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US20110273410A1 - Led display apparatus having active devices and fabrication method thereof - Google Patents

Led display apparatus having active devices and fabrication method thereofDownload PDF

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US20110273410A1
US20110273410A1US13/095,295US201113095295AUS2011273410A1US 20110273410 A1US20110273410 A1US 20110273410A1US 201113095295 AUS201113095295 AUS 201113095295AUS 2011273410 A1US2011273410 A1US 2011273410A1
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led
block
layer
electrode
receptor
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Byung Gook Park
Chang Su Seo
Byung Doo Yoo
Keun Kee Hong
Sang Yeop Jee
Jae Min Jeong
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SNU R&DB Foundation
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Assigned to SNU R&DB FOUNDATIONreassignmentSNU R&DB FOUNDATIONCORRECTIVE ASSIGNMENT TO CORRECT THE INVENTORSHIP PREVIOUSLY RECORDED ON REEL 026191 FRAME 0117. ASSIGNOR(S) HEREBY CONFIRMS THE INVENTORS AS BYUNG-GOOK PARK, CHANG SU SEO, BYUNG DOO YOO, KEUN KEE HONG, SANG YEOP JEE AND JAE MIN JEONG.Assignors: HONG, KEUN KEE, JEE, SANG YEOP, JEONG, JAE MIN, SEO, CHANG SU, YOO, BYUNG DOO, PARK, BYUNG-GOOK
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Abstract

An active matrix LED display apparatus and a fabrication method thereof are provided. The active matrix LED display apparatus enables to miniaturize pixel by a formation of wiring on bottom layer and an assembly of each block through each eutectic layer into each transistor block receptor and/or each LED block receptor formed according to each color element unit, and to be embodied with high luminance, low power consumption, high reliability and superior optical property by assembling a transistor block having high electron mobility. And the fabricating method of the present invention enables to make efficiently an AM-LED display apparatus at room temperature in a short time by using different shapes of receptor and block depending on the function of a transistor and/or on the color of an LED.

Description

Claims (66)

1. An LED display apparatus comprising:
a buffer layer formed on a substrate;
a switching transistor active layer and a driving transistor active layer formed separately from each other and having a source and a drain in both sides of the each active layer on the buffer layer in a color element unit;
a first insulating layer formed to cover the switching and the driving transistor active layers on the substrate;
a scan line formed across between the source and the drain of the switching transistor on the first insulating layer;
a cathode line formed parallel to and separately from the scan line on the first insulating layer;
a storage capacitor bottom electrode formed across between the source and the drain of the driving transistor and connected electrically to the drain of the switching transistor on the first insulating layer in a color element unit;
a second insulating layer formed to cover the scan line, the cathode line and the storage capacitor bottom electrode on the first insulating layer;
a data line formed vertically to the scan line and connected electrically to the source of the switching transistor on the second insulating layer;
a power supply line formed parallel to and separately from the data line and connected electrically to the source of the driving transistor on the second insulating layer;
a storage capacitor top electrode formed to overlap the storage capacitor bottom electrode and connected electrically to the power supply line on the second insulating layer in a color element unit;
an anode contact layer formed between the data line and the power supply line and connected electrically to the drain of the driving transistor on the second insulating layer in a color element unit;
an LED block receptor formed with a third insulating layer to cover at least one part of the data line, the power supply line, the storage capacitor top electrode and the anode contact layer on the second insulating layer in a color element unit;
a cathode eutectic layer and an anode eutectic layer formed separately from each other and connected electrically to the cathode line and the anode contract layer, respectively, in the LED block receptor; and
an LED block of the color element unit assembled into the LED block receptor through electrical connections of the cathode eutectic layer and the anode eutectic layer to a cathode electrode and an anode electrode of the LED block, respectively.
16. An LED display apparatus comprising:
a data line, a scan line and a cathode line formed parallel to and separately from each other on a substrate;
a storage capacitor bottom electrode formed between the scan line and the cathode line in a color element unit;
a first insulating layer formed to cover the data line, the scan line, the cathode line and the storage capacitor bottom electrode on the substrate;
a power supply line formed vertically to the data line on the first insulating layer;
a storage capacitor top electrode formed to overlap the storage capacitor bottom electrode and connected electrically to the power supply line on the first insulating layer in a color element unit;
an anode contact layer formed separately from the power supply line on the first insulating layer in a color element unit;
a switching transistor receptor, a driving transistor receptor and an LED block receptor formed with a second insulating layer to cover at least one part of the power supply line, the storage capacitor top electrode and the anode contact layer on the first insulating layer in a color element unit;
a source eutectic layer, a gate eutectic layer and a drain eutectic layer of a switching transistor formed separately from each other and connected electrically to the data line, the scan line and the storage capacitor bottom electrode, respectively, in the switching transistor receptor;
a gate eutectic layer, a source eutectic layer and a drain eutectic layer of a driving transistor formed separately from each other and connected electrically to the storage capacitor bottom electrode, the power supply line and the anode contact layer, respectively, in the drive transistor receptor;
a cathode eutectic layer and an anode eutectic layer formed separately from each other and connected electrically to the cathode line and the anode contact layer, respectively, in the LED block receptor;
a switching transistor block of the color element unit assembled into the switching transistor receptor through electrical connections of the source eutectic layer, the gate eutectic layer and the drain eutectic layer of the switching transistor to a source electrode, a gate electrode and a drain electrode of the switching transistor block, respectively;
a driving transistor block of the color element unit assembled into the driving transistor receptor through electrical connections of the source eutectic layer, the gate eutectic layer and the drain eutectic layer of the driving transistor to a source electrode, a gate electrode and a drain electrode of the driving transistor block, respectively; and
an LED block of the color element unit assembled into the LED block receptor through electrical connections of the cathode eutectic layer and the anode eutectic layer to a cathode electrode and an anode electrode of the LED block, respectively.
25. The LED display apparatus ofclaim 22,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, has a p-type nitrogen compound semiconductor layer/nitrogen compound activation layer/n-type nitrogen compound semiconductor layer/cathode electrode and a p-type nitrogen compound semiconductor layer/anode electrode formed near by in the same direction of each other on the LED substrate or has an n-type nitrogen compound semiconductor layer/nitrogen compound activation layer/p-type nitrogen compound semiconductor layer/anode electrode and an n-type nitrogen compound semiconductor layer/cathode electrode formed near by in the same direction of each other on the LED substrate.
26. The LED display apparatus ofclaim 23,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, has a p-type nitrogen compound semiconductor layer/nitrogen compound activation layer/n-type nitrogen compound semiconductor layer/cathode electrode and a p-type nitrogen compound semiconductor layer/anode electrode formed near by in the same direction of each other on the LED substrate or has an n-type nitrogen compound semiconductor layer/nitrogen compound activation layer/p-type nitrogen compound semiconductor layer/anode electrode and an n-type nitrogen compound semiconductor layer/cathode electrode formed near by in the same direction of each other on the LED substrate.
27. The LED display apparatus ofclaim 24,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, has a p-type nitrogen compound semiconductor layer/nitrogen compound activation layer/n-type nitrogen compound semiconductor layer/cathode electrode and a p-type nitrogen compound semiconductor layer/anode electrode formed near by in the same direction of each other on the LED substrate or has an n-type nitrogen compound semiconductor layer/nitrogen compound activation layer/p-type nitrogen compound semiconductor layer/anode electrode and an n-type nitrogen compound semiconductor layer/cathode electrode formed near by in the same direction of each other on the LED substrate.
34. An LED display apparatus comprising:
a power supply line formed on a substrate;
a storage capacitor bottom electrode connected electrically and vertically to the power supply line on the substrate in a color element unit;
a first insulating layer formed to cover the power supply line and the storage capacitor bottom electrode on the substrate;
a data line and a scan line formed parallel to each other and formed vertically to the power supply line on the first insulating layer;
a storage capacitor top electrode formed to overlap the storage capacitor bottom electrode and formed near by the scan line on the first insulating layer in a color element unit;
an anode contact layer formed separately from and near by the storage capacitor top electrode on the first insulating layer in a color element unit;
a switching transistor receptor, a driving transistor receptor and an LED block receptor formed with a second insulating layer to cover at least one part of the data line, the scan line, the storage capacitor top electrode and the anode contact layer on the first insulating layer in a color element unit;
a source eutectic layer, a gate eutectic layer and a drain eutectic layer of a switching transistor formed separately from each other and connected electrically to the data line, the scan line and the storage capacitor top electrode, respectively, in the switching transistor receptor;
a gate eutectic layer, a source eutectic layer and a drain eutectic layer of a driving transistor formed separately from each other and connected electrically to the storage capacitor top electrode, the power supply line and the anode contact layer, respectively, in the driving transistor receptor;
an anode eutectic layer connected electrically to the anode contact layer in the LED block receptor;
a switching transistor block of the color element unit assembled into the switching transistor receptor through electrical connections of the source eutectic layer, the gate eutectic layer and the drain eutectic layer of the switching transistor to a source electrode, a gate electrode and a drain electrode of the switching transistor block, respectively;
a driving transistor block of the color element unit assembled into the driving transistor receptor through electrical connections of the source eutectic layer, the gate eutectic layer and the drain eutectic layer of the driving transistor to a source electrode, a gate electrode and a drain electrode of the driving transistor block, respectively;
an LED block of the color element unit assembled into the LED block receptor through electrical connection of the anode eutectic layer to an anode electrode of the LED block;
a color element defining layer formed with a third insulating layer to expose a part of the LED block on the substrate assembled with the each block; and
a cathode line formed to connect electrically to the exposed part of the LED block on the color element defining layer.
43. The LED display apparatus ofclaim 40,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, is formed by stacking sequentially from bottom with an anode electrode/LED substrate/p-type compound semiconductor/compound active layer/n-type compound semiconductor/cathode electrode to have the shape of a wide top and a narrow bottom or is formed by stacking sequentially from bottom with an n-type compound semiconductor/compound active layer/p-type compound semiconductor to have the shape of a wide bottom and a narrow top.
44. The LED display apparatus ofclaim 41,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, is formed by stacking sequentially from bottom with an anode electrode/LED substrate/p-type compound semiconductor/compound active layer/n-type compound semiconductor/cathode electrode to have the shape of a wide top and a narrow bottom or is formed by stacking sequentially from bottom with an n-type compound semiconductor/compound active layer/p-type compound semiconductor to have the shape of a wide bottom and a narrow top.
45. The LED display apparatus ofclaim 42,
wherein the switching transistor block receptor, the driving transistor block receptor and the LED block receptor are formed to have a wide opening and a narrow bottom, respectively,
wherein the switching transistor block and the driving transistor block form a substrate, a source electrode, a gate electrode and a drain electrode to correspond to each shape of the each transistor block receptor, respectively, and
wherein the LED block, for corresponding to the shape of the LED block receptor, is formed by stacking sequentially from bottom with an anode electrode/LED substrate/p-type compound semiconductor/compound active layer/n-type compound semiconductor/cathode electrode to have the shape of a wide top and a narrow bottom or is formed by stacking sequentially from bottom with an n-type compound semiconductor/compound active layer/p-type compound semiconductor to have the shape of a wide bottom and a narrow top.
52. A method for fabricating the LED display apparatus ofclaim 1, comprising:
a first step, depositing a buffer layer on a display substrate and forming a switching transistor active layer and a driving transistor active layer in a color element unit;
a second step, depositing sequentially a first insulating layer and a conductive material on a whole surface of the substrate and etching the conductive material to form a scan line, a cathode line and a storage capacitor bottom electrode;
a third step, depositing sequentially a second insulating layer and a conductive material on a whole surface of the substrate and etching the conductive material to form a data line, a power supply line, a storage capacitor top electrode and an anode contact layer;
a fourth step, depositing a third insulating layer on a whole surface of the substrate, etching the third insulating layer to form an LED block receptor in a color element unit and forming a cathode eutectic layer and an anode eutectic layer in the LED block receptor; and
a fifth step, assembling an LED block of the color element unit into the LED block receptor by a fluidic self-assembly process.
58. A method for fabricating the LED display apparatus ofclaim 16, comprising:
a first step, depositing a conductive material on a display substrate and etching the conductive material to form a data line, a scan line, a cathode line and a storage capacitor bottom electrode;
a second step, depositing sequentially a first insulating layer and a conductive material on a whole surface of the substrate and etching the conductive material to form a power supply line, a storage capacitor top electrode and an anode contact layer;
a third step, depositing a second insulating layer on a whole surface of the substrate, etching the second insulating layer to form a switching transistor block receptor, a driving transistor block receptor and an LED block receptor in a color element unit and forming eutectic layer in the each block receptor; and
a fourth step, assembling a switching transistor block, a driving transistor block and an LED block into the each receptor by a fluidic self-assembly process.
64. A method for fabricating the LED display apparatus ofclaim 34, comprising:
a first step, depositing a conductive material on a display substrate and etching the conductive material to form a power supply line and a storage capacitor bottom electrode;
a second step, depositing sequentially a first insulating layer and a conductive material on a whole surface of the substrate and etching the conductive material to form a data line, a scan line, a storage capacitor top electrode and an anode contact layer;
a third step, depositing a second insulating layer on a whole surface of the substrate, etching the second insulating layer to form a switching transistor block receptor, a driving transistor block receptor and an LED block receptor in a color element unit and forming eutectic layer in the each block receptor;
a fourth step, assembling a switching transistor block, a driving transistor block and an LED block into the each receptor by a fluidic self-assembly process;
a fifth step, depositing a third insulating layer on a whole surface of the substrate and etching the third insulating layer to form a color element defining layer for exposing the assembled LED block partially; and
a sixth step, depositing a transparent or a semitransparent conductive material and forming a cathode contact layer to connect electrically to the exposed LED block.
US13/095,2952010-05-072011-04-27LED display apparatus having active devices and fabrication method thereofActive2034-06-18US9111843B2 (en)

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