US20240266150A1 - Semiconductor processing chamber - Google Patents

Abstract

The present disclosure provides a semiconductor processing chamber including a chamber, a housing, a dielectric window, a coil, a hot air hood, and an air distribution structure. The chamber has an opening at a top of the chamber. The housing is disposed above the opening. The dielectric window is disposed inside the housing and above the opening. The coil is arranged circumferentially at an inner top wall of the housing. The hot air hood is disposed inside the housing. The air distribution structure is fixedly attached to the housing. The air distribution structure includes a plurality of air passages. An air exchange port of the air passage is located outside the housing. A transfer port of the air passage is located inside the housing and is connected to an air passage port of the hot air hood. Through directly fixing the hot air hood to the dielectric window and configuring a clearance gap between the hot air hood and an inner top wall of the housing, the semiconductor processing chamber avoids compression between the hot air hood and the housing, avoids the deformation of the top wall of the housing and the change of coil distribution structure caused by the compression of the top wall of the housing by the hot air hood. Thus, the uniform distribution of the ions and free radicals in the plasma is ensured.

Description

TECHNICAL FIELD
• The present disclosure relates to the technical field of semiconductor processing technologies and, more particularly, to a semiconductor processing chamber.
BACKGROUND
• Etching is a process of selectively removing unnecessary materials from a surface of a semiconductor such as a wafer using a chemical or a physical method. It is a general term for a process of stripping and removing materials through using solutions, reactive ions, or other mechanical methods. In the field of integrated circuit manufacturing, a semiconductor processing chamber is often used to perform an etching process through using the reactive ions.
• However, in an existing semiconductor processing chamber, a hot air hood for heating a dielectric window is located between the dielectric window and an inner top wall of a housing (for example, used as a coil bracket), and is fixedly attached to the dielectric window when being pressed by the inner top wall of the housing, such that the hot air hood produces a reaction force on the inner top wall of the housing to push the inner top wall of the housing to cause deformation. The deformed inner top wall in turn causes a change to a distribution structure of coils attached to the inner top wall, thereby affecting uniform distribution of ions and free radicals in a plasma.
SUMMARY
• The present disclosure provides a semiconductor processing chamber to solve problem of the deformation of the top wall of the housing and the change of coil distribution structure caused by the compression of the top wall of the housing by the hot air hood, and subsequent uneven distribution of the ions and free radicals in a plasma.
• To solve the above problem, the present disclosure provides the following technical solutions.
• One aspect of the present disclosure provides a semiconductor processing chamber. The semiconductor processing chamber includes a chamber having an opening at a top of the chamber; a housing disposed above the opening; a dielectric window disposed inside the housing and above the opening; a coil arranged circumferentially at an inner top wall of the housing; a hot air hood disposed inside the housing and fixedly attached to the dielectric window, where the hot air hood and the inner top wall of the housing are separated by a clearance gap, and the hot air hood includes a heating compartment for heating the dielectric window and at least two air passage ports connected to the heating compartment; and an air distribution structure being fixedly attached to the housing and including a plurality of air passages, at least two air exchange ports located outside the housing for air intake and air discharge, and at least two transfer ports located inside the housing and respectively connected to the at least two air exchange ports. Equal numbers of exchange ports and transfer ports are connected to each other in a one-to-one correspondence.
• Further, the hot air hood includes a hood body and a connecting member disposed at an outer wall of the hood body, and the hood body is fixedly attached to the dielectric window through the connecting member.
• Further, an opening is configured at a bottom of the hood body, an inner wall of the hood body and a top surface of the dielectric window are enclosed to form a heating compartment, and a flanging is configured at a surrounding edge of the hood body located at the opening facing the outside of the heating compartment, and the flanging is the connecting member.
• Further, the air distribution structure includes at least two plug-in connectors, each plug-in connector includes a transfer port, the plug-in connector is inserted into an air passage port to connect between the transfer port and the air passage port, and a sealing ring is configured between an outer wall of the plug-in connector and an inner wall of the air passage port to seal the air passage port.
• Further, the outer wall of the plug-in connector is configured with an annular dovetail groove surrounding its circumference, the sealing ring is arranged partly in the annular dovetail groove, the sealing ring extends partly out of the annular dovetail groove and pushes against the inner wall of the air passage port.
• Further, the heating compartment includes a plurality of heating sub-chamber separated from each other, each heating sub-chamber is connected to two air passage ports, the air passage ports connected to different heating sub-chambers are different, one of the two air passage ports connected to the same heating sub-chamber is an air inlet for air intake, and the other of the two air passage ports connected to the same heating sub-chamber is an air outlet for air discharge.
• Further, the heating compartment includes a plurality of concentric ring-shaped compartments and a partition plate extending in a radial direction of the plurality of concentric ring-shaped compartments, the partition plate symmetrically divides each ring-shaped compartment into two half ring-shaped compartments, the half ring-shaped compartments are the heating sub-compartments, and the air inlet and the air outlet connected to the same heating sub-compartment are located at both ends of the same heating sub-compartment.
• Further, a first pressure release hole is configured between two adjacent heating sub-compartments with different diameters to facilitate connection between two adjacent heating sub-compartments with different diameters, and the heating sub-compartment with the smallest diameter is configured with a second pressure release hole connected to the outside of the heating compartment.
• Further, the number of air passages is four, two air passages are air intake passages, the other two air passages are air discharge passages, the two air intake passages are respectively arranged on both sides of the partition plate, the two air discharge passages are also respectively arranged on both sides of the partition plate, each air intake passage and each air discharge passage both have two transfer ports, and each air intake passage and each air discharge passage both have the air exchange port. The two transfer ports of each air intake passage are respectively connected to inlets of two adjacent heating sub-chambers located on the same side of the partition plate. The two transfer ports of each air discharge passage are respectively connected to outlets of two adjacent heating sub-chambers located on the same side of the partition plate.
• Further, the air exchange ports of the two air intake passages are used to connect to the air outlet of a first heater and the air outlet of a second heater, respectively. The air exchange ports of the two air discharge passages are used to connect to the air inlet of the first heater and the air inlet of the second heater, respectively.
• Further, a boss is configured at a top surface of the hot air hood, the air passage port is connected to the heating compartment through a top surface of the boss, and the clearance gap is configured between the top surface of the boss and the inner top wall of the housing.
• The embodiments of the present disclosure provide at least the following beneficial effects. Through directly fixing the hot air hood to the dielectric window and configuring a clearance gap between the hot air hood and an inner top wall of the housing, the semiconductor processing chamber avoids compression between the hot air hood and the housing, avoids the deformation of the top wall of the housing and the change of coil distribution structure caused by the compression of the top wall of the housing by the hot air hood. Thus, the uniform distribution of the ions and free radicals in the plasma is ensured.
BRIEF DESCRIPTION OF THE DRAWINGS
• The accompanying drawings briefly described here will be used to provide further understanding of the present disclosure, and constitute a part of the present disclosure. Embodiments of the present disclosure and descriptions thereof are used to illustrate the present disclosure, and are not intended to limit the present disclosure.
• FIG.1 is a schematic structural diagram of a semiconductor processing chamber in related art;
• FIG.2 is an enlarged view of portion I ofFIG.1;
• FIG.3 is a schematic diagram showing a failure of a second sealing ring when using the semiconductor processing chamber in the related art;
• FIG.4 is a schematic diagram showing a deformed coil bracket plate when using the semiconductor processing chamber in the related art;
• FIG.5 is a schematic structural diagram of an exemplary semiconductor processing chamber according to some embodiments of the present disclosure;
• FIG.6 is an enlarged view of portion II ofFIG.5;
• FIG.7 is a schematic structural diagram of an exemplary air distribution structure according to some embodiments of the present disclosure;
• FIG.8 is an enlarged view of portion III ofFIG.7;
• FIG.9 is a schematic diagram showing connecting a plug-in connector into a port of an air passage according to some embodiments of the present disclosure;
• FIG.10 is a schematic structural diagram of an exemplary hot air hood according to some embodiments of the present disclosure; and
• FIG.11 is a schematic diagram showing coupling of a hot air hood and an air passage according to some embodiments of the present disclosure.
• Numerals in the drawings include:1—housing,1A—bracket assembly,1B—coil bracket plate,2—chamber,3—first sealing ring,4—coil,5—fixture,6′—air passage,61′—air exchange port,62′—transfer port,7′—second sealing ring,8′—hot air hood,8A′—air passage port,8C′—heating compartment,6—air passage,61—air exchange port,62—transfer port,63—plug-in connector,64—annular dovetail groove,6A—air intake passage,6B—air discharge passage,7—sealing ring,8—hot air hood,8A—air passage port,8B—connecting member,8C—heating compartment,8C1—heating sub-compartment,8D1—first pressure release hole,8D2—second pressure release hole,8E—baffle plate,9—dielectric window,10—nozzle, G1—first heater, G2—second heater, P—first line position, Q—second line position, and O—clearance gap.
DETAILED DESCRIPTION OF THE EMBODIMENTS
• To make the objectives, technical solutions, and advantages of the present disclosure clearer, the technical solutions of the present disclosure will be clearly and completely described below in conjunction with embodiments of the present disclosure and accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present disclosure, but not all of them. Based on the embodiments of the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present disclosure.
• The technical solutions disclosed by various embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.
• First, a semiconductor processing chamber involved in the related art is introduced.
• As shown inFIG.1, an opening is provided at a top of achamber2. Ahousing1 is provided above the opening. Adielectric window9 is provided on thehousing1 and above the opening. At the same time, afirst sealing ring3 for sealing is arranged between thebracket assembly1A and thedielectric window9.
• Ahot air hood8′ is located between thedielectric window9 and an inner top wall of thehousing1, and is fixedly attached to thedielectric window9 when being pressed by the inner top wall of thehousing1. Acoil4 is also disposed at thehousing1 and is arranged on the inner top wall of thehousing1.
• As shown inFIGS.1 to3, two ends of anair passage6′ are respectively provided with anair exchange port61′ and atransfer port62′. Theair exchange port61′ is used to take in a hot air from the outside. Thetransfer port62′ is inserted on the top wall of thehousing1, and is located above theair passage port8A′ opened on ahot air hood8′, such that an external hot air can be passed into aheating compartment8C′ from theair exchange port61′, thereby facilitating thehot air hood8′ to heat thedielectric window9 through theheating compartment8C′.
• As shown inFIG.2, asecond sealing ring7′ is provided between thetransfer port62′ and thehot air hood8′. In a normal state, an end of thetransfer port62′ and the inner top wall of thehot air hood8′ are clamped against thesecond sealing ring7′, such that thesecond sealing ring7′ is compressed and deformed, thereby forming a seal on theheating compartment8C′.
• The above-described device has two main problems. The first problem is that thehot air hood8′ is clamped by thehousing1 and thedielectric window9, thereby being fixedly attached to thedielectric window9. As a result, while thehousing1 is pressed against thehot air hood8′, thehot air hood8′ exerts a reaction force on thehousing1 as shown inFIG.4, thereby pressing the inner top wall of thehousing1 into deformation, and subsequently causing thecoil4 disposed at the inner top wall of thehousing1 to deform. Thus, a distribution structure of thecoil4 disposed at the inner top wall of thehousing1 is changed, thereby affecting uniform distribution of ions and free radicals in a plasma.
• The second problem is that thechamber2 needs to be vacuumed during operation, such that a pressure difference can be formed between an upper portion and a lower portion of thedielectric window9. The pressure difference causes a downward pressure on thedielectric window9, thereby compressing thefirst sealing ring3 into deformation, and causing thedielectric window9 itself to deform inward. The deformation of thefirst sealing ring3 and thedielectric window9 will be superimposed on each other, which causes thehot air hood8′ to sink downward, and subsequently causes thehot air hood8′ to be separated from thetransfer port62′ as shown inFIG.3. Thus, thesecond sealing ring7′ is no longer able to seal theheating compartment8C′.
• Both problems cause the semiconductor processing chamber to fail to operate normally, thereby unable to etch an integrated circuit normally. The semiconductor processing chamber provided by the embodiments of the present disclosure is an improvement made to solve one or more existing problems. The semiconductor processing chamber provided by the embodiments of the present disclosure will be described in detail below.
• As shown inFIG.5, the semiconductor processing chamber provided by the embodiments of the present disclosure includes achamber2 and ahousing1. An opening is provided at a top of thechamber2. Thehousing1 is arranged to cover the opening. Thehousing1 includes abracket assembly1A and acoil bracket plate1B. Thecoil bracket plate1B forms a top wall of thehousing1, and thebracket assembly1A forms a peripheral wall of thehousing1. That is, thebracket assembly1A is ring-shaped, and is arranged around a periphery or rim of an end surface of thecoil bracket plate1B. A bottom surface of thecoil bracket plate1B faces toward thechamber2 and constitutes an inner top wall of thehousing1. Thebracket assembly1A and thecoil bracket plate1B may be arranged integrally, or may be assembled together by means of bolts, rivets, welding, bonding, and the like.
• The semiconductor processing chamber further includes adielectric window9 disposed inside thehousing1 above the opening of thechamber2 to block the opening. In some embodiments, a stepped surface may be provided on thebracket assembly1A, such that stepped holes including a large hole and a small hole can be formed inside thebracket assembly1A. Thebracket assembly1A is arranged above thechamber2. Thebracket assembly1A includes the small hole with a diameter smaller than a diameter of thedielectric window9, and the large hole with a diameter greater than the diameter of thedielectric window9, such that a lower end surface of thedielectric window9 can be placed on a step surface of thebracket assembly1A, and thedielectric window9 can provide an insulation space between its upper and lower end surfaces. In addition, thebracket assembly1A is disposed between thecoil bracket plate1B and thechamber2 such that thecoil bracket plate1B and thechamber2 are separated from each other. Thechamber2 is sealed by providing thefirst sealing ring3 between the lower end surface of thedielectric window9 and the stepped surface of thebracket assembly1A.
• As shown inFIG.5 andFIG.6, the semiconductor processing chamber provided by the embodiments of the present disclosure further includes thecoil4 and ahot air hood8. Thecoil4 is disposed at the inner top wall of thehousing1, that is, the bottom surface of thecoil bracket plate1B. Thehot air hood8 is located inside thehousing1, and thehot air hood8 is fixedly attached to thedielectric window9. For example, thehot air hood8 is fixedly attached to thedielectric window9 by means of welding and bonding, etc. At the same time, a clearance gap O is provided between the inner top wall (the bottom surface of thecoil bracket plate1B) of thehousing1 and thehot air hood8 to prevent deformation and rupture of thecoil bracket plate1B caused by mutual compression between the inner top wall of thehousing1 and thehot air hood8. In some embodiments, an orthogonal projection of thecoil4 on thedielectric window9 is located outside thehot air hood8, that is, thecoil4 is arranged along the periphery or rim of the bottom surface of thecoil bracket plate1B.
• As shown inFIG.5 andFIG.10, thehot air hood8 includes aheating compartment8C for heating thedielectric window9 and at least twoair passage ports8A that are connected to theheating compartment8C and are used for taking air into and discharging air out of theheating compartment8C. In some embodiments, every twoair passage ports8A may be formed into a group, and one of the twoair passage ports8A in each group is used for taking in the air, and the other is used for discharging the air. At least one group of the twoair passage ports8A is provided inside thehot air hood8.
• As shown inFIG.5,FIG.7, andFIG.9, the semiconductor processing chamber provided by the embodiments of the present disclosure also includes an air distribution structure, which is fixedly connected to thehousing1 and includes a plurality ofair passages6. The plurality ofair passages6 include at least twoair exchange ports61 and at least twotransfer ports62. The at least twoair exchange ports61 are located outside thehousing1 for air intake and air discharge. The at least twotransfer ports62 are located inside thehousing1. A number of thetransfer ports62 is the same as a number of theair passage ports8A. Thetransfer ports62 are respectively connected to theair passage ports8A. In this way, theheating compartment8C of thehot air hood8 is connected to the outside through the plurality ofair passages6, thereby facilitating circulation of the hot air. In some embodiments, if twoair passage ports8A form a group, thetransfer ports62 of the plurality ofair passages6 also forms a group of two. The number of groups of thetransfer ports62 arranged in the semiconductor processing chamber is the same as the number of groups of theair passage ports8A arranged in the semiconductor processing chamber, and they are arranged in one-to-one correspondence. One of thetransfer ports62 in each group arranged in the semiconductor processing chamber is used to take air into theheating compartment8C, and the other is used to discharge air out of theheating compartment8C.
• In some embodiments, as shown inFIG.5, the semiconductor processing chamber provided by the embodiments of the present disclosure further includes afixture5. Thefixture5 is located at a top surface of thecoil bracket plate1B, and is located between the air distribution structure and thecoil bracket plate1B. The air distribution structure is fixedly attached to thecoil bracket plate1B through thefixture5.
• When the semiconductor processing chamber is in operation, it is necessary to vacuumize thechamber2, and at the same time, the hot air is passed into theheating compartment8C through theair exchange ports61 of the plurality ofair passages6 for air intake and thetransfer ports62 of the plurality ofair passages6 for air discharge. After the hot air fully exchanges heat with thedielectric window9 in theheating compartment8C, the hot air is then discharged sequentially through thetransfer ports62 of the plurality ofair passages6 for air intake and theair exchange ports61 of the plurality ofair passages6 for air discharge, such that the hot air is periodically taken in and discharged out to facilitate the heating of thedielectric window9.
• Further, because thehot air hood8 is directly fixed on thedielectric window9, there is no need to apply a pre-tightening force to thehot air hood8 by means of thehousing1. At the same time, through configuring the clearance gap O between thehot air hood8 and the inner top wall (bottom surface of thecoil bracket plate1B) of thehousing1, the reaction force of thehot air hood8 on theshell1 is avoided, thereby preventing thecoil bracket plate1B from being deformed by the compression of thehot air hood8, ensuring structural stability of thecoil4, improving the uniform distribution of ions and free radicals in the plasma, and ensuring the normal operation of the semiconductor processing chamber.
• Further, as shown inFIG.6 andFIG.9, the air distribution structure includes at least two plug-inconnectors63. Each plug-inconnector63 includes atransfer port62. The at least two plug-inconnectors63 can be inserted into correspondingair passage ports8A to connect between thetransfer ports62 and correspondingair passage ports8A. A sealingring7 is provided between an outer wall of the plug-inconnector63 and an inner wall of theair passage port8A. In this way, a connection between thetransfer port62 and theair passage port8A can be sealed circumferentially through the sealingring7.
• As shown inFIG.6 andFIG.9, when the semiconductor processing chamber is in a normal state, the sealingring7 is at a second line position Q of theair passage port8A, that is, the plug-inconnector63 contacts with theair passage port8A at the second line position Q through the sealingring7. When the semiconductor processing chamber is in operation, as thechamber2 is vacuumed, thedielectric window9 will be depressed and thefirst sealing ring3 will be compressed and deformed. Then, thehot air hood8 will sink, that is, thehot air hood8 is lowered to a certain height relatively to the plug-inconnector63. At this point, the sealingring7 will be located at a first line position P of theair passage port8A, and the plug-inconnector63 contacts with theair passage port8A at the first line position P through the sealingring7. It can be seen that although thehot air hood8 sinks as thechamber2 is vacuumed, because the plug-inconnector63 and theair passage port8A are coupled through plug-in, and the connection between thetransfer port62 and theair passage port8A is sealed by a circumferential sealing method, this makes the plug-inconnector63 consistently keep in contact with theair passage port8A through the sealingring7, thereby avoiding vacuum failure.
• Compared with the end surface sealing method shown inFIG.2, the circumferential sealing method between the plug-inconnector63 and theair passage port8A prevents thehot air hood8 from pushing thetransfer port62 at the position of theair passage port8A and avoids the compression force pressed by thehot air hood8 against thecoil bracket plate1B through the air distribution structure, thereby further preventing thecoil bracket plate1B from being compressed and deformed by thehot air hood8.
• Further, as shown inFIG.7 andFIG.9, to facilitate the plug-in insertion between thetransfer port62 and theair passage port8A, the outer wall of the plug-inconnector63 and the inner wall of theair passage port8A may be chamfered or may be rounded. These treatments will not be described in detail herein.
• In some embodiments, as shown inFIG.7 andFIG.8, the outer wall of the plug-inconnector63 is provided with anannular dovetail groove64 surrounding its circumference. The sealingring7 is arranged partly in theannular dovetail groove64. The sealingring7 extends partly out of theannular dovetail groove64 and pushes against the inner wall of theair passage port8A. In this way, the sealingring7 can be fixedly attached to the plug-inconnector63, and can combine with the plug-inconnector63 to become one piece to be plugged into thehot air hood8, making it easy to assemble. At the same time, when performing a sealing function, the sealingring7 will be compressed and deformed by the compression force from both the plug-inconnector63 and theair passage port8A. Theannular dovetail groove64 can be designed to fully accommodate the compressed portion of the sealingring7, and prevent thesealing ring7 from being damaged and degrading the sealing function. At the same time, to further strengthen the sealing function, the sealingring7 may be an O-shaped sealing ring to couple with theannular dovetail groove64.
• In some embodiments, as shown inFIG.5 andFIG.6, a boss may be configured at a top surface of thehot air hood8. Theair passage port8A is connected to theheating compartment8C through the top surface of the boss. The clearance gap O is provided between the top surface of the boss and the inner top wall (i.e., the bottom surface of thecoil bracket plate1B) of thehousing1. The provision of the boss may increase an overall height of theair passage port8A, and may increase a coupling length between theair passage port8A and the plug-inconnector63, such that both can fully contact without separation when a relative movement occurs, and can further avoid failure of the sealing function. For example, a size of the clearance gap O is not less than 0.5 mm to avoid the compression force on thehousing1.
• In some embodiments, as shown inFIG.5 andFIG.10, thehot air hood8 and thedielectric window9 are connected. Thehot air hood8 includes a hood body and a connectingmember8B disposed at an outer wall of the hood body. The hood body is fixedly attached to thedielectric window9 through the connectingmember8B. Here, the connectingmember8B and thedielectric window9 may be connected in a snap-on manner. For example, the connectingmember8B may be a snap-on structure such as a hook or a claw. Alternatively, the connectingmember8B may also be a slot. Thedielectric window9 is configured with an adapting hook on the top. The hood body is connected to thedielectric window9 through snapping the adapting hook onto the slot. In another example, the connectingmember8B may also be exterior threads arranged on an outer wall of the hood body. Thedielectric window9 is configured with a threaded hole. Interior threads of the threaded hole match the exterior threads, and the connectingportion8B is fixedly attached to thedielectric window9 through threaded connection.
• In some embodiments, the semiconductor processing chamber includes the following configuration. A hood opening is configured at the bottom of the hood body. An inner wall of the hood body and the top surface of thedielectric window9 are enclosed to form theheating compartment8C. A flanging is configured at a surrounding edge of the cover body located at the hood opening facing the outside of theheating compartment8C. The flanging is the connectingmember8B. In some other embodiments, bolt through-holes are evenly distributed in a ring-shaped array on the flanging. Thedielectric window9 is configured with threaded holes corresponding to the bolt through-holes. External bolts pass through the bolt through-holes to connect to the threaded holes through threads to attach the hood body to thedielectric window9.
• In some embodiments, as shown inFIG.5 andFIG.10, theheating compartment8C may include a plurality of heating sub-compartment8C1 separated from each other. Each heating sub-compartment8C1 is connected to twoair passage ports8A, that is, twoair passage ports8A form a group. The twoair passage ports8A in each group are connected to a same heating sub-compartment8C1. Theair passage ports8A connected to different heating sub-compartments8C1 are different. One of the twoair passage ports8A connected to the same heating sub-chamber is an air inlet for air intake, and the other of the twoair passage ports8A connected to the same heating sub-compartment8C1 is an air outlet for air discharge. For example, multiple heating sub-compartments8C1 may be arranged in thehot air hood8 in a linear array or a circular array. Feeding hot air into multiple heating sub-compartments8C1 at the same time makes the heating of thedielectric window9 by thehot air hood8 more rapid and more uniform, which is beneficial to the operation of the semiconductor processing chamber.
• In some embodiments, the layout of multiple heating sub-compartments8C1 may be as follows. As shown inFIG.10, theheating compartment8C includes a plurality of concentric ring-shaped compartments and apartition plate8E extending in a radial direction of the plurality of concentric ring-shaped compartments. Thepartition plate8E symmetrically divides each ring-shaped compartment into two half ring-shaped compartments. The half ring-shaped compartments are the heating sub-compartments8C1. The air inlet and the air outlet connected to the same heating sub-compartment8C1 are located at both ends of the same heating sub-compartment8C1, such that the hot air entering the heating sub-compartment8C1 can flow from one end of the heating sub-compartment8C1 to the other end of the heating sub-compartment8C1. The hot air passing into the heating sub-compartment8C1 can fully exchange heat with thedielectric window9 before being discharged. At the same time, interference due to close proximity between the air inlet and the air outlet may also be avoided. At the same time, thepartition plate8E not only separates the ring-shaped compartments, but also serves as a reinforcing rib to reinforce thehot air hood8.
• Further, as shown inFIG.10, a first pressure release hole8D1 is configured between two adjacent heating sub-compartments8C1 with different diameters to facilitate connection between two adjacent heating sub-compartments8C1 with different diameters, and to ensure consistency of air pressures between each other. At the same time, the heating sub-compartment8C1 with the smallest diameter is configured with a second pressure release hole8D2 connected to the outside of theheating compartment8C, such that the second pressure release hole8D2 and the first pressure release hole8D1 are coordinated to connect between the inside and the outside of thehot air hood8, such that the air pressures inside and outside the heating sub-compartments8C1 are kept balanced.
• In some embodiments, as shown inFIG.5, thehot air hood8 is configured with a through-hole, and an axis of the through-hole is coaxial with a central axis of thehot air hood8. In some other embodiments, the hood body of thehot air hood8 is annular-shaped. The through-hole is a ring hole of the annular hood body. One end of anozzle10 sequentially passes through the through-hole and thedielectric window9 into thechamber2. The other end of thenozzle10 extends through thecoil bracket plate1B to the outside of the semiconductor processing chamber. The second pressure release hole8D2 is connected to the through-hole to facilitate more effective pressure release and to more effectively ensure an air pressure balance inside and outside each heating sub-compartment8C1.
• In some embodiments, as shown inFIG.11, the number ofair passages6 is four. Two air passages areair intake passages6A. The other two air passages are air discharge passages6B. The twoair intake passages6A are respectively arranged on both sides of thepartition plate8E. The two air discharge passages6B are also respectively arranged on both sides of thepartition plate8E. Eachair intake passage6A and each air discharge passage6B both have twotransfer ports62. Eachair intake passage6A and each air discharge passage6B both have theair exchange port61.
• The twotransfer ports62 of eachair intake passage6A are respectively connected to inlets of two adjacent heating sub-compartments8C1 located on the same side of thepartition plate8E. The twotransfer ports62 of each air discharge passage6B are respectively connected to outlets of two adjacent heating sub-compartments8C1 located on the same side of thepartition plate8E. For example, as shown inFIG.10, theheating compartment8C includes two annular compartments, and is divided into four heating sub-compartments8C1 by thepartition plate8E. Both ends of each heating sub-compartment8C1 are respectively configured with oneair passage port8A, which serves as the air inlet and the air outlet. A total of 8air passage ports8A are arranged in two rows and symmetrically arranged on both sides of thepartition plate8E. For the two adjacent heating sub-compartments8C1 with different diameters located on the same side of thepartition plate8E, the air inlets of the two are connected to the twotransfer ports62 of theair intake passage6A located on the same side of thepartition plate8E. The air outlets of the two are connected to the twotransfer ports62 of the air discharge passage6B located on the same side of thepartition plate8E. In this way, the twoair passages6 located on the same side of thepartition plate8E are arranged in pairs, such that the air intake and the air discharge of the two heating sub-compartments8C1 on the same side of thepartition plate8E can be facilitated simultaneously. That is, theair intake passage6A, the air discharge passage6B, and the two heating sub-compartments8C1 located on the same side of thepartition plate8E form a first air passage. Theair intake passage6A, the air discharge passage6B, and the two heating sub-compartments8C1 located on the other side of thepartition plate8E form a second air passage. Both the first air passage and the second air passage are arranged along an extending direction of thepartition plate8E. Thus, the structure of the air passages can be simplified, and the manufacturing cost can be better controlled.
• In some embodiments, as shown inFIG.7, the air passage structure is a split structure including four “F”-shaped passage structures. Each “F”-shaped passage structure is configured with oneair passage6. Theair passage6 includes twotransfer ports62 and oneair exchange port61. The air passage structure may also be an integral structure, which is not particularly limited in the embodiments of the present disclosure.
• Further, as shown inFIG.11, theair exchange ports61 of the twoair intake passages6A are used to connect to the air outlet of a first heater G1 and the air outlet of a second heater G2 respectively. Theair exchange ports61 of the two air discharge passages6B are used to connect to the air inlet of the first heater G1 and the air inlet of the second heater G2 respectively. When in operation, the first heater G1 passes the hot air into the two heating sub-chambers8C1 connected to the first air passage through theair intake passages6A of the first air passage. After the hot air fully exchanges heat with thedielectric window9 in the heating sub-chamber8C1, the hot air drops to a normal temperature, discharges from the air discharge passage6B of the first air passage, and enters the second heater G2. The air at the normal temperature is heated again in the second heater G2 to become the hot air. The hot air passes into the two heating sub-chambers8C1 connected to the second air passage through theair intake passages6A of the second air passage. After the hot air fully exchange heat with thedielectric window9 in the heating sub-chamber8C1, the hot air drops to the normal temperature again, discharges from the air discharge passage6B of the second air passage, and enters the first heater G1. As such, the first heater G1, the first air passage, the second heater G2, and the second air passage are connected end to end to form a circular heating loop, such that each heating sub-chamber8C1 is continuously fed with the hot air to heat thedielectric window9. Thus, the heating process is more reasonable and effective.
• In some embodiments, both the first heater G1 and the second heater G2 include high-temperature electrodes, that is, generate the hot air through electric heating.
• In the embodiments of the present disclosure, through directly fixing the hot air hood on the dielectric window, and configuring the clearance gap between the hot air hood and the inner top wall of the housing, the compression between the hot air hood and the housing can be avoided. The deformation of the inner top wall of housing caused by the compression between the hot air hood and the housing and the subsequent change of the coil distribution structure can be avoided. Thus, the uniform distribution of the ions and free radicals in the plasma is ensured.
• The embodiments of the present disclosure are described by focusing on the differences between the various embodiments. As long as different optimization features of various embodiments do not contradict each other, they can be combined to form more desired embodiments. For brevity of the specification, further description is omitted herein.
• The above descriptions are only examples of the present disclosure, and are not intended to limit the present disclosure. Various modifications and changes of the present disclosure will occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included within the scope of the claims of the present disclosure.

Claims (12)

1. A semiconductor processing chamber, comprising:

a chamber having an opening at a top of the chamber;

a housing disposed above the opening;

a dielectric window disposed inside the housing and above the opening;

a coil arranged circumferentially at an inner top wall of the housing;

a hot air hood disposed inside the housing and fixedly attached to the dielectric window, wherein the hot air hood and the inner top wall of the housing are separated by a clearance gap, and the hot air hood includes a heating compartment for heating the dielectric window and at least two air passage ports connected to the heating compartment; and

an air distribution structure being fixedly attached to the housing and including a plurality of air passages, at least two air exchange ports located outside the housing for air intake and air discharge, and at least two transfer ports located inside the housing and respectively connected to the at least two air exchange ports, wherein equal numbers of exchange ports and transfer ports are connected to each other in a one-to-one correspondence.

2. The semiconductor processing chamber according toclaim 1, wherein:

the hot air hood includes a hood body and a connecting member disposed at an outer wall of the hood body, and the hood body is fixedly attached to the dielectric window through the connecting member.

3. The semiconductor processing chamber according toclaim 2, wherein:

a hood opening is configured at a bottom of the hood body, an inner wall of the hood body and a top surface of the dielectric window are enclosed to form the heating compartment, and a flanging is configured at a surrounding edge of the hood body located at the hood opening facing the outside of the heating compartment, and the flanging is the connecting member.

4. The semiconductor processing chamber according toclaim 1, wherein:

the air distribution structure includes at least two plug-in connectors, each plug-in connector includes a transfer port, the plug-in connector is inserted into an air passage port to connect between the transfer port and the air passage port, and a sealing ring is configured between an outer wall of the plug-in connector and an inner wall of the air passage port to seal the air passage port.

5. The semiconductor processing chamber according toclaim 4, wherein:

the outer wall of the plug-in connector is configured with an annular dovetail groove surrounding its circumference, the sealing ring is arranged partly in the annular dovetail groove, the sealing ring extends partly out of the annular dovetail groove and pushes against the inner wall of the air passage port.

6. The semiconductor processing chamber according toclaim 1, wherein:

the heating compartment includes a plurality of heating sub-compartment separated from each other, each heating sub-compartment is connected to two air passage ports, the air passage ports connected to different heating sub-compartments are different, one of the two air passage ports connected to the same heating sub-compartment is an air inlet for air intake, and the other of the two air passage ports connected to the same heating sub-compartment is an air outlet for air discharge.

7. The semiconductor processing chamber according toclaim 6, wherein:

the heating compartment includes a plurality of concentric ring-shaped compartments and a partition plate extending in a radial direction of the plurality of concentric ring-shaped compartments, the partition plate symmetrically divides each ring-shaped compartment into two half ring-shaped compartments, the half ring-shaped compartments are the heating sub-compartments, and the air inlet and the air outlet connected to the same heating sub-compartment are located at both ends of the same heating sub-compartment.

8. The semiconductor processing chamber according toclaim 6, wherein:

a first pressure release hole is configured between two adjacent heating sub-compartments with different diameters to facilitate connection between two adjacent heating sub-compartments with different diameters, and the heating sub-compartment with the smallest diameter is configured with a second pressure release hole connected to the outside of the heating compartment.

9. The semiconductor processing chamber according toclaim 6, wherein:

the number of air passages is four, two air passages are air intake passages, the other two air passages are air discharge passages, the two air intake passages are respectively arranged on both sides of the partition plate, the two air discharge passages are also respectively arranged on both sides of the partition plate, each air intake passage and each air discharge passage both have two transfer ports, and each air intake passage and each air discharge passage both have the air exchange port;

the two transfer ports of each air intake passage are respectively connected to inlets of two adjacent heating sub-compartments located on the same side of the partition plate; and

the two transfer ports of each air discharge passage are respectively connected to outlets of two adjacent heating sub-compartments located on the same side of the partition plate.

10. The semiconductor processing chamber according toclaim 9, wherein:

the air exchange ports of the two air intake pipes are used to connect to the air outlet of a first heater and the air outlet of a second heater, respectively; and

the air exchange ports of the two air discharge passages are used to connect to the air inlet of the first heater and the air inlet of the second heater, respectively.

11. The semiconductor processing chamber according toclaim 1, wherein:

a boss is configured at a top surface of the hot air hood, the air passage port is connected to the heating compartment through a top surface of the boss, and the clearance gap is configured between the top surface of the boss and the inner top wall of the housing.

12. (canceled)

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