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US20100109195A1 - Release agent partition control in imprint lithography - Google Patents

Release agent partition control in imprint lithography
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Publication number
US20100109195A1
US20100109195A1US12/612,527US61252709AUS2010109195A1US 20100109195 A1US20100109195 A1US 20100109195A1US 61252709 AUS61252709 AUS 61252709AUS 2010109195 A1US2010109195 A1US 2010109195A1
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US
United States
Prior art keywords
template
imprint lithography
release agent
polar
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/612,527
Inventor
Frank Y. Xu
Weijun Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints IncfiledCriticalMolecular Imprints Inc
Priority to US12/612,527priorityCriticalpatent/US20100109195A1/en
Priority to JP2011535557Aprioritypatent/JP5714496B2/en
Priority to KR1020117012894Aprioritypatent/KR101732526B1/en
Priority to PCT/US2009/005990prioritypatent/WO2010053558A2/en
Assigned to MOLECULAR IMPRINTS, INC.reassignmentMOLECULAR IMPRINTS, INC.ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: LIU, WEIJUN, XU, FRANK Y.
Publication of US20100109195A1publicationCriticalpatent/US20100109195A1/en
Priority to US13/226,635prioritypatent/US8637587B2/en
Priority to JP2014243281Aprioritypatent/JP5889388B2/en
Assigned to JP MORGAN CHASE BANK, N.A.reassignmentJP MORGAN CHASE BANK, N.A.PATENT SECURITY AGREEMENTAssignors: MAGIC LEAP, INC., MENTOR ACQUISITION ONE, LLC, MOLECULAR IMPRINTS, INC.
Assigned to CITIBANK, N.A.reassignmentCITIBANK, N.A.ASSIGNMENT OF SECURITY INTEREST IN PATENTSAssignors: JPMORGAN CHASE BANK, N.A.
Abandonedlegal-statusCriticalCurrent

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Abstract

Release agents with increased affinity toward nano-imprint lithography template surfaces interact strongly with the template during separation of the template from the solidified resist in a nano-imprint lithography process. The strong interaction between the surfactant and the template surface reduces the amount of surfactant pulled off the template surface during separation of a patterned layer from the template in an imprint lithography cycle. Maintaining more surfactant associated with the surface of the template after the separation of the patterned layer from the template may reduce the amount of surfactant needed in a liquid resist to achieve suitable release of the solidified resist from the template during an imprint lithography process. Strong association of the release agent with the surface of the template facilitates the formation of ultra-thin residual layers and dense fine features in nano-imprint lithography.

Description

Claims (27)

24. A imprint lithography method comprising:
disposing a polymerizable composition on an imprint lithography substrate;
contacting the polymerizable composition with an imprint lithography template;
solidifying the polymerizable composition to form a patterned layer adhered to the imprint lithography substrate; and
separating the imprint lithography template from the solidified patterned layer,
wherein the polymerizable composition comprises an imprint lithography release agent, the release agent comprising:
a non-polar fluorinated portion; and
a polar poly(oxyalkylene) portion bonded to the non-polar fluorinated portion, the polar poly(oxyalkylene) portion formed from a multiplicity of oxyalkylene units including at least one ethylene oxide unit,
wherein contacting the polymerizable composition with the imprint lithography template comprises forming multiple polar interactions between the release agent and the surface of the imprint lithography template.
US12/612,5272008-11-052009-11-04Release agent partition control in imprint lithographyAbandonedUS20100109195A1 (en)

Priority Applications (6)

Application NumberPriority DateFiling DateTitle
US12/612,527US20100109195A1 (en)2008-11-052009-11-04Release agent partition control in imprint lithography
JP2011535557AJP5714496B2 (en)2008-11-052009-11-05 Release agent separation control in imprint lithography
KR1020117012894AKR101732526B1 (en)2008-11-052009-11-05Release agent partition control in imprint lithography
PCT/US2009/005990WO2010053558A2 (en)2008-11-052009-11-05Release agent partition control in imprint lithography
US13/226,635US8637587B2 (en)2008-11-052011-09-07Release agent partition control in imprint lithography
JP2014243281AJP5889388B2 (en)2008-11-052014-12-01 Release agent separation control in imprint lithography

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
US11150908P2008-11-052008-11-05
US12/612,527US20100109195A1 (en)2008-11-052009-11-04Release agent partition control in imprint lithography

Related Child Applications (1)

Application NumberTitlePriority DateFiling Date
US13/226,635ContinuationUS8637587B2 (en)2008-11-052011-09-07Release agent partition control in imprint lithography

Publications (1)

Publication NumberPublication Date
US20100109195A1true US20100109195A1 (en)2010-05-06

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Family Applications (2)

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US12/612,527AbandonedUS20100109195A1 (en)2008-11-052009-11-04Release agent partition control in imprint lithography
US13/226,635ActiveUS8637587B2 (en)2008-11-052011-09-07Release agent partition control in imprint lithography

Family Applications After (1)

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US13/226,635ActiveUS8637587B2 (en)2008-11-052011-09-07Release agent partition control in imprint lithography

Country Status (5)

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US (2)US20100109195A1 (en)
JP (2)JP5714496B2 (en)
KR (1)KR101732526B1 (en)
TW (1)TWI429524B (en)
WO (1)WO2010053558A2 (en)

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US10620539B2 (en)2016-03-312020-04-14Canon Kabushiki KaishaCuring substrate pretreatment compositions in nanoimprint lithography
US10134588B2 (en)2016-03-312018-11-20Canon Kabushiki KaishaImprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography
US10095106B2 (en)2016-03-312018-10-09Canon Kabushiki KaishaRemoving substrate pretreatment compositions in nanoimprint lithography
US10509313B2 (en)2016-06-282019-12-17Canon Kabushiki KaishaImprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography
US10317793B2 (en)2017-03-032019-06-11Canon Kabushiki KaishaSubstrate pretreatment compositions for nanoimprint lithography
KR102452035B1 (en)2017-04-142022-10-11삼성디스플레이 주식회사Composition for soft mold and soft mold manufactured by using the composition
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JP2015092583A (en)2015-05-14

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