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US3504457A - Polishing apparatus - Google Patents

Polishing apparatus
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US3504457A
US3504457AUS562757AUS3504457DAUS3504457AUS 3504457 AUS3504457 AUS 3504457AUS 562757 AUS562757 AUS 562757AUS 3504457D AUS3504457D AUS 3504457DAUS 3504457 AUS3504457 AUS 3504457A
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polishing
corfam
layer
porous
organization
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US562757A
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Hans R Jacobsen
Elmer W Jensen
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Geoscience Instruments Corp
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Geoscience Instruments Corp
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April 7, 1970 H, R, JACOBSEN ET AL 3,504,457
POLISHING APPARATUS Filed July 5, 1966 40W iy//5/ BEAR/NG CON 754C 7' (IRG/N6 MF4/V5 INVENTORS HANS REM/#0107' .fS/V B52/.MER M JENSEN 2@ @Mge ys.
United States Patent O York Filed July 5, 1966, Ser. No. 562,757 Int. Cl. B24b 5/00, 29/00, 11/00 U.S. Cl. 51-131 4 Claims ABSTRACT OF THE DISCLOSURE A device for polishing semiconductor wafers wherein the polishing tool comprises a poromeric material of polyurethane reinforced with a polyester and with a polishing slurry thereon is urged into contact with the workpiece.
This invention relates to an apparatus for processing workpieces and, more specifically for imparting a polished finish to elements subjected thereto.
Many applications of present day interest require thin, fragile semiconductor wafers having a highly polished critical surface. To produce such a finish, prior art organizations have rotated such semiconductor elements against a lapping substrate in the presence of a polishing slurry.
The surface of the lapping plate in contact with the semiconductor elements has typically included thereon -as the active polishing member a pitch composition, papers, pseudo papers or other nonwovens, or felt substances. However, the above and other prior art operative polishing surfaces are characterized by at least several of the following deficiencies: (1) temperature sensitivity, and therefore instability at high polishing rates; (2) unhomogeneous consistency; (3) a propensity to pick up and retain foreign elements; (4) poor wear characteristics requiring frequent replacement; (5) variations from sample to sample; (6) the characteristics of being impermeable, and thereby preventing a polishing slurry from reaching all surface areas of a product being operated upon; (7) relatively little tensile strength, thereby being subject to distortion; and (8) a resistance to bonding, thereby being difiicult to affix to cooperating compositions and/or a lapping plate.
It is therefore an object of the present invention to provide an improved apparatus for polishing workpieces.
More specifically, an object of the present invention is the provision of a resilient, homogeneous polishing organization which is porous, relatively insensitive to temperature, and which may be fabricated with little variation from sample to sample.
These and other objects of the present invention are realized in a specific illustrative polishing organization which comprises a layer of Corfam (a trademark of the Du Pont Corporation for a poromeric material) afiixed to a lapping substrate via layers of an adhesive, chemically inert nitrile rubber, and a pressure sensitive, clean release adhesive. A pororneric material, such as Du Ponts Corfam, comprises polyurethane reinforced with polyester. In this regard see, for example, Chemistry of Organic Compounds by C. R. Noller, published by W. B. Saunders Company in 1965, at chapter 36.
The active, or free Corfam surface is adapted to be fiat such that the surface of the work elements brought into rotational bearing contact therewith will be polished, i.e., will be rendered flat. In an alternative embodiment of the present invention a porous film e.g., of foam polyurethane, is attached to the Corfam to function as the active polishing surface.
A complete understanding of the present invention and of the above and other objects thereof may be gained 3,504,457 Patented Apr. 7, 1970 from a consideration of an illustrative embodiment thereof depicted in the accompanying drawing.
Referring now to the drawing, there is shown in crosssectional form an illustrative polishing organization which embodies the principles of the present invention. The arrangement includes a layer of Corfam 20 which has alayer 35 of a, chemically inert material, eg., nitrile rubber, afiixed thereto by an adhesive 30. Alayer 40` of a pressure sensitive, clean release adhesive 40 is bonded to the bottom of thenitrile rubber layer 35 for purposes of facilitating the attachment and removal of the composite polishing laminated structure with respect to ametal lapping substrate 45. It is noted that other poromeric materials, as well as other compositions embodying the attributes of Corfam described herein, may be employed in place of the Corfamlayer 20.
The Corfamlayer 20 is fabricated such that the upper surface thereof exhibits the requisite flatness required for a particular polishing operation (assuming that a fiat surface is desired for the workpiece), Employing such alayer 20,thelapping substrate 45 is urged into a bearing pressure contact withelements 15 to be polished.Such elements 15 may comprise, for example, semiconductor wafers, with these elements being shown in the drawing as mounted on a rotatingmounting block 10. Further, the polishing operation may advantageously take place in a polishing liquid slurry environment, with the slurry being supplied by aslurry source 50 via anozzle 51.
The Corfammaterial 20 is very porous, and hence the slurry is translated by thelayer 20 to all portions of the surface of theelements 15 thereby effecting uniform polishing. Also, the Corfammaterial 20 is essentially insensitive to temperature, at least in the temperature range of interest for polishing operations. Accordingly, polishing may be accomplished at high rates of speed. Further, thelayer 20 is homogeneous, and may be fabricated in relatively large quantities to produce many uniform polishing layers without material variation from element to element.
Moreover, Corfam is resilient and prevents damage toelements 15 being polished by absorbing mechanical vibrations and any compaction caused by overshoot of themounting members 10 or 45. In addition, thelayer 20 is durable which is beneficial from maintenance and batch processing rate standpoints.
Still further, the active, upper surface of the Corfamlayer 20 can be treated or impregnated when required for special polishing operations. Such treatment may comprise, for example, brushing, napping, skiving or texturing the polishing Corfam surface to increase the number for active polishing fibers, or calendering the surface to increase its atness.
The composite laminated polishing organization 20-30- 35-40 is easily attached to, and removed from thelapping substrate 45 by reason of the properties of the pressure sensitive, clean releaseadhesive layer 40. Theinert layer 35 is employed to insulate theadhesive 40 from the layers thereabove, and also from the slurry which would otherwise reach the adhesive I40 through the porous Corfamlayer 20. Such lforeign substances would tend to change the physical state of the adhesive 40, e.g., harden it thereby making attachment to and removal from theplate 45 more difficult.
By way of -functional operation, when rotational bearing contact is established between the Corfam upper surface and thelwork pieces 15, the desired polishing surface is imparted to the lower, critical surface of these elements. Hence, the desired polishing is accomplished.
In an alternative embodiment of the invention aporous film 23, e.g., of foam polyurethane, is afiixed to the upper surface of the Corfamlayer 20 by aporous adhesive 25. In such an arrangement, the upper face of thefilm 23 is the effective polishing surface, with the Corfambacking layer 20 providing resiliency and strength, while maintaining a composite porous organization which is desirable in a polishing organization for the reasons given hereinabove. Thus it is noted that compositions 4which are porous only in film thicknesses, but which otherwise have desirable polishing properties, may be used as a polishing surface when mounted on a Corfambacking layer 20.
Thus, the organization shown in the drawing, both with and without thefilm 23 and theadhesive 25, has been shown by the above to function as a very desirable polishing structure.
1t is to be understood that the above described method and organizations are only illustrative of the application of the principles of the present inventions. Numerous other arrangements and modes of operation may be devised by those skilled in the art without departing from the spirit and scope of this invention. For example, the active polishing surface, i.e., the upper surface of the Corfam 20 or thelm 23 if such a lm is employed, may exhibit a geometry other than a at plane -when a nonat work piece of a corresponding geometry is to be polished. In addition, other known bonding mechanisms, such as mechanical interlocking or distortion, may be used to fabricate the composite laminated polishing structure shown in the drawing vwithout the use of theadhesives 25 and 30.
We claim:
1. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous film axed to said poromeric material, wherein said poromeric material has rst and second surfaces, said rst surface engaging said porous hlm, and further comprising an inert layer of nitrile rubber I affixed to said second surface of said Corfam.
plate, and means for selectively urging work pieces to be polished into a bearing relationship with said lapping plate.
3. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous hlm aixed to said poromeric material, Iwherein said porous lm is polyurethane, and means for selectively urging work pieces to be polished into bearing contact with said porous film.
4. In combination in a polishing organization, a lapping substrate, a poromeric layer comprising polyurethane reinforced with polyester mounted on said substrate, said poromeric layer including a polishing surface thereon, and means for urging work pieces to be polished into bearing contact with said poromeric polishing surface.
References Cited UNITED STATES PATENTS 2,644,280 7 l 95 3 ONeil 51-406 3,050,909 8/ 1962 Rawstron 51-124 3,082,582 3/1963 Jeske 51-407 X 3,123,953 3/1964 Merkl 51-283 3,360,889 1/1968 Borish 51-131 X 671,130 4/1901 Darden 51-401 804,853 11/1905 Ireson. 1,923,719 8/1933 Fuller 51-301 X 2,650,158 8/1953 Eastman 51-407 X FOREIGN PATENTS 681,832 3/1964 Canada.
OTHER REFERENCES Boot and 'Shoe Recorder, Oct. l, 1963, article titled The Story of Corfam pages 1-2 thereof.
HAROLD D. WHITEHEAD, Primary Examiner U.'S. C1. XR.
US562757A1966-07-051966-07-05Polishing apparatusExpired - LifetimeUS3504457A (en)

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Cited By (50)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3841031A (en)*1970-10-211974-10-15Monsanto CoProcess for polishing thin elements
US3857123A (en)*1970-10-211974-12-31Monsanto CoApparatus for waxless polishing of thin wafers
US3947953A (en)*1974-08-231976-04-06Nitto Electric Industrial Co., Ltd.Method of making plastic sealed cavity molded type semi-conductor devices
US4728552A (en)*1984-07-061988-03-01Rodel, Inc.Substrate containing fibers of predetermined orientation and process of making the same
US4841680A (en)*1987-08-251989-06-27Rodel, Inc.Inverted cell pad material for grinding, lapping, shaping and polishing
EP0304645A3 (en)*1987-08-251990-01-24Rodel, Inc.Inverted cell pad material for grinding, lapping, shaping and polishing
US4927432A (en)*1986-03-251990-05-22Rodel, Inc.Pad material for grinding, lapping and polishing
US4954141A (en)*1988-01-281990-09-04Showa Denko Kabushiki KaishaPolishing pad for semiconductor wafers
EP0291100A3 (en)*1987-05-151990-12-19Asahi Kasei Kogyo Kabushiki KaishaPolishing cloth
WO1991014538A1 (en)*1990-03-221991-10-03Westech Systems, Inc.Apparatus for interlayer planarization of semiconductor material
US5257478A (en)*1990-03-221993-11-02Rodel, Inc.Apparatus for interlayer planarization of semiconductor material
US5403228A (en)*1992-07-101995-04-04Lsi Logic CorporationTechniques for assembling polishing pads for silicon wafer polishing
US5510175A (en)*1993-06-301996-04-23Chiyoda Co., Ltd.Polishing cloth
US5618227A (en)*1992-09-181997-04-08Mitsubushi Materials CorporationApparatus for polishing wafer
US5649855A (en)*1995-01-251997-07-22Nec CorporationWafer polishing device
US5664989A (en)*1995-07-211997-09-09Kabushiki Kaisha ToshibaPolishing pad, polishing apparatus and polishing method
US5692950A (en)*1996-08-081997-12-02Minnesota Mining And Manufacturing CompanyAbrasive construction for semiconductor wafer modification
US5769699A (en)*1993-04-301998-06-23Motorola, Inc.Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5846335A (en)*1994-06-281998-12-08Ebara CorporationMethod for cleaning workpiece
US5913712A (en)*1995-08-091999-06-22Cypress Semiconductor Corp.Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing
US6036579A (en)*1997-01-132000-03-14Rodel Inc.Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto
US6095902A (en)*1998-09-232000-08-01Rodel Holdings, Inc.Polyether-polyester polyurethane polishing pads and related methods
US6238592B1 (en)1999-03-102001-05-293M Innovative Properties CompanyWorking liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6284114B1 (en)1997-09-292001-09-04Rodel Holdings Inc.Method of fabricating a porous polymeric material by electrophoretic deposition
US6336845B1 (en)1997-11-122002-01-08Lam Research CorporationMethod and apparatus for polishing semiconductor wafers
US20020081956A1 (en)*2000-09-082002-06-27Applied Materials, Inc.Carrier head with vibration dampening
US6431959B1 (en)1999-12-202002-08-13Lam Research CorporationSystem and method of defect optimization for chemical mechanical planarization of polysilicon
US20020127862A1 (en)*2001-03-082002-09-12Cooper Richard D.Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same
EP1295680A3 (en)*2001-09-252003-09-10JSR CorporationPolishing pad for semiconductor wafer
US6626740B2 (en)1999-12-232003-09-30Rodel Holdings, Inc.Self-leveling pads and methods relating thereto
US20040055223A1 (en)*2000-12-012004-03-25Koichi OnoPolishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad
US20040072522A1 (en)*2002-06-182004-04-15Angela PetroskiGradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers
US6746311B1 (en)*2000-01-242004-06-083M Innovative Properties CompanyPolishing pad with release layer
US20040142637A1 (en)*2003-01-222004-07-22Angela PetroskiPolishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20040142638A1 (en)*2003-01-222004-07-22Angela PetroskiPolishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same
US20040259484A1 (en)*2003-06-172004-12-23Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US20050098446A1 (en)*2003-10-032005-05-12Applied Materials, Inc.Multi-layer polishing pad
US20050197050A1 (en)*2003-06-172005-09-08Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US20050221723A1 (en)*2003-10-032005-10-06Applied Materials, Inc.Multi-layer polishing pad for low-pressure polishing
US20050245181A1 (en)*2000-09-082005-11-03Applied Materials, Inc.Vibration damping during chemical mechanical polishing
US20060046622A1 (en)*2004-09-012006-03-02Cabot Microelectronics CorporationPolishing pad with microporous regions
US20060148387A1 (en)*2000-09-082006-07-06Applied Materials, Inc., A Delaware CorporationVibration damping in chemical mechanical polishing system
US20070049169A1 (en)*2005-08-022007-03-01Vaidya Neha PNonwoven polishing pads for chemical mechanical polishing
US20070087177A1 (en)*2003-10-092007-04-19Guangwei WuStacked pad and method of use
US7618529B2 (en)2004-05-252009-11-17Rohm And Haas Electronic Materials Cmp Holdings, IncPolishing pad for electrochemical mechanical polishing
US20110045753A1 (en)*2008-05-162011-02-24Toray Industries, Inc.Polishing pad
US20110269380A1 (en)*2010-05-032011-11-03Iv Technologies Co., Ltd.Base layer, polishing pad including the same and polishing method
US8092707B2 (en)1997-04-302012-01-103M Innovative Properties CompanyCompositions and methods for modifying a surface suited for semiconductor fabrication
JP2016064453A (en)*2014-09-242016-04-28株式会社ディスコProcessing device and wafer processing method
US9960048B2 (en)2013-02-132018-05-01Showa Denko K.K.Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

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Cited By (83)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US3841031A (en)*1970-10-211974-10-15Monsanto CoProcess for polishing thin elements
US3857123A (en)*1970-10-211974-12-31Monsanto CoApparatus for waxless polishing of thin wafers
US3947953A (en)*1974-08-231976-04-06Nitto Electric Industrial Co., Ltd.Method of making plastic sealed cavity molded type semi-conductor devices
US4728552A (en)*1984-07-061988-03-01Rodel, Inc.Substrate containing fibers of predetermined orientation and process of making the same
US4927432A (en)*1986-03-251990-05-22Rodel, Inc.Pad material for grinding, lapping and polishing
EP0291100A3 (en)*1987-05-151990-12-19Asahi Kasei Kogyo Kabushiki KaishaPolishing cloth
US4841680A (en)*1987-08-251989-06-27Rodel, Inc.Inverted cell pad material for grinding, lapping, shaping and polishing
EP0304645A3 (en)*1987-08-251990-01-24Rodel, Inc.Inverted cell pad material for grinding, lapping, shaping and polishing
US4954141A (en)*1988-01-281990-09-04Showa Denko Kabushiki KaishaPolishing pad for semiconductor wafers
US5257478A (en)*1990-03-221993-11-02Rodel, Inc.Apparatus for interlayer planarization of semiconductor material
WO1991014538A1 (en)*1990-03-221991-10-03Westech Systems, Inc.Apparatus for interlayer planarization of semiconductor material
EP0555660A3 (en)*1992-01-311994-03-23Westech Inc
US5403228A (en)*1992-07-101995-04-04Lsi Logic CorporationTechniques for assembling polishing pads for silicon wafer polishing
US5618227A (en)*1992-09-181997-04-08Mitsubushi Materials CorporationApparatus for polishing wafer
US5769699A (en)*1993-04-301998-06-23Motorola, Inc.Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5510175A (en)*1993-06-301996-04-23Chiyoda Co., Ltd.Polishing cloth
US5846335A (en)*1994-06-281998-12-08Ebara CorporationMethod for cleaning workpiece
US5649855A (en)*1995-01-251997-07-22Nec CorporationWafer polishing device
US5664989A (en)*1995-07-211997-09-09Kabushiki Kaisha ToshibaPolishing pad, polishing apparatus and polishing method
US5913712A (en)*1995-08-091999-06-22Cypress Semiconductor Corp.Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing
US5692950A (en)*1996-08-081997-12-02Minnesota Mining And Manufacturing CompanyAbrasive construction for semiconductor wafer modification
US6007407A (en)*1996-08-081999-12-28Minnesota Mining And Manufacturing CompanyAbrasive construction for semiconductor wafer modification
US6036579A (en)*1997-01-132000-03-14Rodel Inc.Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto
US6210254B1 (en)*1997-01-132001-04-03Rodel Holdings Inc.Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern(s)
US8092707B2 (en)1997-04-302012-01-103M Innovative Properties CompanyCompositions and methods for modifying a surface suited for semiconductor fabrication
US6284114B1 (en)1997-09-292001-09-04Rodel Holdings Inc.Method of fabricating a porous polymeric material by electrophoretic deposition
US6336845B1 (en)1997-11-122002-01-08Lam Research CorporationMethod and apparatus for polishing semiconductor wafers
US6416385B2 (en)1997-11-122002-07-09Lam Research CorporationMethod and apparatus for polishing semiconductor wafers
US6517418B2 (en)1997-11-122003-02-11Lam Research CorporationMethod of transporting a semiconductor wafer in a wafer polishing system
US6095902A (en)*1998-09-232000-08-01Rodel Holdings, Inc.Polyether-polyester polyurethane polishing pads and related methods
US6238592B1 (en)1999-03-102001-05-293M Innovative Properties CompanyWorking liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6431959B1 (en)1999-12-202002-08-13Lam Research CorporationSystem and method of defect optimization for chemical mechanical planarization of polysilicon
US20030060126A1 (en)*1999-12-202003-03-27Lam Research CorporationSystem and method of defect optimization for chemical mechanical planarization of polysilicon
US6626740B2 (en)1999-12-232003-09-30Rodel Holdings, Inc.Self-leveling pads and methods relating thereto
US6746311B1 (en)*2000-01-242004-06-083M Innovative Properties CompanyPolishing pad with release layer
US8376813B2 (en)2000-09-082013-02-19Applied Materials, Inc.Retaining ring and articles for carrier head
US8535121B2 (en)2000-09-082013-09-17Applied Materials, Inc.Retaining ring and articles for carrier head
US20100144255A1 (en)*2000-09-082010-06-10Applied Materials, Inc., A Delaware CorporationRetaining ring and articles for carrier head
US20020081956A1 (en)*2000-09-082002-06-27Applied Materials, Inc.Carrier head with vibration dampening
US7497767B2 (en)2000-09-082009-03-03Applied Materials, Inc.Vibration damping during chemical mechanical polishing
US7331847B2 (en)*2000-09-082008-02-19Applied Materials, IncVibration damping in chemical mechanical polishing system
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US20050245181A1 (en)*2000-09-082005-11-03Applied Materials, Inc.Vibration damping during chemical mechanical polishing
US7255637B2 (en)2000-09-082007-08-14Applied Materials, Inc.Carrier head vibration damping
US20060148387A1 (en)*2000-09-082006-07-06Applied Materials, Inc., A Delaware CorporationVibration damping in chemical mechanical polishing system
US7329170B2 (en)2000-12-012008-02-12Toyo Tire & Rubber Co., Ltd.Method of producing polishing pad
US20060148391A1 (en)*2000-12-012006-07-06Koichi OnoPolishing pad and cushion layer for polishing pad
US7641540B2 (en)2000-12-012010-01-05Toyo Tire & Rubber Co., LtdPolishing pad and cushion layer for polishing pad
US7192340B2 (en)2000-12-012007-03-20Toyo Tire & Rubber Co., Ltd.Polishing pad, method of producing the same, and cushion layer for polishing pad
US20040055223A1 (en)*2000-12-012004-03-25Koichi OnoPolishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad
US7762870B2 (en)2000-12-012010-07-27Toyo Tire & Rubber Co., LtdPolishing pad and cushion layer for polishing pad
US20060148393A1 (en)*2000-12-012006-07-06Koichi OnoPolishing pad and cushion layer for polishing pad
US20060148392A1 (en)*2000-12-012006-07-06Koichi OnoMethod of producing polishing pad
US6863774B2 (en)2001-03-082005-03-08Raytech Innovative Solutions, Inc.Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20020127862A1 (en)*2001-03-082002-09-12Cooper Richard D.Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same
EP1295680A3 (en)*2001-09-252003-09-10JSR CorporationPolishing pad for semiconductor wafer
US6848974B2 (en)2001-09-252005-02-01Jsr CorporationPolishing pad for semiconductor wafer and polishing process using thereof
US7025668B2 (en)2002-06-182006-04-11Raytech Innovative Solutions, LlcGradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers
US20040072522A1 (en)*2002-06-182004-04-15Angela PetroskiGradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers
US7037184B2 (en)2003-01-222006-05-02Raytech Innovation Solutions, LlcPolishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20040142638A1 (en)*2003-01-222004-07-22Angela PetroskiPolishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same
US6852020B2 (en)2003-01-222005-02-08Raytech Innovative Solutions, Inc.Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US20040142637A1 (en)*2003-01-222004-07-22Angela PetroskiPolishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US7435161B2 (en)2003-06-172008-10-14Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US20040259484A1 (en)*2003-06-172004-12-23Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US20050197050A1 (en)*2003-06-172005-09-08Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US6884156B2 (en)2003-06-172005-04-26Cabot Microelectronics CorporationMulti-layer polishing pad material for CMP
US20050098446A1 (en)*2003-10-032005-05-12Applied Materials, Inc.Multi-layer polishing pad
US20050221723A1 (en)*2003-10-032005-10-06Applied Materials, Inc.Multi-layer polishing pad for low-pressure polishing
US7654885B2 (en)2003-10-032010-02-02Applied Materials, Inc.Multi-layer polishing pad
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DE1652046A1 (en)1970-05-14

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