US20130280863A1 - Vertically stackable dies having chip identifier structures - Google Patents

Abstract

A particular method of making a stacked multi-die semiconductor device includes forming a stack of at least two dies. Each die includes a chip identifier structure that includes a first set of at least two through vias that are each hard wired to a set of external electrical contacts. Each die further includes chip identifier selection logic coupled to the chip identifier structure. Each die further includes a chip select structure that includes a second set of at least two through vias coupled to the chip identifier selection logic. The method further includes coupling each external electrical contact to a voltage source or ground. Each of the first set of through vias has a pad that is coupled to an adjacent through via and each of the second set of through vias is coupled to its own respective pad.

Description

I. CLAIM OF PRIORITY
• The present application claims priority from and is a divisional of U.S. patent application Ser. No. 12/793,081, filed Jun. 3, 2010, which claims priority from and is a Continuation-in-Part of U.S. patent application Ser. No. 12/574,919, filed Oct. 7, 2009, each of which is entitled “VERTICALLY STACKABLE DIES HAVING CHIP IDENTIFIER STRUCTURES.” Each of the above-referenced applications is incorporated by reference herein in its entirety.
II. FIELD
• The present disclosure is generally related to vertically stackable dies.
III. DESCRIPTION OF RELATED ART
• Vertical stacking of memory dies and chips may be used to increase memory density in a semiconductor device. In a vertically stacked memory die and logic die, the memory die size may be limited to be less than the logic die size because of stacking process throughput and other factors. This limits the usable memory density and leads to the use of next-generation memory dies to meet the usable memory density requirements. Vertically stacked memory dies may be used to meet the memory density requirements, but conventional vertically stacked memory dies have an increased stacking complexity related to sharing the same channel to the logic die and increased costs associated therewith, such as programming, sorting, marking, or separating each of the memory dies in the vertical stack of memory dies.
IV. SUMMARY
• Multiple dies of a vertical stack of two or more dies are substantially the same and the stack of dies is formed without programming, sorting, marking, or separating each die in the vertical stack. A physically predetermined chip identifier structure distinguishes each die in a stack and a channel interface may be shared among the stacked multiple dies. No non-volatile programming of the dies is needed. Forming the stack of dies without programming or sorting the stacked dies reduces the total cost and provides simpler chip logistics.
• In a particular embodiment, a semiconductor device is disclosed that includes a die comprising a first through via to communicate a chip identifier and other data. The semiconductor device also includes a chip identifier structure that comprises at least two through vias that are each hard wired to an external electrical contact.
• In another particular embodiment, a multi-die stacked semiconductor device is disclosed that includes a first die comprising a first chip identifier structure that comprises a number N of through vias that are each hard wired to a first set of external electrical contacts, the number N comprising an integer greater than one. The multi-die stacked semiconductor device also includes a second die comprising a second chip identifier structure that comprises N through vias that are each hard wired to a second set of electrical contacts.
• In another particular embodiment, a method of making a stacked multi-die semiconductor device is disclosed that includes forming a stack of N dies, where each die includes a chip identifier structure that comprises a first set of N through vias that are each hard wired to a set of external electrical contacts, chip identifier selection logic coupled to the chip identifier structure, and a chip select structure that comprises a second set of N through vias coupled to the chip identifier selection logic, wherein N is an integer greater than one. The method also includes coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground, where each of the first set of N through vias has a pad that is coupled to an adjacent through via and each of the second set of N through vias is coupled to its own respective pad.
• In another particular embodiment, a multi-die stacked semiconductor device is disclosed that includes a first die comprising first means for identifying a chip that comprises a number N of through vias that are each hard wired to a first set of means for making external electrical contact, the number N comprising an integer greater than one. The multi-die stacked semiconductor device also includes a second die comprising second means for identifying a chip that comprises N through vias that are each hard wired to a second set of means for making electrical contact.
• In another particular embodiment, a method is disclosed that includes receiving a chip identifier signal based on a position of a first die within a die stack. The chip identifier signal is received at the first die via multiple through vias of the first die. The method also includes determining, based on the received chip identifier signal, whether the first die is a particular die that is indicated by a received chip selection signal.
• One particular advantage provided by at least one of the disclosed embodiments is that each die of a vertical stack of two or more dies is substantially the same and the stack of dies is formed without programming, sorting, marking, or separating each die in the vertical stack. Using the same die without any programming or different sorting in the stacked dies reduces the total cost and provides simpler chip logistics. No non-volatile programming of the dies is needed. Other aspects, advantages, and features of the present disclosure will become apparent after review of the entire application, including the following sections: Brief Description of the Drawings, Detailed Description, and the Claims.
V. BRIEF DESCRIPTION OF THE DRAWINGS
• FIG. 1 is an illustrative diagram of a first embodiment of vertically stacked dies having a chip identifier structure;
• FIG. 2 is an illustrative diagram of an embodiment of chip identifier selection logic;
• FIG. 3 is an illustrative diagram of a second embodiment of vertically stacked dies having a chip identifier structure disposed in a package above a package substrate;
• FIG. 4 is are illustrative diagram of a third embodiment of vertically stacked dies having a chip identifier structure disposed above a mother die;
• FIG. 5 is an illustrative diagram of an embodiment of through vias coupled to pads of adjacent through vias;
• FIG. 6 is a flow diagram of an illustrative embodiment of a method of forming vertically stacked dies having a chip identifier structure;
• FIG. 7 is a block diagram of a particular embodiment of a portable communication device including a module having a multi-die stack with chip identifier structures; and
• FIG. 8 is a data flow diagram illustrating a manufacturing process for use with multi-die stacks having chip identifier structures.
VI. DETAILED DESCRIPTION
• Particular embodiments of the present disclosure are described below with reference to the drawings. In the description, common features are designated by common reference numbers through the drawings. Referring toFIG. 1, an illustrative diagram of a first embodiment of vertically stacked dies having a chip identifier structure is depicted and generally designated100. Avertical stack100 may include a first die102, a second die104, a third die106, and a fourth die108, with the fourth die108 stacked above the third die106 that is stacked above the second die104 that is stacked above the first die102. Each die102-108 includes asilicon substrate110 and ametal layer112. However, the substrate need not be limited to silicon. Representative embodiments may include any type of substrate material, including but not limited to glass and sapphire. Accordingly, although the term “Through Silicon Via” or TSV is used, the term is defined to include all types of through vias, including vias through glass and or sapphire substrates. Each die also includes at least one through silicon via (TSV)124 extending through thesilicon substrate110 to communicate a chip identifier and other data. Each die further includes achip identifier structure114 that includes at least two through silicon via (TSVs) that are each hard wired to an external electrical contact. In a particular embodiment, the external electrical contact is coupled to avoltage source VDD126 or to aground128. The voltage source VDD126 or theground128 may be received from a package substrate or a mother die, for example.
• Thechip identifier structure114 for each die includes a first column TSV116, a second column TSV118, a third column TSV120, and a fourth column TSV122, for example. Tracing through the connections in therespective metal layers112, the fourth column TSV122 of the fourth die108 is coupled to the third column TSV120 of the third die106, which is coupled to thesecond column TSV118 of the second die104, which is coupled to thefirst column TSV116 of the first die102, which is coupled to theground128. Similarly, the third column TSV120 of the fourth die108 is ho the second column TSV118 of the third die106, which is coupled to the first column TSV116 of the second die104, which is coupled to thefourth column TSV122 of the first die102, which is coupled to the voltage source VDD126. Likewise, the second column TSV118 of the fourth die108 is coupled to thefirst column TSV116 of the third die106, which is coupled to the fourth column TSV122 of the second die104, which is coupled to thethird column TSV120 of the first die102, which is also coupled to the voltage source VDD126. Finally, the first column TSV116 of the fourth die108 is coupled to the fourth column TSV122 of the third die106, which is coupled to the third column TSV120 of the second die104, which is coupled to thesecond column TSV118 of the first die102, which is also coupled to the voltage source VDD126.
• The connections between thechip identifier structures114 in therespective metal layers112 are the same in each die and are such that each die may be uniquely selected based on which column TSV116-122 is connected to theground128. For example, the first column TSV116 of the first die102 is connected to theground128, the second column TSV118 of the second die104 is connected to theground128, the third column TSV120 of the third die106 is connected to theground128, and the fourth column TSV122 of the fourth die108 is connected to theground128. Each die in thevertical stack100 may recognize its vertical location based on which column TSV116-122 is connected to theground128, for example. In an alternative embodiment, all but one of the column TSVs116-122 are coupled to theground128, while one of the column TSVs116-122 is coupled to thevoltage source VDD126, in which case each die may be uniquely selected based on which column TSV116-122 is connected to thevoltage source VDD126. Each die102-108 has the samechip identifier structure114 that includes the same TSV structure in eachsilicon substrate110 and the same wiring in eachmetal layer112.
• Each die of thevertical stack100 of two or more dies is substantially the same and thevertical stack100 of dies102,104,106,108 is formed without programming, sorting, marking, or separating each die in thevertical stack100. The physically predeterminedchip identifier structure114 distinguishes each die in thevertical stack100 and a channel interface may be shared among the stacked multiple dies102,104,106,108. Using the same die without any programming or different sorting in thevertical stack100 may reduce the total cost and provide simpler chip logistics. No non-volatile programming of the dies102,104,106,108 is needed.
• Referring toFIG. 2, an illustrative diagram of an embodiment of chip identifier selection logic is depicted and generally designated202. Each die in thevertical stack100 of dies102,104,106,108 ofFIG. 1 may receive a specific and different chip identifier signal from ahost device214 by the chipidentifier selection logic202. In a particular embodiment, an interface to thehost device214 is provided. Thehost device214 may be a separate device or a mother die, for example.
• Thehost device214 may access any specific die though a common access channel structure is shared among multiple dies, such as a commonaccess channel structure306 shown inFIG. 3 andFIG. 4 and described more fully below. Thehost device214 may provide chip select signals Chip ID[0:3] and data signals Data[0:n] via a shared interface between thehost device214 and the dies102-108 in thevertical stack100 of dies. The chip select signals Chip ID[0:3] and the data signals Data[0:n] may be applied to TSVs to be accessible to all dies102-108 in thevertical stack100 of dies. The data signals Data[0:n] may therefore be sent from thehost device214 via the commonaccess channel structure306 to any specific die, where the specific die is selected using the chipidentifier selection logic202. The shared interface between thehost device214 and thevertical stack100 of dies102,104,106,108 ofFIG. 1 is not illustrated inFIG. 2 for the sake of simplicity.
• In a particular embodiment, chipidentification decoding logic204 is coupled to thechip identifier structure114 ofFIG. 1 and accepts as inputs thecolumn TSVs116,118,120, and122 vialines206,208,210, and212, respectively. The chipidentifier selection logic202 may include the chipidentification decoding logic204 and may be responsive to the chip select signals Chip ID[0:3] from thehost device214. The chipidentifier selection logic202 may detect thevoltage source VDD126 ofFIG. 1 or theground128 at the TSVs in thechip identifier structure114. Signals from thefirst column TSV116 ofFIG. 1 may be input to the chipidentification decoding logic204 vialine206. Signals from thesecond column TSV118 ofFIG. 1 may be input to the chipidentification decoding logic204 vialine208. Signals from thethird column TSV120 ofFIG. 1 may be input to the chipidentification decoding logic204 vialine210. Signals from thefourth column TSV122 ofFIG. 1 may be input to the chipidentification decoding logic204 vialine212.
• Signal S[0] may be output from the chipidentification decoding logic204 vialine224 and may be a control signal to aselection circuit232 that may determine whether the first chip is selected. In order to determine whether the first chip is selected, signal Chip ID[0] on line216 from thehost device214 is output from the chipidentifier selection logic202 along aline240. Signal S[1] may be output from the chipidentification decoding logic204 vialine226 and may be a control signal to aselection circuit234 that may determine whether signal Chip ID[1] online218 from thehost device214 is output from the chipidentifier selection logic202 along theline240. Signal S[2] may be output from the chipidentification decoding logic204 vialine228 and may be a control signal to aselection circuit236 that may determine whether signal Chip ID[2] online220 from thehost device214 is output from the chipidentifier selection logic202 along theline240. Signal S[3] may be output from the chipidentification decoding logic204 vialine230 and may be a. control signal to aselection circuit238 that may determine whether signal Chip ID[3] online222 from thehost device214 is output from the chipidentifier selection logic202 along theline240.
• Using the first die102 ofFIG. 1 as an illustrative example, thefirst column TSV116 is connected to theground128 and thesecond column TSV118, thethird column TSV120, and thefourth column TSV122 are all connected to thevoltage source VDD126 as a result of the position of the first die102 within thevertical stack100 of dies. In this case, the input along theline206 would be a logic “low” and the inputs along thelines208,210, and212 would all be a logic “high,” The chipidentification decoding logic204 may invert the inputs so that the signal S[0] along theline224 is a logic “high” signal while the signals S[1], S[2], and S[3] along thelines226,228, and230, respectively, are all logic “low” signals. Because the signal S[0] is a logic “high,” the N-type Metal Oxide Semiconductor (NMOS) transistor of the pass gate of theselection circuit232 is turned on. The signal S[0] is also inverted to a logic “low,” which turns on the P-type Metal Oxide Semiconductor (PMOS) transistor of the pass gate of theselection circuit232. Because the NMOS and the PMOS are on, the pass gate of theselection circuit232 has a low impedance state that enables signal propagation, as opposed to a high impedance state when the NMOS and the PMOS are off. The signal Chip ID[0] along the line216 is inverted and passes through the low impedance pass gate of theselection circuit232 to be the selected output from the chipidentifier selection logic202 along theline240.
• By way of contrast, because the signal S[1] is a logic “low,” the NMOS transistor of the pass gate of theselection circuit234 is turned off. The signal S[1] is inverted to a logic “high,” which turns off the PMOS transistor of the pass gate of theselection circuit234. The signal Chip ID[1] along theline218 may be inverted, but does not pass through the high impedance pass gate of theselection circuit234. Similarly, because the signal S[2.] and S[3] are at a logic “low,” the pass gates of theselection circuit236 and theselection circuit238 are also at the high impedance state. As a result, based on the signals received at the TSVs116-122, the chipidentifier selection logic202 of the first die102 generates the output along theline240 based on the chip select signal Chip ID[0] and not the chip select signals Chip ID[1:3]. To illustrate, when the chip select signal Chip ID[0] has a “high” state, the output along theline240 is “low.” and when the chip select signal Chip ID[0] has a “low” state, the output along theline240 is “high.” In this way, the first die102 ofFIG. 1 may be selected or deselected based on the position of the first die102 in thevertical stack100 of dies and the chip select signals Chip ID[0:3] provided by thehost device214. When selected, the data signals Data[0:n] from thehost device214 may be accessed by the first die102 ofFIG. 1. When not selected, the data signals Data[0:n] may not be accessed by the first die102 and instead may be accessed by another die in thevertical stack100 of dies.
• Referring toFIG. 3, an illustrative diagram of a second embodiment of vertically stacked dies having a chip identifier structure disposed in a package above a package substrate is depicted and generally designated300. Thevertical stack100 ofFIG. 1 may be disposed in apackage302 above apackage substrate304. Each die of thevertical stack100 has a chipselect structure320 that includes a TSV for every die in thevertical stack100. The TSVs in the chipselect structures320 may be coupled together to formcolumns322 extending through thevertical stack100. Each die of thevertical stack100 also has the chipidentifier selection logic202 ofFIG. 2 coupled to thechip identifier structure114 and to the chipselect structure320. Each die of thevertical stack100 further has the commonaccess channel structure306 that includes a plurality ofTSVs308 to provide the data signals Data[0:n] to be accessible to each die.
• Thepackage substrate304 supplies thevoltage source126 and theground128 that are coupled to thechip identifier structures114 of thevertical stack100 as described above with respect toFIG. 1. Thepackage substrate304 has a plurality ofpackage balls310 formed on a side of thepackage substrate304 opposite to thevertical stack100. The plurality ofpackage balls310 includes a chip select package ball for every die in thevertical stack100. For example, a. chip select package ball (CS0)312 may be coupled to the first of thecolumns322 of TSVs in the chipselect structures320, a chip select package ball (CS1)314 may be coupled to the second of thecolumns322 of TSVs in the chipselect structures320, a chip select package ball (CS2)316 may be coupled to the third of thecolumns322 of TSVs in the chipselect structures320, and a chip select package ball (CS3)318 may be coupled to the fourth of thecolumns322 of TSVs in the chipselect structures320. In a particular embodiment, where there are N dies in thevertical stack100, the plurality ofpackage balls310 includes at least N chip select package halls coupled to a set of N TSVs in the chipselect structure320 of one die of thevertical stack100.
• In a particular embodiment, each die in thevertical stack100 is a memory die, providing an increased total memory density. Each die in thevertical stack100 has the same implementation and no programming or sorting or marking or separating of the dies would be necessary before packaging in thepackage302. Thechip identifier structure114 TSV columns may be hard wired in thepackage substrate304. Any number N of dies may be stacked in thevertical stack100, where N is an integer greater than one.
• Referring toFIG. 4, an illustrative diagram of a third embodiment of vertically stacked dies having a chip identifier structure disposed above a mother die is depicted and generally designated400. Thevertical stack100 ofFIG. 1 may be disposed above a mother die402. Each die of thevertical stack100 has the chipselect structure320 that includes a TSV for every die in thevertical stack100. The TSVs in the chipselect structures320 may be coupled together to form thecolumns322 extending through thevertical stack100. Each die of thevertical stack100 also has the chipidentifier selection logic202. ofFIG. 2 coupled to thechip identifier structure114 and to the chipselect structure320. Each die of thevertical stack100 further has the commonaccess channel structure306 that includes the plurality ofTSVs308.
• The mother die402 supplies thevoltage source126 and theground128 that are coupled to thechip identifier structures114 of thevertical stack100 as described above with respect toFIG. 1. Thevoltage source126 and theground128 may be disposed in ametal layer406 of the mother die402. Thevoltage source126 and theground128 may be coupled to thechip identifier structures114 of thevertical stack100 bychip identifier TSVs408 extending through a silicon substrate101 of the mother die402, onechip identifier TSV408 for every die in thevertical stack100. In a particular embodiment, where there are N dies in thevertical stack100, a set of Nchip identifier TSVs408 is coupled to a set of N TSVs in thechip identifier structure114 of one die of thevertical stack100.
• A set of chipselect TSVs410, one for each of the dies in thevertical stack100, may extend through thesilicon substrate404 of the mother die402. The set of chipselect TSVs410 may be coupled to thecolumns322 formed by the TSVs in the chipselect structures320 extending through thevertical stack100. For example, a chip select signal (CS0) may be coupled by the first chipselect TSV410 to the first of thecolumns322 of TSVs in the chipselect structures320, providing access to the first of the dies of thevertical stack100. A chip select signal (CS1) may be coupled by the second chipselect TSV410 to the second of thecolumns322 of TSVs in the chipselect structures320, providing access to the second of the dies of thevertical stack100. A chip select signal (CS2) may be coupled by the third chipselect TSV410 to the third of thecolumns322 of TSVs in the chipselect structures320, providing access to the third of the dies of thevertical stack100. A chip select signal (CS3) may be coupled by the fourth chipselect TSV410 to the fourth of thecolumns322 of TSVs in the chipselect structures320, providing access to the fourth of the dies of thevertical stack100. In a particular embodiment, where there are N dies in thevertical stack100, a set of N chipselect TSVs410 is coupled to a set of N TSVs in the chipselect structure320 of one die of thevertical stack100.
• A set of commonaccess channel TSVs412 may extend through the silicon substrate401 of the mother die402. Each of the commonaccess channel TSVs112 may correspond to one of the plurality ofTSVs308 included in the commonaccess channel structures306 of each die in thevertical stack100.
• In a particular embodiment, the mother die402 includes a logic chip and each die in thevertical stack100 is a memory die, providing an increased total memory density. Each of the chipselect TSVs410 and each of the commonaccess channel TSVs412 may be coupled to a memory channelphysical layer414 of the mother die402. Any number N of memory dies may be stacked in thevertical stack100, where N is an integer greater than one,
• Referring toFIG. 5, an illustrative diagram of an embodiment of through silicon vias (TSVs) coupled to pads of adjacent through silicon vias (TSVs) is depicted and generally designated500. ATSV502, which may be a TSV in a chip identifier structure similar to thechip identifier structure114 ofFIG. 1, has apad504 that may be coupled by aline506 to anadjacent TSV508 in the chip identifier structure. TheTSV508 has apad510 that may be coupled by aline512 to anadjacent TSV514 in the chip identifier structure. TheTSV514 has apad516 that may be coupled by aline518 to anadjacent TSV520 in the chip identifier structure. TheTSV520 has apad522 that may be coupled by aline524 to theadjacent TSV502 in the chip identifier structure. Thelines506,512,518, and524 may he disposed in a metal layer similar to themetal layer112 ofFIG. 1. While only fourTSVs502,508,514, and520 are shown inFIG. 5, this arrangement where a TSV in a chip identifier structure has a pad that is coupled to an adjacent TSV in the chip identifier structure may be generalized to any number N of TSVs, with N being an integer greater than one. In a chip select structure, similar to the chipselect structure320 ofFIG. 3 andFIG. 4, each TSV may be coupled to its own respective pad.
• A chip identifier structure including TSVs as illustrated inFIG. 5 may enable a. distinct chip identification signal to he conveyed to each die in a stack as a result of each TSV receiving a signal that is applied to a pad of an adjacent TSV from another die. For example, a chip identifier signal may be received based on a position of a first die within a die stack, where the chip identifier signal is received at the first die via multiple through silicon vias of the first die. To illustrate, the chip identifier signal may include voltages at eachTSV116,118,120, and122 of thechip identifier structure114 ofFIG. 1. The first die may determine, based on the received chip identifier signal, whether the first die is a particular die that is indicated by a received chip selection signal. For example, the first die may decode the chip identifier signal via the chipidentification decoding logic204 ofFIG. 2 and compare a resulting signal (such as one of the signals S[0:3] ofFIG. 2) to the received chip selection signal, as described with respect to FIG.
• In a particular embodiment, each die may receive a distinct chip ID signal as a result of the wiring between TSVs and adjacent pads and without implementing active logic or other circuitry to increment or otherwise generate or modify a received chip identifier signal. Using the structure ofFIG. 5 as an illustrative example, afirst TSV502 of a chip identifier structure of a first die may have apad504 that is coupled to asecond TSV508 of the chip identifier structure (such as the chip identifier structure14 ofFIG. 1), thesecond TSV508 adjacent to thefirst TSV502. At least a portion of the chip identifier signal, such as a signal corresponding to theground128 that is provided to one of themultiple TSVs116,118,120, and122, is received at thepad504 from a first TSV of a second die and is conveyed to thesecond TSV508 of the first die. To illustrate, thefirst column TSV116 of the die102 ofFIG. 1 may convey the signal corresponding to theground128 via a pad of the die104 that is coupled to thesecond TSV118 of the die104.
• Thevertical stack100 ofFIG. 1,FIG. 3, andFIG. 4 provides an example of a multi-die stacked semiconductor device that has at least a first die102 having thechip identifier structure114 that has a number N of TSVs that are each hard wired to a first set of external electrical contacts, the number N being an integer greater than one. The number N may be equal to the number of dies in thevertical stack100. The multi-die stacked semiconductor device (e.g., the vertical stack100) also has at least a second die104 having thechip identifier structure114 that has N TSVs that are each hard wired to a second set of external electrical contacts. In a particular embodiment, each external electrical contact in the first set of the external electrical contacts and in the second set of external electrical contacts is coupled to theground128 or to thevoltage source VDD126. Each of the N TSVs may have a pad that is coupled to an adjacent TSV in each of thechip identifier structures114, as shown inFIG. 5, for example.
• Referring toFIG. 6, a flow diagram of an illustrative embodiment of a method of forming vertically stacked dies having a chip identifier structure is depicted and generally designated600. Themethod600 of making a stacked multi-die semiconductor device includes forming a stack of N dies, at602, where N is an integer greater than one. Each of the N dies includes a chip identifier structure that includes a first set of N TSVs that are each hard wired to a set of external electrical contacts. Each of the N dies also includes chip identifier selection logic coupled to the chip identifier structure. Each of the N dies further includes a chip select structure that includes a second set of N TSVs coupled to the chip identifier selection logic. For example, thevertical stack100 ofFIG. 1 may be a stack of four dies102,104,106, and108, each die including thechip identifier structure114 that includes a first set of four TSVs that are each hard wired to a set of external electrical contacts. Each die of thevertical stack100 may also include the chipidentifier selection logic202 ofFIG. 2 that is coupled to thechip identifier structure114. Each die of thevertical stack100 may further include the chipselect structure320 ofFIG. 3 andFIG. 4 that includes a second set of four TSVs coupled to the chipidentifier selection logic202.
• Themethod600 also includes coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground, at604. Each of the first set of N TSVs has a pad that is coupled to an adjacent TSV. Each of the second set of N TSVs is coupled to its own respective pad. For example, each TSV in thechip identifier structure114 ofFIG. 1 may be either coupled to thevoltage source VDD126 or to theground128. Each of the first set of four TSVs may have a pad that is coupled to an adjacent TSV as shown inFIG. 5, for example. Each of the second set of four TSVs in the chipselect structure320 ofFIG. 3 andFIG. 4 may be coupled to its own respective pad. In a particular embodiment, each die of thevertical stack100 ofFIG. 1,FIG. 3, andFIG. 4 further includes a common access channel structure that includes a plurality of TSVs. For example, each die of thevertical stack100 ofFIG. 3 andFIG. 4 may further include the commonaccess channel structure306 that may include a plurality ofTSVs308.
• FIG. 7 is a block diagram of particular embodiment of asystem700 including a module having a multi-die stack with a chip identifier structure havingmultiple TSVs764. Thesystem700 may be implemented in a portable electronic device and includes aprocessor710, such as a digital signal processor (DSP), coupled to computer readable medium, such as amemory732, storing computer readable instructions, such assoftware766. Thesystem700 includes the module having a multi-die stack with a chip identifier structure havingmultiple TSVs764. In an illustrative example, the module having a multi-die stack with a chip identifier structure havingmultiple TSVs764 includes any of the embodiments of a multi-die stack with a chip identifier structure ofFIG. 1,FIG. 3, orFIG. 4, produced in accordance with the embodiment ofFIG. 6, or any combination thereof. The module having a multi-die stack with a chip identifier structure havingmultiple TSVs764 may be in theprocessor710 or may be a separate device or circuitry (not shown). In a particular embodiment, as shown inFIG. 7, the module having a multi-die stack with a chip identifier structure havingmultiple TSVs764 is accessible to the digital signal processor (DSP)710. In another particular embodiment, thememory732 may include the module having a multi-die stack with a chip identifier structure havingmultiple TSVs764.
• Acamera interface768 is coupled to theprocessor710 and also coupled to a camera, such as avideo camera770. Adisplay controller726 is coupled to theprocessor710 and to adisplay device728. A coder/decoder (CODEC)734 can also be coupled to theprocessor710. Aspeaker736 and amicrophone738 can be coupled to theCODEC734. Awireless interface740 can be coupled to theprocessor710 and to awireless antenna742.
• In a particular embodiment, theprocessor710, thedisplay controller726, thememory732, theCODEC734, thewireless interface740, and thecamera interface768 are included in a system-in-package or system-on-chip device722. In a particular embodiment, aninput device730 and apower supply744 are coupled to the system-on-chip device722. Moreover, in a particular embodiment, as illustrated inFIG. 7, thedisplay device728, theinput device730, thespeaker736, themicrophone738, thewireless antenna742, thevideo camera770, and thepower supply744 are external to the system-on-chip device722. However, each of thedisplay device728, theinput device730, thespeaker736, themicrophone738, thewireless antenna742, thevideo camera770, and thepower supply744 can be coupled to a component of the system-on-chip device722, such as an interface or a controller.
• The foregoing disclosed devices and functionalities (such as the devices ofFIG. 1,FIG. 2,FIG. 3,FIG. 4, orFIG. 5, the method ofFIG. 6, or any combination thereof) may be designed and configured into computer files (e.g., RTL, GDSII, GERBER, etc) stored on computer readable media. Some or all such files may be provided to fabrication handlers who fabricate devices based on such files. Resulting products include semiconductor wafers that are then cut into semiconductor die and packaged into a semiconductor chip. The semiconductor chips are then employed in electronic devices.FIG. 8 depicts a particular illustrative embodiment of an electronicdevice manufacturing process800.
• Physical device information802 is received in themanufacturing process800, such as at aresearch computer806. Thephysical device information802 may include design information representing at least one physical property of a semiconductor device, such as themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4. For example, thephysical device information802 may include physical parameters, material characteristics, and structure information that is entered via auser interface804 coupled to theresearch computer806. Theresearch computer806 includes aprocessor808, such as one or more processing cores, coupled to a computer readable medium such as amemory810. Thememory810 may store computer readable instructions that are executable to cause theprocessor808 to transform thephysical device information802 to comply with a file format and to generate alibrary file812.
• In a particular embodiment, thelibrary file812 includes at least one data file including the transformed design information. For example, thelibrary file812 may include a library of semiconductor devices including themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4, that is provided for use with an electronic design automation (EDA)tool820.
• Thelibrary file812 may be used in conjunction with theFDA tool820 at adesign computer814 including aprocessor816, such as one or more processing cores, coupled to amemory818. TheFDA tool820 may be stored as processor executable instructions at thememory818 to enable a user of thedesign computer814 to design a circuit using themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4, of thelibrary file812. For example, a user of thedesign computer814 may entercircuit design information822 via auser interface824 coupled to thedesign computer814. Thecircuit design information822 may include design information representing at least one physical property of a semiconductor device, such as themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4. To illustrate, the circuit design property may include identification of particular circuits and relationships to other elements in a circuit design, positioning information, feature size information, interconnection information, or other information representing a physical property of a semiconductor device.
• Thedesign computer814 may be configured to transform the design information, including thecircuit design information822, to comply with a file format. To illustrate, the file formation may include a. database binary file format representing planar geometric shapes, text labels, and other information about a circuit layout in a hierarchical format, such as a Graphic Data System (GDSII) file format. The design computer811 may be configured to generate a data file including the transformed design information, such as aGDSII file826 that includes information describing themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4, in addition to other circuits or information. To illustrate, the data file may include information corresponding to a system-on-chip (SOC) that includes themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4 and that also includes additional electronic circuits and components within the SOC.
• TheGDSII file826 may be received at afabrication process828 to manufacture themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4, according to transformed information in theGDSII file826. For example, a device manufacture process may include providing the GDSII file82,6 to amask manufacturer830 to create one or more masks, such as masks to be used for photolithography processing, illustrated as arepresentative mask832. Themask832 may be used during the fabrication process to generate one ormore wafers834, which may be tested and separated into dies, such as arepresentative die836. Thedie836 includes a circuit for use with themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4.
• Thedie836 may be provided to apackaging process838 where thedie836 is incorporated into arepresentative package840. For example, thepackage810 may include multiple dies836, such as themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, themulti-die device400 ofFIG. 4, or a system-in-package (SiP) arrangement, or any combination thereof. Thepackage840 may be configured to conform to one or more standards or specifications, such as Joint Electron Device Engineering Council (JEDEC) standards. Thepackaging process838 may include a processor coupled to a computer-readable tangible medium storing instructions executable by a computer. The processor may be integrated into an electronic device, such as a computer or an electronic packaging device. The instructions may include instructions that are executable by the computer to initiate forming a stack of N dies, where N is an integer greater than one. Each of the N dies includes a chip identifier structure that includes a first set of N TSVs that are each hard wired to a set of external electrical contacts. Each of the N dies also includes chip identifier selection logic coupled to the chip identifier structure. Each of the N dies further includes a chip select structure that includes a second set of N TSVs coupled to the chip identifier selection logic. The instructions may also include instructions that are executable by the computer to initiate coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground. Each of the first set of N TSVs has a pad that is coupled to an adjacent TSV. Each of the second set of N TSVs is coupled to its own respective pad. Execution at thepackaging process838 of the instructions stored in the computer-readable tangible medium may result in thepackage840 including multiple dies836, such as themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, themulti-die device400 ofFIG. 4, or any combination thereof.
• Information regarding thepackage840 may be distributed to various product designers, such as via a component library stored at acomputer846. Thecomputer846 may include aprocessor848, such as one or more processing cores, coupled to amemory850. A printed circuit board (PCB) tool may be stored as processor executable instructions at thememory850 to processPCB design information842 received from a user of thecomputer846 via auser interface844. ThePCB design information842 may include physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device corresponding to thepackage840 including themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4.
• Thecomputer846 may be configured to transform thePCB design information842 to generate a data file, such as a GERBER file852 with data that includes physical positioning information of a packaged semiconductor device on a circuit board, as well as layout of electrical connections such as traces and vias, where the packaged semiconductor device corresponds to thepackage840 including themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4. In other embodiments, the data file generated by the transformed PCB design information may have a format other than a GERBER format.
• TheGERBER file852 may be received at aboard assembly process854 and used to create PCBs, such as arepresentative PCB856, manufactured in accordance with the design information stored within theGERBER file852. For example, the GERBER file852 may be uploaded to one or more machines for performing various steps of a PCB production process. ThePCB856 may be populated with electronic components including thepackage840 to form a representative printed circuit assembly (PCA)858.
• ThePCA858 may be received at aproduct manufacture process860 and integrated into one or more electronic devices, such as a first representativeelectronic device862 and a second representativeelectronic device864. As an illustrative, non-limiting example, the first representativeelectronic device862, the second representativeelectronic device864, or both, may be selected from the group of a set top box, a music player, a video player, an entertainment unit, a navigation device, a. communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer. As another illustrative, non-limiting example, one or more of theelectronic devices862 and864 may be remote units such as mobile phones, hand-held personal communication systems (PCS) units, portable data units such as personal data assistants, global positioning system (GPS) enabled devices, navigation devices, fixed location data units such as meter reading equipment, or any other device that stores or retrieves data or computer instructions, or any combination thereof. AlthoughFIG. 8 illustrates remote units according to teachings of the disclosure, the disclosure is not limited to these exemplary illustrated units. Embodiments of the disclosure may be suitably employed in any device which includes active integrated circuitry including memory and on-chip circuitry.
• Thus, themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4, may be fabricated, processed, and incorporated into an electronic device, as described in theillustrative process800. One or more aspects of the embodiments disclosed with respect toFIGS. 1-6 may be included at various processing stages, such as within thelibrary file812, theGDSII file826, and the GERBER file852, as well as stored at thememory810 of theresearch computer806, thememory818 of thedesign computer814, thememory850 of thecomputer846, the memory of one or more other computers or processors (not shown) used at the various stages, such as at theboard assembly process854, and also incorporated into one or more other physical embodiments such as themask832, thedie836, thepackage840, thePCA858, other products such as prototype circuits or devices (not shown), or any combination thereof. For example, the GDSII file826 or thefabrication process828 can include a computer readable tangible medium storing instructions executable by a computer, the instructions including instructions that are executable by the computer to initiate formation of themulti-die device100 ofFIG. 1, themulti-die device300 ofFIG. 3, or themulti-die device400 ofFIG. 4. Although various representative stages of production from a physical device design to a final product are depicted, in other embodiments fewer stages may be used or additional stages may be included. Similarly, theprocess800 may be performed by a single entity, or by one or more entities performing various stages of theprocess800.
• Those of skill would further appreciate that the various illustrative logical blocks, configurations, modules, circuits, and method steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software executed by a processing unit, or combinations of both. Various illustrative components, blocks, configurations, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or executable processing instructions depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.
• The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in random access memory (RAM), a magnetoresistive random access memory (MRAM), a spin-torque-transfer magnetoresistive random access memory (STT-MRAM), flash memory, read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), registers, hard disk, a removable disk, a compact disc read-only memory (CD-ROM), or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor. The processor and the storage medium may reside in an application-specific integrated circuit (ASIC). The ASIC may reside in a computing device or a user terminal in the alternative, the processor and the storage medium may reside as discrete components in a computing device or user terminal.
• The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the disclosed embodiments. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the principles defined herein may be applied to other embodiments without departing from the scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope possible consistent with the principles and novel features as defined by the following claims.

Claims (23)

What is claimed is:

1. A method of making a stacked multi-die semiconductor device, the method comprising:

forming a stack of N dies, wherein each die comprises:

a chip identifier structure that comprises a first set of N through vias that are each hard wired to a set of external electrical contacts;

chip identifier selection logic coupled to the chip identifier structure; and

a chip select structure that comprises a second set of N through vias coupled to the chip identifier selection logic, wherein N is an integer greater than one; and

coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground, wherein each of the first set of N through vias has a pad that is coupled to an adjacent through via and each of the second set of N through vias is coupled to its own respective pad.

2. The method ofclaim 1, wherein each die further comprises a common access channel structure that comprises a plurality of through vias.

3. The method ofclaim 1, wherein the stack of the N dies is formed on a package substrate that supplies the voltage source and the ground and the package substrate has a plurality of package balls formed on a side of the package substrate opposite the stack of the N dies, the plurality of package balls comprising at least N chip select package balls coupled to the second set of N through vias in the chip select structure of one die of the stack of N dies.

4. The method ofclaim 3 wherein the stack of N dies comprises a stack of N memory dies.

5. The method ofclaim 1, wherein the stack of the N dies is formed on a mother die that supplies the voltage source and the ground and the mother die comprises a third set of N through vias coupled to the first set of N through vias the chip identifier structure of one die of the stack of N dies and a fourth set of N through vias coupled to the second set of N through vias in the chip select structure of the one die of the stack of N dies.

6. The method ofclaim 5, wherein the mother die comprises a logic chip, the stack of N dies comprises a stack of N memory dies, and the fourth set of N through vias is coupled to a memory channel physical layer of the mother die.

7. The method ofclaim 1, wherein each die of the stack of N dies is substantially the same and the stack of N dies is formed without programming, sorting, marking, or separating each die of the stack of N dies.

8. The method ofclaim 1, wherein the forming and the coupling are initiated by a processor integrated into an electronic device.

9. The method ofclaim 1, further comprising integrating the stacked multi-die semiconductor device into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

10. A method comprising:

a first step for forming a stack of N dies, wherein each die comprises:

a chip identifier structure that comprises a first set of N through vias that are each hard wired to a set of external electrical contacts;

chip identifier selection logic coupled to the chip identifier structure; and

a chip select structure that comprises a second set of N through vias coupled to the chip identifier selection logic, wherein N is an integer greater than one; and

a second step for coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground, wherein each of the first set of the N through vias has a pad that is coupled to an adjacent through via and each of the second set of the N through vias is coupled to its own respective pad.

11. The method ofclaim 10, wherein the first step and second step are initiated by a processor integrated into an electronic device.

12. A method comprising:

receiving design information representing at least one physical property of a semiconductor device, the semiconductor device comprising:

a first die comprising a first chip identifier structure that comprises a number N of through vias that are each hard wired to a first set of external electrical contacts, the number N comprising an integer greater than one; and

a second die stacked above the first die, the second die comprising a second chip identifier structure that comprises N through vias that are each hard wired to a second set of electrical contacts;

transforming the design information to comply with a file format; and

generating a data file comprising the transformed design information.

13. The method ofclaim 12, wherein the data file comprises a GDSII format.

14. A method comprising:

receiving a data file comprising design information corresponding to a semiconductor device; and

fabricating the semiconductor device according to the design information, wherein the semiconductor device comprises:

a first die comprising a first chip identifier structure that comprises a number N of through vias that are each hard wired to a first set of external electrical contacts, the number N comprising an integer greater than one; and

a second die stacked above the first die, the second die comprising a. second chip identifier structure that comprises N through vias that are each hard wired to a second set of electrical contacts.

15. The method ofclaim 14, wherein the data file has a GDSII format.

16. A method comprising:

receiving design information comprising physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device comprising a semiconductor structure comprising:

a first die comprising a first chip identifier structure that comprises a number N of through vias that are each hard wired to a first set of external electrical contacts, the number N comprising an integer greater than one; and

a second die stacked above the first die, the second die comprising a second chip identifier structure that comprises N through vias that are each hard wired to a second set of electrical contacts; and

transforming the design information to generate a data file.

17. The method ofclaim 16, wherein the data file has a GERBER format.

18. A method comprising:

receiving a data file comprising design information comprising physical positioning information of a packaged semiconductor device on a circuit board; and

manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device comprises a semiconductor structure comprising:

a first die comprising a first chip identifier structure that comprises a number N of through vias that are each hard wired to a first set of external electrical contacts, the number N comprising an integer greater than one; and

a second die stacked above the first die, the second die comprising a second chip identifier structure that comprises N through vias that are each hard wired to a second set of electrical contacts.

19. The method ofclaim 18, wherein the data file has a GERBER format.

20. The method ofclaim 18, further comprising integrating the circuit board into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

21. A computer-readable tangible medium storing instructions executable by a computer, the instructions comprising:

instructions that are executable by the computer to initiate forming a stack of N dies, wherein each die comprises:

a chip identifier structure that comprises a first set of N through vias that are each hard wired to a set of external electrical contacts;

chip identifier selection logic coupled to the chip identifier structure; and

a chip select structure that comprises a second set of N through vias coupled to the chip identifier selection logic, wherein N is an integer greater than one; and

instructions that are executable by the computer to initiate coupling each external electrical contact in each set of external electrical contacts to a voltage source or to ground, wherein each of the first set of the N through vias has a pad that is coupled to an adjacent through via and each of the second set of the N through vias is coupled to its own respective pad.

22. A method comprising:

receiving a chip identifier signal based on a position of a first die within a die stack, wherein the chip identifier signal is received at the first die via multiple through vias of the first die;

and determining, based on the received chip identifier signal, whether the first die is a particular die that is indicated by a received chip selection signal.

23. The method ofclaim 22, wherein a first through via of a chip identifier structure of the first die has a pad that is coupled to a second through via of the chip identifier structure, the second through via adjacent to the first through via, and wherein at least a portion of the chip identifier signal is received at the pad from a first through via of a second die and is conveyed to the second through via of the first die.

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