US7439558B2 - Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement - Google Patents

Abstract

A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also include providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion of the bipolar transistor.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is related to co-pending U.S. patent application Ser. No. 10/327,321 entitled “Very Low Moisture O-Rings and Method For Preparing the Same” filed on Dec. 20, 2002 and assigned to the assignee of the present application, and U.S. patent application Ser. No. 10/801,435 entitled “System Apparatus and Method for Contamination reduction in Semiconductor device Fabrication Equipment Components” filed on Mar. 15, 2004, and assigned to the assignee of the present application.

The present application is also related to co-pending U.S. patent application Ser. No. 11/267,474 entitled Method and System for Providing A Heterojunction Bipolar Transistor Having SiGe Extensions filed on even date herewith and assigned to the assignee of the present application, and U.S. patent application Ser. No. 11/266,797 entitled Bandgap Engineered Mono-Crystalline Silicon Cap Layers for SiGe HBT Performance Enhancement filed on even date herewith and assigned to the assignee of the present application, and U.S. patent application Ser. No. 11/267,553 entitled Bandgap and Recombination Engineered Emitter Layers for SiGe HBT Performance Optimization filed on even date herewith and assigned to the assignee of the present application.

FIELD OF THE INVENTION

The present invention relates to semiconductor processing and semiconductor devices, and more particularly to a method and system for incorporating oxygen in a controlled manner to heterostructure semiconductive devices such as heterojunction bipolar transistors.

BACKGROUND OF THE INVENTION

FIG. 1 depicts a conventional heterojunction bipolar transistor (HBT)10 formed on asubstrate11. The conventional HBT10 includes aconventional collector12, aconventional compound base16, and aconventional emitter20. In someconventional HBTs10, theconventional collector12 is separated from theconventional compound base16 by aconventional spacer layer14. In addition, aconventional capping layer18 may be provided between theconventional compound base16 and theconventional emitter20.

In aconventional HBT10, theconventional compound base16 is typically formed from a compound layer, generally of doped SiGe or SiGeC. The dopant used for theconventional compound base16 is boron. In addition, theconventional spacer layer14 andconventional capping layer18 are typically undoped silicon. Theconventional emitter20 and theconventional collector12 are typically doped so that theconventional HBT10 is an NPN or a PNP transistor.

Although theconventional HBT10 functions, one of ordinary skill in the art will readily recognize that improved performance of theconventional HBT10 is desirable. For example, as device speeds are increased, current gains become greatly elevated and breakdown voltages are greatly reduced, which is often undesirable. The rate of stored charge dissipation in the compound base, base-emitter, and collector regions is desired to be kept elevated. The steep, repeatable boron profiles for the highest Ft and Fmax are also desired to be maintained in order to ensure that the performance of theconventional HBT10 is repeatable. Furthermore, one of ordinary skill in the art will readily recognize that the introduction of certain contaminants can adversely affect the performance of theconventional HBT10. For example, although oxygen may reduce boron out diffusion and reduce the pinched base resistance RSBi, such oxygen diffusion is uncontrolled and thus is typically regarded as an undesirable contaminant in conventional SiGe and SiGeC HBT devices. For example, oxygen contamination is typically a result of leaks, outgassing, and permeation sources in the process reactor. Such, oxygen contaminants have been shown to reduce minority carrier lifetime, which leads to increased base recombination current and reduced current gain. Similarly, oxygen contaminants have been observed to result in increased base resistance of SiGe when boron is incorporated as the dopant for theconventional base16.

Accordingly, what is needed is a method and system for improving performance of theconventional HBT10. The present invention addresses such a need.

BRIEF SUMMARY OF THE INVENTION

The present invention provides a method and system for providing a bipolar transistor. The method and system comprise providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also comprise providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion of the bipolar transistor.

According to the method and system disclosed herein, the present invention allows oxygen to be provided in a controlled manner that allows for improved performance of the bipolar transistor.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a diagram of a conventional heterojunction bipolar transistor device.

FIG. 2 is a flow chart depicting one embodiment of a method in accordance with the present invention for providing a bipolar transistor device having improved performance.

FIG. 3 is a flow chart depicting another embodiment of a method in accordance with the present invention for providing a heterojunction bipolar transistor device having improved performance.

FIG. 4 is a block diagram depicting one embodiment of a bipolar transistor device in accordance with the present invention having improved performance.

FIG. 5 is a block diagram depicting another embodiment of a bipolar transistor device in accordance with the present invention having improved performance.

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to semiconductor devices. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.

The present invention provides a method and system for providing a bipolar transistor. The method and system comprise providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also comprise providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion of the bipolar transistor.

The improvement is made possible by providing a method for controlled oxygen incorporation. This is also made possible by implementing oxygen reduction methods described in co-pending patent application Ser. No. 10/327,321 entitled “Very Low Moisture O-Rings and Method For Preparing the Same” filed on Dec. 20, 2002 and assigned to the assignee of the present application, and U.S. patent application Ser. No. 10/801,435 entitled “System Apparatus and Method for Contamination reduction in Semiconductor device Fabrication Equipment Components” filed on Mar. 15, 2004, and assigned to the assignee of the present application. Applicant hereby incorporates by reference the above-identified co-pending patent applications.

The present invention will be described in terms of a particular HBT device. However, one of ordinary skill in the art will readily recognize that the method and system may be applicable to other device(s) having other, additional, and/or different components and/or positions not inconsistent with the present invention. For example, the method and system in accordance with the present invention may be applicable to compound semiconductor devices including but not limited to high electron mobility transistors (HEMTs), FETs, and laser diodes. Similarly, the method and system in accordance with the present invention may be applicable to devices utilizing materials such as GaAs, InP, and AlGaAs. The present invention is also described in the context of particular methods. One of ordinary skill in the art will, however, recognize that the method could have other and/or additional steps. Moreover, although the methods are described in the context of providing a single HBT device, one of ordinary skill in the art will readily recognize that multiple device may be provided in parallel.

FIG. 2 is a flow chart depicting one embodiment of amethod100 in accordance with the present invention for providing a bipolar transistor device having improved performance. For simplicity, certain steps have been omitted or merged. A collector is provided, viastep102. In one embodiment,step102 includes performing an implant of a desired dopant type. The collector formed instep102 optionally includes a controlled amount of oxygen. The amount of oxygen that may be provided in the collector is predetermined, prior to step102 being carried out. The base is formed, viastep104. Step104 preferably includes forming a compound base, for instance the growth of SiGe or SiGeC by LPCVD. For a p-type base region, boron is typically incorporated in-situ with diborane as the source gas. The base formed instep104 optionally includes a predetermined, controlled amount of oxygen. The emitter is provided, viastep106. Step106 includes performing an implant or an in-situ doping during LPCVD of a desired amount of dopant. The emitter formed instep106 optionally includes a predetermined, controlled amount of oxygen. It is ensured that at least one of the base region, the emitter region, the collector region, and another predetermined portion of the bipolar transistor, such as a spacer or capping layer, is provided with a predetermined amount of oxygen in a controlled manner, viastep108.

Thus, a predetermined amount of oxygen is provided to the base region, emitter region, collector region and/or another region of the HBT device in a controlled manner insteps102,104,106, and/or108. For example, oxygen may be provided in the entire SiGe (or SiGeC) layer. Alternatively, the oxygen may be provided at specific portions of the device. Providing the oxygen may include implanting oxygen in the desired portion(s) of the device, providing the oxygen through chemical vapor deposition (CVD) or some combination of thereof. In another embodiment, the oxygen is updiffused into the desired portion of the device. For example, in one embodiment, the predetermined amount of oxygen provided to the SiGe (or SiGeC) layer forming the base region. In order to do so, the collector is provided with oxygen using an implant or CVD as described above. A thermal treatment, for example instep108, is provided to allow the oxygen to updiffuse from the collector region into the strained SiGe or SiGeC layer. In such an embodiment, the amount of oxygen that updiffuses is directly proportional to the total doses of boron and carbon present. Also in this embodiment, such an amount of oxygen that updiffuses is also inversely proportional to the total doses of boron and carbon. The updiffusion of oxygen is self limiting and, therefore, accurate and repeatable. Consequently, the amount of oxygen can be considered to be predetermined in that determined from the factors described above. Moreover, in such an embodiment, the position of the oxygen after updiffusion is within the SiGe or SiGeC layer and self-aligned to the regions of the SiGe or SiGeC layer and to previous locations of C and B in various Ge profiles. Moreover, the self-aligned nature of the oxygen updiffusion allows for minority carrier lifetime engineering of specific regions of interest within the SiGe or SiGeC layer of the base region. In alternate embodiments, individual regions may be implanted with oxygen or provided with oxygen via CVD. In other embodiments, a combination of implanting and/or CVD of individual regions and oxygen updiffusion may be used.

Thus, using themethod100, a controlled amount of oxygen may be provided to particular regions of the HBT device. Introduction of the predetermined amounts of oxygen may increase carrier recombination rates, thereby increasing base recombination current and reduced current gain. As a result, the breakdown voltage may be increased. In addition, charge dissipation may increase for improved Ft/Fmax values. The introduction of the controlled amount of oxygen also reduces boron out diffusion. Consequently, boron profiles may be steeper, allowing for a narrower base region and improved Ft/Fmax values. Device performance may, therefore, be improved.

FIG. 3 is a flow chart depicting another embodiment of amethod120 in accordance with the present invention for providing a heterojunction bipolar transistor device having improved performance. For simplicity, certain steps have been omitted or merged. The silicon spacer layer is formed on an underlying substrate, viastep122. The SiGe or SiGeC layer is formed on the spacer layer, viastep124. Step124 thus includes incorporating Ge and, optionally, C, generally by CVD. The silicon cap layer is also provided on the SiGe or SiGeC layer, viastep126. Step126 could also include providing a spacer layer on the SiGe or SiGeC layer, but below the capping layer. The collector is provided, viastep128. In one embodiment, the collector resides below the silicon spacer layer. In one embodiment,step128 includes providing a phosphorus dopant. In another embodiment, another dopant may be used. The compound base is provided, viastep130. Step130 includes implanting the SiGe or SiGeC layer with the desired dopant, such as B. The emitter is provided, viastep132. In one embodiment, the emitter resides on the silicon cap layer. Step132 includes providing a dopant of the desired type. For example, in one embodiment,step132 includes providing a phosphorus dopant. It is ensured that the desired portion(s) of the HBT device are provided with a predetermined amount of oxygen in a controlled manner, viastep134. In one embodiment,step134 includes performing an oxygen implant or providing the oxygen in-situ during CVD. The oxygen source gas for an LPCVD is generally heliox. However, pure oxygen may also be used for CVD or implant. In one embodiment, the oxygen may be provided in the appropriate position for updiffusion. The HBT device may be thermally treated, viastep136. Thus, step136 may allow updiffusion to take place to ensure that the predetermined amount of oxygen reaches the desired portion of the HBT device.

Thus, using themethod120, a controlled amount of oxygen may be provided to desired regions of the HBT device. Consequently, themethod120 can be used to provide HBT devices having substantially the same benefits as themethod100.

FIG. 4 is a block diagram depicting one embodiment of anHBT device200 in accordance with the present invention having improved performance. TheHBT device200 is formed on asubstrate201 and includes acollector region210, acompound base region220, and anemitter region230. One or more of thecollector region210, thecompound base region220, and theemitter region230 may include a predetermined amount of oxygen. Thus, theHBT device200 may be provided using themethod100 or120. Thebase region220 is formed from a SiGe or SiGeC layer. Any combination of thecollector region210, thecompound base region220, and theemitter region230 may have a predetermined amount of oxygen provided in a controlled manner. In addition, the amount of oxygen in each of thecollector region210, thecompound base region220, and theemitter region230 may differ.

Becauseregions210,220, and/or230 may include predetermined amounts of oxygen, the carrier recombination rates may be increased for theHBT device200. Thus, the base recombination current may be increased and the current gain reduced. As a result, the breakdown voltage may be increased for theHBT device200. In addition, charge dissipation may increase, allowing for improved Ft/Fmax values of theHBT device200. The introduction of the controlled amount of oxygen may also reduce boron out diffusion from thecompound base region220. Consequently, boron profiles may be steeper, allowing for a narrower base region and improved Ft/Fmax values for theHBT device200. Performance of theHBT device200 may, therefore, be improved.

FIG. 5 is a block diagram depicting another embodiment of anHBT device200′ in accordance with the present invention having improved performance. Portions of theHBT device200′ are analogous to theHBT device200 and are, therefore, labeled similarly. TheHBT device200′ thus is formed on asubstrate201′ and includes acollector region210′, abase region220′ formed from SiGe or SiGeC, and anemitter region230′. TheHBT device200′ also includes afirst spacer layer240 between thecollector region210′ and thecompound base region220′, asecond spacer layer250 and acapping layer260 between thecompound base region220′ and theemitter region230′. In theHBT device200′, any combination of thecollector region210′, thefirst spacer layer240, thecompound base region220′, thesecond spacer layer250, thecapping layer260, and theemitter region230′ may include a predetermined amount of oxygen provided in a controlled manner.

Becauseregions210′,220′,230′,240,250, and/or260 may include predetermined amounts of oxygen, the carrier recombination rates may be increased for theHBT device200′. Thus, the base recombination current may be increased and the current gain reduced. As a result, the breakdown voltage may be increased for theHBT device200′. In addition, charge dissipation may increase, allowing for improved Ft/Fmax values of theHBT device200′. The introduction of the controlled amount of oxygen may also reduce boron out diffusion from thecompound base region220′. Consequently, boron profiles may be steeper, allowing for a narrower compound base region and improved Ft/Fmax values for theHBT device200′. Performance of theHBT device200′ may, therefore, be improved.

A method and system for providing a bipolar transistor has been disclosed. The present invention has been described in accordance with the embodiments shown, and one of ordinary skill in the art will readily recognize that there could be variations to the embodiments, and any variations would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.

Claims (18)

1. A heterostructure semiconductor device comprising:

a compound semiconductive layer including at least two materials selected from silicon, germanium, carbon, gallium, indium, aluminum, arsenic, and phosphorus, a first region having first doping type formed using the compound semiconductive layer;

at least one additional semiconductive region having a second doping type opposite of the first doping type; and

at least one of the first semiconductive region and the additional semiconductive region including at least one predetermined amount of oxygen.

2. The heterostructure semiconductor device ofclaim 1 wherein the heterostructure semiconductor device includes at least one of a heterojunction bipolar transistor, a high electron mobility transistor, a field-effect transistor, and a laser diode.

3. A bipolar transistor comprising:

a compound semiconductive base region;

an emitter semiconductive region coupled with the compound semiconductive base region; and

a collector semiconductive region coupled with the compound semiconductive base region;

at least one of the compound base semiconductive region, the emitter semiconductive region, the collector semiconductive region, and a predetermined portion of the bipolar transistor including at least one predetermined amount of oxygen.

4. The bipolar transistor ofclaim 3 further comprising:

at least one spacer residing between the compound base region and the collector region, the predetermined portion including the at least one spacer.

5. The bipolar transistor ofclaim 3 further comprising:

at least one spacer residing between the compound base and the emitter, the predetermined portion including the at least one spacer.

6. The bipolar transistor ofclaim 3 further comprising:

at least one silicon seed layer, the predetermined portion including the at least one silicon seed layer.

7. The bipolar transistor ofclaim 6 wherein the at least one silicon seed layer is undoped.

8. The bipolar transistor ofclaim 6 wherein the collector region includes a first predetermined amount of oxygen and the at least one silicon seed layer includes a second predetermined amount of oxygen.

9. The bipolar transistor ofclaim 3 further comprising:

at least one capping layer between the emitter region and the compound base region, the predetermined portion including the at least one capping layer.

10. The bipolar transistor ofclaim 9 wherein the emitter region includes a first predetermined amount of oxygen and the at least one capping layer includes a second predetermined amount of oxygen.

11. The bipolar transistor ofclaim 3 wherein the predetermined amount is provided in-situ oxygen incorporation during CVD growth.

12. The bipolar transistor ofclaim 3 wherein the compound base region includes SiGe or SiGeC.

13. A bipolar transistor comprising:

a silicon seed layer;

a compound base semiconductive region including at least one of SiGe and SiGeC and formed on the silicon seed layer;

a first spacer;

an emitter semiconductive region coupled with the compound base semiconductive region and formed on the silicon seed layer, the first spacer between the compound base semiconductive region and the emitter semiconductive region;

a collector semiconductive region coupled with the compound base semiconductive region and formed on the silicon seed layer;

a second spacer between the compound base semiconductive region and the collector semiconductive region; and

a capping layer residing between the first spacer and the emitter semiconductive region;

at least one of the compound base semiconductive region, the emitter semiconductive region, the collector semiconductive region, the silicon seed layer, the first spacer, the second spacer, and the capping layer including at least one predetermined amount of oxygen.

14. A semiconductor device comprising:

at least one bipolar transistor, each of the at least one bipolar transistor including a compound base semiconductive region, an emitter semiconductive region coupled with the compound base semiconductive region, and a collector semiconductive region coupled with the compound base semiconductive region;

wherein at least one of the compound base semiconductive region, the emitter semiconductive region, the collector semiconductive region, and a predetermined portion of the bipolar transistor includes at least one predetermined amount of oxygen.

15. A bipolar transistor comprising:

a compound base region;

an emitter region coupled with the compound base region;

a collector region coupled with the compound base region;

at least one of the compound base region, the emitter region, the collector region, and a predetermined portion of the bipolar transistor including at least one predetermined amount of oxygen; and

at least one silicon seed layer, the predetermined portion including the at least one silicon seed layer.

16. A bipolar transistor comprising:

a compound base region;

an emitter region coupled with the compound base region;

a collector region coupled with the compound base region;

at least one of the compound base region, the emitter region, the collector region, and a predetermined portion of the bipolar transistor including at least one predetermined amount of oxygen; and

at least one undoped silicon seed layer, the predetermined portion including the at least one undoped silicon seed layer.

17. A bipolar transistor comprising:

a compound base region;

an emitter region coupled with the compound base region;

a collector region coupled with the compound base region;

at least one of the compound base region, the emitter region, the collector region, and a predetermined portion of the bipolar transistor including at least one predetermined amount of oxygen and wherein the collector region includes a first predetermined amount of oxygen and the at least one silicon seed layer includes a second predetermined amount of oxygen.

18. A bipolar transistor comprising:

a compound base region;

an emitter region coupled with the compound base region;

a collector region coupled with the compound base region;

at least one of the compound base region, the emitter region, the collector region, and a predetermined portion of the bipolar transistor including at least one predetermined amount of oxygen; and

at least one capping layer between the emitter region and the compound base region, the predetermined portion including the at least one capping layer and wherein the emitter region includes a first predetermined amount of oxygen and the at least one capping layer includes a second predetermined amount of oxygen.

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