US20210202296A1 - Method for lifting substrate and apparatus for treating substrate - Google Patents
Method for lifting substrate and apparatus for treating substrateDownload PDFInfo
- Publication number
- US20210202296A1 US20210202296A1US17/138,427US202017138427AUS2021202296A1US 20210202296 A1US20210202296 A1US 20210202296A1US 202017138427 AUS202017138427 AUS 202017138427AUS 2021202296 A1US2021202296 A1US 2021202296A1
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- velocity
- substrate
- lift pin
- support plate
- acceleration
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Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Definitions
- Embodiments of the inventive concept described hereinrelate to a substrate lifting method for raising a substrate off a support plate, and a substrate treating apparatus.
- unit processessuch as deposition, coating, developing, etching, cleaning, and the like, are sequentially or repeatedly performed on a substrate.
- the processesare performed in different apparatuses, and a robot provided in a substrate treating apparatus transfers the substrate between the apparatuses.
- each of the apparatusesis equipped with a pin assembly for receiving the substrate from the robot or transferring the substrate to the robot.
- the pin assemblyincludes lift pins for receiving the substrate from the robot or transferring the substrate to the robot.
- a support plate for supporting the substrategenerally has pin holes vertically formed through the support plate.
- the lift pinsare provided in the pin holes, respectively, and move upward and downward to seat the substrate on the support plate.
- Embodiments of the inventive conceptprovide a substrate lifting method and a substrate treating apparatus for minimizing occurrence of a squeeze effect during operation of lift pins.
- a method for lifting a substrateincludes raising the substrate off a support plate having the substrate placed thereon, by using a lift pin, in which the lift pin raises the substrate off the support plate while vertically moving between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart upward from the support plate by a second distance, and the lift pin is brought into contact with the substrate in an interval in which the lift pin is decelerated or moved at a constant velocity.
- the raising of the substratemay include a first acceleration step of accelerating the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity and a first deceleration step of decelerating the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity, and the lift pin may be brought into contact with the substrate in the first deceleration step.
- the raising of the substratemay include a first acceleration step of accelerating the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity and a first constant velocity step of uniformly moving the lift pin at the second velocity, and the lift pin may be brought into contact with the substrate in the first constant velocity step.
- the raising of the substratemay further include a first constant velocity step of uniformly moving the lift pin at the second velocity after the first acceleration step.
- the raising of the substratemay further include a second acceleration step of accelerating the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after the first deceleration step and a second deceleration step of decelerating the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
- the raising of the substratemay further include a second constant velocity step of uniformly moving the lift pin at the fourth velocity.
- the second accelerationmay be greater than the first acceleration.
- the first velocitymay be 0.
- the third velocitymay be 0.
- the fifth velocitymay be 0.
- an apparatus for treating a substrateincludes a support plate on which the substrate is placed, a lift pin that loads the substrate onto the support plate or unloads the substrate from the support plate, a drive member that raises or lowers the lift pin, and a controller that controls operation of the drive member.
- the controllercontrols the drive member to raise the substrate off the support plate while vertically moving the lift pin between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart from upward from the support plate by a second distance and to bring the lift pin into contact with the substrate in an interval in which the lift pin is decelerated or moved at a constant velocity.
- the controllermay control the drive member to accelerate the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity, uniformly move the lift pin at the second velocity, decelerate the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity, and bring the lift pin into contact with the substrate when the lift pin is decelerated.
- the controllermay control the drive member to accelerate the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after decelerating the lift pin at the first deceleration, uniformly move the lift pin at the fourth velocity, and decelerate the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
- the second accelerationmay be greater than the first acceleration.
- the first velocitymay be 0.
- the third velocitymay be 0.
- the fifth velocitymay be 0.
- the drive membermay be a motor.
- FIG. 1is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept
- FIG. 2is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus of FIG. 1 ;
- FIG. 3is a plan view of the substrate treating apparatus of FIG. 1 ;
- FIG. 4is a view illustrating one example of a hand of a transfer robot of FIG. 3 ;
- FIG. 5is a plan view of a heat treatment chamber of FIG. 2 ;
- FIG. 6is a front view of the heat treatment chamber of FIG. 3 ;
- FIG. 7is a sectional view of a heating unit according to an embodiment of the inventive concept.
- FIG. 8is a flowchart illustrating a substrate lifting method according to an embodiment of the inventive concept
- FIG. 9is a graph depicting a moving velocity of lift pins according to an embodiment of the inventive concept.
- FIGS. 10 to 13are views illustrating the substrate lifting method in sequence according to an embodiment of the inventive concept.
- FIGS. 14 to 18are views illustrating a substrate lifting method in sequence according to another embodiment of the inventive concept.
- FIG. 1is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.
- FIG. 2is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus of FIG. 1 .
- FIG. 3is a plan view of the substrate treating apparatus of FIG. 1 .
- the substrate treating apparatus 1includes an index module 20 , a treating module 30 , and an interface module 40 .
- the index module 20 , the treating module 30 , and the interface module 40are sequentially disposed in a row.
- a direction in which the index module 20 , the treating module 30 , and the interface module 40 are arrangedis referred to as a first direction 12
- a direction perpendicular to the first direction 12 when viewed from aboveis referred to as a second direction 14
- a direction perpendicular to both the first direction 12 and the second direction 14is referred to as a third direction 16 .
- the index module 20transfers substrates W from carriers 10 having the substrates W received therein to the treating module 30 and places the completely treated substrates W in the carriers 10 .
- the lengthwise direction of the index module 20is parallel to the second direction 14 .
- the index module 20has load ports 22 and an index frame 24 .
- the load ports 22are located on the opposite side to the treating module 30 with respect to the index frame 24 .
- the carriers 10each of which has the substrates W received therein, are placed on the load ports 22 .
- the load ports 22may be disposed along the second direction 14 .
- Airtight carriers 10such as front open unified pods (FOUPs) may be used as the carriers 10 .
- the carriers 10may be placed on the load ports 22 by a transfer unit (not illustrated), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.
- a transfer unitnot illustrated
- an overhead transfersuch as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.
- An index robot 2200is provided in the index frame 24 .
- a guide rail 2300the lengthwise direction of which is parallel to the second direction 14 , is provided in the index frame 24 , and the index robot 2200 is movable on the guide rail 2300 .
- the index robot 2200includes hands 2220 on which the substrates W are placed.
- the hands 2220are movable forward and backward, rotatable about an axis facing the third direction 16 , and movable along the third direction 16 .
- the treating module 30performs a coating process and a developing process on the substrates W.
- the treating module 30has the coating blocks 30 a and the developing blocks 30 b .
- the coating blocks 30 aperform the coating process on the substrates W
- the developing blocks 30 bperform the developing process on the substrates W.
- the coating blocks 30 aare stacked on each other.
- the developing blocks 30 bare stacked on each other.
- two coating blocks 30 a and two developing block 30 bare provided.
- the coating blocks 30 amay be disposed under the developing blocks 30 b .
- the two coating blocks 30 amay perform the same process and may have the same structure.
- the two developing blocks 30 bmay perform the same process and may have the same structure.
- each of the coating blocks 30 ahas heat treatment chambers 3200 , a transfer chamber 3400 , liquid treatment chambers 3600 , and buffer chambers 3800 .
- Each of the heat treatment chambers 3200performs a heat treatment process on the substrate W.
- the heat treatment processmay include a cooling process and a heating process.
- Each of the liquid treatment chambers 3600forms a liquid film on the substrate W by dispensing a liquid onto the substrate W.
- the liquid filmmay be a photoresist film or an antireflection film.
- the transfer chamber 3400transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the coating block 30 a.
- the transfer chamber 3400is disposed such that the lengthwise direction thereof is parallel to the first direction 12 .
- a transfer robot 3422is provided in the transfer chamber 3400 .
- the transfer robot 3422transfers the substrate W between the heat treatment chamber 3200 , the liquid treatment chamber 3600 , and the buffer chambers 3800 .
- the transfer robot 3422has a hand 3420 on which the substrate W is placed, and the hand 3420 is movable forward and backward, rotatable about an axis facing the third direction 16 , and movable along the third direction 16 .
- a guide rail 3300the lengthwise direction of which is parallel to the first direction 12 , is provided in the transfer chamber 3400 , and the transfer robot 3422 is movable on the guide rail 3300 .
- liquid treatment chambers 3600may be stacked on each other.
- the liquid treatment chambers 3600are disposed on one side of the transfer chamber 3400 .
- the liquid treatment chambers 3600are arranged side by side along the first direction 12 .
- Some of the liquid treatment chambers 3600are located adjacent to the index module 20 .
- these liquid treatment chambersare referred to as the front liquid treatment chambers 3602 .
- Other liquid treatment chambers 3600are located adjacent to the interface module 40 .
- these liquid treatment chambersare referred to as the rear liquid treatment chambers 3604 .
- Each of the front liquid treatment chambers 3602applies a first liquid to the substrate W
- each of the rear liquid treatment chambers 3604applies a second liquid to the substrate W.
- the first liquid and the second liquidmay be different types of liquids.
- the first liquidis an antireflection film
- the second liquidis photoresist.
- the photoresistmay be applied to the substrate W coated with the antireflection film.
- the first liquidmay be photoresist
- the second liquidmay be an antireflection film.
- the antireflection filmmay be applied to the substrate W coated with the photoresist.
- the first liquid and the second liquidmay be of the same type. Both the first liquid and the second liquid may be photoresist.
- Some of the buffer chambers 3800are disposed between the index module 20 and the transfer chamber 3400 .
- these buffer chambersare referred to as the front buffers 3802 .
- the front buffers 3802are stacked on each other along an up/down direction.
- the other buffer chambers 3800are disposed between the transfer chamber 3400 and the interface module 40 .
- These buffer chambersare referred to as the rear buffers 3804 .
- the rear buffers 3804are stacked on each other along the up/down direction.
- Each of the front buffers 3802 and the rear buffers 3804temporarily stores a plurality of substrates W.
- the substrates W stored in the front buffers 3802are loaded or unloaded by the index robot 2200 and the transfer robot 3422 .
- the substrates W stored in the rear buffers 3804are loaded or unloaded by the transfer robot 3422 and a first robot 4602 .
- Each of the developing blocks 30 bhas heat treatment chambers 3200 , a transfer chamber 3400 , and liquid treatment chambers 3600 .
- the heat treatment chambers 3200 , the transfer chamber 3400 , and the liquid treatment chambers 3600 of the developing block 30 bare provided in a structure and an arrangement substantially similar to the structure and the arrangement in which the heat treatment chambers 3200 , the transfer chamber 3400 , and the liquid treatment chambers 3600 of the coating block 30 a are provided.
- the liquid treatment chambers 3600 in the developing block 30 bare provided as developing chambers 3600 , all of which identically perform a developing process on the substrate W by dispensing a developing solution onto the substrate W.
- the interface module 40connects the treating module 30 with an external exposing apparatus 50 .
- the interface module 40has an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .
- the interface frame 4100may have, at the top thereof, a fan filter unit that forms a downward air flow in the interface frame 4100 .
- the additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600are disposed in the interface frame 4100 .
- the additional process chamber 4200may perform a predetermined additional process on the substrate W.
- the additional process chamber 4200may perform a predetermined additional process on the substrate W.
- the additional processmay be an edge exposing process of exposing an edge region of the substrate W to light, a top-side cleaning process of cleaning the top side of the substrate W, or a backside cleaning process of cleaning the backside of the substrate W.
- a plurality of additional process chambers 4200may be provided.
- the additional process chambers 4200may be stacked one above another.
- the additional process chambers 4200may all perform the same process. Selectively, some of the additional process chambers 4200 may perform different processes.
- the interface buffer 4400provides a space in which the substrate W transferred between the coating block 30 a , the additional process chambers 4200 , the exposing apparatus 50 , and the developing block 30 b temporarily stays.
- a plurality of interface buffers 4400may be provided.
- the interface buffers 4400may be stacked one above another.
- the additional process chambers 4200may be disposed on one side of an extension line facing the lengthwise direction of the transfer chamber 3400 , and the interface buffers 4400 may be disposed on an opposite side of the extension line.
- the transfer member 4600transfers the substrate W between the coating block 30 a , the additional process chambers 4200 , the exposing apparatus 50 , and the developing block 30 b .
- the transfer member 4600may be implemented with one or more robots.
- the transfer member 4600has the first robot 4602 and a second robot 4606 .
- the first robot 4602may transfer the substrate W between the coating block 30 a , the additional process chambers 4200 , and the interface buffers 4400 .
- An interface robot 4604may transfer the substrate W between the interface buffers 4400 and the exposing apparatus 50 .
- the second robot 4606may transfer the substrate W between the interface buffers 4400 and the developing block 30 b.
- the first robot 4602 and the second robot 4606each include a hand on which the substrate W is placed, and the hand is movable forward and backward, rotatable about an axis parallel to the third direction 16 , and movable along the third direction 16 .
- the hands of the index robot 2200 , the first robot 4602 , and the second robot 4606may all have the same shape as the hand 3420 of the transfer robot 3422 .
- a hand of a robot that directly exchanges the substrate W with a transfer plate 3240 of each heat treatment chamber 3200may have the same shape as the hand 3420 of the transfer robot 3422 , and hands of the remaining robots may have a different shape from the hand 3420 of the transfer robot 3422 .
- the index robot 2200may directly exchange the substrate W with a heating unit 3230 of the front heat treatment chamber 3200 provided in the coating block 30 a.
- the transfer robots 3422 provided in the coating block 30 a and the developing block 30 bmay directly exchange the substrate W with the transfer plate 3240 located in the heat treatment chamber 3200 .
- FIG. 4is a view illustrating one example of the hand of the transfer robot of FIG. 3 .
- the hand 3420has a base 3428 and support protrusions 3429 .
- the base 3428may have an annular ring shape, the circumference of which is partly curved.
- the base 3428has an inner diameter larger than the diameter of the substrate W.
- the support protrusions 3429extend inward from the base 3428 .
- the support protrusions 3429support the edge region of the substrate W. According to an embodiment, four support protrusions 3429 may be provided at equal intervals.
- the heat treatment chambers 3200are arranged along the first direction 12 .
- the heat treatment chambers 3200are located on one side of the transfer chamber 3400 .
- FIG. 5is a schematic plan view illustrating one example of the heat treatment chamber of FIG. 3
- FIG. 6is a front view of the heat treatment chamber of FIG. 3
- the heat treatment chamber 3200has a housing 3210 , a cooling unit 3220 , the heating unit 3230 , and the transfer plate 3240 .
- the housing 3210has a substantially rectangular parallelepiped shape.
- the housing 3210has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits the housing 3210 .
- the entrance/exit openingmay remain open.
- a door(not illustrated) may be provided to open and close the entrance/exit opening.
- the cooling unit 3220 , the heating unit 3230 , and the transfer plate 3240are provided in the housing 3210 .
- the cooling unit 3220 and the heating unit 3230are provided side by side along the second direction 14 . According to an embodiment, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 3230 .
- the cooling unit 3220has a cooling plate 3222 .
- the cooling plate 3222may have a substantially circular shape when viewed from above.
- a cooling member 3224is provided inside the cooling plate 3222 .
- the cooling member 3224may be formed inside the cooling plate 3222 and may serve as a fluid channel through which a cooling fluid flows.
- the heating unit 3230is provided as an apparatus 1000 that heats the substrate W above room temperature.
- the heating unit 3230heats the substrate W in an atmospheric atmosphere or in an atmosphere of reduced pressure lower than the atmospheric pressure.
- the transfer plate 3240has a substantially circular plate shape and has a diameter corresponding to that of the substrate W.
- the transfer plate 3240has notches 3244 formed at the edge thereof.
- the notches 3244may have a shape corresponding to the protrusions 3429 formed on the hand 3420 of the transfer robot 3422 described above. Furthermore, as many notches 3244 as the protrusions 3429 formed on the hand 3420 are formed in positions corresponding to the protrusions 3429 .
- the substrate Wis transferred between the hand 3420 and the transfer plate 3240 when the vertical positions of the hand 3420 and the transfer plate 3240 aligned with each other in the up/down direction are changed.
- the transfer plate 3240may be mounted on a guide rail 3249 and may be moved between a first region 3212 and a second region 3214 along the guide rail 3249 by an actuator 3246 .
- a plurality of guide grooves 3242 in a slit shapeare formed in the transfer plate 3240 .
- the guide grooves 3242extend inward from the edge of the transfer plate 3240 .
- the lengthwise direction of the guide grooves 3242is parallel to the second direction 14 , and the guide grooves 3242 are located to be spaced apart from each other along the first direction 12 .
- the guide grooves 3242prevent the transfer plate 3240 and lift pins 1340 from interfering with each other when the substrate W is transferred between the transfer plate 3240 and the heating unit 3230 .
- the substrate Wis heated in a state of being directly placed on the transfer plate 3240 .
- the substrate Wis cooled in a state in which the transfer plate 3240 on which the substrate W is placed is brought into contact with the cooling plate 3222 .
- the transfer plate 3240is formed of a material having a high heat transfer rate for efficient heat transfer between the cooling plate 3222 and the substrate W.
- the transfer plate 3240may be formed of a metallic material.
- the heating units 3230 provided in some of the heat treatment chambers 3200may improve adhesion of photoresist to the substrate W by supplying a gas while heating the substrate W.
- the gasmay be a hexamethyldisilane gas.
- FIG. 7is a sectional view illustrating the heating unit of FIG. 6 .
- the heating unit 3230includes a chamber 1120 , a support unit 1300 , the lift pins 1340 , a drive member 1346 , a heater unit 1420 , and a controller 1500 .
- the chamber 1120has a treatment space 1110 in which heat treatment is performed on the substrate W.
- the treatment space 1110is hermetically sealed from the outside.
- the support unit 1300supports the substrate W in the treatment space 1110 .
- the support unit 1300includes a support plate 1320 , the lift pins 1340 , and proximity pins 1600 .
- the support plate 1320transfers, to the substrate W, heat generated from the heater unit 1420 .
- the support plate 1320has a circular plate shape.
- An upper surface of the support plate 1320has a larger diameter than the substrate W.
- the upper surface of the support plate 1320functions as a seating surface on which the substrate W is placed. A plurality of lift holes are formed in the seating surface.
- the lift pins 1340raise or lower the substrate W over the support plate 1320 .
- the lift pins 1340have a pin shape facing the vertical direction.
- the lift pins 1340may be mounted on a single plate 1342 .
- the lift pins 1340are located in the lift holes, respectively.
- the drive member 1346moves the lift pins 1340 between a raised position and a lowered position.
- the raised positionis defined as a position in which upper ends of the lift pins 1340 are in a higher position than the seating surface
- the lowered positionis defined as a position in which the upper ends of the lift pins 1340 are at the same height as, or in a lower position than, the seating surface.
- the drive member 1346may be located outside the chamber 1120 . In an embodiment, the drive member 1346 may be a motor.
- the proximity pins 1600prevent the substrate W from making direct contact with the support plate 1320 .
- the proximity pins 1600have a pin shape having a lengthwise direction parallel to the lift pins 1340 .
- the proximity pins 1600are fixedly installed on the seating surface of the support plate 1320 .
- the proximity pins 1600are located to protrude upward from the seating surface.
- Upper ends of the proximity pins 1600are provided as contact surfaces making direct contact with the bottom of the substrate W, and the contact surfaces have a shape that is convex upward. Accordingly, contact areas between the proximity pins 1600 and the substrate W may be minimized.
- the heater unit 1420heats the substrate W placed on the support plate 1320 .
- the heater unit 1420is located under the substrate W placed on the support plate 1320 .
- the heater unit 1420includes a plurality of heaters.
- the heatersare located inside the support plate 1320 .
- the heatersmay be located on the bottom of the support plate 1320 .
- the heatersare located on the same plane.
- FIG. 8is a flowchart illustrating the substrate lifting method of the inventive concept.
- FIG. 9is a graph depicting a moving velocity of the lift pins 1340 according to the substrate lifting method of the inventive concept.
- FIGS. 10 to 13are views illustrating the substrate lifting method of the inventive concept in sequence.
- the moving velocity of the lift pins 1340 illustrated in FIG. 9refers to a velocity that the controller 1500 inputs to cause the drive member 1346 to move the lift pins 1340 .
- the substrate lifting method of the inventive conceptincludes first acceleration step S 10 , first constant velocity step S 20 , first deceleration step S 30 , second acceleration step S 40 , second constant velocity step S 50 , and second deceleration step S 60 .
- first acceleration step S 10 to second deceleration step S 60the lift pins 1340 raise the substrate W off the support plate 1320 while vertically moving from the lowered position to the raised position.
- the lift pins 1340are located in the lift holes.
- first acceleration step S 10the lift pins 1340 are vertically moved toward the substrate W supported on the proximity pins 1600 .
- first acceleration step S 10the lift pins 1340 are accelerated at a first acceleration from a first velocity V 1 to a second velocity V 2 higher than the first velocity V 1 .
- the first velocity V 1is 0. That is, the lift pins 1340 are at rest when first acceleration step S 10 starts. Referring to FIG. 10 , in first acceleration step S 10 , the lift pins 1340 at rest in the lift holes are accelerated to a position where the lift pins 1340 are not brought into contact with the substrate W.
- first deceleration step S 30after the lift pins 1340 are uniformly moved at the second velocity V 2 .
- first deceleration step S 30after the lift pins 1340 are uniformly moved at the second velocity V 2 , the lift pins 1340 are decelerated at a first deceleration from the second velocity V 2 to a third velocity V 3 lower than the second velocity V 2 .
- first deceleration step S 30may be performed without first constant velocity step S 20 .
- the lift pins 1340are brought into contact with the substrate W. As the lift pins 1340 are decelerated when the lift pins 1340 are brought into contact with the substrate W, there is an advantage of reducing a squeeze effect.
- the lift pins 1340 and the substrate Ware brought into contact with each other in the position where the proximity pins 1600 support the substrate W.
- the lift pins 1340 and the substrate Ware brought into contact with each other at a distance of ht from the support plate 1320 .
- the third velocity V 3which is the velocity of the lift pins 1340 , is 0.
- second acceleration step S 40the lift pins 1340 vertically raise the substrate W in the state of being brought into contact with the bottom of the substrate W.
- the lift pins 1340are accelerated at a second acceleration from the third velocity V 3 to a fourth velocity V 4 higher than the third velocity V 3 .
- the second accelerationmay be greater than the first acceleration.
- second constant velocity step S 50the lift pins 1340 are uniformly moved at the fourth velocity V 4 .
- second deceleration step S 60after the lift pins 1340 are uniformly moved at the fourth velocity V 4 , the lift pins 1340 are decelerated at a second deceleration from the fourth velocity V 4 to a fifth velocity V 5 lower than the fourth velocity V 4 .
- second deceleration step S 60may be performed without second constant velocity step S 50 .
- the fifth velocity V 5is 0, and when second deceleration step S 60 is completed, the lift pins 1340 stop.
- the lift pins 1340raise the substrate W to a distance of h2 from the support plate 1320 .
- the lift pins 1340make contact with the substrate W in first deceleration step S 30 .
- the lift pins 1340may make contact with the substrate W in first constant velocity step S 20 .
- the support unit 1300includes the proximity pins 1600 and the proximity pins 1600 support the substrate W at the distance of h1 from the support plate 1320 .
- the support unit 1300may not include the proximity pins 1600 .
- the lift pins 1340may support the substrate W at a distance of d1 from the support plate 1320 .
- d1may be equal to h1 of FIG. 11 .
- first acceleration step S 10first constant velocity step S 20 , first deceleration step S 30 , second acceleration step S 40 , second constant velocity step S 50 , and second deceleration step S 60 , which have been described above, may be performed.
- first acceleration step S 10may be performed while the substrate W is moved from the position spaced apart from the support plate 1320 by d1 to the position spaced apart from the support plate 1320 by d2.
- the difference between d1 and d2may be a distance corresponding to the area “A” illustrated in FIG. 9 .
- d2may be set to a distance by which a squeeze effect does not occur when the substrate W is spaced apart from the support plate 1320 .
- second acceleration step S 40may be performed while the substrate W is moved from the position spaced apart from the support plate 1320 by d2 to the position spaced apart from the support plate 1320 by d3.
- the difference between d2 and d3may be a distance corresponding to the area “B” illustrated in FIG. 9 .
- the drive member 1346 that drives the lift pins 1340is implemented with a motor. Accordingly, the stroke of the lift pins 1340 may be provided as various distances. Furthermore, the driving velocity of the lift pins 1340 may be easily adjusted, and accuracy in driving the lift pins 1340 may be improved. In addition, there is an advantage of reducing costs by removing the proximity pins 1600 as illustrated in FIG. 14 .
- the second accelerationis greater than the first acceleration, and therefore time spent moving the lift pins 1340 from the lowered position to the raised position may be reduced.
- the lift pins 1340are accelerated in first acceleration step S 10 , and therefore time spent moving the lift pins 1340 from the lowered position to the raised position may be reduced.
- the third velocity V 3is 0 in first deceleration step S 30 , and therefore a deceleration interval may be ensured in an actual movement of the lift pins 1340 .
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Abstract
Description
- A claim for priority under 35 U.S.C. § 119 is made to Korean Patent Application No. 10-2019-0177478 filed on Dec. 30, 2019, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.
- Embodiments of the inventive concept described herein relate to a substrate lifting method for raising a substrate off a support plate, and a substrate treating apparatus.
- In general, to manufacture semiconductor elements, unit processes, such as deposition, coating, developing, etching, cleaning, and the like, are sequentially or repeatedly performed on a substrate. The processes are performed in different apparatuses, and a robot provided in a substrate treating apparatus transfers the substrate between the apparatuses. Furthermore, each of the apparatuses is equipped with a pin assembly for receiving the substrate from the robot or transferring the substrate to the robot. The pin assembly includes lift pins for receiving the substrate from the robot or transferring the substrate to the robot.
- A support plate for supporting the substrate generally has pin holes vertically formed through the support plate. The lift pins are provided in the pin holes, respectively, and move upward and downward to seat the substrate on the support plate.
- However, when the lift pins raise the substrate off the support plate, a squeeze effect phenomenon may arise in which the substrate is bounced or broken due to negative pressure instantaneously formed between the substrate and the support plate.
- Embodiments of the inventive concept provide a substrate lifting method and a substrate treating apparatus for minimizing occurrence of a squeeze effect during operation of lift pins.
- The technical problems to be solved by the inventive concept are not limited to the aforementioned problems, and any other technical problems not mentioned herein will be clearly understood from the following description by those skilled in the art to which the inventive concept pertains.
- According to an exemplary embodiment, a method for lifting a substrate includes raising the substrate off a support plate having the substrate placed thereon, by using a lift pin, in which the lift pin raises the substrate off the support plate while vertically moving between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart upward from the support plate by a second distance, and the lift pin is brought into contact with the substrate in an interval in which the lift pin is decelerated or moved at a constant velocity.
- According to an embodiment, the raising of the substrate may include a first acceleration step of accelerating the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity and a first deceleration step of decelerating the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity, and the lift pin may be brought into contact with the substrate in the first deceleration step.
- According to an embodiment, the raising of the substrate may include a first acceleration step of accelerating the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity and a first constant velocity step of uniformly moving the lift pin at the second velocity, and the lift pin may be brought into contact with the substrate in the first constant velocity step.
- According to an embodiment, the raising of the substrate may further include a first constant velocity step of uniformly moving the lift pin at the second velocity after the first acceleration step.
- According to an embodiment, the raising of the substrate may further include a second acceleration step of accelerating the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after the first deceleration step and a second deceleration step of decelerating the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
- According to an embodiment, the raising of the substrate may further include a second constant velocity step of uniformly moving the lift pin at the fourth velocity.
- According to an embodiment, the second acceleration may be greater than the first acceleration.
- According to an embodiment, the first velocity may be 0.
- According to an embodiment, the third velocity may be 0.
- According to an embodiment, the fifth velocity may be 0.
- According to an exemplary embodiment, an apparatus for treating a substrate includes a support plate on which the substrate is placed, a lift pin that loads the substrate onto the support plate or unloads the substrate from the support plate, a drive member that raises or lowers the lift pin, and a controller that controls operation of the drive member. The controller controls the drive member to raise the substrate off the support plate while vertically moving the lift pin between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart from upward from the support plate by a second distance and to bring the lift pin into contact with the substrate in an interval in which the lift pin is decelerated or moved at a constant velocity.
- According to an embodiment, the controller may control the drive member to accelerate the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity, uniformly move the lift pin at the second velocity, decelerate the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity, and bring the lift pin into contact with the substrate when the lift pin is decelerated.
- According to an embodiment, the controller may control the drive member to accelerate the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after decelerating the lift pin at the first deceleration, uniformly move the lift pin at the fourth velocity, and decelerate the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
- According to an embodiment, the second acceleration may be greater than the first acceleration.
- According to an embodiment, the first velocity may be 0.
- According to an embodiment, the third velocity may be 0.
- According to an embodiment, the fifth velocity may be 0.
- According to an embodiment, the drive member may be a motor.
- The above and other objects and features will become apparent from the following description with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified, and wherein:
FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept;FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus ofFIG. 1 ;FIG. 3 is a plan view of the substrate treating apparatus ofFIG. 1 ;FIG. 4 is a view illustrating one example of a hand of a transfer robot ofFIG. 3 ;FIG. 5 is a plan view of a heat treatment chamber ofFIG. 2 ;FIG. 6 is a front view of the heat treatment chamber ofFIG. 3 ;FIG. 7 is a sectional view of a heating unit according to an embodiment of the inventive concept;FIG. 8 is a flowchart illustrating a substrate lifting method according to an embodiment of the inventive concept;FIG. 9 is a graph depicting a moving velocity of lift pins according to an embodiment of the inventive concept;FIGS. 10 to 13 are views illustrating the substrate lifting method in sequence according to an embodiment of the inventive concept; andFIGS. 14 to 18 are views illustrating a substrate lifting method in sequence according to another embodiment of the inventive concept.- Hereinafter, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the dimensions of components are exaggerated for clarity of illustration.
FIG. 1 is a schematic perspective view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.FIG. 2 is a sectional view illustrating coating blocks and developing blocks of the substrate treating apparatus ofFIG. 1 .FIG. 3 is a plan view of the substrate treating apparatus ofFIG. 1 .- Referring to
FIGS. 1 to 3 , thesubstrate treating apparatus 1 includes anindex module 20, a treatingmodule 30, and aninterface module 40. According to an embodiment, theindex module 20, the treatingmodule 30, and theinterface module 40 are sequentially disposed in a row. Hereinafter, a direction in which theindex module 20, the treatingmodule 30, and theinterface module 40 are arranged is referred to as afirst direction 12, a direction perpendicular to thefirst direction 12 when viewed from above is referred to as asecond direction 14, and a direction perpendicular to both thefirst direction 12 and thesecond direction 14 is referred to as athird direction 16. - The
index module 20 transfers substrates W fromcarriers 10 having the substrates W received therein to the treatingmodule 30 and places the completely treated substrates W in thecarriers 10. The lengthwise direction of theindex module 20 is parallel to thesecond direction 14. Theindex module 20 hasload ports 22 and anindex frame 24. Theload ports 22 are located on the opposite side to the treatingmodule 30 with respect to theindex frame 24. Thecarriers 10, each of which has the substrates W received therein, are placed on theload ports 22. Theload ports 22 may be disposed along thesecond direction 14. - Airtight
carriers 10 such as front open unified pods (FOUPs) may be used as thecarriers 10. Thecarriers 10 may be placed on theload ports 22 by a transfer unit (not illustrated), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator. - An
index robot 2200 is provided in theindex frame 24. Aguide rail 2300, the lengthwise direction of which is parallel to thesecond direction 14, is provided in theindex frame 24, and theindex robot 2200 is movable on theguide rail 2300. Theindex robot 2200 includeshands 2220 on which the substrates W are placed. Thehands 2220 are movable forward and backward, rotatable about an axis facing thethird direction 16, and movable along thethird direction 16. - The treating
module 30 performs a coating process and a developing process on the substrates W. The treatingmodule 30 has the coating blocks30aand the developingblocks 30b. The coating blocks30aperform the coating process on the substrates W, and the developingblocks 30bperform the developing process on the substrates W. The coating blocks30aare stacked on each other. The developing blocks30bare stacked on each other. - According to the embodiment of
FIG. 1 , twocoating blocks 30aand two developingblock 30bare provided. The coating blocks30amay be disposed under the developingblocks 30b. According to an embodiment, the twocoating blocks 30amay perform the same process and may have the same structure. Furthermore, the two developingblocks 30bmay perform the same process and may have the same structure. - Referring to
FIG. 3 , each of the coating blocks30ahasheat treatment chambers 3200, atransfer chamber 3400,liquid treatment chambers 3600, and buffer chambers3800. Each of theheat treatment chambers 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. Each of theliquid treatment chambers 3600 forms a liquid film on the substrate W by dispensing a liquid onto the substrate W. The liquid film may be a photoresist film or an antireflection film. Thetransfer chamber 3400 transfers the substrate W between theheat treatment chamber 3200 and theliquid treatment chamber 3600 in thecoating block 30a. - The
transfer chamber 3400 is disposed such that the lengthwise direction thereof is parallel to thefirst direction 12. Atransfer robot 3422 is provided in thetransfer chamber 3400. Thetransfer robot 3422 transfers the substrate W between theheat treatment chamber 3200, theliquid treatment chamber 3600, and the buffer chambers3800. According to an embodiment, thetransfer robot 3422 has ahand 3420 on which the substrate W is placed, and thehand 3420 is movable forward and backward, rotatable about an axis facing thethird direction 16, and movable along thethird direction 16. Aguide rail 3300, the lengthwise direction of which is parallel to thefirst direction 12, is provided in thetransfer chamber 3400, and thetransfer robot 3422 is movable on theguide rail 3300. - Some of the
liquid treatment chambers 3600 may be stacked on each other. Theliquid treatment chambers 3600 are disposed on one side of thetransfer chamber 3400. Theliquid treatment chambers 3600 are arranged side by side along thefirst direction 12. Some of theliquid treatment chambers 3600 are located adjacent to theindex module 20. Hereinafter, these liquid treatment chambers are referred to as the frontliquid treatment chambers 3602. Otherliquid treatment chambers 3600 are located adjacent to theinterface module 40. Hereinafter, these liquid treatment chambers are referred to as the rearliquid treatment chambers 3604. - Each of the front
liquid treatment chambers 3602 applies a first liquid to the substrate W, and each of the rearliquid treatment chambers 3604 applies a second liquid to the substrate W. The first liquid and the second liquid may be different types of liquids. According to an embodiment, the first liquid is an antireflection film, and the second liquid is photoresist. The photoresist may be applied to the substrate W coated with the antireflection film. Selectively, the first liquid may be photoresist, and the second liquid may be an antireflection film. In this case, the antireflection film may be applied to the substrate W coated with the photoresist. Selectively, the first liquid and the second liquid may be of the same type. Both the first liquid and the second liquid may be photoresist. - Some of the buffer chambers3800 are disposed between the
index module 20 and thetransfer chamber 3400. Hereinafter, these buffer chambers are referred to as thefront buffers 3802. Thefront buffers 3802 are stacked on each other along an up/down direction. The other buffer chambers3800 are disposed between thetransfer chamber 3400 and theinterface module 40. These buffer chambers are referred to as therear buffers 3804. Therear buffers 3804 are stacked on each other along the up/down direction. Each of thefront buffers 3802 and therear buffers 3804 temporarily stores a plurality of substrates W. The substrates W stored in thefront buffers 3802 are loaded or unloaded by theindex robot 2200 and thetransfer robot 3422. The substrates W stored in therear buffers 3804 are loaded or unloaded by thetransfer robot 3422 and afirst robot 4602. - Each of the developing
blocks 30bhasheat treatment chambers 3200, atransfer chamber 3400, andliquid treatment chambers 3600. Theheat treatment chambers 3200, thetransfer chamber 3400, and theliquid treatment chambers 3600 of the developingblock 30bare provided in a structure and an arrangement substantially similar to the structure and the arrangement in which theheat treatment chambers 3200, thetransfer chamber 3400, and theliquid treatment chambers 3600 of thecoating block 30aare provided. However, theliquid treatment chambers 3600 in the developingblock 30bare provided as developingchambers 3600, all of which identically perform a developing process on the substrate W by dispensing a developing solution onto the substrate W. - The
interface module 40 connects the treatingmodule 30 with an external exposingapparatus 50. Theinterface module 40 has aninterface frame 4100, anadditional process chamber 4200, aninterface buffer 4400, and atransfer member 4600. - The
interface frame 4100 may have, at the top thereof, a fan filter unit that forms a downward air flow in theinterface frame 4100. Theadditional process chamber 4200, theinterface buffer 4400, and thetransfer member 4600 are disposed in theinterface frame 4100. Before the substrate W completely treated in thecoating block 30ais transferred to the exposingapparatus 50, theadditional process chamber 4200 may perform a predetermined additional process on the substrate W. Selectively, before the substrate W completely treated in the exposingapparatus 50 is transferred to the developingblock 30b, theadditional process chamber 4200 may perform a predetermined additional process on the substrate W. According to an embodiment, the additional process may be an edge exposing process of exposing an edge region of the substrate W to light, a top-side cleaning process of cleaning the top side of the substrate W, or a backside cleaning process of cleaning the backside of the substrate W. A plurality ofadditional process chambers 4200 may be provided. Theadditional process chambers 4200 may be stacked one above another. Theadditional process chambers 4200 may all perform the same process. Selectively, some of theadditional process chambers 4200 may perform different processes. - The
interface buffer 4400 provides a space in which the substrate W transferred between thecoating block 30a, theadditional process chambers 4200, the exposingapparatus 50, and the developingblock 30btemporarily stays. A plurality ofinterface buffers 4400 may be provided. The interface buffers4400 may be stacked one above another. - According to an embodiment, the
additional process chambers 4200 may be disposed on one side of an extension line facing the lengthwise direction of thetransfer chamber 3400, and theinterface buffers 4400 may be disposed on an opposite side of the extension line. - The
transfer member 4600 transfers the substrate W between thecoating block 30a, theadditional process chambers 4200, the exposingapparatus 50, and the developingblock 30b. Thetransfer member 4600 may be implemented with one or more robots. According to an embodiment, thetransfer member 4600 has thefirst robot 4602 and asecond robot 4606. Thefirst robot 4602 may transfer the substrate W between thecoating block 30a, theadditional process chambers 4200, and the interface buffers4400. An interface robot4604 may transfer the substrate W between theinterface buffers 4400 and the exposingapparatus 50. Thesecond robot 4606 may transfer the substrate W between theinterface buffers 4400 and the developingblock 30b. - The
first robot 4602 and thesecond robot 4606 each include a hand on which the substrate W is placed, and the hand is movable forward and backward, rotatable about an axis parallel to thethird direction 16, and movable along thethird direction 16. - The hands of the
index robot 2200, thefirst robot 4602, and thesecond robot 4606 may all have the same shape as thehand 3420 of thetransfer robot 3422. Selectively, a hand of a robot that directly exchanges the substrate W with atransfer plate 3240 of eachheat treatment chamber 3200 may have the same shape as thehand 3420 of thetransfer robot 3422, and hands of the remaining robots may have a different shape from thehand 3420 of thetransfer robot 3422. - According to an embodiment, the
index robot 2200 may directly exchange the substrate W with aheating unit 3230 of the frontheat treatment chamber 3200 provided in thecoating block 30a. - Furthermore, the
transfer robots 3422 provided in thecoating block 30aand the developingblock 30bmay directly exchange the substrate W with thetransfer plate 3240 located in theheat treatment chamber 3200. FIG. 4 is a view illustrating one example of the hand of the transfer robot ofFIG. 3 . Referring toFIG. 4 , thehand 3420 has abase 3428 andsupport protrusions 3429. Thebase 3428 may have an annular ring shape, the circumference of which is partly curved. Thebase 3428 has an inner diameter larger than the diameter of the substrate W. Thesupport protrusions 3429 extend inward from thebase 3428. Thesupport protrusions 3429 support the edge region of the substrate W. According to an embodiment, foursupport protrusions 3429 may be provided at equal intervals.- The
heat treatment chambers 3200 are arranged along thefirst direction 12. Theheat treatment chambers 3200 are located on one side of thetransfer chamber 3400. FIG. 5 is a schematic plan view illustrating one example of the heat treatment chamber ofFIG. 3 , andFIG. 6 is a front view of the heat treatment chamber ofFIG. 3 . Referring toFIGS. 5 and 6 , theheat treatment chamber 3200 has ahousing 3210, acooling unit 3220, theheating unit 3230, and thetransfer plate 3240.- The
housing 3210 has a substantially rectangular parallelepiped shape. Thehousing 3210 has, in a sidewall thereof, an entrance/exit opening (not illustrated) through which the substrate W enters and exits thehousing 3210. The entrance/exit opening may remain open. Selectively, a door (not illustrated) may be provided to open and close the entrance/exit opening. Thecooling unit 3220, theheating unit 3230, and thetransfer plate 3240 are provided in thehousing 3210. Thecooling unit 3220 and theheating unit 3230 are provided side by side along thesecond direction 14. According to an embodiment, thecooling unit 3220 may be located closer to thetransfer chamber 3400 than theheating unit 3230. - The
cooling unit 3220 has acooling plate 3222. Thecooling plate 3222 may have a substantially circular shape when viewed from above. A coolingmember 3224 is provided inside thecooling plate 3222. According to an embodiment, the coolingmember 3224 may be formed inside thecooling plate 3222 and may serve as a fluid channel through which a cooling fluid flows. - The
heating unit 3230 is provided as anapparatus 1000 that heats the substrate W above room temperature. Theheating unit 3230 heats the substrate W in an atmospheric atmosphere or in an atmosphere of reduced pressure lower than the atmospheric pressure. - The
transfer plate 3240 has a substantially circular plate shape and has a diameter corresponding to that of the substrate W. Thetransfer plate 3240 hasnotches 3244 formed at the edge thereof. Thenotches 3244 may have a shape corresponding to theprotrusions 3429 formed on thehand 3420 of thetransfer robot 3422 described above. Furthermore, asmany notches 3244 as theprotrusions 3429 formed on thehand 3420 are formed in positions corresponding to theprotrusions 3429. The substrate W is transferred between thehand 3420 and thetransfer plate 3240 when the vertical positions of thehand 3420 and thetransfer plate 3240 aligned with each other in the up/down direction are changed. Thetransfer plate 3240 may be mounted on aguide rail 3249 and may be moved between a first region3212 and a second region3214 along theguide rail 3249 by anactuator 3246. A plurality ofguide grooves 3242 in a slit shape are formed in thetransfer plate 3240. Theguide grooves 3242 extend inward from the edge of thetransfer plate 3240. The lengthwise direction of theguide grooves 3242 is parallel to thesecond direction 14, and theguide grooves 3242 are located to be spaced apart from each other along thefirst direction 12. Theguide grooves 3242 prevent thetransfer plate 3240 andlift pins 1340 from interfering with each other when the substrate W is transferred between thetransfer plate 3240 and theheating unit 3230. - The substrate W is heated in a state of being directly placed on the
transfer plate 3240. The substrate W is cooled in a state in which thetransfer plate 3240 on which the substrate W is placed is brought into contact with thecooling plate 3222. Thetransfer plate 3240 is formed of a material having a high heat transfer rate for efficient heat transfer between thecooling plate 3222 and the substrate W. According to an embodiment, thetransfer plate 3240 may be formed of a metallic material. - The
heating units 3230 provided in some of theheat treatment chambers 3200 may improve adhesion of photoresist to the substrate W by supplying a gas while heating the substrate W. According to an embodiment, the gas may be a hexamethyldisilane gas. FIG. 7 is a sectional view illustrating the heating unit ofFIG. 6 . Referring toFIG. 7 , theheating unit 3230 includes achamber 1120, asupport unit 1300, the lift pins1340, adrive member 1346, aheater unit 1420, and acontroller 1500.- The
chamber 1120 has atreatment space 1110 in which heat treatment is performed on the substrate W. Thetreatment space 1110 is hermetically sealed from the outside. - The
support unit 1300 supports the substrate W in thetreatment space 1110. Thesupport unit 1300 includes asupport plate 1320, the lift pins1340, and proximity pins1600. Thesupport plate 1320 transfers, to the substrate W, heat generated from theheater unit 1420. In an embodiment, thesupport plate 1320 has a circular plate shape. An upper surface of thesupport plate 1320 has a larger diameter than the substrate W. The upper surface of thesupport plate 1320 functions as a seating surface on which the substrate W is placed. A plurality of lift holes are formed in the seating surface. - The lift pins1340 raise or lower the substrate W over the
support plate 1320. The lift pins1340 have a pin shape facing the vertical direction. The lift pins1340 may be mounted on asingle plate 1342. The lift pins1340 are located in the lift holes, respectively. - The
drive member 1346 moves the lift pins1340 between a raised position and a lowered position. Here, the raised position is defined as a position in which upper ends of the lift pins1340 are in a higher position than the seating surface, and the lowered position is defined as a position in which the upper ends of the lift pins1340 are at the same height as, or in a lower position than, the seating surface. Thedrive member 1346 may be located outside thechamber 1120. In an embodiment, thedrive member 1346 may be a motor. - The proximity pins1600 prevent the substrate W from making direct contact with the
support plate 1320. The proximity pins1600 have a pin shape having a lengthwise direction parallel to the lift pins1340. The proximity pins1600 are fixedly installed on the seating surface of thesupport plate 1320. The proximity pins1600 are located to protrude upward from the seating surface. Upper ends of the proximity pins1600 are provided as contact surfaces making direct contact with the bottom of the substrate W, and the contact surfaces have a shape that is convex upward. Accordingly, contact areas between the proximity pins1600 and the substrate W may be minimized. - The
heater unit 1420 heats the substrate W placed on thesupport plate 1320. Theheater unit 1420 is located under the substrate W placed on thesupport plate 1320. In an embodiment, theheater unit 1420 includes a plurality of heaters. The heaters are located inside thesupport plate 1320. Selectively, the heaters may be located on the bottom of thesupport plate 1320. The heaters are located on the same plane. - Hereinafter, a substrate lifting method of the inventive concept will be described in detail with reference to
FIGS. 8 to 13 . Thecontroller 1500 controls thedrive member 1346 to perform the substrate lifting method of the inventive concept.FIG. 8 is a flowchart illustrating the substrate lifting method of the inventive concept.FIG. 9 is a graph depicting a moving velocity of the lift pins1340 according to the substrate lifting method of the inventive concept.FIGS. 10 to 13 are views illustrating the substrate lifting method of the inventive concept in sequence. The moving velocity of the lift pins1340 illustrated inFIG. 9 refers to a velocity that thecontroller 1500 inputs to cause thedrive member 1346 to move the lift pins1340. - Referring to
FIGS. 8 and 9 , the substrate lifting method of the inventive concept includes first acceleration step S10, first constant velocity step S20, first deceleration step S30, second acceleration step S40, second constant velocity step S50, and second deceleration step S60. Through first acceleration step S10 to second deceleration step S60, the lift pins1340 raise the substrate W off thesupport plate 1320 while vertically moving from the lowered position to the raised position. - First, the lift pins1340 are located in the lift holes. In first acceleration step S10, the lift pins1340 are vertically moved toward the substrate W supported on the proximity pins1600. In first acceleration step S10, the lift pins1340 are accelerated at a first acceleration from a first velocity V1 to a second velocity V2 higher than the first velocity V1.
- In an embodiment, the first velocity V1 is 0. That is, the lift pins1340 are at rest when first acceleration step S10 starts. Referring to
FIG. 10 , in first acceleration step S10, the lift pins1340 at rest in the lift holes are accelerated to a position where the lift pins1340 are not brought into contact with the substrate W. - After first acceleration step S10, in first constant velocity step S20, the lift pins1340 are uniformly moved at the second velocity V2. In first deceleration step S30 after the lift pins1340 are uniformly moved at the second velocity V2, the lift pins1340 are decelerated at a first deceleration from the second velocity V2 to a third velocity V3 lower than the second velocity V2. Selectively, after first acceleration step S10, first deceleration step S30 may be performed without first constant velocity step S20. In an embodiment, as illustrated in
FIG. 11 , in first deceleration step S30, the lift pins1340 are brought into contact with the substrate W. As the lift pins1340 are decelerated when the lift pins1340 are brought into contact with the substrate W, there is an advantage of reducing a squeeze effect. - The lift pins1340 and the substrate W are brought into contact with each other in the position where the proximity pins1600 support the substrate W. In an embodiment, the lift pins1340 and the substrate W are brought into contact with each other at a distance of ht from the
support plate 1320. At this time, the third velocity V3, which is the velocity of the lift pins1340, is 0. After the contact of the lift pins1340 with the substrate W, second acceleration step S40, second constant velocity step S50, and second deceleration step S60 are performed in sequence. - As illustrated in
FIG. 12 , in second acceleration step S40, the lift pins1340 vertically raise the substrate W in the state of being brought into contact with the bottom of the substrate W. In second acceleration step S40, the lift pins1340 are accelerated at a second acceleration from the third velocity V3 to a fourth velocity V4 higher than the third velocity V3. In an embodiment, the second acceleration may be greater than the first acceleration. Thereafter, in second constant velocity step S50, the lift pins1340 are uniformly moved at the fourth velocity V4. In second deceleration step S60 after the lift pins1340 are uniformly moved at the fourth velocity V4, the lift pins1340 are decelerated at a second deceleration from the fourth velocity V4 to a fifth velocity V5 lower than the fourth velocity V4. Selectively, after second acceleration step S40, second deceleration step S60 may be performed without second constant velocity step S50. The fifth velocity V5 is 0, and when second deceleration step S60 is completed, the lift pins1340 stop. - As illustrated in
FIG. 13 , through second acceleration step S40 to second deceleration step S60, the lift pins1340 raise the substrate W to a distance of h2 from thesupport plate 1320. - In the above-described embodiment, it has been described that the lift pins1340 make contact with the substrate W in first deceleration step S30. However, in another embodiment, the lift pins1340 may make contact with the substrate W in first constant velocity step S20.
- In the above-described embodiment, it has been described that the
support unit 1300 includes the proximity pins1600 and the proximity pins1600 support the substrate W at the distance of h1 from thesupport plate 1320. However, in another embodiment, thesupport unit 1300 may not include the proximity pins1600. As illustrated inFIG. 14 , the lift pins1340 may support the substrate W at a distance of d1 from thesupport plate 1320. For example, d1 may be equal to h1 ofFIG. 11 . - Thereafter, first acceleration step S10, first constant velocity step S20, first deceleration step S30, second acceleration step S40, second constant velocity step S50, and second deceleration step S60, which have been described above, may be performed.
- As illustrated in
FIGS. 15 and 16 , the lift pins1340 are moved upward to a distance of d2 from thesupport plate 1320. In an embodiment, first acceleration step S10, first constant velocity step S20, and first deceleration step S30 may be performed while the substrate W is moved from the position spaced apart from thesupport plate 1320 by d1 to the position spaced apart from thesupport plate 1320 by d2. For example, the difference between d1 and d2 may be a distance corresponding to the area “A” illustrated inFIG. 9 . In an embodiment, d2 may be set to a distance by which a squeeze effect does not occur when the substrate W is spaced apart from thesupport plate 1320. - Thereafter, as illustrated in
FIGS. 17 and 18 , the lift pins1340 are moved upward to a distance of d3 from thesupport plate 1320. In an embodiment, second acceleration step S40, second constant velocity step S50, and second deceleration step S60 may be performed while the substrate W is moved from the position spaced apart from thesupport plate 1320 by d2 to the position spaced apart from thesupport plate 1320 by d3. For example, the difference between d2 and d3 may be a distance corresponding to the area “B” illustrated inFIG. 9 . - According to the inventive concept, the
drive member 1346 that drives the lift pins1340 is implemented with a motor. Accordingly, the stroke of the lift pins1340 may be provided as various distances. Furthermore, the driving velocity of the lift pins1340 may be easily adjusted, and accuracy in driving the lift pins1340 may be improved. In addition, there is an advantage of reducing costs by removing the proximity pins1600 as illustrated inFIG. 14 . - According to the inventive concept, the second acceleration is greater than the first acceleration, and therefore time spent moving the lift pins1340 from the lowered position to the raised position may be reduced.
- According to the inventive concept, the lift pins1340 are accelerated in first acceleration step S10, and therefore time spent moving the lift pins1340 from the lowered position to the raised position may be reduced.
- According to the inventive concept, the third velocity V3 is 0 in first deceleration step S30, and therefore a deceleration interval may be ensured in an actual movement of the lift pins1340.
- According to the embodiments of the inventive concept, there is an advantage of minimizing occurrence of a squeeze effect during operation of lift pins.
- Effects of the inventive concept are not limited to the aforementioned effects, and any other effects not mentioned herein may be clearly understood from this specification and the accompanying drawings by those skilled in the art to which the inventive concept pertains.
- The above description exemplifies the inventive concept. Furthermore, the above-mentioned contents describe exemplary embodiments of the inventive concept, and the inventive concept may be used in various other combinations, changes, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept that is disclosed in the specification, the equivalent scope to the written disclosures, and/or the technical or knowledge range of those skilled in the art. The written embodiments describe the best state for implementing the technical spirit of the inventive concept, and various changes required in specific applications and purposes of the inventive concept can be made. Accordingly, the detailed description of the inventive concept is not intended to restrict the inventive concept in the disclosed embodiment state. In addition, it should be construed that the attached claims include other embodiments.
- While the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not limiting, but illustrative.
Claims (10)
1. An apparatus for treating a substrate, the apparatus comprising:
a support plate on which the substrate is placed;
a lift pin configured to load the substrate onto the support plate or unload the substrate from the support plate;
a drive member configured to raise or lower the lift pin; and
a controller configured to control operation of the drive member,
wherein the controller controls the drive member to:
raise the substrate off the support plate while vertically moving the lift pin between a lowered position spaced apart downward from the support plate by a first distance and a raised position spaced apart from upward from the support plate by a second distance; and
bring the lift pin into contact with the substrate while the lift pin is decelerated or moved at a constant velocity.
2. The apparatus ofclaim 1 , wherein the controller controls the drive member to:
accelerate the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity;
decelerate the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity; and
bring the lift pin into contact with the substrate when the lift pin is decelerated.
3. The apparatus ofclaim 1 , wherein the controller controls the drive member to:
accelerate the lift pin at a first acceleration from a first velocity to a second velocity higher than the first velocity;
uniformly move the lift pin at the second velocity;
decelerate the lift pin at a first deceleration from the second velocity to a third velocity lower than the second velocity; and
bring the lift pin into contact with the substrate when the lift pin is decelerated.
4. The apparatus ofclaim 3 , wherein the controller controls the drive member to:
accelerate the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after decelerating the lift pin at the first deceleration; and
decelerate the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
5. The apparatus ofclaim 3 , wherein the controller controls the drive member to:
accelerate the lift pin at a second acceleration from the third velocity to a fourth velocity higher than the third velocity after decelerating the lift pin at the first deceleration;
uniformly move the lift pin at the fourth velocity; and
decelerate the lift pin at a second deceleration from the fourth velocity to a fifth velocity lower than the fourth velocity.
6. The apparatus ofclaim 4 , wherein the second acceleration is greater than the first acceleration.
7. The apparatus ofclaim 2 , wherein the first velocity is 0.
8. The apparatus ofclaim 2 , wherein the third velocity is 0.
9. The apparatus ofclaim 4 , wherein the fifth velocity is 0.
10. The apparatus ofclaim 1 , wherein the drive member is a motor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190177478AKR20210086748A (en) | 2019-12-30 | 2019-12-30 | Method for lifting substrate and apparatus for treating substrate |
| KR10-2019-0177478 | 2019-12-30 |
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| Publication Number | Publication Date |
|---|---|
| US20210202296A1true US20210202296A1 (en) | 2021-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US17/138,427AbandonedUS20210202296A1 (en) | 2019-12-30 | 2020-12-30 | Method for lifting substrate and apparatus for treating substrate |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20210202296A1 (en) |
| KR (2) | KR20210086748A (en) |
| CN (1) | CN113130374A (en) |
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| CN118073241A (en)* | 2024-02-29 | 2024-05-24 | 哈尔滨工业大学 | Multilayer flip chip high-flexibility stacking and integrated bonding device and method |
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| KR102715846B1 (en)* | 2022-05-11 | 2024-10-11 | 피에스케이홀딩스 (주) | Apparatus for treating substrate and method of treating substrate for remedy of substrate sticky phenomenon |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20220133843A (en) | 2022-10-05 |
| CN113130374A (en) | 2021-07-16 |
| KR20210086748A (en) | 2021-07-09 |
| KR102607731B1 (en) | 2023-11-29 |
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