US20110256692A1 - Multiple precursor concentric delivery showerhead - Google Patents

Abstract

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
• This application claims benefit of U.S. Provisional Patent Application Ser. No. 61/324,271 (APPM/015324L), filed Apr. 14, 2010, which is herein incorporated by reference.
BACKGROUND OF THE INVENTION
• 1. Field of the Invention
• Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a showerhead design for use in metal organic chemical vapor deposition (MOCVD) and/or hydride vapor phase epitaxy (HVPE).
• 2. Description of the Related Art
• Group III-V films are finding greater importance in the development and fabrication of a variety of semiconductor devices, such as short wavelength light emitting diodes (LEDs), laser diodes (LDs), and electronic devices including high power, high frequency, high temperature transistors and integrated circuits. For example, short wavelength (e.g., blue/green to ultraviolet) LEDs are fabricated using the Group III-nitride semiconducting material gallium nitride (GaN). It has been observed that short wavelength LEDs fabricated using GaN can provide significantly greater efficiencies and longer operating lifetimes than short wavelength LEDs fabricated using non-nitride semiconducting materials, such as Group II-VI materials.
• One method that has been used for depositing Group III-nitrides, such as GaN, is metal organic chemical vapor deposition (MOCVD). This chemical vapor deposition method is generally performed in a reactor having a temperature controlled environment to assure the stability of a first precursor gas which contains at least one element from Group III, such as gallium (Ga). A second precursor gas, such as ammonia (NH₃), provides the nitrogen needed to form a Group III-nitride. The two precursor gases are injected into a processing zone within the reactor where they mix and move towards a heated substrate in the processing zone. A carrier gas may be used to assist in the transport of the precursor gases towards the substrate. The precursors react at the surface of the heated substrate to form a Group III-nitride layer, such as GaN, on the substrate surface. The quality of the film depends in part upon deposition uniformity which, in turn, depends upon uniform mixing of the precursors across the substrate.
• Multiple substrates may be arranged on a substrate carrier and each substrate may have a diameter ranging from 50 mm to 100 mm or larger. The uniform mixing of precursors over larger substrates and/or more substrates and larger deposition areas is desirable in order to increase yield and throughput. These factors are important since they directly affect the cost to produce an electronic device and, thus, a device manufacturer's competitiveness in the marketplace.
• Interaction of the precursor gases with the hot hardware components, which are often found in the processing zone of an LED or LD forming reactor, generally causes the precursor to break-down and deposit on these hot surfaces. Typically, the hot reactor surfaces are formed by radiation from the heat sources used to heat the substrates. The deposition of the precursor materials on the hot surfaces can be especially problematic when it occurs in or on the precursor distribution components, such as the showerhead. Deposition on the precursor distribution components affects the flow distribution uniformity over time. Therefore, there is a need for a gas distribution apparatus that prevents or reduces the likelihood that the MOCVD precursors, or HVPE precursors, are heated to a temperature that causes them to break down and affect the performance of the gas distribution device.
• Also, as the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high quality Group-III nitride films takes on greater importance. Therefore, there is a need for an improved deposition apparatus and process that can provide consistent film quality over larger substrates and larger deposition areas.
SUMMARY OF THE INVENTION
• The present invention generally provides improved methods and apparatus for depositing Group III-nitride films using MOCVD and/or HVPE processes.
• One embodiment of the present invention provides a showerhead apparatus comprising a first gas channel coupled to a first gas inlet, a second gas channel coupled to a second gas inlet, a plurality of first gas conduits fluidly coupling the first gas channel to an exit surface of the showerhead apparatus, and a plurality of second gas conduits fluidly coupling the second gas channel to the exit surface of the showerhead apparatus. The first gas channel is isolated from the second gas channel, and at least one of the first gas conduits is disposed within at least one of the second gas conduits.
• Another embodiment provides a substrate processing apparatus comprising a chamber body, a substrate support, and a showerhead apparatus, wherein a processing volume is defined by the chamber body, the substrate support, and the showerhead apparatus. The showerhead apparatus comprises a first gas channel coupled to a first gas inlet, a second gas channel coupled to a second gas inlet, a plurality of first gas conduits fluidly coupling the first gas channel to the processing volume, and a plurality of second gas conduits fluidly coupling the second gas channel to the processing volume. The first gas channel is isolated from the second gas channel, and at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.
• Yet another embodiment of the present invention provides a method of processing substrates comprising introducing a first gas into a processing volume of a processing chamber through a first gas inlet coupled to a first gas channel of a showerhead assembly and introducing a second gas into the processing volume of the processing chamber through a second gas inlet coupled to a second gas channel of the showerhead assembly. The first gas channel is isolated from the second gas channel, and the first gas is delivered into the processing volume through a plurality of first gas conduits and the second gas is delivered into the processing volume through a plurality of second gas conduits. At least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.
BRIEF DESCRIPTION OF THE DRAWINGS
• So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
• FIG. 1 is a schematic plan view illustrating one embodiment of a processing system for fabricating compound nitride semiconductor devices according to embodiments described herein.
• FIG. 2 is a schematic cross-sectional view of a metal-organic chemical vapor deposition (MOCVD) chamber for fabricating compound nitride semiconductor devices according to one embodiment of the present invention.
• FIG. 3 is an enlarged view of detail A shown inFIG. 2.
• FIG. 4A is a partial, schematic, bottom view of a multiple precursor showerhead showing a classic, one-to-one, square pattern of gas passages.
• FIG. 4B is a partial, schematic, bottom view of the showerhead fromFIG. 2 and according to one embodiment of the present invention.
• To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
• Embodiments of the present invention generally provide a method and apparatus that may be utilized for deposition of Group III-nitride films using MOCVD and/or HVPE hardware. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a cooling channel through which the plurality of concentric tube assemblies is disposed.
• FIG. 1 is a schematic plan view illustrating one embodiment of aprocessing system100 that comprises the one ormore MOCVD chambers102 for fabricating compound nitride semiconductor devices according to embodiments described herein. In one embodiment, theprocessing system100 is closed to atmosphere. Theprocessing system100 comprises atransfer chamber106, aMOCVD chamber102 coupled with thetransfer chamber106, aloadlock chamber108 coupled with thetransfer chamber106, abatch loadlock chamber109, for storing substrates, coupled with thetransfer chamber106, and aload station110, for loading substrates, coupled with theloadlock chamber108. Thetransfer chamber106 comprises a robot assembly (not shown) operable to pick up and transfer substrates between theloadlock chamber108, thebatch loadlock chamber109, and theMOCVD chamber102. Although asingle MOCVD chamber102 is shown, it should be understood that more than oneMOCVD chamber102 or additionally, combinations of one ormore MOCVD chambers102 with one or more Hydride Vapor Phase Epitaxial (HVPE) chambers may also be coupled with thetransfer chamber106. It should also be understood that although a cluster tool is shown, the embodiments described herein may be performed using linear track systems.
• In one embodiment, thetransfer chamber106 remains under vacuum during substrate transfer processes. The transfer chamber vacuum level may be adjusted to match the vacuum level of theMOCVD chamber102. For example, when transferring substrates from atransfer chamber106 into the MOCVD chamber102 (or vice versa), thetransfer chamber106 and theMOCVD chamber102 may be maintained at the same vacuum level. Then, when transferring substrates from thetransfer chamber106 to the load lock chamber108 (or vice versa) or the batch load lock chamber109 (or vice versa), the transfer chamber vacuum level may be adjusted to match the vacuum level of theloadlock chamber108 or batchload lock chamber109 even through the vacuum level of theloadlock chamber108 or batchload lock chamber109 and theMOCVD chamber102 may be different. Thus, the vacuum level of thetransfer chamber106 is adjustable. In certain embodiments, substrates are transferred in a high purity inert gas environment, such as, a high purity N₂environment. In one embodiment, substrates transferred in an environment having greater than 90% N₂. In certain embodiments, substrates are transferred in a high purity NH₃environment. In one embodiment, substrates are transferred in an environment having greater than 90% NH₃. In certain embodiments, substrates are transferred in a high purity H₂environment. In one embodiment, substrates are transferred in an environment having greater than 90% H₂.
• In theprocessing system100, the robot assembly (not shown) transfers asubstrate carrier plate112 loaded with substrates into thesingle MOCVD chamber102 to undergo deposition. In one embodiment, thesubstrate carrier plate112 may have a diameter ranging from about 200 mm to about 750 mm. Thesubstrate carrier plate112 may be formed from a variety of materials, including SiC or SiC-coated graphite. In one embodiment, thesubstrate carrier plate112 comprises a silicon carbide material. In one embodiment, thesubstrate carrier plate112 has a surface area of about 1,000 cm²or more, preferably 2,000 cm²or more, and more preferably 4,000 cm²or more. After some or all deposition steps have been completed, thesubstrate carrier plate112 is transferred from theMOCVD chamber102 back to theloadlock chamber108 via the transfer robot. In one embodiment, thesubstrate carrier plate112 is then transferred to theload station110. In another embodiment, thesubstrate carrier plate112 may be stored in either theloadlock chamber108 or the batchload lock chamber109 prior to further processing in theMOCVD chamber102. Oneexemplary processing system100 that may be adapted in accordance with embodiments of the present invention is described in U.S. patent application Ser. No. 12/023,572, filed Jan. 31, 2008, now published as US 2009-0194026, entitled PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES, which is hereby incorporated by reference in its entirety.
• In one embodiment, asystem controller160 controls activities and operating parameters of theprocessing system100. Thesystem controller160 includes a computer processor and a computer-readable memory coupled to the processor. The processor executes system control software, such as a computer program stored in memory. Exemplary aspects of theprocessing system100 and methods of use adaptable to embodiments of the present invention are further described in U.S. patent application Ser. No. 11/404,516, filed Apr. 14, 2006, now published as US 2007-024516, entitled EPITAXIAL GROWTH OF COMPOUND NITRIDE STRUCTURES, which is hereby incorporated by reference in its entirety.
• FIG. 2 is a schematic cross-sectional view of theMOCVD chamber102 according to embodiments of the present invention. TheMOCVD chamber102 comprises achamber body202, achemical delivery module203 for delivering precursor gases, carrier gases, cleaning gases, and/or purge gases, aremote plasma system226 with a plasma source, a susceptor orsubstrate support214, and avacuum system212. Thechamber body202 encloses aprocessing volume208. Ashowerhead assembly204 is disposed at one end of theprocessing volume208, and thesubstrate carrier plate112 is disposed at the other end of theprocessing volume208. Thesubstrate carrier plate112 may be disposed on thesubstrate support214. Thesubstrate support214 has z-lift capability for moving in a vertical direction, as shown byarrow215. In one embodiment, the z-lift capability may be used to move thesubstrate support214 upwardly, and closer to theshowerhead assembly204, and downwardly, and further away from theshowerhead assembly204. In one embodiment, the distance from the surface of theshowerhead assembly204 that is adjacent theprocessing volume208 to thesubstrate carrier plate112 during processing ranges from about 4 mm to about 41 mm. In certain embodiments, thesubstrate support214 comprises a heating element (e.g., a resistive heating element (not shown)) for controlling the temperature of thesubstrate support214 and consequently controlling the temperature of thesubstrate carrier plate112 andsubstrates240 positioned on thesubstrate carrier plate112 and thesubstrate support214.
• In one embodiment, theshowerhead assembly204 has a firstprocessing gas channel204A coupled with thechemical delivery module203 via a firstprocessing gas inlet259 for delivering a first precursor or first process gas mixture to theprocessing volume208. In one embodiment, thechemical delivery module203 is configured to deliver a metal organic precursor to the firstprocessing gas channel204A. In one example, the metal organic precursor comprises a suitable gallium (Ga) precursor (e.g., trimethyl gallium (“TMG”), triethyl gallium (TEG)), a suitable aluminum precursor (e.g., trimethyl aluminum (“TMA”)), or a suitable indium precursor (e.g., trimethyl indium (“TMI”)).
• In one embodiment, ablocker plate255 is positioned across the firstprocessing gas channel204A. Theblocker plate255 has a plurality oforifices257 disposed therethrough. In one embodiment, theblocker plate255 is positioned between the firstprocessing gas inlet259 and the firstprocessing gas channel204A for uniformly distributing gas received from thechemical delivery module203 into the firstprocessing gas channel204A.
• In one embodiment, theshowerhead assembly204 has a secondprocessing gas channel204B coupled with thechemical delivery module203 for delivering a second precursor or second process gas mixture to theprocessing volume208 via a secondprocessing gas inlet258. In one embodiment, thechemical delivery module203 is configured to deliver a suitable nitrogen containing processing gas, such as ammonia (NH₃) or other MOCVD or HVPE processing gas, to the secondprocessing gas channel204B. In one embodiment, the secondprocessing gas channel204B is separated from the firstprocessing gas channel204A by a firsthorizontal wall276 of theshowerhead204.
• Theshowerhead assembly204 may further include atemperature control channel204C coupled with aheat exchanging system270 for flowing a heat exchanging fluid through theshowerhead assembly204 to help regulate the temperature of theshowerhead assembly204. Suitable heat exchanging fluids include, but are not limited to, water, water-based ethylene glycol mixtures, a perfluoropolyether (e.g., Galden® fluid), oil-based thermal transfer fluids, or similar fluids. In one embodiment, the secondprocessing gas channel204B is separated from thetemperature control channel204C by a secondhorizontal wall277 of theshowerhead204. Thetemperature control channel204C may be separated from theprocessing volume208 by a thirdhorizontal wall278 of theshowerhead204.
• FIG. 3 is an enlarged view of detail A shown inFIG. 2. Referring toFIGS. 2 and 3, in one embodiment, the first precursor or first processing gas mixture, such as a metal organic precursor, is delivered from the firstprocessing gas channel204A through the secondprocessing gas channel204B and thetemperature control channel204C into theprocessing volume208 via a plurality ofinner gas conduits246. Theinner gas conduits246 may be cylindrical tubes located within aligned holes disposed through the firsthorizontal wall276, the secondhorizontal wall277, and the thirdhorizontal wall278 of theshowerhead204. In one embodiment, theinner gas conduits246 are each attached to the firsthorizontal wall276 of theshowerhead assembly204 by suitable means, such as brazing.
• In one embodiment, the second precursor or second processing gas mixture, such as a nitrogen precursor, is delivered from the secondprocessing gas channel204B through thetemperature control channel204C and into theprocessing volume208 via a plurality ofouter gas conduits245. Theouter gas conduits245 may be cylindrical tubes each located concentrically about a respectiveinner gas conduit246. Theouter gas conduits245 are located within the aligned holes disposed through the secondhorizontal wall277 and the thirdhorizontal wall278 of theshowerhead204. In one embodiment, theouter gas conduits245 are each attached to the secondhorizontal wall277 of theshowerhead assembly204 by suitable means, such as brazing.
• As previously presented, theMOCVD chamber102 may be used for deposition of Group III-nitride films. In one embodiment, the Group III-nitride films are deposited at a temperature exceeding about 550° C. In one embodiment, during processing, a cooling fluid is circulated through thetemperature control channel204C in order to cool theshowerhead assembly204, and in particular, to cool the metal organic precursor being delivered through theinner gas conduits246, which extend through the coolingchannel204C, to prevent decomposition of the metal organic precursor before it is introduced into theprocessing volume208. Additionally, it is believed that surrounding the metal organic precursor flowing through eachinner gas conduit246 with a flow of nitrogen-containing gas through the secondprocessing gas channel204B and eachouter conduit245, provides additional cooling and thermal insulation from the high processing temperatures within theprocessing volume208, in order to prevent decomposition of the metal organic precursor before it is introduced into theprocessing volume208.
• FIG. 4A is a partial, schematic, bottom view of amultiple precursor showerhead400 having a classic, one-to-one, square pattern of gas passages. Similar to embodiments of the present invention, theshowerhead400 has a first processing gas channel coupled to a processing region via afirst gas conduit402 and a second processing gas channel coupled to the processing region via asecond gas conduit404. In the depicted configuration, thefirst conduits402 and thesecond gas conduits404 are configured in a one-to-one square pattern. The configuration depicted inFIG. 4A results in a pattern in which each row of conduits has more of thesecond gas conduits404 than thefirst gas conduits402 or vice versa. Additionally, the one-to-one square pattern of first and second gas conduits (402 and404) results in a limited number of gas passages from each gas channel due to space constraints. The result is a less uniform than desirable distribution of gases across substrates positioned in the processing volume, resulting in less than desirable deposition uniformity.
• FIG. 4B is a partial, schematic, bottom view of theshowerhead assembly204 fromFIG. 2 and according to one embodiment of the present invention. As depicted, the concentric tube configuration comprising theouter gas conduit245 that delivers a second gas from the secondprocessing gas channel204B and theinner gas conduit246 that delivers a first gas from the firstprocessing gas channel204A are arranged in a much closer and more uniform pattern as compared to that shown inFIG. 4A. In one embodiment, the concentric tubes are configured in a hexagonal close packed arrangement. Such a configuration provides a significantly increased number of gas passages for both the first and second processing gases as compared to the configuration depicted inFIG. 4A. For instance, the configuration depicted inFIG. 4B has over twice as many gas passages for each processing gas as the configuration depicted inFIG. 4A for showerheads (204,400) having the same surface area exposed to theprocessing volume208. As a result of the configuration depicted inFIG. 4B, each of the first and second processing gases, delivered from the firstprocessing gas channel204A and the secondprocessing gas channel204B, is delivered more evenly across thesubstrates240 positioned in theprocessing volume208, resulting in significantly more deposition uniformity than the configuration depicted inFIG. 4A.
• Exemplary showerheads that may be adapted to practice embodiments described herein are described in U.S. patent application Ser. No. 11/873,132, filed Oct. 16, 2007, now published as US 2009-0098276, entitled MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD, U.S. patent application Ser. No. 11/873,141, filed Oct. 16, 2007, now published as US 2009-0095222, entitled MULTI-GAS SPIRAL CHANNEL SHOWERHEAD, and U.S. patent application Ser. No. 11/873,170, filed Oct. 16, 2007, now published as US 2009-0095221, entitled MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD, all of which are incorporated by reference in their entireties.
• Referring back toFIG. 2, alower dome219 is disposed at one end of alower volume210, and thesubstrate carrier plate112 is disposed at the other end of thelower volume210. Thesubstrate carrier plate112 is shown in an elevated, process position, but may be moved to a lower position where, for example, thesubstrates240 may be loaded or unloaded. Anexhaust ring220 may be disposed around the periphery of thesubstrate carrier plate112 to help prevent deposition from occurring in thelower volume210 and also help direct exhaust gases from thechamber102 to exhaustports209. Thelower dome219 may be made of transparent material, such as high-purity quartz, to allow light to pass through for radiant heating of thesubstrates240. The radiant heating may be provided by a plurality ofinner lamps221A andouter lamps221B disposed below thelower dome219.Reflectors266 may be used to help control exposure of thechamber102 to the radiant energy provided by the inner andouter lamps221A,221B. Additional rings of lamps (not shown) may also be used for finer temperature control of thesubstrates240.
• In certain embodiments of the present invention, a purge gas (e.g., a nitrogen containing gas) is delivered into thechamber102 from theshowerhead assembly204 through one or morepurge gas channels281 coupled to apurge gas source282. In this embodiment, the purge gas is distributed through a plurality oforifices284 about the periphery of theshowerhead204. The plurality oforifices284 may be configured in a circular pattern about the periphery of theshowerhead assembly204 and positioned distribute the purge gas about the periphery of thesubstrate carrier plate112 to prevent undesirable deposition on edges of thesubstrate carrier plate112, theshowerhead204, and other components of thechamber102, which result in particle formation and, ultimately contamination of thesubstrates240. The purge gas flows downwardly intomultiple exhaust ports209, which are disposed around anannular exhaust channel205. Anexhaust conduit206 connects theannular exhaust channel205 to avacuum system212, which includes avacuum pump207. The pressure of thechamber102 may be controlled using a valve system, which controls the rate at which the exhaust gases are drawn from theannular exhaust channel205.
• In other embodiments, purgegas tubes283 are disposed near the bottom of thechamber body102. In this configuration, the purge gas enters thelower volume210 of thechamber102 and flows upwardly past thesubstrate carrier plate112 andexhaust ring220 and into themultiple exhaust ports209. Other aspects of theMOCVD chamber102 are described in U.S. patent application Ser. No. 12/023,520, filed Jan. 31, 2008, published as US 2009-0194024, and titled CVD APPARATUS, which is herein incorporated by reference in its entirety.
• Thechemical delivery module203 supplies chemicals to theMOCVD chamber102. Reactive gases (e.g., first and second precursor gases), carrier gases, purge gases, and cleaning gases may be supplied from the chemical delivery system through supply lines and into thechamber102. In one embodiment, the gases are supplied through supply lines and into a gas mixing box where they are mixed together and delivered to theshowerhead assembly204. Generally supply lines for each of the gases include shut-off valves that can be used to automatically or manually shut-off the flow of the gas into its associated line, and mass flow controllers or other types of controllers that measure the flow of gas or liquid through the supply lines. Supply lines for each of the gases may also include concentration monitors for monitoring precursor concentrations and providing real time feedback. Backpressure regulators may be included to control precursor gas concentrations. Valve switching control may be used for quick and accurate valve switching capability. Moisture sensors in the gas lines measure water levels and can provide feedback to the system software which in turn can provide warnings/alerts to operators. The gas lines may also be heated to prevent precursors and cleaning gases from condensing in the supply lines. Depending upon the process used some of the sources may be liquid rather than gas. When liquid sources are used, the chemical delivery module includes a liquid injection system or other appropriate mechanism (e.g., a bubbler) to vaporize the liquid. Vapor from the liquids is then usually mixed with a carrier gas as would be understood by a person of skill in the art.
• Theremote plasma system226 can produce a plasma for selected applications, such as chamber cleaning or etching residue from a process substrate. Plasma species produced in theremote plasma system226 from precursors supplied via an input line are sent via aconduit204D for dispersion through theshowerhead assembly204 to theMOCVD chamber102. Precursor gases for a cleaning application may include chlorine containing gases, fluorine containing gases, iodine containing gases, bromine containing gases, nitrogen containing gases, and/or other reactive elements. Theremote plasma system226 may also be adapted to deposit CVD layers flowing appropriate deposition precursor gases intoremote plasma system226 during a layer deposition process. In one embodiment, theremote plasma system226 is used to deliver active chlorine species to theprocessing volume208 for cleaning the interior of theMOCVD chamber102.
• The temperature of the walls of theMOCVD chamber102 and surrounding structures, such as the exhaust passageway, may be further controlled by circulating a heat-exchange liquid through channels (not shown) in the walls of thechamber102. The heat-exchange liquid can be used to heat or cool thechamber body202 depending on the desired effect. For example, hot liquid may help maintain an even thermal gradient during a thermal deposition process, whereas a cool liquid may be used to remove heat from the system during an in-situ plasma process, or to limit formation of deposition products on the walls of the chamber. This heating, referred to as heating by the “heat exchanger”, beneficially reduces or eliminates condensation of undesirable reactant products and improves the elimination of volatile products of the process gases and other contaminants that might contaminate the process if they were to condense on the walls of cool vacuum passages and migrate back into the processing chamber during periods of no gas flow.
• In one embodiment, during processing, a first precursor gas flows from the firstprocessing gas channel204A in theshowerhead assembly204 and a second precursor gas flows from the secondprocessing gas channel204B formed in theshowerhead assembly204 towards the surface of thesubstrates240. As noted above, the first precursor gas and/or second precursor gas may comprise one or more precursor gases or process gasses as well as carrier gases and dopant gases which may be mixed with the precursor gases. The draw of theexhaust ports209 may affect gas flow so that the process gases flow substantially tangential to thesubstrates240 and may be uniformly distributed radially across the substrate deposition surfaces in a laminar flow. In one embodiment, theprocessing volume208 may be maintained at a pressure of about 760 Torr down to about 80 Torr.
• In summary, embodiments of the present invention include a showerhead assembly having concentric tube assemblies for separately delivering processing gases into a processing volume of a processing chamber. The concentric tube assemblies may be disposed in a hexagonal close packed arrangement for providing greater uniformity of the processing gases into the processing volume of the processing chamber. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.
• While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (20)

1. A showerhead apparatus, comprising:

a first gas channel coupled to a first gas inlet;

a second gas channel coupled to a second gas inlet, wherein the first gas channel is isolated from the second gas channel;

a temperature control channel coupled to a heat exchanging system configured to supply a heat exchanging fluid through the temperature control channel;

a plurality of first gas conduits extending through the temperature control channel and fluidly coupling the first gas channel to an exit surface of the showerhead apparatus; and

a plurality of second gas conduits extending through the temperature control channel and fluidly coupling the second gas channel to the exit surface of the showerhead apparatus, wherein at least one of the first gas conduits is disposed within at least one of the second gas conduits.

2. The apparatus ofclaim 1, wherein each of the first and second gas conduits forms a concentric tube assembly.

3. The apparatus ofclaim 2, wherein the concentric tube assemblies are configured in a hexagonal close packed arrangement.

4. The apparatus ofclaim 3, wherein the first gas channel is disposed above the second gas channel.

5. The apparatus ofclaim 4, wherein the second gas channel is disposed above the temperature control channel.

6. The apparatus ofclaim 2, further comprising a blocker plate positioned between the first gas inlet and the first gas channel.

7. The apparatus ofclaim 2, wherein the showerhead apparatus has a plurality of gas passages disposed about the periphery of the exit surface, wherein the plurality of gas passages are fluidly coupled to a purge gas inlet, and wherein the plurality of gas passages are isolated from the first gas channel, the second gas channel, and the temperature control.

8. The apparatus ofclaim 2, wherein the first gas inlet is coupled to a metal organic gas source, and wherein the second gas inlet is coupled to a nitrogen containing gas source.

9. A substrate processing apparatus, comprising:

a chamber body;

a substrate support; and

a showerhead apparatus, wherein a processing volume is defined by the chamber body, the substrate support, and the showerhead apparatus, and wherein the showerhead apparatus comprises:

a first gas channel coupled to a first gas inlet;

a second gas channel coupled to a second gas inlet, wherein the first gas channel is isolated from the second gas channel;

a temperature control channel coupled to a heat exchanging system configured to supply a heat exchanging fluid through the temperature control channel;

a plurality of first gas conduits extending through the temperature control channel and fluidly coupling the first gas channel to the processing volume; and

a plurality of second gas conduits extending through the temperature control channel and fluidly coupling the second gas channel to the processing volume, wherein at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.

10. The apparatus ofclaim 9, wherein each of the first and second gas conduits forms a concentric tube assembly.

11. The apparatus ofclaim 10, wherein the concentric tube assemblies are configured in a hexagonal close packed arrangement.

12. The apparatus ofclaim 9, wherein the showerhead further comprises a blocker plate disposed between the first gas inlet and the first gas channel.

13. The apparatus ofclaim 9, wherein the showerhead has a plurality of gas passages disposed about the periphery of a surface of the showerhead adjacent the processing volume, wherein the plurality of gas passages are fluidly coupled to a purge gas inlet, and wherein the plurality of gas passages are isolated from the first gas channel, the second gas channel, and the temperature control channel.

14. The apparatus ofclaim 9, wherein the first gas inlet is coupled to a metal organic gas source, and wherein the second gas inlet is coupled to a nitrogen containing gas source.

15. The apparatus ofclaim 9, wherein the second gas channel is disposed between the first gas channel and the temperature control channel.

16. A method of processing substrates, comprising:

introducing a first gas into a processing volume of a processing chamber through a first gas inlet coupled to a first gas channel of a showerhead assembly;

introducing a second gas into the processing volume of the processing chamber through a second gas inlet coupled to a second gas channel of the showerhead assembly, wherein the first gas channel is isolated from the second gas channel, wherein the first gas is delivered into the processing volume through a plurality of first plurality of second gas conduits, and wherein at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits; and

cooling the showerhead assembly by flowing a heat exchanging fluid through a temperature control channel disposed in the showerhead assembly, wherein the plurality of first and second gas conduits are disposed through the heat exchanging channel.

17. The method ofclaim 16, further comprising distributing the first gas across the first gas channel using a blocker plate disposed between the first gas inlet and the first gas channel.

18. The method ofclaim 16, further comprising introducing a purge gas about the perimeter of the processing volume through a plurality of gas passages disposed about the periphery of a surface of the showerhead assembly adjacent the processing volume.

19. The method ofclaim 16, wherein the first gas is a metal organic precursor and the second gas is a nitrogen containing gas.

20. The method ofclaim 19, wherein the metal organic precursor contains gallium and the nitrogen containing gas is ammonia.

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