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US20090163826A1 - Memristor crossbar neural interface - Google Patents

Memristor crossbar neural interface
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Publication number
US20090163826A1
US20090163826A1US12/379,312US37931209AUS2009163826A1US 20090163826 A1US20090163826 A1US 20090163826A1US 37931209 AUS37931209 AUS 37931209AUS 2009163826 A1US2009163826 A1US 2009163826A1
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array
electrodes
signal processor
programmable crossbar
crossbar signal
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US7902867B2 (en
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Blaise Laurent Mouttet
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Abstract

A device includes an array of electrodes configured for attachment in or on the human head interconnected to control circuitry via a programmable crossbar signal processor having reconfigurable resistance states. In various embodiments the device may be used as a controller for a video game console, a robotic prosthesis, a portable electronic device, or a motor vehicle.

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US12/379,3122006-04-032009-02-19Memristor crossbar neural interfaceExpired - Fee RelatedUS7902867B2 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
US12/379,312US7902867B2 (en)2006-04-032009-02-19Memristor crossbar neural interface

Applications Claiming Priority (4)

Application NumberPriority DateFiling DateTitle
US11/395,237US7302513B2 (en)2006-04-032006-04-03Programmable crossbar signal processor
US11/790,496US7459933B2 (en)2006-04-032007-04-26Programmable crossbar signal processor used in image processing
US11/976,925US7564262B2 (en)2006-04-032007-10-30Crossbar comparator
US12/379,312US7902867B2 (en)2006-04-032009-02-19Memristor crossbar neural interface

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US11/976,925Continuation-In-PartUS7564262B2 (en)2006-04-032007-10-30Crossbar comparator

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US20090163826A1true US20090163826A1 (en)2009-06-25
US7902867B2 US7902867B2 (en)2011-03-08

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WO2011132597A1 (en)2010-04-192011-10-27独立行政法人物質・材料研究機構Inductor composed of capacitor array
US20120011088A1 (en)*2010-07-072012-01-12Qualcomm IncorporatedCommunication and synapse training method and hardware for biologically inspired networks
WO2012011900A1 (en)*2010-07-212012-01-26Hewlett-Packard Development Company, L.P.Nanoscale switching device
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US8207520B2 (en)2010-04-022012-06-26Hewlett-Packard Development Company, L.P.Programmable crosspoint device with an integral diode
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US20120327698A1 (en)*2010-03-122012-12-27Frederick PernerInterconnection architecture for memory structures
US8537599B2 (en)2010-08-122013-09-17Micron Technology, Inc.Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
WO2014100024A1 (en)*2012-12-182014-06-26The Regents Of The University Of MichiganResistive memory structure for single or multi-bit data storage
US20150013459A1 (en)*2012-03-192015-01-15Panasonic CorporationIv converter and inertial force sensor using iv converter
WO2015065415A1 (en)*2013-10-312015-05-07Hewlett-Packard Development Company, L.P.Memristive device switching by alternating polarity pulses
WO2016018221A1 (en)*2014-07-282016-02-04Hewlett-Packard Development Company, L.P.Adjusting switching parameters of a memristor array
WO2016064404A1 (en)*2014-10-232016-04-28Hewlett-Packard Development Company, L.P.Generating a representative logic indicator of grouped memristors
WO2016068920A1 (en)*2014-10-292016-05-06Hewlett Packard Enterprise Development LpMemristive dot product engine for vector processing
US9342780B2 (en)*2010-07-302016-05-17Hewlett Packard Enterprise Development LpSystems and methods for modeling binary synapses
US20160334866A9 (en)*2008-04-072016-11-17Mohammad A. MazedChemical Composition And Its Delivery For Lowering The Risks Of Alzheimer's, Cardiovascular And Type -2 Diabetes Diseases
US9679242B2 (en)2002-03-122017-06-13Knowm Tech, LlcMemristor apparatus with meta-stable switching elements
WO2017155544A1 (en)*2016-03-112017-09-14Hewlett Packard Enterprise Development LpHardware accelerators for calculating node values of neural networks
US9785615B1 (en)*2016-06-242017-10-10Hewlett Packard Enterprise Development LpMemristive computation of a vector cross product
CN108604459A (en)*2015-12-222018-09-28Arm有限公司Circuit and method for configurable impedance array
CN110837253A (en)*2019-10-312020-02-25华中科技大学Intelligent addressing system based on memristor synapse
CN110842915A (en)*2019-10-182020-02-28南京大学Robot control system and method based on memristor cross array
CN112289930A (en)*2020-10-292021-01-29华中科技大学Cu with volatility and non-volatilityxO memristor and regulation and control method thereof
US20220168036A1 (en)*2020-11-302022-06-02Evalve, Inc.Systems, apparatuses, and methods for removing a medical implant from cardiac tissue

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US7082052B2 (en)2004-02-062006-07-25Unity Semiconductor CorporationMulti-resistive state element with reactive metal
US20060171200A1 (en)2004-02-062006-08-03Unity Semiconductor CorporationMemory using mixed valence conductive oxides
US8565003B2 (en)2011-06-282013-10-22Unity Semiconductor CorporationMultilayer cross-point memory array having reduced disturb susceptibility
US8559209B2 (en)2011-06-102013-10-15Unity Semiconductor CorporationArray voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
US20130082232A1 (en)2011-09-302013-04-04Unity Semiconductor CorporationMulti Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US8937292B2 (en)2011-08-152015-01-20Unity Semiconductor CorporationVertical cross point arrays for ultra high density memory applications
US8270193B2 (en)2010-01-292012-09-18Unity Semiconductor CorporationLocal bit lines and methods of selecting the same to access memory elements in cross-point arrays
US8638584B2 (en)2010-02-022014-01-28Unity Semiconductor CorporationMemory architectures and techniques to enhance throughput for cross-point arrays
US8891276B2 (en)2011-06-102014-11-18Unity Semiconductor CorporationMemory array with local bitlines and local-to-global bitline pass gates and gain stages
US10566056B2 (en)2011-06-102020-02-18Unity Semiconductor CorporationGlobal bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US9117495B2 (en)2011-06-102015-08-25Unity Semiconductor CorporationGlobal bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US10392243B2 (en)2014-10-022019-08-27Board Of Regents, The University Of Texas SystemCoupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors
US10248907B2 (en)2015-10-202019-04-02International Business Machines CorporationResistive processing unit
US9715656B1 (en)2016-09-122017-07-25International Business Machines CorporationKilling asymmetric resistive processing units for neural network training
US9646243B1 (en)2016-09-122017-05-09International Business Machines CorporationConvolutional neural networks using resistive processing unit array
WO2018080451A1 (en)*2016-10-252018-05-03Hewlett-Packard Development Company, L.P.Memristor code comparator to compare sensor signals to reference signals
KR20180072259A (en)2016-12-212018-06-29한국과학기술원Soft electronic system integrating memory and logic device
WO2019212488A1 (en)2018-04-302019-11-07Hewlett Packard Enterprise Development LpAcceleration of model/weight programming in memristor crossbar arrays
US12112200B2 (en)2021-09-132024-10-08International Business Machines CorporationPipeline parallel computing using extended memory

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Cited By (64)

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US9679242B2 (en)2002-03-122017-06-13Knowm Tech, LlcMemristor apparatus with meta-stable switching elements
US9104975B2 (en)*2002-03-122015-08-11Knowmtech, LlcMemristor apparatus
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US20160334866A9 (en)*2008-04-072016-11-17Mohammad A. MazedChemical Composition And Its Delivery For Lowering The Risks Of Alzheimer's, Cardiovascular And Type -2 Diabetes Diseases
US9823737B2 (en)*2008-04-072017-11-21Mohammad A MazedAugmented reality personal assistant apparatus
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WO2011025495A1 (en)*2009-08-282011-03-03Hewlett-Packard Development Company, L.P.Two terminal memcapacitor device
TWI497785B (en)*2009-08-282015-08-21Hewlett Packard Development Co Two-terminal memory capacitor device
US8779848B2 (en)2009-08-282014-07-15Hewlett-Packard Development Company, L.P.Two terminal memcapacitor device
WO2011083327A1 (en)2010-01-072011-07-14Dna Electronics LtdElectrically actuated switch
US9196354B2 (en)*2010-02-092015-11-24Hewlett-Packard Development Company, L.P.Memory resistor adjustment using feedback control
WO2011099961A1 (en)*2010-02-092011-08-18Hewlett-Packard Development Company, L.P.Memory resistor adjustment using feedback control
US20120127780A1 (en)*2010-02-092012-05-24John Paul StrachanMemory resistor adjustment using feedback control
US9830970B2 (en)2010-02-152017-11-28Micron Technology, Inc.Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
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US8416609B2 (en)2010-02-152013-04-09Micron Technology, Inc.Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8437174B2 (en)2010-02-152013-05-07Micron Technology, Inc.Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
US20110199814A1 (en)*2010-02-152011-08-18Meade Roy ECross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems
US10796744B2 (en)2010-02-152020-10-06Micron Technology, Inc.Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US20110199815A1 (en)*2010-02-152011-08-18Meade Roy EMemcapacitor Devices, Field Effect Transistor Devices, Non-Volatile Memory Arrays, And Methods Of Programming
US9419215B2 (en)2010-02-152016-08-16Micron Technology, Inc.Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US9236473B2 (en)2010-02-152016-01-12Micron Technology, Inc.Field effect transistor devices
US8902639B2 (en)2010-02-152014-12-02Micron Technology, Inc.Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
WO2011100138A3 (en)*2010-02-152011-12-01Micron Technology, IncCross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US20120327698A1 (en)*2010-03-122012-12-27Frederick PernerInterconnection architecture for memory structures
US8207520B2 (en)2010-04-022012-06-26Hewlett-Packard Development Company, L.P.Programmable crosspoint device with an integral diode
WO2011132597A1 (en)2010-04-192011-10-27独立行政法人物質・材料研究機構Inductor composed of capacitor array
US9092736B2 (en)*2010-07-072015-07-28Qualcomm IncorporatedCommunication and synapse training method and hardware for biologically inspired networks
US20120011088A1 (en)*2010-07-072012-01-12Qualcomm IncorporatedCommunication and synapse training method and hardware for biologically inspired networks
US8912520B2 (en)2010-07-212014-12-16Hewlett-Packard Development Company, L.P.Nanoscale switching device
WO2012011900A1 (en)*2010-07-212012-01-26Hewlett-Packard Development Company, L.P.Nanoscale switching device
US9342780B2 (en)*2010-07-302016-05-17Hewlett Packard Enterprise Development LpSystems and methods for modeling binary synapses
US8634224B2 (en)2010-08-122014-01-21Micron Technology, Inc.Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
US9275728B2 (en)2010-08-122016-03-01Micron Technology, Inc.Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
US8537599B2 (en)2010-08-122013-09-17Micron Technology, Inc.Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
US9293200B2 (en)2010-08-302016-03-22Hewlett Packard Enterprise Development LpMultilayer memory array
WO2012030320A1 (en)*2010-08-302012-03-08Hewlett-Packard Development Company, L.P.Multilayer memory array
WO2012057771A1 (en)*2010-10-282012-05-03Hewlett-Packard Development Company, L.P.Systems and methods for synthesizing molecules on substrates
WO2012102734A1 (en)*2011-01-282012-08-02Hewlett-Packard Development Company, L.P.Methods, systems and apparatus for resistive memory
US9455672B2 (en)*2012-03-192016-09-27Panasonic Intellectual Property Management Co., Ltd.IV converter and inertial force sensor using IV converter
US20150013459A1 (en)*2012-03-192015-01-15Panasonic CorporationIv converter and inertial force sensor using iv converter
US9805791B2 (en)2012-12-182017-10-31The Regents Of The University Of MichiganResistive memory structure for single or multi-bit data storage
WO2014100024A1 (en)*2012-12-182014-06-26The Regents Of The University Of MichiganResistive memory structure for single or multi-bit data storage
WO2015065415A1 (en)*2013-10-312015-05-07Hewlett-Packard Development Company, L.P.Memristive device switching by alternating polarity pulses
US9715926B2 (en)2013-10-312017-07-25Hewlett Packard Enterprise Development LpMemristive device switching by alternating polarity pulses
WO2016018221A1 (en)*2014-07-282016-02-04Hewlett-Packard Development Company, L.P.Adjusting switching parameters of a memristor array
US10056142B2 (en)2014-10-232018-08-21Hewlett-Packard Development Company, L.P.Generating a representative logic indicator of grouped memristors
WO2016064404A1 (en)*2014-10-232016-04-28Hewlett-Packard Development Company, L.P.Generating a representative logic indicator of grouped memristors
US10541026B2 (en)2014-10-292020-01-21Hewlett Packard Enterprise Development LpMemristive dot product engine for vector processing
US10262733B2 (en)2014-10-292019-04-16Hewlett Packard Enterprise Development LpMemristive dot product engine for vector processing
WO2016068920A1 (en)*2014-10-292016-05-06Hewlett Packard Enterprise Development LpMemristive dot product engine for vector processing
CN108604459A (en)*2015-12-222018-09-28Arm有限公司Circuit and method for configurable impedance array
US10332592B2 (en)2016-03-112019-06-25Hewlett Packard Enterprise Development LpHardware accelerators for calculating node values of neural networks
WO2017155544A1 (en)*2016-03-112017-09-14Hewlett Packard Enterprise Development LpHardware accelerators for calculating node values of neural networks
US9785615B1 (en)*2016-06-242017-10-10Hewlett Packard Enterprise Development LpMemristive computation of a vector cross product
CN110842915A (en)*2019-10-182020-02-28南京大学Robot control system and method based on memristor cross array
WO2021072817A1 (en)*2019-10-182021-04-22南京大学Memristor cross array-based robot control system and method
US20220331952A1 (en)*2019-10-182022-10-20Nanjing UniversitySystem and method for robot control based on memristive crossbar array
US12011833B2 (en)*2019-10-182024-06-18Nanjing UniversitySystem and method for robot control based on memristive crossbar array
CN110837253A (en)*2019-10-312020-02-25华中科技大学Intelligent addressing system based on memristor synapse
CN112289930A (en)*2020-10-292021-01-29华中科技大学Cu with volatility and non-volatilityxO memristor and regulation and control method thereof
US20220168036A1 (en)*2020-11-302022-06-02Evalve, Inc.Systems, apparatuses, and methods for removing a medical implant from cardiac tissue

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