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US20090107548A1 - Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same - Google Patents

Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
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Publication number
US20090107548A1
US20090107548A1US12/348,194US34819409AUS2009107548A1US 20090107548 A1US20090107548 A1US 20090107548A1US 34819409 AUS34819409 AUS 34819409AUS 2009107548 A1US2009107548 A1US 2009107548A1
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substrate
titania
stress
light
thin film
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US12/348,194
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John Michael Guerra
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Nanoptek Corp
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Assigned to NANOPTEK CORPORATIONreassignmentNANOPTEK CORPORATIONASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assignors: GUERRA, JOHN M., DR.
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Abstract

Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

Description

Claims (20)

12. A method of generating electricity photovoltaically, the method comprising:
providing a photovoltaic cell comprising: a light-transmissive substrate having a first surface and an opposed second surface provided with nanoscale undulations; a light-transmissive electrically conductive layer provided on the second surface of the substrate; a stress-induced bandgap shifted semiconductor thin film overlying the light-transmissive electrical conductive layer; and an electrode layer overlying the semiconductor thin film;
providing a first conductor in electrical contact with the light-transmissive electrically conductive layer;
providing a second conductor in electrical contact with the electrode layer;
allowing light to impinge upon the first surface of the light-transmissive substrate, thereby creating a potential difference between the first and second conductors.
US12/348,1942002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making sameAbandonedUS20090107548A1 (en)

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US38016902P2002-05-072002-05-07
US10/424,259US7485799B2 (en)2002-05-072003-04-26Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/348,194US20090107548A1 (en)2002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same

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US11/773,379AbandonedUS20090127124A1 (en)2002-05-072007-07-03Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/348,238Expired - LifetimeUS7628928B2 (en)2002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/348,194AbandonedUS20090107548A1 (en)2002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/348,250Expired - Fee RelatedUS7992528B2 (en)2002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/604,359Expired - LifetimeUS7947221B2 (en)2002-05-072009-10-22Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US13/681,334AbandonedUS20140090975A1 (en)2002-05-072012-11-19Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US15/187,690Expired - LifetimeUS9847439B2 (en)2002-05-072016-06-20Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same

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US11/773,379AbandonedUS20090127124A1 (en)2002-05-072007-07-03Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US12/348,238Expired - LifetimeUS7628928B2 (en)2002-05-072009-01-02Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same

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US12/604,359Expired - LifetimeUS7947221B2 (en)2002-05-072009-10-22Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US13/681,334AbandonedUS20140090975A1 (en)2002-05-072012-11-19Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US15/187,690Expired - LifetimeUS9847439B2 (en)2002-05-072016-06-20Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same

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US20140090975A1 (en)2014-04-03
US20090127124A1 (en)2009-05-21
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US20030228727A1 (en)2003-12-11
US20160293786A1 (en)2016-10-06
US20100040514A1 (en)2010-02-18
US7947221B2 (en)2011-05-24
US7485799B2 (en)2009-02-03
US20090110591A1 (en)2009-04-30
US9847439B2 (en)2017-12-19
US20090101420A1 (en)2009-04-23

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