

In one example, theprocess module808 includes fiveprocess chambers100 and fivepost process chambers300 disposed on opposite sides of a centrally disposed robot track (not shown) for a total of tenprocess chambers100 and tenpost process chambers300. While fiveprocess stations814 are illustrated, it is contemplated that four (eight total) or six (twelve total)process stations814 may also be advantageously utilized. A plurality ofplumbing modules818 are also provided in theprocess module808. In this implementation, eachprocess station814 has adedicated plumbing module818. A robot (not shown) similar to therobot512 may also be disposed in theprocess module808 and operate to transfer substrates between thechambers100,300 of theprocess stations814 and between theprocess module808 and thesupport module806.

Thesupport module806 includes a plurality of cleaningchambers822. The cleaningchambers822 are configured to rinse and spin dry substrates that have been iFGPEB processed in theprocess stations814 of theprocess module808. It is contemplated that the cleaningchambers822 may be configured to rinse both a device side and a backside of the substrate either sequentially or simultaneously. The cleaningchambers822 may also clean substrates prior to processing in theprocess module808. A plurality ofplumbing modules816 are also provided in thesupport module806. In this implementation, eachclean station812 having acleaning chamber822 has adedicated plumbing module812. Accordingly, theplumbing module816 is configured to support cleaning of substrates with a complement of apparatus configured to enable cleaning operations. In certain implementations, thesupport module806 may also have a robot (not shown) which transfers substrates between theclean stations812 and theprocess module808 or theintermediate module804. Alternatively, process module robot may move between theprocess module808 and thesupport module806 to enable substrate transfer.

Theintermediate module804 includes one ormore buffer stations810 to improve the efficiency of substrate transfer between thefactory interface802 and thesupport module806. Thebuffer station810 may be utilized to compensate for process time disparities between process operations performed in thesupport module806 and theprocess module808. Thebuffer stations810 may also be temperature controlled to modulate substrate temperature prior to processing in thesupport module806 or delivery back to thefactory interface802.

In summation, implementations described herein provide for improved platforms for performing iFGPEB and associated process operations. Utilizing process stations having stacked process and post process chambers enables more efficient substrate transfer and increased throughput. In addition, various plumbing module configurations provide for improved process parameter modulation and maintenance operations. Accordingly, iFGPEB processing operations may be advantageously implemented on the apparatus describe herein.

While the foregoing is directed to implementations of the present disclosure, other and further implementations of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (14)

What is claimed is:

1. A platform apparatus, comprising:

a factory interface;

a plumbing module; and

a process module disposed between the factory interface and the plumbing module, wherein the process module comprises:

a central region having a robot disposed therein; and

a plurality of process stations disposed about the central region, wherein each process station includes a process chamber and a post process chamber in a stacked arrangement, wherein the process chamber comprises:

a chamber body defining a process volume, wherein a major axis of the process volume is oriented vertically and a minor axis of the process volume is oriented horizontally;

a moveable door coupled to the chamber body;

a first electrode coupled to the door, the first electrode configured to support a substrate thereon;

a second electrode coupled to the chamber body, the second electrode at least partially defining the process volume;

a first plurality of fluid ports formed in a sidewall of the chamber body adjacent the process volume; and

a second plurality of fluid ports formed in the sidewall of the chamber body adjacent the process volume opposite the first plurality of fluid ports.

2. The apparatus ofclaim 1, wherein the plumbing module is shared among the plurality of process stations.

3. The apparatus ofclaim 1, wherein ingress/egress openings of the process chamber and the post process chamber are disposed adjacent to and face the central region.

4. The apparatus ofclaim 1, wherein the process chamber is disposed on top of the post process chamber in each of the process stations.

5. The apparatus ofclaim 1, wherein the post process chamber is disposed on top of the process chamber in each of the process stations.

6. The apparatus ofclaim 1, further comprising:

a backing plate disposed between the first electrode and the door.

7. The apparatus ofclaim 1, further comprising:

a process fluid source in fluid communication with the process volume via a first plurality of channels and the first plurality of fluid ports.

8. The apparatus ofclaim 7, further comprising:

a fluid outlet in fluid communication with the process volume via a second plurality of channels and the second plurality of fluid ports.

9. The apparatus ofclaim 1, wherein the first electrode is configured to vacuum chuck a substrate thereon.

10. The apparatus ofclaim 9, wherein a vacuum source is in fluid communication with the first electrode.

11. The apparatus ofclaim 1, wherein the chamber body is formed from polytetrafluoroethylene.

12. The apparatus ofclaim 1, wherein the post process chamber comprises:

a chamber body defining a process volume;

a rotatable pedestal disposed within the process volume;

a fluid delivery arm configured to deliver cleaning fluid to the process volume; and

a shield capable of being raised and lowered by a motor, the shield having an inner diameter greater than a diameter of the rotatable pedestal, wherein the shield is disposed radially outward of the rotatable pedestal.

13. A platform apparatus, comprising:

a factory interface;

a plumbing module; and

a process module disposed between the factory interface and the plumbing module, wherein the process module comprises:

a central region having a robot disposed therein, the robot comprising a plurality of end effectors, the end effectors moveable in three axes; and

a plurality of process stations disposed about the central region, wherein each process station includes a process chamber and a post process chamber in a stacked arrangement, wherein the post process chamber comprises:

a chamber body defining a process volume;

a rotatable pedestal disposed within the process volume;

a fluid delivery arm configured to deliver cleaning fluid to the process volume; and

a shield capable of being raised and lowered by a motor, the shield having an inner diameter greater than a diameter of the rotatable pedestal, wherein the shield is disposed radially outward of the rotatable pedestal.

14. The apparatus ofclaim 13, wherein the process chamber comprises:

a chamber body defining a process volume, wherein a major axis of the process volume is oriented vertically and a minor axis of the process volume is oriented horizontally;

a moveable door coupled to the chamber body;

a first electrode coupled to the door, the first electrode configured to support a substrate thereon;

a second electrode coupled to the chamber body, the second electrode at least partially defining the process volume;

a first plurality of fluid ports formed in a sidewall of the chamber body adjacent the process volume; and

a second plurality of fluid ports formed in the sidewall of the chamber body adjacent the process volume opposite the first plurality of fluid ports.

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