US20110012256A1 - Semiconductor module - Google Patents

Abstract

A semiconductor module includes a semiconductor chip having a switching function, a resin portion that covers the chip, terminals, and a heat dissipation portion. The resin portion includes first and second surfaces, which are opposed to each other and expand generally parallel to an imaginary plane; and a substrate is located on a first surface-side of the resin portion. The terminals project from the resin portion in a direction of the imaginary plane and are soldered onto the substrate. The heat dissipation portion is disposed on a second surface-side of the resin portion to release heat generated in the chip. One of the terminals is connected to the heat dissipation portion such that heat is transmitted from the one of the terminals to the heat dissipation portion.

Description

CROSS REFERENCE TO RELATED APPLICATION
• This application is based on and incorporates herein by reference Japanese Patent Application No. 2009-165711 filed on Jul. 14, 2009.
BACKGROUND OF THE INVENTION
• 1. Field of the Invention
• The present invention relates to a semiconductor module having a switching function for rotating a motor.
• 2. Description of Related Art
• Motor control for a vehicle progresses further and further each year, and an electronic control unit (ECU) that is responsible for a motor and control of the motor is on the increase. On the other hand, to provide a comfortable space for a user of the vehicle, attempts are made to expand a space in a passenger compartment of the vehicle. Accordingly, it is a challenge to ensure a space for arrangement of the motor and ECU, and downsizing of the motor and ECU is becoming important.
• For example, an ECU, which is used for an electric power steering system (hereinafter referred to as an EPS), is disposed behind an engine compartment or instrument panel. However, because the ECU used for the EPS drives the motor with a high current (about 100A), heat generation of its switching element becomes great. For this reason, in order to downsize such an ECU, its structure for high heat dissipation is necessary. In this regard, a semiconductor module having a heat sink on an upper surface a semiconductor chip is proposed (see, for example, Japanese Patent No. 2685039).
• Nevertheless, a semiconductor module described in the above Patent No. 2685039 may not be necessarily adequate from the aspect of the heat dissipation.
SUMMARY OF THE INVENTION
• The present invention addresses at least one of the above disadvantages.
• According to the present invention, there is provided a semiconductor module adapted to be packaged on a substrate. The semiconductor module includes_a semiconductor chip, a resin portion, a plurality of terminals, and a heat dissipation portion. The semiconductor chip has a switching function. The resin portion is formed to cover the semiconductor chip. The resin portion includes a first surface and a second surface, which are opposed to each other and expand generally parallel to an imaginary plane. The substrate is located on a first surface-side of the resin portion. The plurality of terminals project from the resin portion in a direction of the imaginary plane and are soldered onto the substrate. The heat dissipation portion is disposed on a second surface-side of the resin portion to release heat generated in the semiconductor chip. One of the plurality of terminals is connected to the heat dissipation portion such that heat is transmitted from the one of the plurality of terminals to the heat dissipation portion.
BRIEF DESCRIPTION OF THE DRAWINGS
• The invention, together with additional objectives, features and advantages thereof, will be best understood from the following description, the appended claims and the accompanying drawings in which:
• FIG. 1 is a cross-sectional view roughly illustrating an electronic control unit (ECU) in accordance with a first embodiment of the invention;
• FIG. 2 is a perspective exploded view illustrating the ECU in accordance with the first embodiment;
• FIG. 3 is a diagram illustrating switching operation performed upon a motor in accordance with the first embodiment;
• FIG. 4A is a top view illustrating a semiconductor module in accordance with the first embodiment;
• FIG. 4B is a cross-sectional view taken along a line IVB-IVB inFIG. 4A and illustrating the semiconductor module in accordance with the first embodiment;
• FIG. 4C is a bottom view illustrating the semiconductor module in accordance with the first embodiment;
• FIG. 5A is a top view illustrating a semiconductor module in accordance with a second embodiment of the invention;
• FIG. 5B is a cross-sectional view taken along a line VB-VB inFIG. 5A and illustrating the semiconductor module in accordance with the second embodiment;
• FIG. 5C is a bottom view illustrating the semiconductor module in accordance with the second embodiment;
• FIG. 6A is a top view illustrating a semiconductor module in accordance with a third embodiment of the invention;
• FIG. 6B is a cross-sectional view taken along a line VIB-VIB inFIG. 6A and illustrating the semiconductor module in accordance with the third embodiment;
• FIG. 6C is a bottom view illustrating the semiconductor module in accordance with the third embodiment;
• FIG. 7A is a top view illustrating a semiconductor module in accordance with a fourth embodiment of the invention;
• FIG. 7B is a cross-sectional view taken along a line VIIB-VIIB inFIG. 7A and illustrating the semiconductor module in accordance with the fourth embodiment;
• FIG. 7C is a bottom view illustrating the semiconductor module in accordance with the fourth embodiment;
• FIG. 8A is a top view illustrating a semiconductor module in accordance with a fifth embodiment of the invention;
• FIG. 8B is a cross-sectional view taken along a line VIIIB-VIIIB inFIG. 8A and illustrating the semiconductor module in accordance with the fifth embodiment;
• FIG. 8C is a bottom view illustrating the semiconductor module in accordance with the fifth embodiment;
• FIG. 9A is a top view illustrating a semiconductor module in accordance with a sixth embodiment of the invention;
• FIG. 9B is a cross-sectional view taken along a line IXB-IXB inFIG. 9A and illustrating the semiconductor module in accordance with the sixth embodiment;
• FIG. 9C is a bottom view illustrating the semiconductor module in accordance with the sixth embodiment;
• FIG. 10A is a top view illustrating a semiconductor module in accordance with a seventh embodiment of the invention;
• FIG. 10B is a cross-sectional view taken along a line XB-XB inFIG. 10A and illustrating the semiconductor module in accordance with the seventh embodiment;
• FIG. 10C is a bottom view illustrating the semiconductor module in accordance with the seventh embodiment;
• FIG. 11A is a top view illustrating a semiconductor module in accordance with an eighth embodiment of the invention;
• FIG. 11B is a cross-sectional view taken along a line XIB-XIB inFIG. 11A and illustrating the semiconductor module in accordance with the eighth embodiment;
• FIG. 11C is a bottom view illustrating the semiconductor module in accordance with the eighth embodiment;
• FIG. 12A is a top view illustrating a semiconductor module in accordance with a ninth embodiment of the invention;
• FIG. 12B is a cross-sectional view taken along a line XIIB-XIIB inFIG. 12A and illustrating the semiconductor module in accordance with the ninth embodiment;
• FIG. 12C is a bottom view illustrating the semiconductor module in accordance with the ninth embodiment;
• FIG. 13A is a top view illustrating a modification to the semiconductor module in accordance with the ninth embodiment;
• FIG. 13B is a cross-sectional view taken along a line XIIIB-XIIIB inFIG. 13A and illustrating the modification to the semiconductor module in accordance with the ninth embodiment;
• FIG. 13C is a bottom view illustrating the modification to the semiconductor module in accordance with the ninth embodiment;
• FIG. 14A is a top view illustrating a semiconductor module in accordance with a tenth embodiment of the invention;
• FIG. 14B is a cross-sectional view taken along a line XIVB-XIVB inFIG. 14A and illustrating the semiconductor module in accordance with the tenth embodiment;
• FIG. 14C is a bottom view illustrating the semiconductor module in accordance with the tenth embodiment;
• FIG. 15A is a top view illustrating a semiconductor module in accordance with an eleventh embodiment of the invention;
• FIG. 15B is a cross-sectional view taken along a line XVB-XVB inFIG. 15A and illustrating the semiconductor module in accordance with the eleventh embodiment; and
• FIG. 15C is a bottom view illustrating the semiconductor module in accordance with the eleventh embodiment.
DETAILED DESCRIPTION OF THE INVENTION
• Embodiments of the invention will be described below.
First Embodiment
• An electronic control unit (ECU) of a first embodiment controls a motor used for an electric power steering system (EPS). This ECU is characterized in that the ECU includes a semiconductor module which serves as a switch for switching between turning on and off of an electric current supplied to the motor. Since a high current is supplied to the motor, the ECU has a problem of heat generation of the semiconductor module.
• As illustrated inFIG. 1, an exterior portion of an ECU1 includes aheat sink10 serving as a bottom portion of the ECU1, and acover30 covering asubstrate20 from above thesubstrate20.
• As illustrated inFIG. 2, theheat sink10 has a generally rectangular shape, and includes arecess11 near its one corner. Foursemiconductor modules40 are accommodated and disposed in therecess11.
• Similar to theheat sink10, thesubstrate20 has a rectangular shape, and the foursemiconductor modules40 are packaged on a part of an undersurface of thesubstrate20 that corresponds to therecess11 of theheat sink10. InFIG. 2, thesemiconductor modules40 are packaged on the undersurface of a rear corner of thesubstrate20. Aconnector51 is packaged on one side of thesubstrate20 to project toward a lateral side of thesubstrate20. InFIG. 2, theconnector51 is packaged on the one side of thesubstrate20 in the front of thesubstrate20 away from thesemiconductor modules40.
• As illustrated inFIG. 1, arelay52, acoil53, and an aluminumelectrolytic capacitor54 are arranged further on thesubstrate20 in theconnector51. Theseelectronic components52 to54 are not shown inFIG. 2.
• Thecover30 includes aheat dissipation portion31 that has a corrugated shape in cross section and that corresponds to the corner portion of thesubstrate20 on which thesemiconductor modules40 are packaged. Because of such a corrugated shape, a surface area of theheat dissipation portion31 is made large to contribute to heat dissipation. Furthermore, strain of thecover30 is also limited. Thecover30 includes anaccommodating portion32 for accommodating theelectronic components51 to54 on its connector51-side.
• As illustrated inFIG. 2, theheat sink10 and thecover30 are screwed together with thesubstrate20 between theheat sink10 and thecover30. When theheat sink10 and thecover30 are screwed together,heat dissipation gels61 are provided for therecess11 of theheat sink10. As a result, a surrounding area of thesemiconductor module40 is filled with theheat dissipation gel61. Likewise, aheat dissipation gel62 is also provided under theheat dissipation portion31 of thecover30. Accordingly, a space between theheat dissipation portion31 and thesubstrate20 is also filled with theheat dissipation gel62.
• Next, an electrical connection of thesemiconductor module40 will be described below with reference toFIG. 3, which is a diagram illustrating the electrical connection.
• Apower supply line92 for apower source91 is connected to therelay52 via the connector51 (not shown inFIG. 3). An electric current is supplied to thesemiconductor module40 via thecoil53, which is a choking coil for removing a noise of thepower source91.
• Connections of the foursemiconductor modules40 will be described below with reference toFIG. 3. To distinguish the foursemiconductor modules40, the description will be given using alphabetical letters A to D inFIG. 3, InFIG. 3, the semiconductor module40(A) and the semiconductor module40(C) are connected in series, and the semiconductor module40(B) and the semiconductor module40(D) are connected in series,
• The two semiconductor modules40(A),40(C), and the two semiconductor modules40(B),40(D) are connected in parallel. Arelay93 and amotor94 are disposed between a connecting point of the semiconductor modules40(A),40(C), and a connecting point of the semiconductor modules40(B),40(D).
• Ashunt resistance55 is provided on a ground side. The aluminumelectrolytic capacitor54 is connected between the power supply line and the ground in parallel with the power supply line and the ground. Surge voltage generated due to the turning on and off of thesemiconductor module40 is curbed by the aluminumelectrolytic capacitor54.
• As a result of the above-described configuration of the circuit ofFIG. 3, when the two semiconductor modules40(A),40(D) are turned on, and the two semiconductor modules40(B),40(C) are turned off, the electric current flows through the circuit in order of the semiconductor module40(A), therelay93, themotor94, and the semiconductor module40(D). Conversely, when the semiconductor modules40(B),40(C) are turned on, and the semiconductor modules40(A),40(D) are turned off, the electric current flows through the circuit in order of the semiconductor module40(B), themotor94, therelay93, and the semiconductor module40(C). Since themotor94 is a direct-current (DC) motor, themotor94 is rotated by the alternate turning on and off of thesemiconductor modules40 as above. A signal line from a pre-driver56 is connected to a gate of eachsemiconductor module40.
• Thesemiconductor module40 of the present embodiment will be described below in reference toFIGS. 4A to 4C.
• Thesemiconductor module40 includes asemiconductor chip41, aresin portion42 covering thechip41, aheat dissipation portion43 for releasing heat produced in thechip41, and threeterminals44,45,46 bonded to thechip41. Thesemiconductor chip41 is disposed such that its upper surface is in contact with theheat dissipation portion43. Accordingly, rapid conduction of heat from thesemiconductor chip41 to theheat dissipation portion43 is achieved.
• Theresin portion42 is formed such that theterminals44 to46 project from a lateral side of theresin portion42. The threeterminals44 to46 are, beginning at the top ofFIG. 4A, agate44, asource45, and adrain46. Theterminals44 to46 are bent downward, and the bottom of theresin portion42 is on the substrate20-side.
• As illustrated inFIG. 4C, theheat dissipation portion43 has a greater width than theresin portion42. More specifically, when a cross-sectional area of thesemiconductor module40 passing along a cross section perpendicular to upper and lower directions is considered, a cross-sectional area of theheat dissipation portion43 is larger than a cross-sectional area of theresin portion42. Theheat dissipation portion43 has a thickness of theresin portion42 or larger. Theheat dissipation portion43 includes twoelongated grooves47,48 on its upper surface. Thesource45 of theterminals44 to46 is connected to theheat dissipation portion43.
• As described in detail above, in thesemiconductor module40 of the present embodiment, thesource45 is connected to theheat dissipation portion43. Accordingly, even if thesource45 generates heat, rapid conduction of heat from thesource45 to theheat dissipation portion43 is realized. As a result, heat dissipation performance of themodule40 improves.
• In thesemiconductor module40, theheat dissipation portion43 has a greater width than the resin portion42 (seeFIG. 4C). Because a surface area of theheat dissipation portion43 is made larger in this manner, the heat dissipation performance of themodule40 improves.
• In thesemiconductor module40, the twoelongated grooves47,48 are formed on the upper surface of the heat dissipation portion43 (seeFIGS. 4A and 4B). Accordingly, the surface area of theheat dissipation portion43 is made large, so that the heat dissipation performance of themodule40 improves. In addition, because thegrooves47,48 serve as a resistance, displacement of theheat dissipation gel61 is limited.
• In thesemiconductor module40, the thickness of theheat dissipation portion43 in the upper and lower directions is equal to or greater than the thickness of the resin portion42 (seeFIG. 4B). Accordingly, heat capacity of theheat dissipation portion43 is made large, so that sufficient heat is released from thesemiconductor chip41.
• In the present embodiment, thesource45 is connected to theheat dissipation portion43. Alternatively, thedrain46, instead of or in addition to thesource45, may be connected to theheat dissipation portion43, This is because it is highly possible that thesource45 and thedrain46, through which the high current flows, generate heat. If both thesource45 and thedrain46 are connected to theheat dissipation portion43, two heat dissipation portions, which are insulated from each other, may be provided corresponding to both theterminals45,46 respectively. In this respect, the same holds for the following embodiments.
Second Embodiment
• Asemiconductor module400 of a second embodiment of the invention is illustrated inFIGS. 5A to 5C. Since configuration of an ECU is similar to the first embodiment, only configuration of thesemiconductor module400 will be described below.
• Thesemiconductor module400 includes asemiconductor chip401, aresin portion402 covering thechip401, aheat dissipation portion403 for releasing heat produced in thechip401, and threeterminals404,405,406 bonded to thechip401. Thesemiconductor chip401 is disposed such that its upper surface is in contact with theheat dissipation portion403. Accordingly, rapid conduction of heat from thesemiconductor chip401 to theheat dissipation portion403 is achieved.
• Theresin portion402 is formed such that theterminals404 to406 project from a lateral side of theresin portion402. The threeterminals404 to406 are, beginning at the top ofFIG. 5A, agate404, asource405, and adrain406. Theterminals404 to406 are bent downward, and the bottom of theresin portion402 is on a substrate-side.
• Similar to the first embodiment, thesource405 of theterminals404 to406 is connected to theheat dissipation portion403.
• In thesemiconductor module400 of the present embodiment, thesource405 is connected to theheat dissipation portion403. Accordingly, even if thesource405 generates heat, rapid conduction of heat from thesource405 to theheat dissipation portion403 is realized. As a result, heat dissipation performance of themodule400 improves.
Third Embodiment
• Asemiconductor module410 of a third embodiment of the invention is illustrated inFIGS. 6A to 6C. Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module410 will be described below.
• Thesemiconductor module410 includes asemiconductor chip411, aresin portion412 covering thechip411, aheat dissipation portion413 for releasing heat produced in thechip411, and threeterminals414,415,416 bonded to thechip411. Thesemiconductor chip411 is disposed such that its upper surface is in contact with theheat dissipation portion413. Accordingly, rapid conduction of heat from thesemiconductor chip411 to theheat dissipation portion413 is achieved.
• Theresin portion412 is formed such that theterminals414 to416 project from a lateral side of theresin portion412. The threeterminals414 to416 are, beginning at the top ofFIG. 6A, agate414, asource415, and adrain416. Theterminals414 to416 are bent downward, and the bottom of theresin portion412 is on a substrate-side.
• Similar to the above embodiments, thesource415 of theterminals414 to416 is connected to theheat dissipation portion413. As illustrated inFIG. 6C, theheat dissipation portion413 has a greater width than theresin portion412. More specifically, when a cross-sectional area of thesemiconductor module410 passing along a cross section perpendicular to upper and lower directions is considered, a cross-sectional area of theheat dissipation portion413 is larger than a cross-sectional area of theresin portion412.
• In thesemiconductor module410 of the present embodiment, thesource415 is connected to theheat dissipation portion413. Accordingly, even if thesource415 generates heat, rapid conduction of heat from thesource415 to theheat dissipation portion413 is realized. As a result, heat dissipation performance of themodule410 improves.
• In thesemiconductor module410, theheat dissipation portion413 has a greater width than the resin portion412 (seeFIG. 6C). Because a surface area of theheat dissipation portion413 is made larger in this manner, the heat dissipation performance of themodule410 improves.
Fourth Embodiment
• Asemiconductor module420 of a fourth embodiment of the invention is illustrated inFIGS. 7A to 7C. Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module420 will be described below.
• Thesemiconductor module420 includes asemiconductor chip421, aresin portion422 covering thechip421, aheat dissipation portion423 for releasing heat produced in thechip421, and threeterminals424,425,426 bonded to thechip421. Thesemiconductor chip421 is disposed such that its upper surface is in contact with theheat dissipation portion423. Accordingly, rapid conduction of heat from thesemiconductor chip421 to theheat dissipation portion423 is achieved.
• Theresin portion422 is formed such that theterminals424 to426 project from a lateral side of theresin portion422. The threeterminals424 to426 are, beginning at the top ofFIG. 7A, agate424, asource425, and adrain426. Theterminals424 to426 are bent downward, and the bottom of theresin portion422 is on a substrate-side.
• Similar to the above embodiments, thesource425 of theterminals424 to426 is connected to theheat dissipation portion423. Theheat dissipation portion423 has a thickness of theresin portion422 or larger in upper and lower directions.
• In thesemiconductor module420 of the present embodiment, thesource425 is connected to theheat dissipation portion423. Accordingly, even if thesource425 generates heat, rapid conduction of heat from thesource425 to theheat dissipation portion423 is realized. As a result, heat dissipation performance of themodule420 improves.
• In thesemiconductor module420, the thickness of theheat dissipation portion423 in the upper and lower directions is equal to or greater than the thickness of the resin portion422 (seeFIG. 7B). Accordingly, heat capacity of theheat dissipation portion423 is made large, so that sufficient heat is released from thesemiconductor chip421.
Fifth Embodiment
• Asemiconductor module430 of a fifth embodiment of the invention is illustrated inFIGS. 8A to 8C Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module430 will be described below.
• Thesemiconductor module430 includes asemiconductor chip431, aresin portion432 covering thechip431, aheat dissipation portion433 for releasing heat produced in thechip431, and threeterminals434,435,436 bonded to thechip431. Thesemiconductor chip431 is disposed such that its upper surface is in contact with theheat dissipation portion433. Accordingly, rapid conduction of heat from thesemiconductor chip431 to theheat dissipation portion433 is achieved.
• Theresin portion432 is formed such that theterminals434 to436 project from a lateral side of theresin portion432. The threeterminals434 to436 are, beginning at the top ofFIG. 8A, agate434, asource435, and adrain436. Theterminals434 to436 are bent downward, and the bottom of theresin portion432 is on a substrate-side.
• Similar to the above embodiments, thesource435 of theterminals434 to436 is connected to theheat dissipation portion433. As illustrated inFIG. 8C, theheat dissipation portion433 has a greater width than theresin portion432. More specifically, when a cross-sectional area of thesemiconductor module430 passing along a cross section perpendicular to upper and lower directions is considered, a cross-sectional area of theheat dissipation portion433 is larger than a cross-sectional area of theresin portion432. Theheat dissipation portion433 has a thickness of theresin portion432 or larger in upper and lower directions.
• In thesemiconductor module430 of the present embodiment, thesource435 is connected to theheat dissipation portion433. Accordingly, even if thesource435 generates heat, rapid conduction of heat from thesource435 to theheat dissipation portion433 is realized. As a result, heat dissipation performance of themodule430 improves.
• In thesemiconductor module430, theheat dissipation portion433 has a greater width than the resin portion432 (seeFIG. 8C). Because a surface area of theheat dissipation portion433 is made larger in this manner, the heat dissipation performance of themodule430 improves.
• In thesemiconductor module430, the thickness of theheat dissipation portion433 in the upper and lower directions is equal to or greater than the thickness of the resin portion432 (seeFIG. 8B). Accordingly, heat capacity of theheat dissipation portion433 is made large, so that sufficient heat is released from thesemiconductor chip431.
Sixth Embodiment
• Asemiconductor module440 of a sixth embodiment of the invention is illustrated inFIGS. 9A to 9C. Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module440 will be described below.
• Thesemiconductor module440 includes asemiconductor chip441, aresin portion442 covering thechip441, aheat dissipation portion443 for releasing heat produced in thechip441, and threeterminals444,445,446 bonded to thechip441. Thesemiconductor chip441 is disposed such that its upper surface is in contact with theheat dissipation portion443. Accordingly, rapid conduction of heat from thesemiconductor chip441 to theheat dissipation portion443 is achieved.
• Theresin portion442 is formed such that theterminals444 to446 project from a lateral side of theresin portion442. The threeterminals444 to446 are, beginning at the top ofFIG. 9A, agate444, asource445, and adrain446. Theterminals444 to446 are bent downward, and the bottom of theresin portion442 is on a substrate-side.
• As illustrated inFIG. 9C, theheat dissipation portion443 has a greater width than theresin portion442. More specifically, when a cross-sectional area of thesemiconductor module440 passing along a cross section perpendicular to upper and lower directions is considered, a cross-sectional area of theheat dissipation portion443 is larger than a cross-sectional area of theresin portion442. Theheat dissipation portion443 has a thickness of theresin portion442 or larger. Theheat dissipation portion443 includes twoelongated grooves447,448 on its upper surface. Thesource445 of theterminals444 to446 is connected to theheat dissipation portion443.
• Particularly, thesemiconductor module440 includes aheat conduction portion449 on an undersurface of theresin portion442. Theheat conduction portion449 is formed from high thermal conductive resin. The high thermal conductive resin is made, for example, by mixing filler of metal or inorganic ceramics that has high thermal conductivity into resin. Alternatively, a resin having high thermal conductivity may be employed as the resin into which the filler is mixed. As such a resin, for example, a resin using 4-(oxiranylmethoxy) benzoic acid-4,4′[1,8-octanediylbis (oxy)]bisphenol ester as epoxy resin monomer, and a resin using 4,4′-diaminodiphenylmethane as an epoxy resin curing agent, may be employed.
• In thesemiconductor module440 of the present embodiment, thesource445 is connected to theheat dissipation portion443. Accordingly, even if thesource445 generates heat, rapid conduction of heat from thesource445 to theheat dissipation portion443 is realized. As a result, heat dissipation performance of themodule440 improves.
• In thesemiconductor module440, theheat dissipation portion443 has a greater width than the resin portion442 (seeFIG. 9B). Because a surface area of theheat dissipation portion443 is made larger in this manner, the heat dissipation performance of themodule440 improves.
• In thesemiconductor module440, the twoelongated grooves447,448 are formed on the upper surface of the heat dissipation portion443 (seeFIGS. 9A and 9B). Accordingly, the surface area of theheat dissipation portion443 is made large, so that the heat dissipation performance of themodule440 improves. In addition, because thegrooves447,448 serve as a resistance, displacement of aheat dissipation gel61 is limited.
• In thesemiconductor module440, the thickness of theheat dissipation portion443 in the upper and lower directions is equal to or greater than the thickness of the resin portion442 (seeFIG. 9B), Accordingly, heat capacity of theheat dissipation portion443 is made large, so that sufficient heat is released from thesemiconductor chip441.
• Thesemiconductor module440 includes theheat conduction portion449 on the undersurface of theresin portion442. Accordingly, heat is released toward the substrate-side as well, so that the heat dissipation performance of themodule440 further improves.
• Additionally, needless to say, theheat dissipation portion443 can also have a similar structure to theheat dissipation portions403,413,423,433 of the above embodiments. In this respect, the same holds for the following embodiments.
Seventh Embodiment
• Asemiconductor module450 of a seventh embodiment of the invention is illustrated inFIGS. 10A to 10C. Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module450 will be described below.
• Thesemiconductor module450 includes asemiconductor chip451, aresin portion452 covering thechip451, aheat dissipation portion453 for releasing heat produced in thechip451, and threeterminals454,455,456 bonded to thechip451. Theheat dissipation portion453 includeselongated grooves457,458, and aheat conduction portion459 is provided on an undersurface of theresin portion452. The above-described configurations of themodule450 are similar to thesemiconductor module440 of the sixth embodiment.
• Particularly, as illustrated inFIGS. 10A to 10C, thesemiconductor module450 includes a lateralheat dissipation portion45A that projects from theresin portion452 toward the lateral side. The lateralheat dissipation portion45A is made of a metallic material, and has a greater width than theterminals454 to456. The lateralheat dissipation portion45A is connected to theheat dissipation portion453. Theheat dissipation portion45A is bent downward to be soldered onto a substrate.
• By means of thesemiconductor module450 as well, a similar effect to thesemiconductor module440 of the sixth embodiment is produced. In addition to this, thesemiconductor module450 includes the lateralheat dissipation portion45A. Accordingly, heat dissipation performance of themodule450 further improves.
Eighth Embodiment
• Asemiconductor module460 of an eighth embodiment of the invention is illustrated inFIGS. 11A to 11C, Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module460 will be described below.
• Thesemiconductor module460 includes asemiconductor chip461, aresin portion462 covering thechip461, aheat dissipation portion463 for releasing heat produced in thechip461, and threeterminals464,465,466 bonded to thechip461. Theheat dissipation portion463 includeselongated grooves467,468, and aheat conduction portion469 is provided on an undersurface of theresin portion462. The above-described configurations of themodule460 are similar to thesemiconductor module440 of the sixth embodiment.
• Particularly, in thesemiconductor module460, theheat conduction portion469 is made of a metallic material.
• By means of thesemiconductor module460 as well, a similar effect to thesemiconductor module440 of the sixth embodiment is produced.
Ninth Embodiment
• Asemiconductor module470 of a ninth embodiment of the invention is illustrated inFIGS. 12A to 12C. Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module470 will be described below.
• Thesemiconductor module470 includes asemiconductor chip471, aresin portion472 covering thechip471, aheat dissipation portion473 for releasing heat produced in thechip471, and threeterminals474,475,476 bonded to thechip471.
• Theheat dissipation portion473 includeselongated grooves477,478, and aheat conduction portion479 is provided on an undersurface of theresin portion472. The above-described configurations of themodule470 are similar to thesemiconductor module460 of the sixth embodiment.
• Particularly, as illustrated inFIGS. 12A to 12C, thesemiconductor module470 includes a lateralheat dissipation portion47A that projects from theresin portion472 toward the lateral side. The lateralheat dissipation portion47A is made of a metallic material, and has a greater width than theterminals474 to476. The lateralheat dissipation portion47A is connected to theheat dissipation portion473 inside theheat dissipation portion473. Theheat dissipation portion47A is bent downward to be soldered onto a substrate.
• By means of thesemiconductor module470 as well, a similar effect to thesemiconductor module460 of the sixth embodiment is produced. In addition to this, thesemiconductor module470 includes the lateralheat dissipation portion47A. Accordingly, heat dissipation performance of themodule470 further improves.
• In addition, as illustrated inFIGS. 13A to 13C, themodule470 may include a metalheat conduction portion47B having a greater width. Accordingly, a surface area of theheat conduction portion47B is made larger than theheat conduction portion479, so that the heat dissipation performance of themodule470 further improves.
Tenth Embodiment
• Asemiconductor module480 of a tenth embodiment of the invention is illustrated inFIGS. 14A to 14C Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module480 will be described below.
• Thesemiconductor module480 includes asemiconductor chip481, aresin portion482 covering thechip481, aheat dissipation portion483 for releasing heat produced in thechip481, and threeterminals484,485,486 bonded to thechip481. Theheat dissipation portion483 includeselongated grooves487,488. The above-described configurations of themodule480 are similar to thesemiconductor module440 of the sixth embodiment.
• Particularly, thesemiconductor module480 includes aheat insulation portion48C on an undersurface of theresin portion482. Low thermal conductive resin may be used for theheat insulation portion48C. For example, resin, such as polyphenylene sulfide (PPS), polyphenylene ether (PPE), melamine resin, polycarbonate (PC), polyethersulfone (PES), polysulfone (PSF), polyetherimide, polyimide, polyimide, polyamidoimide (PAI), acrylonitrile-styrene resin (AS resin), polypropylene (PP), polyethylene (PE), polymethylpentene (PMP), polyarylate (PAR), polyether ether ketone (PEEK), or polyetherketone (PEK), may be used for theheat insulation portion48C.
• By means of thesemiconductor module480 as well, a similar effect to thesemiconductor module440 of the sixth embodiment is produced. In addition, thesemiconductor module480 includes theheat insulation portion48C on the undersurface of theresin portion482. Accordingly, even if, for example, thesemiconductor modules480 are arranged adjacent to each other, the influence of heat transmitted via a substrate upon themodules480 is inhibited.
Eleventh Embodiment
• Asemiconductor module490 of an eleventh embodiment of the invention is illustrated inFIGS. 15A to 15C Since configuration of an ECU is similar to the above embodiments, only configuration of thesemiconductor module490 will be described below.
• Thesemiconductor module490 includes asemiconductor chip491, aresin portion492 covering thechip491, aheat dissipation portion493 for releasing heat produced in thechip491, and threeterminals494,495,496 bonded to thechip491.
• Theheat dissipation portion493 includeselongated grooves497,498. Thesemiconductor module490 includes aheat insulation portion49C on an undersurface of theresin portion492. The above-described configurations of themodule490 are similar to thesemiconductor module480 of the sixth embodiment,
• Particularly, as illustrated inFIGS. 15A to 15C, thesemiconductor module490 includes a lateralheat dissipation portion49A that projects from theresin portion492 toward the lateral side. The lateralheat dissipation portion49A is made of a metallic material, and has a greater width than theterminals494 to496. The lateralheat dissipation portion49A is connected to theheat dissipation portion493. Theheat dissipation portion49A is bent downward to be soldered onto a substrate.
• By means of thesemiconductor module490 as well, a similar effect to thesemiconductor module480 of the sixth embodiment is produced. In addition to this, thesemiconductor module490 includes the lateralheat dissipation portion49A. Accordingly, heat dissipation performance of themodule490 further improves. When the lateralheat dissipation portion49A is soldered onto the substrate, a heat dissipation path that does not influence theother semiconductor modules490 may be formed on the substrate.
• In summary, asemiconductor module40,400,410,420,430,440,450,460,470,480, or490 according to the above embodiments of the invention is adapted to be packaged on asubstrate20. The semiconductor module includes asemiconductor chip41,401,411,421,431,441,451,461,471,481, or491, aresin portion42,402,412,422,432,442,452,462,472,482, or492, a plurality of terminals44-46;404-406;414-416;424-426;434-436;444-446;454-456;464-466;474-476;484-486; or494-496, and aheat dissipation portion43,403,413,423,433,443,453,463,473,483, or493, Thesemiconductor chip41,401,411,421,431,441,451,461,471,481, or491 has a switching function, Theresin portion42,402,412,422,432,442,452,462,472,482, or492 is formed to cover the semiconductor chip. The resin portion includes a first surface and a second surface, which are opposed to each other and expand generally parallel to an imaginary plane. Thesubstrate20 is located on a first surface-side of the resin portion. The plurality of terminals44-46;404-406;414-416;424-426;434-436;444-446;454-456;464-466;474-476;484-486; or494-496 project from the resin portion in a direction of the imaginary plane and are soldered onto thesubstrate20. Theheat dissipation portion43,403,413,423,433,443,453,463,473,483, or493 is disposed on a second surface-side of the resin portion to release heat generated in the semiconductor chip. One45,405,415,425,435,445,455,465,475,485, or495 of the plurality of terminals is connected to the heat dissipation portion such that heat is transmitted from the one of the plurality of terminals to the heat dissipation portion.
• When supplying a high current using thesemiconductor module40,400,410,420,430,440,450,460,470,480, or490, the high current flows through aparticular terminal45,405,415,425,435,445,455,465,475,485, or495. Therefore, not only thesemiconductor chip41,401,411,421,431,441,451,461,471,481, or491, but also theabove terminal45,405,415,425,435,445,455,465,475,485, or495 generates heat. Accordingly, in the embodiments of the invention, theparticular terminal45,405,415,425,435,445,455,465,475,485, or495 is connected to theheat dissipation portion43,403,413,423,433,443,453,463,473,483, or493. As a result, the heat produced in theparticular terminal45,405,415,425,435,445,455,465,475,485, or495 is also transmitted to theheat dissipation portion43,403,413,423,433,443,453,463,473,483, or493. Because of this, heat dissipation performance of thesemiconductor module40,400,410,420,430,440,450,460,470,480, or490 is improved as much as possible.
• If there are more than one particular terminal, more than one heat dissipation portion, which are insulated from each other, may be provided corresponding to the more than one particular terminal, respectively.
• An area of a section of theheat dissipation portion43,413,433,443,453,463,473,483, or493 parallel to the imaginary plane may be equal to or larger than an area of a section of theresin portion42,412,432,442,452,462,472,482, or492 parallel to the imaginary plane.
• Accordingly, the surface area of theheat dissipation portion43,413,433,443,453,463,473,483, or493 is made larger, so that even higher heat dissipation performance of thesemiconductor module40,410,430,440,450,460,470,480, or490 is shown.
• A thickness of theheat dissipation portion43,423,433,443,453,463,473,483, or493 in a direction perpendicular to the imaginary plane may be equal to or larger than a thickness of theresin portion42,422,432,442,452,462,472,482, or492 in the direction perpendicular to the imaginary plane.
• Accordingly, heat capacity of theheat dissipation portion43,423,433,443,453,463,473,483, or493 is made larger, so that sufficient heat transferred from thesemiconductor chip41,421,431,441,451,461,471,481, or491 is released.
• Theheat dissipation portion43,443,453,463,473,483, or493 may include anelongated groove47,48;447,448;457,458;467,468;477,478;487,488; or497,498 on a surface of the heat dissipation portion, which is on an opposite side of the heat dissipation portion from the second surface-side.
• Accordingly, the surface area of theheat dissipation portion43,443,453,463,473,483, or493 is made larger, so that even higher heat dissipation performance of thesemiconductor module40,440,450,460,470,480, or490 is shown. When theheat dissipation portion43,443,453,463,473,483, or493 is covered with, for example, theheat dissipation gel61, movement of thegel61 is limited byelongated grooves47,48;447,448;457,458;467,468;477,478;487,488; or497,498.
• Thus far, the configuration of the semiconductor module for releasing heat in the opposite direction from thesubstrate20 has been described. Additionally, theresin portion442,452,462, or472 may include aheat conduction portion449,459,469,479, or47B on the first surface-side of the resin portion; and the heat conduction portion releases heat toward thesubstrate20. In this case, theheat conduction portion449,459,469,479, or47B may be formed from thermal conductive resin. Alternatively, theheat conduction portion449,459,469,479, or47B may be formed from a metallic material. Accordingly, heat is released in the direction of thesubstrate20 as well, so that the heat dissipation performance of thesemiconductor module440,450,460, or470 further improves.
• Provided that the semiconductor modules are arranged adjacent to each other, for example, when heat is transmitted to a pattern of thesubstrate20 by releasing heat toward thesubstrate20, the semiconductor module may be influenced by the heat from the other modules. Accordingly, theresin portion482, or492 may include aheat insulation portion48C or49C on the first surface-side of the resin portion; and the heat insulation portion limits conduction of heat toward thesubstrate20. As a result, the influence of the heat transmitted from thesubstrate20 upon the semiconductor modules is restricted.
• In addition to the upper surface side and the lower surface side of the resin portion, theresin portion452,472, or492 may include a lateralheat dissipation portion45A,47A, or49A, which projects from a lateral side of the resin portion that is located between the first surface and the second surface of the resin portion. For example, a plate-like metal member, which is connected to thesemiconductor chip451,471, or491, may be formed to project from a lateral side of theresin portion452,472, or492. Accordingly, heat dissipation performance of thesemiconductor module450,470, or490 further improves.
• Additional advantages and modifications will readily occur to those skilled in the art. The invention in its broader terms is therefore not limited to the specific details, representative apparatus, and illustrative examples shown and described.

Claims (9)

1. A semiconductor module adapted to be packaged on a substrate, the semiconductor module comprising:

a semiconductor chip that has a switching function;

a resin portion that is formed to cover the semiconductor chip, wherein:

the resin portion includes a first surface and a second surface, which are opposed to each other and expand generally parallel to an imaginary plane; and

the substrate is located on a first surface-side of the resin portion;

a plurality of terminals that project from the resin portion in a direction of the imaginary plane and are soldered onto the substrate; and

a heat dissipation portion that is disposed on a second surface-side of the resin portion to release heat generated in the semiconductor chip, wherein one of the plurality of terminals is connected to the heat dissipation portion such that heat is transmitted from the one of the plurality of terminals to the heat dissipation portion.

2. The semiconductor module according toclaim 1, wherein an area of a section of the heat dissipation portion parallel to the imaginary plane is equal to or larger than an area of a section of the resin portion parallel to the imaginary plane.

3. The semiconductor module according toclaim 1, wherein a thickness of the heat dissipation portion in a direction perpendicular to the imaginary plane is equal to or larger than a thickness of the resin portion in the direction perpendicular to the imaginary plane.

4. The semiconductor module according toclaim 1, wherein the heat dissipation portion includes an elongated groove on a surface of the heat dissipation portion, which is on an opposite side of the heat dissipation portion from the second surface-side.

5. The semiconductor module according toclaim 1, wherein:

the resin portion includes a heat conduction portion on the first surface-side of the resin portion; and

the heat conduction portion releases heat toward the substrate.

6. The semiconductor module according toclaim 5, wherein the heat conduction portion is formed from thermal conductive resin.

7. The semiconductor module according toclaim 5, wherein the heat conduction portion is formed from a metallic material.

8. The semiconductor module according toclaim 1, wherein:

the resin portion includes a heat insulation portion on the first surface-side of the resin portion; and

the heat insulation portion limits conduction of heat toward the substrate.

9. The semiconductor module according toclaim 1, wherein the resin portion includes a lateral heat dissipation portion, which projects from a lateral side of the resin portion that is located between the first surface and the second surface of the resin portion.

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