US20240055407A1

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Publication number: US20240055407A1
Application number: US18/366,569
Authority: US
Inventors: Thomas Workman; Belgacem Haba
Original assignee: Adeia Semiconductor Bonding Technologies Inc
Current assignee: Adeia Semiconductor Bonding Technologies Inc
Priority date: 2022-08-11
Filing date: 2023-08-07
Publication date: 2024-02-15
Also published as: WO2024035717A1; TW202425238A

Abstract

A bonded structure for debugging integrated circuit devices and a method for debugging integrated circuit devices is disclosed. The bonded structure may comprise a debugging element and an integrated circuit device. The debugging element may comprise a debugging circuitry. The debugging element may be bonded to an integrated circuit device. The debugging element may be configured to debug the integrated circuit device.

Description

RELATED APPLICATIONS

This application claims the priority benefit of U.S. Provisional Patent Application 63/371,195 filed on Aug. 11, 2022, entitled “BONDED DEBUGGING ELEMENTS FOR INTEGRATED CIRCUITS AND METHODS FOR DEBUGGING INTEGRATED CIRCUITS USING SAME,” which is incorporated by reference herein in its entirety.

BACKGROUNDField of the Invention

The field relates to bonded debugging devices for integrated circuit chips, in particular bonded debugging elements that include debugging circuitry.

Description of the Related Art

Semiconductor devices, in particular system on a chip (SoC) devices, have increased in complexity while also decreasing in size and dimension. As SoC devices and other integrated circuit (IC) devices become more complex, the importance of debugging the SoC devices increases. However, it can be challenging to provide a debugging system that adequately debugs important functionalities of SoC and IC devices without the use of expensive high-speed logic and high-priced adapters to connect to denser SoC and IC chip packages. Accordingly, there exists a continuing demand for improved debugging devices, circuitries, and processes.

SUMMARY

For purposes of summarizing the disclosure and the advantages achieved over the prior art, certain objects and advantages of the disclosure are described herein. Not all such objects or advantages may be achieved in any particular embodiment. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of the preferred embodiments having reference to the attached figures, the invention not being limited to any particular preferred embodiment(s) disclosed.

In one embodiment, an integrated circuit device can include: a first active circuitry in a device portion of the integrated circuit device; a first non-conductive layer over the device portion, the first non-conductive layer at least partially defining a direct bonding surface of the integrated circuitry device; and a trace line connected to the first active circuitry and extending at least partially into the first non-conductive layer, wherein the trace line is configured to provide electrical communication between the first active circuitry and a debugging chip, the trace line terminating at or below the direct bonding surface.

In another embodiment, a bonded structure can include: the integrated circuit device; the bonded structure can further include a debugging element directly bonded to the integrated circuit device; wherein a first non-conductive layer of the integrated circuit device is directly bonded to a second non-conductive layer of the debugging element without an intervening adhesive; and wherein a first contact feature of the integrated circuit device is directly bonded to a second contact feature of the debugging element without an intervening adhesive.

In some embodiments, the debugging chip can be configured to debug the first active circuitry. In some embodiments, the debugging element includes a debugging circuitry. In some embodiments, the debugging circuitry can include a memory circuitry. In some embodiments, the second contact feature may not be in electrical communication with the first active circuitry. In some embodiments, the trace line can be electrically inactive. In other embodiments, the trace line can be further configured to connect to electrical power or ground.

In another embodiment, a bonded structure can include: an integrated circuit device having first active circuitry; and a debugging element comprising debugging circuitry, the debugging element directly bonded to the integrated circuit device without an adhesive along a bonding interface; wherein the debugging circuitry is configured to debug logic of first active circuitry of the integrated circuit device.

In some embodiments, the debugging element can include a chip. In some embodiments, the bonded structure can include a first non-conductive bonding layer of the integrated circuit device which can be directly bonded to a second non-conductive bonding layer of the debugging element without an intervening adhesive; and wherein a first contact feature of the integrated circuit device is directly bonded to a second contact feature of the debugging element without an intervening adhesive. In some embodiments, the bonded structure can include a majority of the first and second contact features can be configured to debug at least a portion of the first active circuitry of the integrated circuit device. In some embodiments, the bonded structure can include debugging at least a portion of the first active circuitry by: probing the first active circuitry so as to produce a one or more signals from the first active circuitry; collecting the one or more signals; storing the one or more signals; and analyzing the one or more signals. In some embodiments the debugging circuitry can be configured to transmit one or more signals to the first active circuitry. In some embodiments, the one or more signals can probe one or more portions of the first active circuitry. In some embodiments, the first active circuitry can emit one or more return signals such that the one or more return signals are conveyed from the first active circuitry to the debugging circuitry and the debugging circuitry is configured to analyze or store the one or more return signals. In some embodiments, the debugging circuitry can be configured to manipulate the one or more return signals.

In another embodiment, a method for debugging an integrated circuit device is disclosed. The method can include: directly bonding a debugging element to an integrated circuit device without an adhesive, the integrated circuit device comprising first active circuitry and the debugging element comprising a debugging circuitry; transmitting one or more signals from the debugging element to the first active circuitry; emitting one or more return signals from the active circuitry; conveying the one or more return signals from the active circuitry to the debugging circuitry; and storing the one or more return signals in the debugging circuitry.

In some embodiments, the method can include removing the debugging element from the integrated circuit device. In some embodiments, the method can further include removing the debugging element is performed by chemical mechanical polishing. In some embodiments, the method can include depositing a non-conductive layer on a surface of the integrated circuit device after removing the debugging element. In some embodiments, the method can include analyzing the one or more return signals. In some embodiments, the method can include manipulating the one or more return signals.

In another embodiment, a debugging chip can include: a debugging circuitry, wherein the debugging circuitry is configured to debug the circuitry of an element directly bonded to the debugging chip, wherein debugging the circuitry of the element comprises analyzing signals emitted from the element; and a bonding layer configured for direct hybrid bonding without an adhesive, the bonding layer comprising a non-conductive bonding layer and a plurality of contact features at least partially embedded within the non-conductive bonding layer.

In some embodiments, the debugging chip can be directly bonded to an integrated circuit device, without an adhesive, and wherein the integrated circuit device comprises an active circuitry. In other embodiments, the debugging circuitry can be configured to probe the active circuitry of the integrated circuit device. In some embodiments, the debugging circuitry can be configured to store signals produced from the active circuitry of the integrated circuit device. In some embodiments, the debugging circuitry can be configured to manipulate signals produced from the active circuitry of the integrated circuit device. In some embodiments, the debugging circuitry can be configured only to debug the circuitry of the element. In some embodiments, the debugging circuitry can be at least 50% of all circuitry of the debugging chip. In some embodiments, the debugging circuitry can be at least 90% of all circuitry of the debugging chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG.1 is a schematic view showing conventional debugging circuitries integrated in SoC devices.

FIG.2A a is a schematic side view of a debugging circuitry embedded in an IC element.

FIG.2B is a schematic side view of a debugging circuitry outside of an IC element in a debugging chip, according to one embodiment.

FIG.2C is a schematic side sectional view of an IC device configured for direct bonding, according to one embodiment.

FIG.2D is a schematic side sectional view of a debugged IC device, according to one embodiment.

FIG.2E is a schematic side sectional view of an IC device, according to another embodiment.

FIG.3 is a schematic view of an IC device with direct bonding pads, according to another embodiment.

FIG.4A is a schematic cross-sectional side view of two elements prior to direct hybrid bonding.

FIG.4B is a schematic cross-sectional side view of a bonded structure including the two elements shown inFIG.4A after direct hybrid bonding.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present disclosure may be understood by reference to the following detailed description. It is noted that, for purposes of illustrative clarity, certain elements in various drawings may not be drawn to scale, may be represented schematically or conceptually, or otherwise may not correspond exactly to certain physical configurations of embodiments.

Embodiments relate to debugging elements for integrated circuit (IC) devices, e.g., system on a chip (SoC) devices. The debugging elements (e.g., debugging chips) of this disclosure may reduce the area of the IC or SoC devices that is used to perform debugging functions. This may be attributed to the debugging circuitries (e.g., debugging chips) being bonded to a suitable surface of the IC device, as opposed to being embedded within the chip (e.g., an IC device) to be tested. As explained herein, the debugging chips can be provided in a separate chip or chiplet that is directly bonded to an IC device, which can comprise a chip to be debugged.

Conventionally, debugging circuitries are widely used to debug IC devices using as small an area as possible. Generally, debugging circuitries (e.g., in-circuit emulators) are used to develop and debug the designs of IC devices. In particular, in conventional systems, embedded debugging circuitries are permanently part of the device which they are designed to debug. As a result, embedded debugging circuitries having a smaller footprint is advantageous, as they take up part of the IC device's footprint. While efforts have been made to place entire emulators with breakpoints and tracing capabilities on a debugging chip, the cost of such a chip using conventional technologies is prohibitively high. In particular, in complex chip design (e.g., Field Programmable Gate Arrays (FFPGA)) significant chip area may be devoted when using embedded debugging circuits. This large footprint may be caused by debugging circuitries used for identifying points to tapping into electronic signals, creation of these tapping points, connection of the FFPGA's chip memory to store electronic signals from the debugging circuitries, as well as separate logic circuits to trigger the start of storage and the offloading of this stored data. Due to the large amount of space used for these debugging circuitries, the number of connection points may be very limited. Moreover, after conventional debugging is completed, mass produced chips likely will still contain the debugging circuitry that is no longer useful. Previous attempts at off-chip debugging packages have relied on micro-bump chip interconnects of relatively low density. Using micro-bump chip interconnects may cause the debugging features of the package to suffer from speed limitations in complex devices, as the signals from the debugging package is routed over long distances to reach the proper device interconnects. Therefore, there is a need for a debugging chip with high functionality (e.g., a debugging circuitry that allows for debugging of complex systems like FFPGAs and other chips) that can quickly and efficiently debug complex devices without occupying large areas of the devices and which may be removed after initial design debugging is complete.

Various embodiments disclosed herein can utilize debugging chips which include a debugging circuitry. In some embodiments, the debugging chip may be bonded to the surface of an IC element (e.g., a chip or SoC). In some embodiments, the debugging chip may be bonded to conductive contact features (e.g., contact pads) on an IC element (e.g. a chip or SoC). In some embodiments, the pads on the IC element may be connected to a high density of tapping lines. In some embodiments, the debugging may occur on sample IC elements prior to mass-market production, and the debugging chip may not be part of the final mass-market product.

FIG.1 is a schematic view of an IC device with a conventional in-device debugging circuitry102 (e.g., one or more debugging logic blocks). On chip debugging is commonly used in the developmental stage of IC devices. In general, debuggingcircuitry102, which may include a processing circuitry and/or a memory circuitry that stores software instructions that may be executed by the processing circuitry, allow developers a method for debuggingIC device circuitries104, which may include processing circuitries and memory circuitries, the memory circuitries configured to store software instructions that may be executed by the processing circuitries. As schematically shown, when debugging circuitry is included in the chip, the debugging circuitry interface to the live hardware is provided by additional blocks within the device's processor. Because the debugging circuitry andsoftware102 is built into the original device circuitries andsoftware104, they are generally not removed after initial debugging due to the danger of changing IC internal circuitries after testing but before mass production. However, leaving thisunused debugging circuitry102, which is no longer used in the mass-produced product, may needlessly increase the footprint of the device system while unnecessarily providing hackers and other third parties unwanted access (e.g., a backdoor) to the IC device. Because larger device footprints lead to lower device yields and backdoors endanger the safety and usefulness of IC devices, there is a motivation to remove as muchunneeded debugging circuitry102 as possible in final mass-produced device.

Hardware and software debugging in conventional IC devices (e.g., chips) is generally performed in different layers. Modern IC devices often feature multiple processor cores and blocks for graphics, application acceleration, high-speed, low speed, and general peripherals. The blocks may be connected through a hierarchy of SoC interconnects, and the chip may be connected to a printed circuit board. Conventionally, validation, and/or debugging, is performed by designers using transaction level simulation in virtual prototypes. Acceleration and/or emulation may also be useful, as well as graphics-based prototyping. Debugging itself may be performed in layers. Firstly, the hardware of a chip may be debugged and/or verified, this may be performed on individual IP blocks, subsystems, as well as on the actual SoC. Similarly, bare metal software executing at the lowest level of extraction may also be verified by debugging circuitries. More complex systems may also be debugged by debugging circuitries. For instance, debugging circuitries may also be used to debug and verify the operating system, including specific functions and/or package interfaces that are proved by the operating systems. Debugging circuitries may also validate key parameters, like performance and power on upper levels of the circuitry. Importantly, debugging circuitries may be designed to test application scenarios such as usage and/or power needs of the system and/or system interface. As such, debugging of complex systems may validate all or some of the functionalities of a SoC or other device, including the base hardware to top level operating system functionalities.

FIGS.2A-E illustrate schematic representations of debugging circuitries and devices.FIG.2A illustrates a conventional embedded debugging circuitry ordevice210. In conventional embeddeddebugging circuitries210, the embeddeddebugging circuitry210 can be embedded into theIC device212. For example, thedebugging circuitry210 can be patterned into a semiconductor die that comprises theIC device212. As such, this embeddeddebugging circuitry210 has a high degree of functionality (e.g., it may debugIC212 devices), but the embeddeddebugging circuitry210 may also take up a portion of the space of theIC device212. Moreover, inIC devices212, the embeddeddebugging circuitry210 may be complex and/or expensive to make. Moreover, once theIC device212 is verified (e.g., tested and debugged) and mass-produced, embeddeddebugging circuitry210 cannot be removed from theIC device212 architecture.

FIG.2B illustrates a schematic representation ofdebugging chip230 directly bonded to anIC device212 without an adhesive. In some embodiments, thedebugging chip230 can comprise a substrate232 (e.g., formed of a semiconductor, such as silicon), adebugging circuitry234 patterned in a portion of thesubstrate232, and a debugging chip bonding layer (e.g., a bonding layer236).Debugging chip230 can be configured to debug the hardware and/or software ofIC device212. In various embodiments, thedebugging chip230 can be configured to only debug the hardware and/or software of theIC device212. For example, at least 50%, at least 75%, at least 90%, at least 95%, or at least 99% of all circuitry of thedebugging chip230 can be configured for debugging theIC device212. In some embodiments, thedebugging chip230 may not include any circuitry that is not configured to assist in debugging theIC device212. In other embodiments, thedebugging chip230 may comprise mostly circuitry configured to assist in debugging theIC device212. For example, more than half of the circuitry of thedebugging chip230 may be configured to debug theIC device212, and less than half of any circuitry of thedebugging chip230 may be configured for other functions.

Thebonding layer236 can include a non-conductive (e.g., dielectric)layer237 and a plurality ofconductive contacts238. AlthoughFIG.2B schematically illustrates debuggingchip bonding layer236 as a single layer, it should be appreciated thatlayer236 can comprise multiple layer and/or sub-layers. A plurality ofconductive contacts238 may be at least partially embedded inbonding layer236. In some embodiments, theIC device212 can comprise a device portion containing anactive circuitry211 and an IC bonding surface (e.g., a bonding layer) which may comprise a non-conductive (e.g., dielectric, back-end-of-line)layer240 and a plurality of

conductive contacts

239 and241 at least partially embedded in thedielectric layer240. The plurality of conductive contacts239 (e.g., debugging pads) may be electrically connected via trace lines (e.g., routing lines, debugging trace lines, debugging routing lines, etc.)220 to theactive circuitry211. The plurality ofconductive contacts241 may comprise a power, a ground, and/or signal interconnections configured to connect to theIC device212.IC device212 may comprise a semiconductor device. The trace lines220 may be at least partially embedded within thenon-conductive layer240, they may terminate withinnon-conductive layer240, or they may extend to an upper surface ofnon-conductive layer240. AlthoughFIG.2B schematically illustratesIC bonding layer240 as a single layer, it should be appreciated thatlayer240 can comprise multiple layers and/or sub-layers. In some embodiments, thedebugging chip230 may be directly hybrid bonded to theIC device211. In some embodiments, the debuggingchip bonding layer236 is directly bonded to theIC bonding surface240. In a hybrid bonding configuration, non-conductive

dielectric layers

236 and240 are directly bonded without an adhesive and opposing

contacts

238 and239 are directly bonded without an adhesive.

In some embodiments, thedebugging chip230 can be configured to test some or all of the functionality ofactive circuitry211 of theIC device212. For example, in some operations, thedebugging circuitry234 can be configured to transmit one or more signals to the active circuitry (e.g., one or more transistors) through the directly bonded

conductive contact pads

238 and239 of thedebugging chip230 and theIC device212. The transmitted signal(s) can probe portions of the active circuitry (e.g., one or more transistors to be probed or tested, or one or more software packets to be run or tested), and the tested active circuitry can emit one or more return signals that are conveyed from theIC device212 to thedebugging circuitry234 of thedebugging chip230 by way of the

contact pads

238 and239 of the bonding layers. The one or more return signals can be processed by thedebugging circuitry234, which can be programmed to determine whether the active circuitry of theIC device212 is functional or non-functional. The one or more return signals can also be saved by an internal memory of thedebugging chip230. Thedebugging chip230 can transmit an indication signal to theIC device212 and/or to an external device (e.g., a package and/or system board) indicating the programming of the active circuitry (e.g., whether the tested circuit(s) or the tested software instructions are functional or non-functional). Thedebugging chip230 can store the one or more return signals which may be retrieved by a testing engineer or external testing system.

As compared to conventional debugging circuitries,debugging chip230 may use a high density ofconnections238 to connect from debug tap points within thedebug circuitry234 directly to thedirect bonding layer236. Beneficially, the use of direct hybrid bonding techniques can enable high-density interconnections for debugging multiple channels of theIC device212.Debugging chip230 may comprise a memory and logic configured to store, manipulate, and/or analyze signals. In some embodiments,debugging chip230 may comprise a memory for storage of signal data and logic for control an analysis of signal data. In some embodiments,debugging chip230 may comprise an FPGA logic device.

In some embodiments, thedebugging chip230 is configured to collect data from theIC device212. In some embodiments, thedebugging chip230 is configured to debugIC device212. In some embodiments, debuggingIC device212 comprises storing data collected from signals produced byIC device212. In some embodiments, debuggingIC device212 comprises analyzing and/or manipulating signals produced byIC device212 to determine whether the circuitry is programmed appropriately (e.g., to debug the circuitry211). For example, in various embodiments, thedebugging chip230 can be programmed to send signal packets to theIC device212 and to await a response from theIC device212. The packet response from theIC device212 can be compared to an expected response without a predetermined margin. Thedebugging chip230 can store the response in its memory and alert the user of any discrepancy. The discrepancies can be stored in thedebugging chip230 for review by the user, or the sequences of packets can be uploaded to another device accessible by the user. When the debugging processes are complete, the user can review the discrepancies and repair any defects in theIC device212.

In some embodiments,connections238 may comprise a power, a ground, and/or signal interconnections configured to control the debugging process on theIC device212. In some embodiments, the density ofconnections238 may be significantly high. For example, in various embodiments, theconnections238 can comprise a pitch of less than 50 microns, less than 20 microns, less than 10 microns, less than 5 microns, or less than 1 micron. The density ofconnections238 can be several hundred times denser than conventional solder ball connections.

FIG.2D illustrates a debugged chip structure, according to some embodiments. After debugging is performed inpre-market IC devices212, in production-runIC devices212,IC bonding layer240, anddebugging pads239 may be omitted from theIC device212 as well. OmittingIC bonding layer240 anddebugging pads239 may comprise not patterningIC bonding layer240 or debuggingpads238 in the production-run IC device212. Advantageously, omittingIC bonding layer240 anddebugging pads239 may not necessitate a chip redesign prior to productions. In some embodiments, during production runs ofIC device212,trace lines220 will remain connected toactive circuitry211. However, unlike inFIG.2C, inFIG.2D,trace lines220 may not be connected to a plurality ofdebugging pads239 but may instead terminate at or in one or more back-end-of-line (BEOL) layers. In some embodiments, a non-conductive layer242 (e.g., a back-end-of-line (BEOL) layer) may be deposited over the trace lines220. In some embodiments, a plurality ofcontact pads241 may be at least partially embedded intonon-conductive layer242. In some embodiments, the plurality ofcontact pads241 may comprise power, ground, and/or signal interconnections to connect functional circuitry of theIC device212 to another element to which theIC device212 is to be directly bonded. In some embodiments, the plurality ofcontact pads241 may not be connected to the trace lines220. In some embodiments tracelines220 may be patterned withinnon-conductive layer242. In some embodiments,trace lines220 may terminate below thenon-conductive layer242. In some embodiments,trace lines220 are disconnected from other circuitry (not pictured). In some embodiments,trace lines220 may be disconnected fromactive circuitry211. In some embodiments,trace lines220 may be electrically inactive (e.g., disconnected from other circuitries). In various embodiments, thetrace lines220 can terminate at or below a bonding surface of theIC device212, and thetrace lines220 may not be connected to a contact pad at the bonding surface of theIC device212.

FIG.2E illustrates, a debugged chip structure, according to some embodiments. Similarly toFIG.2D, after debugging is performed inpre-market IC devices212, in production-runIC devices212, thedebugging chip230 may not be bonded to theIC device212. Unlike inFIG.2D, in which theIC bonding layer240 was omitted from the mass-market IC device212, inFIG.2E, anon-conductive layer250 may be deposited overbonding layer240 and coveringdebugging pads239. In some embodiments, covering thedebugging pads239 may inhibit electrical access to thedebugging pads239. In some embodiments,non-conductive layer250 may be one or more dielectric layers. In some embodiments, a plurality ofconductive pads241 may be at least partially embedded innon-conductive layer250 andbonding layer240. The plurality ofconductive pads241 may comprise power, ground, and/or signal interconnections configured to connect to theIC device212. In some embodiments,conductive pads241 do not connect to the trace lines220.

FIG.3 illustrates anIC device310 configured for direct bonding to a debugging element.IC device310 has electrical contact pads (e.g., debugging pads)312 on a surface of theIC device310. Debuggingpads312 can be configured for direct bonding to a debugging chip (not shown). Thedebugging pads312 are electrically connected toconductive traces320 embedded in arouting layer324 provided overactive circuitry330. Tracinglines320 are connected to taplines322.Tap lines322 are electrical connections that connect different circuitry blocks330 of theIC device310. After debugging of theIC device310, debuggingpads312 may remain exposed. As previously described, a non-conductive layer (not pictured) may be deposited overdebugging pads312, thereby limiting access todebugging pads312 from outside of theIC device310. As previously disclosed, in the production device, debuggingpads312 may not be included, exposing the trace lines320. In some embodiments, a non-conductive layer may be deposited over the exposed trace lines320. In some embodiments, the non-conductive layer may be one or more back end of line layers. In some embodiments, thetrace lines320 may be embedded at least partially in the non-conductive (e.g., back end of line) layer and/or layers324. In some embodiments, the non-conductive layer or layers324 may be formed over the trace lines320.

Various embodiments disclosed herein relate to directly bonded structures in which two elements (e.g., an IC device, SoC device, semiconductor device, a debugging chip, etc.) can be directly bonded to one another without an intervening adhesive. A directly bonded structure comprises two elements that can be directly bonded to one another without an intervening adhesive. Two or more semiconductor elements (such as integrated device dies, wafers, IC devices and elements, debugging chips, SoCs, etc.) may be stacked on or bonded to one another to form a bonded structure. Conductive contact pads of a first element may be electrically connected to corresponding conductive contact pads of a second element. Any suitable number of elements can be stacked in the bonded structure. For example, a third element can be stacked on the second element, a fourth element can be stacked on the third element, and so forth. Additionally or alternatively, one or more additional elements can be stacked laterally adjacent one another along the first element. In some embodiments, the laterally stacked additional element may be smaller than the second element. In some embodiments, the laterally stacked additional element may be two times smaller than the second element.

FIGS.4A and4B schematically illustrate a process for forming a hybrid bonded structure without an intervening adhesive (which may sometimes be referred to as a “direct hybrid bonded structure”) according to some implementations. As used herein, the term “hybrid bonding” refers to a species of direct bonding in which there are both i) nonconductive features directly bonded to nonconductive features, and ii) conductive features directly bonded to conductive features. InFIGS.4A and4B, a bondedstructure400 comprises two

elements

402 and404 that can be directly bonded to one another at abond interface418 without an intervening adhesive. Two or moremicroelectronic elements402 and404 (such as semiconductor elements, including, for example, integrated device dies, wafers, passive devices, individual active devices such as power switches, etc.) may be stacked on or bonded to one another to form the bondedstructure400. Conductive features406a(e.g., contact pads, exposed ends of vias (e.g., TSVs), or a through substrate electrodes) of afirst element402 may be electrically connected to correspondingconductive features406bof asecond element404. Any suitable number of elements can be stacked in the bondedstructure400. For example, a third element (not shown) can be stacked on thesecond element404, a fourth element (not shown) can be stacked on the third element, and so forth. Additionally or alternatively, one or more additional elements (not shown) can be stacked laterally adjacent one another along thefirst element402. In some implementations, the laterally stacked additional element may be smaller than the second element. In some implementations, the laterally stacked additional element may be two times smaller than the second element.

In some implementations, the

elements

402 and404 are directly bonded to one another without an intervening adhesive. In various implementations, a non-conductive field region that includes a non-conductive or dielectric material can serve as afirst bonding layer408aof thefirst element402 which can be directly bonded to a corresponding non-conductive field region that includes a non-conductive or dielectric material serving as asecond bonding layer408bof thesecond element404 without an intervening adhesive. The non-conductive bonding layers408aand408bcan be disposed on respective

front sides

414aand414bof

device portions

410aand410b, such as a semiconductor (e.g., silicon) portion of the

elements

402,404. Active devices and/or circuitry can be patterned and/or otherwise disposed in or on the

device portions

410aand410b. Active devices and/or circuitry can be disposed at or near the

front sides

414aand414bof the

device portions

410aand410b, and/or at or near

opposite backsides

416aand416bof the

device portions

410aand410b. Bonding layers can be provided on front sides and/or back sides of the elements. The non-conductive material can be referred to as a non-conductive bonding region orbonding layer408aof thefirst element402. In some implementations, thenon-conductive bonding layer408aof thefirst element402 can be directly bonded to the correspondingnon-conductive bonding layer408bof thesecond element404 using dielectric-to-dielectric bonding techniques. For example, non-conductive or dielectric-to-dielectric bonds may be formed without an intervening adhesive using the direct bonding techniques disclosed at least in U.S. Pat. Nos. 9,464,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes. It should be appreciated that in various implementations, the bonding layers408aand/or408bcan comprise a non-conductive material such as a dielectric material, such as silicon oxide, or an undoped semiconductor material, such as undoped silicon. Suitable dielectric bonding surface or materials for direct bonding include but are not limited to inorganic dielectrics, such as silicon oxide, silicon nitride, or silicon oxynitride, or can include carbon, such as silicon carbide, silicon oxycarbonitride, low K dielectric materials, SiCOH dielectrics, silicon carbonitride or diamond-like carbon or a material comprising a diamond surface. Such carbon-containing ceramic materials can be considered inorganic, despite the inclusion of carbon. In some implementations, the dielectric materials do not comprise polymer materials, such as epoxy, resin or molding materials.

In some implementations, the

device portions

410aand410bcan have a significantly different coefficients of thermal expansion (CTEs) defining a heterogenous structure. The CTE difference between the

device portions

410aand410b, and particularly between bulk semiconductor, typically single crystal portions of the

device portions

410a,410b, can be greater than 5 ppm or greater than 10 ppm. For example, the CTE difference between the

device portions

410aand410bcan be in a range of 5 ppm to 100 ppm, 5 ppm to 40 ppm, 10 ppm to 100 ppm, or 10 ppm to 40 ppm. In some implementations, one of the

device portions

410aand410bcan comprise optoelectronic single crystal materials, including perovskite materials, that are useful for optical piezoelectric or pyroelectric applications, and the other of the

device portions

410a,410bcomprises a more conventional substrate material. For example, one of the

device portions

410a,410bcomprises lithium tantalate (LiTaO3) or lithium niobate (LiNbO3), and the other one of the

device portions

410a,410bcomprises silicon (Si), quartz, fused silica glass, sapphire, or a glass. In other implementations, one of the

device portions

410aand410bcomprises a III-V single semiconductor material, such as gallium arsenide (GaAs) or gallium nitride (GaN), and the other one of the

device portions

410aand410bcan comprise a non-III-V semiconductor material, such as silicon (Si), or can comprise other materials with similar CTE, such as quartz, fused silica glass, sapphire, or a glass.

In various implementations, direct hybrid bonds can be formed without an intervening adhesive. For example, nonconductive bonding surfaces412aand412bcan be polished to a high degree of smoothness. The nonconductive bonding surfaces412aand412bcan be polished using, for example, chemical mechanical polishing (CMP). The roughness of the

polished bonding surfaces

412aand412bcan be less than 30 Å rms. For example, the roughness of the bonding surfaces412aand412bcan be in a range of about 0.1 Å rms to 15 Å rms, 0.5 Å rms to 10 Å rms, or 1 Å rms to 5 Å rms. The bonding surfaces412aand412bcan be cleaned and exposed to a plasma and/or etchants to activate the

surfaces

412aand412b. In some implementations, the

surfaces

412aand412bcan be terminated with a species after activation or during activation (e.g., during the plasma and/or etch processes). Without being limited by theory, in some implementations, the activation process can be performed to break chemical bonds at the bonding surfaces412aand412b, and the termination process can provide additional chemical species at the bonding surfaces412aand412bthat improves the bonding energy during direct bonding. In some implementations, the activation and termination are provided in the same step, e.g., a plasma to activate and terminate the

surfaces

412aand412b. In other implementations, the bonding surfaces412aand412bcan be terminated in a separate treatment to provide the additional species for direct bonding. In various implementations, the terminating species can comprise nitrogen. For example, in some implementations, the bonding surface(s)412a,412bcan be exposed to a nitrogen-containing plasma. Further, in some implementations, the bonding surfaces412aand412bcan be exposed to fluorine. For example, there may be one or multiple fluorine peaks at or near abond interface418 between the first and

second elements

402,404. Thus, in the directly bondedstructure400, thebond interface418 between two non-conductive materials (e.g., the bonding layers408aand408b) can comprise a very smooth interface with higher nitrogen content and/or fluorine peaks at thebond interface418. Additional examples of activation and/or termination treatments may be found throughout U.S. Pat. Nos. 9,464,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes. The roughness of the

polished bonding surfaces

412aand412bcan be slightly rougher (e.g., about 1 Å rms to 30 Å rms, 3 Å rms to 20 Å rms, or possibly rougher) after an activation process.

In various implementations,conductive features406aof thefirst element402 can also be directly bonded to correspondingconductive features406bof thesecond element404. For example, a direct hybrid bonding technique can be used to provide conductor-to-conductor direct bonds along thebond interface418 that includes covalently direct bonded non-conductive-to-non-conductive (e.g., dielectric-to-dielectric) surfaces, prepared as described above. In various implementations, the conductor-to-conductor (e.g.,conductive feature406atoconductive feature406b) direct bonds and the dielectric-to-dielectric hybrid bonds can be formed using the direct bonding techniques disclosed at least in U.S. Pat. Nos. 9,716,033 and 9,452,988, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes. In direct hybrid bonding implementations described herein, conductive features are provided within non-conductive bonding layers, and both conductive and nonconductive features are prepared for direct bonding, such as by the planarization, activation and/or termination treatments described above. Thus, the bonding surface prepared for direct bonding includes both conductive and non-conductive features.

For example, non-conductive (e.g., dielectric) bonding surfaces412a,412b(e.g., inorganic dielectric surfaces) can be prepared and directly bonded to one another without an intervening adhesive as explained above. Conductive contact features (e.g.,

conductive features

406aand406bwhich may be at least partially surrounded by non-conductive dielectric field regions within the bonding layers408a,408b) may also directly bond to one another without an intervening adhesive. In various implementations, the

conductive features

406a,406bcan comprise discrete pads or traces at least partially embedded in the non-conductive field regions. In some implementations, the conductive contact features can comprise exposed contact surfaces of through substrate vias (e.g., through silicon vias (TSVs)). In some implementations, the respective

conductive features

406aand406bcan be recessed below exterior (e.g., upper) surfaces (non-conductive bonding surfaces412aand412b) of the dielectric field region or non-conductive bonding layers408aand408b, for example, recessed by less than 30 nm, less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm. In various implementations, prior to direct bonding, the recesses in the opposing elements can be sized such that the total gap between opposing contact pads is less than 15 nm, or less than 10 nm. The non-conductive bonding layers408aand408bcan be directly bonded to one another without an adhesive at room temperature in some implementations and, subsequently, the bondedstructure400 can be annealed. Upon annealing, the

conductive features

406aand406bcan expand and contact one another to form a metal-to-metal direct bond. Beneficially, the use of Direct Bond Interconnect, or DBI®, techniques commercially available from Adeia of San Jose, CA, can enable high density of

conductive features

406aand406bto be connected across the direct bond interface418 (e.g., small or fine pitches for regular arrays). In some implementations, the pitch of the

conductive features

406aand406b, such as conductive traces embedded in the bonding surface of one of the bonded elements, may be less than 100 microns or less than 10 microns or even less than 2 microns. For some applications, the ratio of the pitch of the

conductive features

406aand406bto one of the dimensions (e.g., a diameter) of the bonding pad is less than is less than 20, or less than 10, or less than 5, or less than 3 and sometimes desirably less than 2. In other applications, the width of the conductive traces embedded in the bonding surface of one of the bonded elements may range between 0.3 to 20 microns, e.g., in a range of 0.3 to 3 microns. In various implementations, the

conductive features

406aand406band/or traces can comprise copper or copper alloys, although other metals may be suitable. For example, the conductive features disclosed herein, such as the

conductive features

406aand406b, can comprise fine-grain metal (e.g., a fine-grain copper).

Thus, in direct bonding processes, afirst element402 can be directly bonded to asecond element404 without an intervening adhesive. In some arrangements, thefirst element402 can comprise a singulated element, such as a singulated integrated device die. In other arrangements, thefirst element402 can comprise a carrier or substrate (e.g., a wafer) that includes a plurality (e.g., tens, hundreds, or more) of device regions that, when singulated, form a plurality of integrated device dies. Similarly, thesecond element404 can comprise a singulated element, such as a singulated integrated device die. In other arrangements, thesecond element404 can comprise a carrier or substrate (e.g., a wafer). The implementations disclosed herein can accordingly apply to wafer-to-wafer (W2 W), die-to-die (D2D), or die-to-wafer (D2 W) bonding processes. In wafer-to-wafer (W2 W) processes, two or more wafers can be directly bonded to one another (e.g., direct hybrid bonded) and singulated using a suitable singulation process. After singulation, side edges of the singulated structure (e.g., the side edges of the two bonded elements) may be substantially flush and may include markings indicative of the common singulation process for the bonded structure (e.g., saw markings if a saw singulation process is used).

As explained herein, the first and

second elements

402 and404 can be directly bonded to one another without an adhesive, which is different from a deposition process and results in a structurally different interface compared to a deposition. In one application, a width of thefirst element402 in the bonded structure is similar to a width of thesecond element404. In some other implementations, a width of thefirst element402 in the bondedstructure400 is different from a width of thesecond element404. Similarly, the width or area of the larger element in the bonded structure may be at least 10% larger than the width or area of the smaller element. The first and

second elements

402 and404 can accordingly comprise non-deposited elements. Further, directly bondedstructures400, unlike deposited layers, can include a defect region along thebond interface418 in which nanometer-scale voids (nanovoids) are present. The nanovoids may be formed due to activation of the bonding surfaces412aand412b(e.g., exposure to a plasma). As explained above, thebond interface418 can include concentration of materials from the activation and/or last chemical treatment processes. For example, in implementations that utilize a nitrogen plasma for activation, a nitrogen peak can be formed at thebond interface418. The nitrogen peak can be detectable using secondary ion mass spectroscopy (SIMS) techniques. In various implementations, for example, a nitrogen termination treatment (e.g., exposing the bonding surface to a nitrogen-containing plasma) can replace OH groups of a hydrolyzed (OH-terminated) surface with NH2 molecules, yielding a nitrogen-terminated surface. In implementations that utilize an oxygen plasma for activation, an oxygen peak can be formed at thebond interface418. In some implementations, thebond interface418 can comprise silicon oxynitride, silicon oxycarbonitride, or silicon carbonitride. As explained herein, the direct bond can comprise a covalent bond, which is stronger than van Der Waals bonds. The bonding layers408aand408bcan also comprise polished surfaces that are planarized to a high degree of smoothness.

In various implementations, the metal-to-metal bonds between the

conductive features

406aand406bcan be joined such that metal grains grow into each other across thebond interface418. In some implementations, the metal is or includes copper, which can have grains oriented along the411 crystal plane for improved copper diffusion across thebond interface418. In some implementations, the

conductive features

406aand406bmay include nanotwinned copper grain structure, which can aid in merging the conductive features during anneal. Thebond interface418 can extend substantially entirely to at least a portion of the bonded

conductive features

406aand406b, such that there is substantially no gap between the non-conductive bonding layers408aand408bat or near the bonded

conductive features

406aand406b. In some implementations, a barrier layer may be provided under and/or laterally surrounding the

conductive features

406aand406b(e.g., which may include copper). In other implementations, however, there may be no barrier layer under the

conductive features

406aand406b, for example, as described in U.S. Pat. No. 11,195,748, which is incorporated by reference herein in its entirety and for all purposes.

Beneficially, the use of the hybrid bonding techniques described herein can enable extremely fine pitch between adjacent

conductive features

406aand406b, and/or small pad sizes. For example, in various implementations, the pitch p (e.g., the distance from edge-to-edge or center-to-center, as shown inFIG.4A) between adjacentconductive features406a(or406b) can be in a range of 0.5 microns to 50 microns, in a range of 0.75 microns to 25 microns, in a range of 1 micron to 25 microns, in a range of 1 micron to 10 microns, or in a range of 1 micron to 5 microns. Further, a major lateral dimension (e.g., a pad diameter) can be small as well, e.g., in a range of 0.25 microns to 30 microns, in a range of 0.25 microns to 5 microns, or in a range of 0.5 microns to 5 microns.

As described above, the non-conductive bonding layers408a,408bcan be directly bonded to one another without an adhesive and, subsequently, the bondedstructure400 can be annealed. Upon annealing, the

conductive features

406a,406bcan expand and contact one another to form a metal-to-metal direct bond. In some implementations, the materials of the

conductive features

406a,406bcan interdiffuse during the annealing process.

Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Likewise, the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Moreover, as used herein, when a first element is described as being “on” or “over” a second element, the first element may be directly on or over the second element, such that the first and second elements directly contact, or the first element may be indirectly on or over the second element such that one or more elements intervene between the first and second elements. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items, that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

Moreover, conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel apparatus, methods, and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. For example, while blocks are presented in a given arrangement, alternative embodiments may perform similar functionalities with different components and/or circuit topologies, and some blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these blocks may be implemented in a variety of different ways. Any suitable combination of the elements and acts of the various embodiments described above can be combined to provide further embodiments. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.

Several illustrative examples of testing elements for bonded structures and related systems and methods have been disclosed. Although this disclosure has been described in terms of certain illustrative examples and uses, other examples and other uses, including examples and uses which do not provide all of the features and advantages set forth herein, are also within the scope of this disclosure. Components, elements, features, acts, or steps may be arranged or performed differently than described and components, elements, features, acts, or steps may be combined, merged, added, or left out in various examples. All possible combinations and subcombinations of elements and components described herein are intended to be included in this disclosure. No single feature or group of features is necessary or indispensable.

Certain features that are described in this disclosure in the context of separate implementations may also be implemented in combination in a single implementation. Conversely, various features that are described in the context of a single implementation also may be implemented in multiple implementations separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations, one or more features from a claimed combination may in some cases be excised from the combination, and the combination may be claimed as a subcombination or variation of a subcombination.

Further, while illustrative examples have been described, any examples having equivalent elements, modifications, omissions, and/or combinations are also within the scope of this disclosure. Moreover, although certain aspects, advantages, and novel features are described herein, not necessarily all such advantages may be achieved in accordance with any particular example. For example, some examples within the scope of this disclosure achieve one advantage, or a group of advantages, as taught herein without necessarily achieving other advantages taught or suggested herein. Further, some examples may achieve different advantages than those taught or suggested herein.

Some examples have been described in connection with the accompanying drawings. The figures may or may not be drawn and/or shown to scale, but such scale should not be limiting, since dimensions and proportions other than what are shown are contemplated and are within the scope of the disclosed invention. Distances, angles, etc. are merely illustrative and do not necessarily bear an exact relationship to actual dimensions and layout of the devices illustrated. Components may be added, removed, and/or rearranged. Further, the disclosure herein of any particular feature, aspect, method, property, characteristic, quality, attribute, element, or the like in connection with various examples may be used in all other examples set forth herein. Additionally, any methods described herein may be practiced using any device suitable for performing the recited steps.

For purposes of summarizing the disclosure, certain aspects, advantages, and features of the inventions have been described herein. Not all, or any such advantages are necessarily achieved in accordance with any particular example of the inventions disclosed herein. No aspects of this disclosure are essential or indispensable. In many examples, the devices, systems, and methods may be configured differently than illustrated in the figures. or description herein. For example, various functionalities provided by the illustrated modules may be combined, rearranged, added, or deleted. In some implementations, additional or different processors or modules may perform some or all of the functionalities described with reference to the examples described and illustrated in the figures. Many implementation variations are possible. Any of the features, structures, steps, or processes disclosed in this specification may be included in any example.

Claims

1.-38. (canceled)

39. An integrated circuit device comprising:

a first active circuitry in a device portion of the integrated circuit device;

a first non-conductive layer over the device portion, the first non-conductive layer at least partially defining a direct bonding surface of the integrated circuit device; and

a trace line connected to the first active circuitry and extending at least partially into the first non-conductive layer, wherein the trace line is configured to provide electrical communication between the first active circuitry and a debugging chip, the trace line terminating at or below the direct bonding surface.

40. The integrated circuit device ofclaim 39, further comprising a plurality of contact features at least partially embedded within the first non-conductive layer, the plurality of contact features configured to connect only to corresponding contact features of the debugging chip.

41. The integrated circuit device ofclaim 40, wherein the first non-conductive layer comprises a bonding surface prepared for direct hybrid bonding.

42. The integrated circuit device ofclaim 40, wherein the plurality of contact features is connected to the trace line.

43. The integrated circuit device ofclaim 40, further comprising a second non-conductive layer over the first non-conductive layer.

44. The integrated circuit device ofclaim 39, wherein the trace line terminates at or below a bonding surface of the integrated circuit device, the trace line not connected to a contact pad at the bonding surface of the integrated circuit device.

45. An integrated circuit comprising the integrated circuit device ofclaim 39, the bonded structure further comprising a debugging element directly bonded to the integrated circuit device,

wherein a first non-conductive layer of the integrated circuit device is directly bonded to a second non-conductive layer of the debugging element without an intervening adhesive; and

wherein a first contact feature of the integrated circuit device is directly bonded to a second contact feature of the debugging element without an intervening adhesive.

46. The integrated circuit ofclaim 45, wherein the debugging chip is configured to debug the first active circuitry.

47. A bonded structure comprising:

an integrated circuit device comprising first active circuitry; and

a debugging element comprising debugging circuitry, the debugging element directly bonded to the integrated circuit device without an adhesive along a bonding interface;

wherein the debugging circuitry is configured to debug logic of first active circuitry of the integrated circuit device.

48. The bonded structure ofclaim 47, wherein the debugging element comprises a chip.

49. The bonded structure ofclaim 47, wherein a first non-conductive bonding layer of the integrated circuit device is directly bonded to a second non-conductive bonding layer of the debugging element without an intervening adhesive; and

wherein a first contact feature of the integrated circuit device is directly bonded to a second contact feature of the debugging element without the intervening adhesive.

50. The bonded structure ofclaim 49, wherein a majority of the first and second contact features are configured to debug at least a portion of the first active circuitry of the integrated circuit device.

51. The bonded structure ofclaim 50, wherein debugging at least a portion of the first active circuitry comprises probing the first active circuitry so as to produce a one or more signals from the first active circuitry;

collecting the one or more signals;

storing the one or more signals; and

analyzing the one or more signals.

52. The bonded structure ofclaim 51, wherein the debugging circuitry is configured to transmit one or more signals to the first active circuitry.

53. The bonded structure ofclaim 52, wherein the one or more signals probe one or more portions of the first active circuitry.

54. A debugging chip comprising:

a debugging circuitry;

wherein the debugging circuitry is configured to debug a circuitry of an element directly bonded to the debugging chip, wherein debugging the circuitry of the element comprises analyzing signals emitted from the element; and

a bonding layer configured for direct hybrid bonding without an adhesive, the bonding layer comprising a non-conductive bonding layer and a plurality of contact features at least partially embedded within the non-conductive bonding layer.

55. The debugging chip ofclaim 54, wherein the debugging chip is directly bonded to an integrated circuit device, without an adhesive,

wherein the integrated circuit device comprises an active circuitry.

56. The debugging chip ofclaim 55, wherein the debugging circuitry is configured to probe the active circuitry of the integrated circuit device.

57. The debugging chip ofclaim 56, wherein the debugging circuitry is configured to store signals produced from the active circuitry of the integrated circuit device.

58. The debugging chip ofclaim 57, wherein the debugging circuitry is configured to manipulate signals produced from the active circuitry of the integrated circuit device.