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US20100203234A1 - Shape memory alloy actuators - Google Patents

Shape memory alloy actuators
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Publication number
US20100203234A1
US20100203234A1US12/702,982US70298210AUS2010203234A1US 20100203234 A1US20100203234 A1US 20100203234A1US 70298210 AUS70298210 AUS 70298210AUS 2010203234 A1US2010203234 A1US 2010203234A1
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US
United States
Prior art keywords
sma
layer
substrate
shape memory
actuator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/702,982
Inventor
David A. Anderson
James F. Kelley
Naim S. Istephanous
Steven L. Waldhauser
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Medtronic Inc
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Medtronic Inc
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Filing date
Publication date
Application filed by Medtronic IncfiledCriticalMedtronic Inc
Priority to US12/702,982priorityCriticalpatent/US20100203234A1/en
Assigned to MEDTRONIC, INC.reassignmentMEDTRONIC, INC.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: ANDERSON, DAVID A, ISTEPHANOUS, NAIM S, KELLEY, JAMES F, WALDHAUSER, STEVEN L
Publication of US20100203234A1publicationCriticalpatent/US20100203234A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

A shape memory alloy (SMA) actuator includes a groove formed in a surface of a shape memory alloy (SMA) substrate establishing a trace pattern for a layer of conductive material formed over an electrically insulative layer. The trace pattern includes a first end, a second end, and a heating element disposed between the first and second ends. The SMA substrate is trained to deform at a transition temperature achieved when electricity is conducted through the conductive material via first and second interconnect pads terminating the first and second ends of the trace pattern.

Description

Claims (4)

US12/702,9822003-04-092010-02-09Shape memory alloy actuatorsAbandonedUS20100203234A1 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US12/702,982US20100203234A1 (en)2003-04-092010-02-09Shape memory alloy actuators

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US10/410,546US7658709B2 (en)2003-04-092003-04-09Shape memory alloy actuators
US12/702,982US20100203234A1 (en)2003-04-092010-02-09Shape memory alloy actuators

Related Parent Applications (1)

Application NumberTitlePriority DateFiling Date
US10/410,546ContinuationUS7658709B2 (en)2003-04-092003-04-09Shape memory alloy actuators

Publications (1)

Publication NumberPublication Date
US20100203234A1true US20100203234A1 (en)2010-08-12

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ID=33130807

Family Applications (2)

Application NumberTitlePriority DateFiling Date
US10/410,546Expired - Fee RelatedUS7658709B2 (en)2003-04-092003-04-09Shape memory alloy actuators
US12/702,982AbandonedUS20100203234A1 (en)2003-04-092010-02-09Shape memory alloy actuators

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Application NumberTitlePriority DateFiling Date
US10/410,546Expired - Fee RelatedUS7658709B2 (en)2003-04-092003-04-09Shape memory alloy actuators

Country Status (2)

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US (2)US7658709B2 (en)
WO (1)WO2004091681A1 (en)

Cited By (20)

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US20120193677A1 (en)*2011-02-022012-08-02Transphorm Inc.III-N Device Structures and Methods
US8742460B2 (en)2010-12-152014-06-03Transphorm Inc.Transistors with isolation regions
US8742459B2 (en)2009-05-142014-06-03Transphorm Inc.High voltage III-nitride semiconductor devices
US8772842B2 (en)2011-03-042014-07-08Transphorm, Inc.Semiconductor diodes with low reverse bias currents
US8901604B2 (en)2011-09-062014-12-02Transphorm Inc.Semiconductor devices with guard rings
US9093366B2 (en)2012-04-092015-07-28Transphorm Inc.N-polar III-nitride transistors
US9165766B2 (en)2012-02-032015-10-20Transphorm Inc.Buffer layer structures suited for III-nitride devices with foreign substrates
US9171836B2 (en)2011-10-072015-10-27Transphorm Inc.Method of forming electronic components with increased reliability
US9171730B2 (en)2013-02-152015-10-27Transphorm Inc.Electrodes for semiconductor devices and methods of forming the same
US9184275B2 (en)2012-06-272015-11-10Transphorm Inc.Semiconductor devices with integrated hole collectors
US9245992B2 (en)2013-03-152016-01-26Transphorm Inc.Carbon doping semiconductor devices
US9257547B2 (en)2011-09-132016-02-09Transphorm Inc.III-N device structures having a non-insulating substrate
US9318593B2 (en)2014-07-212016-04-19Transphorm Inc.Forming enhancement mode III-nitride devices
US9443938B2 (en)2013-07-192016-09-13Transphorm Inc.III-nitride transistor including a p-type depleting layer
US9536967B2 (en)2014-12-162017-01-03Transphorm Inc.Recessed ohmic contacts in a III-N device
US9536966B2 (en)2014-12-162017-01-03Transphorm Inc.Gate structures for III-N devices
US9590060B2 (en)2013-03-132017-03-07Transphorm Inc.Enhancement-mode III-nitride devices
US10224401B2 (en)2016-05-312019-03-05Transphorm Inc.III-nitride devices including a graded depleting layer
US20210402156A1 (en)*2020-06-302021-12-30Becton, Dickinson And CompanyCatheter tip passive control device and related systems and methods
US11322599B2 (en)2016-01-152022-05-03Transphorm Technology, Inc.Enhancement mode III-nitride devices having an Al1-xSixO gate insulator

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WO2008070189A2 (en)2006-12-062008-06-12The Cleveland Clinic FoundationMethod and system for treating acute heart failure by neuromodulation
US8663096B2 (en)*2007-11-132014-03-04Covidien LpSystem and method for rigidizing flexible medical implements
US8246575B2 (en)2008-02-262012-08-21Tyco Healthcare Group LpFlexible hollow spine with locking feature and manipulation structure
JP2009299487A (en)*2008-06-102009-12-24Olympus CorpShape memory alloy actuator
US8486009B2 (en)*2011-06-202013-07-16Hue-Teh ShihSystems and methods for steering catheters
US9655679B2 (en)*2012-05-012017-05-23University Of MarylandActuated steerable probe and systems and methods of using same
US10661885B2 (en)*2012-05-162020-05-26The Boeing CompanyShape memory alloy active spars for blade twist
CA2946791C (en)2014-05-222023-09-19CARDIONOMIC, Inc.Catheter and catheter system for electrical neuromodulation
EP3194007B1 (en)2014-09-082018-07-04Cardionomic, Inc.Catheter and electrode systems for electrical neuromodulation
EP3194017A1 (en)2014-09-082017-07-26Cardionomic, Inc.Methods for electrical neuromodulation of the heart
JP6626111B2 (en)2015-01-052019-12-25カーディオノミック,インク. Method and system for promoting cardiac regulation
AU2017229496B2 (en)2016-03-092022-03-31CARDIONOMIC, Inc.Cardiac contractility neurostimulation systems and methods
WO2019055434A1 (en)2017-09-132019-03-21CARDIONOMIC, Inc.Neurostimulation systems and methods for affecting cardiac contractility
EP3836859B1 (en)2018-08-132025-03-05Cardionomic, Inc.Systems for affecting cardiac contractility and/or relaxation
AU2020269601A1 (en)2019-05-062021-12-02CARDIONOMIC, Inc.Systems and methods for denoising physiological signals during electrical neuromodulation
CN112946969B (en)*2019-11-252022-12-06新思考电机有限公司 Optical component driving device, camera device, and electronic equipment

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US6422011B1 (en)*2000-10-312002-07-23Microsoft CorporationThermal out-of-plane buckle-beam actuator
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Cited By (41)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8742459B2 (en)2009-05-142014-06-03Transphorm Inc.High voltage III-nitride semiconductor devices
US9293561B2 (en)2009-05-142016-03-22Transphorm Inc.High voltage III-nitride semiconductor devices
US9147760B2 (en)2010-12-152015-09-29Transphorm Inc.Transistors with isolation regions
US9437707B2 (en)2010-12-152016-09-06Transphorm Inc.Transistors with isolation regions
US8742460B2 (en)2010-12-152014-06-03Transphorm Inc.Transistors with isolation regions
US9224671B2 (en)2011-02-022015-12-29Transphorm Inc.III-N device structures and methods
US20120193677A1 (en)*2011-02-022012-08-02Transphorm Inc.III-N Device Structures and Methods
US8643062B2 (en)*2011-02-022014-02-04Transphorm Inc.III-N device structures and methods
US8895421B2 (en)2011-02-022014-11-25Transphorm Inc.III-N device structures and methods
US8895423B2 (en)2011-03-042014-11-25Transphorm Inc.Method for making semiconductor diodes with low reverse bias currents
US8772842B2 (en)2011-03-042014-07-08Transphorm, Inc.Semiconductor diodes with low reverse bias currents
US9224805B2 (en)2011-09-062015-12-29Transphorm Inc.Semiconductor devices with guard rings
US8901604B2 (en)2011-09-062014-12-02Transphorm Inc.Semiconductor devices with guard rings
US9257547B2 (en)2011-09-132016-02-09Transphorm Inc.III-N device structures having a non-insulating substrate
US9171836B2 (en)2011-10-072015-10-27Transphorm Inc.Method of forming electronic components with increased reliability
US9165766B2 (en)2012-02-032015-10-20Transphorm Inc.Buffer layer structures suited for III-nitride devices with foreign substrates
US9685323B2 (en)2012-02-032017-06-20Transphorm Inc.Buffer layer structures suited for III-nitride devices with foreign substrates
US9093366B2 (en)2012-04-092015-07-28Transphorm Inc.N-polar III-nitride transistors
US9490324B2 (en)2012-04-092016-11-08Transphorm Inc.N-polar III-nitride transistors
US9184275B2 (en)2012-06-272015-11-10Transphorm Inc.Semiconductor devices with integrated hole collectors
US9634100B2 (en)2012-06-272017-04-25Transphorm Inc.Semiconductor devices with integrated hole collectors
US9171730B2 (en)2013-02-152015-10-27Transphorm Inc.Electrodes for semiconductor devices and methods of forming the same
US9520491B2 (en)2013-02-152016-12-13Transphorm Inc.Electrodes for semiconductor devices and methods of forming the same
US10535763B2 (en)2013-03-132020-01-14Transphorm Inc.Enhancement-mode III-nitride devices
US10043898B2 (en)2013-03-132018-08-07Transphorm Inc.Enhancement-mode III-nitride devices
US9590060B2 (en)2013-03-132017-03-07Transphorm Inc.Enhancement-mode III-nitride devices
US9245993B2 (en)2013-03-152016-01-26Transphorm Inc.Carbon doping semiconductor devices
US9865719B2 (en)2013-03-152018-01-09Transphorm Inc.Carbon doping semiconductor devices
US9245992B2 (en)2013-03-152016-01-26Transphorm Inc.Carbon doping semiconductor devices
US9842922B2 (en)2013-07-192017-12-12Transphorm Inc.III-nitride transistor including a p-type depleting layer
US9443938B2 (en)2013-07-192016-09-13Transphorm Inc.III-nitride transistor including a p-type depleting layer
US10043896B2 (en)2013-07-192018-08-07Transphorm Inc.III-Nitride transistor including a III-N depleting layer
US9935190B2 (en)2014-07-212018-04-03Transphorm Inc.Forming enhancement mode III-nitride devices
US9318593B2 (en)2014-07-212016-04-19Transphorm Inc.Forming enhancement mode III-nitride devices
US9536966B2 (en)2014-12-162017-01-03Transphorm Inc.Gate structures for III-N devices
US9536967B2 (en)2014-12-162017-01-03Transphorm Inc.Recessed ohmic contacts in a III-N device
US11322599B2 (en)2016-01-152022-05-03Transphorm Technology, Inc.Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
US10224401B2 (en)2016-05-312019-03-05Transphorm Inc.III-nitride devices including a graded depleting layer
US10629681B2 (en)2016-05-312020-04-21Transphorm Technology, Inc.III-nitride devices including a graded depleting layer
US11121216B2 (en)2016-05-312021-09-14Transphorm Technology, Inc.III-nitride devices including a graded depleting layer
US20210402156A1 (en)*2020-06-302021-12-30Becton, Dickinson And CompanyCatheter tip passive control device and related systems and methods

Also Published As

Publication numberPublication date
US20040204676A1 (en)2004-10-14
US7658709B2 (en)2010-02-09
WO2004091681A1 (en)2004-10-28

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Legal Events

DateCodeTitleDescription
ASAssignment

Owner name:MEDTRONIC, INC., MINNESOTA

Free format text:ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ANDERSON, DAVID A;KELLEY, JAMES F;ISTEPHANOUS, NAIM S;AND OTHERS;REEL/FRAME:024378/0037

Effective date:20030407

STCBInformation on status: application discontinuation

Free format text:ABANDONED -- FAILURE TO PAY ISSUE FEE


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