| US5856033A (en)* | 1993-07-30 | 1999-01-05 | Martin Marietta Energy Systems, Inc. | Process for growing a film epitaxially upon an oxide surface and structures formed with the process |
| US6652924B2 (en) | 1996-08-16 | 2003-11-25 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| US20080280039A1 (en)* | 1996-08-16 | 2008-11-13 | Sam America, Inc. | Sequential chemical vapor deposition |
| US20020031618A1 (en)* | 1996-08-16 | 2002-03-14 | Arthur Sherman | Sequential chemical vapor deposition |
| US5916365A (en)* | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
| US7682657B2 (en) | 1996-08-16 | 2010-03-23 | Asm International N.V. | Sequential chemical vapor deposition |
| US6616986B2 (en) | 1996-08-16 | 2003-09-09 | Asm America Inc. | Sequential chemical vapor deposition |
| US20040076751A1 (en)* | 1996-08-16 | 2004-04-22 | Arthur Sherman | Sequential chemical vapor deposition |
| US7410671B2 (en) | 1996-08-16 | 2008-08-12 | Asm International N.V. | Sequential chemical vapor deposition |
| US8323737B2 (en) | 1996-08-16 | 2012-12-04 | Asm International N.V. | Sequential chemical vapor deposition |
| US20040083949A1 (en)* | 1996-08-16 | 2004-05-06 | Arthur Sherman | Sequential chemical vapor deposition |
| US7332032B2 (en) | 1999-06-16 | 2008-02-19 | Micron Technology, Inc. | Precursor mixtures for use in preparing layers on substrates |
| US6203613B1 (en) | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7674715B2 (en) | 2000-06-28 | 2010-03-09 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7465666B2 (en) | 2000-06-28 | 2008-12-16 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7745333B2 (en) | 2000-06-28 | 2010-06-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7115494B2 (en) | 2000-06-28 | 2006-10-03 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7235486B2 (en) | 2000-06-28 | 2007-06-26 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7846840B2 (en) | 2000-06-28 | 2010-12-07 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US20040255861A1 (en)* | 2000-12-29 | 2004-12-23 | Quanyuan Shang | Chamber for uniform substrate heating |
| US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
| US20020127336A1 (en)* | 2001-01-16 | 2002-09-12 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
| US7094680B2 (en) | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7695563B2 (en) | 2001-07-13 | 2010-04-13 | Applied Materials, Inc. | Pulsed deposition process for tungsten nucleation |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7905959B2 (en) | 2001-07-16 | 2011-03-15 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7494908B2 (en) | 2001-09-26 | 2009-02-24 | Applied Materials, Inc. | Apparatus for integration of barrier layer and seed layer |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7780788B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| US8668776B2 (en) | 2001-10-26 | 2014-03-11 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7779784B2 (en) | 2002-01-26 | 2010-08-24 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7745329B2 (en) | 2002-02-26 | 2010-06-29 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
| US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
| US6869838B2 (en) | 2002-04-09 | 2005-03-22 | Applied Materials, Inc. | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications |
| US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
| US7867914B2 (en) | 2002-04-16 | 2011-01-11 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US8617312B2 (en) | 2002-08-28 | 2013-12-31 | Micron Technology, Inc. | Systems and methods for forming layers that contain niobium and/or tantalum |
| US7368402B2 (en) | 2002-08-28 | 2008-05-06 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US7858815B2 (en) | 2002-08-28 | 2010-12-28 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US20070006798A1 (en)* | 2002-08-28 | 2007-01-11 | Micron Technology, Inc. | Systems and methods for forming strontium-and/or barium-containing layers |
| US20060292788A1 (en)* | 2002-08-28 | 2006-12-28 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US20070166999A1 (en)* | 2002-08-28 | 2007-07-19 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US20060048711A1 (en)* | 2002-08-28 | 2006-03-09 | Micron Technology, Inc. | Systems and methods of forming tantalum silicide layers |
| US7943501B2 (en) | 2002-08-28 | 2011-05-17 | Micron Technology, Inc. | Systems and methods of forming tantalum silicide layers |
| US7300870B2 (en) | 2002-08-28 | 2007-11-27 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using organic amines |
| US20050032360A1 (en)* | 2002-08-28 | 2005-02-10 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US6730164B2 (en) | 2002-08-28 | 2004-05-04 | Micron Technology, Inc. | Systems and methods for forming strontium- and/or barium-containing layers |
| US20080064210A1 (en)* | 2002-08-28 | 2008-03-13 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using organic amines |
| US20040043151A1 (en)* | 2002-08-28 | 2004-03-04 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
| US7122464B2 (en) | 2002-08-28 | 2006-10-17 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US20080102629A1 (en)* | 2002-08-28 | 2008-05-01 | Micron Technology, Inc. | Systems and methods of forming tantalum silicide layers |
| US7196007B2 (en) | 2002-08-28 | 2007-03-27 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US20050028733A1 (en)* | 2002-08-28 | 2005-02-10 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US20050019978A1 (en)* | 2002-08-28 | 2005-01-27 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US6784049B2 (en) | 2002-08-28 | 2004-08-31 | Micron Technology, Inc. | Method for forming refractory metal oxide layers with tetramethyldisiloxane |
| US7115166B2 (en) | 2002-08-28 | 2006-10-03 | Micron Technology, Inc. | Systems and methods for forming strontium- and/or barium-containing layers |
| US20080210157A9 (en)* | 2002-08-28 | 2008-09-04 | Micron Technology, Inc. | Systems and methods for forming strontium-and/or barium-containing layers |
| US6794284B2 (en) | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
| US6967159B2 (en) | 2002-08-28 | 2005-11-22 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using organic amines |
| US20040197946A1 (en)* | 2002-08-28 | 2004-10-07 | Micron Technology, Inc. | Systems and methods for forming strontium-and/or barium-containing layers |
| US20040040494A1 (en)* | 2002-08-28 | 2004-03-04 | Micron Technology, Inc. | Systems and methods for forming strontium- and/or barium-containing layers |
| US7560393B2 (en) | 2002-08-28 | 2009-07-14 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using disilazanes |
| US7544615B2 (en) | 2002-08-28 | 2009-06-09 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using organic amines |
| US20050287804A1 (en)* | 2002-08-28 | 2005-12-29 | Micron Technology, Inc. | Systems and methods of forming refractory metal nitride layers using organic amines |
| US6995081B2 (en) | 2002-08-28 | 2006-02-07 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
| US7030042B2 (en) | 2002-08-28 | 2006-04-18 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US20050009266A1 (en)* | 2002-08-28 | 2005-01-13 | Micron Technology, Inc. | Systems and methods for forming refractory metal oxide layers |
| US20040043636A1 (en)* | 2002-08-28 | 2004-03-04 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US8114219B2 (en) | 2003-04-29 | 2012-02-14 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US20070155190A1 (en)* | 2003-04-29 | 2007-07-05 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US7332442B2 (en) | 2003-04-29 | 2008-02-19 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US7678708B2 (en) | 2003-04-29 | 2010-03-16 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US20040219746A1 (en)* | 2003-04-29 | 2004-11-04 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US7115528B2 (en) | 2003-04-29 | 2006-10-03 | Micron Technology, Inc. | Systems and method for forming silicon oxide layers |
| US20060252244A1 (en)* | 2003-04-29 | 2006-11-09 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US8394725B2 (en) | 2003-04-29 | 2013-03-12 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US20090149033A1 (en)* | 2003-04-29 | 2009-06-11 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US20100147218A1 (en)* | 2003-04-29 | 2010-06-17 | Micron Technology, Inc. | Systems and methods for forming metal oxide layers |
| US7482284B2 (en) | 2003-04-29 | 2009-01-27 | Micron Technology, Inc. | Deposition methods for forming silicon oxide layers |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
| US20070134816A1 (en)* | 2004-06-29 | 2007-06-14 | Micron Technology, Inc. | Atomic layer deposition using electron bombardment |
| US7628855B2 (en) | 2004-06-29 | 2009-12-08 | Micron Technology, Inc. | Atomic layer deposition using electron bombardment |
| US7189287B2 (en) | 2004-06-29 | 2007-03-13 | Micron Technology, Inc. | Atomic layer deposition using electron bombardment |
| US20050284360A1 (en)* | 2004-06-29 | 2005-12-29 | Micron Technology, Inc. | Atomic layer deposition using electron bombardment |
| US20060270223A1 (en)* | 2004-08-13 | 2006-11-30 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
| US20060035462A1 (en)* | 2004-08-13 | 2006-02-16 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
| US7300873B2 (en) | 2004-08-13 | 2007-11-27 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
| US7462559B2 (en) | 2004-08-13 | 2008-12-09 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
| US20080064209A1 (en)* | 2004-08-13 | 2008-03-13 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
| US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US20090275199A1 (en)* | 2005-06-28 | 2009-11-05 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US20080280455A1 (en)* | 2005-06-28 | 2008-11-13 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US7416994B2 (en) | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US7709399B2 (en) | 2005-06-28 | 2010-05-04 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal β-diketiminate compounds |
| US20080214001A9 (en)* | 2005-06-28 | 2008-09-04 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US20100186668A1 (en)* | 2005-06-28 | 2010-07-29 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US7439338B2 (en) | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US8357784B2 (en) | 2005-06-28 | 2013-01-22 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US20090075488A1 (en)* | 2005-06-28 | 2009-03-19 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US20060292873A1 (en)* | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US7858523B2 (en) | 2005-06-28 | 2010-12-28 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US8188464B2 (en) | 2005-06-28 | 2012-05-29 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US8017184B2 (en) | 2005-06-28 | 2011-09-13 | Micron Technology, Inc. | β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US9234273B2 (en) | 2005-06-28 | 2016-01-12 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US20060292841A1 (en)* | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US20110071316A1 (en)* | 2005-06-28 | 2011-03-24 | Micron Technology, Inc. | Unsymmetrical Ligand Sources, Reduced Symmetry Metal-Containing Compounds, and Systems and Methods Including Same |
| US7572731B2 (en) | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US20080299782A9 (en)* | 2005-09-01 | 2008-12-04 | Nirmal Ramaswamy | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US7943507B2 (en) | 2005-09-01 | 2011-05-17 | Round Rock Research, Llc | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US20070049055A1 (en)* | 2005-09-01 | 2007-03-01 | Nirmal Ramaswamy | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US7521356B2 (en) | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US20090215262A1 (en)* | 2005-09-01 | 2009-08-27 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US7892964B2 (en) | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| US20110021001A1 (en)* | 2007-02-14 | 2011-01-27 | Micron Technology, Inc. | Vapor Deposition Methods for Forming a Metal-Containing Layer on a Substrate |
| US20080194088A1 (en)* | 2007-02-14 | 2008-08-14 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| US8557697B2 (en) | 2007-02-14 | 2013-10-15 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| US20080272421A1 (en)* | 2007-05-02 | 2008-11-06 | Micron Technology, Inc. | Methods, constructions, and devices including tantalum oxide layers |
| US20090032958A1 (en)* | 2007-08-03 | 2009-02-05 | Micron Technology, Inc. | Intermetallic conductors |
| US8759228B2 (en) | 2007-10-09 | 2014-06-24 | Micron Technology, Inc. | Chemistry and compositions for manufacturing integrated circuits |
| US20090093125A1 (en)* | 2007-10-09 | 2009-04-09 | Micron Technology, Inc. | Chemistry and compositions for manufacturing integrated circuits |
| US8673390B2 (en) | 2007-12-18 | 2014-03-18 | Micron Technology, Inc. | Methods of making crystalline tantalum pentoxide |
| US20090155486A1 (en)* | 2007-12-18 | 2009-06-18 | Micron Technology, Inc. | Methods of making crystalline tantalum pentoxide |
| US8012532B2 (en) | 2007-12-18 | 2011-09-06 | Micron Technology, Inc. | Methods of making crystalline tantalum pentoxide |
| US8282988B2 (en) | 2007-12-18 | 2012-10-09 | Micron Technology, Inc | Methods of making crystalline tantalum pentoxide |
| US8208241B2 (en) | 2008-06-04 | 2012-06-26 | Micron Technology, Inc. | Crystallographically orientated tantalum pentoxide and methods of making same |
| US20090303657A1 (en)* | 2008-06-04 | 2009-12-10 | Micron Technology, Inc. | Crystallographically orientated tantalum pentoxide and methods of making same |
| US20120140226A1 (en)* | 2009-08-12 | 2012-06-07 | Remigiusz Pastusiak | Method and device for determining chemical and/or physical properties of working substances in a machine system |
| US9128025B2 (en)* | 2009-08-12 | 2015-09-08 | Siemens Aktiengesellschaft | Method and device for determining chemical and/or physical properties of working substances in a machine system |
| EP3629064A1 (en)* | 2018-09-25 | 2020-04-01 | Koninklijke Philips N.V. | Scintillator array with high detective quantum efficiency |
| WO2020064373A1 (en)* | 2018-09-25 | 2020-04-02 | Koninklijke Philips N.V. | Scintillator array with high detective quantum efficiency |
| US11686864B2 (en) | 2018-09-25 | 2023-06-27 | Koninklijke Philips N.V. | Scintillator array with high detective quantum efficiency |