Aug. 4, 1964 w. 5. AUGUST HEAT DISSIPATING MOUNTING STRUCTURE FOR SEMICONDUCTOR DEVICES 2 SheetsSheet 1 Filed Nov. 14, 1961 g VVVVVVVVVVVVVVV VVVV VVVVZVVV VVWV V W/LL/AM 6. AUGUST INVENTOR.
EM AW A 7TO/2NEY5 Aug. 4, 1964 w. 5. AUGUST HEAT DISSIPATING MOUNTING STRUCTURE FOR SEMICONDUCTOR DEVICES 2 Sheets-Sheet 2 Filed Nov. 14, 1961 W/LL/A/V J. AUGUST INVENTOR.
A 7TORNE Y5 United Sates Patent l 3,143,592 HEAT DISSHATING MOUNTING STRUCTURE FOR SEMICONDUCTOR DEVICES William S. August, Altadena, Calif, assignor to Inland Electronics Products Corporation, Pasadena, Calif., a corporation of California Filed Nov. 14,1961, Ser. No. 152,340
3 Claims. (Cl. 174-15) This invention relates generally to units for mounting semiconductor devices, and more particularly to a mounting structure for dissipating the heat generated by the operation of semiconductor devices.
It has long been recognized that the efliciency of a semiconductor device such as a transistor or diode decreases with increasing temperature. Additionally, the operating characteristics of many semiconductors vary appreciably over the temperature range of operation so that the performance will begin to deteriorate to a degree rendering the devices unusable for many purposes long before such a temperature causing complete failure has been reached.
Therefore, it is desirable to cool a semiconductor device and to maintain consistent its operating temperature to assure reliable operation. vided for dissipating the heat generated during the operation of a semiconductor device, the device may be operated at higher power levels with a general increase in the efficiency of the device and of the circuit of which the device forms a part.
Various arrangements have been suggested in the past for cooling semiconductor devices. For example, a heat sink may be employed to dissipate the heat generated by the operation of the semiconductor device. A heat sink normally comprises a large metallic plate adapted to mount a semiconductor and to conduct away the heat generated by'its operation. A heat sink is generally not eflicient enough, however, to limit the temperature to a desirable range and may be useless when a number of devices are operated in such close physical relationship that insufiicient space is available for heat dissipation. The operation of a heat sink maybe improved by the forced circulation of air about the heat sink. While this procedure permits lowering the temperature of the semi conductor appreciably, it requires the expenditure of additional power for circulating the air and, in some instances, for cooling the air. Further, in many applications the additional space necessary for the equipment required for forced air circulation is unavailable.
Thus, the problem of maintaining semiconductor devices at relatively low and constant temperatures, slightly above ambient temperatures, is extremely difiicult when a number of semiconductor devices are arranged in close physical association. On the other hand, if the heat generated during the operation of a semiconductor device can be efficiently dissipated, a large number of devices may be arranged in .a given physical space.
Accordingly, it is an object of the present invention to provide an improved mounting structure for semiconductor devices which will efficiently dissipate the heat generated during the operation of the devices.
Another object of the present invention is to provide a heat-dissipating mounting structure which requires no additional power to remove the heat generated by the operation of the semiconductor devices.
A further object of the present invention is to provide a mounting structure for semiconductor devices which permits the positioning of the devices in a plurality of adjacent layers with sufiicient clearance for interconnection and other circuit components and also permits the chicient dissipation of the heat generated when the devices are in operation.
-An additional object of this invention is to provide a If efiicient means are pro- 7 3,1435% Patented Aug. 4, 1964 semiconductor heat-dissipating mount which is of a size and shape adaptable to compact and miniature circuit arrangements.
In accordance with the present invention there is provided a mounting plate of thermally-conductive material, such as a metal, for supporting one or more semiconductor devices. In order to dissipate the heat generated by the semiconductor device, a conduit is thermally coupled to the mounting plate. This may, for example, be effected by providing substantially-parallel hollow extensions on the plate which are interconnected by tubes; The hollow extensions and tubes are filled with a material, such as Freon, which is liquid at a temperature slightly below the selected operating temperature of the devices and vaporizes at the operating temperature or slightly above the operating temperature. As the liquid vaporizes, it effectively draws off the heat from the mounting plate and the semiconductor. The tubes have a portion disposed away from and above the mounting plate in which the vapor rises and collects. The vapor is then condensed by heat exchange with the atmosphere away from the semiconductor device, and the liquid returns to receive heat from the operating device. Preferably, the vaporcollecting portions of the tubes are provided with thermally-conductive fins to improve the heat exchange between the vapor in the tube and the atmosphere.
These and other objects of the present invention will be more apparent from the following detailed description, taken in connection with the accompanying drawings, wherein like elements are designated by the same or primed reference characters, and in which:
FIG. 1 is a perspective view of an embodiment of the present invention showing three transistors disposed thereon;
FIG. 2 is a plan view of the structure of FIG. 1;
FIG. 3 is a sectional view taken on line 3-3 of FIG. 2 illustrating an embodiment including two mounting plates disposed in closely adjacent or nesting arrangement; and
FIG. 4 is a side-elevational View of the structure of FIG. 1 illustrating the heat exchanger tubes.
Referring now to the drawings, there is illustrated a heat-dissipating transistor mounting structure in accordance with thepresent invention comprising amounting plate 10. Themounting plate 10 is constructed of a heat-conducting material such as metal. The mounting 7 plate may consist of copper or of aluminum (aluminum may be anodized to provide a tarnish-resisting surface finish). As shown particularly in FIGS. 1-3 a plurality oftransistors 11, for example three, may be disposed in varying positions as desired on themounting plate 10. As illustrated, each of thetransistors 11 may have acylindrical body 12, a largercylindrical base portion 13 which is adapted to provide a large heat-dissipation surface, and twopins 14 and 15 which are the emitter and collector connections. The emitter andcollector pins 14 and 15 may extend through suitable openings in themounting plate 10. It will be appreciated that semiconductor devices of other shapes may be mounted in a similar manner.
In accordance with the present invention themounting plate 10 is provided with two parallelhollow extensions 17 and 18 disposed on the sides of thetransistors 11. The extensions orhollow tubes 17 and 18 may be made integral with themounting plate 10 or may be thermally coupled thereto. As shown particularly in FIG. 3, theextensions 17 and 18 are each provided with abore 20 for receiving a hollow tube. In addition, abore 21 may be provided at the lower end of theextensions 17 and 18 for receiving a hollow tube somewhat larger than that received by thebore 20 thereby providing a reservoir.
As illustrated particularly in FIG. 3, each of thehollow extensions 17, 18 is provided with aside plate 22, 23, respectively. Theside plates 22 and 23 may be made integral with or may be secured to their respective hollow extensions. Each of theside plates 22, 23 has avertical portion 24, an upperrounded termination 25, a lowercurved portion 26 and ahorizontal portion 27,portion 27 extending at right angles to thevertical portion 24. Thehorizontal portion 27 is provided with cut-outs 28.
As illustrated in FIG. 3, two of the mounting structures of the invention may be disposed in nesting relationship. The lower mounting structure illustrated is identical with the upper mounting structure and its elements are designated by the same reference numbers, primed. Thus it'will be observed that therounded extension 25 of the lower mounting plate 11) is received by thecurved portion 26 of the upper mounting plate 11). Furthermore, each of thehollow extensions 17, 18 is provided with a downwardly extending projection orprotuberance 30 which rests upon alower extension 17, 18' to provide a more rigid support. The two structures It) and may be slid into each other or thecurved portions 26 may be forced over the rounded terminations 25'.
Atube 32 is fitted into thebores 21 of the twohollow extensions 17 and 18. Thetube 32 may consist of any heat conducting material but preferably consists of aluminum. Thetube 32 is secured to thebore 21 by a suitable sealing means such as an epoxy resin which is impervious to the liquid contained in the tube. It is essential that a liquid and vapor tight seal be provided between thetube 32 and the interior ofextensions 17 and 18.
Twotubes 33 and 34 (which may have a smaller outer diameter than the tube 32) are respectively fitted into the bores of theextensions 17 and 18. Thetubes 33 and 34 may be constructed of the same heat-conducting material as thetube 32 and may be sealed or fastened with epoxy resin. Thetubes 33 and 34 extend above thestructure 10, as clearly shown in FIGS. 2 and 4, and may be joined together as by thepieces 43 and 43'. Eachpiece 43 may be advantageously fitted with afiller cap 35 having a hexagonal threadedcover 36 and anylon washer 37. By removing thecover 36, the tubes may be filled with a suitable material. Although thetube 32 is shown to be of larger diameter than thetubes 33 and 34 to hold a larger supply of liquid, it is also feasible to usetubes 32, 33 and 34 of equal diameter. In such a case bore 20 may extend all the way through theextensions 17 and 18.
Preferably, a portion of thetubes 33 and 34 extending above themount 10 are provided with heat-conductingfins 40. Thefins 40 may consist of a heat conducting ribbon helically wound about thetubes 33 and 34 and secured thereto at one extremity of the ribbons width. This may be effected by first winding theribbon 41 on edge with a spacer wire between the convolutions of the ribbon, soldering both wire and ribbon and removing the wire. Alternatively, thefins 40 may be formed by machining on a metal working lathe.
,It will be noted from an inspection of FIG. 4 that thetube 33 has a relativelyshort bend 41 interconnecting thehollow extension 18 and theheat exchanger tube 40. Thetube 33 has alarger bend 41 so that the heat exchanger tube 49 may be disposed side-by-side with theheat exchanger tube 40 when a number of mountingstructures 10 are stacked together.
Thus, the two mountingstructures 10 and 10 may he slid into each other by first disposing theheat exchanger tubes 40 and 48 away from each other and then sliding the circular termination into thebend 26 until thefinned tubes 40 and 40' are disposed side-by-side as shown in FIG. 4. It will also be understood that more than two structures may be disposed in nested relationship as long as the bends of thetubes 33 and 34 of the additional mounts are sufiiciently long so as to dispose the various finned tubes such as 40 and 40 in non-interfering relationship. Other shapes oftubes 40 and40 may be provided to fit the situation encountered.
The chamber formed by thehollow extensions 17 and 18, interconnectingtube 32, and thetubes 33 and 34 is filled through thefiller cap 36 with a suitable material such as Freon which may be chosen to be liquid at room temperature and become vaporous at the operating temperature of thetransistors 11. Many liquids will be suitable for this purpose. For example, various Freon compounds of different boiling points are available such as Trichloromonofiuoromethane (74.8" F.), Trichlorotrifluoroethane (ll7.6 F.) and others. Further, the chamber may be sealed to maintain a selected pressure. Since the temperature at which a liquid vaporizes depends to a large extent on the pressure of the liquid, the vaporizing temperature may be adjusted to be approximately at practically any desired operating temperature. It should be understood that liquids which comprise two or more basic liquids, one
of which vaporizes at a lower temperature than the other, may be utilized in accordance with this invention by selecting the lower-vaporizing liquid to have an appropriate vaporizing temperature. The last-mentioned liquid will then vaporize at operating temperatures to conduct heat away from the plate while the other basic liquid will remain adjacent the plate to provide a conduit for dissipating additional heat.
As atransistor 11 is operated, its temperature increases and the resulting heat is coupled by the mountingplate 10 into the liquid in the tube system. Eventually the liquid'in the chamber vaporizes, and the vapor rises into the finned tube 41}. There, by heat exchange with the atmosphere, the vapor condenses, and the liquid runs back by action of gravity into thehollow extensions 17 and 18. As a result, the temperature of thetransistors 11 can not far exceed the temperature at which the liquid in the tube system vaporizes. The sizes and inner diameters of connectingtube 32 and ofextensions 17 and 18 primarily determine the amount of liquid the system will hold.
It will be noted that the cooling action does not require any power for driving pumps, fans or the like. Accordingly, thefinned tubes 40, 40' should be designed to carry away all the heat the transistors or other semiconductors disposed on the heat dissipating mount are expected to generate.
It will be noted from an inspection of FIG. 3 that the space between mountingplates 10 and 18 is sufficient to permit mounting a transistor or similar semiconductor device therebetween. Also other electric components such as resistors, capacitors or inductors may be mounted in the remaining space between theplates 10 and 10. and in the apertures 28 and 28'. The space between thetabs 27 and 27' is also available for this purpose. The area of the mountingplate 10 may be so designed as to mount the desired number of semiconductor devices.
Although there has been described above a specific arrangement of a heat-dissipating semiconductor mount in accordance with the invention for the purpose of illustrating the manner in which the invention may be used to advantage, it will be appreciated that the invention is not limited thereto. Accordingly, any and all modifications, variations or equivalent arrangements falling within the scope of the annexed claims should be considered to be a part of the invention.
What is claimed is:
1. A mounting structure adapted to support semiconductor devices and to dissipate the heat generated by the operation thereof, comprising at least two support plates, each of said support plates being adapted to support a semiconductor device; two substantially-parallel hollow extensions thermally coupled to each of said support plates adjacent the device supported thereon; hollow tubes individually associated with each of said plates and interconnecting the open ends of said extensions associated therewith to form a closed liquid-vapor system, said tubes including a portion disposed above said support plates; a material disposed in said tubes and extensions at a pressure so as to be liquid at room temperatures and to be a vapor at the operating temperature of the semiconductor device whereby any vapor of said material tends to collect in said tube portions and is condensed by heat exchange with the atmosphere; an individual side member secured to each of said hollow extensions associated with each of said support plates, means on said side members for interlocking the side members of adjacent ones of said plates, and a protuberance projecting from each of said extensions to engage the extensions associated with the adjacent plate.
2. A mounting structure adapted to support semiconductor devices and to dissipate heat generated by the operation thereof comprising at least two support plates, each of said support plates being adapted to support a semiconductor device and having two substantially-parallel hollow extensions disposed symmetrically about the device, each of said support plates having a side member secured to one of its hollow extensions, and means on said side members for interlocking the side members of adjacent ones of said plates; hollow tubes interconnecting the open ends of the extensions of each of said plates to form a closed liquid-vapor system, said tubes including a portion having heat-dissipating fins disposed above said support plates; and a vaporizable material disposed in said tubes and extensions at a pressure so as to be liquid at room temperatures and to become a vapor at the operating temperature of the semiconductor device whereby vapor tends to collect in said finned tube portions and is condensed by heat exchange with the atmosphere.
3. A mounting structure adapted to support semiconductor devices and to dissipate the heat generated by the operation thereof comprising at least two support plates, each of said support plates being adapted to support a semiconductor device and having two substantially-parallel hollow extensions disposed symmetrically about the device, each of said support plates having a side member secured to one of its hollow extensions, means on both ends of said side members for interlocking the side.members of adjacent ones of said plates, and a protuberance projecting from each of said extensions to engage the extensions of the adjacent plate; hollow tubes interconnecting the open ends of the extensions of each of said plates to form a closed liquid-vapor system, said tubes including a portion having heat-dissipating fins disposed above said support plates; and a material disposed in said tubes and extensions at a pressure so as to be liquid at temperatures below the operating temperature of the semiconductor device and to be a vapor at the operating temperature of the semiconductor device whereby any vapor of said material tends to collect in said finned tube portions and is condensed by heat exchange with the ambient atmosphere.
References Cited in the file of this patent UNITED STATES PATENTS 2,958,021 Cornelison et al. Oct. 25, 1960 3,024,298 Goltsos et a1. Mar. 6, 1962 3,035,419 Wigert May 22, 1962