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US3783822A - Apparatus for use in deposition of films from a vapor phase - Google Patents

Apparatus for use in deposition of films from a vapor phase
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US3783822A
US3783822AUS00251931AUS3783822DAUS3783822AUS 3783822 AUS3783822 AUS 3783822AUS 00251931 AUS00251931 AUS 00251931AUS 3783822D AUS3783822D AUS 3783822DAUS 3783822 AUS3783822 AUS 3783822A
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discs
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parts
deposition
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J Wollam
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Abstract

Separate platform discs for carrying workpieces or substrates such as slices or wafers of semiconductor material in a deposition environment are moved in a common circular orbit and rotated by the action of two co-axial annular support surfaces upon which each disc rests at opposite areas of the lower periphery of the disc, one of these support surfaces being driven with respect to the other in rotation about the axis common to the two annular supports. The temperature of the discs and/or substrates is maintained by proximity to a heat or other energy source or sink, with deposition occurring on the exposed upper surface of the substrate resting on the disc.

Description

O United States Patent 1 [111 3,783,822
Wollam Jan. 8, 1974 [54] APPARATUS FOR USE IN DEPOSITION OF 3,675,624 7/1972 Hunts et a1. 118/503 FILMS FROM A VAPOR PHASE 1 [76] Inventor: John S. Wollam, 53 Atcott St., ExammerMmS Kaplan Acton, Mass. 01720 22 Filed: May 10, 1972 1 1 ABSTRACT 21 1 ;251,93 Separate platform discs for carrying workpieces or substrates such as slices or wafers of semiconductor material in a deposition environment are moved in a [52] U.S. Cl. 118/49-1 common circular orbit and rotated by the action of [51] f Cl xr CZgElQ/lv two co-axial annular support surfaces upon which [58] Fleld of Search 118148-495, 500, 503, 53, each disc tests at pp i areas of thelower p p W 1 18/319; 117/1071; 269/55'57 ery of the disc, one of these support surfaces being driven with respect to the other in rotation about the [56} References C'ted axis common to the two annular supports. The tem- UNITED STATES PATENTS perature of the discs and/or substrates is maintained 3,424,628 l/l969Winings 118/495 x y p x m ty to a heat or other gy source sink, 3,436,255 4/1969 Harris et al..,.. with deposition occurring on the exposed upper sur- ,5 ,5 8/1970 Qo a face of the substrate resting on the disc. 3,594,227 7/1971 Oswald ll7/l07.l X 3,608,519 9/1971 Richardson eta1 118/48 9 Claims, 8 Drawing Figures 3,633,537 l/1972 Howe 118/48 PAIENTED JAN 8 74 SHEET 3BF 1 FIG. 6
PAIENTEDJAN 8M4 3.783.822
SHEET 5 OF 5 VAPORS VAPORS AND GAS FOR DEPOSITION APPARATUS cal reaction which produces the material of the film is initiated or enhanced by heat or other energy imparted to the reactants at or near the surfaces to be coated.
In semiconductor technology, the treatment of a substrate or slice or wafer of semiconductor material often includes etching or the deposition of films from the vapor phase such as epitaxial single-crystal silicon, polycrystalline silicon or metals, or amorphous silicon dioxide, or silicon nitride, or other films on the substrate. The deposition occurs when the wafer is heated while exposed to a mixture of gaseous materials which react to form a condensible substance which then deposits on the wafer. The uniformity of these films is highly dependent upon the success achieved in eliminating or minimizing variations in temperature across the surface of the wafer and eliminating or minimizing differences in flow and composition of the vapor or gaseous reactant materials at the wafer surfaces.
Methods of eliminating or minimizing variations in the factors affecting film'uniformity have been the subject of much study and experimentation. Some efforts to ensure that all wafers in a multi-wafer deposition apparatus, or that all areas of a single wafer in a lot of wafers, are exposed to essentially indentical conditions during deposition have entailed provision for the movement of rotation of the wafer or wafers and/or the source of the gaseous materials, with the objective of averaging out the effects of variations in these conditions. Some of these efforts have includeda planetary rotating system supporting the wafers during the deposition process.
' Heretofore, some planetary drive systems used to move the wafers throughout the gaseous and thermal environment during deposition have consisted of a mu]- titude of planetary gears with a sun gear inside the planetary orbit and a ring gear outside the planetary orbit. Either the sun gear or ring gear is held stationary while the other is rotated to move the planet gears in orbit and at the same time rotate each about its own axis.
The planetary gears carry the wafers o r substrates and so they are, in effect, disc shaped orbiting, rotating platforms for supporting the wafers in the gaseous and thermal environment during deposition. The wafers are heated to control the rate of deposition by heating the planetary gears which carry the wafers and so there is a substantial amount of deposition and formation of matter on the gears as well as on the wafers. This raises the requirement for frequency cleaning and/or replacement of the gears.
These planetary rotating systems using orbital gears as described above are limited in temperature by the characteristics of materials suitable for use in constructing gear drives. Materials of sufficient strength and toughness to perform well as planetary gears are usually not appropriate for use in vapor deposition apparatus, while materials such as quartz, alumina, silicon carbide, silicon, or graphite which are suitable for the high temperatures, sometimes required for a particular process, cannot be used for constructing gear drive systems, because they are either not machineable, or are too brittle or too soft for satisfactory operation.
It is one object of the present invention to provide a planetary rotating system for carrying a multitude of substrates in an environment for etching or deposition of films on the substrate.
It is another object to provide such a planetary rotating system which does not have any gears exposed to the gaseous and thermal environment needed for etching or deposition.
It is another object of the present invention to provide a structure for carrying substrates during etching or vapor deposition on orbiting rotating platforms, each platform experiencing no more stress in operation than that imposed by the platforms own weight and the weight of the substrate or substrates carried thereon.
It is another object to provide such a planetary rotating system for etching substrates or for vapor deposition on substrates, wherein deposition on the planetary support disc for the substrates produces little or no deleterious consequences.
It is another object of the present invention to provide a planetary structure which allows the orbiting components to be fabricated of materials which are not usually incorporated into gear drive systems, including materials such as quartz, alumina, silicon carbide, silicon, or graphite.
it is another object to provide a planetary rotating system for supporting and heating substrates in an etching or a deposition process in which all moving parts in the vicinity of the etching or deposition area, exposed substantially to the etching or the deposition environment, are driven by simple friction forces.
It is another object of the present invention to provide etching or deposition apparatus having orbiting rotating platforms for substrates, the platforms being heated or maintained at a predetermined temperature by proximity to energy sources or a temperature sink to maintain the substrates at the predetermined temperature; the apparatus being so constructed that it is readily disassembled for cleaning and/or replacement of parts.
It is another object to provide an etching or deposition system for substrates having at least one set of orbiting rotating platforms for the support of substrates in an atmosphere of gases and vapors which are fed into a reaction space above the substrates via an axial conduit supported by the base of the apparatus, whereby a cover closing the apparatus does not have any connection to sources of the gases and vapors.
Embodiments of the present invention described herein include single and-double circular arrays or sets of orbiting, rotating disc platforms for carrying substrates during etching or deposition on the exposed surfaces of the substrates, the platforms being heated to heat the substrates as a control of the etching or the deposition rate and all movement of the discs being induced by friction forces. Thus, deposition on the discs or on the parts in contact therewith does not interfere with operation of the apparatus and the discs can be made of the most suitable materials available both from the view of inertness of the material to the deposition environment and the effectiveness of heating the discs and/or substrates either by the transfer of heat energy,
or by induced electrical energy or radiation, in an effort I to achieve uniform temperature. distribution throughout each disc and from disc to disc and, therefore, throughout all parts of all substrates concerned. A substantially uniform mixture of vapor and/or gaseous material for the etching or the deposition is produced in the space above the discs either by introducing the vapor or gas through ports in a lid enclosing that space or by carrying the vapor or gas through axial conduits supported by the base of the apparatus and extending into and discharging into the reaction space.
Other objects and features of the invention will be more apparent from the following specific description of several embodiments of the invention. These embodiments represent the best known uses of the invention and are illustrated by the figures in which:
FIG. 1 is a plan view of one embodiment showing apparatus with the cover removed revealing four planetary disc-shaped platforms driven in orbit and rotation by a central simple friction drive race and heated by induction coils below the discs;
FIG. 2 is a front sectional view of the apparatus in FIG. 1 shown with the cover attached whereby vapor and gas is introduced through ports in the cover;
FIG. 3 is a front sectional view of apparatus similar to the apparatus in FIGS. 1 and 2 with the discs tilted so that the substrates face toward the axis of the apparatus;
FIG. 4 is a front sectional view of another similar embodiment wherein the discs are tilted so that the substrates face away from the center of the apparatus;
FIGS. 5 and 6 are plan and front sectional views of another embodiment of the invention including two sets of orbiting platform discs having a common drive ring or annular support surface, all drives to the discs being .simple friction forces, and an axial rotating branched conduit, or nozzle array, for carrying gaseous or vapor deposition materials into the deposition space above the discs and mechanically stirring the gas by a drive which is common to the drive for the disc drive ring; and
FIGS. 7 and 8 are plan and front section views of another embodiment having heater elements imbedded in the supports for the orbiting discs, leveling posts for the supports, a common drive ring for the discs which has very low thermal mass and low thermal conduction and axial conduits supported by the base of the apparatus for carrying more than one gas or vapor into the reaction space above the discs for mixing and etching or deposition on the substrates carried on the discs.
Turning first to FIGS. 1 and 2, there is shown apparatus for etching or for carrying out vapor or gaseous deposition on the exposed surfaces of substrates which may be wafers or slices of semiconductor material carried on a single set of orbiting, rotating discs driven in orbit and rotation by simple friction forces and heated by an induction coil below the discs. Apart from the parts of the apparatus shown in this and other embodiments of the invention described herein, the apparatus can be used for other treatment of the substrates in addition to etching and deposition. For example, the apparatus can be used for sputtering processes whereby material is added to or removed from the exposed surfaces of the substrates. The apparatus in FIGS. 1 and 2 consists of abase plate 1 and acylindrical housing 2 for containing and supporting the induction heating coil and the orbiting, rotating discs. A cover 3 is fitted on top of the housing defining thereaction space 4 above the discs and selected gases and vapors are introduced into the space by amixing port 5 at the top of the cover centrally located along theaxis 6 of the apparatus.
Each of theplatform discs 7, 8, 9, and 10 such asdisc 7 is a composite or assembly of two discs; a quartz disc 11 beneath agraphite susceptor disc 12. The lower or quartz disc in each of these-oribiting disc platforms rests on an insideannular drive surface 14 which is part of thecentral support rotor 15, and also rests on the outerannular support surface 16 which may be part of thelower housing 2. The drivensurface 14 is defined by a step 17 in the support rotor 15 (also called the drive race) and the outerannular support surface 16 is defined by astep 18 on the inside of the lower housing 2 (also called the fixed race). The orbiting disc assemblies are prevented from leaving the desired circular orbit by therise 19 on the step 17 and by the rise 20 on thestep 18.
The graphite susceptor discs, such asdiscs 12, on each of theplatforms discs 7 to 10 are directly heated by radiation from a radio -frequency (rf)induction coil 21 below the discs. This coil is powered by energy from anrf source 22 which is outside of the apparatus.Transmission lines 23 couple rf energy from the source to the coil. The coil is substantially flat and may be disposed immediately beneath thecomposite platform discs 7 to 10 in close proximity to the quartz discs, such as quartz disc 11, on the bottom thereof. Therf coil 21 is preferably supported over a highly electricallyconductive plate 24 which does not absorb, but reflects the rf energy towards theplatform discs 7 to 10. Between the if coil and the discs may be interposed adielectric plate 25 made of a material which is substantially transparent to the rf energy and so does not reflect nor absorb the energy, but tends to focus the rf energy onto the graphite susceptor disc above. The quartz disc beneath the graphite susceptor disc also does not absorb or reflect the rf energy and tends to focus it into the graphite susceptor. Thesupport rotor 15 is also preferably quartz and so is thedrive shaft 26 which extends through thebase plate 1 to agear box 27 and drivemotor 28. Thus, the materials composing the parts surrounding the rf coil are such that these parts are not heated by the rf energy; only thegraphite susceptor 12 on which the substrate (which may be a wafer or slice of semiconductor) rests is heated. The quartz disc 11 which is the bottom part of each of theplatform discs 7 to 10 provide a hard non-wearing surface for contact with the driven and stationary annular support surfaces defined by the driven and fixed races, 14 and 16 respectively, and so there is no frictional wear on the softer graphite susceptor material. Other hand refractory materials such as alumina or silicon carbide could be used in place of quartz for the quartz discs 11.
This apparatus is particularly designed for high temperature deposition processes up to about 1,300 C, for example, deposition reactions such as the pyrolysis of silane or silicon tetrachloride in the growth of epitaxial silicon films. At this temperature range, quartz and silicon carbide coated graphite are satisfactory for use in enclosing the reaction ordeposition space 4 as they are substantially inert to the vapors and gases used and do not produce undesirable gases or vapors. The rest of the parts of the apparatus below thereaction space 4 are compatible with the environment in that they absorb no power from the rf field which heats the graphite susceptors in the orbiting platform discs. Accordingly, these parts are made of materials which are either good insulators such as alumina or other ceramics, or good conductors of electricity such as copper, silver, or red brass. These same considerations apply to the materials used in the construction of the vapor andgas ports 5 and thedrive shaft 26. They apply to a lesser extent to thebase plate 1 andhousing 2 which are substantially shielded from the rf coil by theplate 24.
This shielding effect as well as the position of the rf l0 coil may be varied by moving theplate 24 up and down on itssupport legs 29.
In operation, themotor 28 drives theshaft 26 with its support rotor in the counter-clockwise direction indicated by arrow as viewed from above. The frictional forces between the bottom peripheral edge of the quartz disc, such as 11, under each of theplatform discs 7 to 10, where the quartz disc of each engages theannular support surface 14, causes each of the platform discs to rotate in the clockwise direction, indicated byarrow 30 as viewed from the top and so the discs roll along the outerannular support surface 16 following an orbital path indicated byarrow 30 in the counterclockwise direction about theaxis 6 as viewed from the top. Clearly, each of thecomposite platform discs 7 to 10 is supported at small areas at opposite ends of the bottom periphery of the composite disc and so there is a minimum of heat conduction from the disc to the points of support.
Theplatform discs 7 to 10 are spaced from each other by their own dimensions as they substantially fill the annulus between the two annular support surfaces 14 and 16 with equal contiguous circles and they are constrained in the orbital path by therises 19 and 20 on their rotating and stationary races. This orbiting, rotating motion imparted to the substrates, such as semiconductor wafers, on the graphite susceptors insures a uniform temperature thorughout the exposed surface of the substrates and insures an average uniformity in the flow and composition of the reactant gases delivered to the exposed surfaces.
Modifications of the apparatus shown in FIGS. 1 and 2 for tilting theplatform discs 7 to 10 relative to the axis of the apparatus so that the discs tilt toward or away from the axis are illustrated in FIGS. 3 and 4. In FIG. 3, thehousing 32 onbase 31 provides an outerannular support surface 33 which is raised above the innerannular support surface 34 defined by the driven race 35 on thesupport rotor 36. The dielectric andmetal plates 37 and 38 between which therf coil 39 is sandwiched are conical in shape, the cone being upside down, to fit the contour defined by the inward tilt of thediscs 7 to 10. This configuration tends to promote a normal incidence of flow of the ingredients for deposition to the deposition surfaces of the workpieces carried by thediscs 7 to 10. 7
Another purpose for tilting the discs and workpieces toward the axis is that this configuration lends itself conveniently to heating the substrates by infra-red or other radiation whose source is exterior to a transparent cover of the reaction chamber.
The structure shown in FIG. 4 tilts the discs away from the axis. Here, thehousing 40 on thebase 41 provides the outer step orrace 42 includingannular support surface 43 lower than the innerannular support surface 44 on thesupport rotor 45. The dielectric andmetal plates 46 and 47 with therf coil 48 in between have conical shapes to conform with the tilted positions of the discs. Here, the conical confirmation of these parts is upright. The purpose for tilting the substrates away from theaxis 6 may be to insure that there is no direct or normal projection of the ingredients for the deposition reaction onto the exposed surfaces of the substrates on the disc. Another purpose for tilting the discs and substrates away from theaxis 6 is that this configuration lends itself conveniently to heating the workpieces by infra-red or other radiation whose source is exterior to a transparent wall of the reaction chamber. This configuration also increases the firctional forces on each disc at theouter race 42. The quartz disc in each of the support discs abuts the surface or rise 49 defined by theouter race 42 and since the frictional forces are greater here, at least because of greater contact surface, than at the inner drivenannular support surface 44, each disc is inclined to roll along therace 42 without slipping and so the orbital rate of rotation of the discs in the apparatus is very constant.
The planetary deposition system illustrated in FIGS. 5 and 6 contains two sets of orbiting rotating platform discs for carrying the substrates or workpieces, an axial mechanically driven branched conduit for the vapors and gases supported at the base of the apparatus for carrying the vapors and gases to the reaction space above the substrates and resistance heaters attached to stationary plates beneath the discs for heating the plates so that they in turn heat the discs resting thereon. This apparatus is particularly designed for operation in the temperature range of 300 to 600 C. One common deposition reaction carried out at this temperature range is the reaction of gaseous silane with oxygen to produce a deposited amorphous film of silicon dioxide. In an atmosphere of silane and oxygen at temperatures up to 600 C, ordinary steel can be used and since resistance heaters are used rather than induction heating, the electrical qualitites of the materials used for the various parts are not important. On the other hand, it becomes most important to conduct heat by radiation, conduction, or convection from the races to the discs and so there must be an intimacy between the races and discs such as will accomplish this.
In FIG 6, the base plate 51 carries the whole structure, thehousing 52 and cover 53 serving merely to enclose the structure.
The inner stationary race andheating plate 54 coaxial with theaxis 55 of the apparatus is supported from the base bysupport legs 56. This part is circular and contains the innerstationary race 57 which defines the first or innerannular support surface 58 for supporting the inner edge of the first set ofdiscs 59 consisting of seven discs in all denoted 60 to 66. Theinner plate 54 carries a ring shapedresistor element 67 beneath on the portion thereof that extends beneath the annular space occupied by thediscs 60 to 66, and so the heater is positioned substantially in registration with that space and is directly below the first set of discs.
The outer stationary race andheating plate 68 concentric with theaxis 55 provides the outerstationary race 69 which defines the outerannular support surface 70 for supporting the discs in a second set ofdiscs 71 at their outer edges. This second set includesthev discs 72 and 73 shown in cross section in FIG. 6. Theouter plate 68 carries beneath it aresistor heater element 74 substantially in registration with the portion thereof that extends beneath the discs in theset 71 and so theheater element 74 is in registration with the discs in this set. A support for theplate 68 includes legs 75.
The outer edges of the discs in theset 59 and the inner edges of the discs in theset 71 are supported by the driven race sleeve orcylinder 77. The drivenraces 78 and 79 at the end of this sleeve for the disc sets 59 and 71 define the annular support surfaces 80 and 81 for supporting discs in thesets 59 and 71, respectively. These driven support surfaces, 80 and 81, are referred to also as the second and third support surfaces and the stationary support surfaces 58 and 70 are referred to also as the first and fourth support surfaces, respectively.
Aring gear 83 attached to the opposite end of thedrive cylinder 77 is driven byplanetary drive gear 84 at the end ofdrive shaft 85 from agear box 86 driven bymotor 87.Drive gear 84 also drivesaxial gear 88 connected to the lower end ofshaft 89 which supports therotating gas nozzles 90 at the other end of the shaft for conducting vapor or gaseous materials into the reaction ordeposition space 91 above the discs. Theshaft 89 passes through anopening 92 at the center of theinner plate 54, this opening being just sufficient to pass the shaft without friction and so limit the escape paths for the dispensed deposition products into theheater space 93 below the race plates.
The vapors and gases for deposition are introduced to the apparatus viatube 94 which passes axially through thedrive shaft 89 for the nozzles and empties these ingredients into thenozzle tube 95 in the interaction space. These vapors and gases are injected into the interaction space from the nozzle viaorifices 96.
The rotatingnozzle 90 may include two or four or more arms which reach across the sets of discs, each having orifices distributed therealong to insure uniform spraying of the gases and vapors for deposition over the surfaces of the disc. The nozzle and its drive shaft are supported on theinlet pipe 94 by bearings such as 97 and 98 at each end thereof. This pipe provides a clear passage without moving or slipping parts from outside the apparatus to inside the nozzle in thereaction space 91 above the discs and workpieces. The nozzles are rotated mechanically as the drivenraces 78 and 79 for the inner and outer sets of discs are driven and the arrangement of gears may quite easily be such that the nozzles rotate in the same direction or in the opposite direction to the direction of orbiting of the discs.
With the drive system shown and theplanetary drive gear 84 driving in the direction ofarrow 99, the nozzles will rotate in the clockwise direction viewed from the top as indicated by FIG. and therace drive cylinder 77 will drive in the counter-clockwise direction as indicated byarrow 101 in FIG. 5. This will cause both sets ofdiscs 59 and 71 to orbit in the direction ofarrow 101 in the annular spaces in which they are contained. Theinner discs 59 will individually rotate counterclockwise and the discs in the outer sets will rotate clockwise as indicated by direction arrows on the discs in FIG. 5. In this structure, the relative orbiting and rotational directions of the discs in these sets are determined by the driven races at the inside of the outer set and at the outside of the inner set of discs. However, the relative direction or rotation of the nozzles depends upon the drive mechanism arranged by the gears inspace 93.
Each of the platform discs insets 59 and 71 preferably contains at the bottom thereof a projecting discshaped protuberance such as 102 on thedisc 60. This protuberance or projection projects toward the extending portion of the race plate immediately below, but does not touch the extending portion. The only points of contact of the disc with anything but the workpieces remains still the stationary and driven annular support surfaces such as 58 and for thedisc 60. The purpose of theprojection 102 is to place as much surface area of the disc immediately adjacent, but not touching, theheated plate 54 as it is feasible so that the heat is carried with reasonable efficiency by convection, conduction, and radiation from the plate into the discs.
In operation of the apparatus shown in FIGS. 5 and 6 electrical power to the heaters is carried viaterminals 103 and 104 andcables 105 and 106 to theheaters 67 and 74. The motor drive drives the sets of discs carrying workpieces which may be wafers of semiconductor such as 107 in orbit and rotation while the driven nozzle dispenses the vapors 108 for deposition in thespace 91 immediately above. The effective uniform distribution of heat throughout the discs is insured by the continual movement and rotation of each of the discs and so the wafers carried by the discs are heated uniformly throughout. The vapor and gases for deposition are distributed evenly throughout thespace 91 by the distribution of the orifices and the stirring action of the rotating nozzles. This in combination with the heating technique and motion of the discs insures even deposition on the exposed surfaces of thewafers 107. Since the only contacting moving parts are the friction contacts at the annular support surfaces defined by the stationary and driven races, the effects of deposition on the parts in the reaction space are insignificant. In the heater space and drivearea 93 beneath, some deposition occurs on the hotter parts due to gases and vapors leaking into this area. However, the moving parts which are the gears are not heated and so they accrue very little deposition.
Another embodiment of the invention containing two sets of rotating orbiting platform discs and particularly adapted for operation at the lower temperature range of 300 to 600 C is illustrated in FIGS. 7 and 8. Here, the vapors orgases 109 for deposition are introduced to thereaction space 110 axially through the base and also through a port in the cover. Resistor heater elements are imbedded in the inner and outer stationary heating and race plates and means are provided for clearing vapors and gases from the drive gears in the space 111 beneath the heaters. This structure is constructed to facilitate quick disassembly to clean or replace parts and replace the heaters imbedded in the stationary plates.
All these structures inside the apparatus are mounted to thebase plate 112 and enclosed by thecylindrical housing 113 andcover 114. Some of the reactants for deposition are introduced through twocoaxial pipes 115 and 116 extending through the base and sealed thereto and into thereaction space 110 where the reactants are discharged from the pipes. Other vapors or gases may be introduced throughport 117 in the cover.
The inner heating andrace plate 118 has the innerannular support surface 119 for carrying the inner set ofdiscs 120 at the inner edge of each of the discs such as 121 in the inner set. The outer heating andrace plate 122 provides the outerannular support surface 123 for supporting the twelve discs in theouter set 124 at the outer edges of discs in that set such as thedisc 125.
In the relatively narrow annular space'between theouter plate 122 and the outside edge of theinner plate 118 is locatedthedrive ring 126 at the end of a thinwalled cylinder 127 which extends toward the bottom of the apparatus into the drive space 111. Thetop surface 128 of thedrive ring 126 provides an annular support surface for both sets of discs. This is also referred to as the driven race. On this surface rest the inner edges of the outer set of discs and the outer edges of the inner set of discs.
The drive mechanism is similar to the drive mechanism in the embodiment shown in FIGS. and 6. It may include a ring gear 131attached to the end ofcylinder 127 and engaged by aplanetary drive gear 132 all held in position by acentral sun gear 133 and idlingplanetary gears 134 suitably placed between the sun gear and the ring gear. At theplanetary drive gear 132 and at the planetary idle'gears thrust bearings such as thrust bearing 135 'are provided against the meshing points .of these gears with the ring gear and sun gear and a support pad such as 136 to the base is provided for each. Thesun gear 133 may be mounted to abearing 137 attached to thecentral pipe 116 which carries deposition ingredients into the apparatus.
Aplate 138 which shields the gears from the deposition gases and vapors is located inside thecylinder 127 between the bottom of theinner plate 118 and the gears. This plate is supported by three'pedestals such aspedestal 139 mounted to thebase 112. Thesepedestals 139 also support theinner plate 118 and parts attached thereto. Between theshield plate 138 and gears v and carried by this plate is apipe 140 which conducts an inert purging or cleaning gas into the gear space 111 and discharges the gas throughnozzles 141 which direct the gas particularly to thering gear 131 clearing the teeth of that gear of deposition gases and particles which could tend to clog gears. The inert gas is fed to the ring tube .140 through aflexible tube 142 which goes through the base plate for external access.
The inner and outer heating andrace plates 118 and 122 are generally washer-shaped, the inner fitting inside theouter and defining the annular space in between for thedrive race ring 126. To the bottom of each of these plates is attached a plurality of layers of thermally insulating material such as thelayers 143 attached to the bottom of the inner plate and layers 144 attached to the bottom of the outer plate which thermally insulate the gear space 111 from the heated plates. These layers are attached to the bottom of the inner and outer plates by bolts such as 145 and 146, respectively.
The inner and outer plates with their attached layers of insulation are each supported from the base 112 by at least three adjustable support pedestals. The inner plate is supported by adjustable pedestals such as 139 and the outer plate is supported by adjustable support pedestals 147. In addition, theinner supports 139 carry theshielding plate 138. Otherwisethesupport pedestals 139 and 147 are identical.
Each support pedestal such as 147, consists of apillar 148 attached to thebase 1 12. Asupport rod 149 screws into the pillar and is locked thereto bylock nut 151. Therod 149 extends into the bottom end of ahole 152 bored through the layers ofinsulator 143 and theplate 122 emerging from the top of the plate beneath the outer set of discs. This bored hole provides a substantial clearance for therod 149 to allow for lateral thermal expansion of the various parts during operation. The portion of the hole bored in theplate 122 is tapped and a leveling set screw 155 screws into this and abuts theend 156 of the rod. With three such support points provided for each of the inner and outer plates, the plates can be quickly leveled by merely removing thecover 114 and a few of the discs to gain access to the screws 155 and then turning these screws from above to level the plates.
The axial position of theshielding plate 138 carrying the ring tube for discharging cleaning gas is less critical, however, this can be adjusted by adjusting thenut 157 on the support pedestals 139.
Heating elements are contained inholes bored in the inner and outer heating and race plates. These holes are bored through each plate parallel to the plane of the plate and located so that they do not cross the taps for the bolts or 146 and do not cross the holes such as 152 bored for the support pedestals. Three heating element bored holes such asholes 161 to 163 are provided in theinner plate 118 and fourholes 164 to 167 are provided in theouter plate 122. The heating elements denoted generally 168 are loaded in these holes and may be electrical cartridge heaters each made to the length of the hole in which it is located. The cartridge heating elements may connect in electrical series or in parallel by wires which are not shown and which emerge through the base plate for coupling to an electrical power source. The leads to the elements are preferably sufficiently long that the inner and outer heating and race plates can be lifted from their support posts sufficiently so that the heating elements can be individually removed from the plates and replaced when necessary. The disconnection of the lead wires to these elements and reconnection of the wires to the replacement elements can all be done while the plates are lifted vertically from the apparatus. Thereafter, the plates are simply returned to the support pedestals. Once the plates are correctly adjusted, the levelling set screws such as screw generally need no further attention but may be readjusted as necessary to bring the plates into the proper level aspect.
Numerous embodiments of the invention are described herein each incorporating certain features of the invention whereby certain advantages for relatively high and low temperature deposition operation are gained. These embodiments are intended to represent the best known uses of the invention. The various structural features described herein with relationship to the different embodiments may be combined in somewhat different manners from described herein and some modifications and variations may be made to these within the state of the art without deviating from the spirit and scope of the invention as set forth in the appended claims.
each disc being large enough to span the space be-- tween said support surfaces and rest at the bottom periphery of the disc at opposite points thereof on the first and second surfaces, and
means for driving one of said disc support surfaces in rotation about the common axis relative to the other support surface,
whereby the discs move in an orbit about the common axis and each disc rotates on its own axis in the treating area two sets of said platform discs being provided, an
inner set and an outer set,
the inner set resting on the first and second disc support surfaces,
a third disc support surface for the outer set of discs on said second part,
a fourth disc support surface for the outer set of discs on a third part concentric with the first and second parts, and
drive means coupled to said second part for producing a relative rotational motion about the common axis of the second part, relative to the first and third parts, I
whereby the inner set of discs moves in one orbit about the common axis, the outer set of discs moves in a large orbit about the common axis and each disc in both sets rotates on its own axis.
2. Apparatus as inclaim 1 wherein,
' the first and third parts are stationary and the second part is driven in rotation.
3. Apparatus as inclaim 2 wherein,
the first and third parts are annular plates the outside diameter of the first plate being less than the inside diameter of the third plate and defining an annular space in between in which the second part is located,
the first annular support surface is substantially at the inner edge of the first plate, and
the fourth annular support surface is substantially at the outer edge of the third plate,
whereby a substantial area of the first and third parts are adjacent the bottoms of the discs in the first and second sets, respectively.
4. Apparatus as in claim 3 wherein,
the second part is attached to the end of a cylinder concentric with the common axis, and
the drive means connects to the other end of the cylinder.
5. Apparatus as inclaim 15 wherein, the apparatus is in a housing, means are provided for introducing a vapor into the housing for treating the workpieces.
6. Apparatus as inclaim 1 and further including,
electrical heater elements contiguous with the first and third parts for applying heat thereto.
7. Apparatus as inclaim 1 wherein,
the discs are composed of a material relatively highly susceptible to predetermined radiation,
means are provided for directing said radiation to the discs to heat the discs, and
the first and second parts are made of a material not relatively highly susceptible to the radiation.
8. Apparatus as inclaim 6 wherein,
the discs are of high purity iron.
9. Apparatus as inclaim 7 wherein,
the radiation is rf radiation, and
the discs are composed at least partially of graphite.
UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION Patent No. 3,783,822 Dated January 8, 1974 John S. Wollam Inventor(s) It is certified that error appears in the above-identified patent and that said Letters Patent are hereby corrected as shown below:
Drawing onpage 1 and Fig. 1, should appear as shown below:
F ORM 050 (10.69) I usco r mbfib'F'IB-fiio I 1,5. GOVERNNENT PRINTlNG OFFICE: a 69 o UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION January 8, 1974 Dated Patent No. 3 7838Z2 Page 4 2 hove-identified patent It is certified that error appears in the a and that 'said Letters Patent are hereby corrected as shown below:
Figure 6, should appear as shown below:
doe
mr K;
it I
F ORM P04 050 (10-69) us coMM-oc oan-pco U45. GOVERNNENT PRINTING OFFICE 2 UNITED STATES PATENT (IFFICE CERTIFICATE OF CORRECTION Patent No. 3,783,822 Dated anuary 8, 1974 Invent0r(s) John S. Wollam Page 3 It is certified that error appears in the above identified patent and that said Letters Patent are hereby corrected as shown below:
Figure 7' should flgpear as sj g g; below:
FOIRM O-1050 (no-es) I I Z- US'COMWDC I I 0.5 cqvtnuusunpmrmsorric:1 569,930
Patent No. 3,783,822Dated ry 1 14 JohnS. Wollam Page 4 Inventor(s) It is certified that error appears in the above-identified patent and that said Letters Patent are hereby corrected as shown below:
On the cover sheet item [76] "Atcott" should readAlcott Column 1,line 59, "frequency" should readfrequent Column 4, line 20, "discs" should readdisc line 54, "hand" should readhard Column 5,line 23, "30' should read' .30"-line 26, "ends" shouldrea'd sides Column 6, line 13, "firctional" should readfrictional line 39, "qualites" should readqualities line 2, "confirmation" should readconformation Column 7 line 5-3, after "by"insert arrow 100 in line "or" should read of Column 8, line l2, delete "it". Column 10, claim l,line 66 "disc" should read discs Column 11,claim 1, line 8, after "area"insert claim 1line 24, "large" should read "larger claim 3, line 3 delete the firstoccurrenceofl'in"; same line, after "between 7insert Column 12 claim 3,line 2, "annular" should read disc claim 3,line 6, "parts" should read plate claim 3,line 7 7 after "adjacent" insert to UNITED STATES PATENT OFFICE, CERTIFICATE OF CORRECTION Patent 3,783,822 Dated January 8, 1974 JohnS. Wollam Page 5 Inventor(s) It is certified that error appears in the aboveidentified patent and that said Letters Patent are hereby corrected as shown below:
Claim 5,line 14, "15" should read 4;claim 5, line .15, I
after "housing," insert and Signed end se'aledthi s 7th day of January- 7,975.
, (SEAL) I Attest: I I I I I I MCCOY M. GIBSON JR. c. DIARSHALL DANN I Attesting Officer Commissioner of Patents v I U SCOMM-DC 60376-5 69 U45 GOVERNMENT PRINTING OFFICE a 69- 93 F ORM P04 050 (10-69)

Claims (9)

1. In apparatus for use in uniformly treating the surfaces of separate workpieces, a plurality of separate platform discs for carrying the workpieces in a treating area and means in combination therewith comprising, first and second parts on a common axis for providing first and second spaced concentric support surfaces, respectively, for the disc, each disc being large enough to span the space between said support surfaces and rest at the bottom periphery of the disc at opposite points thereof on the first and second surfaces, and means for driving one of said disc support surfaces in rotation about the common axis relative to the other support surface, whereby the discs move in an orbit about the common axis and each disc rotates on its own axis in the treating area two sets of said platform discs being provided, an inner set and an outer set, the inner set resting on the first and second disc support surfaces, a third disc support surface for the outer set of discs on said second part, a fourth disc support surface for the outer set of discs on a third part concentric with the first and second parts, and drive means coupled to said second part for producing a relative rotational motion about the common axis of the second part, relative to the first and third parts, whereby the inner set of discs moves in one orbit about the common axis, the outer set of discs moves in a large orbit about the common axis and each disc in both sets rotates on its own axis.
US00251931A1972-05-101972-05-10Apparatus for use in deposition of films from a vapor phaseExpired - LifetimeUS3783822A (en)

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Cited By (82)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4082865A (en)*1976-11-191978-04-04Rca CorporationMethod for chemical vapor deposition
US4096055A (en)*1976-12-291978-06-20Johnson Andrew GElectron microscopy coating apparatus and methods
US4100879A (en)*1977-02-081978-07-18Grigory Borisovich GoldinDevice for epitaxial growing of semiconductor periodic structures from gas phase
US4108107A (en)*1976-04-011978-08-22Airco, Inc.Rotatable substrate holder for use in vacuum
US4241698A (en)*1979-02-091980-12-30Mca Discovision, Inc.Vacuum evaporation system for the deposition of a thin evaporated layer having a high degree of uniformity
EP0026337A3 (en)*1979-09-281981-07-15International Business Machines CorporationProcess and apparatus for treating workpieces in a vacuum chamber into which a gas is introduced
US4329938A (en)*1980-10-031982-05-18The United States Of America As Represented By The Secretary Of The NavyEvaporator tool with remote substrate reorientation mechanism
US4421786A (en)*1981-01-231983-12-20Western Electric Co.Chemical vapor deposition reactor for silicon epitaxial processes
US4662310A (en)*1986-07-091987-05-05Deco Tools, Inc.Robotic paint masking machine
US4834022A (en)*1985-11-081989-05-30Focus Semiconductor Systems, Inc.CVD reactor and gas injection system
US4860687A (en)*1986-03-211989-08-29U.S. Philips CorporationDevice comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface
US4993358A (en)*1989-07-281991-02-19Watkins-Johnson CompanyChemical vapor deposition reactor and method of operation
US5002011A (en)*1987-04-141991-03-26Kabushiki Kaisha ToshibaVapor deposition apparatus
US5029555A (en)*1988-03-101991-07-09International Business Machines CorporationWafer holder method and apparatus in a vacuum deposition system
US5074246A (en)*1989-03-081991-12-24Commissariat A L'energie AtomiqueDevice to cover a flat surface with a layer of uniform thickness
US5119541A (en)*1987-01-281992-06-09Tadahiro OhmiWafer succeptor apparatus
US5152842A (en)*1991-12-051992-10-06Rohm Co., Ltd.Reactor for epitaxial growth
US5468299A (en)*1995-01-091995-11-21Tsai; Charles S.Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface
GB2291889A (en)*1994-07-271996-02-07Gec Marconi Avionics HoldingsDepositing coatings of materials on a moving substrate having a fixed orientation
US5580388A (en)*1993-01-211996-12-03Moore Epitaxial, Inc.Multi-layer susceptor for rapid thermal process reactors
GB2277748B (en)*1993-04-221997-09-24Mitsubishi Electric CorpSubstrate holder for MOCVD
US5683518A (en)*1993-01-211997-11-04Moore Epitaxial, Inc.Rapid thermal processing apparatus for processing semiconductor wafers
US5702532A (en)*1995-05-311997-12-30Hughes Aircraft CompanyMOCVD reactor system for indium antimonide epitaxial material
US5747113A (en)*1996-07-291998-05-05Tsai; Charles Su-ChangMethod of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5776256A (en)*1996-10-011998-07-07The United States Of America As Represented By The Secretary Of The Air ForceCoating chamber planetary gear mirror rotating system
US5881668A (en)*1995-11-071999-03-16Sputtered Films, Inc.System for providing a controlled deposition on wafers
US6056826A (en)*1997-07-182000-05-02Leybold Systems, GmbhVacuum coating device for coating substrates on all sides
US6472643B1 (en)*2000-03-072002-10-29Silicon Valley Group, Inc.Substrate thermal management system
US6485603B1 (en)*1999-07-012002-11-26Applied Materials, Inc.Method and apparatus for conserving energy within a process chamber
EP1271620A1 (en)*2001-06-212003-01-02Hyoung June KimMethod and apparatus for heat treatment of semiconductor films
WO2003048430A1 (en)*2001-11-272003-06-12Osram Opto Semiconductors GmbhDevice and method for producing, removing or treating layers on a substrate
US20030118724A1 (en)*2001-12-212003-06-26Lg Electronics Inc.Recording medium surface coating apparatus and method
US20030119283A1 (en)*2001-12-212003-06-26Masayuki IshibashiVapor-phase epitaxial growth method
US6634314B2 (en)*2000-08-092003-10-21Jusung Engineering Co., Ltd.Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
US6717113B2 (en)2000-03-072004-04-06Asml Holding N.V.Method for substrate thermal management
US20040182310A1 (en)*2001-07-042004-09-23Johannes KaeppelerCVD device with substrate holder with differential temperature control
US20040231599A1 (en)*2001-07-122004-11-25Markus SchwamberaProcess chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
US6837940B2 (en)*2000-12-072005-01-04E.E. Technologies Inc.Film-forming device with a substrate rotating mechanism
US20050150599A1 (en)*2004-01-082005-07-14StrasbaughDevices and methods for optical endpoint detection during semiconductor wafer polishing
US7166168B1 (en)2002-10-182007-01-23Carl Zeiss Smt AgSubstrate-coating system and an associated substrate-heating method
US20070186853A1 (en)*2006-02-102007-08-16Veeco Instruments Inc.System and method for varying wafer surface temperature via wafer-carrier temperature offset
US20070266932A1 (en)*2006-05-182007-11-22Kabushiki Kaisha ToshibaVapor phase growth apparatus and method for vapor phase growth
US20080079220A1 (en)*2006-08-292008-04-03Aviza Technology, Inc.Rotary seal for diffusion furnance incorporating nonmetallic seals
US20080111927A1 (en)*2006-11-092008-05-15International Business Machines CorporationDevice and system for reflective digital light processing (dlp)
US20080152803A1 (en)*2005-02-172008-06-26Franck LamourouxMethod For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
US20080308040A1 (en)*2005-11-252008-12-18Martin DauelsbergCvd Reactor Comprising a Gas Inlet Member
US20100012034A1 (en)*2003-04-302010-01-21Gerhard Karl StrauchProcess And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned
US20100037827A1 (en)*2001-07-042010-02-18Johannes KaeppelerCVD Device with Substrate Holder with Differential Temperature Control
WO2011044412A1 (en)2009-10-092011-04-14Cree, Inc.Multi-rotation epitaxial growth apparatus and reactors incorporating same
US20110126985A1 (en)*2009-12-022011-06-02Tokyo Electron LimitedSubstrate processing apparatus
US20110215071A1 (en)*2010-03-032011-09-08Veeco Instruments Inc.Wafer carrier with sloped edge
US20110308456A1 (en)*2010-06-212011-12-22Hon Hai Precision Industry Co., Ltd.Coating apparatus
WO2011138703A3 (en)*2010-05-032012-01-12Memc Electronic Materials, Inc.Wafer support ring
US20120048187A1 (en)*2010-08-272012-03-01Hon Hai Precision Industry Co., Ltd.Coating holder and coating device having same
CN102383103A (en)*2010-08-302012-03-21鸿富锦精密工业(深圳)有限公司Film coating bearing device and optical film coating equipment having same
US20120160170A1 (en)*2009-07-152012-06-28Taiyo Nippon Sanso CorporationVapor phase growth apparatus
US20130171350A1 (en)*2011-12-292013-07-04Intermolecular Inc.High Throughput Processing Using Metal Organic Chemical Vapor Deposition
CN103730395A (en)*2012-10-112014-04-16晶元光电股份有限公司Wafer carrier
US20150037499A1 (en)*2013-08-012015-02-05Solid State Equipment LlcApparatus for dual speed spin chuck
US20150053136A1 (en)*2013-08-232015-02-26Taiwan Semiconductor Manufacturing Co., Ltd.Vertical Furnace for Improving Wafer Uniformity
US20160244878A1 (en)*2015-02-252016-08-25Hitachi Kokusai Electric Inc.Substrate processing apparatus and heating unit
USD778247S1 (en)*2015-04-162017-02-07Veeco Instruments Inc.Wafer carrier with a multi-pocket configuration
US20170076972A1 (en)*2015-09-152017-03-16Veeco Instruments Inc.Planetary wafer carriers
USD793972S1 (en)2015-03-272017-08-08Veeco Instruments Inc.Wafer carrier with a 31-pocket configuration
USD793971S1 (en)2015-03-272017-08-08Veeco Instruments Inc.Wafer carrier with a 14-pocket configuration
CN103094424B (en)*2011-10-312017-09-22晶元光电股份有限公司Wafer carrier
US10221480B2 (en)*2015-09-082019-03-05Tokyo Electron LimitedSubstrate processing apparatus and substrate processing method
USD854506S1 (en)*2018-03-262019-07-23Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en)*2018-03-262019-09-03Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD860146S1 (en)*2017-11-302019-09-17Veeco Instruments Inc.Wafer carrier with a 33-pocket configuration
USD860147S1 (en)*2018-03-262019-09-17Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
US10428425B2 (en)*2016-01-262019-10-01Tokyo Electron LimitedFilm deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
USD863239S1 (en)*2018-03-262019-10-15Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD866491S1 (en)*2018-03-262019-11-12Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
WO2021055768A1 (en)*2019-09-192021-03-25Applied Materials, Inc.Apparatus and methods for motor shaft and heater leveling
US20210214845A1 (en)*2020-01-152021-07-15Tokyo Electron LimitedSubstrate processing apparatus and rotary drive method
EP3540093B1 (en)*2016-11-302022-01-05Jiangsu Favored Nanotechnology Co., LtdPlanetary rotary shelf device for nano-coating apparatus
US11248295B2 (en)2014-01-272022-02-15Veeco Instruments Inc.Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
US20220130712A1 (en)*2020-10-282022-04-28Tokyo Electron LimitedSubstrate processing apparatus
US11339478B2 (en)*2016-09-192022-05-24King Abdullah University Of Science And TechnologySusceptor
WO2025049557A1 (en)2023-08-302025-03-06Dow Global Technologies LlcMethods for separating hydrogen and carbon-containing compounds
WO2025049560A1 (en)2023-08-302025-03-06Dow Global Technologies LlcMethods for separating hydrogen and carbon-containing compounds

Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3424628A (en)*1966-01-241969-01-28Western Electric CoMethods and apparatus for treating semi-conductive materials with gases
US3436255A (en)*1965-07-061969-04-01Monsanto CoElectric resistance heaters
US3523517A (en)*1968-09-041970-08-11Sloan Instr CorpRotating workpiece holder
US3594227A (en)*1968-07-121971-07-20Bell Telephone Labor IncMethod for treating semiconductor slices with gases
US3608519A (en)*1968-12-311971-09-28Texas Instruments IncDeposition reactor
US3633537A (en)*1970-07-061972-01-11Gen Motors CorpVapor deposition apparatus with planetary susceptor
US3675624A (en)*1970-08-061972-07-11Singer CoApparatus for rotating work for thin film deposition

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3436255A (en)*1965-07-061969-04-01Monsanto CoElectric resistance heaters
US3424628A (en)*1966-01-241969-01-28Western Electric CoMethods and apparatus for treating semi-conductive materials with gases
US3594227A (en)*1968-07-121971-07-20Bell Telephone Labor IncMethod for treating semiconductor slices with gases
US3523517A (en)*1968-09-041970-08-11Sloan Instr CorpRotating workpiece holder
US3608519A (en)*1968-12-311971-09-28Texas Instruments IncDeposition reactor
US3633537A (en)*1970-07-061972-01-11Gen Motors CorpVapor deposition apparatus with planetary susceptor
US3675624A (en)*1970-08-061972-07-11Singer CoApparatus for rotating work for thin film deposition

Cited By (112)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4108107A (en)*1976-04-011978-08-22Airco, Inc.Rotatable substrate holder for use in vacuum
US4082865A (en)*1976-11-191978-04-04Rca CorporationMethod for chemical vapor deposition
US4096055A (en)*1976-12-291978-06-20Johnson Andrew GElectron microscopy coating apparatus and methods
US4100879A (en)*1977-02-081978-07-18Grigory Borisovich GoldinDevice for epitaxial growing of semiconductor periodic structures from gas phase
US4241698A (en)*1979-02-091980-12-30Mca Discovision, Inc.Vacuum evaporation system for the deposition of a thin evaporated layer having a high degree of uniformity
EP0026337A3 (en)*1979-09-281981-07-15International Business Machines CorporationProcess and apparatus for treating workpieces in a vacuum chamber into which a gas is introduced
US4329938A (en)*1980-10-031982-05-18The United States Of America As Represented By The Secretary Of The NavyEvaporator tool with remote substrate reorientation mechanism
US4421786A (en)*1981-01-231983-12-20Western Electric Co.Chemical vapor deposition reactor for silicon epitaxial processes
US4834022A (en)*1985-11-081989-05-30Focus Semiconductor Systems, Inc.CVD reactor and gas injection system
US4860687A (en)*1986-03-211989-08-29U.S. Philips CorporationDevice comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface
US4662310A (en)*1986-07-091987-05-05Deco Tools, Inc.Robotic paint masking machine
US5119541A (en)*1987-01-281992-06-09Tadahiro OhmiWafer succeptor apparatus
US5002011A (en)*1987-04-141991-03-26Kabushiki Kaisha ToshibaVapor deposition apparatus
US5029555A (en)*1988-03-101991-07-09International Business Machines CorporationWafer holder method and apparatus in a vacuum deposition system
US5074246A (en)*1989-03-081991-12-24Commissariat A L'energie AtomiqueDevice to cover a flat surface with a layer of uniform thickness
US4993358A (en)*1989-07-281991-02-19Watkins-Johnson CompanyChemical vapor deposition reactor and method of operation
US5152842A (en)*1991-12-051992-10-06Rohm Co., Ltd.Reactor for epitaxial growth
US6310327B1 (en)1993-01-212001-10-30Moore Epitaxial Inc.Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en)*1993-01-211996-12-03Moore Epitaxial, Inc.Multi-layer susceptor for rapid thermal process reactors
US5683518A (en)*1993-01-211997-11-04Moore Epitaxial, Inc.Rapid thermal processing apparatus for processing semiconductor wafers
US5710407A (en)*1993-01-211998-01-20Moore Epitaxial, Inc.Rapid thermal processing apparatus for processing semiconductor wafers
US6151447A (en)*1993-01-212000-11-21Moore TechnologiesRapid thermal processing apparatus for processing semiconductor wafers
US5782979A (en)*1993-04-221998-07-21Mitsubishi Denki Kabushiki KaishaSubstrate holder for MOCVD
GB2277748B (en)*1993-04-221997-09-24Mitsubishi Electric CorpSubstrate holder for MOCVD
GB2291889A (en)*1994-07-271996-02-07Gec Marconi Avionics HoldingsDepositing coatings of materials on a moving substrate having a fixed orientation
GB2291889B (en)*1994-07-271998-02-25Gec Marconi Avionics HoldingsDepositing coatings of materials on a substrate
US5468299A (en)*1995-01-091995-11-21Tsai; Charles S.Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface
US5702532A (en)*1995-05-311997-12-30Hughes Aircraft CompanyMOCVD reactor system for indium antimonide epitaxial material
US5881668A (en)*1995-11-071999-03-16Sputtered Films, Inc.System for providing a controlled deposition on wafers
US5747113A (en)*1996-07-291998-05-05Tsai; Charles Su-ChangMethod of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5776256A (en)*1996-10-011998-07-07The United States Of America As Represented By The Secretary Of The Air ForceCoating chamber planetary gear mirror rotating system
US6056826A (en)*1997-07-182000-05-02Leybold Systems, GmbhVacuum coating device for coating substrates on all sides
US6485603B1 (en)*1999-07-012002-11-26Applied Materials, Inc.Method and apparatus for conserving energy within a process chamber
US6472643B1 (en)*2000-03-072002-10-29Silicon Valley Group, Inc.Substrate thermal management system
US6717113B2 (en)2000-03-072004-04-06Asml Holding N.V.Method for substrate thermal management
US6634314B2 (en)*2000-08-092003-10-21Jusung Engineering Co., Ltd.Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
US20040035362A1 (en)*2000-08-092004-02-26Chul-Ju HwangAtomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
US6872421B2 (en)2000-08-092005-03-29Jusung Engineering Co., LtdAtomic layer deposition method
US6837940B2 (en)*2000-12-072005-01-04E.E. Technologies Inc.Film-forming device with a substrate rotating mechanism
EP1271620A1 (en)*2001-06-212003-01-02Hyoung June KimMethod and apparatus for heat treatment of semiconductor films
US20040182310A1 (en)*2001-07-042004-09-23Johannes KaeppelerCVD device with substrate holder with differential temperature control
US20100037827A1 (en)*2001-07-042010-02-18Johannes KaeppelerCVD Device with Substrate Holder with Differential Temperature Control
US20040231599A1 (en)*2001-07-122004-11-25Markus SchwamberaProcess chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
WO2003048430A1 (en)*2001-11-272003-06-12Osram Opto Semiconductors GmbhDevice and method for producing, removing or treating layers on a substrate
US20030118724A1 (en)*2001-12-212003-06-26Lg Electronics Inc.Recording medium surface coating apparatus and method
US20030119283A1 (en)*2001-12-212003-06-26Masayuki IshibashiVapor-phase epitaxial growth method
US6971835B2 (en)*2001-12-212005-12-06Sumitomo Mitsubishi Silicon CorporationVapor-phase epitaxial growth method
US7166168B1 (en)2002-10-182007-01-23Carl Zeiss Smt AgSubstrate-coating system and an associated substrate-heating method
US20100012034A1 (en)*2003-04-302010-01-21Gerhard Karl StrauchProcess And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned
US20050150599A1 (en)*2004-01-082005-07-14StrasbaughDevices and methods for optical endpoint detection during semiconductor wafer polishing
US20080152803A1 (en)*2005-02-172008-06-26Franck LamourouxMethod For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
US8491963B2 (en)2005-02-172013-07-23Snecma Propulsion SolideMethod of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
US8163088B2 (en)*2005-02-172012-04-24Snecma Propulsion SolideMethod of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
US20080308040A1 (en)*2005-11-252008-12-18Martin DauelsbergCvd Reactor Comprising a Gas Inlet Member
US8152924B2 (en)*2005-11-252012-04-10Aixtron Inc.CVD reactor comprising a gas inlet member
US20070186853A1 (en)*2006-02-102007-08-16Veeco Instruments Inc.System and method for varying wafer surface temperature via wafer-carrier temperature offset
US8603248B2 (en)2006-02-102013-12-10Veeco Instruments Inc.System and method for varying wafer surface temperature via wafer-carrier temperature offset
US20070266932A1 (en)*2006-05-182007-11-22Kabushiki Kaisha ToshibaVapor phase growth apparatus and method for vapor phase growth
US20080079220A1 (en)*2006-08-292008-04-03Aviza Technology, Inc.Rotary seal for diffusion furnance incorporating nonmetallic seals
US20080111927A1 (en)*2006-11-092008-05-15International Business Machines CorporationDevice and system for reflective digital light processing (dlp)
US20120160170A1 (en)*2009-07-152012-06-28Taiyo Nippon Sanso CorporationVapor phase growth apparatus
WO2011044412A1 (en)2009-10-092011-04-14Cree, Inc.Multi-rotation epitaxial growth apparatus and reactors incorporating same
CN102639761A (en)*2009-10-092012-08-15克里公司Multi-rotation epitaxial growth apparatus and reactors incorporating same
US9637822B2 (en)2009-10-092017-05-02Cree, Inc.Multi-rotation epitaxial growth apparatus and reactors incorporating same
US20110126985A1 (en)*2009-12-022011-06-02Tokyo Electron LimitedSubstrate processing apparatus
US8845857B2 (en)*2009-12-022014-09-30Tokyo Electron LimitedSubstrate processing apparatus
US8888919B2 (en)*2010-03-032014-11-18Veeco Instruments Inc.Wafer carrier with sloped edge
US20110215071A1 (en)*2010-03-032011-09-08Veeco Instruments Inc.Wafer carrier with sloped edge
WO2011138703A3 (en)*2010-05-032012-01-12Memc Electronic Materials, Inc.Wafer support ring
US8420554B2 (en)2010-05-032013-04-16Memc Electronic Materials, Inc.Wafer support ring
US20110308456A1 (en)*2010-06-212011-12-22Hon Hai Precision Industry Co., Ltd.Coating apparatus
TWI452168B (en)*2010-06-212014-09-11Hon Hai Prec Ind Co LtdPlasma coating device
US8535446B2 (en)*2010-08-272013-09-17Hon Hai Precision Industry Co., Ltd.Coating holder and coating device having same
US20120048187A1 (en)*2010-08-272012-03-01Hon Hai Precision Industry Co., Ltd.Coating holder and coating device having same
CN102383103A (en)*2010-08-302012-03-21鸿富锦精密工业(深圳)有限公司Film coating bearing device and optical film coating equipment having same
CN103094424B (en)*2011-10-312017-09-22晶元光电股份有限公司Wafer carrier
US20130171350A1 (en)*2011-12-292013-07-04Intermolecular Inc.High Throughput Processing Using Metal Organic Chemical Vapor Deposition
TWI557842B (en)*2012-10-112016-11-11晶元光電股份有限公司Wafer carrier
US20140102372A1 (en)*2012-10-112014-04-17Epistar CorporationWafer carrier
CN103730395A (en)*2012-10-112014-04-16晶元光电股份有限公司Wafer carrier
CN103730395B (en)*2012-10-112018-02-13晶元光电股份有限公司 wafer carrier
US20150037499A1 (en)*2013-08-012015-02-05Solid State Equipment LlcApparatus for dual speed spin chuck
US10022745B2 (en)*2013-08-012018-07-17Veeco Precision Surface Processing LlcApparatus for dual speed spin chuck
US20150053136A1 (en)*2013-08-232015-02-26Taiwan Semiconductor Manufacturing Co., Ltd.Vertical Furnace for Improving Wafer Uniformity
US9605345B2 (en)*2013-08-232017-03-28Taiwan Semiconductor Manufacturing Co., Ltd.Vertical furnace for improving wafer uniformity
US11248295B2 (en)2014-01-272022-02-15Veeco Instruments Inc.Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
US20160244878A1 (en)*2015-02-252016-08-25Hitachi Kokusai Electric Inc.Substrate processing apparatus and heating unit
US9957616B2 (en)*2015-02-252018-05-01Hitachi Kokusai Electric Inc.Substrate processing apparatus and heating unit
USD793972S1 (en)2015-03-272017-08-08Veeco Instruments Inc.Wafer carrier with a 31-pocket configuration
USD793971S1 (en)2015-03-272017-08-08Veeco Instruments Inc.Wafer carrier with a 14-pocket configuration
USD852762S1 (en)2015-03-272019-07-02Veeco Instruments Inc.Wafer carrier with a 14-pocket configuration
USD806046S1 (en)2015-04-162017-12-26Veeco Instruments Inc.Wafer carrier with a multi-pocket configuration
USD778247S1 (en)*2015-04-162017-02-07Veeco Instruments Inc.Wafer carrier with a multi-pocket configuration
US10221480B2 (en)*2015-09-082019-03-05Tokyo Electron LimitedSubstrate processing apparatus and substrate processing method
US20170076972A1 (en)*2015-09-152017-03-16Veeco Instruments Inc.Planetary wafer carriers
US10428425B2 (en)*2016-01-262019-10-01Tokyo Electron LimitedFilm deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
US11339478B2 (en)*2016-09-192022-05-24King Abdullah University Of Science And TechnologySusceptor
EP3540093B1 (en)*2016-11-302022-01-05Jiangsu Favored Nanotechnology Co., LtdPlanetary rotary shelf device for nano-coating apparatus
USD860146S1 (en)*2017-11-302019-09-17Veeco Instruments Inc.Wafer carrier with a 33-pocket configuration
USD854506S1 (en)*2018-03-262019-07-23Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD866491S1 (en)*2018-03-262019-11-12Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en)*2018-03-262019-10-15Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en)*2018-03-262019-09-17Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en)*2018-03-262019-09-03Veeco Instruments Inc.Chemical vapor deposition wafer carrier with thermal cover
WO2021055768A1 (en)*2019-09-192021-03-25Applied Materials, Inc.Apparatus and methods for motor shaft and heater leveling
US12018376B2 (en)2019-09-192024-06-25Applied Materials, Inc.Apparatus and methods for motor shaft and heater leveling
US20210214845A1 (en)*2020-01-152021-07-15Tokyo Electron LimitedSubstrate processing apparatus and rotary drive method
US20220130712A1 (en)*2020-10-282022-04-28Tokyo Electron LimitedSubstrate processing apparatus
KR20220056797A (en)*2020-10-282022-05-06도쿄엘렉트론가부시키가이샤Substrate processing apparatus
US12255092B2 (en)*2020-10-282025-03-18Tokyo Electron LimitedSubstrate processing apparatus
WO2025049557A1 (en)2023-08-302025-03-06Dow Global Technologies LlcMethods for separating hydrogen and carbon-containing compounds
WO2025049560A1 (en)2023-08-302025-03-06Dow Global Technologies LlcMethods for separating hydrogen and carbon-containing compounds

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