US20110070681A1 - Interdigitated Back Contact Silicon Solar Cells With Separating Grooves - Google Patents

Abstract

Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.

Description

RELATED APPLICATIONS
• This application is a divisional of U.S. patent application Ser. No. 12/207,446, entitled “Interdigitated Back Contact Silicon Solar Cells With Laser Ablated Grooves” filed Sep. 9, 2008.
FIELD OF THE INVENTION
• This invention relates to the conversion of light irradiation to electrical energy using photovoltaic devices (solar cells), more particularly, to methods and tools for producing interdigitated back contact (IBC) solar cells, and to the IBC solar cells produced by these methods.
BACKGROUND OF THE INVENTION
• Solar cells are typically photovoltaic devices that convert sunlight directly into electricity. Solar cells typically include a semiconductor (e.g., silicon) wafer (substrate) that absorbs light irradiation (e.g., sunlight) in a way that creates free electrons, which in turn are caused to flow in the presence of a built-in field to create direct current (DC) power. The DC power generated by several solar cells may be collected on a grid placed on the cell. Solar cells are typically made using square or quasi-square silicon wafers that are doped to include one or more n-type doped regions, and one or more p-type doped regions. Such solar cells (also known as silicon wafer-based solar cells) are currently the dominant technology in the commercial production of solar cells, and are the main focus of the present invention.
• A desirable solar cell geometry, commonly referred to as the interdigitated back contact (IBC) cell, consists of a semiconductor wafer, such as silicon, and alternating lines (interdigitated stripes) of p-type and n-type doping. This cell architecture has the advantage that all of the electrical contacts to the p and n regions can be made to one side of the wafer. When the wafers are connected together into a module, the wiring is all done from one side. Device structure and fabrication means for this device have been described previously in co-owned and co-pending U.S. patent application Ser. No. 11/336,714 entitled “Solar Cell Production Using Non-Contact Patterning and Direct-Write Metallization”, which is incorporated herein by reference in its entirety. On May 12, 2008, SunPower Corp. (San Jose, Calif., USA) announced achieving 23.4% efficiency in a prototype IBC cell (see http://investors.sunpowercorp.com/releasedetail.cfm?ReleaseID=309613).
• A problem with IBC solar cells is that the conventional fabrication process used to produce IBC cells is quite complicated and, hence, more expensive as compared to the fabrication processes require to produce conventional ‘H-pattern’ solar cells. According to D. H. Neuhaus and A. Munzer, “Industrial Silicon Wafer Solar Cells” (Advances in Optoelectronics, vol. 2007, pp. 1-15, 2007), IBC cells require seventeen process steps (minimum) in order to complete the cell fabrication process, whereas conventional H-pattern solar cells require only nine steps.
• What is needed is a method for producing IBC-type solar cells that overcomes the deficiencies of conventional production methods by reducing the manufacturing costs and complexity, whereby IBC-type solar cells can be produced at substantially the same or lower cost as conventional H-pattern solar cells.
SUMMARY OF THE INVENTION
• The present invention is directed to a method for fabricating IBC solar cells that includes combining phosphorus and boron diffusion processes in which a screen-printable or spin-on-dopant boron source is deposited on the rear surface of a crystalline silicon substrate, and then phosphorus dopant is diffused such that the boron source acts as a diffusion barrier for phosphorus diffusion to prevent a cross doping of p+ and n+ diffusion regions. After the diffusion process, p+ and n+ diffusion regions are separated by grooves that are formed in the rear surface between the adjacent p+ and n+ diffusion regions, e.g., by laser ablation or chemical etching. The resulting fabrication process reduces the number of processing steps by approximately half (in comparison to conventional methods), and facilitates producing IBC solar cells at approximately the same (or lower) cost as currently required to produce ‘H-pattern’ solar cells.
BRIEF DESCRIPTION OF THE DRAWINGS
• These and other features, aspects and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, where:
• FIG. 1 is a perspective view showing a partially fabricated IBC solar cell according to an embodiment of the present invention;
• FIG. 2 is a cross-sectional side view showing the IBC solar cell ofFIG. 1 in a substantially completed state;
• FIG. 3 is a flow diagram depicting a method for fabricating IBC solar cells according to another embodiment of the present invention; and
• FIGS. 4(A),4(B),4(C),4(D),4(E),4(F),4(G),4(H),4(I),4(J) and4(K) are cross-sectional side views showing an IBC solar cell during various stages of the fabrication process ofFIG. 3.
DETAILED DESCRIPTION OF THE DRAWINGS
• The present invention relates to an improvement in photovoltaic devices (e.g., solar cells) that can be used, for example, to convert solar power into electrical energy. The following description is presented to enable one of ordinary skill in the art to make and use the invention as provided in the context of a particular application and its requirements. As used herein, directional terms such as “upper”, “lower”, “side”, “front”, “rear”, and “vertical” are intended to provide relative positions for purposes of description, and are not intended to designate an absolute frame of reference. Various modifications to the preferred embodiment will be apparent to those with skill in the art, and the general principles defined herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
• FIG. 1 is a partial perspective view andFIG. 2 is a cross-sectional side view showing a simplified IBCsolar cell100 according to an embodiment of the present invention. Those skilled in the art will recognize thatFIGS. 1 and 2 are simplified to show only a few diffusion lines and utilizes a distorted scale in order to highlight key features of the invention.
• Referring toFIG. 1, IBCsolar cell100 is formed on a semiconductor silicon (Si) wafer (substrate)101 having arear surface103 and anopposing front surface105.Substrate101 includes several diffusion regions that are indicated inFIG. 1 by shading, and unshaded portions ofsubstrate101 represent standard semiconductor Si. In one embodiment, the semiconductor Si is an n-type monocrystalline wafer with the resistivity between 0.1 and 2000 Ω·cm, but other type Si materials, such as p-type monocrystalline Si wafer, and n-type or p-type multicrystalline Si wafers, can also be used. Similar to conventional IBC solar cells, IBCsolar cell100 includes multiple interdigitated (parallel, spaced-apart) diffusion regions101-11 to101-14 and101-21 to101-23 that are formed throughrear surface103, and a continuous blanket (fourth) diffusion region101-3 that is formed throughfront surface105. A first set of diffusion regions101-11 to101-14 include a p-type dopant (e.g., boron) having a sheet resistance between 20 and 200 Ω/square, and a second set of diffusion regions101-21 to101-23 include a n-type dopant (e.g., phosphorus) having a sheet resistance between 20 and 200 Ω/square. The p-type dopant is diffused intosubstrate101 such that diffusion regions101-11 to101-14 have a nominal depth D1 between 0.1 and 5 μm, measured fromrear surface103 as indicated inFIG. 1, and has a width W1 in the range of 100 to 3000 μm. The n-type dopant is diffused intosubstrate101 such that diffusion regions101-21 to101-23 have a nominal depth D2 of 0.1 to 5 μm, measured fromrear surface103 as indicated inFIG. 1, and has a width W2 in the range of 10 to 500 μm. The diffusion regions are arranged such that each of the second set of diffusion regions101-21 to101-23 is disposed between a corresponding pair of diffusion regions of the first set. For example, a (third) n+ diffusion region101-22 is disposed between a (first) p+ diffusion region101-12 and a (second) n+ diffusion region101-13.
• According to an aspect of the present invention, a series of grooves107-1 to107-6 that are defined intorear surface103 between adjacent pairs of the diffusion regions. Grooves107-1 to107-6 represent elongated voids or openings inrear surface103 where substrate material is removed from between adjacent diffusion regions. For example, p+ diffusion region101-12 is separated from n+ diffusion region101-22 by (third) groove107-3, and p+ diffusion region101-13 is separated from n+ diffusion region101-22 by a groove107-4. Each groove107-1 to107-6 has a (third) depth D3 (e.g., preferably in the range of 0.2 to 10 μm, and more preferably in the range of 0.5 to 1.5 μm) extending intosubstrate101 fromrear surface103 that is greater than depths D1 and D2, whereby each adjacent pair of diffusion regions are physically separated from each other by a corresponding groove (e.g., diffusion regions101-12 and101-22 are separated by groove107-3).
• In accordance with another aspect of the present invention, grooves107-1 to107-6 are formed such that each diffusion region extends continuously between corresponding (vertical) side walls of two adjacent associated grooves. That is, each groove has a width W3 (i.e., preferably in the range of 1 to 50 μm, and more preferably in the range of 1 to 10 μm) defined by a distance between opposing vertical side walls (e.g., groove107-1 has a width W3 measured between side walls SW11 and SW12). Each diffusion region extends between associated side walls of adjacent grooves. For example, diffusion region101-12 extends between side wall SW42 of groove107-4 and side wall SW51 of groove107-5. As set forth below, grooves107-1 to107-6 are formed such that the entire region between side walls SW42 and SW51 to the depth D1 has the p-type dopant (e.g., boron) that forms diffusion region101-13.
• IBCsolar cell100 is shown in a substantially completed state inFIG. 2, wherein a surface passivation layer120-1 (e.g., one of SiN_X, SiC_x, SiO₂, SiO₂/SiN_x, or any other suitable dielectric materials) is formed overrear surface103, and an anti-reflection layer120-2 (e.g., SiN_x, TiO₂, or any other suitable dielectric materials) is formed overfront surface105, whereby diffusion regions101-11 to101-14,101-21 to101-23 and101-3 are protected by the respective layers. In accordance with another aspect of the invention, grooves107-1 to107-6 are formed such that portions of passivation layer120-1 are respectively disposed in each groove. Metal contacts130-11 to130-14 (e.g., AgAl) extend through passivation layer120-1 and are respectively connected to p+ diffusion regions101-11 and101-14, and metal contacts130-21 to130-23 (e.g., Ag) extend through passivation layer120-1 and are respectively connected to n+ diffusion regions101-21 and101-23.
• FIG. 3 is a flow diagram depicting a method for fabricating IBC solar cells according to another embodiment of the present invention.FIGS. 4(A) to 4(K) are simplified cross-sectional side views depicting the process ofFIG. 3.
• Referring to the top ofFIG. 3 (block205) and toFIG. 4(A),silicon wafer101 is wet processed to facilitate surface texturing and cleaning onrear surface103 andfront surface105.
• Next, referring to block210 ofFIG. 3 and toFIG. 4(B), a p-type dopant source (e.g., a printable Boron paste) is then deposited onrear surface103 in strips having a width in the range of 100 to 3000 μm, and more preferably in the range of 1000 to 1200 μm, and with a spacing in the range of 10 to 500 μm, and more preferably in the range of 200 to 300 μm. In one embodiment, the deposition of the p-type dopant source includes an extrusion process such as that described in co-owned and co-pending U.S. Patent Application No. 20080138456, entitled “Solar Cell Fabrication Using Extruded Dopant-Bearing Materials”, which is incorporated herein by reference in its entirety. In another embodiment, the deposition of the p-type dopant source includes a well known printing process, such as screen printing, pad printing, or jet printing. As indicated inFIG. 4(B), the resulting dopant material pads210-1 to210-4 are disposed over regions101-11A to101-14A, respectively, which at this point in time are substantially undoped. A drying process is then performed to dry the dopant material before diffusion.
• Referring to block220 ofFIG. 3 and toFIG. 4(C), diffusion of the boron intosubstrate101 is then performed by placingsubstrate101 into a preheated POCl₃furnace with the POCl₃source turned off, the furnace temperature to 900-950° C. to promote boron diffusion throughrear surface103, thereby forming diffusion regions101-11B to101-14B. In addition, in accordance with another aspect of the invention, the temperature during the boron diffusion process is selected such that the boron source material forms borosilicate glass layers210-1A to210-4A on rear surface104 over diffusion regions101-11B to101-14B. Note that, after the boron diffusion process, diffusion regions101-11B to101-14B are separated by substantially undoped regions101-21A to101-23A.
• Referring to block225 ofFIG. 3 and toFIG. 4(D), diffusion of phosphorus (n-type dopant) intosubstrate101 is then performed by cooling the POCl₃furnace from the boron diffusion temperature (i.e., 900-950° C.) to a temperature in the range of 850-900° C. and then turning on the POCl₃at a rate sufficient to achieve the phosphorus doping profile described herein. As indicated inFIG. 4(D), phosphorus (indicated by dashed line arrows) enterssubstrate101 throughfront surface105 and through exposed portions ofrear surface103, thereby forming n-type diffusion regions101-21B to101-23B and101-3. In accordance with an aspect of the present invention, borosilicate glass layers210-1A to210-4A serve as diffusion barriers during the phosphorus diffusion process to prevent diffusion of phosphorus into diffusion regions101-11B to101-14B. The inventors believe that by lowering the furnace temperature below 900° C., the borosilicate glass formed during boron diffusion can effectively serve as a barrier for phosphor diffusion. Note that, at the end of the phosphorus diffusion process shown inFIG. 4(D), each adjacent diffusion region abuts its adjacent diffusion region (e.g., diffusion region101-12B abuts diffusion region101-22B at interface IF1, and diffusion region101-22B abuts diffusion region101-13B at interface IF2).
• Referring to block230 ofFIG. 3 and toFIG. 4(E), grooves107-11 to107-16 are then formed inrear surface103 at each interface between adjacent diffusion regions, whereby each groove separates adjacent p+ and n+ diffusion region pairs. In accordance with an aspect of the present invention, the groove formation process is performed by laser ablation using such as a Q-switched solid state laser with a pulse energy in a range such as from about 10 μJ to about 300 μJ whereby grooves are formed having a depth of approximately in the range of 0.5 μm to 5 μm and a width in the range of 5 to 50 μm.
• Referring to block240 ofFIG. 3 and toFIG. 4(F), glass removal is then performed to remove remaining borosilicate glass pads120-11 to120-14 (shown inFIG. 4(E). In one embodiment, glass removal is performed using a wet chemical solution according to known techniques such as acid wet etching.
• As shown inFIG. 3 (blocks250 and255) and inFIGS. 4(G) and 4(H), a SiNx anti-reflection layer120-3 is then deposited in a PECVD reactor onfront surface105 over diffusion region101-3, and then a surface passivation layer (e.g., SiNx, SiCx, SiO2/SiNx) is deposited onrear surface103 according to known techniques such as PECVD or sputtering.
• Referring to the lower portion ofFIG. 3 and toFIGS. 4(I) and 4(J), AgAl paste portions130-11A to130-14A are respectively disposed on passivation layer120-1 over p+ diffusion regions101-11 to101-14 (block260 and FIG.4(I)), and Ag paste portions130-21A to130-23A are respectively disposed on passivation layer120-1 over n+ diffusion regions101-21 to101-23 (block265 andFIG. 4(J)). In an alternative embodiment, Ag paste is deposited on both p+ diffusion regions101-11 to101-14 and n+ diffusion regions101-21 to101-23 simultaneously using, for example, screen printing or extrusion, thereby eliminating one process step and reducing the entire fabrication process to ten steps. Subsequent to the paste deposition (seeblock270 ofFIG. 3 and FIG.4(K)),substrate101 is heated in a belt furnace to induce metallization, whereby metal contacts130-11 to130-14 are formed through passivation layer120-1 to p+ diffusion regions101-11 to101-14, and metal contacts130-21 to130-23 are formed through passivation layer120-1 to n+ diffusion regions101-21 to101-23.
• An advantage of the present invention is that IBC solar cell100 (FIG. 1) can be fabricated with only ten process steps, which is seven steps less than conventional IBC cell fabrication processes (i.e., as described in D. H. Neuhaus and A. Munzer, “Industrial Silicon Wafer Solar Cells” (Advances in Optoelectronics, vol. 2007, pp. 1-15, 2007)), and only one step more than the fabrication process typically used to produce conventional ‘H-pattern’ solar cells. In additions, because the present invention enables the formation of IBC cells, the cost of module assembly, which accounts for 30-35% of the total solar cell module cost, is reduced by up to 30% over conventional “H-pattern” cell assembly, indicating that a 9.0-10.5% reduction in total module cost is possible, according to E. V. Kerschaver and G. Beaucarne, “Back-contact Solar Cells: Review,” Progress in Photovoltaics: Research and Applications, vol. 14, pp. 107-123, 2006. Moreover, as the bow of wafers, which is usually caused by depositing Al paste and forming Al BSF (back surface field) on the entire rear surface in conventional “H-pattern” cells, can be greatly reduced or even eliminated for IBC cells, it is much easier to use thin Si wafers to produce IBC solar cells, which will also reduce the cost of Si materials. With these cost reductions both on module assembly and Si materials, the present invention (which just has minor process cost increase comparing to conventional “H-pattern” cells) reduces the final cost by up to about 20%, comparing to conventional cells even without efficiency improvement. Further, cost reduction to 30% are potentially realized because, in general, IBC cells have higher efficiency than the conventional “H-pattern” cells. The cost/efficiency analysis is provided in Table 1 (below).

• TABLE 1
  Cost and Efficiency Analysis

  		No
  	Base	process	High η	More η	PARC I	PARC II
  Si
  	100	100	100	100	75	75
  Process	100	0	100	100	120	120
  Module	100	100	100	100	70	70
  Eff. (%)	17.0	17.0	20.0	24.3	17.0	19.4
  Power (W)	4.14	4.14	4.87	5.91	4.14	4.73
  $/W	2.50	2.13	2.12	1.75	2.00	1.75
  Cost	NA	15%	15%	30%	20%	30%
  reduction

• As indicated in the leftmost column of Table 1, the baseline process is provided with costs of Si material, process, and module. Each cost accounts for 50%, 15%, and 35% of total module cost. The baseline process has 100% of Si material cost, 100% of processing cost, and 100% of module assembly cost, which result in total manufacturing cost of $2.50/W. Also, the cell/module efficiency is assumed to be 17%. The next cost analysis (second column from left) investigates the manufacturing cost without any processing. Therefore, the processing cost is 0%. Assuming that the module is able to produce an efficiency of 17%, the manufacturing cost is $2.13/W, which represents 15% reduction in cost. The primary target of the present invention is to achieve 30% cost reduction, so the “no process” option is not enough. The next cost analysis analyzes the impact of high-efficiency module, 20%. Assuming the production of 20%-efficient modules without adding any process compared to the baseline process, this option would produce a manufacturing cost of $2.12/W, which represents 15% reduction in cost. A 20% efficiency module does not produce enough cost reduction. Therefore, the next step is to analyze the effect of an even higher cell efficiency, 24.3%, on cost. This higher efficiency module gives the manufacturing cost of $1.75/W, which represents 30% reduction in cost. However, achieving 24.3% without adding any process compared to the baseline process is highly unlikely. The next step, PARC I, is the result of cost analysis using the proposed device fabrication technologies. Our proposed IBC cells will be able to accept thin Si wafers, 100-150 μm thick. Therefore, the cost of Si material is reduced to 75% of its original value. The cell processing requires boron diffusion, laser ablation, and alignment/registration processes. Therefore, the processing cost is assumed to be increased 20%. As discussed in the previous section, the cost of module assembly is reduced to 70% of its original value because the IBC structure provides a simpler module assembly process. Assuming that the cell/module efficiency is unchanged (17%), the manufacturing cost would be $2.00/W, which represents 20% reduction in cost. In order to achieve 30% cost reduction using the proposed IBC cells, the cell/module efficiency needs to be improved to 19.4% from 17.0%, and this is very realistic for IBC cells. Hence, as demonstrated in Table 1, the present invention facilitates the production of IBC solar cells having a final cost reduced by up to about 20% over conventional “H-pattern” cells (assuming the same efficiency), and having a cost reduction of 30% or more when the higher efficiency of the IBC solar cells is taken into account.
• Although the present invention has been described with respect to certain specific embodiments, it will be clear to those skilled in the art that the inventive features of the present invention are applicable to other embodiments as well, all of which are intended to fall within the scope of the present invention. For example, although the present invention is described above with reference to n-type Si substrates, it is possible to start with p-type Si substrate.
• In this case, the width of boron source would be in the range of about 10 to 500 μm, and more preferably in the range of 200-300 μm, and the spacing would be in the range of 100-3000 μm, and more preferably in the range of 1000-1200 μm. In addition, the present invention is not necessarily limited to the use of boron and phosphorus as dopants (unless specified in the claims), and is intended to extend to any other dopants exhibiting the diffusion barrier characteristics described herein, such as gallium (Ga) and arsenic (As). Moreover, the formation of grooves to separate the p+ and n+ diffusion regions is not necessarily limited to laser ablation, and may be extended to any other suitable method capable of generating the grooves described herein. For example, the grooves can also be made by using selective chemical etching methods through such as printing or extruding an etching paste on the rear surface of the substrate.

Claims (16)

1. A method of fabricating an IBC solar cell, the method comprising:

diffusing a first dopant into a rear surface of a semiconductor substrate such that first and second spaced-apart diffusion regions of the substrate have a first doping concentration and extends a first depth into the substrate from the rear surface, and are separated by a third diffusion region having a second doping concentration and extending a second depth into the substrate from the rear surface; and

forming a plurality of grooves in the rear surface of the semiconductor substrate such that the first diffusion region is separated from the third diffusion region by a first groove, and such that the second diffusion region is separated from the third diffusion region by a second groove.

2. The method according toclaim 1, wherein diffusing the first dopant comprises:

depositing spaced-apart pads of said first dopant onto the rear surface of substrate over said first and second diffusion regions; and

heating the substrate such that a portion of the first dopant diffuses into said first and second diffusion regions through said rear surface, wherein the second doping concentration of the third diffusion region maintains said second doping concentration during said heating.

3. The method according toclaim 2, wherein depositing the spaced-apart pads of said first dopant comprises one of extruding, screen printing, pad printing or jet printing said first dopant onto said rear surface.

4. The method according toclaim 3,

wherein said first dopant comprises boron, and

wherein heating comprises heating a temperature such that borosilicate glass is formed on said rear surface over said first and second diffusion regions.

5. The method according toclaim 4, further comprising, after forming said borosilicate glass, diffusing an n-type dopant into said third diffusion region such that said borosilicate glass prevents diffusion of said n-type dopant into said first and second diffusion regions.

6. The method according toclaim 5, wherein diffusing the n-type dopant comprises disposing said substrate in a furnace containing POCl₃at a temperature below 900° C.

7. The method according toclaim 2, further comprising, after said first dopant material is diffused into said first and second diffusion regions, diffusing a second dopant material into said third diffusion region such that said first dopant in said first and second diffusion regions serves as a diffusion barrier, whereby said third diffusion region acquires a third doping concentration determined by said second dopant material, and said first and second diffusion regions maintain said first doping concentration.

8. The method according toclaim 2, wherein forming said plurality of grooves on the rear surface of the substrate comprises selectively laser ablating the rear surface of the substrate.

9. The method according toclaim 2, wherein forming said plurality of grooves on the rear surface of the substrate comprises selectively chemical etching the rear surface of the substrate.

10. The method according toclaim 2, wherein each of the first and second grooves has a third depth extending into substrate from rear surface that is greater than either of the first depth and the second depth.

11. A method of fabricating an IBC solar cell, the method comprising:

diffusing a first dopant into a rear surface of a semiconductor substrate such that first and second spaced-apart diffusion regions of the substrate have a first doping concentration and extends a first depth into the substrate from the rear surface, and are separated by a third diffusion region having a second doping concentration and extending a second depth into the substrate from the rear surface;

removing an elongated first portion of the semiconductor substrate that extends a third depth into the rear surface and is disposed between the first diffusion region and the third diffusion region such that the first diffusion region is entirely separated from the third diffusion region by a first groove; and

removing an elongated second portion of the semiconductor substrate that extends said third depth into the rear surface and is disposed between the second diffusion region and the third diffusion region such that the second diffusion region is entirely separated from the third diffusion region by a second groove,

wherein the third depth is greater than either of the first depth and the second depth.

12. The method according toclaim 11, wherein removing said first portion and said second portion comprises chemical etching the rear surface of the substrate.

13. The method according toclaim 11, wherein removing said first portion and said second portion comprises laser ablating the rear surface of the substrate.

14. A method of fabricating an IBC solar cell, the method comprising:

diffusing a first dopant into a rear surface of a semiconductor substrate such that first and second spaced-apart diffusion regions of the substrate have a first doping concentration and extends a first depth into the substrate from the rear surface,

diffusing a second dopant into the rear surface of the semiconductor substrate such that a third diffusion region of the substrate has a second doping concentration and extends a second depth into the substrate from the rear surface, the third diffusion region being disposed between the first and second diffusion regions; and

removing an elongated first portion of the semiconductor substrate that extends a third depth into the rear surface and is disposed between the first diffusion region and the third diffusion region and an elongated second portion of the semiconductor substrate that extends said third depth into the rear surface and is disposed between the second diffusion region and the third diffusion region, said elongated first and second portions being formed such that the first diffusion region is entirely separated from the third diffusion region by a first groove, and such that the second diffusion region is entirely separated from the third diffusion region by a second groove,

wherein the third depth is greater than either of the first depth and the second depth.

15. The method according toclaim 14, wherein removing said first portion and said second portion comprises chemical etching the rear surface of the substrate.

16. The method according toclaim 14, wherein removing said first portion and said second portion comprises laser ablating the rear surface of the substrate.

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