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US20130162229A1 - Charge pump feedback control device and method using the same - Google Patents

Charge pump feedback control device and method using the same
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Publication number
US20130162229A1
US20130162229A1US13/776,811US201313776811AUS2013162229A1US 20130162229 A1US20130162229 A1US 20130162229A1US 201313776811 AUS201313776811 AUS 201313776811AUS 2013162229 A1US2013162229 A1US 2013162229A1
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United States
Prior art keywords
signal
charge pump
modulation
phase
output voltage
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Abandoned
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US13/776,811
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Cheng-Pang Chan
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Realtek Semiconductor Corp
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Realtek Semiconductor Corp
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Priority to US13/776,811priorityCriticalpatent/US20130162229A1/en
Assigned to REALTEK SEMICONDUCTOR CORP.reassignmentREALTEK SEMICONDUCTOR CORP.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: CHAN, CHENG-PANG
Publication of US20130162229A1publicationCriticalpatent/US20130162229A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

Charge pump feedback control device and method are provided. The device is coupled to the charge pump unit which receives an input voltage so as to generate an output voltage and has switches and at least one capacitor, the device includes: a compensation unit, a modulation unit, and a phase control unit. The compensation unit receives the output voltage, compensates the output voltage for stability, and generates an error signal. The modulation unit receives the error signal, modulates the error signal, and correspondingly generates a modulation signal. The phase control unit receives the modulation signal so as to generate phase signal, and controls the plurality of switches of the charge pump unit according to the plurality of phase signal so as to generate the output voltage through the input voltage charging/discharging at least one capacitor of the charge pump unit.

Description

Claims (8)

What is claimed is:
1. A charge pump feedback control device, coupled to a charge pump unit which receives an input voltage so as to generate an output voltage and has a plurality of switches and at least one capacitor, the device comprising:
a comparator, coupled to the charge pump unit, wherein an output end of the comparator is coupled to at least one capacitor and generates a comparative signal after comparing the output voltage and a reference voltage; and
a modulation unit, coupled to the comparator, receiving the error signal, modulating the error signal, and correspondingly generating a modulation signal of pulse skipping modulation; and
a phase control unit, coupled to the modulation unit, receiving the modulation signal so as to generate a plurality of phase signal, controlling the plurality of switches of the charge pump unit according to the plurality of phase signal so as to generate the output voltage through the input voltage charging/discharging the at least one capacitor of the charge pump unit.
2. The charge pump feedback control device according toclaim 1, further comprising:
a voltage divider, coupled between the charge pump unit and the comparator, receiving the output voltage generated from the charge pump unit, and dividing the output voltage for the comparator.
3. The charge pump feedback control device according toclaim 1, wherein the modulation unit is a voltage controlled oscillator (VCO), coupled to the compensation unit for receiving the error signal, and generates the modulation signal using pulse frequency modulation according to the error signal.
4. The charge pump feedback control device according toclaim 3, wherein the compensation unit comprises:
an oscillator, used for generating an oscillation frequency; and
a switch, coupled to the comparator and the oscillator, wherein the oscillation signal being pass when the comparative signal is at a high voltage level, and the oscillation signal being cut off when the comparative signal is at low voltage level so as to generate the modulation signal of pulse skipping modulation.
5. A method for feedback control of charge pump, comprising:
controlling an input voltage to charge/discharge at least one capacitor for generating an output voltage according to a plurality of phase signal;
comparing a voltage level of the output voltage to generate an comparative signal;
generating a modulation signal by skipping the output voltage according to the comparative signal; and
generating the plurality of phase signal according to the modulation signal.
6. The method for feedback control of charge pump according toclaim 5, further comprising:
dividing the output voltage.
7. The method for feedback control of charge pump according toclaim 6, wherein the modulation signal is a pulse skipping modulation signal.
8. The method for feedback control of charge pump according toclaim 7, wherein the pulse skipping modulation is performed by a switch controlled by a voltage level of the comparative signal, the modulation signal being pass when the comparative signal is at a high voltage level, and the modulation signal being cut off when the comparative signal is at low voltage level.
US13/776,8112011-04-272013-02-26Charge pump feedback control device and method using the sameAbandonedUS20130162229A1 (en)

Priority Applications (1)

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US13/776,811US20130162229A1 (en)2011-04-272013-02-26Charge pump feedback control device and method using the same

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
TW1001146232011-04-27
TW100114623ATWI456874B (en)2011-04-272011-04-27Device and method for a feedback control of switch capacitive regulator
US13/457,052US8797088B2 (en)2011-04-272012-04-26Charge pump feedback control device and method using the same
US13/776,811US20130162229A1 (en)2011-04-272013-02-26Charge pump feedback control device and method using the same

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US13/457,052DivisionUS8797088B2 (en)2011-04-272012-04-26Charge pump feedback control device and method using the same

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US20130162229A1true US20130162229A1 (en)2013-06-27

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US13/457,052ActiveUS8797088B2 (en)2011-04-272012-04-26Charge pump feedback control device and method using the same
US13/776,811AbandonedUS20130162229A1 (en)2011-04-272013-02-26Charge pump feedback control device and method using the same

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CN (1)CN102761244B (en)
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US8836412B2 (en)2013-02-112014-09-16Sandisk 3D LlcCharge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en)2013-06-182015-03-17Sandisk Technologies Inc.Efficient voltage doubler
US9007046B2 (en)2013-06-272015-04-14Sandisk Technologies Inc.Efficient high voltage bias regulation circuit
US9024680B2 (en)2013-06-242015-05-05Sandisk Technologies Inc.Efficiency for charge pumps with low supply voltages
US9077238B2 (en)2013-06-252015-07-07SanDisk Technologies, Inc.Capacitive regulation of charge pumps without refresh operation interruption
US9083231B2 (en)2013-09-302015-07-14Sandisk Technologies Inc.Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en)2013-12-092015-10-06Sandisk Technologies Inc.Dynamic load matching charge pump for reduced current consumption
CN105094193A (en)*2014-05-042015-11-25中芯国际集成电路制造(上海)有限公司 Low Dropout Regulator
US9520776B1 (en)2015-09-182016-12-13Sandisk Technologies LlcSelective body bias for charge pump transfer switches
USRE46263E1 (en)2010-12-202017-01-03Sandisk Technologies LlcCharge pump system that dynamically selects number of active stages
US9647536B2 (en)2015-07-282017-05-09Sandisk Technologies LlcHigh voltage generation using low voltage devices
US9917507B2 (en)2015-05-282018-03-13Sandisk Technologies LlcDynamic clock period modulation scheme for variable charge pump load currents

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KR102571572B1 (en)*2018-12-052023-08-29에스케이하이닉스 주식회사Semiconductor device and semiconductor system for detecting voltage-drop level
CN109905813B (en)*2019-04-102021-06-08启攀微电子(上海)有限公司Self-adaptive pseudo closed-loop charge pump circuit
CN113302827B (en)*2019-04-182023-03-03华为技术有限公司Multiphase signal control circuit and method
EP3826183B1 (en)*2019-11-212023-06-21Murata Manufacturing Co., Ltd.A charge-pump circuitry and a method for high voltage generation with improved psrr
US11424356B2 (en)*2020-03-162022-08-23Raytheon CompanyTransistor having resistive field plate
CN111293879B (en)*2020-04-082025-05-02南京源峰微电子有限公司 A driving method and device of a current mode charge pump
US11557964B2 (en)*2020-06-012023-01-17Qualcomm IncorporatedHigh-efficiency low-ripple burst mode for a charge pump
US12388361B2 (en)*2020-06-022025-08-12Qualcomm IncorporatedBattery charging circuit and methods for trickle charging and precharging a dead multi-cell-in-series battery
CN112233287B (en)*2020-10-192023-01-24北京安恒利通科技股份公司Automatic unlocking method of intelligent lock and intelligent lock system
IL278835B (en)*2020-11-192022-01-01Visic Tech LtdDynamic slew rate controller
CN114696806A (en)*2020-12-292022-07-01广州昂瑞微电子技术有限公司 Circuit for Fast Switching of RF Switches
TWI751878B (en)*2021-01-062022-01-01瑞鼎科技股份有限公司Charge pump circuit
CN113765369B (en)*2021-09-012024-01-23深圳市爱协生科技股份有限公司Novel voltage conversion circuit for converting positive voltage into negative voltage in complex power domain
CN116961413B (en)*2023-09-182024-03-15杭州深谙微电子科技有限公司Charge pump circuit

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8710907B2 (en)2008-06-242014-04-29Sandisk Technologies Inc.Clock generator circuit for a charge pump
USRE46263E1 (en)2010-12-202017-01-03Sandisk Technologies LlcCharge pump system that dynamically selects number of active stages
US20130063118A1 (en)*2011-09-092013-03-14Qui Vi NguyenCharge Pump System Dynamically Reconfigurable For Read And Program
US8699247B2 (en)*2011-09-092014-04-15Sandisk Technologies Inc.Charge pump system dynamically reconfigurable for read and program
US8836412B2 (en)2013-02-112014-09-16Sandisk 3D LlcCharge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8860501B2 (en)2013-02-112014-10-14Sandisk 3D LlcCharge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en)2013-06-182015-03-17Sandisk Technologies Inc.Efficient voltage doubler
US9024680B2 (en)2013-06-242015-05-05Sandisk Technologies Inc.Efficiency for charge pumps with low supply voltages
US9077238B2 (en)2013-06-252015-07-07SanDisk Technologies, Inc.Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en)2013-06-272015-04-14Sandisk Technologies Inc.Efficient high voltage bias regulation circuit
US9083231B2 (en)2013-09-302015-07-14Sandisk Technologies Inc.Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en)2013-12-092015-10-06Sandisk Technologies Inc.Dynamic load matching charge pump for reduced current consumption
CN105094193A (en)*2014-05-042015-11-25中芯国际集成电路制造(上海)有限公司 Low Dropout Regulator
US9917507B2 (en)2015-05-282018-03-13Sandisk Technologies LlcDynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en)2015-07-282017-05-09Sandisk Technologies LlcHigh voltage generation using low voltage devices
US9520776B1 (en)2015-09-182016-12-13Sandisk Technologies LlcSelective body bias for charge pump transfer switches

Also Published As

Publication numberPublication date
CN102761244A (en)2012-10-31
CN102761244B (en)2015-12-16
TW201244344A (en)2012-11-01
TWI456874B (en)2014-10-11
US20120274394A1 (en)2012-11-01
US8797088B2 (en)2014-08-05

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ASAssignment

Owner name:REALTEK SEMICONDUCTOR CORP., TAIWAN

Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHAN, CHENG-PANG;REEL/FRAME:029873/0820

Effective date:20130226

STCBInformation on status: application discontinuation

Free format text:ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION


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