US20120218624A1 - High-power white leds - Google Patents

Abstract

A light emitting apparatus has a radiation source for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation emitted by the radiation source and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material at least partially surrounds the radiation source. The optic device is configured to extract at least some of the back transferred radiation. A sealant substantially seals a space between the radiation source and the optic device.

Description

CROSS REFERENCE TO RELATED APPLICATION
• This application is a Continuation Application of U.S. patent application Ser. No. 12/987,315, filed Jan. 10, 2011, which is a Divisional Application of U.S. patent application Ser. No. 11/644,815 filed Dec. 22, 2006 which claims the benefit of priority to U.S. Provisional Application Ser. No. 60/859,633 filed Nov. 17, 2006, the contents of which is incorporated by reference herein.
BACKGROUND OF THE INVENTION
• Solid state light emitting devices, including solid state lamps having light emitting diodes (LEDs) and resonant cavity LEDs (RCLEDs) are extremely useful, because they potentially offer lower fabrication costs and long term durability benefits over conventional incandescent and fluorescent lamps. Due to their long operation (burn) time and low power consumption, solid state light emitting devices frequently provide a functional cost benefit, even when their initial cost is greater than that of conventional lamps. Because large scale semiconductor manufacturing techniques may be used, many solid state lamps may be produced at extremely low cost.
• In addition to applications such as indicator lights on home and consumer appliances, audio visual equipment, telecommunication devices and automotive instrument markings, LEDs have found considerable application in indoor and outdoor informational displays.
• With the development of efficient LEDs that emit short wavelength (e.g., blue or ultraviolet (UV)) radiation, it has become feasible to produce LEDs that generate white light through down conversion (i.e., phosphor conversion) of a portion of the primary emission of the LED to longer wavelengths. Conversion of primary emissions of the LED to longer wavelengths is commonly referred to as down-conversion of the primary emission. An unconverted portion of the primary emission combines with the light of longer wavelength to produce white light.
• Phosphor conversion of a portion of the primary emission of the LED is attained by placing a phosphor layer in an epoxy that is used to fill the reflector cup which houses the LED within the LED lamp. The phosphor is in the form of a powder that is mixed into the epoxy prior to curing the epoxy. The uncured epoxy slurry containing the phosphor powder is then deposited onto the LED and subsequently cured.
• The phosphor particles within the cured epoxy generally are randomly oriented and interspersed throughout the epoxy. A portion of the primary light emitted by the LED passes through the epoxy without impinging on the phosphor particles, and another portion of the primary radiation emitted by the LED chip impinges on the phosphor particles, causing the phosphor particles to emit longer wavelength radiation. The combination of the primary short wavelength radiation and the phosphor-emitted radiation produces white light.
• Current state of the art phosphor-converted LED (pc-LED) technology is inefficient in the visible spectrum. The light output for a single pc-white LED is below that of typical household incandescent lamps, which are approximately 10 percent efficient in the visible spectrum. An LED device having a light output that is comparable to a typical incandescent lamp's power density necessitates a larger LED chip or a design having multiple LED chips. Moreover, a form of direct energy absorbing cooling must be incorporated to handle the temperature rise in the LED device itself. More particularly, the LED device becomes less efficient when heated to a temperature greater than 100° C., resulting in a declining return in the visible spectrum. The intrinsic phosphor conversion efficiency, for some phosphors, drops dramatically as the temperature increases above approximately 90° C. threshold.
• A conventional LED chip is encapsulated by an epoxy that may be referred to as a dome or an epoxy dome. Light from the encapsulated LED passes through the encapsulating substance of the dome before passing through a transmission medium, such as air. The encapsulating substance of the dome performs at least two functions. First, allows for beam control; i.e., it helps to control the direction of light rays passing from the LED chip to a destination. Second, it increases the efficiency of light transmission between the LED and air. The encapsulating substance of the dome performs these two functions at least in part because the value of the refractive index of the encapsulating medium is between the refractive index of the LED chip and the refractive index of air. In a conventional LED chip, the height of the dome may be in the range of 2 mm to 10 mm.
SUMMARY OF THE INVENTION
• An embodiment of this invention is a light emitting apparatus having a radiation source for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation emitted by the radiation source and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material at least partially surrounds the radiation source. The optic device is configured to extract at least some of the back transferred radiation. A sealant substantially seals a space between the radiation source and the optic device.
• Another embodiment of the invention is a light emitting apparatus having a plurality of radiation sources for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation from at least one of the plurality of radiation sources and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material at least partially surrounds the plurality of radiation sources and is configured to extract at least some of the radiation back transferred from the down conversion material. A sealant substantially seals a space between the plurality of radiation sources and the optic device.
• Still another embodiment of the invention is a light emitting apparatus having a plurality of radiation sources for emitting short wavelength radiation. A plurality of down conversion material layers respectively receives and down converts at least some of the short wavelength radiation emitted by respective ones of the radiation sources and back transfers respective portions of the respectively received and down converted radiation. There are a plurality of optic devices. Respective optic devices are adjacent respective down conversion material layers. Respective ones of the optic devices at least partially surround respective ones of the radiation sources. Respective optic devices are each configured to extract at least some of the radiation back transferred from respective down conversion material layers or radiation from respective radiation sources. A plurality of sealants substantially seal respective spaces between respective radiation sources and respective optic devices.
• Another embodiment of the invention is a method of manufacturing a light emitting apparatus. A down conversion material is placed on a first portion of an optic device that is configured to extract at least one of radiation back transferred from the down conversion material or radiation emitted from a short wavelength radiation source. An aperture is formed in a second portion of the optic device. A sealant is placed on a surface of the second portion of the optic device. The radiation source is inserted into the aperture wherein at least one surface of the radiation source contacts the sealant. The optic device is placed on a support.
• Another embodiment of the invention is another method of manufacturing a light emitting apparatus. A down conversion material is placed on a first portion of an optic device that is configured to extract at least one of radiation back transferred from the down conversion material or radiation emitted from a short wavelength radiation source. An aperture is formed in a second portion of the optic device. A sealant is placed on a surface of the second portion of the optic device inside the aperture. The radiation source is placed on a support. The optic device is placed onto the support and over the radiation source so that the optic device at least partially surrounds the radiation source.
• Yet another embodiment of the invention is a light emitting apparatus having a radiation source for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation emitted by the radiation source and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material and the radiation source is configured to extract from the optic device at least one of back-transferred radiation or radiation from the radiation source. A first reflective surface at least partially surrounds the optic device for reflecting at least some of the light extracted from the optic device. A second reflective surface at least partially surrounds the radiation source for reflecting at least some of the radiation emitted by the radiation source.
• Still another embodiment of the invention is a light emitting apparatus having a plurality of radiation sources for emitting short wavelength radiation. A down conversion material receives and down converts at least some of the short wavelength radiation from at least one of the plurality of radiation sources and back transfers a portion of the received and down converted radiation. An optic device adjacent the down conversion material at least partially surrounds the plurality of radiation sources and is configured to extract at least some of the radiation that is back transferred from the down conversion material. A sealant substantially seals a space between the plurality of radiation sources and the optic device.
• Another embodiment of the invention is another method of manufacturing a light emitting apparatus having a first reflective cup and a second reflective cup. A down conversion material is placed on a first portion of an optic device that is configured to extract one of radiation back transferred from the down conversion material or radiation emitted from a short wavelength radiation source. A first surface of the radiation source is placed on a first surface of a well that is formed by the second reflective cup. A first sealant is placed between at least a second surface of the radiation source and a second surface of the well. A second sealant is placed on at least a third surface of the radiation source. The optic device is placed within the first reflective cup and in contact with the second sealant.
BRIEF DESCRIPTION OF THE DRAWINGS
• It will be understood that the figures are not drawn to scale and that the relative size of certain features may be exaggerated for ease of illustration.
• FIG. 1 is a diagram illustrating the exemplary radiation rays that may result when an exemplary radiation ray from a short-wavelength radiation source such as an LED chip impinges on a layer of down conversion material;
• FIG. 2 is a partial cross-section view of an optic device making use of a down conversion material that is remote from a short wavelength radiation source;
• FIG. 3 is a partial cross-section view of a light emitting apparatus according to an exemplary embodiment of the present invention;
• FIG. 4 is a partial cross-section view of the optic device illustrated inFIG. 3 having an exemplary embodiment of an aperture;
• FIG. 5 is a partial cross-section view of the optic device illustrated inFIG. 3 having an alternative embodiment of an aperture;
• FIG. 6 is a partial cross-section of an embodiment of the invention having an exemplary embodiment of a lens adjacent the down conversion material;
• FIG. 7 is a partial cross-section of an alternative embodiment of the invention that does not have a lens adjacent the down conversion material;
• FIG. 8 is a partial cross-section of another alternative embodiment of the invention having an alternative embodiment of a lens adjacent the down conversion material;
• FIG. 9 is a partial cross-section of yet another alternative embodiment of the invention having yet another alternative embodiment of a lens adjacent the down conversion material;
• FIG. 10 is another embodiment of the invention wherein a plurality of short wavelength radiation sources are used;
• FIG. 11 is another embodiment of the invention having a plurality of short wavelength radiation sources;
• FIG. 12 is yet another embodiment of the invention having a plurality of short wavelength radiation sources;
• FIG. 13 is still another embodiment of the invention having a plurality of reflective surfaces adjacent the radiation source and the optic device;
• FIG. 14 illustrates an exemplary embodiment of a method that may be used to manufacture any of the embodiments of the invention described in connection withFIGS. 3-12;
• FIG. 15 illustrates another embodiment of a method of manufacturing any of the embodiments of the invention described in connection withFIGS. 3-12;
• FIG. 16 illustrates an exemplary embodiment of a method that may be used to manufacture the embodiment of the invention described in connection withFIG. 13;
• FIG. 17 is a partial cross-section view of an optic device in accordance with still another embodiment of the invention;
• FIG. 18 is another partial cross-section view of the embodiment illustrated inFIG. 17;
• FIG. 19 is a partial cross-section view of still another embodiment of the invention;
• FIG. 20 is another partial cross-section view of the embodiment illustrated inFIG. 19;
• FIG. 21 illustrates an exemplary embodiment of a method of manufacturing either of the embodiments illustrated inFIGS. 17-20; and
• FIG. 22 illustrates another embodiment of a method of manufacturing either of the embodiments illustrated inFIGS. 17-20.
DETAILED DESCRIPTION OF THE INVENTION
• FIG. 1 is a diagram illustrating the exemplary radiation rays that may result when anexemplary radiation ray2000 from a short-wavelength radiation source such as anLED chip2002 impinges on a layer ofdown conversion material2004. The impingement of exemplary short-wavelength radiation2000 from a short-wavelength source such as anLED chip2002 onto a downconversion material layer2004 may produce radiation with four components: back transferred short-wavelength radiation2006 reflected from the downconversion material layer2004; forward transferred short-wavelength radiation2008 transmitted through the downconversion material layer2004; forward transferred down-convertedradiation2010 transmitted through thedown conversion material2004; and back transferred down-convertedradiation2012 reflected from thedown conversion material2004. The four components may combine to produce white light.
• Two of the fourcomponents2010 and2012 may each be comprised of two sub-components. One of the sub-components of forward transferred down-converted radiation may be emittedradiation2014; i.e., down-converted radiation having a longer wavelength than the short-wavelength radiation that impinges onto the downconversion material layer2004. The emittedradiation sub-component2014 of forward transferred down-converted radiation may be produced by short-wavelength radiation2000 impinging on particles of thedown conversion material2004 as it is transmitted through thedown conversion material2004. The second sub-component of forward transferred down-converted radiation may be forward scattered emittedradiation2016; i.e., other down-converted radiation having a longer wavelength than the short-wavelength radiation2000 that impinges onto the downconversion material layer2004. The forward scattered emittedradiation sub-component2016 of forward transferred down-convertedradiation2010 may be produced by short-wavelength radiation2000 impinging on particles of thedown conversion material2004 and that also bounces back and forth on the particles of thedown conversion material2004 before being transmitted through thedown conversion material2004.
• One of the sub-components of back transferred down-convertedradiation2012 may be emittedradiation2020; i.e., down-converted radiation having a longer wavelength than the short-wavelength radiation2000 that impinges onto the downconversion material layer2004. The emittedradiation sub-component2018 of back transferred down-convertedradiation2012 may be produced by short-wavelength radiation2000 impinging on particles of thedown conversion material2004 as it is reflected from thedown conversion material2004. The second sub-component of back transferred down-convertedradiation2012 may be back scattered emittedradiation2020; i.e., other down-converted radiation having a longer wavelength than the short-wavelength radiation2000 that impinges onto the downconversion material layer2004. The back scattered emittedradiation sub-component2020 of back transferred down-convertedradiation2012 may be produced by short-wavelength radiation2000 impinging on particles of thedown conversion material2004 and that also bounces back and forth on the particles ofdown conversion material2004 before being reflected from thedown conversion material2004.
• White light may be produced by the combinations of the various components discussed above. In the forward transferred direction (i.e., forradiation2008,2014,2016,2010 that is transmitted through the down conversion material layer), white light may be produced by the combination of forward transferred short-wavelength radiation2008 with either or both of the sub-components2014,2016 of the forward transferred down-convertedradiation2010. That is, white light may be produced in the forward transferred direction by the combination of forward transferred short-wavelength light2008 with transmitted emittedradiation2014 and/or with transmitted forward scattered emittedradiation2016.
• In the back transferred direction (i.e., forradiation2006,2018,2020,2012 that is reflected from the down conversion material layer), white light may be produced by the combination of back transferred short-wavelength radiation2006 with either or both of the sub-components2018,2020 of the back transferred down-convertedradiation2012. That is, white light may be produced in the back transferred direction by the combination of back transferred short-wavelength light2006 with reflected emittedradiation2018 and/or with reflected back scattered emittedradiation2020.
• The wavelength of the forward transferred short-wavelength radiation2008 may be about the same as the wavelength of theradiation2000 emitted by a radiation source such as anLED chip2002. The wavelength of the back transferredshort wavelength radiation2006 may be about the same as the wavelength of theradiation2000 emitted by theradiation source2002. The wavelength of the forward transferred short-wavelength radiation2008 may be about the same as the wavelength of the back transferred short-wavelength radiation2006. In an exemplary embodiment, theradiation source2002 may emit radiation exhibiting a wavelength that is less than 550 nm, more particularly in a range of about 200 nm to less than 550 nm. Accordingly, the wavelength of the forward transferred short-wavelength radiation2008 and the wavelength of the back transferred short-wavelength radiation2006 may be less than 550 nm, more particularly in a range of about 200 nm to less than 550 nm.
• The wavelength of the forward transferred down-converted radiation2010 (including its sub-components2014,2016) and the wavelength of the back transferred down-converted radiation2012 (including its sub-components2018,2020) may be any wavelength that is longer that the excitation spectrum of thedown conversion material2004. In an exemplary embodiment, the excitation spectrum of thedown conversion material2004 may be in the range of about 300 nm to about 550 nm. In alternative embodiments, other down conversion materials may be used that have an excitation spectrum other than in the range of about 300 nm to about 550 nm. The excitation spectrum of thedown conversion material2004 should produce radiation having a wavelength that is longer than the wavelength of the radiation produced by the short-wavelength emittingradiation source2002. In an exemplary embodiment, thedown conversion material2004 may produce radiation in the range of from about 490 nm to about 750 nm.
• The inventors have discovered that the performance of phosphor converted LEDs is negatively affected when placing the down-conversion phosphor close to the LED die. Poor performance is mainly due to the fact that the phosphor medium surrounding the die behaves like an isotropic emitter, and some portion of the back transferred radiation towards the die circulates between the phosphor layer, the die, and the reflector cup. As a result, the back transferred radiation increases the junction temperature, thus reducing system efficacy and increasing the yellowing of the encapsulant. All of these factors reduce the light output over time.
• The literature shows that 60 percent of the light impinging on the phosphor layer is back transferred, contributing to the described effects (Yamada, et al., 2003). Lab measurements of eight YAG:Ce phosphor plates proved that nearly 60% of the radiant energy is transferred back in the direction of the blue LED source. The absolute magnitude of the radiant energy reflected depends, among other factors, on the density of the phosphor coating.
• Such effects are expected to be of a higher magnitude in RCLEDs, because their light output is much more collimated. Consequently, the packaging attempts to capture the transmitted, emitted, and reflected components to improve system efficiency. Additionally, the inventors have created packaging that allows the phosphor layer to be moved away from the die, preventing radiation feedback into the LED and RCLED. As a result, the packaging increases the efficiency of the device by allowing more of the radiation reflected off and emitted by the phosphor layer to exit the device. At the same time, radiation from the RCLED impinges on the phosphor layer uniformly to obtain a uniform white light source. In addition, the life of the LED and RCLED is improved.
• In traditional phosphor-converted white LEDs, where the phosphor is placed adjacent the die, more than 65% of the light generated by the phosphor is back-scattered and lost within the LED package. Based on these findings, a technique referred to as Scattered Photon Extraction™ (SPE™) has been developed. An aspect of the technique has been disclosed in pending International Application No. PCT/US2005/015736 filed on May 5, 2005 and published at WO 2005/107420 A2 on Nov. 17, 2005.
• To increase the light output from a phosphor-converted white LED (pc-LED) and to achieve higher luminous efficacy, the down-conversion material (e.g., phosphor or quantum dots) is removed to a remote location and a properly tailored optic device is placed between the LED chip and the down-conversion material layer. Then, the back transferred light can be extracted to increase the overall light output and efficacy. This technique significantly increases the overall light output and luminous efficacy of a pc-white LED by extracting the phosphor emitted and back scattered reflected radiation, and the reflected short-wavelength radiation that otherwise would be lost. The invention described in this specification may achieve a 1500-lumen package at 150 lm/W, for example, using an LED chip array. In an exemplary embodiment, the LED chip array may be nitride-based. In alternative embodiment, the LED chip array may be AlInN-based or any other short wavelength emitter.
• FIG. 2 illustrates a device using the SPE™ technique. It illustrates a high efficiency light source that may use one or more solid state emitters and down conversion material. It illustrates an optic device making use of a down conversion material that is remote from a short wavelength radiation source. The down conversion material may be a phosphor or quantum dots. As shown,device200 may include aradiation source202 for emitting short wavelength radiation.Radiation source202 is separated fromphosphor layer204 byoptic device250 which may be made of a substantially transparent medium that may be substantially light transmissive. The substantially transparent medium may be, for example, air, glass or acrylic.Optic device250, as well as all of the embodiments disclosed in the application, may be cylindrical in shape or may have another curved or linear shape. For purposes of illustration,optic device250 is shown as havingwalls252 and254, which may be substantially transparent and substantially light transmissive walls.Phosphor layer204 may be placed adjacent to or on aportion206 ofoptic device250.
• Phosphor orquantum dot layer204 may include additional scattering particles (such as micro spheres) to improve mixing light of different wavelengths. Also, the phosphor orquantum dot layer204 may be of a single phosphor (or quantum dot) or multiple phosphors (or quantum dots) to produce different colored down-converted radiation that may be in several different spectral regions. Alternatively, a layer with scattering particles only may be placed above, or below, or above and below the downconversion material layer204 to improve color mixing.
• Theportion206 ofoptic device250 upon whichphosphor layer204 may be deposited may be an end ofoptic device250.Radiation source202 may be located at another portion ofoptic device250. For example,radiation source202 may be located at anotherend208 ofoptic device250.Optic device250 may be placed upon abase256.
• Shortwavelength radiation source202 may be located betweenwalls252 and254. Both the shortwavelength radiation source202 and theoptic device250 may be positioned on thebase256.
• Exemplary radiation rays214 may comprise radiation transmitted throughphosphor layer204 including forward transferred short-wavelength radiation transmitted through thephosphor layer204 and forward down-converted radiation transmitted through thephosphor layer204.
• Exemplary radiation rays215 may comprise back transferred short-wavelength radiation and back transferred down-converted reflected radiation that may be emitted and/or scattered back byphosphor layer204. Exemplary radiation rays216 may comprise radiation scattered back byphosphor layer204. Exemplary radiation rays216 may comprise the radiation rays215 that may be transmitted through the substantially transparent, substantially lighttransmissive walls252,254. Althoughexemplary arrows215 show back transferred radiation being transferred around the middle ofside walls252 and254, it will be understood that back transferred radiation may be transferred throughside walls252 and254 at multiple locations along theside walls252 and254. The transfer of radiation outside theoptic device250 may be referred to as extraction of light. Accordingly, bothradiation rays215 andradiation rays216 may include short wavelength radiation reflected from thephosphor layer204 and down-converted reflected radiation that may be emitted and/or scattered from thephosphor layer204. Some or all ofradiation rays215 and/216 may be seen as visible light.
• The transfer (extraction) of radiation throughside walls252 and254 may occur becauseoptic device250 may be configured and designed with substantially transparent, substantially lighttransmissive walls252 and254 to extract radiation from insideoptic device250 tooutside optic device250. In addition, various widths ofoptic device250 may be varied in order to extract a desired amount of radiation out of theoptic device250. The widths that may be varied are the width at theend206 and the width at theend208. Similarly, widths between ends206 and208 may be varied. The widths between ends206 and208 may result inwalls252 and254 being substantially straight, curved, or having both straight and curved portions.
• The dimensions of the features ofoptic device250 discussed above may be varied depending upon the application to which theoptic device250 may be used. The dimensions of the features ofoptic device250 may be varied, and set, by using the principles of ray tracing and the principles of total internal reflection (TIR). When principles of TIR are applied, reflectivity of radiation off of one or both ofwalls252 and254 may exceed 99.9%. The principles of TIR may be applied to all of the embodiments disclosed in this application.
• The dimensions ofoptic device250 may be set in accordance with the use to which the optic device may be put. For example, the dimensions of the optic device may be set in order to maximize the amount of radiation fromradiation source202 that enters intooptic device250. Alternatively, the dimensions ofoptic device250 may be set in order to maximize the amount of radiation fromradiation source202 that impinges upondown conversion material204. Also alternatively, the dimensions ofoptic device250 may be set in order to maximize the amount of radiation that is back transferred from downconversion material204. Also alternatively, the dimensions ofoptic device250 may be set in order to maximize the amount of radiation that is extracted throughwalls252 and254. Also alternatively, the dimensions ofoptic device250 may be set in order to provide a device that, to the extent possible, simultaneously maximizes each of the radiation features discussed above: the amount of radiation entering intooptic device250; the amount of radiation that impinges upondown conversion material204; the amount of radiation that is back transferred from downconversion material204; and the amount of radiation that is extracted throughwalls252 and254. In addition, the dimensions ofoptic device250 may be set so that any or all of the features discussed above are not maximized. The principles of ray tracing and the principles of TIR may be used in order to implement any of these alternatives.
• Some of the dimensions that may be varied are the diameter ofend206 of the optic device; the diameter ofend208 of optic device; the angle ofwalls252 and/or254 relative to end208; the shape ofwalls252 and/or254. For example,walls252 and/or254 may be straight, curved, or combinations of straight and curved. Aheight260 of theoptic device250 may be less than 30 mm.
• The refractive index ofoptic device250 may be in a range from about 1.4 to about 1.7.Radiation source202 may have a refractive index in the range of about 1.7 to about 2.6.Radiation source202 may be encapsulated by a material such aradiation transmissive epoxy220. The encapsulating material may be referred to as adome220. The height ofdome220 may be about 2 mm to about 10 mm.Dome220 may be used for beam control and to improve the efficiency of the radiation source, such as when theradiation source202 is an LED. In order to provide these advantages, the refractive index of thedome220 may be in range of about 1.4 to about 1.7. The refractive index ofdome220 may be selected to be between the refractive index ofradiation source202 and the refractive index ofoptic device250 so that thedome220 may provide a transition for radiation between the output ofradiation source202 andoptic device250.
• An aperture is provided inend208 ofoptic device250. The aperture may be sized and shaped to receive thedome220 along with the encapsulatedradiation source202. Accordingly, the height of the aperture may be about 2 mm to about 15 mm in order to fully receivedome220.
• FIG. 3 is a partial cross-section view of a light emitting apparatus according to an exemplary embodiment of the present invention.FIG. 3 shows a shortwavelength radiation source302 that may be a light emitting diode (LED), a laser diode (LD), or a resonant cavity light emitting diode (RCLED).Radiation emitting source302 is not encapsulated by a dome.Radiation emitting source302 may either be manufactured without a conventional dome or it may be manufactured with a dome, which may be removed as needed.Radiation emitting source302 may emit short wavelength radiation. One side ofradiation source302 may be positioned on aheat sink304 which may transfer heat away fromradiation source302. Aninside surface306 ofheat sink304 may be a reflective surface to form a reflective cup. In an exemplary embodiment, the shape ofreflective surface306 may be a parabola for illustration purposes, but it may take any geometric shape such as a concave shape, an elliptical shape, or a flat shape. In an exemplary embodiment, thelength370 ofheat sink304 may be about 5 mm.Reflective surface306 may direct some of the light extracted from optic device towarddown conversion material310 and may direct some of the extracted light toward alens340 without impinging upon downconversion material310.
• Anoptic device308 may be positioned on theheat sink304 and over theradiation source302.Optic device308 may make use of adown conversion material310 that is placed on aportion316 of optic device that is remote fromradiation source302. The downconversion material310 may be a phosphor or quantum dots.Radiation source302 is separated fromphosphor layer310 byoptic device308 which may be made of a substantially transparent medium that may be substantially light transmissive. The substantially transparent medium may be, for example, air, glass or acrylic.Optic device308 may have substantially transparent and substantially lighttransmissive walls312 and314.
• Phosphor orquantum dot layer310 may include additional scattering particles (such as micro spheres) to improve mixing light of different wavelengths. Also, the phosphor orquantum dot layer310 may be of a single phosphor (or quantum dot) or multiple phosphors (or quantum dots) to produce different colored down-converted radiation that may be in several different spectral regions. Alternatively, a layer with scattering particles only may be placed above, or below, or above and below the downconversion material layer310 to improve color mixing.
• Theportion316 ofoptic device308 upon whichphosphor layer310 may be deposited may be an end ofoptic device308.Radiation source302 may be located at another portion ofoptic device308. For example,radiation source302 may be located at anotherend318 ofoptic device308. As indicated,optic device308 may be placed upon a base which may beheat sink304.
• Shortwavelength radiation source302 may be located betweenwalls312 and314 ofoptic device308. Both the shortwavelength radiation source302 and theoptic device308 may be positioned on theheat sink304.
• The operation of, and the interrelationship between,radiation source302,optic device308, and downconversion material310 may be the same as the operation and interrelationship between corresponding elements described and illustrated inFIGS. 1 and 2. Short wavelength radiation emitted byradiation source302 may result in radiation transmitted throughphosphor layer310 including forward transferred short-wavelength radiation transmitted through thephosphor layer310 and forward down-converted radiation transmitted through thephosphor layer310; and back transferred short-wavelength radiation and back transferred down-converted reflected radiation that may be emitted and/or scattered back byphosphor layer310. It will be understood that back transferred radiation may be transferred throughside walls312 and314 at multiple locations along theside walls312 and314. The transfer of radiation outside theoptic device308 may be referred to as extraction of light. Accordingly, radiation rays that may be extracted fromoptic device308 may include short wavelength radiation reflected from thephosphor layer310 and down-converted reflected radiation that may be emitted and/or scattered from thephosphor layer310. Some short wavelength radiation emitted from the top and the sides of theradiation source302 may leaveoptic device308 without impinging upon downconversion material310. Some or all of the extracted short wavelength reflected radiation and the extracted down converted reflected radiation may be seen as visible light.
• The transfer (extraction) of radiation throughside walls312 and314 may occur becauseoptic device308 may be configured and designed with substantially transparent, substantially lighttransmissive walls312 and314 to extract radiation from insideoptic device308 tooutside optic device308. In addition, various widths ofoptic device308 may be varied in order to extract a desired amount of radiation out of theoptic device308. The widths that may be varied are the width at theend316 and the width at theend318. Similarly, widths between ends316 and318 may be varied. Variations in the widths ofwalls312 and314 betweenends316 and318 may be created by varying shapes ofwalls312 and314.Walls312 and314 may be substantially straight, curved, or have both straight and curved portions.
• The dimensions of the features ofoptic device308 discussed above may be varied depending upon the application to which theoptic device308 may be used. The dimensions of the features ofoptic device308 may be varied, and set, by using the principles of ray tracing and the principles of total internal reflection (TIR). When principles of TIR are applied, reflectivity of radiation off of one or both ofwalls312 and314 may exceed 99.9%. The principles of TIR may be applied to all of the embodiments disclosed in this application.
• The dimensions ofoptic device308 along with characteristics of downconversion material310 may be set or adjusted in accordance with the use to which the optic device may be put. For example, the dimensions of the optic device may be set in order to maximize the amount of radiation fromradiation source302 that enters intooptic device308. Alternatively, the dimensions ofoptic device308 may be set in order to maximize the amount of radiation fromradiation source302 that impinges upondown conversion material310. Also alternatively, the dimensions ofoptic device302 may be set in order to maximize the amount of radiation that is back transferred from downconversion material310. Also alternatively, the dimensions ofoptic device308 may be set in order to maximize the amount of radiation that is extracted throughwalls312 and314.
• It will also be understood that dimensions of other embodiments ofoptic device308 and characteristics of downconversion material310 may be set or adjusted to produce radiation features that are not maximized. In these other embodiments, one or more of the amounts of radiation entering intooptic device308; impinging upon downconversion material310; back transferred from downconversion material310; and extracted throughwalls312 and314 may be adjusted to a one or more of a variety of levels that may be less than their respective maximum levels, depending upon the use to which the optic device is put. The dimensions ofoptic device308 may also be varied depending upon relative cost needs versus the needed efficiency of light extraction for a particular use of the optic device.
• The principles of ray tracing and the principles of TIR may be used in order to implement any of these alternatives.
• Some of the dimensions that may be varied are the diameter ofend316 of the optic device; the diameter ofend318 of optic device; the angle ofwalls312 and/or314 relative to end318; the shape ofwalls312 and/or314. For example,walls312 and/or314 may be straight, curved, or combinations of straight and curved. In an exemplary embodiment, aheight360 of theoptic device308 may be about 3 mm.
• FIG. 4 is a partial cross-section view of the optic device illustrated inFIG. 3 having an exemplary embodiment of an aperture. More specifically,FIG. 4 is a partial cross-section view ofoptic device308 having an exemplary embodiment of anaperture320.FIG. 4 showsoptic device308 and downconversion material310 on anend316 ofoptic device308.FIG. 4 shows theaperture320 inend318 ofoptic device308. Theaperture320 may be sized and shaped to receive theradiation source302 so thatoptic device308 at least partially surroundsradiation source302 because a substantial amount ofradiation source302 is within theaperture320. As shown in the exemplary embodiment illustrated inFIGS. 3 and 4, whenradiation source302 is withinaperture320, substantially all of theradiation source302 may be surrounded byoptic device308. The only portion ofradiation source302 that may not be surrounded byoptic device308 is the portion that rests onheat sink304. When theradiation source302 is positioned within theaperture320 ofoptic device308 as shown inFIGS. 3 and 4, it may be said thatradiation source302 is fully immersed within theoptic device308. In an exemplary embodiment, the dimensions ofradiation source302 may be about 1 mm by about 1 mm by about 0.3 mm and the diameter ofaperture320 may be about 2 mm. By using a radiation source without a dome, theheight360 of theoptic device308 may be smaller than, for example, theheight260 of theoptic device250 shown inFIG. 2.
• It will be understood that the aperture in the optic device may have a variety of shapes. As shown inFIG. 4, for example,aperture320 may have a curved shape.FIG. 5 is a partial cross-section view of the optic device illustrated inFIG. 3 having an alternative embodiment of an aperture. In the alternative embodiment shown inFIG. 5, anaperture322 may be in a shape that more nearly approximates the shape of theradiation source302. For example, as shown inFIG. 5, the shape ofaperture322 ofoptic device308 may be a trapezoid. In an exemplary embodiment, the dimensions ofaperture322 may be equal to or somewhat larger than the diameter of theradiation source302. As indicated byarrow50 inFIG. 5,optic device308 with trapezoid shapedaperture322 may be placed on top of, and substantially surround,radiation source302. When an aperture such asaperture322 is used, and whenoptic device308 is placed on top ofradiation source302,FIG. 3 may illustrate theradiation source308 withinaperture322 ofoptic device308. As shown inFIGS. 3 and 5, the aperture inoptic device308 may be shaped to closely match the shape of theradiation source302. Regardless of which aperture shaped is used, theradiation source302 may be fully immersed within theoptic device308 and may be substantially surrounded byoptic device308, except for the side ofradiation source302 that may rest onheat sink304 or other supporting base if a heat sink is not used, in an alternative embodiment.
• The refractive index ofoptic device308 may be in a range from about 1.4 to about 1.7.Radiation source302 may have a refractive index in the range of about 1.7 to about 2.6. Referring toFIG. 4, there may be air spaces such asspaces324,326, and328 betweenradiation source302 the inside ofoptic device308. Referring toFIG. 4, there may also be an air space (not shown) betweencorner330 ofradiation source302 and the adjacent point of theoptic device308 insideaperture320 and betweencorner332 ofradiation source302 and the adjacent point of theoptic device308 insideaperture320. Referring toFIGS. 3 and 5, there may also be air spaces between the sides ofradiation source302 and the inside ofoptic device308 withinaperture322. There may also be air spaces betweenradiation source302 and the inside ofoptic device308 within the aperture regardless of the respective shapes of the radiation source and the aperture. In order to provide a transition for radiation passing fromradiation source302 tooptic device308, a sealant may be placed to fill the spaces betweenradiation source302 andoptic device308. Accordingly, a sealant may be placed in the spaces for any shape of the radiation source and any shape of the aperture within the optic device. The sealant may provide a transition for radiation passing from the respective radiation source to the optic device.
• In an exemplary embodiment, the sealant may fill in each of the spaces as much as possible in order to obtain the best efficiency of radiation transfer from theradiation source302 to theoptic device308. The efficiency of transferring radiation fromradiation source302 tooptic device308 may decrease if each of the spaces are not completely filled. The sealant may also be used as a binding material to bind theoptic device308 to theradiation source302. A better bond between theoptic device308 and theradiation source302 may result in better efficiency of radiation transfer fromradiation source302 tooptic device308.
• In an exemplary embodiment, the sealant material may be a silicon gel, epoxy, polymer or any other sealant that is substantially light transmissive, that has the necessary refractive index, and that is pliable enough to substantially seal the spaces. The sealant material may have a refractive index that is between the refractive index ofradiation source302 andoptic device308. In an exemplary embodiment, the refractive index of the sealant may be in a range that is between the refractive index of theradiation source302 and the refractive index ofoptic device308. For example, the refractive index of the sealant may be in the range of about 1.5 to about 2.3. In an exemplary embodiment enough sealant should be used that may effect substantially filling of all spaces including, but not limited to,spaces320,324 and326. Using a radiation source without a dome and using a sealant such as a gel as an interface between the radiation source and the optic device may allow the design of an optic device that is substantially shorter than an optic device that uses a radiation source that is encapsulated with a dome. For example, referring toFIG. 2, theheight260 ofapparatus200 may be about 20 mm. In contrast, referring toFIG. 3, theheight360 ofapparatus300 may be about 3 mm. Using a sealant instead of a dome therefore gives a user much more flexibility in the design and manufacture of a light emitting apparatus that incorporates the features of SPE™ technique. For example, by using more or less sealant, a light emitting apparatus may be manufactured that has a height in a range of about 2 mm to about 10 mm.
• Referring back toFIG. 3, alens340 may be placed on top of, and over, theoptic device308 and thedown conversion material310.Lens340 may be used to focus light that may be forward transferred from thedown conversion material310 and light that may be reflected by thereflector306.Lens340 may also have a refractive index that may compensate for the refractive index of the air contained inspace342 that is formed when thelens340 is placed on theoptic device308 and downconversion material310.Lens340 may be a spherical lens or may be any other shape that may direct the light as needed.Lens340 may be attached to down conversion material using adhesive material. In an alternative embodiment,lens340 may also be attached to theheat sink304. In yet another alternative embodiment,lens340 may be attached to both thedown conversion material310 and thereflective cup306.
• FIGS. 6 to 9 illustrate alternative embodiments of the apparatus shown inFIGS. 3-5. In each of these embodiments, theoptic device308, downconversion material310,radiation source302 and aperture (not shown inFIGS. 6-9) may be the same as discussed with respect to any ofFIGS. 3-5.FIG. 6 illustrates the apparatus as having a thin film with amicro-lens array342 on top of theoptic device308 and thedown conversation material310. In this embodiment, thelens array342 may be attached to thedown conversion material310 alone, to theheat sink304 alone, or to both thedown conversion material310 and theheat sink304.FIG. 7 illustrates the apparatus without any lens on top of theoptic device308 and thedown conversion material310.FIG. 8 illustrates alens344 that may be attached only to thedown conversion layer310. Thelens344 in this embodiment may be the any of the lenses illustrated and described in connection withFIGS. 3-5 and7.FIG. 9 illustrates alens346 that may be any of the lenses illustrated and described in this application and aheat sink348 withreflective surfaces350 and352. Thereflective surfaces350 and352 ofheat sink348 may not have a parabolic shape or an elliptical shape. Instead, one or both ofreflective surfaces350 and352 may have a linear shape.
• FIG. 10 illustrates another embodiment of the invention. This embodiment has a plurality of short wavelength radiation sources.FIG. 10 illustrates anoptic device308 with adown conversion material310 and anaperture322 as illustrated inFIG. 5. These elements may have the same sizes as the corresponding elements illustrated inFIG. 5. However, instead of a single shortwavelength radiation source302 as shown inFIG. 5, the embodiment illustrated inFIG. 10 may have three shortwavelength radiation sources400,402,404 resting onheat sink304. None of the shortwavelength radiation sources400,402,404 may be encapsulated by a dome. Because the size ofaperture322 inFIG. 10 may be the same size asaperture322 inFIG. 5, the sizes of one or more ofradiation sources400,402,404 may be smaller than the size ofradiation source302 shown inFIG. 5. In an exemplary embodiment, the sizes of one or more ofradiation sources400,402, and404 may be about 0.3 mm by about 0.3 mm by about 0.3 mm. AlthoughFIG. 10 shows three radiation sources being placed onheat sink304, it will be understood that two short wavelength radiation sources may be used; or more than three short wavelength radiation sources may be used as long as they fit withinaperture322. A sealant may be used between at least one of the radiation sources and the surface insideaperture322. The sealant for this embodiment of the invention and for all embodiments of the invention disclosed in this application may be the same sealant discussed with respect toFIGS. 3-5.
• FIG. 11 illustrates another embodiment of the invention having a plurality of short wavelength radiation sources. InFIG. 11, three shortwavelength radiation sources302A,302B, and302C, each of which may be the same size as shortwavelength radiation source302 that is illustrated inFIG. 5. None of theradiation sources302A,302B, and302C may be encapsulated by a dome. In order to accommodate these three radiation sources, theoptic device408 having adown conversion material410 onportion416 which may be an end ofoptic device408 may be a larger version ofoptic device308 illustrated inFIGS. 3,5, and10. In an exemplary embodiment, the size ofaperture422 illustrated inFIG. 11 may be about 6 mm. In addition, the size ofheat sink412 may be a larger version ofheat sink304 that is illustrated inFIGS. 3,5, and10. In an exemplary embodiment, thelength470 ofheat sink412 may be about 10 mm. AlthoughFIG. 11 shows three shortwavelength radiation sources302A,302B,302C placed onheat sink412, it will be understood that two short wavelength radiation sources may be used; or more than three short wavelength radiation sources may be used. If the number of radiation sources is different than the embodiment illustrated inFIG. 11, the size ofaperture422 and the size ofheat sink412 may be changed to accommodate them. As with the other embodiments in this application, a sealant may be used to seal all spaces (not shown) between each of theoptic devices302A,302B,302C and the surface ofoptic device408 that is insideaperture422.
• FIG. 12 illustrates yet another embodiment of the invention having a plurality of short wavelength radiation sources. InFIG. 12, asingle heat sink500 is shown having three separateheat sink sections502,504,506. Each of the heat sink sections may have its own respective reflective surfaces formingreflective cups508,510,512 and its own respective short wavelength radiation source identified as shortwavelength radiation sources514,516, and520. In this embodiment, respectiveoptic devices522,524, and526 having respective downconversion materials528,530,532 andrespective apertures534,536, and538 may be used. As with all of the other embodiments disclosed in this application, none of theradiation sources514,516, or520 may have a dome. Instead, a sealant may be used in the spaces (not shown) between each of the respective radiation sources and the respective inside surfaces ofrespective apertures534,536,538 ofoptic devices522,524,526. AlthoughFIG. 12 shows three radiation sources and other matching elements, it will be understood that two radiation sources may be used; or more than three radiation sources may be used. If the number of radiation sources is different than is shown in the embodiment illustrated inFIG. 12, the number of optic devices may also be different in order to match the number of radiation sources.
• It will also be understood that for all embodiments illustrated in this application, various configurations of lenses and various attachments of such lenses may the same as illustrated and explained with respect to the embodiments illustrated inFIGS. 6 to 9.
• FIG. 14 illustrates an exemplary embodiment of a method that may be used to manufacture any of the embodiments of the invention described in connection withFIGS. 3-12. The method may be used to manufacture a light emitting apparatus that has a radiation source for emitting short wavelength radiation, a down conversion material that receives at least some short wavelength radiation emitted by the radiation source, and an optic device configured to extract radiation back transferred from the down conversion material and/or radiation emitted from the short wavelength radiation source. As shown inBlock700, the down conversion material is placed on a first portion of the optic device. As explained previously, the first portion of the optic device may be a first end of the optic device. As shown inBlock702, an aperture is formed in a second portion of the optic device. The second portion of the optic device may be a second end of the optic device. It will be understood that the step of forming the aperture as shown inBlock702 may be performed before the step of placing the down conversion material as shown inBlock700.Block704 shows that a sealant is placed on a surface of the second portion of the optic device, where the surface is inside the aperture. After the sealant is placed on the inside surface of the aperture,Block706 shows that the radiation source may be placed into the aperture. When the radiation source is placed into the aperture, at least one surface of the radiation source may contact the sealant.
• After the radiation source is placed into the aperture, at least first and second spaces between the optic device and the radiation source may be sealed, as shown inBlocks708 and710. After the spaces between the radiation source and the inside of the aperture have been sealed, the optic device, with the radiation source inside the aperture, may be placed on a support, as indicated inBlock712. The support may be a heat sink. It will be understood that the steps illustrated inBlocks708 and710 may be performed after the step illustrated inBlock712. After spaces between the radiation source and the inside of the aperture have been sealed and the device placed upon the support, a lens may be placed adjacent the down conversion material, as indicated inBlock714.
• FIG. 15 illustrates another method of manufacturing any of the embodiments of the invention described in connection withFIGS. 3-12. In this method, the steps shown inBlocks800,802, and804 are the same as the steps shown inBlocks700,702, and704. After a sealant is placed on the inside surface of the aperture, the radiation source may be placed on the support, which may be a heat sink, as shown inBlock806. It will be understood that the step of placing the radiation source on a support as shown inBlock806 may be performed before the steps illustrated inBlocks800,802, and804. After the radiation source is placed on the support, the optic device, with the sealant on its surface inside the aperture, is placed onto the support and over the radiation source, as shown inBlock808. When this step is completed, the optic device may be substantially surrounding the radiation source, also as shown inBlock808. At this point, a plurality of spaces between the optic device and the radiation source may be sealed, as shown inBlock810. Then, a lens may be placed adjacent the down conversion material, as shown inBlock812. It will be understood that the step illustrated inBlock812 and the step illustrated inBlock714 may not be performed, for example, in manufacturing the embodiment shown inFIG. 7, where no such lens may be used.
• FIG. 13 illustrates still another embodiment of the invention, wherein a plurality of reflective surfaces are adjacent the radiation source and the optic device. Alight emitting apparatus600 is shown inFIG. 13.Light emitting apparatus600 has anoptic device608 with adown conversion material610 on aportion616 of theoptic device608 that may be an end ofoptic device608.Apparatus600 may also have a shortwavelength radiation source602 positioned on aheat sink604. As is the case with all of the other embodiments in this application, shortwavelength radiation source602 may not be encapsulated by a dome.Heat sink604 may form two reflective cups havingreflective surfaces612 and614. The first reflective cup andsurface612 may be adjacent the second reflective cup andsurface614. The radius ofreflective surface612 may be the same or different than the radius ofreflective surface614. In addition,reflective surface612 may be comprised of a plurality of surfaces each of which may have a different radius. The number of radii comprisingreflective surface612 may depend upon the height ofoptic device608.
• Firstreflective surface612 may partially surroundoptic device608 and downconversion material610. As discussed regarding other embodiments of this invention,reflective surface612 may direct light extracted fromoptic device608 in the direction of downconversion material610 and in the direction oflens640.
• Radiation source602 may be positioned at the bottom ofheat sink604 so that theradiation source602 may be partially surrounded by thereflective surface614. Firstreflective surface612 may be coupled to secondreflective surface614 at points illustrated bypoints613,615. A distance from thebottom605 ofheat sink604 topoints613 and615 may be equal to or greater than the height ofradiation source602. A diameter ofend portion618 ofoptic device608 may be substantially equal to the distance betweenpoints613 and615.
• In effect,radiation source602 may be positioned in a well formed by thebottom605 ofheat sink604 and the reflective cup formed byreflective surface614. Reflective surface may direct radiation emitted from the sides ofradiation source602 intooptic device608. Some of the radiation reflected byreflective surface614 may be transmitted intooptic device608 and may impinge on downconversion material610. Some of the radiation reflected byreflective surface614 may be transmitted intooptic device608 and may leaveoptic device608 throughwalls620,622 without impinging upon downconversion material610. Some of the radiation reflected byreflective surface614 may be directed towardlens640 without impinging on downconversion material610.
• In this embodiment of the invention,optic device608 does not have an aperture in itsend618.End618 ofoptic device608 may be placed on atop surface603 ofradiation source602. A sealant (not shown) may be placed inspaces642,644 betweenradiation source602 andreflective surface614 and inspace646 betweenradiation source602 and end618 ofoptic608. The sealant may have the same characteristics and may be used for the same purposes as described in connection with other embodiments of this invention.
• A method of manufacture will now be described for manufacturing the apparatus illustrated inFIG. 13.FIG. 16 illustrates an exemplary embodiment of the method that may be used to manufacture the embodiment of the invention described in connection withFIG. 13.
• For this method of manufacturing a light emitting apparatus, there is a radiation source for emitting short wavelength radiation, a down conversion material that receives at least some short wavelength radiation emitted by the radiation source, an optic device configured to extract radiation back transferred from the down conversion material and/or radiation emitted from the short wavelength radiation source. There is also a first reflective cup and a second reflective cup. The second reflective cup is adjacent the first reflective cup and forms a well.
• As shown inBlock900, the down conversion material is placed on a first portion of the optic device. As shown inBlock902, a first surface of the radiation source may be placed on a first surface of the well. After this step is performed, the radiation source may be partially surrounded by the reflective cup forming the well. A first sealant may then be placed between at least a second surface of the radiation source and a second surface of the well, as shown inBlock904. A second sealant may then be placed on a least a third surface of the radiation source, as shown inBlock906. The same kind of material, or different kinds of materials, may be used for the first and second sealants. As shown inBlock908, the optic device may then be placed within the first reflective cup so that the optic device is partially surrounded by the first reflective cup and in contact with the second sealant. A lens may then be placed adjacent the down conversion material, as shown inBlock910.
• Another embodiment of the invention is illustrated inFIGS. 17 and 18.FIG. 17 is a partial cross-section view of an alternative embodiment of an optic device that may be mounted over a radiation source and onto a reflector.FIG. 17 showsoptic device1008 and downconversion material1010 on anend1016 ofoptic device1008.FIG. 17shows aperture1020 inend1018 ofoptic device1008. Althoughaperture1020 is illustrated as having a curved shape,aperture1020 may have another shape that may more closely approximate a shape of a radiation source. For example,aperture1020 may have a trapezoidal shape.FIG. 17 also illustrates aradiation source1032 mounted on aheat sink1034 having areflective surface1036 forming a reflective cup. The dimensions and characteristics of theoptic device1008, theaperture1020, thedown conversion material1010, theradiation source1032, theheat sink1034 and thereflective surface1036 may be the same as the dimensions and characteristics described in this application with respect to other embodiments of the invention.Radiation source1032 has aheight1033. The optic device may also be mounted over theradiation source1032 and onto the heat sink in the same way as has been described with respect to other embodiments of the invention.FIG. 18 illustratesoptic device1008 after it has been mounted overradiation source1032 and ontoheat sink1034.
• Referring toFIGS. 17 and 18,optic device1008 may haveside walls1040 and1042 betweenend1016 andend1018. A first portion of theside walls1040,1042 may be substantially light transmissive and a second portion of theside walls1040,1042 may not be substantially light transmissive. Areflective material1046A may be applied to a portion ofwall1040 and areflective material1046B may be applied to a portion ofwall1042.Reflective materials1046A and1046B may be a highly reflective paint. In an exemplary embodiment, the paint may be made of barium-sulfate-based paint and may exhibit about 97% reflectivity. In an alternative embodiment, a vaporized aluminum coating, or a wavelength selective coating may be used instead of paint.
• As illustrated inFIG. 18, short wavelength radiation may be emitted not only from the top1050 ofradiation source1032, short wavelength radiation may also be emitted from thesides1052 and1054 ofradiation source1032.Arrows1056 and1058 indicate exemplary short wavelength radiation rays being emitted fromsides1052 and1054, respectively, of shortwavelength radiation source1032. It will be understood that short wavelength radiation rays in addition toexemplary radiation rays1056 and1058 may also be emitted fromsides1052 and1054. In the absence ofreflective materials1046A and1046B, radiation rays from thesides1052 and1054 may be extracted throughwalls1040 and1042 ofoptic device1008 and reflect off ofreflective surfaces1036. Some of the radiation reflected fromreflective surfaces1036 may be directed so that they impinge on downconversion material1010. Other radiation reflected fromreflective surfaces1036 may not be directed. Instead, for example, some reflected radiation may be directed toward and throughspaces1060 and1062 betweendown conversion material1010 andreflective surfaces1036. Any radiation that is reflected toward and throughspaces1060 and1062 will not be converted into white light bydown conversion material1010.
• When reflective material1046 is placed on the bottom portion ofoptic device1008, radiation emitted fromsides1052 and1054 ofradiation source1032 may be directed toward, and impinge upon, down conversion material by reflective material1046.FIG. 18 showsexemplary radiation rays1070 and1072 that may be reflected byreflective materials1046A,1046B whenexemplary radiation rays1056 and1058 impinge onreflective materials1046A,1046B. It will be understood that short wavelength radiation rays, in addition to exemplary reflectedradiation rays1070 and1072, may be emitted fromsides1052 and1054 and may be reflected byreflective materials1046A,1046B towarddown conversion material1010.
• It will be understood that a thickness ofreflective materials1046A,1046B has been exaggerated for purposes of illustration. In an exemplary embodiment, the thickness ofreflective materials1046A,1046B may be much thinner relative to the other elements illustrated inFIGS. 17 and 18. In an exemplary embodiment, as illustrated inFIGS. 17 and 18,reflective materials1046A,1046B may be disposed along the outside ofwalls1040 and1042, respectively. In an alternative embodiment,reflective materials1046A,1046B may be embedded withinwalls1040 and1042, respectively. In another alternative embodiment,reflective materials1046A,1046B may be disposed along an inside surface ofwalls1040 and1042, respectively.
• Referring toFIGS. 17 and 18, alength1047 ofreflective material1046A,1046B may be up to 90% of the length ofwalls1040 and1042, respectively. As shown inFIG. 18, an exemplary embodiment ofreflective materials1046A,1046B may extend from a point that is adjacent thebottom1051 ofradiation source1032 torespective end points1049A,1049B ofreflective materials1046A,1046B that are beyond the top1050 ofradiation source1032 and belowend1016 ofoptic device1008. In an alternative embodiment, thelength1047 of reflective material1046 may result inend points1049A,1049B of one or both ofreflective materials1046A,1046B being equal to, beyond, or under theheight1033 ofradiation source1032 so that different amount of radiation emitted fromsides1052 and1054 hits thedown conversion material1010 depending on thelength1047. That is, lengths ofreflective materials1046A and1046B may be the same or they may be different and the respective lengths ofreflective materials1046A and1046B may be symmetric or not symmetric.
• In this embodiment, the first portion ofwalls1040,1042 betweenend points1049A,1049B ofreflective materials1046A,1046B and end1016 ofoptic device1008 may be substantially light transmissive. Because of the presence ofreflective materials1046A,1046B, the second portion ofwalls1040,1042 between the bottom1051 ofradiation source1032 andend points1049A,1049B may not be substantially light transmissive. Instead, the second portion ofwalls1040,1042 may be substantially reflective.
• Another advantage of usingreflective materials1046A,1046B may be a reduction of a cost to manufacture an optic device such asoptic device1008. Ifwalls1040,1042 ofoptic device1008 are substantially light transmissive over their entire length, thewalls1040,1042 may have to be highly polished along their entire length in order to use principles of TIR. Whenreflective materials1046A,1046B are applied to the bottom portion of the optic device, the cost of manufacturing optic device may be reduced because it may not be necessary to highly polishreflective walls1040 and1042 along their entire length. Instead, it may be necessary to highly polish only those portions ofreflective walls1040 and1042 that do havereflective material1046A,1046B. Referring toFIG. 18, whenreflective materials1046A,1046B are disposed on or inreflective walls1040 and1042, it may be necessary to highly polishreflective walls1040 and1042 only fromend points1049A,1049B ofreflective materials1046A,1046B to end1016 ofoptic device1008. The remainder ofwalls1040 and1042 that coincide withlength1047 ofreflective materials1046A,1046B may have surfaces that are more rough than the surfaces betweenend points1049A,1049B and end1016 ofoptic device1008. Reducing the amount of polishing that may be performed onoptic device1008 may substantially reduce the cost ofmanufacturing optic device1008.
• Still another embodiment of the invention is illustrated inFIGS. 19 and 20.FIG. 19 is a partial cross-section view of this embodiment of the invention.FIG. 20 is another partial cross-section view of this embodiment illustrating an optic device being coupled to the other elements of the embodiment. The embodiment illustrated inFIGS. 19 and 20 is substantially the same as the embodiment that is illustrated inFIGS. 17 and 18.
• The embodiment illustrated inFIGS. 19 and 20 may have an alternative embodiment of aheat sink1034. InFIGS. 19 and 20, an alternative form of anaperture1022 is illustrated. As explained in an earlier part of this application, alternative shapes of the aperture may be used. In this embodiment,heat sink1034 has a raisedportion1035. Theheight1085 of raisedportion1035 may be up to 50% of theheight1087 ofheat sink1034.Radiation source1032 may be disposed on top of raisedportion1035.FIG. 20 illustratesexemplary radiation rays1056,1058 emitted from the sides ofradiation source1032 and being reflected towarddown conversion material1010 byreflective materials1046A,1046B as exemplary reflectedradiation rays1070,1072. As explained previously, more or fewer radiation rays may be emitted from the sides ofradiation source1032 and reflected towarddown conversion material1010 byreflective materials1046A,1046B.
• In the embodiment illustrated inFIG. 20, the aperture may cover theentire radiation source1032 and substantially all of the raisedportion1035 ofheat sink1034. In addition, sides1080,1082 of raisedportion1035 may have reflective surfaces on them. The aperture may also coverreflective surfaces1080,1082. In other words,radiation source1032 may be fully immersed within the aperture and the raisedportion1035 may be at least partially immersed in the aperture.
• An advantage of the embodiment illustrated inFIG. 20 is that it may reduce the amount of radiation that may be reflected back towardradiation source1034 because there may be a greater volume of space between the sides ofradiation source1034 and thereflective materials1046A,1046B.
• FIGS. 21 and 22 illustrate exemplary and alternative embodiments of methods that may be used to manufacture the embodiments illustrated inFIGS. 17-20. The method illustrated inFIG. 21 is the same method that has been illustrated inFIG. 14 with the inclusion of an additional step shown inBlock701. The step shown inBlock701 involves placing reflective material along, or embedded in, one or more walls of the optic device. As illustrated, the step inBlock701 may be performed after the step shown inBlock700 and before the step shown inBlock702. However, it will be understood that the steps illustrated inBlocks700,701, and702 may be performed in any order.
• The method illustrated inFIG. 22 is the same method that has been illustrated inFIG. 15 with the inclusion of an additional step shown onBlock801. The step shown inBlock801 involves placing reflective material along, or embedded in, one or more walls of the optic device. As illustrated, the step inBlock801 may be performed after the step shown inBlock800 and before the step shown inBlock802. However, it will be understood that the steps illustrated inBlocks800,801, and802 may be performed in any order.
• In all of the methods of manufacture described in this application, it will be understood that the short wavelength radiation source used in each of the various manufacturing processes does not have a dome. In order to obtain a short wavelength radiation source without a dome, a user may purchase it without the dome or may purchase it with a dome and then remove the dome as an additional step in the manufacturing process.
• Although the invention is illustrated and described herein with reference to specific embodiments, the invention is not intended to be limited to the details shown. Rather, various modifications may be made in the details within the scope and range of equivalents of the claims and without departing from the invention.

Claims (20)

1. A light emitting apparatus comprising:

a radiation source being not encapsulated by a dome;

an optic device comprising a top surface distal the radiation source, a bottom surface proximal the radiation source and having a width smaller than that of the top surface, and a transparent sidewall extending between the top surface and the bottom surface; and

a down conversion material disposed adjacent to or on the top surface.

2. The light emitting apparatus ofclaim 1, further comprising an aperture between the optic device and the radiation source.

3. The light emitting apparatus ofclaim 1, further comprising a sealant forming an interface between the radiation source and the optic device.

4. The light emitting apparatus ofclaim 1, further comprising a lens placed on the optic device.

5. The light emitting apparatus ofclaim 1, further comprising a layer near the down conversion material and comprising scattering particles.

6. The light emitting apparatus ofclaim 1, wherein the down conversion material comprises a phosphor or quantum dots.

7. The light emitting apparatus ofclaim 1, wherein the down conversion material comprises multiple phosphors or multiple quantum dots to produce different colored down-converted radiation.

8. The light emitting apparatus ofclaim 1, wherein the radiation source has a dimension about 1 mm.

9. A light emitting apparatus comprising:

a first radiation source;

a second radiation source having a dimension smaller than that of the first radiation source;

an optic device comprising a top surface distal the radiation sources, a bottom surface proximal the radiation sources, and a transparent sidewall extending between the top surface and the bottom surface; and

a down conversion material disposed adjacent to or on the top surface and extending from the transparent sidewall.

10. The light emitting apparatus ofclaim 9, further comprising an aperture between the optic device and the radiation sources.

11. The light emitting apparatus ofclaim 9, further comprising a sealant between the optic device and the radiation sources.

12. The light emitting apparatus ofclaim 9, wherein one of the first radiation source and the second radiation source has a dimension about 1 mm.

13. The light emitting apparatus ofclaim 9, wherein at least one of the first radiation source and the second radiation source is not encapsulated by a dome.

14. The light emitting apparatus ofclaim 9, wherein the bottom surface has a width smaller than that of the top surface.

15. The light emitting apparatus ofclaim 9, wherein the down conversion material comprises a single phosphor or multiple phosphors.

16. A light emitting apparatus comprising:

a first radiation source without a dome;

an optic device having a height smaller than 20 mm, and comprising a top surface distal the first radiation source, a bottom surface proximal the first radiation sources, and a transparent sidewall extending between the top surface and the bottom surface;

a lens; and

a down conversion material between the lens and the radiation source.

17. The light emitting apparatus ofclaim 16, further comprising a second radiation source having a dimension smaller than that of the first radiation source.

18. The light emitting apparatus ofclaim 16, further comprising a sealant between the optic device and the first radiation source.

19. The light emitting apparatus ofclaim 16, wherein the bottom surface has a width smaller than that of the top surface.

20. The light emitting apparatus ofclaim 16, wherein the transparent sidewall comprises a straight portion, a curved portion, or both thereof.

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