Movatterモバイル変換


[0]ホーム

URL:


US20170110292A1 - Tunable gas delivery assembly with internal diffuser and angular injection - Google Patents

Tunable gas delivery assembly with internal diffuser and angular injection
Download PDF

Info

Publication number
US20170110292A1
US20170110292A1US15/393,828US201615393828AUS2017110292A1US 20170110292 A1US20170110292 A1US 20170110292A1US 201615393828 AUS201615393828 AUS 201615393828AUS 2017110292 A1US2017110292 A1US 2017110292A1
Authority
US
United States
Prior art keywords
nozzle
trench
gas delivery
delivery assembly
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/393,828
Inventor
Vladimir Knyazik
Kyle TANTIWONG
Samer Banna
Waheb Bishara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/790,735external-prioritypatent/US9162236B2/en
Application filed by Applied Materials IncfiledCriticalApplied Materials Inc
Priority to US15/393,828priorityCriticalpatent/US20170110292A1/en
Assigned to APPLIED MATERIALS, INC.reassignmentAPPLIED MATERIALS, INC.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: BANNA, SAMER, BISHARA, WAHEB, KNYAZIK, Vladimir, TANTIWONG, Kyle
Publication of US20170110292A1publicationCriticalpatent/US20170110292A1/en
Abandonedlegal-statusCriticalCurrent

Links

Images

Classifications

Definitions

Landscapes

Abstract

An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Description

Claims (20)

What is claimed is:
1. A gas delivery assembly, comprising:
a cylindrical body having a side wall and a top surface;
a first trench disposed in the top surface, wherein the first trench includes a bottom; and
a first diffuser disposed in the first trench, wherein a first plenum is formed between the first diffuser and the bottom of the first trench.
2. The gas delivery assembly ofclaim 1, further comprising a second trench disposed in the top surface of the nozzle, wherein the second trench includes a second bottom.
3. The gas delivery assembly ofclaim 2, further comprising a second diffuser disposed in the second trench, wherein a second plenum is formed between the second diffuser and the bottom of the second trench.
4. The gas delivery assembly ofclaim 3, further comprising a plurality of outer injection passages formed within the cylindrical body, wherein each of the outer injection passages extends from the bottom of the first trench to a first location inside the cylindrical body that is a first distance away from the top surface.
5. The gas delivery assembly ofclaim 4, further comprising a plurality of inner injection passages formed within the cylindrical body, wherein each of the inner injection passages extend from the bottom of the second trench to a second location inside the cylindrical body that is a second distance away from the top surface.
6. The gas delivery assembly ofclaim 5, wherein the second distance is greater than the first distance.
7. The gas delivery assembly ofclaim 5, further comprising a connecting passage connecting each of the outer injection passages to an outlet disposed in the side wall of the cylindrical body, wherein the connecting passage is substantially parallel to a bottom of the cylindrical body.
8. The gas delivery assembly ofclaim 7, wherein an angle between the connecting passage and a tangent of the side wall at a corresponding outlet ranges from about 15 degrees to about 60 degrees.
9. A gas delivery assembly, comprising:
a hub, comprising:
an inner channel; and
an outer channel; and
a nozzle coupled to the hub, wherein the nozzle comprises:
a cylindrical body having a side wall and a top surface;
a first trench disposed in the top surface, wherein the first trench includes a bottom;
a second trench disposed in the top surface, wherein the second trench includes a bottom, wherein the inner channel of the hub is aligned with the second trench of the nozzle and the outer channel of the hub is aligned with the first trench of the nozzle; and
a first diffuser disposed in the first trench, wherein a first plenum is formed between the first diffuser and the bottom of the first trench.
10. The gas delivery assembly ofclaim 9, further comprising a second diffuser disposed in the second trench, wherein a second plenum is formed between the second diffuser and the bottom of the second trench.
11. The gas delivery assembly ofclaim 10, further comprising a plurality of outer injection passages formed within the nozzle, wherein each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface.
12. The gas delivery assembly ofclaim 11, further comprising a plurality of inner injection passages formed within the nozzle, wherein each of the inner injection passages extend from the bottom of the second trench to a second location inside the nozzle that is a second distance away from the top surface.
13. The gas delivery assembly ofclaim 12, wherein the second distance is greater than the first distance.
14. The gas delivery assembly ofclaim 13, further comprising a connecting passage connecting each of the outer injection passages to an outlet disposed in the side wall of the nozzle, wherein the connecting passage is substantially parallel to a bottom of the nozzle.
15. The gas delivery assembly ofclaim 14, wherein an angle between the connecting passage and a tangent of the side wall at a corresponding outlet ranges from about 15 degrees to about 60 degrees.
16. A gas delivery assembly, comprising:
a nozzle comprising a cylindrical body having a side wall and a top surface;
a first trench disposed in the top surface;
a first diffuser disposed in the first trench, wherein a first plenum is formed between the first diffuser and a bottom of the first trench;
a plurality of outer injection passages formed within the nozzle, wherein each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface; and
a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle, wherein the connecting passage is substantially parallel to a bottom of the nozzle.
17. The gas delivery assembly ofclaim 16, further comprising a second trench disposed in the top surface of the nozzle.
18. The gas delivery assembly ofclaim 17, further comprising a second diffuser disposed in the second trench, wherein a second plenum is formed between the second diffuser and a bottom of the second trench.
19. The gas delivery assembly ofclaim 18, wherein the first and second diffusers are fabricated from alumina.
20. The gas delivery assembly ofclaim 18, wherein the first and second diffusers are fabricated from a same material as the nozzle.
US15/393,8282013-02-252016-12-29Tunable gas delivery assembly with internal diffuser and angular injectionAbandonedUS20170110292A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US15/393,828US20170110292A1 (en)2013-02-252016-12-29Tunable gas delivery assembly with internal diffuser and angular injection

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
US201361768901P2013-02-252013-02-25
US13/790,735US9162236B2 (en)2012-04-262013-03-08Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US13/959,801US9536710B2 (en)2013-02-252013-08-06Tunable gas delivery assembly with internal diffuser and angular injection
US15/393,828US20170110292A1 (en)2013-02-252016-12-29Tunable gas delivery assembly with internal diffuser and angular injection

Related Parent Applications (1)

Application NumberTitlePriority DateFiling Date
US13/959,801DivisionUS9536710B2 (en)2013-02-252013-08-06Tunable gas delivery assembly with internal diffuser and angular injection

Publications (1)

Publication NumberPublication Date
US20170110292A1true US20170110292A1 (en)2017-04-20

Family

ID=51386664

Family Applications (2)

Application NumberTitlePriority DateFiling Date
US13/959,801Expired - Fee RelatedUS9536710B2 (en)2013-02-252013-08-06Tunable gas delivery assembly with internal diffuser and angular injection
US15/393,828AbandonedUS20170110292A1 (en)2013-02-252016-12-29Tunable gas delivery assembly with internal diffuser and angular injection

Family Applications Before (1)

Application NumberTitlePriority DateFiling Date
US13/959,801Expired - Fee RelatedUS9536710B2 (en)2013-02-252013-08-06Tunable gas delivery assembly with internal diffuser and angular injection

Country Status (3)

CountryLink
US (2)US9536710B2 (en)
TW (2)TWI615499B (en)
WO (1)WO2014130230A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2020163428A1 (en)*2019-02-072020-08-13Mattson Technology, Inc.Gas supply with angled injectors in plasma processing apparatus
WO2024220119A1 (en)*2023-04-202024-10-24Applied Materials, Inc.Icp source gas delivery hub and nozzle

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US9388494B2 (en)*2012-06-252016-07-12Novellus Systems, Inc.Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9536710B2 (en)2013-02-252017-01-03Applied Materials, Inc.Tunable gas delivery assembly with internal diffuser and angular injection
WO2014149200A1 (en)2013-03-152014-09-25Applied Materials, Inc.Plasma reactor with highly symmetrical four-fold gas injection
US10119191B2 (en)*2016-06-082018-11-06Applied Materials, Inc.High flow gas diffuser assemblies, systems, and methods
KR102553629B1 (en)*2016-06-172023-07-11삼성전자주식회사Plasma processing apparatus
US20190032211A1 (en)*2017-07-282019-01-31Lam Research CorporationMonolithic ceramic gas distribution plate
CN110223904A (en)*2019-07-192019-09-10江苏鲁汶仪器有限公司A kind of plasma process system with Faraday shield device
US11454390B2 (en)*2019-12-032022-09-27Fisher Controls International LlcSpray heads for use with desuperheaters and desuperheaters including such spray heads
CN111081525B (en)*2019-12-312021-06-08江苏鲁汶仪器有限公司Device for blocking plasma backflow protection air inlet structure of process chamber
KR102781656B1 (en)*2020-04-062025-03-13램 리써치 코포레이션 Ceramic additive manufacturing techniques for gas injectors
CN113707527B (en)*2020-05-212022-07-29江苏鲁汶仪器有限公司 A separate air intake structure for blocking plasma reverse flow
CN113838735B (en)*2020-06-242024-11-26拓荆科技股份有限公司 Device for evenly distributing gas
KR102607844B1 (en)*2020-07-102023-11-30세메스 주식회사Apparatus for treating substrate and unit for supporting substrate
KR20220021206A (en)2020-08-132022-02-22삼성전자주식회사Plasma processing apparatus
CN118431054A (en)*2023-02-022024-08-02江苏鲁汶仪器股份有限公司 Edge air inlet device and plasma etching system

Citations (80)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5188671A (en)*1990-08-081993-02-23Hughes Aircraft CompanyMultichannel plate assembly for gas source molecular beam epitaxy
US5284519A (en)*1990-05-161994-02-08Simon Fraser UniversityInverted diffuser stagnation point flow reactor for vapor deposition of thin films
US5542559A (en)*1993-02-161996-08-06Tokyo Electron Kabushiki KaishaPlasma treatment apparatus
US5746875A (en)*1994-09-161998-05-05Applied Materials, Inc.Gas injection slit nozzle for a plasma process reactor
US5958140A (en)*1995-07-271999-09-28Tokyo Electron LimitedOne-by-one type heat-processing apparatus
US6143078A (en)*1998-11-132000-11-07Applied Materials, Inc.Gas distribution system for a CVD processing chamber
US6209480B1 (en)*1996-07-102001-04-03Mehrdad M. MoslehiHermetically-sealed inductively-coupled plasma source structure and method of use
US20010010257A1 (en)*1998-12-302001-08-02Tuqiang NiGas injection system for plasma processing
US20010015175A1 (en)*2000-02-212001-08-23Toshio MasudaPlasma processing system and apparatus and a sample processing method
US20010047760A1 (en)*1996-07-102001-12-06Moslehi Mehrdad M.Apparatus and method for multi-zone high-density inductively-coupled plasma generation
US6390019B1 (en)*1998-06-112002-05-21Applied Materials, Inc.Chamber having improved process monitoring window
US20020088545A1 (en)*2001-01-112002-07-11Lee Doo WonGas injector comprising block of ceramic material having gas injection holes extending therethrough, and etching apparatus incorporating the same
US6450117B1 (en)*2000-08-072002-09-17Applied Materials, Inc.Directing a flow of gas in a substrate processing chamber
US20020139665A1 (en)*1996-07-032002-10-03Tegal CorporationPlasma etch reactor and method
US20030070620A1 (en)*2001-10-152003-04-17Cooperberg David J.Tunable multi-zone gas injection system
US20030143328A1 (en)*2002-01-262003-07-31Applied Materials, Inc.Apparatus and method for plasma assisted deposition
US20030192645A1 (en)*2002-04-162003-10-16Applied Materials, Inc.Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US20040082251A1 (en)*2002-10-292004-04-29Applied Materials, Inc.Apparatus for adjustable gas distribution for semiconductor substrate processing
US20040168769A1 (en)*2002-05-102004-09-02Takaaki MatsuokaPlasma processing equipment and plasma processing method
US20040187779A1 (en)*2003-03-272004-09-30Park Young HoonThin film deposition reactor
US20040217217A1 (en)*2003-04-092004-11-04Samsung Electronics Co., Ltd.Gas supplying apparatus
US20050092435A1 (en)*2002-03-272005-05-05Tokyo Electron LimitedProcessing device, electrode, electrode plate, and processing method
US20050103267A1 (en)*2003-11-142005-05-19Hur Gwang H.Flat panel display manufacturing apparatus
US20050109460A1 (en)*2003-05-302005-05-26Dedontney Jay B.Adjustable gas distribution system
US20060016559A1 (en)*2004-07-262006-01-26Hitachi, Ltd.Plasma processing apparatus
US20060021568A1 (en)*2003-04-102006-02-02Tokyo Electron LimitedShower head structure and treating device
US20060096540A1 (en)*2004-11-112006-05-11Choi Jin HApparatus to manufacture semiconductor
US20060196603A1 (en)*2005-03-072006-09-07Applied Materials, Inc.Gas baffle and distributor for semiconductor processing chamber
US20060196420A1 (en)*2005-03-022006-09-07Andrey UshakovHigh density plasma chemical vapor deposition apparatus
US20060219362A1 (en)*2005-04-012006-10-05Geun-Jo HanGas injector and apparatus including the same
US20070119370A1 (en)*2005-11-042007-05-31Paul MaApparatus and process for plasma-enhanced atomic layer deposition
US20070169704A1 (en)*2006-01-262007-07-26Lam Research CorporationApparatus for shielding process chamber port having dual zone and optical access features
US20070187363A1 (en)*2006-02-132007-08-16Tokyo Electron LimitedSubstrate processing apparatus and substrate processing method
US20070256786A1 (en)*2006-05-032007-11-08Xiaoping ZhouApparatus for etching high aspect ratio features
US20070256785A1 (en)*2006-05-032007-11-08Sharma PamarthyApparatus for etching high aspect ratio features
US20070293043A1 (en)*2006-06-202007-12-20Lam Research CorporationEdge gas injection for critical dimension uniformity improvement
US20080078746A1 (en)*2006-08-152008-04-03Noriiki MasudaSubstrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
US20080083883A1 (en)*2006-10-062008-04-10Lam Research CorporationMethods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US20090042321A1 (en)*2007-03-232009-02-12Matsushita Electric Industrial Co., Ltd.Apparatus and method for plasma doping
US20090159211A1 (en)*2007-12-192009-06-25Hitachi High-Technologies CorporationPlasma processing apparatus
US20090159213A1 (en)*2007-12-192009-06-25Applied Materials, Inc.Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US20090159424A1 (en)*2007-12-192009-06-25Wei LiuDual zone gas injection nozzle
US20090236313A1 (en)*2008-03-202009-09-24Novellus Systems, Inc.Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
US20090250443A1 (en)*2008-04-032009-10-08Tes Co., Ltd.Plasma processing apparatus
US20090269506A1 (en)*2008-04-242009-10-29Seiji OkuraMethod and apparatus for cleaning of a CVD reactor
US20090272492A1 (en)*2008-05-052009-11-05Applied Materials, Inc.Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20100024727A1 (en)*2008-08-042010-02-04Samsung Electro-Mechanics Co., LtdShowerhead and chemical vapor deposition apparatus including the same
US20100068891A1 (en)*2006-11-092010-03-18Masanobu HatanakaMethod of forming barrier film
US20100089455A1 (en)*2008-10-092010-04-15Marcus Frank FLong distance gassing apparatus and methods
US20100180819A1 (en)*2007-04-172010-07-22Ulvac, Inc.Film-forming apparatus
US20100230387A1 (en)*2006-06-132010-09-16Tokyo Electron LimitedShower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method
US20100276084A1 (en)*2008-01-142010-11-04Liqiang YaoPlasma processing equipment and gas distribution apparatus thereof
US20100310772A1 (en)*2008-02-202010-12-09Tokyo Electron LimitedGas supply device
WO2011004987A2 (en)*2009-07-082011-01-13주식회사 유진테크Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates
WO2011023078A1 (en)*2009-08-272011-03-03北京北方微电子基地设备工艺研究中心有限责任公司Deep silicon etching device and gas intake system for deep silicon etching device
US20110048642A1 (en)*2009-09-022011-03-03Tokyo Electron LimitedPlasma processing apparatus
US20110056626A1 (en)*2009-09-102011-03-10Lam Research CorporationReplaceable upper chamber parts of plasma processing apparatus
US20110073564A1 (en)*2009-09-252011-03-31Applied Materials, Inc.Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor
US20110079356A1 (en)*2009-10-012011-04-07Kim MinshikSide gas injector for plasma reaction chamber
US20110114261A1 (en)*2008-07-092011-05-19Tokyo Electron LimitedPlasma processing apparatus
US20110162800A1 (en)*2009-12-042011-07-07Applied Materials, Inc.Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US20110198417A1 (en)*2010-02-122011-08-18Applied Materials, Inc.Process chamber gas flow improvements
US20110256645A1 (en)*2010-04-142011-10-20Applied Materials, Inc.Multiple precursor showerhead with by-pass ports
US20110291568A1 (en)*2010-05-262011-12-01Tokyo Electron LimtedPlasma processing apparatus and processing gas supply structure thereof
US20120091095A1 (en)*2010-10-152012-04-19Applied Materials, Inc.Method and apparatus for reducing particle defects in plasma etch chambers
US20120111271A1 (en)*2007-10-112012-05-10Begarney Michael JChemical vapor deposition reactor
WO2012071661A1 (en)*2010-11-302012-06-07Socpra Sciences Et Genie S.E.C.Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
US20120152900A1 (en)*2010-12-202012-06-21Applied Materials, Inc.Methods and apparatus for gas delivery into plasma processing chambers
WO2013051248A1 (en)*2011-10-072013-04-11東京エレクトロン株式会社Plasma processing apparatus
US20130098554A1 (en)*2011-10-252013-04-25Lam Research CorporationWindow and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US20130109159A1 (en)*2011-10-282013-05-02Applied Materials, Inc.Gas dispersion apparatus
US20130206066A1 (en)*2012-01-262013-08-15Samsung Electronics Co., Ltd.Thin film deposition apparatus
US20130284700A1 (en)*2012-04-262013-10-31Applied Materials, Inc.Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US20130295297A1 (en)*2012-05-012013-11-07Taiwan Semiconductor Manufacturing Co., Ltd.Semiconductor film formation apparatus and process
US20130344245A1 (en)*2012-06-252013-12-26Novellus Systems, Inc.Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20140020835A1 (en)*2012-07-202014-01-23Applied Materials, Inc.Symmetrical inductively coupled plasma source with symmetrical flow chamber
US20140073143A1 (en)*2012-09-122014-03-13Asm Ip Holdings B.V.Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor
US20140083615A1 (en)*2012-09-252014-03-27Gen Co., Ltd.Antenna assembly and a plasma processing chamber having the same
US20140209596A1 (en)*2013-01-252014-07-31Applied Materials, Inc.Electrostatic chuck with concentric cooling base
US20140237840A1 (en)*2013-02-252014-08-28Applied Materials, Inc.Tunable gas delivery assembly with internal diffuser and angular injection

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP3380091B2 (en)*1995-06-092003-02-24株式会社荏原製作所 Reactive gas injection head and thin film vapor phase growth apparatus
KR20030095801A (en)2002-06-142003-12-24주성엔지니어링(주)HPD-CVD apparatus having rotation type injector and gap filling method using the same
KR100862658B1 (en)*2002-11-152008-10-10삼성전자주식회사 Gas injection device of semiconductor processing system
KR100614648B1 (en)*2004-07-152006-08-23삼성전자주식회사 Substrate Processing Apparatus Used for Manufacturing Semiconductor Devices
KR101063752B1 (en)2009-06-082011-09-08주식회사 에스엠아이 Shower head of chemical vapor deposition apparatus
KR100996210B1 (en)2010-04-122010-11-24세메스 주식회사Gas injection unit and apparatus and method for depositing thin layer with the same
WO2014149200A1 (en)2013-03-152014-09-25Applied Materials, Inc.Plasma reactor with highly symmetrical four-fold gas injection

Patent Citations (96)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5284519A (en)*1990-05-161994-02-08Simon Fraser UniversityInverted diffuser stagnation point flow reactor for vapor deposition of thin films
US5188671A (en)*1990-08-081993-02-23Hughes Aircraft CompanyMultichannel plate assembly for gas source molecular beam epitaxy
US5542559A (en)*1993-02-161996-08-06Tokyo Electron Kabushiki KaishaPlasma treatment apparatus
US5746875A (en)*1994-09-161998-05-05Applied Materials, Inc.Gas injection slit nozzle for a plasma process reactor
US5958140A (en)*1995-07-271999-09-28Tokyo Electron LimitedOne-by-one type heat-processing apparatus
US20020139665A1 (en)*1996-07-032002-10-03Tegal CorporationPlasma etch reactor and method
US6209480B1 (en)*1996-07-102001-04-03Mehrdad M. MoslehiHermetically-sealed inductively-coupled plasma source structure and method of use
US20010047760A1 (en)*1996-07-102001-12-06Moslehi Mehrdad M.Apparatus and method for multi-zone high-density inductively-coupled plasma generation
US6390019B1 (en)*1998-06-112002-05-21Applied Materials, Inc.Chamber having improved process monitoring window
US6835275B1 (en)*1998-06-112004-12-28Michael N. GrimbergenReducing deposition of process residues on a surface in a chamber
US6143078A (en)*1998-11-132000-11-07Applied Materials, Inc.Gas distribution system for a CVD processing chamber
US20010010257A1 (en)*1998-12-302001-08-02Tuqiang NiGas injection system for plasma processing
US20010015175A1 (en)*2000-02-212001-08-23Toshio MasudaPlasma processing system and apparatus and a sample processing method
US6450117B1 (en)*2000-08-072002-09-17Applied Materials, Inc.Directing a flow of gas in a substrate processing chamber
US20020088545A1 (en)*2001-01-112002-07-11Lee Doo WonGas injector comprising block of ceramic material having gas injection holes extending therethrough, and etching apparatus incorporating the same
US20030070620A1 (en)*2001-10-152003-04-17Cooperberg David J.Tunable multi-zone gas injection system
US20030143328A1 (en)*2002-01-262003-07-31Applied Materials, Inc.Apparatus and method for plasma assisted deposition
US20050092435A1 (en)*2002-03-272005-05-05Tokyo Electron LimitedProcessing device, electrode, electrode plate, and processing method
US20030192645A1 (en)*2002-04-162003-10-16Applied Materials, Inc.Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US20040168769A1 (en)*2002-05-102004-09-02Takaaki MatsuokaPlasma processing equipment and plasma processing method
US20040082251A1 (en)*2002-10-292004-04-29Applied Materials, Inc.Apparatus for adjustable gas distribution for semiconductor substrate processing
US20040187779A1 (en)*2003-03-272004-09-30Park Young HoonThin film deposition reactor
US20040217217A1 (en)*2003-04-092004-11-04Samsung Electronics Co., Ltd.Gas supplying apparatus
US20060021568A1 (en)*2003-04-102006-02-02Tokyo Electron LimitedShower head structure and treating device
US20050109460A1 (en)*2003-05-302005-05-26Dedontney Jay B.Adjustable gas distribution system
US20050103267A1 (en)*2003-11-142005-05-19Hur Gwang H.Flat panel display manufacturing apparatus
US20060016559A1 (en)*2004-07-262006-01-26Hitachi, Ltd.Plasma processing apparatus
US20060096540A1 (en)*2004-11-112006-05-11Choi Jin HApparatus to manufacture semiconductor
US20060196420A1 (en)*2005-03-022006-09-07Andrey UshakovHigh density plasma chemical vapor deposition apparatus
US20060196603A1 (en)*2005-03-072006-09-07Applied Materials, Inc.Gas baffle and distributor for semiconductor processing chamber
US20060219362A1 (en)*2005-04-012006-10-05Geun-Jo HanGas injector and apparatus including the same
US20070119370A1 (en)*2005-11-042007-05-31Paul MaApparatus and process for plasma-enhanced atomic layer deposition
US20070119371A1 (en)*2005-11-042007-05-31Paul MaApparatus and process for plasma-enhanced atomic layer deposition
US20070169704A1 (en)*2006-01-262007-07-26Lam Research CorporationApparatus for shielding process chamber port having dual zone and optical access features
US20070187363A1 (en)*2006-02-132007-08-16Tokyo Electron LimitedSubstrate processing apparatus and substrate processing method
US20070256786A1 (en)*2006-05-032007-11-08Xiaoping ZhouApparatus for etching high aspect ratio features
US20070256785A1 (en)*2006-05-032007-11-08Sharma PamarthyApparatus for etching high aspect ratio features
US20100230387A1 (en)*2006-06-132010-09-16Tokyo Electron LimitedShower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method
US20070293043A1 (en)*2006-06-202007-12-20Lam Research CorporationEdge gas injection for critical dimension uniformity improvement
US20080078746A1 (en)*2006-08-152008-04-03Noriiki MasudaSubstrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
US20080083883A1 (en)*2006-10-062008-04-10Lam Research CorporationMethods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US20100068891A1 (en)*2006-11-092010-03-18Masanobu HatanakaMethod of forming barrier film
US20090042321A1 (en)*2007-03-232009-02-12Matsushita Electric Industrial Co., Ltd.Apparatus and method for plasma doping
US20100180819A1 (en)*2007-04-172010-07-22Ulvac, Inc.Film-forming apparatus
US20120111271A1 (en)*2007-10-112012-05-10Begarney Michael JChemical vapor deposition reactor
US20090159211A1 (en)*2007-12-192009-06-25Hitachi High-Technologies CorporationPlasma processing apparatus
US20090159213A1 (en)*2007-12-192009-06-25Applied Materials, Inc.Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US20090159424A1 (en)*2007-12-192009-06-25Wei LiuDual zone gas injection nozzle
US20100276084A1 (en)*2008-01-142010-11-04Liqiang YaoPlasma processing equipment and gas distribution apparatus thereof
US20100310772A1 (en)*2008-02-202010-12-09Tokyo Electron LimitedGas supply device
US20090236313A1 (en)*2008-03-202009-09-24Novellus Systems, Inc.Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
US20090250443A1 (en)*2008-04-032009-10-08Tes Co., Ltd.Plasma processing apparatus
US20090269506A1 (en)*2008-04-242009-10-29Seiji OkuraMethod and apparatus for cleaning of a CVD reactor
US20090275206A1 (en)*2008-05-052009-11-05Applied Materials, Inc.Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US20090272492A1 (en)*2008-05-052009-11-05Applied Materials, Inc.Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20110114261A1 (en)*2008-07-092011-05-19Tokyo Electron LimitedPlasma processing apparatus
US20100024727A1 (en)*2008-08-042010-02-04Samsung Electro-Mechanics Co., LtdShowerhead and chemical vapor deposition apparatus including the same
US20100089455A1 (en)*2008-10-092010-04-15Marcus Frank FLong distance gassing apparatus and methods
WO2011004987A2 (en)*2009-07-082011-01-13주식회사 유진테크Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates
US20120135145A1 (en)*2009-07-082012-05-31Sung Tae JeSubstrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates
WO2011023078A1 (en)*2009-08-272011-03-03北京北方微电子基地设备工艺研究中心有限责任公司Deep silicon etching device and gas intake system for deep silicon etching device
US20120138228A1 (en)*2009-08-272012-06-07Beijing Nmc Co., Ltd.Deep-trench silicon etching and gas inlet system thereof
US20110048642A1 (en)*2009-09-022011-03-03Tokyo Electron LimitedPlasma processing apparatus
US20110056626A1 (en)*2009-09-102011-03-10Lam Research CorporationReplaceable upper chamber parts of plasma processing apparatus
US20110073564A1 (en)*2009-09-252011-03-31Applied Materials, Inc.Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor
US20110079356A1 (en)*2009-10-012011-04-07Kim MinshikSide gas injector for plasma reaction chamber
US20110162800A1 (en)*2009-12-042011-07-07Applied Materials, Inc.Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US20110198417A1 (en)*2010-02-122011-08-18Applied Materials, Inc.Process chamber gas flow improvements
US20110253044A1 (en)*2010-04-142011-10-20Applied Materials, Inc.Showerhead assembly with metrology port purge
US20110256315A1 (en)*2010-04-142011-10-20Applied Materials, Inc.Showerhead assembly with gas injection distribution devices
US20110256692A1 (en)*2010-04-142011-10-20Applied Materials, Inc.Multiple precursor concentric delivery showerhead
US20110256645A1 (en)*2010-04-142011-10-20Applied Materials, Inc.Multiple precursor showerhead with by-pass ports
US20110291568A1 (en)*2010-05-262011-12-01Tokyo Electron LimtedPlasma processing apparatus and processing gas supply structure thereof
US20120091095A1 (en)*2010-10-152012-04-19Applied Materials, Inc.Method and apparatus for reducing particle defects in plasma etch chambers
US20190295826A1 (en)*2010-10-152019-09-26Applied Materials, Inc.Method and apparatus for reducing particle defects in plasma etch chambers
US10658161B2 (en)*2010-10-152020-05-19Applied Materials, Inc.Method and apparatus for reducing particle defects in plasma etch chambers
WO2012071661A1 (en)*2010-11-302012-06-07Socpra Sciences Et Genie S.E.C.Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
US20130248611A1 (en)*2010-11-302013-09-26Socpra Sciences Et Genie S.E.C.Epitaxial Deposition Apparatus, Gas Injectors, and Chemical Vapor Management System Associated Therewith
US20120152900A1 (en)*2010-12-202012-06-21Applied Materials, Inc.Methods and apparatus for gas delivery into plasma processing chambers
US20140262034A1 (en)*2011-10-072014-09-18Tokyo Electron LimitedPlasma processing apparatus
WO2013051248A1 (en)*2011-10-072013-04-11東京エレクトロン株式会社Plasma processing apparatus
US20130098554A1 (en)*2011-10-252013-04-25Lam Research CorporationWindow and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US20130109159A1 (en)*2011-10-282013-05-02Applied Materials, Inc.Gas dispersion apparatus
US20130206066A1 (en)*2012-01-262013-08-15Samsung Electronics Co., Ltd.Thin film deposition apparatus
US20130284700A1 (en)*2012-04-262013-10-31Applied Materials, Inc.Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9162236B2 (en)*2012-04-262015-10-20Applied Materials, Inc.Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US20130295297A1 (en)*2012-05-012013-11-07Taiwan Semiconductor Manufacturing Co., Ltd.Semiconductor film formation apparatus and process
US20130344245A1 (en)*2012-06-252013-12-26Novellus Systems, Inc.Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20140020837A1 (en)*2012-07-202014-01-23Applied Materials, Inc.Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
US20140020836A1 (en)*2012-07-202014-01-23Applied Materials, Inc.Inductively coupled plasma source with plural top coils over a ceiling and an independent side coil
US20140020835A1 (en)*2012-07-202014-01-23Applied Materials, Inc.Symmetrical inductively coupled plasma source with symmetrical flow chamber
US20140073143A1 (en)*2012-09-122014-03-13Asm Ip Holdings B.V.Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor
US20140083615A1 (en)*2012-09-252014-03-27Gen Co., Ltd.Antenna assembly and a plasma processing chamber having the same
US20140209596A1 (en)*2013-01-252014-07-31Applied Materials, Inc.Electrostatic chuck with concentric cooling base
US20140237840A1 (en)*2013-02-252014-08-28Applied Materials, Inc.Tunable gas delivery assembly with internal diffuser and angular injection
US9536710B2 (en)*2013-02-252017-01-03Applied Materials, Inc.Tunable gas delivery assembly with internal diffuser and angular injection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2020163428A1 (en)*2019-02-072020-08-13Mattson Technology, Inc.Gas supply with angled injectors in plasma processing apparatus
CN112437969A (en)*2019-02-072021-03-02玛特森技术公司Gas supply device with angled nozzle in plasma processing apparatus
WO2024220119A1 (en)*2023-04-202024-10-24Applied Materials, Inc.Icp source gas delivery hub and nozzle

Also Published As

Publication numberPublication date
WO2014130230A1 (en)2014-08-28
TW201732074A (en)2017-09-16
US9536710B2 (en)2017-01-03
TW201441414A (en)2014-11-01
TWI648425B (en)2019-01-21
TWI615499B (en)2018-02-21
US20140237840A1 (en)2014-08-28

Similar Documents

PublicationPublication DateTitle
US9536710B2 (en)Tunable gas delivery assembly with internal diffuser and angular injection
US11315760B2 (en)Symmetric plasma process chamber
US9162236B2 (en)Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US10626500B2 (en)Showerhead design
JP6646953B2 (en) Ceramic showerhead including central gas injector for adjustable convection-diffusion gas flow in semiconductor substrate processing equipment
US9447499B2 (en)Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US10770269B2 (en)Apparatus and methods for reducing particles in semiconductor process chambers
US20190148121A1 (en)Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity
US20190145002A1 (en)Showerhead and substrate processing device including the same
TWI627669B (en) Gas injection device for inductively coupled plasma chamber
US20160042925A1 (en)Baffle and substrate treating apparatus including the same
US12217943B2 (en)Substrate processing apparatus and electrostatic chuck
TW201618155A (en)Plasma processing apparatus and gas supply member
US10780447B2 (en)Apparatus for controlling temperature uniformity of a showerhead
KR100984121B1 (en)Apparatus for and method of treating substrate by plasma
CN105695957A (en) Air intake device and semiconductor processing equipment
KR100683255B1 (en) Plasma processing unit and exhaust unit
KR20060036727A (en) Gas Supply Nozzle of Process Chamber for Semiconductor Manufacturing

Legal Events

DateCodeTitleDescription
ASAssignment

Owner name:APPLIED MATERIALS, INC., CALIFORNIA

Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KNYAZIK, VLADIMIR;TANTIWONG, KYLE;BANNA, SAMER;AND OTHERS;REEL/FRAME:040804/0163

Effective date:20130731

STPPInformation on status: patent application and granting procedure in general

Free format text:DOCKETED NEW CASE - READY FOR EXAMINATION

STPPInformation on status: patent application and granting procedure in general

Free format text:NON FINAL ACTION MAILED

STPPInformation on status: patent application and granting procedure in general

Free format text:RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPPInformation on status: patent application and granting procedure in general

Free format text:FINAL REJECTION MAILED

STPPInformation on status: patent application and granting procedure in general

Free format text:DOCKETED NEW CASE - READY FOR EXAMINATION

STPPInformation on status: patent application and granting procedure in general

Free format text:NON FINAL ACTION MAILED

STCBInformation on status: application discontinuation

Free format text:ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION


[8]ページ先頭

©2009-2025 Movatter.jp