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US5177663A - Multilayer discoidal capacitors - Google Patents

Multilayer discoidal capacitors
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US5177663A
US5177663AUS07/695,631US69563191AUS5177663AUS 5177663 AUS5177663 AUS 5177663AUS 69563191 AUS69563191 AUS 69563191AUS 5177663 AUS5177663 AUS 5177663A
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planar electrodes
electrodes
multilayer
cylindrical electrode
dielectric body
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US07/695,631
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Howard G. Ingleson
Pamela H. Pugh
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Oxley Developments Co Ltd
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Oxley Developments Co Ltd
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Assigned to OXLEY DEVELOPMENTS COMPANY LIMITEDreassignmentOXLEY DEVELOPMENTS COMPANY LIMITEDASSIGNMENT OF ASSIGNORS INTEREST.Assignors: INGLESON, HOWARD G., PUGH, PAMELA H.
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Abstract

A multilayer discoidal capacitor having a plurality of laterally spaced, planar electrodes disposed within a dielectric body and configured such that the capacitance characteristic of the capacitor is determined at least in part by the concentrated charge distribution in the "stray" electric fields arising between the edges of the electrodes and at least one cylindrical electrode extending perpendicularly to the planar electrodes.

Description

DESCRIPTION
The present invention relates to multilayer discoidal capacitors.
Multilayer discoidal capacitors are used, for example, to suppress electrical interference on signal and power lines. Each capacitor is constructed from appropriate ceramic materials depending on requirements and has a typical construction as shown in FIGS. 4 and 5 of the accompanying drawings, wherein a plurality of first parallel,annular electrodes 53 are embedded within a cylindrical mass ofdielectric material 55 and are connected at their inner edges to an innercylindrical metallization 51, and a plurality of second,annular electrodes 54 are embedded within thedielectric material 55 and are connected at their outer edges to an outercylindrical metallization 52.
The total capacitance is the sum of the parallel plate capacitors between each electrode pair. ##EQU1## where εo=permittivity of free space
εr=dielectric constant
A=area of overlap
d=separation of electrodes.
The disc construction is similar to that of multilayer chip capacitors. Their unique application requires the discoidal configuration, firstly, because the central electrode leads to a low inductance path and secondly, for ease of mechanical handling.
The requirement for capacitors having a smaller outside diameter offers substantial advantages and is in frequent demand by users. This demand leads to changes in the design of the disc in order to accommodate the same capacitance in a lower volume.
The three variable parameters in equation (1) are εr, A and d. εr is limited by temperature requirements on the temperature coefficient of capacitance, and unless this is changed, it can be regarded as fixed. The separation d is limited by breakdown voltage requirements. The area A can only be increased by increasing the number of electrodes, hence making the height of the disc larger, or by reducing the distance from the edge of the electrode to the opposing termination, which increases production alignment problems.
It is an object of the present invention to provide improvements in multilayer discoidal capacitors.
In accordance with one aspect of the present invention, there is provided a multilayer discoidal capacitor having a plurality of laterally spaced planar electrodes disposed within a dielectric body and configured such that the capacitance characteristic of the capacitor is determined at least in part by the concentrated charge distribution in the "stray" electric fields arising at edges of the electrodes, and wherein the capacitance characteristic of the capacitor is determined at least in part by the "stray" electric fields arising between the edges of the electrodes and at least one cylindrical electrode extending perpendicularly to the planar electrodes.
Preferably said at least one cylindrical electrode extends through the dielectrode body, the planar electrodes having at least one corresponding region of discontinuity which surrounds said cylindrical electrode so that there exists between each planar electrode and the cylindrical electrode an annular separation.
Advantageously, the or each said cylindrical electrode is formed by metallising the wall of a cylindrical hole in the dielectrode body.
In other embodiments, the cylindrical electrode which extends perpendicularly to the planar electrodes can be located around a peripheral edge of the dielectric body, the outer peripheries of the planar electrodes terminating within the dielectric body so as to be separated from said cylindrical electrode.
By way of example only, specific embodiments of the present invention will now be described with reference to the accompanying drawings, in which:
FIG. 1a is a longitudinal cross-section of one embodiment of a multilayer discoidal capacitor in accordance with the present invention;
FIG. 1b is a partial longitudinal cross-section of a modified version of a multi-layer discoidal capacitor of FIG. 1a;
FIG. 2 is a longitudinal cross-section of a further embodiment of a multi-layer discoidal capacitor in accordance with the invention;
FIG. 3 is a longitudinal cross-section of a still further embodiment of a multi-layer discoidal capacitor in accordance with the invention;
FIG. 4 is a transverse cross-section of a discoidal capacitor of the prior art;
FIG. 5 is a longitudinal cross-section through the line y--y of the capacitor in FIG. 4 of the prior art, and
FIG. 6 shows schematically the production of a "stray" electric field of the type used in the present invention.
A multilayerdiscoidal capacitor 50 of the prior art is illustrated in FIGS. 4 and 5 and comprises a body ofdielectric material 55 of annular cross-section having coaxial inner and outermetallised terminations 51 and 52, respectively, and electrodes in the form of annular discs, theinner electrodes 53 being in electrical contact with theinner termination 51 and theouter electrodes 54 being in contact with theouter termination 52.
If the outer and inner terminations are oppositely polarised, then opposing charges will develop on the attached respective outer and inner electrodes. Charge is then distributed over the area of overlap, which is maximised between each pair of inner and outer electrodes. This is illustrated diagrammatically in FIG. 6.
In order to address the challenge of higher capacitance per unit volume and to give tight control over the spread of capacitance values, use is made in the present invention of "stray" electric fields. An example of a "stray" electric field of the type used by the present invention is illustrated in FIG. 6. As explained hereinafter, the invention makes use of the "stray" electric field from the edge of conductors rather than trying to achieve a parallel plate capacitor.
Referring first to FIG. 1, the illustrated embodiment in accordance with the present invention comprises adiscoidal body 20 of dielectric (ceramic) material having a plurality ofmetallic disc electrodes 22 disposed therewithin in spaced parallel planes. Theceramic body 20 contains a plurality of through-holes 24 which are coated metallically so as, in effect, to form conductivetubular electrodes 25 which extend perpendicularly to the planes of the metal layers forming thedisc electrodes 22. Thedisc electrodes 22 do not extend up to thosetubular electrodes 25 but are separated from them by smallannular gaps 26. Electrical contact is made to thedisc electrodes 22 by metallising theperipheral surface 28 of the ceramic body as shown at 30. Alternatively, as shown in FIG. 1a, electrical connection with thedisc electrodes 22 can be made by one or more conductive vias orpins 32 which are arranged to extend through theceramic body 20.
Such a capacitor is particularly applicable to situations where space is at a premium, for example in RFI suppression devices. In the latter case, eachtubular electrode 25 would receive a respective through wire (not shown) carrying signal information, the capacitor then acting as a multiway filter.
The embodiment of FIG. 2 comprises a discoidal body 40 of dielectric (ceramic) material having two pluralities of interleaved, mutually overlappingdisc electrodes 42a, 42b. The disc electrodes 42 terminate within the ceramic body 40, radially inwardly of itsperipheral surface 44 so as to leave respectiveannular gaps 46 between their outer peripheral edges and theperipheral surface 44 of the ceramic body. Thelatter surface 44 is provided withmetallisation 48.
One set 42c of the disc electrodes are interconnected by a metal pin or conductive via 50 extending through the ceramic body 40 and theother set 42b of disc electrodes are interconnected by a metal pin or conductive via 52. The conductive pins orvias 50, 52 can terminate in respectivemetallised areas 54a, 54b on the end faces of the ceramic body 40 to enable external electrical connection to be made thereto.
The latter arrangement for the connections to theinternal disc electrodes 42a, 42b enhances the performance of the capacitor in high humidity conditions and at high voltages (because of the wide separation of the terminations). Tubular electrodes separated from the disc electrodes as shown at 25 in FIG. 1 could also be incorporated in this embodiment to increase capacitance further.
FIG. 3 shows another embodiment of adiscoidal capacitor 15 in accordance with the present invention, which has a cylindricalinner termination 16 coaxially disposed within a cylindricalouter termination 17. Thecapacitor 15 further comprises layers ofannular discs 18, the inner circumferences of which are in contact with theinner termination 16. The diameters of thedisc 18 are such that narrowannular gaps 19 arise from the separation between the outer circumferences of eachdisc 18 and theouter termination 17, the outer termination extending perpendicularly with respect to thediscs 18. If theinner termination 16 is then polarised with respect to theouter termination 17, small areas of relatively high charge distribution will develop across thegaps 19. This results because the side edges of the discs have a relatively small surface area in comparison with that of theouter termination 17 to which they are exposed. This arrangement, as illustrated diagrammatically in FIG. 6, allows increased capacitance, independent of axial separation of the individual electrodes. For thicker walled disc electrodes, the effect can be utilised to reduce the impact of process variations and hence produce tight tolerance batches.

Claims (7)

We claim:
1. A multilayer discoidal capacitor comprising:
a plurality of laterally spaced, planar electrodes disposed within a dielectric body; and
at least one cylindrical electrode extending perpendicularly to the planar electrodes, all of said planar electrodes being separated from said at least one cylindrical electrode so that said plurality of laterally spaced, planar electrodes are configured such that the capacitance characteristic of the capacitor is determined at least in part by the concentrated charge distribution in "stray" electric fields arising at edges of the planar electrodes, wherein the capacitance characteristic of the capacitor is determined at least in part by the "stray" electric fields arising between the edges of said planar electrodes and said at least one cylindrical electrode.
2. A multilayer discoidal capacitor according to claim 1, wherein said at least one cylindrical electrode extends through the dielectric body, said planar electrodes having at least one corresponding region of discontinuity which surrounds said cylindrical electrode so that there exists between each planar electrode and the cylindrical electrode an annular separation.
3. A multilayer discoidal capacitor according to claim 2, wherein said cylindrical electrode is formed by metallising the wall of a cylindrical hole in the dielectric body.
4. A multilayer discoidal capacitor according to claim 2, wherein the outer edges of the planar electrodes extend to the peripheral edge of the dielectric body where they are electrically connected together by a metallisation area applied to said peripheral edge of the body.
5. A multilayer discoidal capacitor according to claim 2, wherein the outer edges of the planar electrodes terminate inwardly of the peripheral edge of the dielectric body and are connected together by at least one conductive pin extending through said dielectric body.
6. A multilayer discoidal capacitor according to claim 1, wherein said cylindrical electrode which extends perpendicularly to said planar electrodes is located around a peripheral edge of said dielectric body, the outer peripheries of the planar electrodes terminating within the dielectric body so as to be separated from said cylindrical electrode.
7. A multilayer discoidal capacitor according to claim 6, wherein the planar electrodes are arranged in two sets of interleaved, overlapping electrodes, the electrodes in each said set being electrically interconnected by means of a respective conductive pin.
US07/695,6311990-05-031991-05-03Multilayer discoidal capacitorsExpired - LifetimeUS5177663A (en)

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GB9009997AGB2243722A (en)1990-05-031990-05-03Improvements in multilayer discoidal capacitors

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US5177663Atrue US5177663A (en)1993-01-05

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EP (1)EP0455496B1 (en)
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GB (1)GB2243722A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5657199A (en)*1992-10-211997-08-12Devoe; Daniel F.Close physical mounting of leaded amplifier/receivers to through holes in monolithic, buried-substrate, multiple capacitors simultaneous with electrical connection to dual capacitors otherwise transpiring, particularly for hearing aid filters
US5817130A (en)*1996-05-031998-10-06Sulzer Intermedics Inc.Implantable cardiac cardioverter/defibrillator with EMI suppression filter with independent ground connection
US5872695A (en)*1997-02-261999-02-16International Business Machines CorporationIntegrated electronic components having conductive filled through holes
US6088215A (en)*1997-11-032000-07-11Motorola, Inc.Capacitor and method of manufacture
US6327134B1 (en)*1999-10-182001-12-04Murata Manufacturing Co., Ltd.Multi-layer capacitor, wiring board, and high-frequency circuit
US6366443B1 (en)*1997-12-092002-04-02Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely-spaced interior conductive planes reliably connecting to positionally-tolerant exterior pads through multiple redundant vias
US6477032B2 (en)*2001-01-312002-11-05Avx CorporationLow inductance chip with center via contact
US6542352B1 (en)*1997-12-092003-04-01Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6545854B2 (en)*2001-05-252003-04-08Presidio Components, Inc.Fringe-field non-overlapping-electrodes discoidal feed-through ceramic filter capacitor with high breakdown voltage
KR20030062021A (en)*2002-01-152003-07-23(주) 래트론Manufacturing method of cylindrical ceramic capacitor
US6661639B1 (en)2002-07-022003-12-09Presidio Components, Inc.Single layer capacitor
US20030231455A1 (en)*2001-05-252003-12-18Devoe Daniel F.Capacitor with high voltage breakdown threshold
US20040084199A1 (en)*2002-10-232004-05-06Chereson Jeffrey D.Low profile filter
US6885539B1 (en)2003-12-022005-04-26Presidio Components, Inc.Single layer capacitor
US20050141206A1 (en)*2003-12-292005-06-30Kaladhar RadhakrishnanArray capacitors with voids to enable a full-grid socket
US6917509B1 (en)2002-11-212005-07-12Daniel F. DevoeSingle layer capacitor with dissimilar metallizations
US20060138450A1 (en)*2004-12-232006-06-29Stmicroelectronics S.A.Schottky diode with a vertical barrier
US20060173506A1 (en)*2005-02-012006-08-03Greatbatch-Sierra, Inc.Apparatus to improve the high voltage flashover characteristics of emi feedthrough filters used in active implantable medical devices
US7307829B1 (en)*2002-05-172007-12-11Daniel DevoeIntegrated broadband ceramic capacitor array
US8547677B2 (en)2005-03-012013-10-01X2Y Attenuators, LlcMethod for making internally overlapped conditioners
US8587915B2 (en)1997-04-082013-11-19X2Y Attenuators, LlcArrangement for energy conditioning
US9036319B2 (en)1997-04-082015-05-19X2Y Attenuators, LlcArrangement for energy conditioning
US9054094B2 (en)1997-04-082015-06-09X2Y Attenuators, LlcEnergy conditioning circuit arrangement for integrated circuit
US20160079001A1 (en)*2014-09-122016-03-17Yi-Jun LinGraphene Electrode Based Ceramic Capacitor

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GB9623460D0 (en)*1996-11-091997-01-08Oxley Dev Co LtdElectronic components incorporating capacitors
JP2000512810A (en)*1997-04-252000-09-26コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method of manufacturing encapsulated multilayer capacitor and encapsulated multilayer capacitor
JP3701138B2 (en)1999-04-232005-09-28松下電器産業株式会社 Manufacturing method of electronic parts
DE102005016590A1 (en)*2005-04-112006-10-26Epcos Ag Electric multilayer component and method for producing a multilayer component

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Cited By (46)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5657199A (en)*1992-10-211997-08-12Devoe; Daniel F.Close physical mounting of leaded amplifier/receivers to through holes in monolithic, buried-substrate, multiple capacitors simultaneous with electrical connection to dual capacitors otherwise transpiring, particularly for hearing aid filters
US5817130A (en)*1996-05-031998-10-06Sulzer Intermedics Inc.Implantable cardiac cardioverter/defibrillator with EMI suppression filter with independent ground connection
US5872695A (en)*1997-02-261999-02-16International Business Machines CorporationIntegrated electronic components having conductive filled through holes
US8587915B2 (en)1997-04-082013-11-19X2Y Attenuators, LlcArrangement for energy conditioning
US9373592B2 (en)1997-04-082016-06-21X2Y Attenuators, LlcArrangement for energy conditioning
US9054094B2 (en)1997-04-082015-06-09X2Y Attenuators, LlcEnergy conditioning circuit arrangement for integrated circuit
US9036319B2 (en)1997-04-082015-05-19X2Y Attenuators, LlcArrangement for energy conditioning
US9019679B2 (en)1997-04-082015-04-28X2Y Attenuators, LlcArrangement for energy conditioning
US6088215A (en)*1997-11-032000-07-11Motorola, Inc.Capacitor and method of manufacture
US6366443B1 (en)*1997-12-092002-04-02Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely-spaced interior conductive planes reliably connecting to positionally-tolerant exterior pads through multiple redundant vias
US20030161091A1 (en)*1997-12-092003-08-28Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US20030161090A1 (en)*1997-12-092003-08-28Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6542352B1 (en)*1997-12-092003-04-01Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6751082B2 (en)*1997-12-092004-06-15Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6753218B2 (en)*1997-12-092004-06-22Daniel DevoeCeramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6327134B1 (en)*1999-10-182001-12-04Murata Manufacturing Co., Ltd.Multi-layer capacitor, wiring board, and high-frequency circuit
US6477032B2 (en)*2001-01-312002-11-05Avx CorporationLow inductance chip with center via contact
US20030231455A1 (en)*2001-05-252003-12-18Devoe Daniel F.Capacitor with high voltage breakdown threshold
US6545854B2 (en)*2001-05-252003-04-08Presidio Components, Inc.Fringe-field non-overlapping-electrodes discoidal feed-through ceramic filter capacitor with high breakdown voltage
US6760215B2 (en)2001-05-252004-07-06Daniel F. DevoeCapacitor with high voltage breakdown threshold
KR20030062021A (en)*2002-01-152003-07-23(주) 래트론Manufacturing method of cylindrical ceramic capacitor
US7307829B1 (en)*2002-05-172007-12-11Daniel DevoeIntegrated broadband ceramic capacitor array
US20050057887A1 (en)*2002-07-022005-03-17Presidio Components, Inc.Single layer capacitor
US6822847B2 (en)2002-07-022004-11-23Presidio Components, Inc.Single layer capacitor
US6969647B2 (en)2002-07-022005-11-29Presidio Components, Inc.Method of making single layer capacitor
US20040090733A1 (en)*2002-07-022004-05-13Presidio Components, Inc.Single layer capacitor
US6661639B1 (en)2002-07-022003-12-09Presidio Components, Inc.Single layer capacitor
US6822845B2 (en)2002-10-232004-11-23Spectrum Control, Inc.Low profile filter
US20040084199A1 (en)*2002-10-232004-05-06Chereson Jeffrey D.Low profile filter
US6917509B1 (en)2002-11-212005-07-12Daniel F. DevoeSingle layer capacitor with dissimilar metallizations
US6885539B1 (en)2003-12-022005-04-26Presidio Components, Inc.Single layer capacitor
US7444726B1 (en)2003-12-022008-11-04Presidio Components, Inc.Method of making an essentially monolithic capacitor
US7685703B1 (en)2003-12-022010-03-30Presidio Components, Inc.Method of making an essentially monolithic capacitor
US20070253142A1 (en)*2003-12-292007-11-01Kaladhar RadhakrishnanArray capacitors with voids to enable a full-grid socket
KR100847936B1 (en)2003-12-292008-07-22인텔 코오퍼레이션Array capacitors with voids to enable a full-grid socket
US7463492B2 (en)2003-12-292008-12-09Intel CorporationArray capacitors with voids to enable a full-grid socket
US20050141206A1 (en)*2003-12-292005-06-30Kaladhar RadhakrishnanArray capacitors with voids to enable a full-grid socket
WO2005067045A1 (en)*2003-12-292005-07-21Intel CorporationArray capacitors with voids to enable a full-grid socket
US7265995B2 (en)2003-12-292007-09-04Intel CorporationArray capacitors with voids to enable a full-grid socket
US20060138450A1 (en)*2004-12-232006-06-29Stmicroelectronics S.A.Schottky diode with a vertical barrier
US20060173506A1 (en)*2005-02-012006-08-03Greatbatch-Sierra, Inc.Apparatus to improve the high voltage flashover characteristics of emi feedthrough filters used in active implantable medical devices
US7551963B2 (en)*2005-02-012009-06-23Greatbatch Ltd.Apparatus to improve the high voltage flashover characteristics of EMI feedthrough filters used in active implantable medical devices
US9001486B2 (en)2005-03-012015-04-07X2Y Attenuators, LlcInternally overlapped conditioners
US8547677B2 (en)2005-03-012013-10-01X2Y Attenuators, LlcMethod for making internally overlapped conditioners
US20160079001A1 (en)*2014-09-122016-03-17Yi-Jun LinGraphene Electrode Based Ceramic Capacitor
US10102973B2 (en)*2014-09-122018-10-16Nanotek Instruments, Inc.Graphene electrode based ceramic capacitor

Also Published As

Publication numberPublication date
EP0455496A2 (en)1991-11-06
DE69112484D1 (en)1995-10-05
EP0455496A3 (en)1991-12-27
GB2243722A (en)1991-11-06
GB9009997D0 (en)1990-06-27
EP0455496B1 (en)1995-08-30

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