US8582251B2 - Magnetic sensor with non-rectangular geometry - Google Patents

Abstract

Various embodiments generally relate to a magnetic sensor, and more specifically to a magnetoresistive read head sensor. In one such exemplary embodiment, a magnetic sensor comprises a sensor stack and magnetic bias elements positioned adjacent opposite sides of the sensor stack. At least one of the bias elements has a non-rectangular shape, such as substantially trapezoidal or parallelogram shapes having non-perpendicular corners.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)

This is a continuation-in-part application of U.S. patent application Ser. No. 12/547,832, filed Aug. 26, 2009, entitled “TRAPEZOIDAL READER FOR ULTRA HIGH DENSITY MAGNETIC RECORDING.”

SUMMARY

Various embodiments of a magnetic sensor comprises a sensor stack and magnetic bias elements positioned adjacent each side of the sensor stack. At least one bias element has non-rectangular shapes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a prior art reader with rectangular bias magnets and a rectangular reader stack.

FIG. 2A is a schematic diagram showing micromagnetic magnetization patterns in a rectangular free layer of a prior art reader design.

FIG. 2B is a schematic diagram showing a “C” type micromagnetic magnetization pattern.

FIG. 2C is a schematic diagram showing an “S” type micromagnetic magnetization pattern.

FIG. 3 is a schematic diagram showing a “C” type micromagnetization pattern in a trapezoidal free layer and bias magnets of a reader of the invention.

FIG. 4 is a schematic diagram illustrating the response of a MR sensor to the effect of a bit field source versus the distance of the sensor from the field source.

FIG. 5 is a micromagnetic simulation of the response of a prior art MR sensor and an inventive MR sensor to a bit field source versus the distance of the sensors from the field source.

FIG. 6A is a schematic diagram showing an alternative embodiment of a reader of the invention.

FIG. 6B is a schematic diagram showing an alternative embodiment of a reader of the invention.

FIG. 7 is a schematic diagram of an embodiment of the reader of the invention having a non-rectangular parallelogram free layer and non-rectangular parallelogram bias magnets.

FIG. 8 is a schematic diagram of an embodiment of the reader of the invention having a non-rectangular parallelogram free layer and trapezoidal bias magnets.

DETAILED DESCRIPTION

A concern in the performance of magnetoresistive read sensors is fluctuation of magnetization in the read sensor, which directly impacts the magnetic noise of the read sensor. There are three major components of noise that decrease the SN ratio of a reader: Shot noise, Johnson noise, and thermal magnetic noise. All are related to the RA product and become increasingly disruptive to the SN ratio as the reader area decreases in size. Shot noise results from random fluctuations in electron density in an electric current and is proportional to the current I, the band width Δf, and the resistance R. The noise power, P_s, in a resistor due to Shot noise in a resistor is: P_s=f(IΔf RA/A).

Johnson noise results from thermal fluctuations in electron density in a conductor regardless of whether a current is flowing and is proportional to the temperature T, band width Δf, and the resistance R. The noise power P_jin a resistor due to Johnson noise is: P_j=f(TΔf RA/A).

Thermal magnetic noise results from thermally induced magnetic fluctuations in the sensing layers of the reader and is proportional to the temperature T; band width Δf; the reader bias field to the free ferromagnetic layer H_bias; the magnetic moment of the free layer M_sf; and the volume of the free layer, V_free. The noise power, P_mag, in a resistor due to thermal magnetic noise is: P_mag=f(TΔf/H²_biasM_sfV_free).

The RA product of a CPP or TMR sensor is an intrinsic value depending on the material. As the sensor area decreases, the resistance as well as the Shot noise and Johnson noise levels increase. The thermal magnetic noise level varies inversely as the free layer volume of the sensor and also increases accordingly as the sensor area decreases. The resistance increase problem can be overcome with a shunt resistor, but the reader loses signal amplitude. From a reader performance standpoint, it is advantageous to maximize the reader area while maintaining a small reader footprint at the ABS.

RTN noise is an additional noise component to the reader outpoint signal. RTN noise originates from the existence of two remanent magnetization patterns in the sensor that are energetically close enough and have a low energy barrier such that thermal activation can cause oscillation between the two states. Each magnetization pattern (termed “C” state and “S” state) has a different resistance that adds noise to the sensor output signal. Thus there is an additional challenge to stabilize the “C” state or “S” state in addition to maximizing reader area while maintaining a small reader footprint at the ABS.

The reader disclosed herein reduces the above mentioned noise levels for a given recording geometry as well as permitting a higher playback amplitude.

FIG. 1 showsprior art reader10, which includesrectangular reader stack20,rectangular bias elements22 and24, andnonmagnetic spacers26 and28.Reader stack20 includes magnetic and nonmagnetic layers, including at least one free layer.Stack20 has a reader width W_Rand a stripe height H_S. Each ofbias elements22 and24 has a width W_Bias. Widths W_Rand W_Biasare uniform from air bearing surface ABS to the top ofreader10.Spacers26 and28 are nonmagnetic, and may be, for example, metal or ceramic.

FIG. 2A is a schematic diagram showing a top view of micromagnetic magnetization patterns in free layer FL of reader stack20 inprior art sensor10. Magnetization inbias elements22 and24 is indicated byarrows30 and32, respectively. Arrow40 depicts primary magnetization in free layer FL ofsensor stack20 resulting frombias magnets22 and24. The micromagnetic magnetization patterns in free layer FL ofsensor stack20 are preferably parallel to the borders close tobias magnets22 and24 due to demagnetization effects as shown byarrows42,44,46 and48. The magnetization in free layer FL exists in two states that are energetically close and that change from one to another as a result of thermal activation. A “C” state is shown inFIG. 2B comprisingmagnetization vectors40,42 and46. Another “C” state can be represented byvectors44,40 and48. An alternate state designated an “S state”, is shown inFIG. 2C comprisingmagnetization vectors42,40 and48. Another “S” state can be represented byvectors44,40 and46. Changing magnetization resulting from thermally activated fluctuations between the “C” and “S” states results in RTN noise.

The reader of the invention makes use of a non-rectangular shaped sensor stack (and free layer) and non-rectangular shaped magnetic bias elements to stabilize either the “C” shape or the “S” shape. In embodiments shown inFIGS. 3,6A, and6B, the inventive reader disclosed herein stabilizes the “C” state at the expense of the “S” state and minimizes RTN noise. In embodiments shown inFIGS. 7 and 8, the inventive reader stabilizes the “S” state at the expense of the “C” shape and minimizes RTN noise.

FIG. 3shows reader110, which includessensor stack120, permanentmagnet bias elements122 and124, andspacers126 and128.Sensor stack120 andbias elements122 and124 have trapezoidal shapes, that, as shown bymicromagnetization vectors142,140 and146 in free layer FL ofsensor stack120, stabilize the “C” state when under the influence ofbias magnetization vectors130 and132. The dimensions oftrapezoidal sensor stack120 are reader base width W_RB, reader top width W_RT, and stripe height H_S. The dimensions of this aspect of the invention are base width W_RBof about 20 nm, top width W_RTof about 40 nm, and height H_Sof about 30 nm. In another aspect, reader top width W_RTis at least 10 percent wider than reader base width W_RB.

The trapezoidal geometry shown inFIG. 3 offers an increased reader area and resulting RA product at no expense to the reader footprint at the ABS. In this aspect of the present invention, the increased width W_Biasoftrapezoidal bias elements122 and124 at the ABS increases the bias field in that vicinity. In another aspect, by extending the height H_Biasof the bias magnets beyond reader stripe height H_S, the “C” micromagnetic magnetization pattern is enhanced and RTN noise is minimized.

FIG. 4 is a plot showing the response ofMR sensor110 due to the field from a very narrow track (called micro-track) on a recording medium as a function of the distance r ofsensor110 from the bit. A normalized peak magnetic field strength detected by the sensor from the narrow track is plotted on the Y axis and the relative separation r of the sensor from the bit is plotted on the X axis. The signal is greatest when the sensor is directly on the bit at X=0. As the separation betweenMR sensor110 and the bit increases, the signal strength decreases rapidly, that is, it decays. The curve is plotted to indicate a 1/r²relationship between signal strength and separation r. The distance between two positions on the media, at which the signal strength decreases 50% from its maximum, is known as MT50. The distance between two positions on the media, at which the signal decreases to 10% of its maximum, is known in as MT10. The ratio MT10/MT50 is an indication of the ability ofsensor110 to detect magnetic fields from adjacent tracks that distort the sensing signal.

Sincetrapezoidal sensor stack120 is about 10% wider thanrectangular sensor stack20, it is helpful to know how the cross track signal profile changes between the two sensors. Micromagnetic modeling of cross track signal strength from the same micro-track on the two sensor geometries gave the results shown inFIG. 5. The FIG. shows signal strength as a function of distance from the micro-track center on a recording medium forsensor10 andsensor110. The two curves almost superimpose, indicating that increasing the top width (and area) oftrapezoidal sensor120 has not affected sensor cross-track performance. MT10/MT50 of bothsensors10 and110 are about the same.

FIGS. 6A and 6B are schematic illustrations of various exemplary aspects of the present reader.FIG. 6A showsreader110a, which includessensor stack120a, permanentbias magnet elements122aand124aand spacers126aand128a.Sensor stack120aandbias elements122aand124ahave shapes that, as shown bymicromagnetization vectors142a,140a, and146ain free layer FL ofsensor stack120a, stabilize the “C” state when under the influence ofbias magnetization vectors130aand132a. In one embodiment the sensor stack and permanent bias magnets are curved designs. The dimensions ofsensor stack120aare reader base width W_RBa, reader top width W_RTaand stripe height H_Sa. The dimensions of this aspect of the invention are base width W_RBaof about 20 nm, top width W_RTaof about 40 nm, and height H_Saof about 30 nm. In another aspect, reader top width W_RTais at least 10 percent wider than reader base width W_RBa.

The geometry shown inFIG. 6A offers an increased reader area and resulting RA product at no expense to the reader footprint at the ABS. In this embodiment, the increased width, W_Biasaofbias elements122aand124aat the ABS increases the bias field in that vicinity. In another aspect, by extending the height H_Biasaof the bias magnets beyond the reader stripe height H_Sa, a “C” micromagnetization pattern is enhanced and RTN noise is minimized.

FIG. 6B showsreader110b, which includessensor stack120b, permanentmagnet bias elements122band124bandspacers126band128b.Sensor stack120bandbias elements122band124bhave shapes that, as shown bymicromagnetization vectors142b,140band146bin free layer FL ofsensor stack120b, stabilize the “C” state when under the influence ofbias magnetization vectors130band132b. The dimensions ofsensor stack120bare reader base width W_RBb, reader top width W_RTband stripe height H_Sb. The dimensions of this aspect of the invention are base width W_RBbof about 20 nm, top width W_RTbof about 40 nm, and height H_Sbof about 30 nm. In another aspect, reader top width W_RTbis at least 10 percent wider than reader base width W_RBb. The geometry shown inFIG. 6B offers an increased reader area and resulting RA product at no expense to the reader footprint at the ABS. In this embodiment, the increased width W_Biasbofbias elements122band124bat the ABS increases the bias field in that vicinity.

FIGS. 7 and 8 are schematic illustrations of two alternative aspects of the inventive reader that make use of a non-rectangular parallelogram sensor stack (and free layer) to stabilize the “S” shape at the expense of the “C” shape.FIG. 7 showsreader110c, which includessensor stack120c, permanentbias magnet elements122cand124candspacers126cand128c.Sensor stack120candbias elements122cand124chave parallelogram shapes that, as shown bymicromagnetization vectors144c,140c, and146cin free layer FL ofsensor stack120c, stabilize the “S” state when under the influence ofbias magnetization vectors130cand132c. In this embodiment the adjacent sides ofbias element122candsensor stack120care parallel to one another and separated byspacer126c. Similarly, the adjacent sides ofsensor stack120candbias element124care parallel to one another and separated byspacer128c.

As illustrated inFIG. 7, the width ofsensor stack120cis less than the widths ofbias elements122cand124c. In other embodiments, the relative widths may differ.

InFIG. 7 the height ofbias elements122cand122dis greater than the reader stripe height ofsensor stack120c. This helps to enhance a “S” micromagnetization pattern and reduce RTN noise.

FIG. 8 showsreader110d, which includessensor stack120d, permanentmagnet bias elements122dand124dandspacers126dand128d.Sensor stack120dhas a non-rectangular parallelogram shape, whilebias elements122dand124dhave trapezoidal shapes. As shown bymicromagnetization vectors144d,140dand146din free layer FL ofsensor stack120d, these shapes stabilize the “S” state when under the influence ofbias magnetization vectors130dand132d.Bias elements122dand124dhave the same shape, butbias element124dis inverted with respect tobias element122d. In other words, bias elements are arranged in a reciprocal relationship. The base ofbias element122dof the ABS is smaller than the base ofbias element124d. The right side ofbias element122dis parallel to and spaced from the left side ofsensor stack120dbyspacer126d. Similarly, the left side ofbias element124dis parallel to and spaced fromsensor stack120dbyspacer128d.

Both the embodiments with a substantially trapezoidal sensor stack (FIGS. 3,6A, and6B) and the embodiments with a non-rectangular parallelogram sensor stack (FIGS. 7 and 8) help to reduce magnetic noise by stabilizing, either the “C” state or the “S” state. The trapezoidal sensor stack embodiments also help to reduce electronic noise, reduce resistance and resistance distribution. The parallelogram sensor stack embodiments offer advantages of easier fabrication, and will not increase reader width distribution.

While the disclosure has been described with reference to an exemplary embodiment(s), it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the discussed technology. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the embodiments without departing from the essential scope thereof. Therefore, it is intended that the present disclosure not be limited to the particular embodiment(s) disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (16)

The invention claimed is:

1. An apparatus comprising:

a sensor stack having a first side with an overall first width in facing relation to an air bearing surface (ABS), an opposing second side with an overall second width greater than the first width, and an overall stack height extending between the first and second sides that is greater than the first width; and

first and second bias elements respectfully positioned on opposing third and fourth sides of the sensor stack, at least one bias element having a non-rectangular cross-sectional shape in a plane perpendicular to the ABS.

2. The apparatus ofclaim 1 wherein the second width is at least about 10% greater than the first width.

3. The apparatus ofclaim 2 wherein the sensor stack is a current perpendicular to plane (CPP) stack.

4. The apparatus ofclaim 1 further comprising first and second spacer layers respectively separating the first and second bias elements from the sensor stack.

5. The apparatus ofclaim 1 wherein the first and second bias elements are permanent magnets.

6. The apparatus ofclaim 1 wherein the stack height is less than the second width.

7. The apparatus ofclaim 1, in which the first and second bias elements each have a trapezoidal cross-sectional shape.

8. The apparatus ofclaim 1, in which the first bias element exerts a first magnetization in a direction toward the sensor stack along the ABS and the second bias element exerts a second magnetization in a direction away from the sensor stack along the ABS to stabilize a “C” shaped magnetization pattern through the sensor stack.

9. An apparatus comprising a magnetoresistive stack positioned between first and second bias elements on an air bearing surface (ABS), wherein the magnetoresistive stack has a sensor sidewall extending from the ABS at a predetermined angle non-orthogonal to the ABS and at least one bias element of the first and second bias elements has a biasing sidewall extending from the ABS substantially parallel to the sensor sidewall to provide the at least one bias element with a trapezoidal cross-sectional shape in a plane perpendicular to the ABS, the apparatus further comprising first and second spacer layers respectively interposed between the first and second bias elements and the magnetoresistive stack, each of the first and second bias elements respectively having a first side with an overall first width in facing relation to the ABS and an opposing second side with an overall second width less than the first width.

10. The apparatus ofclaim 9 wherein the first and second bias elements are permanent magnets.

11. The apparatus ofclaim 9 wherein a first distance from the ABS to a top of the first and second bias elements is greater than a second distance from the air bearing surface to a top of the magnetoresistive stack.

12. The apparatus ofclaim 9, in which the first bias element exerts a first magnetization in a direction toward the magnetoresistive stack along the ABS and the second bias element exerts a second magnetization in a direction away from the magnetoresistive stack along the ABS to stabilize a “C” shaped magnetization pattern through the magnetoresistive stack.

13. The apparatus ofclaim 9, in which the magnetoresistive stack has a first side with an overall first width in facing relation to the ABS and an opposing second side with an overall second width greater than the first width of the first side of the magnetoresistive stack.

14. An apparatus comprising:

a magnetically responsive sensor having a first surface aligned along an air bearing surface (ABS) with an overall first width, a second surface opposite and parallel to the first surface with an overall second width greater than the first width, and an overall height between the first and second surfaces greater than the first width; and

first and second bias elements arranged on opposing sides of the sensor along the ABS, each of the first and second bias elements having a trapezoidal cross-sectional shape in a plane perpendicular to the ABS.

15. The apparatus ofclaim 14 wherein the height is less than the second width.

16. The apparatus ofclaim 14 wherein a first distance from the ABS to a top of the first and second bias elements is greater than a second distance from the air bearing surface to a top of the sensor.

Images