US20120318773A1 - Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control - Google Patents

Abstract

The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

Description

CROSS REFERENCE TO RELATED APPLICATION
• This application claims benefit of U.S. Provisional Patent Application No. 61/497,370, filed Jun. 15, 2011, which is incorporated by reference in its entirety.
BACKGROUND
• 1. Field of the Invention
• The present invention generally relates to methods and apparatus for controlling photoresist line width roughness and, more specifically, to methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control in semiconductor processing technologies.
• 2. Description of the Related Art
• Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors and resistors) on a single chip. The evolution of chip designs continually requires faster circuitry and greater circuit density. The demands for greater circuit density necessitate a reduction in the dimensions of the integrated circuit components.
• As the dimensions of the integrated circuit components are reduced (e.g. to sub-micron dimensions), more elements are required to be put in a given area of a semiconductor integrated circuit. Accordingly, lithography processes have become more and more challenging to transfer even smaller features onto a substrate precisely and accurately without damage. In order to transfer precise and accurate features onto a substrate, a desired high resolution lithography process requires having a suitable light source that may provide radiation at a desired wavelength range for exposure. Furthermore, the lithography process requires transferring features onto a photoresist layer with minimum photoresist line width roughness (LWR). After all, a defect-free photomask is required to transfer desired features onto the photoresist layer. Recently, an extreme ultraviolet (EUV) radiation source has been utilized to provide short exposure wavelengths so as to provide a further reduced minimum printable size on a substrate. However, at such small dimensions, the roughness of the edges of a photoresist layer has become harder and harder to control.
• FIG. 1 depicts an exemplary top isometric sectional view of asubstrate100 having a patternedphotoresist layer104 disposed on atarget material102 to be etched.Openings106 are defined between the patternedphotoresist layer104 readily to expose theunderlying target material102 for etching to transfer features onto thetarget material102. However, inaccurate control or low resolution of the lithography exposure process may cause in poor critical dimension control in thephotoresist layer104, thereby resulting inunacceptable LWR108.Large LWR108 of thephotoresist layer104 may result in inaccurate feature transfer to thetarget material102, thus, eventually leading to device failure and yield loss.
• Therefore, there is a need for a method and an apparatus to control and minimize LWR so as to obtain a patterned photoresist layer with desired critical dimensions.
SUMMARY
• The present invention provides methods and an apparatus for controlling and modifying LWR of a photoresist layer with enhanced electron spin control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.
• In another embodiment, a method for controlling line width roughness of a photoresist includes providing a substrate having a patterned photoresist layer in a processing chamber, supplying a gas mixture into the processing chamber, generating a plasma in the gas mixture having electrons moving in a circular mode from the gas mixture, generating a magnetic field to enhance the electrons in the plasma moving in the circular mode to a substrate surface, and trimming an edge profile of the patterned photoresist layer disposed on the substrate surface with the enhanced electrons.
• In another embodiment, a method for controlling line width roughness of a photoresist layer disposed on a substrate includes providing a substrate having a patterned photoresist layer disposed thereon into a processing chamber, supplying a gas mixture into the processing chamber, generating a plasma in the gas mixture, extracting electrons out of the plasma, generating a magnetic field to enhance the electrons moving in a circular mode to a substrate surface, and trimming an edge profile of the patterned photoresist layer disposed on the substrate surface with the enhanced plasma.
• In yet another embodiment, a method for controlling line width roughness of a photoresist layer disposed on a substrate includes supplying a gas mixture into a processing chamber having a substrate disposed therein, wherein the substrate has a patterned photoresist layer disposed thereon, generating a plasma in the processing chamber from the gas mixture supplied in the processing chamber, applying a voltage to a shield plate disposed in the processing chamber to filter ions from the plasma and leaving mild reactive species, directing the mild reactive species through a control plate, applying a DC or AC power to a group of one or more electromagnetic coils disposed around an outer circumference of the processing chamber to generate a magnetic field, enhancing movement of the mild reactive species in circular mode by passing the mild reactive species through the magnetic field, and trimming an edge profile of the patterned photoresist layer using the mild reactive species.
BRIEF DESCRIPTION OF THE DRAWINGS
• So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
• FIG. 1 depicts a top isometric sectional view of an exemplary structure of a patterned photoresist layer disposed on a substrate conventionally in the art;
• FIG. 2A depicts a schematic cross-sectional view of an inductively coupled plasma (ICP) reactor with enhanced electron spin control used according to one embodiment of the invention;
• FIG. 2B depicts an electron trajectory diagram according to one embodiment of the invention;
• FIG. 3 depicts an electron trajectory diagram passing through a beam control plate disposed in the ICP reactor depicted inFIG. 2;
• FIG. 4 depicts a flow diagram of one embodiment of performing a photoresist line width roughness control process according to one embodiment of the present invention;
• FIG. 5 depicts a top view of electron trajectories traveled adjacent to a photoresist layer according to one embodiment of the present invention; and
• FIG. 6 depicts a profile of a line width roughness of a photoresist layer disposed on a substrate according to one embodiment of the invention.
• FIG. 7 depicts one embodiment of a control plate and/or a shield plate;
• FIG. 8 depicts another embodiment of a control plate and/or a shield plate; and
• FIG. 9 depicts yet another embodiment of a control plate and/or a shield plate.
• To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
• It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
DETAILED DESCRIPTION
• Embodiments of the present invention include methods and apparatus for controlling LWR of a photoresist layer disposed on a substrate. The LWR of a photoresist layer may be controlled by performing an ICP process with enhanced electron spin control on a photoresist layer after an exposure/development process. The ICP process is performed to provide a chemical and electron grinding process on a nanometer scale with enhanced electron spin control to smooth the edge of the photoresist layer pattern with sufficient electron spin momentum, thereby providing a smooth pattern edge of the photoresist layer with minimum pattern edge roughness for subsequent etching processes. The ICP process with enhanced electron spin control may also be used to etch a target material disposed underneath the photoresist layer on the substrate subsequent to the photoresist line edge roughness minimization process.
• FIG. 2A depicts a schematic, cross-sectional diagram of one embodiment of anICP reactor200 suitable for performing plasma processing with enhanced electron spin control according to the present invention. One such etch reactor that may be adapted for performing the invention may be available from Applied Materials, Inc., of Santa Clara, Calif. It is contemplated that other suitable plasma processing chambers may also be employed herein, including those from other manufacturers.
• Theplasma reactor200 includes aprocessing chamber248 having achamber body210. Theprocessing chamber248 is a high vacuum vessel having avacuum pump228 coupled thereto. Thechamber body210 of theprocessing chamber248 includes atop wall222, asidewall224 and abottom wall226 defining aninterior processing region212 therein. The temperature of thesidewall224 is controlled using liquid-containing conduits (not shown) that are located in and/or around thesidewall224. Thebottom wall226 is connected to anelectrical ground230.
• Theprocessing chamber248 includes asupport pedestal214. Thesupport pedestal214 extends through thebottom wall226 of theprocessing chamber248 into theinterior processing region212. Thesupport pedestal214 may receive asubstrate250 to be disposed thereon for processing.
• Aplasma generator source202 is attached to top of thechamber body210 configured to supply electrons to theinterior processing region212. A plurality ofcoils208 may be disposed around theplasma generator source202 to insist creating inductively coupled plasma from theplasma generator source202.
• Processing gases may be introduced to theinterior processing region212 from agas source206 coupled to theprocessing chamber248. The processing gases from thegas source206 are supplied to theinterior processing region212 through theplasma generator source202. Current is applied to thecoil208 from a power source which creates an electric field that dissociates the processing gases. The processing gases dissociated by thecoils208 form anelectron beam249 to be delivered to theinterior processing region212 for processing.
• A group of one or more coil segments or electromagnetic coils221 (shown as221A and221B) are disposed around an outer circumference of alower portion211 of thechamber body210 adjacent to theinterior processing region212. Power to the coil segment(s) ormagnets221 is controlled by a DC power source or a low-frequency AC power source (not shown). Theelectromagnetic coils221 generate a magnetic field in a direction perpendicular to the substrate surface where theelectron beam249 is introduced into theprocessing chamber248. As the electrons from theelectron beam249 may not have sufficient momentum to reach down to theinterior processing region212 further down to anupper surface253 of thesubstrate250, the group of the coil segments orelectromagnetic coils221 may be disposed at thelower portion211 of the chamber body210 (e.g., close to the interior processing region212) to enhance spinning and/or whirling of the electrons down to theupper surface253 of thesubstrate250. The interaction between the electric field and magnetic field generated from the group of the coil segments orelectromagnetic coils221 causes theelectron beam249 having enhanced electron spinning and/or whirling momentum to reach down to the surface of thesubstrate250. It is noted that other magnetic field sources capable of generating sufficient magnetic field strength to promote an electron beam (e-beam) source may also be used.
• In one embodiment, ashield plate262 is disposed in theprocessing chamber248 above thesupport pedestal214. Theshield plate262 is a substantially flat plate comprising a plurality ofapertures270. Theshield plate262 may be made of a variety of materials compatible with processing needs, comprising one ormore apertures270 that define desired open areas in theshield plate262. In one embodiment, theshield plate262 may be fabricated from a material selected from a group consisting of copper or copper coated ceramics. The open areas of the shield plate262 (i.e., the size and density of the apertures270) assist in controlling the amount of ions/electrons which mainly consist of an electron beam and small amounts of ions formed from theplasma generator source202 to theinterior processing region212 above theupper surface253 of thesubstrate250. Accordingly, theshield plate262 acts as an ion/electron filter (or electron controller) that controls the electron density and/or ion density in the volume passing through theshield plate262 to theupper surface253 of thesubstrate250.
• During processing, a voltage from apower source260 may be applied to theshield plate262. The voltage potential applied on theshield plate262 may attract ions from the plasma, thereby efficiently filtering the ions from the plasma, while allowing only neutral species, such as radicals and electrons, to pass through theapertures270 of theshield plate262. Thus, by reducing/filtering the amount of ions through theshield plate262, grinding or smoothing of the structures formed on the substrate by neutral species, radicals, or electrons, i.e., mild reactive species, can be processed in a more controlled manner. Therefore, the mild reactive species may reduce the likelihood of undesired erosion sputter, or overly aggressive ion bombardment that may cause to the substrate surface to roughen, thereby resulting in precise smoothing performance and critical dimension uniformity. The voltage applied to theshield plate262 may be supplied at a range sufficient to attract or retain ions from the plasma, thereby repelling the neutral species, radicals, or electrons from the ions generated in the plasma. Thus, the mild reactive species are extracted from the plasma by theshield plate262. In one embodiment, the voltage is applied to theshield plate262 from thepower source260 between about 50 volts DC and about 200 volts DC. In another embodiment, the mild reactive species are extracted from the plasma by theshield plate262 are predominantly electrons.
• Acontrol plate264 is disposed below theshield plate262 and above thesupport pedestal214. Thecontrol plate264 has a plurality ofapertures268 that allow the neutral species, radicals, or electrons filtered through theshield plate262 to pass therethrough into theinterior processing region212. Thecontrol plate264 is positioned in a spaced-apart relationship with theshield plate262 at apredetermined distance266. In another embodiment, thecontrol plate264 is attached to theshield plate262 with minimum space in between. In one embodiment, thedistance266 between theshield plate262 and thecontrol plate264 is less than about 20 mm.
• A voltage from apower source251 may be applied to thecontrol plate264, so as to create a voltage potential (e.g., an electrical potential) that interacts with the magnetic field generated from the group of the coil segments or electromagnetic coils221 (shown as221A and221B). The electrical potential generated by thecontrol plate264 along with the magnetic field generated by the group of the coil segments orelectromagnetic coils221 assist and enhance maintaining sufficient momentum and energy to keep the neutral species, radicals, or electrons spinning down to theupper surface253 of thesubstrate250. Furthermore, the neutral species, radicals, or electrons passing through theapertures268 of thecontrol plate264 may be directed in a predetermined path, thereby confining the trajectory of the neutral species, radicals, or electrons in a predetermined path to reach to a desired area on theupper surface253 of thesubstrate250. When passing through thecontrol plate264, the magnified field may cause the neutral species, radicals, or electrons passing through to keep moving in a circular mode and spinning toward to theupper surface253 of thesubstrate250. The spin electrons have to grid the structures with sufficient momentum to bottoms of the structures formed on theupper surface253 of thesubstrate250.
• In one embodiment, thecontrol plate264 may have different materials or different characteristics. Thecontrol plate264 may comprise more than one zone or segments having at least one characteristic that is different from each other. For example, thecontrol plate264 may have a number of zones with different configurations including various geometries (e.g., sizes, shapes and open areas) and the zones may be made of the same or different materials, or be adapted to have different potential bias or different powers. By providing combinations of zone configurations, materials, powers, and/or potential bias, the spatial distribution of the neutral species, radicals, and electrons in the plasma may be modified in a localized manner, allowing customization of process characteristics, such as smoothing uniformity or locally enhanced or reduced smoothing rates (e.g., to tailor to different pattern densities in different parts of a substrate) and so on. Such amulti-zone control plate264 may be used to actively control the neutral species, radicals, and electrons distribution, and thus, allow for enhanced process control. More embodiment of thecontrol plate264 will be further discussed below with reference toFIGS. 7-9.
• During substrate processing, gas pressure within the interior of theprocessing chamber248 may be controlled in a predetermined range. In one embodiment, the gas pressure within theinterior processing region212 of theprocessing chamber248 is maintained at about 0.1 to 999 mTorr. Thesubstrate250 may be maintained at a temperature of between about 10 to about 500 degrees Celsius.
• Furthermore, theprocessing chamber248 may include atranslation mechanism272 configured to translate thesupport pedestal214 and thecontrol plate264 relative to one another. In one embodiment, thetranslation mechanism272 is coupled to thesupport pedestal214 to move thesupport pedestal214 laterally relative to thecontrol plate264. In another embodiment, thetranslation mechanism272 is coupled to theplasma generator source202 and/or thecontrol plate264 and/or theshield plate262 to move theplasma generator source202 and/or thecontrol plate264 and/or theshield plate262 laterally relative to thesupport pedestal214. In yet another embodiment, thetranslation mechanism272 moves one or more ofplasma generator source202, thecontrol plate264 andshield plate262 laterally relative to thesupport pedestal214. Any suitable translation mechanism may be used, such as a conveyor system, rack and pinion system, an x/y actuator, a robot, electronic motors, pneumatic actuators, hydraulic actuators, or other suitable mechanism.
• Thetranslation mechanism272 may be coupled to acontroller240 to control the scan speed at which thesupport pedestal214 andplasma generator source202 and/or thecontrol plate264 and/or theshield plate262 move relative to one another. In addition, translation of thesupport pedestal214 and theplasma generator source202 and/or thecontrol plate264 and/or theshield plate262 relative to one another may be configured to be along a path perpendicular to thepredetermined trajectory274 of the neutral species, radicals, or electrons theupper surface253 of thesubstrate250. In one embodiment, thetranslation mechanism272 moves at a constant speed, of approximately 2 millimeters per seconds (mm/s). In another embodiment, the translation of thesupport pedestal214 and theplasma generator source202 and/or thecontrol plate264 and/or theshield plate262 relative to one another may be moved along other paths as desired.
• Thecontroller240, including a central processing unit (CPU)244, amemory242, and supportcircuits246, is coupled to the various components of thereactor200 to facilitate control of the processes of the present invention. Thememory242 can be any computer-readable medium, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote to thereactor200 orCPU244. Thesupport circuits246 are coupled to theCPU244 for supporting theCPU244 in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. A software routine or a series of program instructions stored in thememory242, when executed by theCPU244, causes thereactor200 to perform a plasma process of the present invention.
• FIG. 2A only shows one exemplary configuration of a plasma reactor that can be used to practice the invention. For example, other types of reactors may utilize different types of plasma power and magnetic power coupled into the plasma chamber using different coupling mechanisms. In some applications, different types of plasma may be generated in a different chamber from the one in which the substrate is located, e.g., remote plasma source, and the plasma subsequently guided into the chamber using techniques known in the art.
• FIG. 3 depicts an electron trajectory diagram passing through thecontrol plate264 depicted inFIG. 2 according to one embodiment of the invention. As the filtered neutral species, radicals, and electrons (e.g., electron beam source) passing through theshield plate262 are accelerated toward theupper surface253 of thesubstrate250, the filtered neutral species, radicals, and electrons (e.g., electron beam source) subsequently passing through thecontrol plate264 may be confined to pass through theapertures268 formed in thecontrol plate264. As the group ofelectromagnetic coils221 are disposed around thecontrol plate264, the neutral species, radicals, and electrons (e.g., electron beam source) passing therethrough may keep orbiting around and travelling down in thepredetermined trajectory274 confined by theapertures268 of thecontrol plate264 and reach desired regions on theupper surface253 of thesubstrate250. By utilization of thecontrol plate264, thetrajectory274 of the neutral species, radicals, and electrons (e.g., electron beam source) may be efficiently controlled in a manner with enhanced electron spinning momentum so as to enable electrons to travel deep down to the bottom of the structures formed on the substrate while continuing to spin around the horizontal plane so that the electrons grind and smooth the roughness from the edge of the structures formed on thesubstrate250.
• FIG. 4 illustrates a flow diagram of one embodiment of performing a photoresistLWR control process400 according to one embodiment of the invention. Theprocess400 may be stored inmemory242 as instructions that executed by thecontroller240 to cause theprocess400 to be performed in an ICP processing chamber, such as theICP reactor200 depicted inFIG. 2A or other suitable reactors.
• Theprocess400 begins at ablock402 by transferring a substrate, such as thesubstrate250 depicted inFIG. 2A, into theprocessing chamber248 for processing. Thesubstrate250 may have atarget material512 to be etched disposed thereon, as shown inFIG. 6, disposed under aphotoresist layer514. In one embodiment, thetarget material512 to be etched using the photoresistLWR control process400 may be a dielectric layer, a metal layer, a ceramic material, or other suitable material. In one embodiment, thetarget material512 to be etched may be a dielectric material formed as a gate structure or a contact structure or an inter-layer dielectric structure (ILD) utilized in semiconductor manufacturing. Suitable examples of the dielectric material include SiO₂, SiON, SiN, SiC, SiOC, SiOCN, amorphous-carbon (a-C), or the like. In another embodiment, thetarget material512 to be etched may be a metal material formed as an inter-metal dielectric structure (IMD) or other suitable structures. Suitable examples of metal layers include Cu, Al, W, Ni, Cr, or the like.
• Atblock404, a photoresistLWR control process400 may be performed on thesubstrate250 to grind, modify and trimedges516 of thephotoresist layer514, as shown inFIG. 5. The photoresistLWR control process400 is performed providing a source of electrons. In one embodiment, the electrons are providing by generating an ICP in theprocessing chamber248. The ICP is generated by theplasma generator source202 disposed in theprocessing chamber248. As discussed above, the plasma as generated may include different types of reactive species, such as electrons, charges, ions, neutral species, and so on either with positive or negative charges. The excited plasma is used to extract electrons which are moved and accelerated in a circular motion toward theupper surface253 of thesubstrate250.
• Atblock406, as the plasma is advanced toward the substrate surface, the plasma then passes through theshield plate262 disposed in theprocessing chamber248. A voltage is applied to theshield plate262 to create a voltage potential, so as to attract ions from the plasma, thereby efficiently filtering ions from the plasma, while allowing only neutral species, such as radicals and electrons (e.g., electron beam source), to pass through theapertures270 of theshield plate262 to the substrate surface. In one embodiment, the voltage is applied to theshield plate262 frompower source260 between about 50 volts DC and about 200 volts DC.
• Atblock408, after passing through theshield plate262, the filtered plasma (e.g., electron beam source) then travels through thecontrol plate264. Thecontrol plate264 may confine the filtered plasma passing therethrough to a predetermined path so as to increase collimation of the filtered plasma (e.g., electron beam source) such that the mild reactive species fall on certain regions of theupper surface253 of thesubstrate250. The filtered plasma (e.g., electron beam source) is accelerated to maintain a substantially helical movement circulated by the magnetic field generated from the group of theelectromagnetic coils221 such that the mild reactive species have sufficient momentum to maintain a spinning motion down to theupper surface253 of thesubstrate250. A power supplied to thecontrol plate264 may generate an electric field to interact with the magnetic field generated from the group of theelectromagnetic coils221 to enhance/maintain the helical motion of the mild reactive species such that sufficient momentum and energy is provided to keep the mild reactive species spinning down to theupper surface253 of thesubstrate250. The spin electrons may, thus, grind the structures with sufficient momentum all the way to bottoms of the structures formed on theupper surface253 of thesubstrate250.
• Atblock410, the LWR of thephotoresist layer514 may be adjusted, grinded, modified, controlled during the plasma-induced process. As depicted inFIG. 5, thecircular movement504 of the electrons may smoothly grind, collide, and polish away theuneven edges516 of thephotoresist layer514. The process may be continuously performed until a desired degree of roughness, e.g., straightness, (as shown by imaginary line510) ofphotoresist layer514 is achieved. By a good control of the electron momentum, the uneven surfaces and protrusions fromedges516 of thephotoresist layer514 may be gradually flattened out, thereby efficiently controlling the photoresist LWR within a desired minimum range. The electron momentum or neutral species concentration may be controlled by the power generated from the interaction between the magnetic field and the electric field and the gases supplied thereto. In one embodiment, by adjusting the power supplied to generate the plasma power and the magnetic field, different electron momentum or mobility may be obtained.
• In one embodiment, the distribution of the electrons and/or neutral species (e.g., electron beam source) may be controlled by using adifferent control plate264 with different materials or different characteristics. More embodiments of thecontrol plate264 with different materials or different characteristics will be further discussed below with reference toFIGS. 7-9.
• During processing, atblock410, several process parameters may be controlled to maintain the LWR of thephotoresist layer514 at a desired range. In one embodiment, the plasma power may be supplied to the processing chamber between about 50 watts and about 2000 watts. The magnetic field generated in the first group of coils ormagnetic segments208 in the processing chamber may be controlled between about 500 Gauss (G) and about 1000 G. A DC and/or AC power between about 100 watts and about 2000 watts may be used to generate a magnetic field in the processing chamber. The magnetic field generated in the group ofelectromagnetic coils221 in the processing chamber may be controlled between about 100 G and about 200 G. A DC and/or AC power may be applied to thecontrol plate264 between about 100 watts and about 2000 watts to generate a magnetic field in the processing chamber. The voltage between about 50 volts DC and about 200 volts DC is applied to theshield plate262 to filter the plasma as generated from theplasma generator202. The pressure of the processing chamber may be controlled at between about 0.5 milliTorr and about 500 milliTorr. A processing gas may be supplied into the processing chamber to assist modifying, trimming, and controlling the edge roughness of thephotoresist layer514. As the materials selected for thephotoresist layer514 are often organic materials, an oxygen containing gas may be selected as the processing gas to be supplied into the processing chamber to assist gridding and modifying the roughness and profile of thephotoresist layer514. Suitable examples of the oxygen containing gas include O₂, N₂O, NO₂,0₃, H₂O, CO, CO₂, and the like. Other types of processing gas may also be supplied into the processing chamber, simultaneously or individually, to assist in modifying the roughness of thephotoresist layer514. Suitable examples of the processing gas include N₂, NH₃, Cl₂or inert gas, such as Ar or He. The processing gas may be supplied into the processing chamber at a flow rate between about 10 sccm to about 500 sccm, for example, about between about 100 sccm to about 200 sccm. The process may be performed between about 30 seconds and about 200 seconds. In one particular embodiment, the O₂gas is supplied as the processing gas into the processing chamber to react with thephotoresist layer514 so as to trim and modify the LWR of thephotoresist layer514 disposed on thesubstrate250.
• The photoresistLWR control process400 may be continuously performed until a desired minimum roughness of thephotoresist layer514 is achieved. In one embodiment, line width roughness513 of thephotoresist layer514 may be controlled in a range less than about 3.0 nm, such as between about 1.0 nm and about 1.5 nm. The photoresistLWR control process400 may be terminated after reaching an endpoint signal indicating that a desired roughness of thephotoresist layer514 is achieved. Alternatively, the photoresistLWR control process400 may be terminated by a preset time mode. In one embodiment, the photoresistLWR control process400 may be performed for between about 100 seconds and between about 500 seconds.
• FIG. 6 depicts an exemplary embodiment of a cross sectional view of thephotoresist layer514 already having the photoresistLWR control process400 performed thereon. After the photoresistLWR control process400 is performed, a smooth edge surface is obtained. The roughness of thephotoresist layer514 is smoothed out and trimmed in a manner to minimize the edge roughness and smooth the edge morphology of thephotoresist layer514. The smooth edge surface formed in thephotoresist layer514 defines a sharp and well definedopening604 in the patternedphotoresist layer514 to expose theunderlying target material512 for etching, thereby etching a precise andstraight opening width606 to be formed as a mask layer. In one embodiment, thewidth606 of theopenings604 may be controlled between about 15 nm and about 35 nm.
• In one embodiment, theunderlying target material512 may be etched by an etching process performed in the same chamber used to perform the LWR control process, such as theprocessing chamber248 depicted inFIG. 2. In another embodiment, theunderlying target material512 may be etched by an etching process performed in any other different suitable etching chamber integrated in a cluster system where the LWR processing chamber may be incorporated thereto. In yet another embodiment, theunderlying target material512 may be etched by an etching process performed in any other different suitable etching chambers, including a stand-alone chamber separated from the LWR process chamber or separated from a cluster system where the LWR processing chamber may be incorporated thereto.
• In one embodiment, the gas mixture utilized to perform the LWR process is configured to be different from the gas mixture utilized to etch theunderlying target material512. In one embodiment, the gas mixture utilized to perform the LWR process includes an oxygen containing gas, such as O₂, and the gas mixture utilized to etch theunderlying target material512 includes a halogen containing gas, such as fluorine carbon gas, chlorine containing gas, bromide containing gas, fluorine containing gas, and the like.
• FIG. 7 depicts one embodiment of aplate700 having different zones in various arrangements. In the embodiment depicted inFIG. 7, theplate700 has different zones,702,704,706 arranged in concentric rings. Theplate700 may be used as one or both of a control plate or shield plate in the embodiment ofFIG. 2A. The concentric ring configuration, for example, may be useful in compensating for plasma non-uniformities (in a radial direction) that may arise from non-uniform gas flow patterns in the chamber.
• FIG. 8 depicts another embodiment of aplate800 having different zones in various arrangements. Theplate800 may be used as one or both of a control plate or shield plate in the embodiment ofFIG. 2A. In the embodiment depicted inFIG. 8, theplate800 is configured to have zones or segments based on the specific mask patterns in order to achieve different smoothing rate resulted on the substrate surface. Theplate800 is divided into two zones802,804, whose spatial configurations correspond to or correlate with respective regions on a mask having different pattern densities. For example, if zone802 corresponds to a region on the mask requiring a relatively higher smoothing rate than the rest of the mask, then zone802 may be provided with a larger diameter ofapertures806. Alternatively, zones802,804 may be made of materials with different dielectric contacts and/or different potential biases, so as to provide different electron (and/or neutral species) spinning or rotating rates.
• FIG. 9 depicts yet another embodiment of aplate900 having different zones in various arrangements. Theplate900 may be used as one or both of a control plate or shield plate in the embodiment ofFIG. 2A. In the embodiment depicted inFIG. 9, theplate900 is configured to have a plurality of zones orsegments902,904,906,908. At least two zones are made of different materials compatible with process chemistries. At least two zones may be independently biased to maintain a potential difference between the biased zones. The use of materials having different dielectric constants or different potential biases allows users to tune the plasma characteristics or different rotating speeds and momentums. Additionally, the sizes ofapertures910,912,914,916 located indifferent zones902,904,906,908 of theplate900 may be arranged in any combinations or configurations.
• Thus, the present invention provides methods and an apparatus for controlling and modifying LWR of a photoresist layer with enhanced electron spinning momentum. The method and apparatus can advantageously control, modify and trim the profile, line width roughness and dimension of the photoresist layer disposed on a substrate after a light exposure process, thereby providing accurate critical dimension control of an opening in the photoresist layer so the subsequent etching process may accurately transfer critical dimensions to the underlying layer being etched through the opening.
• While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (20)

1. An apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate, comprising:

a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region;

a support pedestal disposed in the interior processing region of the processing chamber; and

a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

2. The apparatus ofclaim 1, further comprising:

a shield plate disposed in the processing chamber operable to filter ions from the plasma and pass electrons.

3. The apparatus ofclaim 2, further comprising:

a control plate disposed in the processing region between the shield plate and the support pedestal.

4. The apparatus ofclaim 3, further comprising:

a power source coupled to the control plate.

5. The apparatus ofclaim 3, wherein the control plate comprises a plurality of zones formed therein with at least two zones comprising different materials or different potential biases.

6. The apparatus ofclaim 2, further comprising:

a power source coupled to the shield plate.

7. The apparatus ofclaim 2, wherein the shield plate comprises a plurality of zones formed therein with at least two zones comprising different materials or different potential biases.

8. The apparatus ofclaim 3, wherein the control plate is attached to the shield plate.

9. The apparatus ofclaim 3, wherein the control plate has a plurality of apertures formed therein.

10. The apparatus ofclaim 1, wherein the shield plate has a plurality of apertures formed therein.

11. The apparatus ofclaim 1 further comprising:

a magnet or a group of one or more electromagnetic coils disposed around an outer circumference of the chamber body adjacent to the interior processing region of the chamber body.

12. A method for controlling line width roughness of a photoresist layer disposed on a substrate comprising:

providing a substrate having a patterned photoresist layer disposed thereon into a processing chamber;

supplying a gas mixture into the processing chamber;

generating a plasma in the gas mixture having electrons moving in a circular mode from the gas mixture;

generating a magnetic field to enhance the electrons in the plasma moving in the circular mode to a substrate surface; and

trimming an edge profile of the patterned photoresist layer disposed on the substrate surface with the enhanced electrons.

13. The method ofclaim 12, wherein generating the plasma further comprises:

filtering ions from the plasma.

14. The method ofclaim 13, further comprising:

directing the filtered electrons through the magnetic field.

15. The method ofclaim 12, wherein generating the magnetic field further comprises:

applying a DC or AC power to one or more electromagnetic coils disposed around the outer circumference of the processing chamber.

16. The method ofclaim 12, wherein the gas mixture comprises an oxygen containing gas.

17. A method for controlling line width roughness of a photoresist layer disposed on a substrate comprising:

supplying a gas mixture into a processing chamber having a substrate disposed therein, wherein the substrate has a patterned photoresist layer disposed thereon;

generating a plasma in the processing chamber from the gas mixture supplied in the processing chamber;

applying a voltage to a shield plate disposed in the processing chamber to filter ions from the plasma and leave mild reactive species;

directing the mild reactive species through a control plate;

applying a DC or AC power to a group of one or more electromagnetic coils disposed around an outer circumference of the processing chamber to generate a magnetic field;

enhancing movement of the mild reactive species in circular mode by passing through the filtered plasma in the magnetic field; and

trimming an edge profile of the patterned photoresist layer using the mild reactive species.

18. The method ofclaim 17, wherein directing the filter plasma further comprises:

applying a power to the control plate.

19. The method ofclaim 17, wherein supplying the gas mixture further comprises:

supplying an oxygen containing gas into the processing chamber.

20. The method ofclaim 17, wherein the mild reactive species include neutral radicals and electrons.

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