US3267015A - Systems and processes for coating by evaporation - Google Patents
Systems and processes for coating by evaporationDownload PDFInfo
- Publication number
- US3267015A US3267015AUS308795AUS30879563AUS3267015AUS 3267015 AUS3267015 AUS 3267015AUS 308795 AUS308795 AUS 308795AUS 30879563 AUS30879563 AUS 30879563AUS 3267015 AUS3267015 AUS 3267015A
- Authority
- US
- United States
- Prior art keywords
- source material
- substrate
- holder
- electron beam
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Definitions
- the present inventionrelates to the coating of substrates with a material evaporated from a heated source and, more particularly, to the vaporization of a source material by electron bombardment heating and the impingement of the resulting vapor on a substrate.
- coatings formed in the foregoing wayhave suffered from poor adhesion and low reflectivity in conse quence of anodization that is thought to be caused by electron flow through the deposited film, brought about by reflected electrons originating from the electron beam, secondary electrons emitted from the source material and vapor thereabove in consequence of energy imparted thereto by the electron beam and positive ions emitted from the source material in consequence of energy imparted thereto by the electron beam.
- the primary object of the present inventionis to provide systems and processes in which coatings of superior brightness and greater adherence are deposited from vapor resulting from heat generated by electron bombardment.
- This electron bombardmentis effected by an electron beam emitted by a cathode at relatively low potential, accelerated by an anode at relatively high potential and focused by a coil that restricts impingement of the beam to a predetermined region of the source material.
- all charged particlesare prevented from reaching the substrate being coated by the generation of suitable electric potentials as barriers between the position from which they emanate and the position of the substrate being coated.
- barriersmay be generated effectively by maintaining the substrate material at the same low potential as the grid bias of the electron gun and interposing between the source material and the substrate a screen grid, adjacent to the source, that is positively charged. In consequence, only uncharged or neutral evaporant reaches the substrate, the resulting coating being free from the anodization normally produced by impinging charged particles.
- the illustrated systemincludes a housing 10 providing a vacuum chamber 12 which is adapted for continuous exhaustion to reduced pressure, preferably less than one micron of mercury, by a suitable exhaust pump (not shown).
- a suitable exhaust pump(not shown).
- Carried in and supported by housing 10are an electron gun 14, a substrate mount 16, a metallic drift tube 18 and a source material mount 20.
- Drift tube 18serves to prevent any interference with the electron beam by the electrostatic control fields established by the components now to be described.
- electron gun 14includes a cathode 22, a bias electrode 24, an anode 26 and a focusing coil 28.
- Cathode 22is at a low negative potential of from 10 to 30 kilovolts, preferably approximately 20 kilovolts.
- the grid biasis maintained slightly more negative than the cathode, preferably approximately 21 kilovolts.
- Anode 26 and drift tube 18both are at a relatively high potential, preferably ground potential.
- Focusing coil 28is in the form of a hollow magnetic metal annulus 30, the inner periphery of which is provided with a slot 32 and the hollow interior of which is provided with a coil 34.
- Electron gun 14is mounted within an insulating casing 36.
- Drift tube 18is supported, at ground potential, from focus coil 28.
- substrate holder 16which is in the form of a hollow conical metallic shape, at the inner surface of which, substrates 37 are adapted to be aflixed. Electron gun 14, drift tube 18 and substrate mount 16 all are coaxial. It will be noted that drift tube 18 projects almost to the lower edge of substrate holder 16, specifically to approximately within two inches of the lower periphery.
- Source material holder 20includes a post 38 that is coaxial with electron gun 14, a cross-plate 40 for use as a support, an upper face 42 upon which source material 44 may be placed, a plurality of insulating posts 46 resting upon cross-plate 40 and a metallic annulus 48 which is supported at the upper extremities of the posts.
- annulus 48ranges in potential from to +500 volts, preferably approximately +300 volts.
- Cathode 22is provided with a potential of 20 kilovolts and bias 24 and mount 16 are provided with a potential of 21 kilovolts by a suitable supply 50; anode 26 and drift tube 18 are grounded; focus 30 is adjusted by focus control 52; grid 48 is provided with a potential of +300 volts by a supply 54; and source material 44 is at ground potential.
- the arrangementis such as to heat the source material, for example, aluminum to a temperature above its vaporization point.
- the present inventionis particularly adapted to the vacuum deposition of aluminum when a coat of high optical reflectivity is desired.
- the present inventionthus provides a simple technique for deriving coatings of superior reflectivity and adherence. Since certain changes may be made in the foregoing disclosure without departing from the scope of the invention herein involved, it is herein intended that all matter contained in the foregoing description and shown in the illustrated drawing be interpreted in an illustrative and not in a limiting sense.
- An electron beam evaporating systemcomprising an electron gun including a cathode for emitting electrons and an anode for accelerating electrons in order to generate an electron beam, a source material holder in the path of said electron beam at which suflicient heat may be generated by said electron beam to vaporize said source material, and a substrate holder for mounting a substrate to receive evaporated material from said source means for applying a relatively low potential to said cathode and said substrate holder, a grid between said source material holder and said substrate holder, means for applying relatively high potential to said grid and said source material holder, means for applying an intermediate potential, between said relatively low potential and said relatively high potential, to said anode, the distance from said source material holder to said substrate holder ranging from 10 to 30 times the distance from said source material holder to said grid, said relatively low potential of said substrate holder establishing a field repelling reflected electrons and secondary electrons emanating from said source material holder and said grid establishing a field reflecting ions emanating from said source material material
- drift tubeextends from said electron gun toward said source material holder in order to shield said electron beam from said field of said substrate holder and said field of said grid.
- An electron beam evaporating systemcomprising a hermetic enclosure, means for continuously evacuating said hermetic enclosure to a pressure below 1 micron of mercury, an electron gun defining an axis and having therealong cathode for emitting electrons and anode means for accelerating electrons in order to generate an electron beam, a source material holding means disposed along said axis in the path of said electron beam at which sufficient heat may be generated by said electron beam to vaporize said source material, and substrate holding means for mounting a substrate to receive evaporated material from said source material holder, power supply means, said power supply means applying a relatively low potential to said cathode and to said substrate holder, grid means between said source material holder and said substrate holding means, said power supply means applying a positive potential to said grid means, and drift limiting means extending along said axis from said electron gun toward said source material holding means, said low potential of said substrate holding means establishing a field capable of shielding said substrate holding means from reflected electrons and secondary electrons emanating from said source
- a process for producing a brilliantly reflecting metallic coat on a substratecomprising the steps of directing an electron beam at a source material in order to heat said source material to a temperature above which it vaporizes, directing vaporized source material from said source material to a substrate, maintaining said substrate at a low negative potential in order to repel reflected electrons and secondary electrons emitted from said source material, and interposing between said substrate and said source material a positive field in order to repeal positively charged ions emitted from said source material, the magnitudes of said fields being such that said electron beam is capable of penetrating said positively charged field, the distance between said source and said substrate ranging from 10 to 30 times the distance between said source and the point of said interposing whereby only neutral vaporized particles from said source material reach said substrate.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
.J. R. MORLEY SYSTEMS AND PROCESSES FOR COATING BY EVAPORATION Filed Sept. 13, 1963 ZOkV POWER 2|kv SUPPLY CONTROL 300V POWER INVENTOR.
ATTORNEYS United States Patent 3,267,015 SYSTEMS AND PROCESSES FOR COATING BY EVAPORATION John R. Morley, North Billerica, Mass., assignor to Alloyd Electronics Corporation, Cambridge, Mass.,
a corporation of Delaware Filed Sept. 13, 1963, Ser. No. 303,795 Claims. (Cl. 204-192) The present invention relates to the coating of substrates with a material evaporated from a heated source and, more particularly, to the vaporization of a source material by electron bombardment heating and the impingement of the resulting vapor on a substrate. In the past, coatings formed in the foregoing way have suffered from poor adhesion and low reflectivity in conse quence of anodization that is thought to be caused by electron flow through the deposited film, brought about by reflected electrons originating from the electron beam, secondary electrons emitted from the source material and vapor thereabove in consequence of energy imparted thereto by the electron beam and positive ions emitted from the source material in consequence of energy imparted thereto by the electron beam.
The primary object of the present invention is to provide systems and processes in which coatings of superior brightness and greater adherence are deposited from vapor resulting from heat generated by electron bombardment. This electron bombardment is effected by an electron beam emitted by a cathode at relatively low potential, accelerated by an anode at relatively high potential and focused by a coil that restricts impingement of the beam to a predetermined region of the source material. In accordance with the present invention, all charged particles are prevented from reaching the substrate being coated by the generation of suitable electric potentials as barriers between the position from which they emanate and the position of the substrate being coated. It has been found that these barriers may be generated effectively by maintaining the substrate material at the same low potential as the grid bias of the electron gun and interposing between the source material and the substrate a screen grid, adjacent to the source, that is positively charged. In consequence, only uncharged or neutral evaporant reaches the substrate, the resulting coating being free from the anodization normally produced by impinging charged particles.
Other objects of the present invention will in part be obvious and will in part appear hereinafter.
The invention accordingly comprises the system and process incorporating the various components, steps and relationships thereamong, which are exemplified in the following disclosure, the scope of which will be indicated in the appended claims. For a fuller understanding of the nature and objects of the present invention, reference is to be had to the following detailed description, taken in connection with the accompanying drawing, wherein a system embodying the present invention is illustrated, partly in mechanical schematic and partly in electrical block.
Generally, the illustrated system includes ahousing 10 providing avacuum chamber 12 which is adapted for continuous exhaustion to reduced pressure, preferably less than one micron of mercury, by a suitable exhaust pump (not shown). Carried in and supported byhousing 10 are anelectron gun 14, asubstrate mount 16, ametallic drift tube 18 and asource material mount 20.Drift tube 18 serves to prevent any interference with the electron beam by the electrostatic control fields established by the components now to be described.
As shown,electron gun 14 includes acathode 22, abias electrode 24, ananode 26 and a focusingcoil 28.
3,267,015 Patented August 16, 1966 Cathode 22 is at a low negative potential of from 10 to 30 kilovolts, preferably approximately 20 kilovolts. The grid bias is maintained slightly more negative than the cathode, preferably approximately 21 kilovolts.Anode 26 anddrift tube 18 both are at a relatively high potential, preferably ground potential. Focusingcoil 28 is in the form of a hollowmagnetic metal annulus 30, the inner periphery of which is provided with aslot 32 and the hollow interior of which is provided with acoil 34. Electrongun 14 is mounted within aninsulating casing 36. Drifttube 18 is supported, at ground potential, fromfocus coil 28.
Depending and diverging fromcasing 36 issubstrate holder 16, which is in the form of a hollow conical metallic shape, at the inner surface of which, substrates 37 are adapted to be aflixed. Electrongun 14,drift tube 18 andsubstrate mount 16 all are coaxial. It will be noted thatdrift tube 18 projects almost to the lower edge ofsubstrate holder 16, specifically to approximately within two inches of the lower periphery.
In operation, at reduced pressure with substrates 37 affixed to the inner surface ofmount 16 and a source material onmount 20. Cathode 22 is provided with a potential of 20 kilovolts andbias 24 andmount 16 are provided with a potential of 21 kilovolts by asuitable supply 50;anode 26 anddrift tube 18 are grounded;focus 30 is adjusted byfocus control 52;grid 48 is provided with a potential of +300 volts by asupply 54; andsource material 44 is at ground potential. The arrangement is such as to heat the source material, for example, aluminum to a temperature above its vaporization point. The present invention is particularly adapted to the vacuum deposition of aluminum when a coat of high optical reflectivity is desired. It has been found that the reflectivity of such an aluminum coat, on a typical metallic or ceramic substrate such as steel or glass, is remarkably high when the interrelationships among the components are such that thedistance 56 fromsource material 44 to substrate 37 is from ten to thirty times the distance 58 fromsource material 44 togrid 48. On the other hand, in the absence of the foregoing relationships, the reflectivity as well as the adherence of the resulting aluminum coating is considerably lower.
The present invention thus provides a simple technique for deriving coatings of superior reflectivity and adherence. Since certain changes may be made in the foregoing disclosure without departing from the scope of the invention herein involved, it is herein intended that all matter contained in the foregoing description and shown in the illustrated drawing be interpreted in an illustrative and not in a limiting sense.
What is claimed is:
1. An electron beam evaporating system comprising an electron gun including a cathode for emitting electrons and an anode for accelerating electrons in order to generate an electron beam, a source material holder in the path of said electron beam at which suflicient heat may be generated by said electron beam to vaporize said source material, and a substrate holder for mounting a substrate to receive evaporated material from said source means for applying a relatively low potential to said cathode and said substrate holder, a grid between said source material holder and said substrate holder, means for applying relatively high potential to said grid and said source material holder, means for applying an intermediate potential, between said relatively low potential and said relatively high potential, to said anode, the distance from said source material holder to said substrate holder ranging from 10 to 30 times the distance from said source material holder to said grid, said relatively low potential of said substrate holder establishing a field repelling reflected electrons and secondary electrons emanating from said source material holder and said grid establishing a field reflecting ions emanating from said source material holder, whereby a brilliant deposit is produ'cible on a substrate on said substrate holder.
2. The electron beam evaporating system of claim 1 wherein a drift tube extends from said electron gun toward said source material holder in order to shield said electron beam from said field of said substrate holder and said field of said grid.
3. The electron beam evaporating system of claim 1 wherein said substrate holder is disposed about a conical surface axially aligned with said gun.
4. The electron beam evaporating system of claim 1 wherein said negative potential ranges from approximately l to 30 kilovolts.
5. The electron beam evaporating system of claim 1 wherein said positive potential ranges from 100 to 500 volts.
6. The electron beam evaporating system of claim 1 wherein said anode is approximately at ground potential.
7. The electron beam evaporating system of claim 1 wherein the distance from said source material holder to said substrate holder ranges from to times the distance between said source material holder and said grid.
8. An electron beam evaporating system comprising a hermetic enclosure, means for continuously evacuating said hermetic enclosure to a pressure below 1 micron of mercury, an electron gun defining an axis and having therealong cathode for emitting electrons and anode means for accelerating electrons in order to generate an electron beam, a source material holding means disposed along said axis in the path of said electron beam at which sufficient heat may be generated by said electron beam to vaporize said source material, and substrate holding means for mounting a substrate to receive evaporated material from said source material holder, power supply means, said power supply means applying a relatively low potential to said cathode and to said substrate holder, grid means between said source material holder and said substrate holding means, said power supply means applying a positive potential to said grid means, and drift limiting means extending along said axis from said electron gun toward said source material holding means, said low potential of said substrate holding means establishing a field capable of shielding said substrate holding means from reflected electrons and secondary electrons emanating from said source material holding means, said positive potential of said grid means establishing a field capable of shielding said substrate holding means from ions emanating from said source material holding means.
9. The electron beam evaporating system of claim 8 wherein said low potential ranges approximately from 10 to 30 kilovolts, wherein said positive potential ranges approximately from to 500 volts and said anode means and said drift limiting means are approximately at ground potential.
10. A process for producing a brilliantly reflecting metallic coat on a substrate, said process comprising the steps of directing an electron beam at a source material in order to heat said source material to a temperature above which it vaporizes, directing vaporized source material from said source material to a substrate, maintaining said substrate at a low negative potential in order to repel reflected electrons and secondary electrons emitted from said source material, and interposing between said substrate and said source material a positive field in order to repeal positively charged ions emitted from said source material, the magnitudes of said fields being such that said electron beam is capable of penetrating said positively charged field, the distance between said source and said substrate ranging from 10 to 30 times the distance between said source and the point of said interposing whereby only neutral vaporized particles from said source material reach said substrate.
References Cited by the Examiner UNITED STATES PATENTS 2,281,638 5/1942 Sukumlyn 117-93.3 3,071,533 1/ 1963 Blankenship 204-298 3,182,175 5/1965 Sibley 25049.5 3,205,087 9/1965 Allen 11793.3
FOREIGN PATENTS 759,917 10/1956 Great Britain.
JOHN H. MACK, Primary Examiner.
R. K. MIHALEK, Assistant Examiner.
Claims (2)
1. AN ELECTRON BEAM EVAPORATING SYSTEM COMPRISING AND ELECTRON GUN INCLUDING A CATHODE FOR EMITTING ELECTRONS AND AN ANODE FOR ACCELERATING ELECTRONS IN ORDER TO GENERATE AN ELECTRON BEAM, A SOURCE MATERIAL HOLDER IN THE PATH OF SAID ELECTRON BEAM AT WHICH SUFFICIENT HEAT MAY BE GENERATED BY SAID ELECTRON BEAM TO VAPORIZE SAID SOURCE MATERIAL, AND A SUBSTRATE HOLDER FOR MOUNTING A SUBSTRATE TO RECEIVE EVAPORATED MATERIAL FROM SAID SOURCE MEANS FOR APPLYING A RELATIVELY LOW POTENTIAL TO SAID CATHODE AND SAID SUBSTRATE HOLDER, A GRID BETWEEN SAID SOURCE MATERIAL HOLDER AND SAID SUBSTRATE HOLDER, MEANS FOR APPLYING RELATIVELY HIGH POTENTIAL TO SAID GRID AND SAID SOURCE MATERIAL HOLDER, MEANS FOR APPLYING AN INTERMEDIATE POTENTIAL, BETWEEN SAID RELATIVELY LOW POTENTIAL AND SAID RELATIVELY HIGH POTENTIAL, TO SAID ANODE, THE DISTANCE FROM SAID SOURCE MATERIAL HOLDER TO SAID SUBSTRATE HOLDER RANGING FROM 10 TO 30 TIMES THE DISTANCE FROM SAID SOURCE MATERIAL HOLDER TO SAID GRID, SAID RELATIVELY LOW POTENTIAL OF SAID SUBSTRATE HOLDER ESTABLISHING A FIELD REPELLING REFLECTED ELECTRONS AND SECONDARY ELECTRONS EMANATING FROM SAID SOURCE MATERIAL HOLDER AND SAID GRID ESTABLISHING A FIELD REFLECTING IONS EMANATING FROM SAID SOURCE MATE-
10. A PROCESS FOR PRODUCING A BRILLINATLY REFLCTING METALLIC COAT ON A SUBSTRATE, SAID PROCESS COMPRISING THE STEPS OF DIRECTING AN ELECTRON BEAM AT A SOURCE MATERIAL IN ORDER TO HEAT SAID SOURCE MATERIAL TO A TEMPERATURE ABOVE WHICH IT VAPORIZES, DIRECTING VAPORIZED SOURCE MATERIAL FROM SAID SUORCE MATERIAL TO A SUBSTRATE, MAINTAINING SAID SUBSTRATE AT A LOW NEGATIVE POTENTIAL IN ORDER TO REPEL REFLECTED ELECTRONS AND SECONDARY ELECTRONS EMITTED FROM SAID SOURCE MATERIAL, AND INTERPOSING BETWEEN SAID SUBSTRATE AND SAID SOURCE MATERIAL A POSITIVE FIELD IN ORDER TO REPEAL POSITIVELY CHARGED IONS EMITTED FROM SAID SOURCE MATERIAL, THE MAGNITUDES OF SAID FIELDS BEING SUCH THAT SAID ELECTRON BEAM IS CAPABLE OF PENETRATING SAID POSITIVELY CHARGED FIELD, THE DISTANCE BETWEEN SAID SOURCE AND SAID SUBSTRATE RANGING FROM 10 TO 30 TIMES THE DISTANCE BETWEEN SAID SOURCE AND THE POINT OF SAID INTERPOSING WHEREBY ONLY NEUTRAL VAPORIZED PARTICLES FROM SAID SOURCE MATERIAL REACH SAID SUBSTRATE.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US308795AUS3267015A (en) | 1963-09-13 | 1963-09-13 | Systems and processes for coating by evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US308795AUS3267015A (en) | 1963-09-13 | 1963-09-13 | Systems and processes for coating by evaporation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3267015Atrue US3267015A (en) | 1966-08-16 |
Family
ID=23195425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US308795AExpired - LifetimeUS3267015A (en) | 1963-09-13 | 1963-09-13 | Systems and processes for coating by evaporation |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3267015A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3329601A (en)* | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
| US3366562A (en)* | 1965-04-29 | 1968-01-30 | Commerce Usa | Method of conducting electrolysis in a solid ionic conductor using an electron beam |
| US3404084A (en)* | 1965-10-20 | 1968-10-01 | Gen Precision Systems Inc | Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate |
| US3404255A (en)* | 1965-06-23 | 1968-10-01 | Bendix Corp | Source of vaporizable material for bombardment thereof by an electron bombarding means |
| US3472755A (en)* | 1966-07-18 | 1969-10-14 | Bendix Corp | Cathodic sputtering apparatus wherein the electron source is positioned through the sputtering target |
| US3485997A (en)* | 1965-11-26 | 1969-12-23 | Balzers Patent Beteilig Ag | Process and apparatus for the thermal vaporization of mixtures of substances in a vacuum |
| US3528906A (en)* | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
| US3795783A (en)* | 1968-06-26 | 1974-03-05 | Glaverbel | Apparatus for surface coating articles |
| US4125446A (en)* | 1977-08-15 | 1978-11-14 | Airco, Inc. | Controlled reflectance of sputtered aluminum layers |
| US4561382A (en)* | 1983-11-22 | 1985-12-31 | The United States Of America As Represented By The United States Department Of Energy | Vacuum vapor deposition gun assembly |
| US4620081A (en)* | 1984-08-03 | 1986-10-28 | The United States Of America As Represented By The United States Department Of Energy | Self-contained hot-hollow cathode gun source assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2281638A (en)* | 1940-05-17 | 1942-05-05 | Thomas W Sukumlyn | Electron camera |
| GB759917A (en)* | 1953-09-30 | 1956-10-24 | Vickers Electrical Co Ltd | Improvements relating to mass spectrometers |
| US3071533A (en)* | 1958-09-11 | 1963-01-01 | Varo Mfg Co Inc | Deposition control means |
| US3182175A (en)* | 1962-09-24 | 1965-05-04 | Nat Res Corp | Electron beam heating device |
| US3205087A (en)* | 1961-12-15 | 1965-09-07 | Martin Marietta Corp | Selective vacuum deposition of thin film |
- 1963
- 1963-09-13USUS308795Apatent/US3267015A/ennot_activeExpired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2281638A (en)* | 1940-05-17 | 1942-05-05 | Thomas W Sukumlyn | Electron camera |
| GB759917A (en)* | 1953-09-30 | 1956-10-24 | Vickers Electrical Co Ltd | Improvements relating to mass spectrometers |
| US3071533A (en)* | 1958-09-11 | 1963-01-01 | Varo Mfg Co Inc | Deposition control means |
| US3205087A (en)* | 1961-12-15 | 1965-09-07 | Martin Marietta Corp | Selective vacuum deposition of thin film |
| US3182175A (en)* | 1962-09-24 | 1965-05-04 | Nat Res Corp | Electron beam heating device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3329601A (en)* | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
| US3366562A (en)* | 1965-04-29 | 1968-01-30 | Commerce Usa | Method of conducting electrolysis in a solid ionic conductor using an electron beam |
| US3404255A (en)* | 1965-06-23 | 1968-10-01 | Bendix Corp | Source of vaporizable material for bombardment thereof by an electron bombarding means |
| US3404084A (en)* | 1965-10-20 | 1968-10-01 | Gen Precision Systems Inc | Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate |
| US3485997A (en)* | 1965-11-26 | 1969-12-23 | Balzers Patent Beteilig Ag | Process and apparatus for the thermal vaporization of mixtures of substances in a vacuum |
| US3472755A (en)* | 1966-07-18 | 1969-10-14 | Bendix Corp | Cathodic sputtering apparatus wherein the electron source is positioned through the sputtering target |
| US3528906A (en)* | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
| US3795783A (en)* | 1968-06-26 | 1974-03-05 | Glaverbel | Apparatus for surface coating articles |
| US4125446A (en)* | 1977-08-15 | 1978-11-14 | Airco, Inc. | Controlled reflectance of sputtered aluminum layers |
| US4561382A (en)* | 1983-11-22 | 1985-12-31 | The United States Of America As Represented By The United States Department Of Energy | Vacuum vapor deposition gun assembly |
| US4620081A (en)* | 1984-08-03 | 1986-10-28 | The United States Of America As Represented By The United States Department Of Energy | Self-contained hot-hollow cathode gun source assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3046936A (en) | Improvement in vacuum coating apparatus comprising an ion trap for the electron gun thereof | |
| US3562141A (en) | Vacuum vapor deposition utilizing low voltage electron beam | |
| US4448802A (en) | Method and apparatus for evaporating material under vacuum using both an arc discharge and electron beam | |
| US5656141A (en) | Apparatus for coating substrates | |
| US4420386A (en) | Method for pure ion plating using magnetic fields | |
| US3472751A (en) | Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam | |
| US3756193A (en) | Coating apparatus | |
| US3192892A (en) | Ion bombardment cleaning and coating apparatus | |
| US3267015A (en) | Systems and processes for coating by evaporation | |
| US3205087A (en) | Selective vacuum deposition of thin film | |
| RU2016117814A (en) | PROCESSES USING REMOTE ARC PLASMA | |
| JP2002512658A (en) | Sputter coating apparatus and method using substrate electrode | |
| US4876984A (en) | Apparatus for forming a thin film | |
| US5099791A (en) | Cluster beam thin film deposition apparatus with thermionic electron control | |
| Wan et al. | Investigation of Hot-Filament and Hollow-Cathode Electron-Beam Techniques for Ion Plating | |
| US3404084A (en) | Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate | |
| US3492215A (en) | Sputtering of material simultaneously evaporated onto the target | |
| US5466941A (en) | Negative ion sputtering beam source | |
| JP3345009B2 (en) | Method for ionizing material vapor produced by heating and apparatus for performing the method | |
| US5180477A (en) | Thin film deposition apparatus | |
| US3573098A (en) | Ion beam deposition unit | |
| JP3481953B2 (en) | Equipment for coating substrates | |
| Probyn | A low-energy ion source for the deposition of chromium | |
| JPH06228744A (en) | Electron beam source assembly | |
| US20090020415A1 (en) | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source |