







| TABLE 1 | |||||
| Sensor 2 | Sensor 3 | Actuator activated | |||
| 0 | 0 | 0 | |||
| 0 | 0 | 1 | Actuator 2 | ||
| 0 | 1 | 0 | Actuator 3 | ||
| 0 | 1 | 1 | Actuator 4 | ||
| 1 | 0 | 0 | Actuator 5 | ||
| 1 | 0 | 1 | Actuator 6 | ||
| 1 | 1 | 0 | Actuator 7 | ||
| 1 | 1 | 1 | Actuator 8 | ||
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/379,312US7902867B2 (en) | 2006-04-03 | 2009-02-19 | Memristor crossbar neural interface |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/395,237US7302513B2 (en) | 2006-04-03 | 2006-04-03 | Programmable crossbar signal processor |
| US11/790,496US7459933B2 (en) | 2006-04-03 | 2007-04-26 | Programmable crossbar signal processor used in image processing |
| US11/976,925US7564262B2 (en) | 2006-04-03 | 2007-10-30 | Crossbar comparator |
| US12/379,312US7902867B2 (en) | 2006-04-03 | 2009-02-19 | Memristor crossbar neural interface |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/976,925Continuation-In-PartUS7564262B2 (en) | 2006-04-03 | 2007-10-30 | Crossbar comparator |
| Publication Number | Publication Date |
|---|---|
| US20090163826A1true US20090163826A1 (en) | 2009-06-25 |
| US7902867B2 US7902867B2 (en) | 2011-03-08 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/379,312Expired - Fee RelatedUS7902867B2 (en) | 2006-04-03 | 2009-02-19 | Memristor crossbar neural interface |
| Country | Link |
|---|---|
| US (1) | US7902867B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011025495A1 (en)* | 2009-08-28 | 2011-03-03 | Hewlett-Packard Development Company, L.P. | Two terminal memcapacitor device |
| WO2011083327A1 (en) | 2010-01-07 | 2011-07-14 | Dna Electronics Ltd | Electrically actuated switch |
| WO2011099961A1 (en)* | 2010-02-09 | 2011-08-18 | Hewlett-Packard Development Company, L.P. | Memory resistor adjustment using feedback control |
| US20110199814A1 (en)* | 2010-02-15 | 2011-08-18 | Meade Roy E | Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems |
| US20110199815A1 (en)* | 2010-02-15 | 2011-08-18 | Meade Roy E | Memcapacitor Devices, Field Effect Transistor Devices, Non-Volatile Memory Arrays, And Methods Of Programming |
| WO2011016794A3 (en)* | 2009-07-28 | 2011-10-20 | Hewlett-Packard Development Company, L.P. | Memristors with asymmetric electrodes |
| WO2011132597A1 (en) | 2010-04-19 | 2011-10-27 | 独立行政法人物質・材料研究機構 | Inductor composed of capacitor array |
| US20120011088A1 (en)* | 2010-07-07 | 2012-01-12 | Qualcomm Incorporated | Communication and synapse training method and hardware for biologically inspired networks |
| WO2012011900A1 (en)* | 2010-07-21 | 2012-01-26 | Hewlett-Packard Development Company, L.P. | Nanoscale switching device |
| WO2012030320A1 (en)* | 2010-08-30 | 2012-03-08 | Hewlett-Packard Development Company, L.P. | Multilayer memory array |
| WO2012057771A1 (en)* | 2010-10-28 | 2012-05-03 | Hewlett-Packard Development Company, L.P. | Systems and methods for synthesizing molecules on substrates |
| US8207520B2 (en) | 2010-04-02 | 2012-06-26 | Hewlett-Packard Development Company, L.P. | Programmable crosspoint device with an integral diode |
| US20120175583A1 (en)* | 2002-03-12 | 2012-07-12 | Knowmtech, Llc. | Memristor apparatus |
| WO2012102734A1 (en)* | 2011-01-28 | 2012-08-02 | Hewlett-Packard Development Company, L.P. | Methods, systems and apparatus for resistive memory |
| US20120327698A1 (en)* | 2010-03-12 | 2012-12-27 | Frederick Perner | Interconnection architecture for memory structures |
| US8537599B2 (en) | 2010-08-12 | 2013-09-17 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell |
| WO2014100024A1 (en)* | 2012-12-18 | 2014-06-26 | The Regents Of The University Of Michigan | Resistive memory structure for single or multi-bit data storage |
| US20150013459A1 (en)* | 2012-03-19 | 2015-01-15 | Panasonic Corporation | Iv converter and inertial force sensor using iv converter |
| WO2015065415A1 (en)* | 2013-10-31 | 2015-05-07 | Hewlett-Packard Development Company, L.P. | Memristive device switching by alternating polarity pulses |
| WO2016018221A1 (en)* | 2014-07-28 | 2016-02-04 | Hewlett-Packard Development Company, L.P. | Adjusting switching parameters of a memristor array |
| WO2016064404A1 (en)* | 2014-10-23 | 2016-04-28 | Hewlett-Packard Development Company, L.P. | Generating a representative logic indicator of grouped memristors |
| WO2016068920A1 (en)* | 2014-10-29 | 2016-05-06 | Hewlett Packard Enterprise Development Lp | Memristive dot product engine for vector processing |
| US9342780B2 (en)* | 2010-07-30 | 2016-05-17 | Hewlett Packard Enterprise Development Lp | Systems and methods for modeling binary synapses |
| US20160334866A9 (en)* | 2008-04-07 | 2016-11-17 | Mohammad A. Mazed | Chemical Composition And Its Delivery For Lowering The Risks Of Alzheimer's, Cardiovascular And Type -2 Diabetes Diseases |
| US9679242B2 (en) | 2002-03-12 | 2017-06-13 | Knowm Tech, Llc | Memristor apparatus with meta-stable switching elements |
| WO2017155544A1 (en)* | 2016-03-11 | 2017-09-14 | Hewlett Packard Enterprise Development Lp | Hardware accelerators for calculating node values of neural networks |
| US9785615B1 (en)* | 2016-06-24 | 2017-10-10 | Hewlett Packard Enterprise Development Lp | Memristive computation of a vector cross product |
| CN108604459A (en)* | 2015-12-22 | 2018-09-28 | Arm有限公司 | Circuit and method for configurable impedance array |
| CN110837253A (en)* | 2019-10-31 | 2020-02-25 | 华中科技大学 | Intelligent addressing system based on memristor synapse |
| CN110842915A (en)* | 2019-10-18 | 2020-02-28 | 南京大学 | Robot control system and method based on memristor cross array |
| CN112289930A (en)* | 2020-10-29 | 2021-01-29 | 华中科技大学 | Cu with volatility and non-volatilityxO memristor and regulation and control method thereof |
| US20220168036A1 (en)* | 2020-11-30 | 2022-06-02 | Evalve, Inc. | Systems, apparatuses, and methods for removing a medical implant from cardiac tissue |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
| US20060171200A1 (en) | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
| US8565003B2 (en) | 2011-06-28 | 2013-10-22 | Unity Semiconductor Corporation | Multilayer cross-point memory array having reduced disturb susceptibility |
| US8559209B2 (en) | 2011-06-10 | 2013-10-15 | Unity Semiconductor Corporation | Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements |
| US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
| US8937292B2 (en) | 2011-08-15 | 2015-01-20 | Unity Semiconductor Corporation | Vertical cross point arrays for ultra high density memory applications |
| US8270193B2 (en) | 2010-01-29 | 2012-09-18 | Unity Semiconductor Corporation | Local bit lines and methods of selecting the same to access memory elements in cross-point arrays |
| US8638584B2 (en) | 2010-02-02 | 2014-01-28 | Unity Semiconductor Corporation | Memory architectures and techniques to enhance throughput for cross-point arrays |
| US8891276B2 (en) | 2011-06-10 | 2014-11-18 | Unity Semiconductor Corporation | Memory array with local bitlines and local-to-global bitline pass gates and gain stages |
| US10566056B2 (en) | 2011-06-10 | 2020-02-18 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
| US9117495B2 (en) | 2011-06-10 | 2015-08-25 | Unity Semiconductor Corporation | Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations |
| US10392243B2 (en) | 2014-10-02 | 2019-08-27 | Board Of Regents, The University Of Texas System | Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors |
| US10248907B2 (en) | 2015-10-20 | 2019-04-02 | International Business Machines Corporation | Resistive processing unit |
| US9715656B1 (en) | 2016-09-12 | 2017-07-25 | International Business Machines Corporation | Killing asymmetric resistive processing units for neural network training |
| US9646243B1 (en) | 2016-09-12 | 2017-05-09 | International Business Machines Corporation | Convolutional neural networks using resistive processing unit array |
| WO2018080451A1 (en)* | 2016-10-25 | 2018-05-03 | Hewlett-Packard Development Company, L.P. | Memristor code comparator to compare sensor signals to reference signals |
| KR20180072259A (en) | 2016-12-21 | 2018-06-29 | 한국과학기술원 | Soft electronic system integrating memory and logic device |
| WO2019212488A1 (en) | 2018-04-30 | 2019-11-07 | Hewlett Packard Enterprise Development Lp | Acceleration of model/weight programming in memristor crossbar arrays |
| US12112200B2 (en) | 2021-09-13 | 2024-10-08 | International Business Machines Corporation | Pipeline parallel computing using extended memory |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6993392B2 (en)* | 2002-03-14 | 2006-01-31 | Duke University | Miniaturized high-density multichannel electrode array for long-term neuronal recordings |
| US20070060831A1 (en)* | 2005-09-12 | 2007-03-15 | Le Tan T T | Method and system for detecting and classifyng the mental state of a subject |
| US7203789B2 (en)* | 2004-05-10 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Architecture and methods for computing with reconfigurable resistor crossbars |
| US20070231972A1 (en)* | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Manufacture of programmable crossbar signal processor |
| US7302513B2 (en)* | 2006-04-03 | 2007-11-27 | Blaise Laurent Mouttet | Programmable crossbar signal processor |
| US20080046023A1 (en)* | 2006-08-16 | 2008-02-21 | Fischell David R | Electrode switch for a brain neuropacemaker |
| US20080059688A1 (en)* | 2006-04-03 | 2008-03-06 | Mouttet Blaise L | Crossbar control circuit |
| US20080212382A1 (en)* | 2006-04-03 | 2008-09-04 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
| US20080222342A1 (en)* | 2006-04-03 | 2008-09-11 | Blaise Laurent Mouttet | Crossbar comparator |
| US7483747B2 (en)* | 2004-07-15 | 2009-01-27 | Northstar Neuroscience, Inc. | Systems and methods for enhancing or affecting neural stimulation efficiency and/or efficacy |
| US7489583B2 (en)* | 2005-09-06 | 2009-02-10 | Hewlett-Packard Development Company, L.P. | Constant-weight-code-based addressing of nanoscale and mixed microscale/nanoscale arrays |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6993392B2 (en)* | 2002-03-14 | 2006-01-31 | Duke University | Miniaturized high-density multichannel electrode array for long-term neuronal recordings |
| US7203789B2 (en)* | 2004-05-10 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Architecture and methods for computing with reconfigurable resistor crossbars |
| US7483747B2 (en)* | 2004-07-15 | 2009-01-27 | Northstar Neuroscience, Inc. | Systems and methods for enhancing or affecting neural stimulation efficiency and/or efficacy |
| US7489583B2 (en)* | 2005-09-06 | 2009-02-10 | Hewlett-Packard Development Company, L.P. | Constant-weight-code-based addressing of nanoscale and mixed microscale/nanoscale arrays |
| US20070060831A1 (en)* | 2005-09-12 | 2007-03-15 | Le Tan T T | Method and system for detecting and classifyng the mental state of a subject |
| US20070231972A1 (en)* | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Manufacture of programmable crossbar signal processor |
| US7302513B2 (en)* | 2006-04-03 | 2007-11-27 | Blaise Laurent Mouttet | Programmable crossbar signal processor |
| US20080059688A1 (en)* | 2006-04-03 | 2008-03-06 | Mouttet Blaise L | Crossbar control circuit |
| US20080212382A1 (en)* | 2006-04-03 | 2008-09-04 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
| US20080222342A1 (en)* | 2006-04-03 | 2008-09-11 | Blaise Laurent Mouttet | Crossbar comparator |
| US7459933B2 (en)* | 2006-04-03 | 2008-12-02 | Blaise Laurent Mouttet | Programmable crossbar signal processor used in image processing |
| US20080046023A1 (en)* | 2006-08-16 | 2008-02-21 | Fischell David R | Electrode switch for a brain neuropacemaker |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9679242B2 (en) | 2002-03-12 | 2017-06-13 | Knowm Tech, Llc | Memristor apparatus with meta-stable switching elements |
| US9104975B2 (en)* | 2002-03-12 | 2015-08-11 | Knowmtech, Llc | Memristor apparatus |
| US20120175583A1 (en)* | 2002-03-12 | 2012-07-12 | Knowmtech, Llc. | Memristor apparatus |
| US20160334866A9 (en)* | 2008-04-07 | 2016-11-17 | Mohammad A. Mazed | Chemical Composition And Its Delivery For Lowering The Risks Of Alzheimer's, Cardiovascular And Type -2 Diabetes Diseases |
| US9823737B2 (en)* | 2008-04-07 | 2017-11-21 | Mohammad A Mazed | Augmented reality personal assistant apparatus |
| US9171613B2 (en) | 2009-07-28 | 2015-10-27 | Hewlett-Packard Development Company, L.P. | Memristors with asymmetric electrodes |
| WO2011016794A3 (en)* | 2009-07-28 | 2011-10-20 | Hewlett-Packard Development Company, L.P. | Memristors with asymmetric electrodes |
| WO2011025495A1 (en)* | 2009-08-28 | 2011-03-03 | Hewlett-Packard Development Company, L.P. | Two terminal memcapacitor device |
| TWI497785B (en)* | 2009-08-28 | 2015-08-21 | Hewlett Packard Development Co | Two-terminal memory capacitor device |
| US8779848B2 (en) | 2009-08-28 | 2014-07-15 | Hewlett-Packard Development Company, L.P. | Two terminal memcapacitor device |
| WO2011083327A1 (en) | 2010-01-07 | 2011-07-14 | Dna Electronics Ltd | Electrically actuated switch |
| US9196354B2 (en)* | 2010-02-09 | 2015-11-24 | Hewlett-Packard Development Company, L.P. | Memory resistor adjustment using feedback control |
| WO2011099961A1 (en)* | 2010-02-09 | 2011-08-18 | Hewlett-Packard Development Company, L.P. | Memory resistor adjustment using feedback control |
| US20120127780A1 (en)* | 2010-02-09 | 2012-05-24 | John Paul Strachan | Memory resistor adjustment using feedback control |
| US9830970B2 (en) | 2010-02-15 | 2017-11-28 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US8867261B2 (en) | 2010-02-15 | 2014-10-21 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, and, non-volatile memory arrays |
| US10360967B2 (en) | 2010-02-15 | 2019-07-23 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US8437174B2 (en) | 2010-02-15 | 2013-05-07 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming |
| US20110199814A1 (en)* | 2010-02-15 | 2011-08-18 | Meade Roy E | Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems |
| US10796744B2 (en) | 2010-02-15 | 2020-10-06 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US20110199815A1 (en)* | 2010-02-15 | 2011-08-18 | Meade Roy E | Memcapacitor Devices, Field Effect Transistor Devices, Non-Volatile Memory Arrays, And Methods Of Programming |
| US9419215B2 (en) | 2010-02-15 | 2016-08-16 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US9236473B2 (en) | 2010-02-15 | 2016-01-12 | Micron Technology, Inc. | Field effect transistor devices |
| US8902639B2 (en) | 2010-02-15 | 2014-12-02 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| WO2011100138A3 (en)* | 2010-02-15 | 2011-12-01 | Micron Technology, Inc | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| US20120327698A1 (en)* | 2010-03-12 | 2012-12-27 | Frederick Perner | Interconnection architecture for memory structures |
| US8207520B2 (en) | 2010-04-02 | 2012-06-26 | Hewlett-Packard Development Company, L.P. | Programmable crosspoint device with an integral diode |
| WO2011132597A1 (en) | 2010-04-19 | 2011-10-27 | 独立行政法人物質・材料研究機構 | Inductor composed of capacitor array |
| US9092736B2 (en)* | 2010-07-07 | 2015-07-28 | Qualcomm Incorporated | Communication and synapse training method and hardware for biologically inspired networks |
| US20120011088A1 (en)* | 2010-07-07 | 2012-01-12 | Qualcomm Incorporated | Communication and synapse training method and hardware for biologically inspired networks |
| US8912520B2 (en) | 2010-07-21 | 2014-12-16 | Hewlett-Packard Development Company, L.P. | Nanoscale switching device |
| WO2012011900A1 (en)* | 2010-07-21 | 2012-01-26 | Hewlett-Packard Development Company, L.P. | Nanoscale switching device |
| US9342780B2 (en)* | 2010-07-30 | 2016-05-17 | Hewlett Packard Enterprise Development Lp | Systems and methods for modeling binary synapses |
| US8634224B2 (en) | 2010-08-12 | 2014-01-21 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell |
| US9275728B2 (en) | 2010-08-12 | 2016-03-01 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell |
| US8537599B2 (en) | 2010-08-12 | 2013-09-17 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell |
| US9293200B2 (en) | 2010-08-30 | 2016-03-22 | Hewlett Packard Enterprise Development Lp | Multilayer memory array |
| WO2012030320A1 (en)* | 2010-08-30 | 2012-03-08 | Hewlett-Packard Development Company, L.P. | Multilayer memory array |
| WO2012057771A1 (en)* | 2010-10-28 | 2012-05-03 | Hewlett-Packard Development Company, L.P. | Systems and methods for synthesizing molecules on substrates |
| WO2012102734A1 (en)* | 2011-01-28 | 2012-08-02 | Hewlett-Packard Development Company, L.P. | Methods, systems and apparatus for resistive memory |
| US9455672B2 (en)* | 2012-03-19 | 2016-09-27 | Panasonic Intellectual Property Management Co., Ltd. | IV converter and inertial force sensor using IV converter |
| US20150013459A1 (en)* | 2012-03-19 | 2015-01-15 | Panasonic Corporation | Iv converter and inertial force sensor using iv converter |
| US9805791B2 (en) | 2012-12-18 | 2017-10-31 | The Regents Of The University Of Michigan | Resistive memory structure for single or multi-bit data storage |
| WO2014100024A1 (en)* | 2012-12-18 | 2014-06-26 | The Regents Of The University Of Michigan | Resistive memory structure for single or multi-bit data storage |
| WO2015065415A1 (en)* | 2013-10-31 | 2015-05-07 | Hewlett-Packard Development Company, L.P. | Memristive device switching by alternating polarity pulses |
| US9715926B2 (en) | 2013-10-31 | 2017-07-25 | Hewlett Packard Enterprise Development Lp | Memristive device switching by alternating polarity pulses |
| WO2016018221A1 (en)* | 2014-07-28 | 2016-02-04 | Hewlett-Packard Development Company, L.P. | Adjusting switching parameters of a memristor array |
| US10056142B2 (en) | 2014-10-23 | 2018-08-21 | Hewlett-Packard Development Company, L.P. | Generating a representative logic indicator of grouped memristors |
| WO2016064404A1 (en)* | 2014-10-23 | 2016-04-28 | Hewlett-Packard Development Company, L.P. | Generating a representative logic indicator of grouped memristors |
| US10541026B2 (en) | 2014-10-29 | 2020-01-21 | Hewlett Packard Enterprise Development Lp | Memristive dot product engine for vector processing |
| US10262733B2 (en) | 2014-10-29 | 2019-04-16 | Hewlett Packard Enterprise Development Lp | Memristive dot product engine for vector processing |
| WO2016068920A1 (en)* | 2014-10-29 | 2016-05-06 | Hewlett Packard Enterprise Development Lp | Memristive dot product engine for vector processing |
| CN108604459A (en)* | 2015-12-22 | 2018-09-28 | Arm有限公司 | Circuit and method for configurable impedance array |
| US10332592B2 (en) | 2016-03-11 | 2019-06-25 | Hewlett Packard Enterprise Development Lp | Hardware accelerators for calculating node values of neural networks |
| WO2017155544A1 (en)* | 2016-03-11 | 2017-09-14 | Hewlett Packard Enterprise Development Lp | Hardware accelerators for calculating node values of neural networks |
| US9785615B1 (en)* | 2016-06-24 | 2017-10-10 | Hewlett Packard Enterprise Development Lp | Memristive computation of a vector cross product |
| CN110842915A (en)* | 2019-10-18 | 2020-02-28 | 南京大学 | Robot control system and method based on memristor cross array |
| WO2021072817A1 (en)* | 2019-10-18 | 2021-04-22 | 南京大学 | Memristor cross array-based robot control system and method |
| US20220331952A1 (en)* | 2019-10-18 | 2022-10-20 | Nanjing University | System and method for robot control based on memristive crossbar array |
| US12011833B2 (en)* | 2019-10-18 | 2024-06-18 | Nanjing University | System and method for robot control based on memristive crossbar array |
| CN110837253A (en)* | 2019-10-31 | 2020-02-25 | 华中科技大学 | Intelligent addressing system based on memristor synapse |
| CN112289930A (en)* | 2020-10-29 | 2021-01-29 | 华中科技大学 | Cu with volatility and non-volatilityxO memristor and regulation and control method thereof |
| US20220168036A1 (en)* | 2020-11-30 | 2022-06-02 | Evalve, Inc. | Systems, apparatuses, and methods for removing a medical implant from cardiac tissue |
| Publication number | Publication date |
|---|---|
| US7902867B2 (en) | 2011-03-08 |
| Publication | Publication Date | Title |
|---|---|---|
| US7902867B2 (en) | Memristor crossbar neural interface | |
| He et al. | An artificial somatic reflex arc | |
| US9881196B2 (en) | Integrated finger print sensor | |
| KR100959446B1 (en) | Switch matrix circuit, switch selection detection circuit, and switch state detection method | |
| DE69930774T2 (en) | Touch-sensitive panel for on-screen cursor movement control | |
| Lee et al. | Oxide based nanoscale analog synapse device for neural signal recognition system | |
| JPH11204002A (en) | Solid state capacitive switch | |
| JPH11508806A (en) | Fingerprint detection device and system incorporating the same | |
| US12224745B2 (en) | Capacitance detection circuit and method, and electronic device | |
| US12124627B2 (en) | Glove-based human machine interface | |
| US20190236916A1 (en) | Selective control of an electric field to deliver a touchless haptic effect | |
| US20210158869A1 (en) | Electron device and data processing method using crossbar array | |
| KR101954254B1 (en) | Reconfigurable devices, device array for neuromorphic | |
| US7606399B2 (en) | Surface shape recognizing sensor device | |
| MX2007003409A (en) | Contactless multiposition switches using capacitive touch sensors. | |
| CN117157990B (en) | Artificial Intelligence Pixel Sensor Based on Memristor | |
| US11594279B2 (en) | Array device and writing method thereof | |
| US11885141B2 (en) | Sensory flooring system and a sensory floor comprising a sensory flooring system | |
| KR20200076543A (en) | Neuron, neuromorphic system including the same | |
| US7084442B2 (en) | Double gate transistor arrangement for receiving electrical signals from living cells | |
| US20050101995A1 (en) | Arrangement for receiving electrical signals from living cells and for the selective transmission of electrical stimulation to living cells | |
| US12262650B1 (en) | Temperature sensing and computing device and array based on TaOx electronic memristor | |
| TW202441361A (en) | Sensor and method of operating a sensor | |
| EP4559197A1 (en) | Sensor and method of operating a sensor | |
| CN120660360A (en) | Configurable sensor units and sensor devices |
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|---|---|---|---|
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